CN114815950B - Current generating circuit, chip and electronic equipment - Google Patents
Current generating circuit, chip and electronic equipment Download PDFInfo
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- CN114815950B CN114815950B CN202210590966.XA CN202210590966A CN114815950B CN 114815950 B CN114815950 B CN 114815950B CN 202210590966 A CN202210590966 A CN 202210590966A CN 114815950 B CN114815950 B CN 114815950B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The application provides a current generation circuit, chip and electronic equipment, this current generation circuit includes: a first current generation circuit for generating a positive temperature coefficient current; the second current generation circuit is connected in parallel with the first current generation circuit and is used for generating a temperature coefficient-free current; the third current generating circuit is connected with the first current generating circuit and the second current generating circuit in parallel to generate negative temperature coefficient current; and a fourth current generating circuit connected to the first, second and third current generating circuits, respectively, and generating a mixed temperature coefficient current based on the positive temperature coefficient current, the non-temperature coefficient current and the negative temperature coefficient current. The current generation circuit provided by the application can generate temperature currents with various temperature coefficients, and is simple and practical in structure.
Description
Technical Field
The application belongs to the technical field of integrated circuits, and particularly relates to a current generation circuit, a chip and electronic equipment.
Background
With the continuous development of electronic technology, various electronic components are increasingly used, and integrated circuits are applied to aspects of life of people. For example, current generation circuits (which convert dc power to ac power having a certain frequency) and chips incorporating the circuits are widely used in many fields such as measurement, automatic control, radio communication, and remote control.
However, the output frequency of the conventional current generating circuit may be affected by temperature, and the output frequency may be changed more than expected, which may cause unstable and inaccurate output frequency of the oscillator.
Disclosure of Invention
The application provides a current generation circuit, a chip and an electronic device, wherein the current generation circuit can generate temperature currents with various temperature coefficients.
An embodiment of a first aspect of the present application proposes a current generation circuit, including:
a first current generation circuit for generating a positive temperature coefficient current;
a second current generation circuit connected in parallel with the first current generation circuit for generating a temperature coefficient-free current;
a third current generation circuit connected in parallel with the first current generation circuit and the second current generation circuit, respectively, for generating a negative temperature coefficient current;
and a fourth current generation circuit connected to the first, second and third current generation circuits, respectively, and generating a mixed temperature coefficient current based on the positive temperature coefficient current, the non-temperature coefficient current and the negative temperature coefficient current.
In some embodiments of the present application, the first current generating circuit includes a first operational amplifier circuit and a first current switch; one end of the first operational amplifier circuit is connected with a power supply voltage, and the other end of the first operational amplifier circuit is grounded and is used for generating current with positive temperature coefficient;
the first current switch is connected with the first operational amplifier circuit and is used for controlling the output of the positive temperature coefficient current.
In some embodiments of the present application, the first operational amplifier includes a first operational amplifier, a first MOS transistor, a first resistor, a first triode, a second MOS transistor, a second resistor, a third resistor, and a second triode;
the source electrode of the first MOS tube and the source electrode of the second MOS tube are both connected with a power supply voltage, the grid electrode of the first MOS tube and the grid electrode of the second MOS tube are connected, the drain electrode of the first MOS tube is connected with the first resistor, and the drain electrode of the second MOS tube is connected with the second resistor;
the collector electrode of the first triode and the collector electrode of the second triode are grounded, the base electrode of the first triode is connected with the base electrode of the second triode, the emitter electrode of the first triode is connected with the first resistor, and the emitter electrode of the second triode is connected with the third resistor;
the second resistor is connected with the third resistor;
the forward input end of the first operational amplifier is connected between the second resistor and the third resistor, the reverse input end of the first operational amplifier is connected with the emitter of the first triode, and the output end of the first operational amplifier is respectively connected with the grid electrode of the first MOS tube and the grid electrode of the second MOS tube.
In some embodiments of the present application, the first current switch includes a plurality of third MOS transistors, a source of each third MOS transistor is connected to a supply voltage, and a drain is used as a current output; and the grid electrode of each third MOS tube is respectively connected with the grid electrode of the first MOS tube and the grid electrode of the second MOS tube.
In some embodiments of the present application, the second current generating circuit includes a second operational amplifier circuit and a second current switch; one end of the second operational amplifier circuit is connected with a power supply voltage, and the other end of the second operational amplifier circuit is grounded and is used for generating current without a temperature coefficient;
the second current switch is connected with the second operational amplifier circuit and is used for controlling the output of the temperature coefficient-free current.
In some embodiments of the present application, the second operational amplifier includes a second operational amplifier, a fourth MOS transistor, a fifth MOS transistor, and a fourth resistor;
the source electrode of the fourth MOS tube is connected with a power supply voltage, the drain electrode and the grid electrode of the fourth MOS tube are both connected with the source electrode of the fifth MOS tube, the drain electrode of the fifth MOS tube is connected with the fourth resistor, and the fourth resistor is grounded;
and the positive input end of the second operational amplifier is connected with the drain electrode of the fifth MOS tube, the reverse input end of the second operational amplifier is connected with the second reference voltage, and the output end of the second operational amplifier is connected with the grid electrode of the fifth MOS tube.
In some embodiments of the present application, the second current switch includes a plurality of sixth MOS transistors, a source of each of the sixth MOS transistors is connected to a supply voltage, and a drain is used as a current output; and the grid electrode of each sixth MOS tube is respectively connected with the grid electrode of the fourth MOS tube.
In some embodiments of the present application, the third current generating circuit includes a third operational amplifier circuit and a third current switch; one end of the third operational amplifier circuit is connected with a power supply voltage, and the other end of the third operational amplifier circuit is grounded and is used for generating a negative temperature coefficient current;
the third current switch is connected with the third operational amplifier circuit and is used for controlling the output of the negative temperature coefficient current.
In some embodiments of the present application, the third operational amplifier includes a third operational amplifier, a seventh MOS transistor, an eighth MOS transistor, and a fifth resistor;
the source electrode of the seventh MOS tube is connected with a power supply voltage, the drain electrode and the grid electrode of the seventh MOS tube are both connected with the source electrode of the eighth MOS tube, the drain electrode of the eighth MOS tube is connected with the fifth resistor, and the fifth resistor is grounded;
and the positive input end of the third operational amplifier is connected with the drain electrode of the eighth MOS tube, the reverse input end of the third operational amplifier is connected with the emitter electrode of the second triode, and the output end of the third operational amplifier is connected with the grid electrode of the eighth MOS tube.
In some embodiments of the present application, the third current switch includes a plurality of ninth MOS transistors, a source of each of the ninth MOS transistors is connected to a supply voltage, and a drain is used as a current output; and the grid electrode of each ninth MOS tube is respectively connected with the grid electrode of the seventh MOS tube.
In some embodiments of the present application, the fourth current generation circuit includes:
the current input module is respectively connected with the first current generation circuit, the second current generation circuit and the third current generation circuit and is used for connecting any two of the positive temperature coefficient current, the non-temperature coefficient current and the negative temperature coefficient current;
the current selection module is connected with the current input module and used for determining the temperature characteristics of the mixed temperature coefficient current under different temperature conditions according to the current accessed by the current input module;
and the current output module is connected with the current selection module and is used for outputting the mixed temperature coefficient current.
In some embodiments of the present application, the current input module includes a positive temperature coefficient module and other temperature coefficient modules connected in parallel, where the positive temperature coefficient module is used to access a positive temperature coefficient current source, and the other temperature coefficient modules are used to access a negative temperature coefficient current source or a temperature coefficient-free current source;
the current selection module comprises a tenth MOS tube, an eleventh MOS tube, a twelfth MOS tube, a thirteenth MOS tube, a fourteenth MOS tube and a fifteenth MOS tube;
the tenth MOS tube is grounded, the source electrode is connected with the other temperature coefficient modules, and the drain electrode is connected with the drain electrode and the gate electrode of the fourteenth MOS tube;
the source electrode of the eleventh MOS tube is connected with the other temperature coefficient modules, the drain electrode of the eleventh MOS tube is connected with the drain electrode and the grid electrode of the fifteenth MOS tube, and the grid electrode of the eleventh MOS tube is connected with the twelfth MOS tube;
the source electrode of the twelfth MOS tube is connected with the positive temperature coefficient module, and the drain electrode of the twelfth MOS tube is connected with the grid electrode of the fourteenth MOS tube;
the source electrode of the thirteenth MOS tube is connected with the positive temperature coefficient module, the drain electrode of the thirteenth MOS tube is connected with the drain electrode and the grid electrode of the fifteenth MOS tube, and the grid electrode of the thirteenth MOS tube is connected with the grid electrode of the tenth MOS tube;
the source electrode of the fourteenth MOS tube is grounded, and the grid electrode of the fourteenth MOS tube is connected with the current output module;
and the source electrode of the fifteenth MOS tube is grounded.
In some embodiments of the present application, the current output module includes a sixteenth MOS transistor, a seventeenth MOS transistor, an eighteenth MOS transistor, a sixth resistor, and a fourth current switch;
the source electrode of the sixteenth MOS tube is grounded, the grid electrode of the sixteenth MOS tube is connected with the grid electrode of the fourteenth MOS tube, and the drain electrode of the sixteenth MOS tube is respectively connected with the grid electrode of the seventeenth MOS tube and the sixth resistor;
the other end of the sixth resistor is connected with the drain electrode of the seventeenth MOS tube;
the source electrode of the seventeenth MOS tube is connected with the drain electrode of the eighteenth MOS tube, and the drain electrode is also respectively connected with the grid electrode of the eighteenth MOS tube and the fourth current switch;
and the source electrode of the eighteenth MOS tube is connected with a power supply voltage, and the grid electrode of the eighteenth MOS tube is also connected with the fourth current switch.
In some embodiments of the present application, the fourth current switch includes a plurality of nineteenth MOS transistors, a source of each nineteenth MOS transistor is connected to a supply voltage, and a drain is used as a current output; and the grid electrode of each nineteenth MOS tube is respectively connected with the grid electrode of the eighteenth MOS tube and the drain electrode of the seventeenth MOS tube.
In some embodiments of the present application, the device further includes a divide-by-two circuit, where the divide-by-two circuit is connected to an output end of the signal generating circuit, and is used for adjusting a duty ratio of the ac signal.
Embodiments of the second aspect of the present application provide a chip on which the current generating circuit of the first aspect is integrated.
Embodiments of a third aspect of the present application provide an electronic device, to which the chip of the second aspect is applied.
The technical scheme provided in the embodiment of the application has at least the following technical effects or advantages:
the current generation circuit provided by the embodiment of the application comprises four sub-current generation circuits which are respectively used for generating positive temperature coefficient current, non-temperature coefficient current, negative temperature coefficient current and mixed temperature coefficient current, and can compensate any temperature coefficient of a current source of an oscillator circuit so as to meet design requirements of various electronic equipment or integrated circuits. And the mixed temperature coefficient current is generated based on the other three sub-current generating circuits, so that the structure of the whole current generating circuit is optimized, and the practicability of the current generating circuit are stronger.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to designate like parts throughout the figures.
In the drawings:
FIG. 1 is a schematic diagram showing a structure of a current generating circuit according to an embodiment of the present application;
FIG. 2 is a schematic diagram showing a part of the structure of a current generating circuit in an embodiment of the present application;
FIG. 3 is an enlarged schematic diagram of a first current generating circuit according to an embodiment of the present application;
fig. 4 is a schematic diagram showing another part of the structure of the current generating circuit in an embodiment of the present application.
Detailed Description
Exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It is noted that unless otherwise indicated, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs.
In the prior art, a current source is an important component of an oscillator circuit, and the current provided by the current source can change along with the change of temperature, so that the output frequency of the oscillator is also affected by the temperature, and a certain temperature characteristic is presented. However, in practical applications, the temperature characteristic of the oscillator may change the output frequency more than expected, which may cause unstable and inaccurate output frequency of the oscillator.
In order to solve the above problems, embodiments of the present application provide a current generating circuit, a chip and an electronic device. The current generating circuit comprises four sub-current generating circuits which are respectively used for generating positive temperature coefficient current, non-temperature coefficient current, negative temperature coefficient current and mixed temperature coefficient current, and can compensate any temperature coefficient of a current source of the oscillator circuit so as to meet the design requirements of various electronic equipment or integrated circuits. And the mixed temperature coefficient current is generated based on the other three sub-current generating circuits, so that the structure of the whole current generating circuit is optimized, and the practicability of the current generating circuit are stronger.
As shown in fig. 1 and 2, a current generating circuit according to an embodiment of the present application includes: a first current generation circuit for generating a positive temperature coefficient current; the second current generation circuit is connected in parallel with the first current generation circuit and is used for generating a temperature coefficient-free current; the third current generating circuit is connected with the first current generating circuit and the second current generating circuit in parallel to generate negative temperature coefficient current; and a fourth current generating circuit connected to the first, second and third current generating circuits, respectively, and generating a mixed temperature coefficient current based on the positive temperature coefficient current, the non-temperature coefficient current and the negative temperature coefficient current.
Wherein, the positive temperature coefficient current, the value of the current will rise with the rise of the temperature; negative temperature coefficient current, the value of the current can be reduced along with the temperature rise; without temperature coefficient current, the value of the current does not rise or fall with temperature change.
According to the embodiment, the plurality of current generating circuits are arranged, so that the current generating circuits can generate currents with various temperature coefficients, and the current source of the signal generating circuit can be compensated with any temperature coefficient, so that the output frequency of any temperature coefficient can be adjusted.
In this embodiment, the specific circuit structures of the first current generating circuit, the second current generating circuit, the third current generating circuit, and the fourth current generating circuit are not particularly limited, as long as the respective corresponding temperature coefficient currents can be generated.
The first current generating circuit includes a first operational amplifier circuit and a first current switch as shown in fig. 2; one end of the first operational amplifier circuit is connected with a power supply voltage, and the other end of the first operational amplifier circuit is grounded and is used for generating positive temperature coefficient current; the first current switch is connected with the first operational amplifier circuit and used for controlling the output of positive temperature coefficient current. The second current generating circuit comprises a second operational amplifier circuit and a second current switch; one end of the second operational amplifier circuit is connected with a power supply voltage, and the other end of the second operational amplifier circuit is grounded and is used for generating current without a temperature coefficient; the second current switch is connected with the second operational amplifier circuit and is used for controlling the output of the temperature coefficient-free current. The third current generation circuit comprises a third operational amplifier circuit and a third current switch; one end of the third operational amplifier circuit is connected with a power supply voltage, and the other end of the third operational amplifier circuit is grounded and is used for generating negative temperature coefficient current; the third current switch is connected with the third operational amplifier circuit and used for controlling the output of the negative temperature coefficient current.
Therefore, three temperature coefficient currents are generated through the three operational amplifier circuits respectively, and through the three current switches, each circuit can be controlled independently, any one or more operational amplifier circuits can be selected according to the needs, and the oscillator circuit can be adjusted flexibly and reliably.
Specifically, the first operational amplifier circuit comprises a first operational amplifier, a first MOS tube, a first resistor, a second MOS tube, a second resistor, a third resistor, a first triode and a second triode; the source electrode of the first MOS tube and the source electrode of the second MOS tube are both connected with a power supply voltage, the grid electrode of the first MOS tube and the grid electrode of the second MOS tube are connected, the drain electrode of the first MOS tube is connected with a first resistor, and the drain electrode of the second MOS tube is connected with a second resistor; the collector of the first triode and the collector of the second triode are grounded, the base of the first triode is connected with the base of the second triode, the emitter of the first triode is connected with the first resistor, and the emitter of the second triode is connected with the third resistor; the second resistor is connected with the third resistor; the forward input end of the first operational amplifier is connected between the second resistor and the third resistor, the reverse input end of the first operational amplifier is connected with the emitter of the first triode, and the output end of the first operational amplifier is respectively connected with the grid electrode of the first MOS tube and the grid electrode of the second MOS tube.
The transistors may be, but not limited to, BJT transistors (Bipolar Junction Transistor, bipolar junction transistors), which not only can function as an integrated switch, thereby facilitating the design of an integrated circuit, but also can amplify the output current.
In this embodiment, the first transistor and the second transistor are respectively referred to as a BJT a and a BJT nA, and as shown in fig. 2 and 3, the voltages at two ends of the two BJT are the same, and the BJT a and the BJT nA are respectively connected to resistors R1 and R3. Assuming that the voltage across R3 is Δv, the expression of the reference voltage Vref (also Vref in fig. 4) output to the second current generating circuit in fig. 3 is as follows (equation 1), and then the following equation (2) can be derived.
Wherein Vbe is the voltage from the base to the emitter of the BJT, which is a negative temperature coefficient voltage; the temperature characteristic of Δv is a positive temperature coefficient, as is the case with the resistor R3. The reference voltage Vref can be outputted as a voltage without a temperature coefficient by designing equation (2) to be equal to 0.
In this embodiment, according to the characteristics of the virtual short and the virtual break of the operational amplifier, the voltages at the two input ends of the operational amplifier are equal, so the temperature characteristic of the current source generated by the current generating circuit is actually consistent with the temperature characteristic of the voltage input at the inverting input end of the operational amplifier. The reference voltage input by the reverse input end of the first operational amplifier is in direct proportion to the voltage at two ends of the resistor R1, and the reference voltage is similar to the resistor R1 and shows positive temperature coefficient, so that the first current generating circuit outputs positive temperature coefficient current.
Further, as shown in fig. 3, the first current switch includes a plurality of third MOS transistors, and a source electrode of each third MOS transistor is connected to a supply voltage, and a drain electrode is used as a current output; and the grid electrode of each third MOS tube is respectively connected with the grid electrode of the first MOS tube and the grid electrode of the second MOS tube. Therefore, a plurality of third MOS tubes are arranged, and the current value of the positive temperature coefficient current output by the first current generating circuit can be adjusted by controlling the conduction quantity of the third MOS tubes.
In other embodiments, the second operational amplifier includes a second operational amplifier, a fourth MOS transistor, a fifth MOS transistor, and a fourth resistor; the source electrode of the fourth MOS tube is connected with the power supply voltage, the drain electrode and the grid electrode of the fourth MOS tube are both connected with the source electrode of the fifth MOS tube, the drain electrode of the fifth MOS tube is connected with the fourth resistor, and the fourth resistor is grounded; the positive input end of the second operational amplifier is connected with the drain electrode of the fifth MOS tube, the reverse input end of the second operational amplifier is connected with the second reference voltage, and the output end of the second operational amplifier is connected with the grid electrode of the fifth MOS tube.
Based on the principle of generating the temperature coefficient current, according to the characteristics of the virtual short and the virtual break of the operational amplifier, the voltages at the two input ends of the operational amplifier are equal, so the temperature characteristic of the current source generated by the current generating circuit is actually consistent with the temperature characteristic of the voltage input at the reverse input end of the operational amplifier. In this embodiment, the reference voltage input at the inverting input terminal of the second operational amplifier is unchanged, and the voltage input at the forward input terminal is also unchanged, so that the second current generating circuit is represented as a temperature coefficient-free current, and the second current generating circuit outputs a temperature coefficient-free current.
Further, the second current switch comprises a plurality of sixth MOS transistors, the source electrode of each sixth MOS transistor is connected with a power supply voltage, and the drain electrode is used as current output; and the grid electrode of each sixth MOS tube is respectively connected with the grid electrode of the fourth MOS tube. Therefore, a plurality of sixth MOS tubes are arranged, and the current value of the temperature coefficient-free current output by the second current generating circuit can be adjusted by controlling the conduction quantity of the sixth MOS tubes.
In other embodiments, the third operational amplifier includes a third operational amplifier, a seventh MOS transistor, an eighth MOS transistor, and a fifth resistor; the source electrode of the seventh MOS tube is connected with the power supply voltage, the drain electrode and the grid electrode of the seventh MOS tube are both connected with the source electrode of the eighth MOS tube, the drain electrode of the eighth MOS tube is connected with the fifth resistor, and the fifth resistor is grounded; the positive input end of the third operational amplifier is connected with the drain electrode of the eighth MOS tube, the reverse input end is connected with the emitter electrode of the second triode, and the output end is connected with the grid electrode of the eighth MOS tube.
Based on the principle of generating the temperature coefficient current, namely according to the characteristics of the virtual short and the virtual break of the operational amplifier, the voltages at the two input ends of the operational amplifier are equal, so that the temperature characteristic of the current source generated by the current generating circuit is actually consistent with the temperature characteristic of the voltage input at the reverse input end of the operational amplifier. In this embodiment, the voltage input at the positive input end of the third operational amplifier is unchanged, and the voltage input at the negative input end is reduced along with the temperature rise, so that the third operational amplifier is represented by a negative temperature coefficient, and the third current generating circuit outputs a negative temperature coefficient current.
Further, the third current switch comprises a plurality of ninth MOS transistors, the source electrode of each of the ninth MOS transistors is connected with a supply voltage, and the drain electrode is used as current output; and the grid electrode of each ninth MOS tube is respectively connected with the grid electrode of the seventh MOS tube. Therefore, a plurality of ninth MOS tubes are arranged, and the current value of the negative temperature coefficient current output by the third current generating circuit can be adjusted by controlling the conduction quantity of the ninth MOS tubes.
In other embodiments, as shown in fig. 4, the fourth current generation circuit includes: the current input module is respectively connected with the first current generation circuit, the second current generation circuit and the third current generation circuit and is used for accessing any two of positive temperature coefficient current, non-temperature coefficient current and negative temperature coefficient current; the current selection module is connected with the current input module and determines the temperature characteristics of the mixed temperature coefficient current under different temperature conditions according to the current accessed by the current input module; the current output module is connected with the current selection module and used for outputting mixed temperature coefficient current.
In this embodiment, the positive temperature coefficient current, the non-temperature coefficient current and the negative temperature coefficient current generated by the first current generating circuit, the second current generating circuit and the third current generating circuit are connected through the current input module, the temperature characteristics of the mixed temperature coefficient current in different time periods are selected through the current selecting module, and any two of the positive temperature coefficient current, the non-temperature coefficient current and the negative temperature coefficient current are utilized to mix into a current source with different current characteristics, for example: ictat and Iptat are mixed, with a negative temperature coefficient at low temperature and a positive temperature coefficient at high temperature. Icon and Iptat are mixed, with no temperature coefficient at low temperature and positive temperature coefficient at high temperature. And finally, outputting the mixed temperature coefficient current through a current output module.
It should be noted that, the specific circuit structures of the current input module, the current selection module and the current output module are not particularly limited in this embodiment, as long as the related functions can be implemented.
Specifically, the current input module may include a positive temperature coefficient module and other temperature coefficient modules connected in parallel, where the positive temperature coefficient module is used to access a positive temperature coefficient current source, and the other temperature coefficient modules are used to access a negative temperature coefficient current source or a non-temperature coefficient current source.
Correspondingly, as shown in fig. 4, the current selection module includes a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor, a thirteenth MOS transistor, a fourteenth MOS transistor, and a fifteenth MOS transistor; a tenth MOS tube, the grid electrode of which is grounded, the source electrode of which is connected with other temperature coefficient modules, and the drain electrode of which is connected with the drain electrode and the grid electrode of the fourteenth MOS tube; an eleventh MOS tube, the source electrode of which is connected with other temperature coefficient modules, the drain electrode of which is connected with the drain electrode and the grid electrode of the fifteenth MOS tube, and the grid electrode of which is connected with the twelfth MOS tube; a twelfth MOS tube, the source electrode of which is connected with the positive temperature coefficient module, and the drain electrode of which is connected with the grid electrode of the fourteenth MOS tube; a thirteenth MOS tube, the source electrode of which is connected with the positive temperature coefficient module, the drain electrode of which is connected with the drain electrode and the grid electrode of the fifteenth MOS tube, and the grid electrode of which is connected with the grid electrode of the tenth MOS tube; the source electrode of the fourteenth MOS tube is grounded, and the grid electrode is connected with the current output module; the source electrode of the fifteenth MOS tube is grounded. Therefore, the temperature characteristics of the mixed temperature coefficient current in different time periods are selected through the tenth MOS tube, the eleventh MOS tube, the twelfth MOS tube, the thirteenth MOS tube, the fourteenth MOS tube and the fifteenth MOS tube.
In this embodiment, when the current input module inputs the negative temperature coefficient current Ictat and the positive temperature coefficient current Iptat respectively, if the temperature is reduced (also can be understood as low temperature), the current on the left side of the reference voltage Vref becomes large, and through the circuit shown in fig. 4, the current flows through the tenth MOS tube, flows into the fourteenth MOS tube, and flows into the sixteenth MOS tube, so that the output current Igen is increased; if the temperature increases (also can be understood as high temperature), the current on the left side of the reference voltage Vref increases, and the output current Igen increases by flowing through the circuit shown in fig. 4, flowing into the fourteenth MOS transistor, and then into the sixteenth MOS transistor. That is, by the selection module, when the negative temperature coefficient current Ictat and the positive temperature coefficient current Iptat are mixed, the negative temperature coefficient is represented at a low temperature, and the positive temperature coefficient is represented at a high temperature.
When the current input module inputs the temperature coefficient-free current Icon and the positive temperature coefficient current Iptat respectively, if the temperature is reduced (the temperature can be understood as low temperature), the current on the right side of the reference voltage Vref is reduced, but the current on the left side is unchanged, so that the current flowing into the fourteenth MOS tube is unchanged, and the whole output current Igen is unchanged (the output current is connected with the grid electrode of the fourteenth MOS tube); if the temperature increases (also can be understood as high temperature), the current on the right side of the reference voltage Vref increases, and the current flows into the fourteenth MOS transistor and then into the sixteenth MOS transistor through the circuit shown in fig. 4, such as the thirteenth MOS transistor, so that the output current Igen increases. That is, by the selection module, when the non-temperature coefficient current Icon and the positive temperature coefficient current Iptat are mixed, the non-temperature coefficient is represented at a low temperature, and the positive temperature coefficient is represented at a high temperature.
It should be noted that, the fourth current generating circuit provided in this embodiment is not limited to generate the two mixed temperature coefficient currents, and any two of the positive temperature coefficient current, the non-temperature coefficient current and the negative temperature coefficient current may be used to mix into one current source with different current characteristics, which falls within the protection scope of the present application.
Specifically, the current output module comprises a sixteenth MOS tube, a seventeenth MOS tube, an eighteenth MOS tube, a sixth resistor and a fourth current switch; a sixteenth MOS tube, the source electrode of which is grounded, the grid electrode of which is connected with the grid electrode of the fourteenth MOS tube, and the drain electrode of which is respectively connected with the grid electrode of the seventeenth MOS tube and the sixth resistor; the other end of the sixth resistor is connected with the drain electrode of the seventeenth MOS tube; a seventeenth MOS tube, wherein the source electrode is connected with the drain electrode of the eighteenth MOS tube, and the drain electrode is also respectively connected with the grid electrode of the eighteenth MOS tube and the fourth current switch; and the source electrode of the eighteenth MOS tube is connected with the power supply voltage, and the grid electrode of the eighteenth MOS tube is also connected with the fourth current switch.
According to the embodiment, the sixteenth MOS tube, the seventeenth MOS tube, the eighteenth MOS tube, the sixth resistor and the fourth current switch are arranged, so that the output of the mixed temperature coefficient current is realized.
Further, the fourth current switch comprises a plurality of nineteenth MOS transistors, the source electrode of each nineteenth MOS transistor is connected with a supply voltage, and the drain electrode is used as current output; and the grid electrode of each nineteenth MOS tube is respectively connected with the grid electrode of the eighteenth MOS tube and the drain electrode of the seventeenth MOS tube. Therefore, by setting a plurality of nineteenth MOS tubes and controlling the conduction quantity of the nineteenth MOS tubes, the current value of the mixed temperature coefficient current output by the fourth current generating circuit can be adjusted.
Among the above-mentioned MOS transistors, the grounded MOS transistor is usually an N-type MOS transistor, and the power supply voltage is usually a P-type MOS transistor. However, the present embodiment is not limited thereto, and for example, the grounding position may be connected to other power sources, and each MOS transistor may be a P-type MOS transistor.
Based on the same concept as described above, the present embodiment also provides a chip on which the current generating circuit of any one of the above embodiments is integrated.
The chip provided in this embodiment is based on the same concept of the current generating circuit, so at least the above beneficial effects can be achieved, and any of the above embodiments can be applied to the chip provided in this embodiment, which is not described herein again.
Based on the same concept as described above, the present embodiment also provides an electronic device, which applies the above chip.
In particular, the electronic device may be, but is not limited to, an oscillator such as that generating a clock signal, or other devices incorporating the oscillator, etc.
The electronic device provided in this embodiment, which applies the above-mentioned chip, is also based on the same concept of the above-mentioned current generating circuit, so at least the above-mentioned beneficial effects can be achieved, and any of the above-mentioned embodiments can be applied to the electronic device provided in this embodiment, and will not be described here again.
It should be noted that the above-mentioned embodiments illustrate rather than limit the application, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. Although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the embodiments, and are intended to be included within the scope of the claims and description. In particular, the technical features mentioned in the various embodiments can be combined in any way as long as there is no structural conflict
In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
The foregoing is merely a preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions easily conceivable by those skilled in the art within the technical scope of the present application should be covered in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (16)
1. A current generation circuit, comprising:
a first current generation circuit for generating a positive temperature coefficient current;
a second current generation circuit connected in parallel with the first current generation circuit for generating a temperature coefficient-free current;
a third current generation circuit connected in parallel with the first current generation circuit and the second current generation circuit, respectively, for generating a negative temperature coefficient current;
a fourth current generation circuit connected to the first, second, and third current generation circuits, respectively, and generating a mixed temperature coefficient current based on the positive temperature coefficient current, the non-temperature coefficient current, and the negative temperature coefficient current;
the fourth current generation circuit comprises a current selection module, wherein the current selection module comprises a tenth MOS tube, an eleventh MOS tube, a twelfth MOS tube, a thirteenth MOS tube, a fourteenth MOS tube and a fifteenth MOS tube;
the tenth MOS tube is grounded, the source electrode is connected with the temperature coefficient-free current or the negative temperature coefficient current, and the drain electrode is connected with the drain electrode and the gate electrode of the fourteenth MOS tube;
the source electrode of the eleventh MOS tube is connected with a negative temperature coefficient current source or a temperature coefficient-free current source, the drain electrode of the eleventh MOS tube is connected with the drain electrode and the grid electrode of the fifteenth MOS tube, and the grid electrode of the eleventh MOS tube is connected with the grid electrode of the twelfth MOS tube;
the source electrode of the twelfth MOS tube is connected with the positive temperature coefficient current, and the drain electrode of the twelfth MOS tube is connected with the grid electrode of the fourteenth MOS tube;
the source electrode of the thirteenth MOS tube is connected with the positive temperature coefficient current, the drain electrode of the thirteenth MOS tube is connected with the drain electrode and the grid electrode of the fifteenth MOS tube, and the grid electrode of the thirteenth MOS tube is connected with the grid electrode of the tenth MOS tube;
the source electrode of the fourteenth MOS tube is grounded, and the grid electrode forms the mixed temperature coefficient current;
and the source electrode of the fifteenth MOS tube is grounded.
2. The circuit of claim 1, wherein the first current generation circuit comprises a first op-amp circuit and a first current switch; one end of the first operational amplifier circuit is connected with a power supply voltage, and the other end of the first operational amplifier circuit is grounded and is used for generating current with positive temperature coefficient;
the first current switch is connected with the first operational amplifier circuit and is used for controlling the output of the positive temperature coefficient current.
3. The circuit of claim 2, wherein the first operational amplifier comprises a first operational amplifier, a first MOS transistor, a first resistor, a first transistor, a second MOS transistor, a second resistor, a third resistor, and a second transistor;
the source electrode of the first MOS tube and the source electrode of the second MOS tube are both connected with a power supply voltage, the grid electrode of the first MOS tube and the grid electrode of the second MOS tube are connected, the drain electrode of the first MOS tube is connected with the first resistor, and the drain electrode of the second MOS tube is connected with the second resistor;
the collector electrode of the first triode and the collector electrode of the second triode are grounded, the base electrode of the first triode is connected with the base electrode of the second triode, the emitter electrode of the first triode is connected with the first resistor, and the emitter electrode of the second triode is connected with the third resistor;
the second resistor is connected with the third resistor;
the forward input end of the first operational amplifier is connected between the second resistor and the third resistor, the reverse input end of the first operational amplifier is connected with the emitter of the first triode, and the output end of the first operational amplifier is respectively connected with the grid electrode of the first MOS tube and the grid electrode of the second MOS tube.
4. The circuit of claim 3, wherein the first current switch comprises a plurality of third MOS transistors, each third MOS transistor having a source connected to a supply voltage and a drain serving as a current output; and the grid electrode of each third MOS tube is respectively connected with the grid electrode of the first MOS tube and the grid electrode of the second MOS tube.
5. The circuit of claim 1, wherein the second current generation circuit comprises a second op-amp circuit and a second current switch; one end of the second operational amplifier circuit is connected with a power supply voltage, and the other end of the second operational amplifier circuit is grounded and is used for generating current without a temperature coefficient;
the second current switch is connected with the second operational amplifier circuit and is used for controlling the output of the temperature coefficient-free current.
6. The circuit of claim 5, wherein the second operational amplifier comprises a second operational amplifier, a fourth MOS transistor, a fifth MOS transistor, and a fourth resistor;
the source electrode of the fourth MOS tube is connected with a power supply voltage, the drain electrode and the grid electrode of the fourth MOS tube are both connected with the source electrode of the fifth MOS tube, the drain electrode of the fifth MOS tube is connected with the fourth resistor, and the fourth resistor is grounded;
and the positive input end of the second operational amplifier is connected with the drain electrode of the fifth MOS tube, the reverse input end of the second operational amplifier is connected with the second reference voltage, and the output end of the second operational amplifier is connected with the grid electrode of the fifth MOS tube.
7. The circuit of claim 6, wherein the second current switch comprises a plurality of sixth MOS transistors, each having a source connected to a supply voltage and a drain serving as a current output; and the grid electrode of each sixth MOS tube is respectively connected with the grid electrode of the fourth MOS tube.
8. The circuit of claim 3, wherein the third current generation circuit comprises a third op-amp circuit and a third current switch; one end of the third operational amplifier circuit is connected with a power supply voltage, and the other end of the third operational amplifier circuit is grounded and is used for generating a negative temperature coefficient current;
the third current switch is connected with the third operational amplifier circuit and is used for controlling the output of the negative temperature coefficient current.
9. The circuit of claim 8, wherein the third operational amplifier circuit comprises a third operational amplifier, a seventh MOS transistor, an eighth MOS transistor, and a fifth resistor;
the source electrode of the seventh MOS tube is connected with a power supply voltage, the drain electrode and the grid electrode of the seventh MOS tube are both connected with the source electrode of the eighth MOS tube, the drain electrode of the eighth MOS tube is connected with the fifth resistor, and the fifth resistor is grounded;
and the positive input end of the third operational amplifier is connected with the drain electrode of the eighth MOS tube, the reverse input end of the third operational amplifier is connected with the emitter electrode of the second triode, and the output end of the third operational amplifier is connected with the grid electrode of the eighth MOS tube.
10. The circuit of claim 9, wherein the third current switch comprises a plurality of ninth MOS transistors, each having a source connected to a supply voltage and a drain serving as a current output; and the grid electrode of each ninth MOS tube is respectively connected with the grid electrode of the seventh MOS tube.
11. The circuit of claim 1, wherein the fourth current generation circuit further comprises a current input module and a current output module;
the current input module is respectively connected with the first current generation circuit, the second current generation circuit and the third current generation circuit and is used for connecting any two of the positive temperature coefficient current, the non-temperature coefficient current and the negative temperature coefficient current;
the current output module is connected with the current input module and is used for outputting the mixed temperature coefficient current.
12. The circuit of claim 11, wherein the current input module comprises a positive temperature coefficient module and another temperature coefficient module in parallel, the positive temperature coefficient module for switching in a positive temperature coefficient current source and the other temperature coefficient module for switching in a negative temperature coefficient current source or a no temperature coefficient current source.
13. The circuit of claim 12, wherein the current output module comprises a sixteenth MOS transistor, a seventeenth MOS transistor, an eighteenth MOS transistor, a sixth resistor, and a fourth current switch;
the source electrode of the sixteenth MOS tube is grounded, the grid electrode of the sixteenth MOS tube is connected with the grid electrode of the fourteenth MOS tube, and the drain electrode of the sixteenth MOS tube is respectively connected with the grid electrode of the seventeenth MOS tube and the sixth resistor;
the other end of the sixth resistor is connected with the drain electrode of the seventeenth MOS tube;
the source electrode of the seventeenth MOS tube is connected with the drain electrode of the eighteenth MOS tube, and the drain electrode is also respectively connected with the grid electrode of the eighteenth MOS tube and the fourth current switch;
and the source electrode of the eighteenth MOS tube is connected with a power supply voltage, and the grid electrode of the eighteenth MOS tube is also connected with the fourth current switch.
14. The circuit of claim 13, wherein the fourth current switch comprises a plurality of nineteenth MOS transistors, each nineteenth MOS transistor having a source connected to a supply voltage and a drain serving as a current output; and the grid electrode of each nineteenth MOS tube is respectively connected with the grid electrode of the eighteenth MOS tube and the drain electrode of the seventeenth MOS tube.
15. A chip having integrated thereon the current generating circuit of any one of claims 1-14.
16. An electronic device, characterized in that the chip of claim 15 is applied.
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