CN213041949U

CN213041949U - Thermal resistance testing device of F-shaped packaged power device

Info

Publication number: CN213041949U
Application number: CN202020379893.6U
Authority: CN
Inventors: 刘楠; 李娟�; 刘相全; 张辉; 曾英廉
Original assignee: SHANGHAI PRECISION METROLOGY AND TEST RESEARCH INSTITUTE
Current assignee: SHANGHAI PRECISION METROLOGY AND TEST RESEARCH INSTITUTE
Priority date: 2020-03-23
Filing date: 2020-03-23
Publication date: 2021-04-23
Anticipated expiration: 2030-03-23

Abstract

The utility model provides a thermal resistance testing device of an F-shaped packaged power device, which is characterized by comprising a heat dissipation substrate, a fixed pressing block and an electrode leading-out component; a plurality of groups of testing stations matched with the sizes of the F-shaped packaged power devices are arranged on the radiating substrate, the electrode leading-out assembly comprises an electrode socket and an electrode leading-out end, and the electrode socket is connected with the electrode leading-out end through a wire; the electrode socket is inserted into each group of test stations, and the electrode leading-out end is connected with an external resistance tester. The utility model provides a thermal resistance testing arrangement of F type encapsulation power device draws forth the contact that compresses tightly of end through the heat dissipation base plate to being surveyed power device heat dissipation, has satisfied the requirement of heat along the one-dimensional direction conduction downwards, can accurately test out F type encapsulation power semiconductor device's crust thermal resistance value, all has great meaning to the reliability and the life of optimizing power device encapsulation design, improving the device.

Description

Thermal resistance testing device of F-shaped packaged power device

Technical Field

The utility model relates to a semiconductor device tests technical field, in particular to thermal resistance testing arrangement of F type encapsulation power device.

Background

The semiconductor power device is one of basic components of electronic products, and has wide application in the power electronic industry. With the development of the technology, the power of the device is improved, and the packaging size is reduced, so that stricter test is provided for the heat dissipation performance of the power device. An important quantitative measure of the heat dissipation capability of a device is the thermal resistance. Thermal resistance is also an important technical index and characteristic of electronic packaging, and is a commonly used evaluation parameter in thermal analysis.

The thermal resistance value has important significance on the aspects of production, use and reliability of the power device. In the production aspect: providing the thermal resistance value of the device in a product manual to guide a user to use; the heat dissipation condition of the device package can be evaluated, and products with the optimal thermal performance structure can be produced by selecting the package type, the bonding material, the package process and the like. In the use aspect: through the thermal resistance value, the working junction temperature can be quickly predicted and the thermal reliability can be designed; the thermal performance of different manufacturers or different packaged devices can be compared through a thermal resistance test; thermal simulation can be carried out by taking the thermal resistance value as an input parameter of the model. In terms of reliability: determining junction temperature of a power device through thermal resistance to set an electric aging working condition; judging failure analysis caused by thermal performance, finding and improving problems in a packaging process and a packaging material; and evaluating the thermal characteristics, predicting the reliability and designing, and prolonging the average service life of the components.

When the thermal resistance test needs to apply power to the tested device, the tube shell achieves good heat dissipation conditions, namely the bottom of the tube shell where the chip is located needs to be in contact with the metal heat dissipation block, and heat is conducted to the temperature-controllable heat dissipation platform through the metal heat dissipation block.

The F-type package is a common package type in the field of power devices and is mainly used for packaging low-frequency high-power triodes, wherein F-2 package is common, and the structure of a tube shell is shown in figure 1. When testing the junction-shell thermal resistance of the F-type packaged power semiconductor device, power needs to be applied to the device through three electrodes of the tube shell, and meanwhile, the requirement that heat is conducted from the chip to the bottom of the tube shell below the chip to the temperature-controllable radiating platform along the one-dimensional direction is met. The conventional test fixture can only meet the electrical connection of pins, and the device shell cannot be contacted on the metal heat dissipation surface during testing. The structural characteristics of the F-type package bring great difficulty to the thermal resistance test, and a test device needs to be designed for the package structure.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a thermal resistance testing arrangement of F type encapsulation power device to solve current F type encapsulation power semiconductor device thermal resistance test problem.

In order to solve the technical problem, the technical scheme of the utility model is that: the thermal resistance testing device for the F-shaped packaged power device is composed of a radiating substrate, a fixed pressing block and an electrode leading-out assembly; a plurality of groups of testing stations matched with the sizes of the F-shaped packaged power devices are arranged on the radiating substrate, the electrode leading-out assembly comprises an electrode socket and an electrode leading-out end, and the electrode socket is connected with the electrode leading-out end through a wire; the electrode socket is inserted into each group of test stations, and the electrode leading-out end is connected with an external resistance tester;

placing the F-shaped packaging power device to be tested into a testing station corresponding to the size of the F-shaped packaging power device and pressing the F-shaped packaging power device through a fixed pressing block; and controlling the thermal resistance tester to apply power to the F-shaped packaging power device to be tested, collecting the bottom temperature of the tube shell of the device to be tested, and displaying and storing the temperature in the thermal resistance tester.

Further, the thermocouple device also comprises a thermocouple component; the bottom of the device tube shell to be tested is connected with the thermal resistance testing device through the thermocouple assembly.

Further, the thermocouple assembly comprises a binding post carrying a thermocouple and a thermocouple plug, and the binding post carrying the thermocouple is connected with the thermocouple plug through a wire; the binding post with the thermocouple penetrates through the thermocouple mounting hole to be connected with the bottom of the pipe shell of the device to be tested, and the thermocouple plug is connected with the thermal resistance testing device.

Further, the heat dissipation substrate is partially hollowed out for routing.

Further, in the crusting thermal resistance test based on the transient double-interface method, the heat dissipation substrate is arranged on a temperature-controllable heat dissipation platform, the device to be tested is arranged on a test station without a thermocouple, and two groups of structure curves are obtained by coating or not coating heat-conducting silicone grease on the bottom of the tube shell of the device to be tested.

Further, when measuring the thermal resistance through the crusting thermal resistance formula, the radiating substrate is arranged on the temperature-controllable radiating platform, the device to be measured is arranged on a testing station with a thermocouple, and the thermocouple acquires the bottom temperature of the tube shell of the device to be measured.

Further, the heat dissipation substrate is made of copper.

Furthermore, the device also comprises a PCB board used for assembling the electrode lead-out assembly and the lead-out wire of the thermocouple assembly.

The utility model provides a thermal resistance testing arrangement of F type encapsulation power device draws forth the contact that compresses tightly of end through the heat dissipation base plate to being surveyed power device heat dissipation, has satisfied the requirement of heat along the one-dimensional direction conduction downwards, can accurately test out the incrustation thermal resistance value of F type encapsulation power semiconductor device, so not only can provide important parameter index for the heat dispersion of aassessment device, moreover to optimizing power device encapsulation design, improve the reliability and the life of device and all have great meaning.

Drawings

The utility model is further explained with the following drawings:

fig. 1 is a schematic structural view of an F-shaped package according to an embodiment of the present invention;

fig. 2 is an exploded schematic view of a testing apparatus according to an embodiment of the present invention;

fig. 3 is a schematic view (three-dimensional diagram) of the overall structure of the thermal resistance testing apparatus provided in the embodiment of the present invention;

fig. 4 is a schematic view of an application example of a thermal resistance testing apparatus provided in an embodiment of the present invention;

in the drawings, reference numerals are used:

a press block 1 for fixing the device;

a pin socket 2 with an insulating layer;

a copper heat dissipation substrate 3;

a thermocouple hole 4;

a pin insertion hole 5;

the device compression screw hole 6;

a fixed press block hole 7;

a PCB board 8;

a pin outlet plug 9;

thermocouple and spring down-pressure binding post 10;

a thermocouple plug 11;

suitable for testing 12 the F-1 packaging tube shell;

the method is suitable for testing the F-2 packaging tube shell 13;

suitable for F-3 package cartridge testing 14.

Detailed Description

The following describes the thermal resistance testing apparatus for F-type packaged power devices in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more fully apparent from the following description and appended claims. It is to be noted that the drawings are in a very simplified form and are not to be construed as precise ratios as are merely intended to facilitate and distinctly illustrate the embodiments of the present invention.

The utility model discloses a core thought lies in, the utility model provides a thermal resistance testing arrangement of F type encapsulation power device draws forth the contact that compresses tightly of end through the heat dissipation base plate to being surveyed power device heat dissipation, has satisfied the requirement of heat along the one-dimensional direction conduction downwards, can accurately test out the crusting thermal resistance value of F type encapsulation power semiconductor device, so not only can provide important parameter index for the heat dispersion of aassessment device, and reliability and the life to optimizing power device encapsulation design, improvement device all have great meaning moreover.

The thermal resistance test is based on two methods. The method comprises the following steps: by the formula of crusting thermal resistance

Calculating to obtain the thermal resistance valueWhere the case temperature Tc is tested by a thermocouple. The method 2 comprises the following steps: according to the junction-crust thermal resistance testing method (JEDEC51-14) based on the transient double-interface method, the bottom of a tube shell is coated with heat-conducting silicone grease and is not coated with the heat-conducting silicone grease respectively to obtain two groups of structural curves, and the separation point of the curves is the junction-crust thermal resistance value.

Referring to fig. 2, the utility model provides a thermal resistance testing arrangement is packaged to F type is suitable for two kinds of test methods. The thermal resistance testing device comprises a copper heat dissipation substrate, testing stations with 3 sizes, a fixed pressing block, an electrode leading-out end and plug, a thermocouple and plug and a PCB.

And the device to be tested is inserted into the corresponding station according to the size, so that the tube shell at the bottom of the device is in contact with the copper heat dissipation substrate. When the test method 1 is used, the device is placed at a position with a thermocouple for testing; using test method 2, the device was placed in a thermocouple-free position for testing. And the pin of the device is inserted into the plug of the test outgoing line to realize electrical connection.

A hollow groove is arranged below the copper radiating substrate, and the pin outgoing line and the outgoing line of the thermocouple are led out from the hollow groove and are connected with a thermal resistance tester through leading-out ends.

Referring to fig. 4, when using the utility model provides a thermal resistance testing arrangement, the station that the size corresponds is put into to the device, compresses tightly the device on testing arrangement through the fixed pressing block. The copper heat dissipation substrate is placed on the temperature-controllable heat dissipation platform. And connecting the thermocouple plug and the outgoing line plug with a thermal resistance tester, controlling the thermal resistance tester to apply power to the tested device, sampling forward voltage data of a temperature sensitive diode in the chip, monitoring the bottom temperature of the device tube shell through a thermocouple, testing, and displaying and storing a test result on the thermal resistance tester.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.

Claims

The thermal resistance testing device of the F-shaped packaging power device is characterized by comprising a heat dissipation substrate, a fixed pressing block and an electrode leading-out assembly; a plurality of groups of testing stations matched with the sizes of the F-shaped packaged power devices are arranged on the radiating substrate, the electrode leading-out assembly comprises an electrode socket and an electrode leading-out end, and the electrode socket is connected with the electrode leading-out end through a wire; the electrode socket is inserted into each group of test stations, and the electrode leading-out end is connected with an external resistance tester;

placing the F-shaped packaging power device to be tested into a testing station corresponding to the size of the F-shaped packaging power device and pressing the F-shaped packaging power device through a fixed pressing block; and controlling the thermal resistance testing device to apply power to the F-shaped packaging power device to be tested, collecting the bottom temperature of the tube shell of the device to be tested, and displaying and storing the temperature in the thermal resistance testing device.
2. The apparatus for testing thermal resistance of a F-pack power device according to claim 1, further comprising a thermocouple assembly; the bottom of the device tube shell to be tested is connected with the thermal resistance testing device through the thermocouple assembly.
3. The thermal resistance testing apparatus of a F-type packaged power device according to claim 2, wherein the thermocouple assembly includes a thermocouple-carrying terminal and a thermocouple plug, the thermocouple-carrying terminal being connected to the thermocouple plug by a wire; the binding post with the thermocouple penetrates through the thermocouple mounting hole to be connected with the bottom of the pipe shell of the device to be tested, and the thermocouple plug is connected with the thermal resistance testing device.
4. The thermal resistance testing device of F-type packaged power devices as claimed in any one of claims 1 to 3, wherein the heat dissipation substrate is partially hollowed out for routing.
5. The apparatus of claim 1, wherein in the junction-case thermal resistance test based on the transient double-interface method, the heat-dissipation substrate is placed on a temperature-controllable heat-dissipation platform, the device under test is placed in a test station without thermocouple, and two sets of structure curves are obtained by coating or not coating the thermal-conductive silicone grease on the bottom of the device under test tube.
6. The apparatus for testing thermal resistance of an F-type packaged power device according to claim 3, wherein when the thermal resistance is measured by the crusting thermal resistance formula, the heat dissipation substrate is placed on the temperature-controllable heat dissipation platform, the device under test is placed at a test station having a thermocouple, and the thermocouple collects the temperature of the bottom of the case of the device under test.
7. The apparatus for testing thermal resistance of an F-type packaged power device according to claim 1, wherein the heat-dissipating substrate is made of copper.
8. The apparatus for testing thermal resistance of a F-type packaged power device according to claim 3, further comprising a PCB board for assembling the lead-out wires of the electrode lead-out assembly and the thermocouple assembly.
9. The apparatus for testing thermal resistance of F-type packaged power devices according to claim 1, wherein said testing stations have 3 sizes corresponding to F-1, F-2 and F-3 type packaged power devices, respectively.