CN104730295A - Clamp for thermal resistance test of SMD packaged semiconductor device - Google Patents
Clamp for thermal resistance test of SMD packaged semiconductor device Download PDFInfo
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- CN104730295A CN104730295A CN201510154242.0A CN201510154242A CN104730295A CN 104730295 A CN104730295 A CN 104730295A CN 201510154242 A CN201510154242 A CN 201510154242A CN 104730295 A CN104730295 A CN 104730295A
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Abstract
The invention discloses a clamp for a thermal resistance test of a SMD packaged semiconductor device and relates to the technical field of semiconductor testing. The clamp comprises a metal base, a PCB, an insulated locating block and a compressing block. A groove is formed in the metal base. The PCB circuit is arranged in the groove. The insulated locating block is arranged on the PCB. The insulated locking block is provided with a locating containing hole matched with the tested SMD device. The compressing block capable of downwards compressing a tested SMD device is arranged on the insulated locating block. A thermocouple probe containing hole corresponding to the electrode of the tested SMD device in position is formed in the bottom of the groove. Two electrode wiring holes are formed in the side faces of the groove. Two electrodes enabling pins of the tested SMD device to be connected with electrode wiring holes are arranged on the PCB. The clamp can guarantee that the good thermal conductivity between the tested SMD device and a constant-temperature platform is achieved, the temperature of a shell can be easily controlled within a required range, it is also guaranteed that the electrodes of the tested SMD device are insulated from one another, and normal operation of the test is guaranteed.
Description
Technical field
The present invention relates to semiconductor test technical field.
Background technology
The thermal characteristics of semiconductor devices is one of important content in reliability design.For guaranteeing reliability when device uses, the structural design of device will consider the heat dissipation characteristics of device, and the quantitative calculating of these designs, all need the thermal resistance parameters according to device.Therefore the thermal resistance of semiconductor devices is an important parameter of reflection device thermal characteristics.
The resistance that heat runs on thermally conductive pathways is thermal resistance.It is defined as the ratio of temperature difference on thermally conductive pathways and consumed power.The thermal resistance that shell tied by device is the thermal resistance that the thermal source of chip ties between package casing, that is:.Junction temperature T when can obtain devices function by thermal resistance tester
j, the method for testing specified according to testing standard, when carrying out knot to shell thermo-resistance measurement, controls at a certain fixed temperature by the package casing temperature (i.e. shell temperature) of device by temperature control platform, so can obtain the knot of device to shell thermal resistance.
For SMD(Surface Mount Devices, surface mount device) semiconductor devices that encapsulates, its three electrodes are all positioned at device bottom surface, and at grade, because the part that skin temperature during its work is higher is the bottom surface of extraction electrode, when controlling skin temperature, electrode surface is needed to be adjacent to temperature control platform and thermocouple probe, but temperature control platform is metal material, if directly device is attached on temperature control platform, cannot will inevitably test due to electric pole short circuit.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture, ensure, between tested SMD device and thermostatic platform, there is good thermal conductivity, be conducive to controlling skin temperature in claimed range, ensure to insulate between tested each electrode of SMD device simultaneously, ensure normally carrying out of measurement; And location is accurately simple, easy for installation, realize the Quick Measurement of SMD encapsulated semiconductor device thermal resistance, be applicable to the thermo-resistance measurement of the SMD encapsulated semiconductor device of each size model.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture, comprise metab, PCB, insulation locating piece and compact heap, described metab is provided with groove, PCB is placed in groove, insulation locating piece is provided with above PCB, insulation locating piece body is provided with the location putting hole suitable with tested SMD device, is provided with the compact heap that can compress tested SMD device downwards above insulation locating piece; Bottom portion of groove is provided with the thermocouple probe putting hole corresponding with the electrode position of tested SMD device; Described groove side is provided with two electrode connection holes, and described PCB is provided with two electrodes be connected with electrode connection hole by tested SMD device pin.
Further technical scheme, described compact heap is T-shaped, and bottom is provided with projection, and tested SMD device compresses downwards by described projection, and compact heap two ends are fixed by screws in the groove of groove along upper.
Further technical scheme, described insulation positioning block structure and groove suitable, insulation locating piece at least one group of opposite side is provided with hand-held interior concane gap.
Further technical scheme, described PCB is plating nickel gold circuit board, and the thickness of PCB is 0.5mm.Adopt plating nickel gold circuit board thermal conductive fast, be beneficial to the delivered heat between tested SMD device and thermostatic platform.
Further technical scheme, described insulation locating piece and compact heap are teflon material.Be different from the insulating material of rigidity, compact heap adopts teflon material, consider that the coefficient of heat conductivity of teflon is close with the coefficient of heat conductivity of air, adopt this material, the actual working state of measured device can be imitated as far as possible, avoid introducing new heat dissipation path to the measured device under duty, and teflon has certain elasticity, after compact heap both sides are fixing, certain power can be applied for the tested SMD device under projection.
Further technical scheme, scribbles conductive silver paste or is covered with conductive paper between described PCB and groove.
Further technical scheme, described metab both sides are provided with base fixed orifice, for base is fixed on thermostatic platform.
Further technical scheme, the surrounding them of described PCB and be provided with some louvres with tested SMD device correspondence position, the diameter of described louvre is 0.5mm.
Further technical scheme, described metab is copper material, and thermal conductivity is good and with low cost; Described bottom portion of groove thickness is 1mm, ensures to realize heat trnasfer faster between tested SMD device and thermostatic platform.
Further technical scheme, is provided with insulator in described electrode connection hole, because base is copper material, when installing insulating makes wire pass recess sidewall and metab insulate, ensure the reliability and security of test; Described electrode both sides are provided with the insulated channel of non-plating nickel gold, and insulated channel is arranged along electrode, with insulator acting in conjunction, avoid two electric pole short circuits.
The beneficial effect adopting technique scheme to produce is: the present invention ensures to have good thermal conductivity between tested SMD device and thermostatic platform, be conducive to controlling skin temperature in claimed range, ensure to insulate between tested each electrode of SMD device simultaneously, ensure normally carrying out of measurement; And location is accurately simple, easy for installation, realize the Quick Measurement of SMD encapsulated semiconductor device thermal resistance, be applicable to the thermo-resistance measurement of the SMD encapsulated semiconductor device of each size model; The PCB be provided with is that tested SMD device applies power by electrode, stop the electrical connection of tested SMD device and metab simultaneously, the heat of tested SMD device can be distributed to metab again by the louvre be provided with, thus the heat trnasfer between guarantee and thermostatic platform; Metab is copper material, with low cost, good heat conduction effect; The compact heap be provided with can apply pressure to tested SMD device, thus ensures to have good electrical contact and heat trnasfer between tested SMD device and PCB, ensures that test job can be carried out smoothly; The insulation locating piece be provided with can realize quick position, increases work efficiency.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of PCB in Fig. 1;
In the accompanying drawings: 1, metab, 2, PCB, 3, insulation locating piece, 4, tested SMD device, 5, compact heap, 6, screw, 7, base fixed orifice, 8, electrode connection hole, 9, screw, 10, thermocouple probe putting hole, 11, louvre, 12, insulated channel, 13, electrode, 14, groove, 15, location putting hole.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
As shown in Figure 1, a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture, comprises metab 1, PCB 2, insulation locating piece 3 and compact heap 5.Metab 1 is copper material, and metab 1 is provided with groove 14, and groove 14 bottom thickness is 1mm.PCB 2 is placed in groove 14, scribble conductive silver paste between PCB 2 and groove 14 or be covered with conductive paper, PCB 2 is plating nickel gold circuit board, the thickness of PCB 2 is 0.5mm, plating nickel gold circuit board has good thermal conductivity, is conducive to the delivered heat between tested SMD device 4 and thermostatic platform.PCB 2 is provided with above insulation locating piece 3, and insulation locating piece 3 structure is suitable with groove 14, and the edge of insulation locating piece 3 is equipped with the hand-held interior concane gap of arc, conveniently during test takes out from metab 1 and inserts.Insulation locating piece 3 body is provided with the location putting hole 15 suitable with tested SMD device 4.Insulation locating piece 3 is provided with the compact heap 5 that can compress tested SMD device 4 downwards above.Compact heap 5 is T-shaped, and bottom is provided with projection, and tested SMD device 4 compresses downwards by projection, and the both sides of compact heap 5 and groove 14 are provided with the screw 9 suitable with screw 6, and compact heap 5 two ends are fixed on the groove of groove 14 along upper by screw 6.Insulation locating piece 3 and compact heap 5 are teflon material, compact heap 5 adopts teflon material, consider that the coefficient of heat conductivity of teflon is close with the coefficient of heat conductivity of air, adopt this material, the actual working state of measured device can be imitated as far as possible, avoid introducing new heat dissipation path to the measured device under duty, and teflon has certain elasticity, after compact heap 5 both sides are fixing, certain power can be applied for the tested SMD device 4 under projection.The thermocouple probe putting hole 10 corresponding with electrode 13 position of tested SMD device 4 is provided with bottom groove 14.Groove 14 side is provided with two electrode connection holes 8, is provided with insulator in electrode connection hole 8.
As shown in Figure 2, PCB 2 is provided with two electrodes 13 be connected with electrode connection hole 8 by tested SMD device 4 pin, and electrode 13 both sides are provided with the insulated channel 12 of non-plating nickel gold.Metab 1 both sides are provided with base fixed orifice 7, are fixed on thermostatic platform by metab 1 by base fixed orifice 7.Be provided with some louvres 11 around the electrode 13 of PCB 2 and with tested SMD device 4 correspondence position, the diameter of louvre 11 is 0.5mm, and between louvre 11, arrangement is tight and even, is also distributed in the position, edge of PCB 2.The position of louvre 11 and quantity can be arranged according to actual conditions, to ensure that PCB 2 has good heat dispersion.
Using method of the present invention is: before use, first PCB 2 is touched by conductive silver paste or conductive paper and groove 14 bottom connection and is compressed; Again two wires are connected two electrodes 13 through the insulator be installed in electrode connection hole 8; Between the lower surface of metab 1 and thermostatic platform, heat-conducting silicone grease is coated with during test, thermocouple probe is stretched into thermocouple probe putting hole 10, metab 1 is placed on thermostatic platform, then put into insulation locating piece 3 and tested SMD device 4, between tested SMD device 4 and PCB 2, be coated with the materials such as heat-conducting silicone grease; Tested SMD device 4 is pushed down again with compact heap 5, and connect compact heap 5 and metab 1 with screw 6, metab 1 is firmly secured on thermostatic platform, on the metab 1 electric for external world condition being applied to the wire stretched out in electrode connection hole 8 and be conducted with the extreme electrode of tested SMD device 4, for tested SMD device 4 applies electrical testing condition, can test.
Principle of the present invention is: the heating electrode of tested SMD device 4 is close to PCB 2, is coated with the materials such as heat-conducting silicone grease between during use, to improve heat-conducting effect; Between PCB 2 and base, coated with conductive silver is starched or spreads one deck conductive paper, and conductive silver paste or conductive paper have electric conductivity, also can have good thermal conductivity; During test, tested SMD device 4 generates heat the heat of electrode by louvre 11 compact arranged in plating nickel gold PCB 2, conductive silver paste or conductive paper, metab 1 to thermostatic platform, and then controls the temperature of electrode surface shell of tested SMD device 4; Execute power-up condition to two electrodes 13 and metab 1, two electrodes 13 of the tested SMD device 4 contacted with electrode 13 and being energized with the extreme electrode of metab 1 conducting, start working; Thermocouple probe is positioned at immediately below tested SMD device 4 extreme electrode, detects the temperature of the heat through PCB 2 louvre 11, realizes the object measuring tested SMD device 4 electrode surface skin temperature.
Claims (10)
1. a SMD encapsulated semiconductor device thermo-resistance measurement fixture, it is characterized in that comprising metab (1), PCB (2), insulation locating piece (3) and compact heap (5), described metab (1) is provided with groove (14), PCB (2) is placed in groove (14), PCB (2) is provided with insulation locating piece (3) above, insulation locating piece (3) body is provided with the location putting hole (15) suitable with tested SMD device (4), insulation locating piece (3) is provided with the compact heap (5) that can compress tested SMD device (4) downwards above, groove (14) bottom is provided with the thermocouple probe putting hole (10) corresponding with electrode (13) position of tested SMD device (4), described groove (14) side is provided with two electrode connection holes (8), and described PCB (2) is provided with two electrodes (13) be connected with electrode connection hole (8) by tested SMD device (4) pin.
2. a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture according to claim 1, it is characterized in that described compact heap (5) is T-shaped, bottom is provided with projection, tested SMD device (4) compresses downwards by described projection, and compact heap (5) two ends are fixed on the groove of groove (14) along upper by screw (6).
3. a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture according to claim 1, it is characterized in that described insulation locating piece (3) structure and groove (14) suitable, insulation locating piece (3) at least one group of opposite side be provided with hand-held interior concane gap.
4. a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture according to claim 1, it is characterized in that described PCB (2) is for plating nickel gold circuit board, the thickness of PCB (2) is 0.5mm.
5. a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture according to claim 1, is characterized in that described insulation locating piece (3) and compact heap (5) are teflon material.
6. a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture according to claim 1, is characterized in that scribbling conductive silver paste between described PCB (2) and groove (14) or being covered with conductive paper.
7. a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture according to claim 1, is characterized in that described metab (1) both sides are provided with base fixed orifice (7).
8. a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture according to claim 1, it is characterized in that electrode (13) surrounding of described PCB (2) and be provided with some louvres (11) with tested SMD device (4) correspondence position, the diameter of described louvre (11) is 0.5mm.
9. a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture according to claim 1, it is characterized in that described metab (1) is copper material, described groove (14) bottom thickness is 1mm.
10. a kind of SMD encapsulated semiconductor device thermo-resistance measurement fixture according to claim 1, it is characterized in that being provided with insulator in described electrode connection hole (8), described electrode (13) both sides are provided with the insulated channel (12) of non-plating nickel gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510154242.0A CN104730295A (en) | 2015-04-02 | 2015-04-02 | Clamp for thermal resistance test of SMD packaged semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510154242.0A CN104730295A (en) | 2015-04-02 | 2015-04-02 | Clamp for thermal resistance test of SMD packaged semiconductor device |
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| CN104730295A true CN104730295A (en) | 2015-06-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510154242.0A Pending CN104730295A (en) | 2015-04-02 | 2015-04-02 | Clamp for thermal resistance test of SMD packaged semiconductor device |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106291309A (en) * | 2016-09-22 | 2017-01-04 | 全球能源互联网研究院 | A kind of power semiconductor chip test cell and method of testing thereof |
| CN108593978A (en) * | 2018-06-21 | 2018-09-28 | 张志添 | A kind of connector test fixture |
| CN109541340A (en) * | 2018-10-29 | 2019-03-29 | 山东同方鲁颖电子有限公司 | A kind of chip electronic component test device |
| CN109884425A (en) * | 2019-01-31 | 2019-06-14 | 王懿琳 | A kind of test device for power tube pin class package module |
| CN110231498A (en) * | 2019-07-17 | 2019-09-13 | 安徽三优光电科技有限公司 | A kind of SMD encapsulation semiconductor devices thermo-resistance measurement fixture |
| CN110911300A (en) * | 2019-12-05 | 2020-03-24 | 白辉 | Semiconductor packaging structure detection system based on Internet of things |
| US20200166412A1 (en) * | 2018-11-28 | 2020-05-28 | General Electric Company | Systems and methods for thermal monitoring |
| CN111273060A (en) * | 2018-12-05 | 2020-06-12 | 南亚科技股份有限公司 | Clamp holder |
| CN111337810A (en) * | 2020-03-23 | 2020-06-26 | 上海精密计量测试研究所 | Thermal resistance testing device for SMD-3 packaged power device |
| CN111521922A (en) * | 2020-04-03 | 2020-08-11 | 中国电子科技集团公司第十三研究所 | Power cycle test device and system for semiconductor device |
| CN111867324A (en) * | 2020-06-30 | 2020-10-30 | 北京卫星制造厂有限公司 | Heat radiation structure suitable for spacecraft high-power device |
| CN114236278A (en) * | 2021-12-13 | 2022-03-25 | 北京中微普业科技有限公司 | SMD component impedance analysis three-temperature coaxial structure test tool |
| CN115106671A (en) * | 2022-08-22 | 2022-09-27 | 度亘激光技术（苏州）有限公司 | Packaging method and packaging clamp |
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| CN106291309A (en) * | 2016-09-22 | 2017-01-04 | 全球能源互联网研究院 | A kind of power semiconductor chip test cell and method of testing thereof |
| CN108593978A (en) * | 2018-06-21 | 2018-09-28 | 张志添 | A kind of connector test fixture |
| CN109541340A (en) * | 2018-10-29 | 2019-03-29 | 山东同方鲁颖电子有限公司 | A kind of chip electronic component test device |
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| US20200166412A1 (en) * | 2018-11-28 | 2020-05-28 | General Electric Company | Systems and methods for thermal monitoring |
| CN111273060B (en) * | 2018-12-05 | 2022-04-19 | 南亚科技股份有限公司 | Clamp holder |
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| CN109884425A (en) * | 2019-01-31 | 2019-06-14 | 王懿琳 | A kind of test device for power tube pin class package module |
| CN110231498A (en) * | 2019-07-17 | 2019-09-13 | 安徽三优光电科技有限公司 | A kind of SMD encapsulation semiconductor devices thermo-resistance measurement fixture |
| CN110911300A (en) * | 2019-12-05 | 2020-03-24 | 白辉 | Semiconductor packaging structure detection system based on Internet of things |
| CN111337810A (en) * | 2020-03-23 | 2020-06-26 | 上海精密计量测试研究所 | Thermal resistance testing device for SMD-3 packaged power device |
| CN111521922A (en) * | 2020-04-03 | 2020-08-11 | 中国电子科技集团公司第十三研究所 | Power cycle test device and system for semiconductor device |
| CN111867324A (en) * | 2020-06-30 | 2020-10-30 | 北京卫星制造厂有限公司 | Heat radiation structure suitable for spacecraft high-power device |
| CN111867324B (en) * | 2020-06-30 | 2023-04-14 | 北京卫星制造厂有限公司 | Heat radiation structure suitable for spacecraft high-power device |
| CN114236278A (en) * | 2021-12-13 | 2022-03-25 | 北京中微普业科技有限公司 | SMD component impedance analysis three-temperature coaxial structure test tool |
| CN115106671A (en) * | 2022-08-22 | 2022-09-27 | 度亘激光技术（苏州）有限公司 | Packaging method and packaging clamp |
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Application publication date: 20150624 |