CN211728760U - Wafer polishing device - Google Patents
Wafer polishing device Download PDFInfo
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- CN211728760U CN211728760U CN201922497434.8U CN201922497434U CN211728760U CN 211728760 U CN211728760 U CN 211728760U CN 201922497434 U CN201922497434 U CN 201922497434U CN 211728760 U CN211728760 U CN 211728760U
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- wafer
- polishing
- polishing pad
- clamping
- pad
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The application discloses a wafer polishing device, which comprises a supporting device and a clamping device; the supporting device comprises a supporting base and a polishing pad arranged on the supporting base; the clamping device comprises a balancing weight, a clamping base and a cushion pad, wherein the balancing weight is arranged on one surface of the clamping base, and the cushion pad is arranged on one surface of the clamping base, which is far away from the balancing weight; the clamping device is used for contacting the wafer with the polishing pad, the balancing weight is used for adjusting the clamping force of the clamping device, and the buffer pad is adhered to the non-polishing surface of the wafer. Through the mode, this application can reduce the injury to the wafer through the dynamics of balancing weight control polishing, promotes the quality of product.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a wafer polishing device.
Background
The wafer is used as a substrate material of a semiconductor device and is widely used for a laser and a light emitting chip of a light emitting diode, wherein in the preparation of the semiconductor laser, the wafer needs to be thinned to a certain degree to meet the processing requirement, but because the surface of the thinned wafer is uneven and has larger surface stress, the thinned wafer is easy to generate the condition of wafer bending in the subsequent process, the thinned wafer also needs to be polished.
SUMMERY OF THE UTILITY MODEL
The main problem of solving of this application provides a wafer burnishing device, can reduce the injury to the wafer through the dynamics of balancing weight control polishing, promotes the quality of product.
In order to solve the technical problem, the technical scheme adopted by the application is as follows:
providing a wafer polishing device, wherein the wafer polishing device comprises a supporting device and a clamping device;
the supporting device comprises a supporting base and a polishing pad arranged on the supporting base;
the clamping device comprises a balancing weight, a clamping base and a cushion pad, wherein the balancing weight is arranged on one surface of the clamping base, and the cushion pad is arranged on one surface of the clamping base, which is far away from the balancing weight;
the clamping device is used for contacting the wafer with the polishing pad, the balancing weight is used for adjusting the clamping force of the clamping device, and the buffer pad is adhered to the non-polishing surface of the wafer.
In one embodiment, the buffer pad comprises a high temperature adhesive tape or a photoresist, and the high temperature adhesive tape is a polyimide film.
In one embodiment, the polishing pad has at least one groove or hole uniformly or non-uniformly distributed thereon, and the shape of the groove or hole includes a triangle, a rectangle or a circle.
In one embodiment, a plurality of concentric annular grooves are disposed on the polishing pad, wherein the radial distances between the annular grooves are equal or different.
In one embodiment, the wafer polishing apparatus further includes a water spraying device disposed above the polishing pad, and the water spraying device is configured to spray water to the polishing pad after the polishing process is completed.
In one embodiment, the polishing pad is a piezoelectric polishing pad, and the wafer polishing apparatus further includes a voltage detection device connected to the piezoelectric polishing pad, wherein the voltage detection device is configured to detect an extrusion force corresponding to a surface of the piezoelectric polishing pad, and adjust weights of the weight blocks corresponding to different regions of the polishing pad according to a local difference of the extrusion force.
In one embodiment, the wafer polishing apparatus further comprises a thickness detection device located above the polishing pad, the thickness detection device being configured to dynamically detect the thickness of the polishing pad.
In one embodiment, the thickness detection device is located approximately equal to the center of the polishing pad as measured from the center of the clamping device.
In one embodiment, the wafer polishing apparatus further comprises a controller connected to the thickness detection device, wherein the controller is further connected to the clamping device, the controller transmits the thickness of the polishing pad to the clamping device according to the thickness reduction, and the clamping device drives the clamping base to move downwards by the same distance according to the thickness.
In one embodiment, the thickness detection device is a laser sensor, and the laser sensor can emit laser to the surface of the wafer and receive the laser reflected by the surface of the wafer to obtain the distance from the thickness detection device to the surface of the wafer.
Through the scheme, the beneficial effects of the application are that: the polishing device comprises a supporting device and a clamping device, wherein the clamping device can tightly contact a wafer with a polishing pad so that the polishing pad can polish the wafer, and the polishing force can be controlled through a balancing weight when the wafer is polished, so that the wafer is prevented from being worn out or excessively worn due to overlarge abrasion force, the damage to the wafer is reduced, and the quality of the wafer is improved; when the wax-removing process is executed, the wafer is not in direct contact with the clamping base due to the fact that the buffering cushion is arranged on the clamping base, and the wafer is prevented from being scratched to a non-polished surface due to relative movement of the wafer and the clamping base when the wafer is separated from the clamping base.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
FIG. 1 is a schematic structural diagram of an embodiment of a wafer polishing apparatus provided herein;
FIG. 2 is a schematic view of the polishing pad of the embodiment shown in FIG. 1;
FIG. 3 is another schematic view of the polishing pad of the embodiment shown in FIG. 1;
FIG. 4 is a schematic structural diagram of another embodiment of a wafer polishing apparatus provided herein;
FIG. 5 is a schematic structural diagram of a wafer polishing apparatus according to another embodiment of the present application;
FIG. 6 is a schematic structural diagram of a wafer polishing apparatus according to still another embodiment of the present application;
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The application provides a wafer polishing device, which comprises a supporting device and a clamping device;
the supporting device comprises a supporting base and a polishing pad arranged on the supporting base;
the clamping device comprises a balancing weight, a clamping base and a cushion pad, wherein the balancing weight is arranged on one surface of the clamping base, and the cushion pad is arranged on one surface of the clamping base, which is far away from the balancing weight;
the clamping device is used for contacting the wafer with the polishing pad, the balancing weight is used for adjusting the clamping force of the clamping device, and the buffer pad is adhered to the non-polishing surface of the wafer.
The wafer polishing apparatus of the present application will be described with reference to specific embodiments.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a wafer polishing apparatus 10 provided in the present application, including: a support device 11 and a clamping device 12.
The supporting device 11 includes a supporting base 111 and a polishing pad 112 disposed on the supporting base 111, the holding device 12 includes a holding base 121 and a weight 122 disposed on the holding base 121, and the holding device 12 is used for clamping a wafer on the polishing pad 112 during a polishing process.
The clamping device 12 further comprises a buffer pad 123 arranged on one side of the clamping base 121 opposite to the balancing weight, the buffer pad 123 is arranged on one side of the clamping base 121 far away from the balancing weight 122, and the buffer pad 123 is used for directly contacting with a wafer, so that clamping is realized in the polishing process, a certain clamping force is generated, and the polishing process is convenient to complete.
In addition, the buffer pad 123 can also be used for protecting the non-polished surface of the wafer during wax removal, so that the surface quality of the non-polished surface of the wafer is improved, and surface scratches are reduced.
To describe a specific polishing process flow, the buffer pad 123 is attached to the clamping base 121, the clamping base 121 is placed on a hot plate to be heated, after the temperature of the clamping base 121 reaches a preset temperature, wax is coated on the upper surface of the buffer pad 123, after the wax is melted, a wafer can be placed in melted wax liquid, and then cooling is performed, so that the wax is solidified to adhere the wafer to the buffer pad 123 of the clamping device 12.
In the wafer polishing process, as shown in fig. 1 of the wafer polishing apparatus 10, a polishing pad 112 is disposed on a supporting base 111, the polishing pad 112 can polish a wafer, a polishing liquid can be dropped on the polishing pad 112 during polishing, then a polishing pressure is applied to a clamping base 121 through a counterweight 122, and a rotating platform drives the polishing pad 112 to rotate, so as to polish a polished surface of the wafer.
In a specific polishing process, because the wafer is in close contact with the polishing pad 112, the polishing pad 112 can rub the surface of the wafer, and can control the clamping force of the clamping device 12 through the counterweight 122, when a large amount of polishing needs to be performed quickly, the clamping device 12 can generate a large clamping force by increasing the weight of the counterweight 122, and in the process of rotating and polishing the wafer, the large clamping force can increase the friction between the wafer and the polishing pad 112, so that the polishing speed is accelerated; however, in a process requiring a small amount of polishing, by reducing the weight of the weight 122, the wafer can be prevented from being worn out or excessively worn due to an excessive wear force, and damage to the wafer is reduced, thereby improving the quality of the wafer.
After the wafer is polished, a wax dropping process can be executed, the clamping device 12 can be turned over to enable the polished surface of the wafer to face upwards, the wafer and the clamping device 12 are placed on a hot plate together for heating, meanwhile, wax dropping liquid can be added to enable the wax to be melted rapidly, the wafer and the buffer pad 123 are separated by utilizing the principle of local boiling, after the wax is completely melted, the wafer is pushed down from the clamping device by utilizing tweezers to exert acting force, and the separation of the wafer and the buffer pad 123 is achieved.
When the wax removing process is executed, the wafer is not directly contacted with the clamping base 121 due to the buffer pad 123 arranged on the clamping base 121, so that the wafer is prevented from being scratched on a non-polished surface of the wafer due to relative movement of the wafer and the clamping base 121 when the wafer is separated from the clamping base 121, the surface quality of the wafer is improved, and the quality of the wafer is improved.
In one embodiment, the buffer pad 123 is a high temperature tape, the non-polished surface of the wafer is the front surface of the wafer, and a layer of high temperature tape is first attached to the clamping base 121, and the high temperature tape has a thin thickness and a high viscosity; then placing the wafer on a hot plate, heating the wafer to 100 ℃, coating wax on the surface of the high-temperature adhesive tape, and placing the wafer on the wax liquid after the wax is completely melted, wherein the front surface of the wafer faces downwards; the wafer and the cushion pad 123 may then be bonded together after the entire system is cooled for subsequent grinding or polishing operations.
The high-temperature adhesive tape can be made of polyimide, the polyimide has a high melting point, is insoluble in most organic solvents and has outstanding creep resistance and dimensional stability, the wax removal is carried out on a hot plate at 100 ℃, the wax removal is assisted by dropping the organic solvents (such as wax liquid), and the high-temperature adhesive tape is prevented from peeling off due to thermal deformation in the process, so that the polyimide film is selected as the high-temperature adhesive tape.
In another specific embodiment, the buffer pad 123 is made of photoresist, the vacuum adsorption stage is used to fix the clamping device 12, the coater is used to drop the photoresist on the clamping base 121, and the wax dropping method is similar to the wax dropping method by using the high temperature adhesive tape, and is not described herein again; the subsequent dewaxing cleaning process can adopt stripping liquid to clean the clamping device 12, and the mode can also effectively reduce the front scratch of the wafer.
Referring to fig. 2, fig. 2 is a schematic view of the polishing pad 112 of the present embodiment, wherein at least one groove or hole 1112 is disposed on the polishing pad 112, as shown in fig. 2, the groove or hole 1112 is uniformly or non-uniformly distributed on the polishing pad 112, it can be understood that the shape of the groove or hole 1112 includes a triangle, a rectangle, a circle, or a sector, wherein the groove or hole 1112 is used for storing polishing slurry during a wafer polishing process to increase a polishing rate; in addition, due to the design of the holes of the polishing pad 112, a certain amount of air is always remained in the holes during the polishing process, so that the wafer and the polishing pad 112 are not tightly bonded due to pressure difference, and the process difficulty of discharging the wafer is reduced. Specifically, in the polishing process, adding polishing solution between the wafer and the polishing pad 112 is an indispensable process flow, and since the polishing solution can further etch the surface of the wafer, the adding of the polishing solution can further increase the speed rate of the surface of the wafer, i.e., increase the polishing rate, the conventional polishing pad 112 is made of a whole piece of soft material, the polishing principle is mainly completed by the friction between the surface of the wafer and the surface of the polishing pad 112, the polishing rate is mainly achieved by increasing the extrusion force applied to the surface of the wafer by the clamping device 12, and the application not only sets the counterweight 122 capable of adjusting the extrusion force, but also can store the holes for the polishing solution by design, so that the polishing efficiency is further increased, and the yield of the wafer polishing can be ensured.
Referring to fig. 3, fig. 3 is another schematic view of the polishing pad 112 in the present embodiment, a plurality of concentric circular annular grooves 1112 are disposed on the polishing pad 112, wherein radial distances between the annular grooves 1112 may be equal or different, widths of the annular grooves 1112 in the radial direction may be equal or different, and the annular grooves 1112 have the same function as the grooves or holes of the polishing pad 112 in fig. 2, which is not described herein again. It should be added that the polishing pad 112 with the microstructure on the surface of the annular groove 1112 facilitates the dispersion of the polishing liquid during the rapid rotation of the supporting device 11, i.e. the distribution of the polishing liquid in the annular groove 1112 is more uniform, and the polishing uniformity of the wafer surface is better.
Referring to fig. 4, fig. 4 is a schematic structural diagram of another embodiment of a wafer polishing apparatus 10 provided in the present application, including: a support device 11 and a clamping device 12.
The supporting device 11 includes a supporting base 111 and a polishing pad 112 disposed on the supporting base 111, the holding device 12 includes a holding base 121 and a weight 122 disposed on the holding base 121, and the holding device 12 is used for clamping a wafer on the polishing pad 112 during a polishing process.
In this embodiment, the wafer polishing apparatus 10 further includes a water spraying device 14, wherein the water spraying device 14 is disposed above the polishing pad 112; the water spray device 14 can spray water to the polishing pad 112 after polishing is finished, so as to keep the polishing pad 112 wet and prolong the service life of the polishing pad 112. Specifically, the present embodiment can keep the polishing pad 112 in a wet state when the next polishing is started by spraying water to the polishing pad 112 after the completion of the wafer polishing and the wafer mounting process so as to moisturize the polishing pad 112, so that the surface of the polishing pad 112 is soft. In other words, the polishing process is always performed on the wet polishing pad 112. Therefore, the wafer polishing apparatus 10 of the present embodiment not only can improve the chemical mechanical polishing effect, but also can greatly prolong the service life of the polishing pad 112.
Referring to fig. 5, fig. 5 is a schematic structural diagram of another embodiment of a wafer polishing apparatus 10 according to the present application, including: a support device 11 and a clamping device 12.
The supporting device 11 includes a supporting base 111 and a polishing pad 112 disposed on the supporting base 111, the holding device 12 includes a holding base 121 and a weight 122 disposed on the holding base 121, and the holding device 12 is used for clamping a wafer on the polishing pad 112 during a polishing process.
In this embodiment, the wafer polishing apparatus 10 further includes a thickness detection device 15 located above the polishing pad 112, the thickness detection device 15 is configured to detect a reduced thickness of the polishing pad 112, the thickness detection device 15 is located above the polishing pad 112, and a distance from the thickness detection device 15 to a center of the polishing pad 112 is consistent with a distance from a center of the holding device 12 to a center of the polishing pad 112; so that the thickness detection device 15 can measure the reduced thickness of the polishing pad 112 corresponding to the position of the holding device 12, and the thickness detection device 15 is connected with the controller and transmits the measured reduced thickness of the polishing pad 112 to the controller; the controller is further connected to the clamping device 12, and transmits the obtained reduced thickness of the polishing pad 12 to the clamping device 12, and the clamping device 12 drives the clamping base 121 to move downwards by the same distance according to the thickness, so that the distance from the polishing pad 112 to the polished surface of the wafer is kept stable, and the polishing efficiency is improved.
Further, the thickness detection device 15 is a laser sensor, and the laser sensor can emit laser to the surface of the wafer and receive the laser reflected by the surface of the wafer to obtain the distance from the thickness detection device 15 to the surface of the wafer; moreover, the resolution of the thickness detection device 15 is 20 micrometers to 30 micrometers, so that the thickness of the polishing pad 112 thinned during polishing can be accurately obtained.
Referring to fig. 6, fig. 6 is a schematic structural diagram of a wafer polishing apparatus 10 according to another embodiment of the present application, the apparatus including: a support device 11, a clamping device 12 and a voltage detection device 13.
In this embodiment, the polishing pad 112 is a piezoelectric polishing pad, that is, the polishing pad 112 exhibits different voltage distributions under different pressures, the voltage detection device 13 is used to connect with the polishing pad 112, and can dynamically detect the voltage distributions of different regions of the polishing pad 112, that is, the voltage distributions of the corresponding different regions, because of the difference in the roughness of the wafer surface, under the condition that the same weight 122 is uniformly pressed, the clamping forces of the different regions of the polishing pad 112 are different, and the pressures corresponding to the piezoelectric polishing pad are different, at this time, the voltage detection device 13 can dynamically detect the voltage changes corresponding to the surface of the piezoelectric polishing pad, and for the region with larger voltage difference (that is, the roughness difference is larger) in the local region, the polishing force can be increased by increasing the weight of the weight 122.
The above embodiments are merely examples, and not intended to limit the scope of the present application, and all modifications, equivalents, and flow charts using the contents of the specification and drawings of the present application, or those directly or indirectly applied to other related arts, are included in the scope of the present application.
Claims (10)
1. A wafer polishing device is characterized by comprising a supporting device and a clamping device;
the supporting device comprises a supporting base and a polishing pad arranged on the supporting base;
the clamping device comprises a balancing weight, a clamping base and a cushion pad, the balancing weight is arranged on one surface of the clamping base, and the cushion pad is arranged on one surface, far away from the balancing weight, of the clamping base;
the clamping device is used for contacting a wafer with the polishing pad, the balancing weight is used for adjusting the clamping force of the clamping device, and the buffer pad is adhered to the non-polishing surface of the wafer.
2. The wafer polishing apparatus according to claim 1,
the buffer pad comprises a high-temperature adhesive tape or photoresist, and the high-temperature adhesive tape is a polyimide film.
3. The wafer polishing apparatus according to claim 1,
the polishing pad is provided with at least one groove or hole, the groove or hole is uniformly or non-uniformly distributed on the polishing pad, and the shape of the groove or hole comprises a triangle, a rectangle or a circle.
4. The wafer polishing apparatus according to claim 1,
the polishing pad is provided with a plurality of concentric annular grooves, wherein the radial distances among the annular grooves are equal or unequal.
5. The wafer polishing apparatus according to claim 1,
the wafer polishing device further comprises a water spraying device, the water spraying device is arranged above the polishing pad, and the water spraying device is used for spraying water to the polishing pad after the polishing process is finished.
6. The wafer polishing apparatus according to claim 1,
the polishing pad is a piezoelectric polishing pad, the wafer polishing device further comprises a voltage detection device connected with the piezoelectric polishing pad, and the voltage detection device is used for detecting the extrusion force corresponding to the surface of the piezoelectric polishing pad and adjusting the weight of the balancing weight corresponding to different areas of the polishing pad according to the local difference of the extrusion force.
7. The wafer polishing apparatus according to claim 1,
the wafer polishing device further comprises a thickness detection device positioned above the polishing pad, and the thickness detection device is used for dynamically detecting the thickness of the polishing pad.
8. The wafer polishing apparatus according to claim 7,
the distance from the thickness detection device to the center of the polishing pad is substantially equal to the distance from the center of the clamping device to the center of the polishing pad.
9. The wafer polishing apparatus according to claim 7,
the wafer polishing device further comprises a controller connected with the thickness detection device, wherein the controller is further connected with the clamping device, the controller transmits the thinned thickness of the polishing pad to the clamping device according to the obtained thickness, and the clamping device drives the clamping base to move downwards for the same distance according to the thickness.
10. The wafer polishing apparatus according to claim 7,
the thickness detection device is a laser sensor, and the laser sensor can emit laser to the surface of the wafer and receive the laser reflected by the surface of the wafer to obtain the distance from the thickness detection device to the surface of the wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922497434.8U CN211728760U (en) | 2019-12-31 | 2019-12-31 | Wafer polishing device |
| PCT/CN2020/134400 WO2021135849A1 (en) | 2019-12-31 | 2020-12-08 | Wafer polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922497434.8U CN211728760U (en) | 2019-12-31 | 2019-12-31 | Wafer polishing device |
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| CN211728760U true CN211728760U (en) | 2020-10-23 |
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| CN201922497434.8U Active CN211728760U (en) | 2019-12-31 | 2019-12-31 | Wafer polishing device |
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| CN (1) | CN211728760U (en) |
| WO (1) | WO2021135849A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021135849A1 (en) * | 2019-12-31 | 2021-07-08 | 深圳市中光工业技术研究院 | Wafer polishing device |
| WO2022116553A1 (en) * | 2020-12-03 | 2022-06-09 | 长鑫存储技术有限公司 | Pressure measurement system and pressure measurement method |
| US12042902B2 (en) | 2020-12-03 | 2024-07-23 | Changxin Memory Technologies, Inc. | Force measurement system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12030156B2 (en) | 2020-06-24 | 2024-07-09 | Applied Materials, Inc. | Polishing carrier head with piezoelectric pressure control |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100553884C (en) * | 2008-07-03 | 2009-10-28 | 大连理工大学 | Ultra-precise low-damage polish of large size diamond wafer method and device |
| US8696405B2 (en) * | 2010-03-12 | 2014-04-15 | Wayne O. Duescher | Pivot-balanced floating platen lapping machine |
| CN102157413B (en) * | 2011-01-20 | 2012-08-15 | 大连理工大学 | On-line measuring device for frictional force generated during polishing of small-sized wafer |
| TWI548483B (en) * | 2011-07-19 | 2016-09-11 | 荏原製作所股份有限公司 | Polishing device and method |
| CN103624673B (en) * | 2012-08-21 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | The method of chemical mechanical polishing apparatus and chemico-mechanical polishing |
| US10328549B2 (en) * | 2013-12-11 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polishing head, chemical-mechanical polishing system and method for polishing substrate |
| CN206622963U (en) * | 2016-06-13 | 2017-11-10 | K.C.科技股份有限公司 | Chemical mechanical polishing device |
| US20180169827A1 (en) * | 2016-12-16 | 2018-06-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Methods for making chemical mechanical planarization (cmp) polishing pads having integral windows |
| CN207564300U (en) * | 2017-11-24 | 2018-07-03 | 河南佰特科技有限公司 | A kind of special grinding and polishing device of diamond thin |
| CN211728760U (en) * | 2019-12-31 | 2020-10-23 | 深圳市中光工业技术研究院 | Wafer polishing device |
-
2019
- 2019-12-31 CN CN201922497434.8U patent/CN211728760U/en active Active
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2020
- 2020-12-08 WO PCT/CN2020/134400 patent/WO2021135849A1/en active Application Filing
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021135849A1 (en) * | 2019-12-31 | 2021-07-08 | 深圳市中光工业技术研究院 | Wafer polishing device |
| WO2022116553A1 (en) * | 2020-12-03 | 2022-06-09 | 长鑫存储技术有限公司 | Pressure measurement system and pressure measurement method |
| US12042902B2 (en) | 2020-12-03 | 2024-07-23 | Changxin Memory Technologies, Inc. | Force measurement system |
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| Publication number | Publication date |
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| WO2021135849A1 (en) | 2021-07-08 |
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