CN100553884C - Ultra-precise low-damage polish of large size diamond wafer method and device - Google Patents
Ultra-precise low-damage polish of large size diamond wafer method and device Download PDFInfo
- Publication number
- CN100553884C CN100553884C CNB2008100121829A CN200810012182A CN100553884C CN 100553884 C CN100553884 C CN 100553884C CN B2008100121829 A CNB2008100121829 A CN B2008100121829A CN 200810012182 A CN200810012182 A CN 200810012182A CN 100553884 C CN100553884 C CN 100553884C
- Authority
- CN
- China
- Prior art keywords
- polishing
- diamond wafer
- rubbing head
- polishing disk
- machining area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 56
- 239000010432 diamond Substances 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 90
- 238000010438 heat treatment Methods 0.000 claims abstract description 46
- 238000003754 machining Methods 0.000 claims abstract description 24
- 230000000694 effects Effects 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 17
- 239000012530 fluid Substances 0.000 claims description 16
- 239000010425 asbestos Substances 0.000 claims description 13
- 229910052895 riebeckite Inorganic materials 0.000 claims description 13
- 229910001018 Cast iron Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 238000013517 stratification Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 6
- 238000009835 boiling Methods 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 37
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- POIUWJQBRNEFGX-XAMSXPGMSA-N cathelicidin Chemical compound C([C@@H](C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CO)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(O)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CC(O)=O)NC(=O)CNC(=O)[C@H](CC(C)C)NC(=O)[C@@H](N)CC(C)C)C1=CC=CC=C1 POIUWJQBRNEFGX-XAMSXPGMSA-N 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 229910001573 adamantine Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention belongs to superhard material polishing technology field, disclose a kind of ultra-precise low-damage polish of large size diamond wafer method and apparatus.It is characterized in that burnishing device comprises polishing machine body, polishing disk, rubbing head, material-dripping machine, collector ring, polishing machine outer cover, electrical heating temperature-adjusting device etc.During polishing, the polishing disk rotating speed is 50～120r/min; The rubbing head rotating speed is that 30～60r/min, rubbing head swing speed are 6～10 times/min; Polish pressure is 0.2～0.8MPa; Utilize the built-in electric boiling plate heating of rubbing head, make the local temperature of machining area reach 50～150 ℃; Utilization realizes that in local chemistry and the mechanical compound action that produces of machining area the trace of diamond wafer surfacing is removed.Effect of the present invention and benefit are owing to adopt machining area local heat method, in the processing of large size diamond wafer, can effectively solve difficult problems such as large scale polishing disk distortion that high temperature causes and diamond wafer buckling deformation.
Description
Technical field
The invention belongs to superhard material polishing technology field, relate to the Ultraprecise polished method and apparatus of a kind of large size diamond wafer.
Background technology
Diamond is present unique material that possesses high rigidity, high chemical inertness, high thermal conductivity coefficient, high elastic modulus, high insulation, broad-band gap and low-friction coefficient simultaneously, all can become irreplaceable material superfine product in a lot of applications.The technology of preparing of chemical vapour deposition diamond (CVD) film and performance characterization etc. have been obtained many breakthroughs, make adamantine application no longer be confined to fields such as traditional cutter, mould, develop to high-technology fields such as optics, calorifics, semiconductor, acoustics gradually.But owing to be subjected to the restriction of crystal phase growth mechanism, increase along with wafer thickness, its surface roughness and grain size also can increase to several microns even tens microns, must adopt precision machining method that its surface roughness is reduced to nanometer scale, and reach certain surface precision, just can come into operation.When high-technology field is used, not only require diamond wafer to have minimum surface roughness especially, also its surface precision and surface integrity have been proposed very high requirement simultaneously.Relatively lagging behind of the planarization of diamond wafer polishing at present, especially the ultraprecise not damaged of large scale CVD diamond wafer polishing planarization has become the bottleneck problem that diamond wafer is used widely at high-technology field.
Because diamond is the present known the highest and high chemically inert material of hardness, make existing polishing technology be difficult to realize the ultraprecise not damaged Surface Machining of large size diamond wafer.For example, polishing technologies such as laser beam polishing, ion beam polishing are primarily aimed at the diamond wafer of small size (φ≤1 inch) at present, and equipment complexity, cost height, are difficult to industrialization production; Thermo-chemical polishing technology and electro-spark polishing technology, though can realize large size diamond wafer polishing planarization at present, its polished surface roughness Ra only can reach the hundreds of nanometer level, and finished surface is brought damage and pollution; Though traditional mechanical polishing technology can be realized the nanoscale polishing, polishing efficiency is very low, stays the cut equivalent damage at diamond surface easily.Chemically mechanical polishing (CMP) is the optimal processing method that realizes large-sized silicon wafers ultra-smooth not damaged Surface Machining at present as a kind of Ultraprecision Machining based on chemistry and mechanical compound action principle, is used widely in IC manufacturing field.Though the cmp method at diamond film is also arranged at present, and polishing efficiency is lower, that is that all right is ripe for glossing, and owing to adopt polishing disk monoblock type heating means, exists energy resource consumption big; Polishing fluid evaporation loss is big, is difficult to guarantee the problems such as stability of polishing fluid composition, and especially along with the increase of diamond wafer size, problems such as polishing disk distortion that high temperature causes and diamond wafer buckling deformation are more outstanding.Existing polishing technology and equipment can't satisfy the high efficiency, low cost ultraprecise processing request to large size diamond wafer.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of ultra-precise low-damage polish method and device at large scale CVD diamond wafer.
The technical scheme that finishing method of the present invention adopted is:
In polishing process, when rotating with polishing disk, swings rubbing head, and the diamond wafer that is pasted on the rubbing head bottom contacts with polishing disk with certain pressure, and carries out complicated polishing campaign.The polishing disk rotating speed is 50～120r/min; The rubbing head rotating speed is 30～60r/min; The rubbing head swing speed is 6～10 times/min.Polish pressure is regulated by the quality that changes balancing weight, and polish pressure is 0.2～0.8Mpa.Polishing disk adopts cast iron plate, glass plate, ceramic disk or polishing pad, during polishing without any need for gas shield.Utilize the built-in heating plate of rubbing head, thermocouple and external electrical heating temperature-adjusting device that the local temperature of machining area is detected and controls, the machining area local temperature is 50～150 ℃.Adopt liquid-drop machine to splash into polishing fluid to machining area, the polishing fluid flow is 1～8ml/min.Under certain temperature condition, the polishing fluid of machining area and processed diamond wafer surfacing produce chemical reaction and form one deck chemical reaction film, and the mechanism by the abrasive particle in the polishing fluid and polishing disk or polishing pad is with this stratification reactive film removal, the diamond wafer surface is exposed again, alternation procedure by this chemistry and two kinds of effects of machinery, realize the trace removal of diamond wafer surfacing, reach the purpose of polishing.
Burnishing device of the present invention comprises polishing machine body, polishing disk, rubbing head, material-dripping machine, polishing machine outer cover, collector ring, and external electrical heating temperature-adjusting device etc. is partly formed.Polishing disk adopts cast iron plate, glass plate, ceramic disk and polishing pad etc., makes polishing disk under severe corrosive polishing environment, has good corrosion resistance and abrasive resistance, to guarantee the surface precision of finished surface.Rubbing head is by glass plate, balancing weight, and built-in electric heater unit and thermocouple etc. partly form, and for the corrosiveness of polishing fluid in preventing to polish to rubbing head, corrosion-resistant good glass plate has been adopted in the rubbing head bottom.Built-in electric heater unit is made up of heating plate, heating tank, asbestos board, cushion block and end cap etc., and heating plate is fixed in the heating tank of sealing, and by asbestos board itself and heating tank is insulated.In addition,, and utilize cushion block to make the enclosure space that forms a height 10mm between multilayer asbestos board and the heating tank end cap, distribute in a large number with lead from balancing weight with the solution heat and pass through problem at heating plate top pad multilayer asbestos board.Regulate polish pressure by the method that changes balancing weight quantity, the nickel plating protection is carried out to improve its corrosion resistance in the balancing weight outside.Collector ring is fixed in rubbing head top, is used for the importing of heating plate electric current and the derivation of thermocouple signal.Processed diamond wafer is pasted on the glass plate surface of rubbing head bottom,, once only pastes one and make itself and rubbing head concentric for large size diamond wafer; For the small size diamond wafer, for guarantee in the polishing process stressed evenly, paste a plurality of simultaneously and it evenly distributed along the rubbing head circumference.On the top of pasting diamond wafer,, insert thermocouple, and signal is derived by collector ring to glass plate and the boring of heating tank base plate.External electrical heating temperature-adjusting device by changing the size of current of heating plate, remains in the design temperature scope temperature of machining area according to the variations in temperature of machining area.
Effect of the present invention and benefit are: by adopting machining area local heat method, the problems such as stability that the energy resource consumption that exists in traditional polishing disk monoblock type heating means is big, polishing fluid evaporation loss is big, be difficult to guarantee the polishing fluid composition have been solved, especially in the processing for large size diamond wafer, can effectively solve difficult problems such as large scale polishing disk distortion that high temperature causes and diamond film buckling deformation, the surface precision of raising diamond wafer.In addition, burnishing device is simple in structure, the polished surface quality is good, and processing cost is low, has higher polishing efficiency, has solved that the polished surface that exists in present electro-spark polishing and the thermo-chemical polishing is second-rate, surface precision is lower, there are problems such as pollution on the surface.
Description of drawings
Fig. 1 is a burnishing device structural representation of the present invention.
Fig. 2 is the rubbing head structural representation in the burnishing device of the present invention.
Among the figure: 1 polishing machine main shaft; 2 polishing disks; 3 thermocouples; The 4CVD diamond wafer; 5 glass plates; 6 heating plates; 7 balancing weight A; 8 balancing weight B; 9 polishing machine outer covers; 10 collector rings; 11 leads; 12 electrical heating temperature-adjusting devices; 13 polishing fluids; 14 material-dripping machines; 15 heating tanks; 16 asbestos boards; 17 cushion blocks; 18 end caps; 19 axis of guides; 20 bolts.
The specific embodiment
Describe the specific embodiment of the invention in detail below in conjunction with technical scheme and accompanying drawing.
Embodiment:
As shown in Figure 1, burnishing device of the present invention comprises polishing machine body, polishing disk 2, rubbing head, material-dripping machine 14, collector ring 10, polishing machine outer cover 9, and external electrical heating temperature-adjusting device 12 etc. is partly formed.Polishing machine outer cover 9 is installed on the polishing disk 2, rotates with polishing machine, is mainly used in and prevents that the outer of corrosivity polishing fluid from spattering.Polishing disk 2 adopts cast iron plate, glass plate, ceramic disk and the polishing pad etc. with good corrosion resistance and abrasive resistance.Rubbing head is by glass plate 5, balancing weight A, and built-in electric boiling plate 6 and thermocouple 3 etc. are partly formed.The glass plate 5 of excellent corrosion resistance is adopted in the rubbing head bottom, and diamond wafer is pasted on this glass plate surface.Paste firmly in order to make diamond wafer, earlier have identical shaped and behind the shallow slot that size is bigger at one of glass plate assigned address processing and diamond wafer, with the polyimides two-sided tape diamond wafer is affixed in this shallow slot, and make diamond wafer surface after the stickup a little more than the glass plate surface.Be positioned at the collector ring 10 on rubbing head top, be used for the importing of heating plate electric current and the derivation of thermocouple signal.External electrical heating temperature-adjusting device 12 is according to the temperature information of the machining area of thermocouple 3 feedbacks that are positioned at diamond wafer top, and the size of current of regulating heating plate remains in the design temperature scope temperature of machining area.Utilize liquid-drop machine 14 polishing fluid 13 to be splashed into machining area by setting flow.
As shown in Figure 2, electric heater unit built-in in the burnishing device of the present invention is made up of electric boiling plate 6, heating tank 15, asbestos board 16, cushion block 17 and end cap 18 etc., electrical heating 6 plates are fixed in the heating tank 15 of sealing, and by asbestos board 16 itself and heating tank 15 are insulated.In addition,, and utilize cushion block 17 to make the enclosure space that forms a high 10mm of being about between multilayer asbestos board 16 and the heating tank end cap 18, distribute in a large number with lead from balancing weight with the solution heat and pass through problem at heating plate 6 top pad multilayer asbestos boards 16.Balancing weight A and balancing weight B are contained on the axis of guide 19, and the balancing weight B that wherein is positioned at the rubbing head topmost also is used for fixing collector ring 10 except being used for counterweight.The size of polish pressure is mainly regulated by the quantity of increase and decrease balancing weight A.
As shown in Figure 1, the course of work of ultra-precise low-damage polish of large size diamond wafer is: diamond wafer 4 is attached on the glass plate 5 of rubbing head bottom, and diamond wafer 4 is contacted with polishing disk 2 with certain pressure.Polishing disk 2 is during with the rotational speed of 70r/min, the rotating speed revolution that rubbing head is pressed 35r/min with polishing disk, and do oscillating motion with 8 times/min speed.Utilize heating plate 6 that machining area is heated to about 60 ℃, the quantity of regulating balancing weight A reaches about 0.24Mpa polish pressure.The polishing fluid 13 that utilizes liquid-drop machine 14 will have strong oxidizing property splashes into machining area by the 2ml/min traffic requirement, it is contacted with processed diamond wafer surface, and under chemistry and mechanical friction compound action, repeat the oxidation of diamond wafer material and the alternation procedure of removal oxide-film, thereby realize Ultraprecise polished.
Claims (3)
1. the ultra-precise low-damage polish of large size diamond wafer device comprises polishing machine body, polishing disk (2), rubbing head, material-dripping machine (14), polishing machine outer cover (9), collector ring (10) and external electrical heating temperature-adjusting device (12); Polishing disk (2) is rotated counterclockwise with the rotating speed of 50～120r/min, and the diamond wafer (4) that is pasted on rubbing head bottom contact with polishing disk (2) with the polish pressure of 0.2～0.8Mpa, and the rotating speed with 30～60r/min rotates on polishing disk (2); Rubbing head comprises glass plate (5), balancing weight A (7), balancing weight B (8), built-in electric heater unit and thermocouple (3); Built-in electric heater unit comprises heating plate (6), heating tank (15), asbestos board (16), cushion block (17) and heating tank end cap (18), heating plate (6) is fixed in the heating tank (15) of sealing, and by asbestos board (16) itself and heating tank (15) is insulated; At heating plate (16) top pad multilayer asbestos board, and utilize cushion block (17) to make the enclosure space that forms a height 10mm between multilayer asbestos board and the heating tank end cap; Collector ring (10) is fixed in rubbing head top; On the top of pasting diamond wafer,, insert thermocouple (3), and signal is derived by collector ring (10) to glass plate (5) and the boring of heating tank (15) base plate; External electrical heating temperature-adjusting device (12) by changing the size of current of heating plate (6), remains in 50～150 ℃ of temperature ranges of setting the temperature of machining area according to the variations in temperature of machining area.
2. ultra-precise low-damage polish of large size diamond wafer device according to claim 1 is characterized in that fluting is combined with the polyimides two-sided tape is bonding, so that diamond wafer is pasted firmly.
3. use claim 1 or 2 described burnishing devices that large size diamond wafer is carried out the method for ultra-precise low-damage polish, it is characterized in that: in the polishing process, polishing disk is done rotation counterclockwise, and its rotating speed is 50～120r/min; The diamond wafer that is pasted on rubbing head bottom contacts with polishing disk with the pressure of 0.2～0.8Mpa, and rotates with polishing disk; The rubbing head rotating speed is 30～60r/min, and the rubbing head swing speed is 6～10 times/min; Polish pressure is 0.2～0.8Mpa; Utilize the built-in heating plate of rubbing head (6), thermocouple and external electrical heating temperature-adjusting device (12) that the local temperature of machining area is detected and controls, make the temperature of machining area reach 50～150 ℃; The polishing fluid flow is 1～8ml/min; Polishing disk adopts cast iron plate, glass plate, ceramic disk; During polishing without any need for gas shield; In polishing process, the polishing fluid of machining area and processed diamond wafer surfacing produce chemical reaction and form one deck chemical reaction film, and the mechanism by abrasive particle in the polishing fluid and polishing disk is with this stratification reactive film removal, the diamond wafer surface is exposed again, by the alternation procedure of this chemistry and two kinds of effects of machinery, realize the polishing of diamond wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100121829A CN100553884C (en) | 2008-07-03 | 2008-07-03 | Ultra-precise low-damage polish of large size diamond wafer method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100121829A CN100553884C (en) | 2008-07-03 | 2008-07-03 | Ultra-precise low-damage polish of large size diamond wafer method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101301735A CN101301735A (en) | 2008-11-12 |
| CN100553884C true CN100553884C (en) | 2009-10-28 |
Family
ID=40111925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2008100121829A Expired - Fee Related CN100553884C (en) | 2008-07-03 | 2008-07-03 | Ultra-precise low-damage polish of large size diamond wafer method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100553884C (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157413B (en) * | 2011-01-20 | 2012-08-15 | 大连理工大学 | On-line measuring device for frictional force generated during polishing of small-sized wafer |
| CN105780101B (en) * | 2016-01-27 | 2018-06-26 | 杨继芳 | A kind of Novel electrolytic polissoir |
| US10350724B2 (en) | 2017-07-31 | 2019-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Temperature control in chemical mechanical polish |
| CN108188922A (en) * | 2018-03-20 | 2018-06-22 | 京东方科技集团股份有限公司 | A kind of surface manufacturing process of jig process equipment and jig |
| CN108621022A (en) * | 2018-07-16 | 2018-10-09 | 济南中乌新材料有限公司 | A kind of large dimond single wafer surface chemical mechanical polishing apparatus |
| CN109616412A (en) * | 2018-12-14 | 2019-04-12 | 大连理工大学 | A kind of semiconductor wafer processing method that photochemistry is combined with mechanical polishing |
| CN112677032A (en) * | 2019-10-17 | 2021-04-20 | 夏泰鑫半导体(青岛)有限公司 | Grinding fluid conveying module and chemical mechanical grinding device |
| CN110774153B (en) * | 2019-10-23 | 2022-02-08 | 华侨大学 | Polishing method of large-size single crystal diamond |
| CN211728760U (en) * | 2019-12-31 | 2020-10-23 | 深圳市中光工业技术研究院 | Wafer polishing device |
| CN114083419B (en) * | 2021-11-08 | 2023-09-05 | 浙江晶盛机电股份有限公司 | Disk-shaped adjustable polishing disk, polishing device and regulating method |
| CN117463183A (en) * | 2023-12-27 | 2024-01-30 | 中唯精密工业有限公司 | Plasma nanometer polishing solution stirring device and polishing equipment |
-
2008
- 2008-07-03 CN CNB2008100121829A patent/CN100553884C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101301735A (en) | 2008-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100553884C (en) | Ultra-precise low-damage polish of large size diamond wafer method and device | |
| KR100729022B1 (en) | Apparatus and method for polishiing | |
| US8133097B2 (en) | Polishing apparatus | |
| CN110197789B (en) | Ultrasonic-assisted electrochemical mechanical polishing device and method for SiC single crystal wafer | |
| TW201225170A (en) | Method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers | |
| CN112405333B (en) | Chemical mechanical polishing device and polishing method | |
| JP7001165B2 (en) | Manufacturing method of electrostatic chuck device and electrostatic chuck device | |
| CN201516579U (en) | Precision grinding tool | |
| CN107953242A (en) | Color-buffing finish device and polishing system | |
| CN115070605B (en) | Polishing equipment and working method thereof | |
| CN208543356U (en) | A kind of large dimond single wafer surface chemical mechanical polishing apparatus | |
| CN213917712U (en) | Chemical mechanical polishing device | |
| CN112018021A (en) | Electrostatic chuck with renewable performance and forming method thereof | |
| CN107263301B (en) | A kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece | |
| CN116038555A (en) | Tandem polishing device for laser stripping silicon carbide thin slice | |
| CN111975461B (en) | Cluster magnetorheological polishing device and performance test method thereof | |
| WO2014189039A1 (en) | Semiconductor-wafer-holding jig, semiconductor-wafer polishing device, and workpiece-holding jig | |
| US6155913A (en) | Double polishing head | |
| JP2002192458A (en) | Polishing method and polishing device using electroviscous fluid | |
| CN112222956A (en) | Polishing device, polishing method and application based on dynamic magnetic field | |
| KR100941198B1 (en) | Pad for chamical machanical polishing | |
| JP4464019B2 (en) | Polishing work holding plate, work polishing apparatus and polishing method | |
| CN215050679U (en) | Support plate capable of being cleaned online | |
| CN218785454U (en) | Silicon carbide double-side grinding carrier and double-side grinding equipment | |
| TWI598184B (en) | Polishing head of cmp apparatus comprising high strength alloy |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091028 Termination date: 20130703 |