CN211505161U - Sample for quantitatively analyzing interface binding force of medium film/substrate - Google Patents
Sample for quantitatively analyzing interface binding force of medium film/substrate Download PDFInfo
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- CN211505161U CN211505161U CN201922195747.8U CN201922195747U CN211505161U CN 211505161 U CN211505161 U CN 211505161U CN 201922195747 U CN201922195747 U CN 201922195747U CN 211505161 U CN211505161 U CN 211505161U
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Abstract
The utility model relates to a material properties sign field, concretely relates to a sample for quantitative analysis medium film/basement interface cohesion, include: a substrate; a dielectric film disposed on the substrate; the first metal circuit layer is arranged between the substrate and the dielectric film and used for separating one end of the dielectric film from the substrate; and the second metal circuit layer is arranged on one side of the dielectric film opposite to the first metal circuit layer, and the second metal circuit layer is matched with the first metal circuit layer to clamp one end of the dielectric film so as to form a free end to be clamped of the dielectric film. The utility model provides a sample, when will testing medium film/basement interface cohesion, only need with two tensile anchor clamps respectively centre gripping basement and medium film treat the centre gripping free end, stretch again can, simple structure, and need not receive the restriction of other materials in the use, be convenient for test medium film/basement interface cohesion.
Description
Technical Field
The utility model relates to a material performance representation field, concretely relates to a sample that is used for quantitative analysis medium film/basement interface cohesion.
Background
In advanced packaging, a dielectric film is used as a rewiring layer, which is an important interconnection technology, and at the moment, the interface bonding force between the dielectric film and adjacent substrates such as a circuit layer, silicon oxide, a plastic package material, underfill and the like is an important factor influencing the reliability of a packaging interface.
The conventional method for quantitatively analyzing the interface binding force of the medium film/substrate is usually a mechanical method, i.e. a tensile force is applied in a direction perpendicular to the interface direction of the medium film and the substrate, and the load is gradually increased, wherein the tensile force when the medium film is separated from the substrate is the interface binding force.
However, because the thickness of the dielectric film is usually small and the dielectric film is directly grown on the substrate, when the bonding force of the dielectric film/substrate interface is tested by a mechanical method at present, the dielectric film or the substrate is usually respectively adhered and fixed on two opposite tensile clamps by using the adhesive glue and then tested, the test by using the method requires that the bonding force of the dielectric film/substrate interface must be smaller than the adhesive force of the adhesive glue to carry out quantitative measurement, otherwise, if the adhesive glue fails before the dielectric film/substrate interface, the bonding force of the dielectric film/substrate interface cannot be obtained, thereby causing the application limitation.
SUMMERY OF THE UTILITY MODEL
Therefore, the to-be-solved technical problem of the present invention lies in overcoming the problem that the adhesion force that requires the interface cohesion to be less than the adhesive cement must be measured when fixing the medium film or the substrate on the tensile fixture for the interface cohesion test through utilizing the adhesive cement among the prior art, resulting in that the application of this method receives the defect of restriction to provide a sample for quantitative analysis medium film/substrate interface cohesion.
In order to solve the technical problem, the utility model discloses a technical scheme does:
a sample for quantitatively analyzing the binding force at the media film/substrate interface, comprising:
a substrate;
a dielectric film disposed on the substrate;
the first metal circuit layer is arranged between the substrate and the dielectric film and used for separating one end of the dielectric film from the substrate;
and the second metal circuit layer is arranged on one side of the dielectric film opposite to the first metal circuit layer, and the second metal circuit layer is matched with the first metal circuit layer to clamp one end of the dielectric film so as to form a free end to be clamped of the dielectric film.
Further, in the extending direction of the dielectric film, the dielectric film is overlapped with the first metal circuit layer, and the end of the second metal circuit layer is bent along the end of the dielectric film and extends toward the direction of the first metal circuit layer so as to be abutted against the first metal circuit layer.
Further, the second metal circuit layer covers the dielectric film completely.
Further, the thickness of the dielectric film is more than 1.5 times of the thickness of the first metal circuit layer.
Further, the thickness of the first metal line layer is 100-200 nm.
Further, the thickness of the second metal circuit layer is larger than 20 μm.
Further, the first metal circuit layer and the second metal circuit layer are both a copper metal circuit layer or an aluminum metal circuit layer.
Further, the substrate is one of a metal layer, a plastic package layer, a silicon oxide film or underfill.
Furthermore, the second metal circuit layer is bent to enable the free end to be clamped of the medium film to be perpendicular to the substrate.
Further, the device also comprises a wafer, and the substrate is fixed on the wafer.
The utility model discloses technical scheme has following advantage:
1. the utility model provides a sample for quantitatively analyzing the bonding force of a medium film/substrate interface, the first metal circuit layer and the second metal circuit layer are respectively arranged on the two sides of the dielectric film, the first metal circuit layer enables one end of the dielectric film to be separated from the substrate, the second metal circuit layer is matched with the first metal circuit layer to clamp one end of the dielectric film to form a free end to be clamped of the dielectric film, the arrangement of the second metal circuit layer is convenient for the stretching clamp to clamp the free end to be clamped of the dielectric film, when the bonding force of the medium film/substrate interface needs to be tested, only two stretching clamps are needed to respectively clamp the substrate and the free end of the medium film to be clamped, and then stretching is carried out, the structure is simple, and the use process is not limited by other materials, so that the bonding force of the medium film/substrate interface can be conveniently tested.
2. The utility model provides a sample, because in-process at the medium film growth probably leads to the long residual stress that can appear of medium film because reasons such as material mechanics or thermal behavior mismatch, and residual stress's existence can lead to the interface production crackle, thereby influence the test of medium film/basement interface cohesion, through will set up the medium film in the direction that extends along the medium film and carry out the part to first metal wiring layer and cover, the tip on second metal wiring layer is buckled along the thickness direction of medium film and is extended with the butt with first metal wiring layer towards the direction on first metal wiring layer, thereby can protect the medium film, and eliminate the residual stress in the medium film.
3. The utility model provides a sample through set up second metal line layer to carry out whole covers with the medium film to make second metal line layer can play fine guard action to the medium film.
4. The utility model provides a sample sets up through the thickness to dielectric film, first metal wire way layer and second metal wire way layer to can make things convenient for tensile anchor clamps to carry out the centre gripping to the centre gripping free end of treating of dielectric film under the purpose that realizes dielectric film's one end and basement separation.
5. The utility model provides a sample, copper metal circuit layer or aluminium metal circuit layer are comparatively metal circuit layer commonly used in the packaging technology, and the source is extensive, conveniently acquires.
6. The utility model provides a sample is through buckling second metal circuit layer to make the centre gripping free end and basement mutually perpendicular of treating of medium film, thereby can make things convenient for tensile anchor clamps to carry out the centre gripping to the centre gripping free end of treating of medium film, thereby be convenient for carry out quantitative analysis to medium film/basement interface cohesion.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a sample in embodiment 1 of the present invention;
FIG. 2 is a schematic structural view of a substrate perpendicular to a free end of a dielectric film in example 1 of the present invention;
reference numerals:
1. a substrate; 2. a first metal line layer; 3. a dielectric film; 4. a second metal line layer; 5. and (5) a wafer.
Detailed Description
The following examples are provided for better understanding of the present invention, and are not limited to the best mode, and do not limit the scope and content of the present invention, and any product that is the same or similar to the present invention, which is obtained by combining the features of the present invention with other prior art or the present invention, falls within the scope of the present invention.
The examples do not show the specific experimental steps or conditions, and can be performed according to the conventional experimental steps described in the literature in the field. The reagents or instruments used are not indicated by manufacturers, and are all conventional reagent products which can be obtained commercially.
Example 1
Referring to fig. 1-2, the present embodiment relates to a sample for quantitatively analyzing the bonding force of a dielectric film/substrate interface, which includes a substrate 1, a dielectric film 3, a first metal wiring layer 2, and a second metal wiring layer 4.
The dielectric film 3 is arranged on the substrate 1, the first metal circuit layer 2 is arranged between the substrate 1 and the dielectric film 3, the first metal circuit layer 2 is used for separating one end of the dielectric film 3 from the substrate 1, the second metal circuit layer 4 is arranged on the dielectric film 3, the second metal circuit layer 4 is arranged opposite to the first metal circuit layer 2, and the second metal circuit layer 4 is matched with the first metal circuit layer 2 to clamp one end of the dielectric film 3 to form a free end to be clamped of the dielectric film 3.
For eliminating the influence of residual stress on the dielectric film 3 on the interface bonding force test, on the direction that the dielectric film 3 extends, set up the dielectric film 3 into lapping with first metal circuit layer 2, the tip of second metal circuit layer 4 then buckles and extends towards the direction of first metal circuit layer 2 along the tip of dielectric film 3, finally with first metal circuit layer 2 butt, namely in this embodiment, first metal circuit layer 2 is the I font, second metal circuit layer 4 is the L shape, first metal circuit layer 2 and the tip of second metal circuit layer 4 cooperation centre gripping dielectric film 3 hide the tip of dielectric film 3.
In order to further protect the dielectric film 3, in the present embodiment, the second metal wiring layer 4 is also provided to cover the dielectric film 3 entirely.
Since the thickness of the dielectric film 3 is usually smaller, such as the thickness of the dielectric film P I pattern is only 8 μm, in order to enable the dielectric film 3 to grow on the first metal circuit layer 2, the thickness of the first metal circuit layer 2 needs to be set smaller, in an implementable manner, the thickness of the dielectric film 3 needs to be set to be more than 1.5 times the thickness of the first metal circuit layer 2, the thickness of the first metal circuit layer 2 is set to be 100-200nm, and in this embodiment, the thickness of the dielectric film 3 is 1.5 times the thickness of the first metal circuit layer 2. The pattern of the first metal line layer 2 may be rectangular or square, and the side length thereof may be set according to the model of a specific stretching jig, and the length thereof in the extending direction of the dielectric film 3 is generally greater than or equal to 5 mm. The second metal circuit layer 4 is mainly arranged to thicken the thickness of the dielectric film 3 so as to facilitate the stretching clamp to clamp the free end of the dielectric film 3 to be clamped, and therefore the thickness of the second metal circuit layer 4 is usually set to be greater than 20 μm. In the present embodiment, the first metal circuit layer 2 and the second metal circuit layer 4 are both copper metal circuit layers, and in other embodiments, the first metal circuit layer 2 and the second metal circuit layer 4 may also be aluminum metal circuit layers.
In order to facilitate the stretching of the clamp to clamp the free end of the dielectric film 3 to be clamped, in this embodiment, the second metal circuit layer 4 is further bent to make the free end of the dielectric film 3 to be clamped perpendicular to the substrate 1.
When the sample is used in the field of electronic packaging for experiments, the dielectric film 3 may be a dielectric film 3 suitable for electronic packaging, such as P I (polyimide), and the substrate 1 may be any one of a metal layer, a molding compound layer, a silicon oxide film, and an underfill encapsulant. In addition, in order to form the substrate 1, a wafer 5 is further provided in the sample, and the substrate 1 is provided on the wafer 5. In this embodiment, the dielectric film 3 is P I, and the substrate 1 is a molding layer.
The sample provided in this example was prepared as follows:
s1, coating a substrate 1 material on the wafer 5 and curing to obtain a substrate 1;
s2, manufacturing a first metal circuit layer 2 on the substrate 1;
s3, preparing a dielectric film 3 on the substrate 1 and the first metal wire path through gluing, developing, photoetching and curing;
s4, preparing a second metal circuit layer 4 on the dielectric film 3 to form a free end to be clamped of the dielectric film 3;
s5, the sample obtained in fig. 1 is bent so that the free end of the dielectric thin film 3 to be clamped is perpendicular to the substrate 1.
The principle of use of the sample provided in this example is as follows:
when the interface bonding force of the medium film 3/the substrate 1 needs to be tested, one stretching clamp clamps the free end to be clamped of the medium film 3 and the other stretching clamp clamps the wafer 5 by using a universal testing machine or a tensile testing machine, and then corresponding tensile force is applied to the stretching clamps until the medium film 3 is separated from the substrate 1, so that the interface bonding force of the medium film 3/the substrate 1 is obtained.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications can be made without departing from the scope of the invention.
Claims (10)
1. A sample for quantitatively analyzing the bonding force at a media film/substrate interface, comprising:
a substrate (1);
a dielectric film (3) disposed on the substrate (1);
the first metal circuit layer (2) is arranged between the substrate (1) and the dielectric film (3) and used for separating one end of the dielectric film (3) from the substrate (1);
and the second metal circuit layer (4) is arranged on one side, opposite to the first metal circuit layer (2), of the dielectric film (3), and the second metal circuit layer (4) is matched with the first metal circuit layer (2) to clamp one end of the dielectric film (3) so as to form a free end, to be clamped, of the dielectric film (3).
2. The test piece according to claim 1, wherein the dielectric film (3) overlaps the first metal wiring layer (2) in a direction in which the dielectric film (3) extends, and an end portion of the second metal wiring layer (4) is bent along the end portion of the dielectric film (3) and extends in a direction toward the first metal wiring layer (2) to abut against the first metal wiring layer (2).
3. A test piece according to claim 2, wherein the second metal wiring layer (4) covers the dielectric film (3) entirely.
4. A test sample according to any of claims 1-3, characterized in that the thickness of the dielectric film (3) is more than 1.5 times the thickness of the first metal wiring layer (2).
5. The sample according to claim 4, wherein the thickness of the first metal line layer (2) is 100-200 nm.
6. A test specimen according to claim 1 or 5, characterized in that the thickness of the second metal wiring layer (4) is greater than 20 μm.
7. The test piece according to claim 1, wherein the first metal line layer (2) and the second metal line layer (4) are both copper metal line layers or aluminum metal line layers.
8. The test specimen of claim 1, wherein the substrate (1) is one of a metal layer, a plastic encapsulation layer, a silicon oxide film, or an underfill.
9. The test piece according to claim 1, wherein the second metal wiring layer (4) is bent so that the free end of the dielectric film (3) to be clamped and the substrate (1) are perpendicular to each other.
10. A test coupon according to claim 1, further comprising a wafer (5), said substrate (1) being secured to said wafer (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922195747.8U CN211505161U (en) | 2019-12-03 | 2019-12-03 | Sample for quantitatively analyzing interface binding force of medium film/substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922195747.8U CN211505161U (en) | 2019-12-03 | 2019-12-03 | Sample for quantitatively analyzing interface binding force of medium film/substrate |
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| Publication Number | Publication Date |
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| CN211505161U true CN211505161U (en) | 2020-09-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113776934A (en) * | 2021-08-05 | 2021-12-10 | 长江存储科技有限责任公司 | Method for measuring bonding strength and sample |
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- 2019-12-03 CN CN201922195747.8U patent/CN211505161U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113776934A (en) * | 2021-08-05 | 2021-12-10 | 长江存储科技有限责任公司 | Method for measuring bonding strength and sample |
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