CN112179731B - Sample preparation method, stress detection method and sample to be detected - Google Patents
Sample preparation method, stress detection method and sample to be detected Download PDFInfo
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- CN112179731B CN112179731B CN202010980133.5A CN202010980133A CN112179731B CN 112179731 B CN112179731 B CN 112179731B CN 202010980133 A CN202010980133 A CN 202010980133A CN 112179731 B CN112179731 B CN 112179731B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/02—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/24—Investigating strength properties of solid materials by application of mechanical stress by applying steady shearing forces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/62—Manufacturing, calibrating, or repairing devices used in investigations covered by the preceding subgroups
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0014—Type of force applied
- G01N2203/0025—Shearing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/026—Specifications of the specimen
- G01N2203/0298—Manufacturing or preparing specimens
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Abstract
The embodiment of the application discloses a sample preparation method, which is applied to a stress detection experiment and comprises the following steps: providing a semiconductor structure, wherein the semiconductor structure comprises a substrate and a bonding interface positioned on one side of the substrate; connecting the semiconductor structure with a holding substrate to form a connecting structure; in the connecting structure, the substrate and the holding base are respectively positioned on two opposite sides of the bonding interface; acquiring at least one part of the connecting structure as a sample to be detected according to a preset size requirement; at least one part of the bonding interface is formed into a bonding interface to be detected in the sample to be detected; the method comprises the following steps that a to-be-detected sample is placed on a bonding interface to be detected, wherein a holding base part in the to-be-detected sample is used for bearing holding force in a stress detection experiment so as to prevent the to-be-detected sample from moving when the to-be-detected bonding interface bears test stress; the holding base portion is made of a metal material.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a sample preparation method, a stress detection method and a sample to be detected.
Background
In the three-dimensional chip (3D-IC) technology, various mechanical property evaluations of the bonding degree of the interface of bonded (bonded) wafers are required, which includes the research of the failure condition of the bonding interface under the action of shearing force. The traditional shear force experiments mainly comprise a single shear experiment, a double shear experiment, a punching shear experiment, a torsion experiment and the like; wherein, the single-shear experiment is more efficient and convenient due to simple sample preparation and short experiment time consumption.
However, in the technical field of semiconductor manufacturing, the conventional single shear test has the problems of low success rate of the test, difficult analysis after fracture and the like, and greatly influences the feasibility of evaluating the bonding degree of the bonding interface.
Disclosure of Invention
In view of the above, embodiments of the present application provide a sample preparation method, a stress detection method and a sample to be detected to solve at least one problem in the background art.
In order to achieve the purpose, the technical scheme of the application is realized as follows:
the embodiment of the application provides a sample preparation method, which is applied to a stress detection experiment and comprises the following steps:
providing a semiconductor structure, wherein the semiconductor structure comprises a substrate and a bonding interface positioned on one side of the substrate;
connecting the semiconductor structure with a holding substrate to form a connecting structure; in the connecting structure, the substrate and the holding base are respectively positioned on two opposite sides of the bonding interface;
acquiring at least one part of the connecting structure as a sample to be detected according to a preset size requirement; at least one part of the bonding interface is formed into a bonding interface to be detected in the sample to be detected;
the method comprises the following steps that a to-be-detected sample is placed on a bonding interface to be detected, wherein a holding base part in the to-be-detected sample is used for bearing holding force in a stress detection experiment so as to prevent the to-be-detected sample from moving when the to-be-detected bonding interface bears test stress;
the holding base portion is made of a metal material.
In the above aspect, the holding base portion is made of a nonmagnetic metal material.
In the above solution, in the stress detection experiment, the holding substrate portion is fixed by a sample-carrying substrate, and a material of the sample-carrying substrate includes a first metal;
the material of the holding base portion includes a second metal;
the second metal has a higher toughness than the first metal and the second metal has a lower ductility than the first metal.
In the above aspect, the material of the holding base portion includes titanium or a titanium alloy.
The embodiment of the application also provides a stress detection method, which comprises the following steps:
obtaining a sample to be detected, wherein the sample to be detected is prepared by adopting the sample preparation method in any one of the schemes;
fixing the holding base portion in the sample to be detected in a sample-carrying substrate so that the semiconductor structure portion in the sample to be detected is exposed to the surface of the sample-carrying substrate;
and applying a test stress to the exposed side surface of the semiconductor structure part to acquire the interface information of the bonding interface to be tested under the action of the test stress.
In the above-mentioned scheme, fixing the holding substrate portion of the sample to be detected in the sample-carrying substrate specifically includes:
the holding substrate portion was bonded in the sample-carrying substrate by hot melt adhesive.
In the above scheme, after obtaining the interface information of the bonding interface to be tested under the test stress, the method further includes:
and separating the sample to be detected from the sample carrying substrate by heating the hot melt adhesive.
The embodiment of the application further provides a to-be-detected sample, which is applied to a stress detection experiment, and comprises:
a semiconductor structure portion and a holding base portion connected to the semiconductor structure portion;
the semiconductor structure part comprises a sub-substrate and a bonding interface to be tested, wherein the bonding interface to be tested is positioned on one side of the sub-substrate; the sub-substrate and the holding substrate are respectively positioned at two opposite sides of the bonding interface to be tested;
the holding base part is used for bearing holding force in a stress detection experiment so as to prevent the sample to be detected from moving when the bonding interface to be detected bears test stress;
the holding base portion is made of a metal material.
In the above aspect, the holding base portion is made of a nonmagnetic metal material.
In the above solution, in the stress detection experiment, the holding substrate portion is fixed by a sample-carrying substrate, and a material of the sample-carrying substrate includes a first metal;
the material of the holding base portion includes a second metal;
the second metal has a higher toughness than the first metal and the second metal has a lower ductility than the first metal.
In the above aspect, the material of the holding base portion includes titanium or a titanium alloy.
According to the sample preparation method, the stress detection method and the sample to be detected, a semiconductor structure is provided, and the semiconductor structure comprises a substrate and a bonding interface positioned on one side of the substrate; connecting the semiconductor structure with a holding substrate to form a connecting structure; in the connecting structure, the substrate and the holding base are respectively positioned on two opposite sides of the bonding interface; acquiring at least one part of the connecting structure as a sample to be detected according to a preset size requirement; at least one part of the bonding interface is formed into a bonding interface to be detected in the sample to be detected; the method comprises the following steps that a to-be-detected sample is placed on a bonding interface to be detected, wherein a holding base part in the to-be-detected sample is used for bearing holding force in a stress detection experiment so as to prevent the to-be-detected sample from moving when the to-be-detected bonding interface bears test stress; the holding base portion is made of a metal material. Therefore, the base holding part in the sample to be detected is formed by the metal material, and the problem that the fracture always occurs on the base holding part in the stress detection experiment process is solved by utilizing the characteristic of strong toughness of the metal material, so that the experiment success rate is improved, the evaluation on the bonding degree of the bonding interface is favorably realized, and the evaluation accuracy is improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
Fig. 1 is a schematic flow chart of a sample preparation method provided in an embodiment of the present application;
fig. 2 is a schematic flowchart of a stress detection method according to an embodiment of the present disclosure;
FIGS. 3 to 6 are schematic cross-sectional views of main processes of an embodiment of the present application in a process of preparing a sample to be tested;
fig. 7 to fig. 10 are schematic cross-sectional views of main processes in a process of performing stress detection on a sample to be detected according to an embodiment of the present application.
Detailed Description
Exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art, that the present application may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present application; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "adjacent to … …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on … …," "directly adjacent to … …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application. And the discussion of a second element, component, region, layer or section does not imply that a first element, component, region, layer or section is necessarily present in the application.
Spatial relationship terms such as "under … …", "under … …", "below", "under … …", "above … …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In order to thoroughly understand the present application, detailed steps and detailed structures will be presented in the following description in order to explain the technical solution of the present application. The following detailed description of the preferred embodiments of the present application, however, will suggest that the present application may have other embodiments in addition to these detailed descriptions.
Currently, stress detection is performed on a bonding interface in a semiconductor structure, the semiconductor structure needs to be connected with a holding substrate, and the connected semiconductor structure and the holding substrate are prepared into a sample to be detected; in the process of a stress detection experiment, the sample to be detected is fixed through the holding substrate part in the sample to be detected so as to apply test stress on the semiconductor structure part, and therefore evaluation of the bonding degree of the bonding interface is achieved. In the semiconductor field, wafers are generally used as holding substrates, specifically, for example, silicon wafers; however, under the condition that the test stress is gradually increased, the wafer is very easy to crack, which causes disturbance to the acquisition of the interface information when the bonding interface is broken, so that the stress detection of the bonding interface cannot be accurately completed, and the detection experiment fails.
Therefore, the sample preparation condition is the key to the success of the experiment, and how to develop a new sample preparation method to improve the success rate of the stress detection experiment is very important.
Based on this, the embodiment of the application firstly provides a sample preparation method, which is applied to a stress detection experiment; fig. 1 is a schematic flow chart of a sample preparation method provided in an embodiment of the present application, and fig. 3 to 6 are schematic cross-sectional views of main processes in a process of preparing a sample to be detected in the embodiment of the present application. As shown in fig. 1, 3 to 6, the method includes the steps of:
This is explained in further detail below with reference to fig. 3. A semiconductor structure 300 is provided, the semiconductor structure 300 comprising a substrate 30 and a first film 31, a second film 32 and a third film 33 stacked in sequence along a direction perpendicular to the substrate 30. Here, the description is given only by taking an example in which three film layers are formed on a substrate, and it should be understood that the present application is not limited thereto, and one or more film layers may be formed on a substrate.
The material of the substrate 30 may include at least one elemental semiconductor material (e.g., a silicon (Si) substrate, a germanium (Ge) substrate), at least one III-V compound semiconductor material, at least one II-VI compound semiconductor material, at least one organic semiconductor material, or other semiconductor materials known in the art. At least one of the first, second, and third film layers 31, 32, and 33 may be a semiconductor material layer.
The bonding interface may be an interface between any adjacent two of the substrate 30, the first film layer 31, the second film layer 32, and the third film layer 33. The following description will take the interface between the first film layer 31 and the second film layer 32 in fig. 3 as the bonding interface as an example; after the bonding of the first film layer 31 and the second film layer 32 is completed, the structure shown in fig. 3 is obtained.
Here, the holding base 35 in fig. 4 may be referred to first.
In some embodiments, the retaining substrate is made of a metal material, that is, the entire retaining substrate is a metal substrate; such as a metal foil. In other embodiments, at least the portion of the retention base that is subsequently formed into the test sample to be tested is a metal material. In the selection of the material of the holding substrate, a non-magnetic metal, i.e., a metal having no magnetism, may be specifically selected to avoid affecting the performance of the stress detection experiment. In the stress test, the holding base portion is generally fixed by a sample-carrying substrate, and the material of the holding base may be selected from metallic materials having higher toughness than that of the material of the sample-carrying substrate and lower ductility than that of the material of the sample-carrying substrate.
In a specific embodiment, the material of the retaining substrate is selected from metallic materials having a toughness higher than that of the stainless steel material and a ductility lower than that of the stainless steel material.
In practice, the material of the retaining base comprises, for example, titanium or a titanium alloy.
Next, referring to fig. 5, the semiconductor structure 300 is connected to the holding substrate 35 to form a connection structure; in the connection structure, the substrate 30 and the holding base 35 are located on opposite sides of the bonding interface, respectively.
Here, the semiconductor structure 300 may be connected to the holding base 35 by turning the semiconductor structure 300 upside down, and facing the substrate 30 upwards, and facing a surface (e.g., a surface of the third film layer 33) of the semiconductor structure 300 away from the substrate 30 to the holding base 35.
The semiconductor structure 300 and the holding substrate 35 may be connected together through an adhesion layer 34, so as to facilitate subsequent transfer and fixation of the sample to be tested, and also facilitate subsequent application of a testing stress to the bonding interface to be tested. The material of the adhesion layer 34 is, for example, epoxy resin.
103, acquiring at least one part of the connecting structure as a sample to be detected according to a preset size requirement; at least one part of the bonding interface is formed into a bonding interface to be detected in the sample to be detected;
the method comprises the following steps that a to-be-detected sample is placed on a bonding interface to be detected, wherein a holding base part in the to-be-detected sample is used for bearing holding force in a stress detection experiment so as to prevent the to-be-detected sample from moving when the to-be-detected bonding interface bears test stress; the holding base portion is made of a metal material.
The preset size requirement may specifically be a size requirement of a stress detection experiment, for example, a sample-carrying substrate used in the stress detection experiment has a groove for fixing the sample to be detected, and the preset size requirement is determined according to a size of the groove, so that the sample to be detected can be fixed in the groove.
Referring to fig. 6, the first test specimen 361 shown in fig. 6 is at least a part of the connection structure shown in fig. 5, and the first test specimen 361 is described as an example. The test sample to be tested comprises a semiconductor structure portion 3001 and a holding substrate portion 351 connected with the semiconductor structure portion 3001; the semiconductor structure portion 3001 is at least a part of the semiconductor structure 300, and specifically includes a sub-substrate 301, and a first sub-film layer 311, a second sub-film layer 321, and a third sub-film layer 331 sequentially stacked along a direction perpendicular to the sub-substrate 301; at least one part of the bonding interface is formed into the bonding interface to be detected in the sample to be detected; the holding substrate portion 351 is at least a part of the holding substrate 35; the semiconductor structure portion 3001 and the holding substrate portion 351 are connected by a sub-adhesive layer 341, and the sub-adhesive layer 341 is at least a part of the adhesive layer 34. Therefore, in the sample to be detected, the sub-substrate 301 and the holding substrate portion 351 are located on opposite sides of the bonding interface to be detected, respectively.
In a specific embodiment, the test sample to be tested is formed by cutting the connecting structure in a direction perpendicular to the substrate 30. The specific method for cutting the connection structure in the direction perpendicular to the substrate 30 may be, but is not limited to, wire cutting, and those skilled in the art can select the method according to actual needs.
In addition, one or more samples to be detected can be obtained in the process of cutting the connecting structure; and in the case of obtaining a plurality of samples to be detected, the cutting may be equal cutting or unequal cutting, and a person skilled in the art may set the cutting according to actual needs, for example, according to the requirement of bonding interface detection. The size of each sample to be tested obtained by cutting may also be set by a person skilled in the art according to actual needs, for example, according to factors such as a range of test stress that can be applied by a stress applying device used in a subsequent stress detection experiment.
Fig. 7 shows the division of the entire connection structure into five test specimens 36 to be detected, namely a first test specimen 361, a second test specimen 362, a third test specimen 363, a fourth test specimen 364 and a fifth test specimen 365. The specific structure of each of the divided samples to be detected can refer to the first sample to be detected 361. The bonding interface between the first film layer 31 and the second film layer 32 is divided into 5 bonding interfaces to be tested.
The sample 36 to be detected is, for example, a rectangular parallelepiped; the cross section of the sample 36 to be detected is, for example, square in the direction parallel to the sub-substrate.
The connecting structure is cut to form a plurality of samples to be detected, and stress analysis can be selectively performed on one specific sample to be detected, a plurality of samples to be detected or all the samples to be detected subsequently, so that the bonding strength distribution condition of one specific region, a plurality of specific regions or the whole bonding interface of the semiconductor structure is determined.
Of course, the embodiment of the present application does not exclude the case where the connection structure itself meets the preset size requirement, so that the connection structure is used as the sample to be detected, that is, acquiring at least a portion of the connection structure as the sample to be detected includes acquiring not only a portion of the connection structure but also the whole connection structure.
It should be understood that the semiconductor construction portion in the test specimen to be tested is a specimen portion to be tested, and the holding base portion connected to the semiconductor construction portion is actually formed for the convenience of transferring and fixing the specimen portion. Specifically, the holding base part is used for bearing holding force in a stress detection experiment so as to prevent the to-be-detected sample from moving when the to-be-detected bonding interface bears test stress. In the embodiment of the present application, the holding base portion is made of a metal material; specifically, the material may be a non-magnetic metal material. If the material of the specimen mount substrate used in the subsequent stress detection experiment includes a first metal, the material of the holding substrate portion includes a second metal, and the second metal has a higher toughness than the first metal and has a lower ductility than the first metal. In a specific embodiment, the material of the loading substrate is stainless steel, and the material of the holding substrate portion is selected from a metal material having a toughness higher than that of the stainless steel material and a ductility lower than that of the stainless steel material.
In practice, the material of the retaining base portion comprises, for example, titanium or a titanium alloy.
In the embodiment of the present application, the holding substrate may be entirely made of a metal material, and the above-mentioned material is selected as required; the holding base may be formed of a metal material only for the holding base portion of the sample to be detected, and the material may be selected as required.
According to the embodiment of the application, the base holding part in the sample to be detected is formed by the metal material, and the problem that the fracture always occurs on the base holding part in the stress detection experiment process is solved by utilizing the characteristic of strong toughness of the metal material, so that the experiment success rate is improved, the evaluation on the bonding degree of the bonding interface is favorably realized, and the evaluation accuracy is improved.
The sample preparation method is applied to stress detection experiments. In a stress detection experiment, the bonding interface to be detected is subjected to a test stress, specifically, the test stress is applied to a side surface of the semiconductor structure portion so that the test stress acts on the bonding interface to be detected, and in the process, the holding base portion is subjected to a holding force so as to prevent the sample to be detected from moving; it will be appreciated that the holding force is in the opposite direction to the test stress, and in particular the Shear force (Shear force) test. Specifically, shearing is a relative dislocation deformation phenomenon of the cross section of a material along the action direction of a pair of closely-spaced, same-size and opposite-direction transverse external forces (namely, forces vertical to an action surface); forces that can cause shear deformation of a material are referred to as shear forces.
Fig. 2 is a schematic flow diagram of the stress detection method provided in the embodiment of the present application, and fig. 7 to 10 are schematic cross-sectional views of main processes in a process of performing stress detection on a sample to be detected in the embodiment of the present application. As shown in fig. 2, 7 to 10, the method comprises the following steps:
Here, the test samples to be detected may refer to the first test sample 361 in fig. 6, and may also refer to five test samples to be detected 36 in fig. 7, that is, the first test sample 361, the second test sample 362, the third test sample 363, the fourth test sample 364, and the fifth test sample 365.
As shown in fig. 8, providing a sample loading substrate 40, wherein the sample loading substrate 40 is made of, for example, stainless steel; the sample-carrying substrate 40 has a plurality of grooves for fixing the sample to be tested. The holding substrate portion 351 in the sample to be detected is fixed in the groove of the sample-carrying substrate 40 so that the semiconductor construction portion 3001 in the sample to be detected is exposed to the surface of the sample-carrying substrate 40. Optionally, the size of the sample to be detected is equal to or slightly smaller than the size of the groove.
It should be understood that the semiconductor structure in the sample to be tested is partially exposed on the surface of the sample-carrying substrate, including at least the bonding interface to be tested.
The step of fixing the holding substrate portion 351 of the sample to be detected 36 (specifically, refer to the first sample to be detected 361 in the figure) in the sample-loading substrate 40 may specifically include: the holding substrate portion 351 is bonded in the sample-carrying substrate 40 by a hot melt adhesive 37. In the actual process, the bottom of the cut retaining substrate of the sample to be detected is vertically planted in the sample carrying substrate with the groove by using hot melt adhesive.
In the embodiment including a plurality of test specimens 36 to be detected (specifically, refer to the first test specimen 361, the second test specimen 362, the third test specimen 363, the fourth test specimen 364 and the fifth test specimen 365 in the figure), a plurality of test specimens to be detected are fixed one by one in the plurality of grooves; and, specifically, may include: a plurality of the retaining substrates are bonded one to another in the plurality of grooves. In this embodiment, the obtained multiple samples to be detected can be simultaneously fixed in the sample loading substrate, so that a stress detection experiment can be simultaneously performed on the multiple samples to be detected, and thus, the bonding strengths of multiple positions in the bonding interface of the semiconductor structure can be contrastively analyzed, and the detection efficiency can be improved.
Here, it should be noted that in the related art, the holding base portion is generally bonded in the sample-carrying substrate using an epoxy resin, that is, the material selection of the adhesive between the holding base portion and the sample-carrying substrate and the adhesive layer between the semiconductor construct and the holding base is the same. However, when the base portion and the sample-carrying substrate are adhered and held by epoxy resin, the sample to be detected is difficult to remove from the groove of the sample-carrying substrate, which makes post-fracture analysis difficult; in addition, the sample-carrying substrate is difficult to clean after the experiment is finished, and the adhesive remains, which causes trouble to the reuse of the sample-carrying substrate. And in this application embodiment, cooperate with the base portion that keeps, the adhesive that keeps between base portion and the year appearance base plate adopts the hot melt adhesive, conveniently treats taking out of detection sample to carry the appearance base plate to clear up easily after the experiment.
Fig. 8 only shows the situation that the hot melt adhesive 37 is located on the lower surface of the holding substrate portion 351, that is, only on the bottom wall of the groove, however, in practical application, the hot melt adhesive 37 may be coated on the entire inner wall of the groove, that is, the hot melt adhesive 37 is located between all the contact portions of the holding substrate portion 351 and the sample loading substrate 40, so as to further avoid the shaking of the sample to be detected in the process of applying the test stress, and ensure the smooth performance of the stress detection experiment.
The specific steps of obtaining the interface information of the bonding interface to be tested under the action of the test stress comprise: and sequentially applying a plurality of gradually-increased test stresses to the side surface of the exposed semiconductor structure part until the bonding interface to be tested fails, and taking the corresponding test stress when the bonding interface to be tested fails as a target stress.
In the embodiment that the sample to be detected comprises a plurality of samples to be detected, a plurality of target test stresses corresponding to a plurality of bonding interfaces to be detected one by one are respectively obtained; and acquiring the bonding strength of a plurality of regions in the bonding interface according to the target testing stresses.
The direction of the arrows in fig. 9 indicate the direction of the test stress applied. Specifically, a plurality of test stress values may be preset, or an increasing step length of the test stress may be preset, and the test stress values are sequentially applied to the side surface of the semiconductor structure portion from small to large until the bonding interface to be tested fails. In the embodiment of the present application, the failure of the bonding interface to be detected means that the first sub-film layer 311 is separated from the second sub-film layer 321, as shown in the fifth test sample 365 shown in fig. 10.
After obtaining the interface information of the bonding interface to be tested under the test stress, the method may further include: and separating the sample to be detected from the sample carrying substrate by heating the hot melt adhesive.
Further, the method may further include: cleaning the sample loading substrate; specifically, the sample-carrying substrate is soaked with acetone, washed with water, and dried.
In addition, an embodiment of the present application further provides a test sample to be detected, which is applied to a stress detection experiment, and specifically refer to fig. 6, where the test sample to be detected includes:
a semiconductor construction portion 3001 and a holding base portion 351 connected to the semiconductor construction portion 3001;
the semiconductor structure portion 3001 comprises a sub-substrate 301 and a bonding interface to be tested positioned at one side of the sub-substrate 301; the sub-substrate 301 and the holding substrate part 351 are respectively positioned at two opposite sides of the bonding interface to be tested;
the holding base portion 351 is used for bearing holding force in a stress detection experiment so as to prevent the sample to be detected from moving when the bonding interface to be detected bears test stress;
the holding base portion is made of a metal material.
Specifically, the holding base portion may be a nonmagnetic metal material. In the stress detection experiment, the holding substrate part is fixed through a sample carrying substrate, and the material of the sample carrying substrate comprises a first metal; the material of the holding base portion includes a second metal; the second metal has a higher toughness than the first metal and the second metal has a lower ductility than the first metal.
In a specific embodiment, the material of the retaining substrate portion is selected from a metallic material having a toughness higher than that of the stainless steel material and a ductility lower than that of the stainless steel material.
In practice, the material of the retaining base portion comprises titanium or a titanium alloy.
The sample to be detected that this embodiment provided keeps the base portion to be the metal material, utilizes the strong characteristic of metal material toughness, has solved the problem that the fracture always takes place in keeping the base portion among the stress detection experimentation to improve the experiment success rate, be favorable to realizing the aassessment to bonding interface bonding degree, and improved the accuracy of aassessment.
It should be noted that the sample to be detected, the sample preparation method and the stress detection method provided by the present application belong to the same concept; the technical features of the technical means described in the embodiments may be arbitrarily combined without conflict.
The above description is only exemplary of the present application and should not be taken as limiting the scope of the present application, as any modifications, equivalents, improvements, etc. made within the spirit and principle of the present application should be included in the scope of the present application.
Claims (11)
1. A sample preparation method is applied to a stress detection experiment and is characterized by comprising the following steps:
providing a semiconductor structure, wherein the semiconductor structure comprises a substrate and a bonding interface positioned on one side of the substrate;
connecting the semiconductor structure with a holding substrate to form a connecting structure; in the connecting structure, the substrate and the holding base are respectively positioned on two opposite sides of the bonding interface;
acquiring at least one part of the connecting structure as a sample to be detected according to a preset size requirement; at least one part of the bonding interface is formed into a bonding interface to be detected in the sample to be detected;
the method comprises the following steps that a to-be-detected sample is placed on a bonding interface to be detected, wherein a holding base part in the to-be-detected sample is used for bearing holding force in a stress detection experiment so as to prevent the to-be-detected sample from moving when the to-be-detected bonding interface bears test stress;
the holding base portion is made of a metal material.
2. The sample preparation method according to claim 1, wherein the holding base portion is made of a nonmagnetic metal material.
3. A sample preparation method as claimed in claim 1, wherein the holding substrate portion is fixed by a sample-carrying substrate in the stress detection experiment, the material of the sample-carrying substrate including the first metal;
the material of the holding base portion includes a second metal;
the second metal has a higher toughness than the first metal and the second metal has a lower ductility than the first metal.
4. A method as claimed in claim 1, in which the material of the retaining substrate portion comprises titanium or a titanium alloy.
5. A method of stress detection, the method comprising:
obtaining a sample to be detected, wherein the sample to be detected is prepared by the sample preparation method according to any one of claims 1 to 4;
fixing the holding base portion in the sample to be detected in a sample-carrying substrate so that the semiconductor structure portion in the sample to be detected is exposed to the surface of the sample-carrying substrate;
and applying a test stress to the exposed side surface of the semiconductor structure part to acquire the interface information of the bonding interface to be tested under the action of the test stress.
6. The method according to claim 5, characterized in that fixing the holding substrate part of the sample to be tested in a sample-carrying substrate comprises in particular:
the holding substrate portion was bonded in the sample-carrying substrate by hot melt adhesive.
7. The method of claim 6, wherein after obtaining the interface information of the bonding interface under test under the test stress, the method further comprises:
and separating the sample to be detected from the sample carrying substrate by heating the hot melt adhesive.
8. The utility model provides a treat test sample, be applied to stress detection experiment which characterized in that includes:
a semiconductor structure portion and a holding base portion connected to the semiconductor structure portion;
the semiconductor structure part comprises a sub-substrate and a bonding interface to be tested, wherein the bonding interface to be tested is positioned on one side of the sub-substrate; the sub-substrate and the holding substrate are respectively positioned at two opposite sides of the bonding interface to be tested;
the holding base part is used for bearing holding force in a stress detection experiment so as to prevent the sample to be detected from moving when the bonding interface to be detected bears test stress;
the holding base portion is made of a metal material.
9. The test sample to be tested according to claim 8, wherein the holding base portion is made of a non-magnetic metal material.
10. The test specimen to be detected as set forth in claim 8, wherein the holding substrate portion is fixed by a sample carrying substrate in the stress detection experiment, and the material of the sample carrying substrate includes a first metal;
the material of the holding base portion includes a second metal;
the second metal has a higher toughness than the first metal and the second metal has a lower ductility than the first metal.
11. Test specimen to be tested according to claim 8, characterized in that the material of the holding substrate part comprises titanium or a titanium alloy.
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