CN210722963U - Wafer wet processing device - Google Patents
Wafer wet processing device Download PDFInfo
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- CN210722963U CN210722963U CN201922078432.5U CN201922078432U CN210722963U CN 210722963 U CN210722963 U CN 210722963U CN 201922078432 U CN201922078432 U CN 201922078432U CN 210722963 U CN210722963 U CN 210722963U
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Abstract
The utility model provides a wafer wet processing device, include: the closed process chamber is provided with an openable closed structure, and a solution tank is arranged in the closed process chamber and used for processing the wafer to be processed, wherein the wafer to be processed is provided with tiny processing lines or deep and narrow holes; the vacuum system is used for regulating and maintaining the pressure in the process chamber; the temperature control system heats the solution tank and controls the temperature; and the transmission system is used for transmitting the wafer to be processed. Through the arrangement of the vacuum system, negative pressure is formed in the vacuumizing process to suck out gas in tiny processing lines or deep and narrow holes on the wafer to be processed, and positive pressure is formed in the vacuum breaking process to enable solution to be poured into the tiny processing lines or the deep and narrow holes, so that the tiny processing lines or the deep and narrow holes on the wafer to be processed are cleaned or corroded, the cleaning cleanliness of the wafer is greatly improved, or the corrosion size of the wafer is greatly reduced.
Description
Technical Field
The utility model relates to a semiconductor manufacturing field especially relates to a wafer wet processing device.
Background
Modern chips of advanced materials (wafers), such as precision optics, micro-triggers, micro-sensors and micro-electro-mechanical devices, are prepared under very clean conditions without any contamination on the chip, and chips (e.g. silicon) used on large scale integrated circuits in the electronics industry require less than l μ g/cm of contaminants2. The circuit of large scale integrated circuit chip has reached 20-30 layers of chip with silicon as substrate, its line width is 200-70 nm, even reaches 7 nm. In the process of developing these special chips, there are dozens of processes including oxidation, masking, epitaxy, diffusion, wiring, ion implantation, plasma etching, photolithography, etc., and each process almost has a cleaning process, so the cleaning process plays a very important role in the whole large scale integrated circuit production, and occupies about 1/3 processes of the whole manufacturing process, but the conventional cleaning process cannot effectively remove the contamination of the chip because of the rugged circuit prepared on the chip surface or the tunnel cavity. In addition, the etching process is almost used in the process of preparing the special chips, and for the etching of some deep holes, the etching solution is difficult to enter the holes due to too small diameter of the deep holes, so that the etching effect is poor, and the product yield is influenced.
Therefore, it is necessary to design a wafer wet processing apparatus, which can effectively remove the contaminants in the fine and small processing lines or rough surface micro-holes of the wafer or improve the corrosion effect of the fine and small processing lines or surface micro-holes of the wafer.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a wafer wet processing apparatus for solving the problems that the conventional cleaning process cannot effectively remove the contamination of the chip, and the conventional etching process cannot achieve the desired etching effect, etc. in the prior art.
To achieve the above and other related objects, the present invention provides a wafer wet processing apparatus, which at least comprises:
the closed process chamber is provided with an openable and closable closed structure, and is internally provided with a solution tank, the solution tank is used for processing a wafer to be processed, and the wafer to be processed is provided with tiny processing lines or deep and narrow holes;
the vacuum system is used for regulating and maintaining the pressure in the process chamber and creating a solution negative pressure reflux condition for the wafer to be processed;
a temperature control system for heating the solution tank and controlling the temperature;
and the transmission system is used for transmitting the wafer to be processed.
Optionally, the solution tank comprises a water bath or a high temperature non-volatile solution bath.
Optionally, the vacuum system includes a vacuum pump, a vacuum gauge, a vacuum degree display instrument, an air pressure control device, and a vacuum breaking device, wherein the vacuum gauge is disposed in the process chamber and monitors a pressure of the process chamber, the vacuum degree display instrument displays data measured by the vacuum gauge, the air pressure control device controls the pressure in the process chamber, and the vacuum breaking device is configured to increase the pressure in the process chamber.
Optionally, the vacuum system further includes a gas flow device for introducing gas into the process chamber and controlling the flow of the introduced gas, and the gas pressure control device is an automatic gas pressure control device.
Further, the gas flow device comprises a gas flow meter and a ventilation device connected with the gas flow meter.
Furthermore, the vacuum breaking device is a vacuum return pipe which can be opened and closed and is arranged on the process chamber.
Further, the temperature control system comprises a temperature measuring probe, a temperature control device, a temperature display device and a heating device, wherein the temperature measuring probe is arranged in the solution tank and monitors the temperature of the solution in the solution tank, the temperature control device collects data measured by the temperature measuring probe and feeds the data back to the heating device so as to control the heating temperature of the heating device to meet the process requirement, and the heating device heats the solution tank.
Optionally, the conveying system includes a robot arm, a wafer to be processed chuck support, and a cylinder transmission device, wherein the robot arm is configured to grab and convey the wafer to be processed, and the wafer to be processed chuck support is configured to carry the wafer to be processed.
Further, the transfer system is disposed within the process chamber.
Furthermore, the wafer wet processing device further comprises a product chamber used for containing the wafer to be processed, and the product chamber is arranged in the process chamber.
As above, the utility model discloses a wafer processing apparatus is through setting up vacuum system, form the gas suction in the negative pressure is with tiny processing lines or the deep and narrow hole on the pending wafer in its evacuation in-process to form the malleation and make the solution in the solution tank pour into tiny processing lines or the deep and narrow hole in breaking vacuum in-process, thereby realize the washing or the corruption of tiny processing lines or the deep and narrow hole on the pending wafer, improved the abluent cleanliness factor of wafer or greatly reduced the size that the wafer corrodes greatly.
Drawings
Fig. 1 is a functional block diagram of a wafer wet processing apparatus according to the present invention.
Fig. 2 is a functional block diagram illustrating a vacuum system of the wafer wet processing apparatus and a connection relationship between the vacuum system and the process chamber according to the present invention.
Fig. 3 is a functional block diagram illustrating a temperature control system of a wafer wet processing apparatus and a connection relationship between the temperature control system and a process chamber according to the present invention.
Fig. 4 is a schematic diagram of a wafer wet processing apparatus according to an embodiment of the present invention.
Description of the element reference numerals
1 Process Chamber
10 closed structure
11 solution tank
2 vacuum system
20 vacuum pump
21 vacuum gauge
22 vacuum degree display instrument
23 air pressure control device
24 vacuum breaking device
25 vacuum return pipe
3 temperature control system
30 temperature measuring probe
31 temperature control device
32 temperature display device
33 heating device
4 transmission system
40 mechanical arm
41 wafer chuck plug support to be processed
42 cylinder transmission device
5 gas flow device
50 gas flowmeter
51 ventilating device
6 product chamber
7 wafer to be processed
Detailed Description
The following description is provided for illustrative purposes, and other advantages and features of the present invention will become apparent to those skilled in the art from the following detailed description.
Please refer to fig. 1 to 4. It should be understood that the structure, ratio, size and the like shown in the drawings attached to the present specification are only used for matching with the content disclosed in the specification, so as to be known and read by those skilled in the art, and are not used for limiting the limit conditions that the present invention can be implemented, so that the present invention has no technical essential meaning, and any structure modification, ratio relationship change or size adjustment should still fall within the scope that the technical content disclosed in the present invention can cover without affecting the function that the present invention can produce and the purpose that the present invention can achieve. Meanwhile, the terms such as "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for convenience of description, and are not intended to limit the scope of the present invention, and changes or adjustments of the relative relationship thereof may be made without substantial technical changes, and the present invention is also regarded as the scope of the present invention.
As shown in fig. 1, the utility model provides a wafer wet processing device, wafer wet processing device includes at least:
the closed process chamber 1 is provided with an openable closed structure 10, and a solution tank 11 is arranged in the closed process chamber, wherein the solution tank 11 is used for processing a wafer to be processed, and the wafer to be processed is provided with a tiny processing line or a deep and narrow hole;
the vacuum system 2 is used for regulating and maintaining the pressure in the process chamber 1 and creating a solution negative pressure reflux condition for the wafer to be processed;
a temperature control system 3 for heating the solution tank 11 and controlling the temperature;
and the transmission system 4 is used for transmitting the wafer to be processed.
It should be noted that the sealing structure 10 may be any structure that can be opened and closed, as long as the sealing structure can enable wafers to be processed to be input into or output from the process chamber 1 when the sealing structure is opened, and can keep the process chamber 1 sealed when the sealing structure is closed, for example, the sealing structure may be configured as an openable window structure or an openable door structure, and the like, and is not limited herein.
By way of example, the solution tank 11 may be selected as any bath suitable for wet processing, for example, when a water bath process is required for a wafer to be processed, the solution tank 11 may be selected as a water bath, and when a chemical solution process is required for a wafer to be processed, the solution tank 11 may be selected as a high-temperature nonvolatile solution bath or other solution tank suitable for wet processing, and the type of the solution tank 11 may be selected according to different wet processing processes without limitation.
As an example, the transfer system 4 is arranged within the process chamber 1. Preferably, the wafer wet processing apparatus further includes a product chamber 6 for accommodating a wafer to be processed, and the product chamber 6 is also disposed in the process chamber 1. The transmission system 4 and the product chamber 6 are both arranged in the process chamber 1, so that the wet processing time of the wafer wet processing device can be further shortened, and the working efficiency of the device can be improved.
The utility model discloses a wafer wet processing device's working process does:
when the product chamber 6 is disposed outside the process chamber 1, the sealing structure 10 is opened, the conveying system 4 grabs the wafer to be processed from the product chamber 6 and transfers the wafer to be processed into the process chamber 1, and preferably transfers the wafer to be processed to the upper side of the solution tank 11, and when the product chamber 6 is disposed inside the process chamber 1, the conveying system 4 grabs the wafer to be processed from the product chamber 6 and preferably transfers the wafer to be processed to the upper side of the solution tank 11;
the vacuum system 2 is used for vacuumizing the process chamber 1, so that the pressure in the process chamber 1 is regulated and controlled within the range of process requirements and kept for a preset time, a negative pressure condition is created for the wafer to be processed, and gas in a tiny processing line or deep and narrow holes on the wafer to be processed is sucked out;
the temperature control system 3 heats the solution in the solution tank 11 and controls the temperature of the solution to keep the temperature of the solution at a preset temperature, the conveying system 4 places the wafer to be processed into the solution tank 11, and the vacuum system opens the process chamber 1 by introducing air, nitrogen or other suitable gas to increase the pressure in the process chamber 1, so that the solution in the solution tank 11 is poured into the wafer to be processed, including the fine processing lines or deep and narrow holes on the wafer to be processed, and the cleaning or corrosion of the fine processing lines or deep and narrow holes on the wafer to be processed is completed;
the conveying system 4 takes out the cleaned or etched wafer to be processed from the solution tank 11 and conveys the wafer to the next process.
The utility model discloses a wafer processing apparatus is through setting up vacuum system, form the gas suction in the negative pressure is on pending wafer tiny processing lines or dark and narrow hole at its evacuation in-process, and form the malleation in broken vacuum process and make the solution in the solution groove pour backward into tiny processing lines or dark and narrow hole, thereby realize treating the washing or the corruption of tiny processing lines or dark and narrow hole on the wafer, wafer abluent cleanliness factor or greatly reduced the size of wafer corruption has been improved greatly.
As shown in fig. 2, as an example, the vacuum system 2 includes a vacuum pump 20, a vacuum gauge 21, a vacuum degree display instrument 22, an air pressure control device 23, and a vacuum breaking device 24, wherein the vacuum gauge 21 is disposed in the process chamber 1 and monitors the pressure of the process chamber 1, the vacuum degree display instrument 22 displays data measured by the vacuum gauge 21, the air pressure control device 23 controls the pressure in the process chamber 1, and the vacuum breaking device 24 is configured to increase the pressure in the process chamber 1.
The working process of the vacuum system 2 is that, when vacuum pumping is required, the vacuum pump 20 performs vacuum pumping on the process chamber 1, the vacuum gauge 21 monitors the pressure in the process chamber 1 in real time and displays the pressure on the vacuum degree display instrument 22, the air pressure control device 23 adjusts the vacuum pumping condition of the vacuum pump 20 according to the pressure displayed on the vacuum degree display instrument 22 and the preset pressure therein, until the pressure in the process chamber 1 reaches the preset pressure, the vacuum pump 20 stops vacuum pumping, and when vacuum breaking is required, the vacuum breaking device 24 is opened, and appropriate gas is introduced into the process chamber 1, so that the pressure in the process chamber 1 is increased.
Preferably, the air pressure control device 23 is an automatic air pressure control device (APC for short), and the vacuum system 2 further includes an air flow device 5 for introducing air into the process chamber 1 and controlling the flow of the introduced air. Because the automatic air pressure control device controls the vacuumizing speed through the opening of the butterfly valve, the pressure in the process chamber is not easy to control, and the air flow device and the automatic air pressure control device are arranged to cooperatively control the pressure in the process chamber, so that the pressure in the process chamber can be further accurately controlled. More preferably, the gas flow device 5 comprises a gas flow meter 50 and a ventilation device 51 connected to the gas flow meter 50.
As shown in fig. 3, the temperature control system 3 includes, as an example, a temperature probe 30, a temperature control device 31, a temperature display device 32, and a heating device 33, wherein the temperature probe 30 is disposed inside the solution tank 11 and monitors the temperature of the solution in the solution tank 11, the temperature control device 31 collects data measured by the temperature probe 30 and feeds the data back to the heating device 33 to control the heating temperature of the heating device 33 to meet the process requirement, and the heating device 33 heats the solution tank 11. Preferably, the temperature display device 32 and the vacuum indicator 22 may be integrated into one display device.
As shown in fig. 4, the working process of the present invention is described below with reference to a specific embodiment:
opening the closed structure 10, operating the cylinder transmission device 42 of the transmission system 4 to move the mechanical arm 40 of the transmission system 4 into the product chamber 6 and grab the wafer 7 to be processed and place the wafer 7 on the wafer chuck support 41 of the transmission system 4, and transferring the wafer 7 to be processed into the process chamber 1, and preferably transferring the wafer 7 to be processed to the position above the solution tank 11 for standing;
the vacuum system 2 is used for vacuumizing the process chamber 1, so that the pressure in the process chamber 1 is regulated and controlled within the range of process requirements and kept for a preset time, a negative pressure condition is created for the wafer to be processed, and gas in a tiny processing line or deep and narrow holes on the wafer to be processed is sucked out;
the heating device 33 of the temperature control system 3 heats the solution in the solution tank 11 and controls the temperature of the solution to maintain the temperature of the solution at a preset temperature, the robot 40 places the wafer 7 to be processed into the solution tank 11, opens the vacuum breaking device 24 in the vacuum system 2, in this embodiment, the vacuum breaking device 24 is an openable and closable vacuum return pipe 25, and is disposed on the process chamber 1, air, nitrogen or other suitable gas is introduced into the process chamber 1 through the vacuum return pipe 25 to break vacuum, so that the pressure in the process chamber 1 is increased, the solution in the solution tank 11 is poured into the wafer 7 to be processed, including pouring into the fine processing lines or deep and narrow holes on the wafer 7 to be processed, thereby completing the cleaning or corrosion of the tiny processing lines or deep and narrow holes on the wafer 7 to be processed;
the transfer robot 40 takes out the cleaned or etched wafer 7 to be processed from the solution tank 11 and transfers the wafer to the next process.
To sum up, the utility model discloses a wafer processing apparatus forms the gas suction in the negative pressure is in tiny processing lines or the dark just narrow hole on with pending wafer through setting up vacuum system in its evacuation in-process to in broken vacuum process formation malleation makes the solution in the solution tank flow backward into tiny processing lines or dark just narrow hole, thereby realize the washing or the corruption of tiny processing lines or dark just narrow hole on the pending wafer, improved the abluent cleanliness factor of wafer or greatly reduced the size that the wafer corrodes greatly. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A wafer wet processing device is characterized by at least comprising:
the closed process chamber is provided with an openable and closable closed structure, and is internally provided with a solution tank, the solution tank is used for processing a wafer to be processed, and the wafer to be processed is provided with tiny processing lines or deep and narrow holes;
the vacuum system is used for regulating and maintaining the pressure in the process chamber and creating a solution negative pressure reflux condition for the wafer to be processed;
a temperature control system for heating the solution tank and controlling the temperature;
and the transmission system is used for transmitting the wafer to be processed.
2. The wafer wet processing apparatus according to claim 1, wherein: the solution tank comprises a water bath or a high-temperature non-volatile solution bath.
3. The wafer wet processing apparatus according to claim 1, wherein: the vacuum system comprises a vacuum pump, a vacuum gauge, a vacuum degree display instrument, an air pressure control device and a vacuum breaking device, wherein the vacuum gauge is arranged in the process chamber and used for monitoring the pressure of the process chamber, the vacuum degree display instrument is used for displaying data measured by the vacuum gauge, the air pressure control device is used for controlling the pressure in the process chamber, and the vacuum breaking device is used for improving the pressure in the process chamber.
4. The wafer wet processing apparatus according to claim 3, wherein: the vacuum system also comprises a gas flow device which is used for introducing gas into the process chamber and controlling the flow of the introduced gas, and the gas pressure control device is an automatic gas pressure control device.
5. The wafer wet processing apparatus according to claim 4, wherein: the gas flow device comprises a gas flow meter and a ventilation device connected with the gas flow meter.
6. The wafer wet processing apparatus according to claim 4, wherein: the vacuum breaking device is a vacuum return pipe capable of being opened and closed and is arranged on the process chamber.
7. The wafer wet processing apparatus according to claim 4, wherein: the temperature control system comprises a temperature measuring probe, a temperature control device, a temperature display device and a heating device, wherein the temperature measuring probe is arranged in the solution tank and monitors the temperature of the solution in the solution tank, the temperature control device collects data measured by the temperature measuring probe and feeds the data back to the heating device so as to control the heating temperature of the heating device to meet the process requirement, and the heating device heats the solution tank.
8. The wafer wet processing apparatus according to claim 1, wherein: the transmission system comprises a mechanical arm, a to-be-processed wafer chuck support and a cylinder transmission device, wherein the mechanical arm is used for grabbing and transmitting the to-be-processed wafer, and the to-be-processed wafer chuck support is used for bearing the to-be-processed wafer.
9. The wafer wet processing apparatus according to claim 8, wherein: the transmission system is arranged in the process chamber.
10. The wafer wet processing apparatus according to claim 9, wherein: the wafer wet processing device further comprises a product chamber used for containing the wafer to be processed, and the product chamber is arranged in the process chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922078432.5U CN210722963U (en) | 2019-11-27 | 2019-11-27 | Wafer wet processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922078432.5U CN210722963U (en) | 2019-11-27 | 2019-11-27 | Wafer wet processing device |
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| CN210722963U true CN210722963U (en) | 2020-06-09 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113789562A (en) * | 2021-10-21 | 2021-12-14 | 新阳硅密（上海）半导体技术有限公司 | Wafer electroplating pretreatment equipment, system and method |
| CN113915971A (en) * | 2021-12-09 | 2022-01-11 | 中国华能集团清洁能源技术研究院有限公司 | Vacuum flash evaporation system and vacuum flash evaporation method |
| CN117524944A (en) * | 2024-01-04 | 2024-02-06 | 盛奕半导体科技(无锡)有限公司 | Multi-chamber independent pressure control device for semiconductor wet process |
-
2019
- 2019-11-27 CN CN201922078432.5U patent/CN210722963U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113789562A (en) * | 2021-10-21 | 2021-12-14 | 新阳硅密（上海）半导体技术有限公司 | Wafer electroplating pretreatment equipment, system and method |
| CN113915971A (en) * | 2021-12-09 | 2022-01-11 | 中国华能集团清洁能源技术研究院有限公司 | Vacuum flash evaporation system and vacuum flash evaporation method |
| CN117524944A (en) * | 2024-01-04 | 2024-02-06 | 盛奕半导体科技(无锡)有限公司 | Multi-chamber independent pressure control device for semiconductor wet process |
| CN117524944B (en) * | 2024-01-04 | 2024-03-12 | 盛奕半导体科技(无锡)有限公司 | Multi-chamber independent pressure control device for semiconductor wet process |
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