CN210639269U - 一种mems磁传感器的电连接结构及mems磁传感器 - Google Patents
一种mems磁传感器的电连接结构及mems磁传感器 Download PDFInfo
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Effective date of registration: 20200814 Address after: 261031 building 10, Geer phase II Industrial Park, No. 102, Ronghua Road, Ronghua community, Xincheng street, high tech Zone, Weifang City, Shandong Province Co-patentee after: Qingdao Research Institute of Beijing University of Aeronautics and Astronautics Patentee after: Weifang goer Microelectronics Co.,Ltd. Address before: 266104 Laoshan Qingdao District North House Street investment service center room, Room 308, Shandong Co-patentee before: Qingdao Research Institute of Beijing University of Aeronautics and Astronautics Patentee before: GOERTEK TECHNOLOGY Co.,Ltd. |