CN210442536U - Athermal arrayed waveguide grating - Google Patents

Athermal arrayed waveguide grating Download PDF

Info

Publication number
CN210442536U
CN210442536U CN201921427329.0U CN201921427329U CN210442536U CN 210442536 U CN210442536 U CN 210442536U CN 201921427329 U CN201921427329 U CN 201921427329U CN 210442536 U CN210442536 U CN 210442536U
Authority
CN
China
Prior art keywords
waveguide
core layer
arrayed waveguide
silicon
grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201921427329.0U
Other languages
Chinese (zh)
Inventor
陈亦凡
郑睿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Yirui Optoelectronics Technology Co ltd
Yirui Optoelectronic Technology Anhui Co ltd
Original Assignee
Suzhou Yirui Optoelectronics Technology Co ltd
Yirui Optoelectronic Technology Anhui Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Yirui Optoelectronics Technology Co ltd, Yirui Optoelectronic Technology Anhui Co ltd filed Critical Suzhou Yirui Optoelectronics Technology Co ltd
Priority to CN201921427329.0U priority Critical patent/CN210442536U/en
Application granted granted Critical
Publication of CN210442536U publication Critical patent/CN210442536U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Optical Integrated Circuits (AREA)

Abstract

The utility model discloses a heatless arrayed waveguide grating, which comprises a silicon-based substrate and a heatless arrayed waveguide arranged on the silicon-based substrate, wherein the heatless arrayed waveguide grating specifically comprises a cladding and a waveguide core layer, the core layer is arranged in the cladding, and the refractive index of the core layer is higher than that of the cladding; the waveguide core layer includes a periodically disposed multilayer structure including: the silicon dioxide material comprises double layers of silicon dioxide materials and negative temperature coefficient materials arranged between the double layers of silicon dioxide materials; the negative temperature coefficient material is used for compensating the size deformation of the silicon-based substrate after being heated so as to reduce the temperature drift coefficient of the athermal arrayed waveguide grating. The technical scheme of the utility model the waveguide core layer structure of traditional athermal array waveguide grating has been simplified, introduces negative temperature coefficient material in core layer structure, makes the final refracting index temperature coefficient of waveguide structure be the negative number, finally guarantees that the temperature drift coefficient of this grating satisfies the technology demand to realize no fever type operating condition.

Description

Athermal arrayed waveguide grating
Technical Field
The utility model relates to a planar optical waveguide device, which belongs to a heatless array waveguide grating.
Background
The arrayed waveguide grating is an angular dispersion passive device, is based on a planar optical waveguide technology, is originally proposed by Smit in the last 80 th century, is paid attention to various research institutions such as Bell research institution and NTT (non-transparent technology) and the like, and is gradually commercialized along with the development of the planar optical waveguide technology. Compared with other wavelength division multiplexing devices, the arrayed waveguide grating has the advantages of flexible design, low insertion loss, good filtering property, long-term stability, easiness in optical fiber coupling and the like. In addition, the arrayed waveguide grating is easy to combine with active devices such as an optical amplifier, a semiconductor laser and the like, monolithic integration is realized, and the arrayed waveguide grating is a research hotspot at present.
The correlation characteristic exists between the central wavelength of the arrayed waveguide grating and the ambient temperature, and the main principle is explained as follows:
Figure BDA0002185422170000011
the above formula is the central wavelength expression of the arrayed waveguide grating, where neffIs the effective refractive index of the waveguide, Δ L is the difference in the geometric length of adjacent waveguides, and m is the number of diffraction orders, determining the grating dispersion capability. n iseffAnd al can both be described by a temperature dependent function. The variation of the center wavelength of the device with temperature can be obtained by deriving the temperature by the above formula, and the final expression is as follows:
Figure BDA0002185422170000012
and wherein
Figure BDA0002185422170000013
αsubIs the linear expansion coefficient of the substrate material of the arrayed waveguide grating. Silicon-based substratesAn arrayed waveguide grating of silica structure, the silica waveguide thickness is much less than that of a silicon-based substrate, and the dimensional deformation caused by temperature change is mainly determined by the substrate material αsub≈2.6x10-6The optical waveguide is a conventional silica waveguide,
Figure BDA0002185422170000014
neffthe temperature drift coefficient of the central wavelength is calculated to be 0.012nm/deg after being integrated and calculated as 1.456.
In order to keep the central wavelength of the arrayed waveguide grating constant under different environmental temperatures and reduce the temperature drift coefficient of the central wavelength, the conventional technique is to attach a temperature control device, such as a heater or an electro-refrigerator, to stabilize the operating temperature of the AWG, which requires additional power input, and the use of active temperature control is limited in the operating environment with large temperature difference. Conventional athermal techniques require the introduction of additional mechanical structures to the grating to achieve the wavelength-temperature drift compensation function, and such techniques themselves require relatively complex structural designs and processing methods.
Therefore, in view of the above problems, there is a need for an athermal arrayed waveguide grating with a simple structure.
SUMMERY OF THE UTILITY MODEL
In order to solve the above technical problem, an object of the present invention is to provide an athermal arrayed waveguide grating with a negative temperature characteristic waveguide structure, which utilizes the negative temperature variation characteristic of a special design to realize an athermal operating mode of a device
In order to achieve the above purpose, the utility model provides a following technical scheme:
an athermal arrayed waveguide grating comprises a silicon-based substrate; and disposed over the silicon-based substrate:
at least one input waveguide into which an optical signal is input;
a first free transmission region formed by a first slab waveguide, coupled to the output end of the input waveguide;
an athermal arrayed waveguide coupled to an output of the first free transmission region;
a second free transmission region formed by a second slab waveguide, coupled to the output end of the waveguide array;
at least one output waveguide outputting an optical signal, coupled to an output of the second free transmission region;
the athermal array waveguide comprises a cladding and a waveguide core layer, wherein the core layer is arranged in the cladding, and the refractive index of the core layer is higher than that of the cladding;
the waveguide core layer includes a periodically arranged multilayer structure, the multilayer structure including: the double-layer silicon dioxide material and the negative temperature coefficient material are arranged between the double-layer silicon dioxide materials; the negative temperature coefficient material is used for compensating the size deformation of the silicon-based substrate after being heated so as to reduce the temperature drift coefficient of the athermal arrayed waveguide grating.
Further, the negative temperature coefficient material is titanium dioxide.
Furthermore, in the multilayer structure, the thickness of the silicon dioxide material is 0.5-1 μm, and the thickness of the titanium dioxide material is 0.05-0.1 μm.
Further, the effective refractive index of the multilayer structure is 1.5 to 1.6.
Furthermore, the effective refractive index temperature coefficient of the multilayer structure is-2 e-6 to-4 e-6/k.
Further, the thickness of the negative temperature coefficient material is related to the optimal effective refractive index of the waveguide core layer.
Further, the thickness of the negative temperature coefficient material is related to the optimal temperature coefficient of refractive index of the waveguide core layer.
The beneficial effects of the utility model reside in that:
the technical scheme of the utility model overcome the complicated problem of no fever type array waveguide grating project organization, do not need additional extra structural design and assembly process, simplified no fever type array waveguide grating structure, introduce negative temperature coefficient material in sandwich layer structure, make grating itself have no heat characteristic, finally guarantee that the temperature of this grating floats the coefficient and satisfies the process demand to realize no fever type operating condition.
The above description is only an overview of the technical solution of the present invention, and in order to make the technical means of the present invention clearer and can be implemented according to the content of the description, the following detailed description is made with reference to the preferred embodiments of the present invention and accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of an athermal arrayed waveguide core layer according to the first embodiment, in which 10-multiple layers, 11-silica material, 12-negative temperature coefficient material, and 30-silica cladding are used.
Fig. 2 is a schematic structural diagram of an athermal arrayed waveguide grating according to a second embodiment, in which 101-input waveguides, 102-output waveguides, 103-first free transmission regions, 104-second free transmission regions, 105-athermal arrayed waveguides, and 140-silicon-based substrates.
Detailed Description
The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
Example one
Referring to fig. 1, an athermal arrayed waveguide includes silica cladding layers 30 and a waveguide core layer disposed between the silica cladding layers 30, the waveguide core layer includes a periodically disposed multilayer structure 10, and the multilayer structure 10 includes: a double-layer silicon dioxide material 11 and a negative temperature coefficient material 12 arranged between the double-layer silicon dioxide material 11; the negative temperature coefficient material 12 is used to compensate the dimensional deformation of the silicon-based substrate 140 (see fig. 2) after being heated, so as to reduce the temperature drift coefficient of the athermal arrayed waveguide grating.
In the above embodiment, the refractive index of the core layer is higher than that of the cladding layer 30.
In the above embodiment, the negative temperature coefficient material 12 is titanium dioxide.
In the above embodiment, the thickness of the silicon dioxide material 11 is 0.5-1 μm, and the thickness of the titanium dioxide material 12 is 0.05-0.1 μm in the multi-layer structure 10. The thickness of the negative temperature coefficient material 12 is related to the optimal effective refractive index and the optimal effective refractive index temperature coefficient of the waveguide core layer. For example, when the thickness of the silica material 11 is 1 μm, the thickness of the titania waveguide 12 is 0.1 μm, and the thickness of the multilayer structure 10 is 4.2 μm; the silica material 11 has an effective refractive index of 1.476 and an effective temperature coefficient of refractive index of 7.6 e-6/k; the effective refractive index of the titanium dioxide waveguide 12 is 2.614, and the temperature coefficient of the effective refractive index is-1.2 e-4/k; the resulting multilayer structure 10 had an effective refractive index of 1.5795 and an effective temperature coefficient of refractive index of-4 e-6/k.
In other embodiments, the effective refractive index of the multilayer structure 10 is 1.5 to 1.6.
In other embodiments, the effective temperature coefficient of refractive index of the waveguide core layer is between-2 e-6 and-4 e-6/K.
In the embodiment shown in fig. 1, two periods of the multi-layer structure 10 are shown, but the number and thickness of the multi-layer structure 10 in the present invention are not limited thereto.
Example two
Referring to fig. 2, the present invention further provides a athermal arrayed waveguide grating device, which includes a silicon-based substrate 140, and disposed on the silicon-based substrate 140:
an input waveguide 101 for inputting an optical signal;
a first free transmission region 103 formed by a first slab waveguide, coupled to an output end of the input waveguide 101;
the athermal arrayed waveguide 105 of the first embodiment of the present invention is coupled to the output end of the first free transmission region 103;
a second free transmission region 104 formed by a second slab waveguide, coupled to the output end of the waveguide array 105;
at least one output waveguide 102, outputting an optical signal, is coupled to an output of the second free transmission region 104.
Based on the grating device with the waveguide structure, the central wavelength temperature drift coefficient is calculated to be-0.0014 nm/deg, and the central wavelength temperature drift coefficient of the array waveguide grating with the silica-on-silicon structure is calculated to be 0.012nm/deg after comprehensive calculation, which is reduced by one order of magnitude compared with the grating device with the waveguide structure.
The utility model discloses an improve the structural design of waveguide, make grating device itself have negative temperature characteristic to offset the influence that silicon-based material coefficient of thermal expansion caused in the grating device, reduce the holistic temperature coefficient of drifting of array waveguide grating device by a wide margin, improved the device performance.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims (5)

1. An athermal arrayed waveguide grating comprises a silicon-based substrate; characterized in that it further comprises, disposed on the silicon-based substrate:
at least one input waveguide into which an optical signal is input;
a first free transmission region formed by a first slab waveguide coupled to an output end of the input waveguide;
an athermal arrayed waveguide coupled to an output of the first free transmission region;
a second free transmission region formed by a second slab waveguide and coupled with the output end of the athermal arrayed waveguide;
at least one output waveguide outputting an optical signal, coupled to an output of the second free transmission region;
the athermal array waveguide comprises a cladding layer and a waveguide core layer, wherein the core layer is arranged in the cladding layer, and the refractive index of the core layer is higher than that of the cladding layer;
the waveguide core layer includes a periodically disposed multilayer structure including: the silicon dioxide material comprises double layers of silicon dioxide materials and negative temperature coefficient materials arranged between the double layers of silicon dioxide materials; the negative temperature coefficient material is used for compensating the size deformation of the silicon-based substrate after being heated so as to reduce the temperature drift coefficient of the athermal arrayed waveguide grating.
2. The athermal arrayed waveguide grating of claim 1, wherein the negative temperature coefficient material is titanium dioxide.
3. The athermal arrayed waveguide grating of claim 1, wherein the thickness of the silica material is 0.5-1 μm and the thickness of the titania material is 0.05-0.1 μm in the multilayer structure.
4. The athermal arrayed waveguide grating of claim 1, wherein the multilayer structure has an effective refractive index of 1.5-1.6.
5. The athermal arrayed waveguide grating of claim 1, wherein the effective temperature coefficient of refractive index of the multilayer structure is in the range of-2 e-6 to-4 e-6/k.
CN201921427329.0U 2019-08-30 2019-08-30 Athermal arrayed waveguide grating Active CN210442536U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201921427329.0U CN210442536U (en) 2019-08-30 2019-08-30 Athermal arrayed waveguide grating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921427329.0U CN210442536U (en) 2019-08-30 2019-08-30 Athermal arrayed waveguide grating

Publications (1)

Publication Number Publication Date
CN210442536U true CN210442536U (en) 2020-05-01

Family

ID=70409939

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201921427329.0U Active CN210442536U (en) 2019-08-30 2019-08-30 Athermal arrayed waveguide grating

Country Status (1)

Country Link
CN (1) CN210442536U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110376677A (en) * 2019-08-30 2019-10-25 易锐光电科技(安徽)有限公司 A kind of non-heat array wave guide grating

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110376677A (en) * 2019-08-30 2019-10-25 易锐光电科技(安徽)有限公司 A kind of non-heat array wave guide grating
WO2021036009A1 (en) * 2019-08-30 2021-03-04 苏州易锐光电科技有限公司 Athermal arrayed waveguide grating
US11796736B2 (en) 2019-08-30 2023-10-24 Irixi Photonics (Suzhou) Co., Ltd. Athermal arrayed waveguide grating

Similar Documents

Publication Publication Date Title
US11796736B2 (en) Athermal arrayed waveguide grating
JP5457661B2 (en) Optical wavelength multiplexing / demultiplexing circuit
US5930439A (en) Planar optical waveguide
Ohkawa et al. Integrated optic pressure sensor on silicon substrate
DE69938132D1 (en) Athermal waveguide grating multiplexer (AWG) with polymer segment, as well as corresponding manufacturing process
JP2007271704A (en) Variable light control device and variable light control method
Fu et al. Ultra-small Si-nanowire-based 400 GHz-spacing 15× 15 arrayed-waveguide grating router with microbends
JP4221364B2 (en) Thermal compensation of waveguides with a dual material core.
CN210442536U (en) Athermal arrayed waveguide grating
JPH10160954A (en) Optical waveguide having nonlinear thin film
CN107490821B (en) Optical waveguide device insensitive to broadband temperature
US20050157973A1 (en) Packaging for planar lightwave circuits
CN102103229B (en) Array waveguide grating insensitive to temperature and polarization
CN112068244B (en) Athermal arrayed waveguide grating
CN112162350A (en) Temperature-insensitive silicon-based arrayed waveguide grating structure wavelength division multiplexer
CN202057829U (en) Array waveguide grating insensitive to temperature and polarization
TW588167B (en) Polarization-insensitive planar lightwave circuits and method for fabricating the same
WO2022012434A1 (en) High-density integrated optical waveguide
Wang et al. Athermal silicon arrayed waveguide grating with polymer-filled slot structure
CN112946817B (en) Mode order converter based on sub-wavelength structure
Winnie et al. Polymer-cladded athermal high-index-contrast waveguides
Winnie et al. Thermo-optical compensation in high-index-contrast waveguides
JP4569440B2 (en) Temperature independent optical multiplexer / demultiplexer
Sahu Thermo-optic two-mode interference optical waveguide device with fast response time
CA2492893C (en) Packaging for planar lightwave circuits

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant