CN107490821B - Optical waveguide device insensitive to broadband temperature - Google Patents
Optical waveguide device insensitive to broadband temperature Download PDFInfo
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- CN107490821B CN107490821B CN201610412018.1A CN201610412018A CN107490821B CN 107490821 B CN107490821 B CN 107490821B CN 201610412018 A CN201610412018 A CN 201610412018A CN 107490821 B CN107490821 B CN 107490821B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
- G02B6/12026—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
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Abstract
The invention discloses an optical waveguide device insensitive to broadband temperature, which comprises a core region and a cladding layer, wherein the core region and the cladding layer are mutually laminated, the core region adopts silicon, the cladding layer adopts titanium dioxide, the other surface of the cladding layer is provided with the cladding layer, the cladding layer adopts a material with positive thermo-optic coefficient, the light intensity limiting factor of each layer of structure in the optical waveguide is influenced by wavelength, after the wavelength is increased, the evanescent field of light transmitted in the optical waveguide is increased, and correspondingly, the light intensity limiting factor in the cladding layer is also increased; therefore, corresponding to different wavelengths, the light intensity limiting factor of each layer changes, and as the wavelength increases, the total thermo-optic coefficient of the optical waveguide does not change along with the temperature monotonously any more, and becomes a curve which changes like a parabola, so that the temperature insensitivity in a wide wavelength range can be realized.
Description
Technical Field
The invention relates to the field of silicon-based optical waveguides, in particular to a novel wide-wavelength-range temperature-insensitive optical waveguide device.
Background
Because of the higher thermo-optic property of silicon materials, the micro resonant cavity based on the silicon waveguide on the SOI insulator influences the resonance property due to the change of the refractive index of the materials caused by high temperature when in work, so as to cause the shift of the resonance wavelength, a plurality of methods are provided at home and abroad for realizing temperature insensitivity, the active method is mainly divided into active and passive, and the active method is realized by adding a feedback type thermoelectric temperature control system[1]The method generates extra power consumption and is not beneficial to silicon-based integration; the passive method comprises the following steps: a method for reducing temperature sensitivity by using a Mach-Zehnder interferometer was proposed in 2010 by Guha et al[2]The thermal compensation is realized by coupling, and the method has larger size and reduces the original integration level of the optical waveguide; temperature insensitivity was also achieved by adding a negative thermal temperature coefficient cladding material, first proposed by Kobukun et al in 1998[3]The polymer PMMA with negative thermal temperature coefficient compensates the thermal light coefficient of the silicon material, but the CMOS compatibility can not be realized in consideration of the mechanochemical instability of the polymer material; the titanium dioxide material also has a negative thermo-optic coefficient and can therefore also be used to achieve temperature insensitivity[4]Compared with polymer, the titanium dioxide material has mechanical stability and can be compatible with COMS.
The existing temperature-insensitive optical waveguide is designed according to the size of a single wavelength, and the design has the defect that the existing temperature-insensitive optical waveguide cannot be utilized in the design of devices (such as silicon-based wavelength division multiplexing micro-ring resonant cavities and other structures) which need to realize resonant wavelength which is not easy to be subjected to temperature change in a wide wavelength range.
[ reference documents ]
[1]K Padmaraju，J Chan et al.Thermal stabilization of a microringmodulator using feedback control[J].Optics Express,2012,20(27):27999-8008。
[2]B Guha,M Lipson et al.CMOS-compatible athermal silicon microringresonators[J].Optics Express,2010,18(4):3487-93。
[3]Y.Kokubun,S.Yoneda,and S.Matsuura,Temperature-independent opticalfilter at 1.55μm wavelength using a silica-based athermal waveguide[J],Electron.Lett.34(4),367–369(1998)。
[4]SS Djordjevic,K Shang,B Guan et al.CMOS-compatible,athermalsilicon ring modulators clad with titanium dioxide[J].Optics Express,2013,21(12):13958-13968。
Disclosure of Invention
Aiming at solving the characteristic that the existing optical waveguide is sensitive to the temperature in a wide wavelength range, the existing optical waveguide design method for realizing single-wavelength temperature insensitivity by using superposed titanium dioxide as a cladding material[4]The invention provides an optical waveguide device insensitive to broadband temperature, which realizes insensitivity of effective refractive index and resonant wavelength of broadband optical waveguide along with temperature change by a method of superposing a layer of positive thermo-optic coefficient material.
In order to solve the technical problem, the optical waveguide device insensitive to broadband temperature provided by the invention comprises a core region and a cladding layer which are mutually laminated, wherein the core region is made of silicon, the cladding layer is made of titanium dioxide, the other surface of the cladding layer is provided with a covering layer, the covering layer is made of a material with a positive thermo-optic coefficient, and the expression of the thermo-optic coefficient of the whole optical waveguide is as follows:
equation (1) to the right: coefficient of the first term Γc(lambda) is the light intensity limiting factor of the core material,
is the thermo-optic coefficient of silicon; coefficient of the second term Γcl1(lambda) is the light intensity limiting factor of the cladding material,
is the thermo-optic coefficient of titanium dioxide; coefficient of the third term Γcl2(lambda) is the light intensity limiting factor of the cover material,
is the thermo-optic coefficient of the cover material; the light intensity limiting factor of the material of the core region, the material of the cladding layer and the material of the covering layer in the optical waveguide is in direct proportion to the ratio of the light intensity of the material in the region to the total light intensity of the optical waveguide: the light intensity limiting factor for each material is: the ratio of the area integral of the square of the electric field intensity in each region of the core, cladding and cladding to the square of the total electric field in the cross section of the optical waveguide is rA：
ΓA＝∫∫A|E|2dxdy/∫∫∞|E|2dxdy (2)
In the formula (2), E is the electric field intensity, and A is the indicated region.
The covering layer adopts a positive thermo-optic coefficient material selected from any one of silicon nitride, silicon dioxide, silicon and aluminum nitride.
The thermo-optic coefficient of the silicon is 1.86 x 10-4K-1The thermo-optic coefficient of titanium dioxide is-1.0X 10-4K-1The thermo-optic coefficient of silicon nitride is 4.0X 10-5K-1The thermo-optic coefficient of silica is 1X 10-5K-1The thermo-optic coefficient of aluminum nitride is 6X 10-5K-1。
Aiming at the problems that the covering layer is made of silicon nitride materials, the height of the silicon nitride is 500nm, the width of the optical waveguide is 500nm, the height of the core region is 140nm, and the height of the covering layer is 136 nm.
Aiming at the problems that the covering layer is made of silicon nitride material, the height of the silicon nitride is 500nm, the width of the optical waveguide is 500nm, the height of the core region is 150nm, and the height of the covering layer is 160 nm.
Aiming at the problems that the covering layer is made of silicon nitride materials, the height of the silicon nitride is 500nm, the width of the optical waveguide is 500nm, the height of the core region is 160nm, and the height of the covering layer is 190 nm.
Compared with the prior art, the invention has the beneficial effects that:
(1) by adding a positive thermo-optic coefficient material-SiN on the basis of the original optical waveguide design, the fact that the effective refractive index is insensitive along with temperature within a certain wavelength range can be achieved, finite element software is used for simulation calculation, the combination of the height of a titanium dioxide layer and the height of silicon nitride required for achieving single-wavelength temperature sensitivity at the position of 1550nm of a single wavelength is calculated, then the wavelength range from 1450nm to 2000nm is scanned on the basis of the height, and the change curve of the effective refractive index along with the wavelength is obtained and is similar to a parabola.
(2) The calculation formula of the resonance wavelength along with the temperature offset obtained according to the change of the effective refractive index is as follows:
the change coefficient of the resonance wavelength along with the temperature can be obtained by the change of the effective refractive index along with the temperature obtained by the previous step, and the insensitivity of the effective refractive index along with the temperature change is realized in a wide wavelength range, so that the resonance peak is also insensitivity along with the temperature change in a wide wavelength range, which has an extremely important significance for designing a micro resonant cavity filter.
Drawings
FIG. 1 is a schematic cross-sectional view of a broadband temperature insensitive optical waveguide device of the present invention;
FIG. 2 is a graph of the thermo-optic coefficient of the optical waveguide according to the height of the titanium dioxide layer in example 1 of the present invention;
FIG. 3 is a graph of the thermo-optic coefficient of the optical waveguide according to the height of the titanium dioxide layer in example 2 of the present invention;
FIG. 4 is a graph of the thermo-optic coefficient of the optical waveguide according to the height of the titanium dioxide layer in example 3 of the present invention;
FIG. 5 is a graph of the thermo-optic coefficient of the optical waveguide as a function of wavelength obtained by COMSOL scanning over the wavelength range 1450 to 2000nm for examples 1-3.
Detailed Description
The technical solutions of the present invention are further described in detail with reference to the accompanying drawings and specific embodiments, which are only illustrative of the present invention and are not intended to limit the present invention.
The main design idea of the optical waveguide device insensitive to broadband temperature is as follows: on the basis that a layer of titanium dioxide material with a negative thermo-optic coefficient is superposed on a silicon waveguide to serve as a cladding, temperature insensitivity in a wide wavelength range is realized by superposing a layer of material with a positive thermo-optic coefficient.
The invention provides a broadband temperature insensitive optical waveguide device, which comprises a core region and a cladding layer which are mutually laminated, wherein the core region adopts silicon, the cladding layer adopts titanium dioxide, the other surface of the cladding layer is provided with the cladding layer, and the cross section of the optical waveguide device is schematically illustrated in figure 1. The covering layer is made of a positive thermo-optic coefficient material, and the positive thermo-optic coefficient material can be selected from any one of silicon nitride, silicon dioxide, silicon and aluminum nitride. The thermo-optic coefficient of the silicon is 1.86 x 10-4K-1The thermo-optic coefficient of titanium dioxide is-1.0X 10-4K-1The thermo-optic coefficient of silicon nitride is 4.0X 10-5K-1The thermo-optic coefficient of silica is 1X 10-5K-1The thermo-optic coefficient of aluminum nitride is 6X 10-5K-1。
The thermo-optic coefficient expression of the whole optical waveguide is:
equation (1) to the right:
coefficient of the first term Γc(lambda) is the light intensity limiting factor of the core material,
is the thermo-optic coefficient of silicon; coefficient of the second term Γcl1(lambda) is the light intensity limiting factor of the cladding material,
is the thermo-optic coefficient of titanium dioxide; coefficient of the third term Γcl2(lambda) is the light intensity limiting factor of the material taking the positive thermo-optic coefficient material as the covering layer added on the basis of the traditional realization of the single-wavelength temperature-insensitive optical waveguide,
is the thermo-optic coefficient of the cover material; the light intensity limiting factor of the material of the core region, the material of the cladding layer and the material of the covering layer in the optical waveguide is in direct proportion to the ratio of the light intensity of the material in the region to the total light intensity of the optical waveguide: the light intensity limiting factor for each material is: the ratio of the area integral of the square of the electric field intensity in each region of the core, cladding and cladding to the square of the total electric field in the cross section of the optical waveguide is rA：
ΓA＝∫∫A|E|2dxdy/∫∫∞|E|2dxdy (2)
In formula (2), E is the electric field intensity, and A is the region referred to, such as the core, cladding or cladding.
The light intensity limiting factor of each layer (namely the core region, the cladding layer and the covering layer) structure in the optical waveguide is influenced by the wavelength, after the wavelength is increased, an evanescent field transmitted by light in the optical waveguide is increased, and correspondingly, the light intensity limiting factor in the cladding layer is also increased; therefore, corresponding to different wavelengths, the light intensity limiting factor of each layer will change, in other words, under the condition of only titanium dioxide cladding and silicon core region, the temperature insensitivity under one wavelength can only be realized by one optical waveguide size design, and the total thermo-optic coefficient of the optical waveguide is not changed along with the temperature monotony any more and is changed into a curve similar to the change of a parabola along with the increase of the wavelength by adding a layer of positive thermo-optic coefficient material on the titanium dioxide material, therefore, the optical waveguide device designed by the invention can realize the temperature insensitivity in a wide wavelength range.
In order to determine the cross-sectional dimension of the optical waveguide device insensitive to broadband temperature, taking the covering layer as silicon nitride as an example, the following simulation is carried out by using finite element analysis software COMSOL:
first, the total thermo-optic coefficient of the optical waveguide was simulated by using the finite element analysis software COMSOL, using the formula (1), wherein the thermo-optic coefficient of titanium dioxide is 1 × 10-4K-1The thermo-optic coefficient of silicon is 1.86X 10-4K-1The silicon nitride material has a thermo-optic coefficient of 4 x 10-5K-1Setting the covering layer to be a silicon nitride material, setting the height of the silicon nitride to be 500nm, the wavelength to be 1550nm and the width of the optical waveguide to be 500nm, respectively taking the heights of the core regions to be 140nm, 150nm and 160nm, then scanning the heights of the titanium dioxide layer to be respectively 136nm, 160nm and 190nm, thereby obtaining a variation curve of the thermo-optic coefficient of the optical waveguide with the height of the titanium dioxide layer under each silicon height, fig. 2 shows a variation curve of the thermo-optic coefficient of the optical waveguide with the core region height of 140nm with the height of the titanium dioxide layer, fig. 3 shows a variation curve of the thermo-optic coefficient of the optical waveguide with the core region height of 150nm with the height of the titanium dioxide layer, and fig. 4 shows a variation curve of the thermo-optic coefficient of the optical waveguide with the core region height of 160nm with the height.
Then, using COMSOL to scan the wavelength range of 1450-2000 nm to obtain the optical waveguide with the thermo-optic coefficient similar to the parabolic change along with the wavelength change, as shown in FIG. 5, the optical waveguide designed by the invention can realize the temperature insensitivity in the wide wavelength range.
It can be seen from the result of the scanning wavelength (solid curve) in fig. 5 that the smaller the height of the titanium dioxide and the silicon in the optical waveguide of the present invention is, the flatter the thermo-optic coefficient of the obtained optical waveguide is along with the change of the wavelength, because the longer the wavelength is and the larger the evanescent field is by reducing the height of the titanium dioxide and the silicon, the more light is in the covering layer portion composed of the positive thermo-optic coefficient material (silicon nitride), and the flatter the thermo-optic coefficient of the optical waveguide along with the change of the wavelength, that is, the optical waveguide designed by the present invention realizes the insensitivity of the effective refractive index and the resonance wavelength of the broadband optical waveguide along with.
While the present invention has been described with reference to the accompanying drawings, the present invention is not limited to the above-described embodiments, which are illustrative only and not restrictive, and various modifications which do not depart from the spirit of the present invention and which are intended to be covered by the claims of the present invention may be made by those skilled in the art.
Claims (2)
1. A broadband temperature insensitive optical waveguide device comprises a core region and a cladding layer which are mutually laminated, wherein the core region adopts silicon, and the cladding layer adopts titanium dioxide; the other side of the cladding is provided with a covering layer, the covering layer is made of a positive thermo-optic coefficient material, and the thermo-optic coefficient expression of the whole optical waveguide is as follows:
equation (1) to the right:
coefficient of the first term
Is the light intensity limiting factor of the core material,
is the thermo-optic coefficient of silicon;
coefficient of the second term
Is the light intensity limiting factor of the cladding material,
is the thermo-optic coefficient of titanium dioxide;
coefficient of the third term
Is the light intensity limiting factor of the cover material,
is the thermo-optic coefficient of the cover material;
the light intensity limiting factors of the core region material, the cladding material and the covering layer material in the optical waveguide refer to: the ratio of the area integral of the square of the electric field intensity in each region of the core, cladding and cladding to the square of the total electric field in the cross section of the optical waveguide
：
In the formula (2), E is the electric field intensity, and A is the indicated region;
the method is characterized in that:
aiming at the situation that the covering layer is made of silicon nitride material, the height of the silicon nitride is 500nm, the width of the optical waveguide is 500nm, and the heights of the core layer and the covering layer are one of the following situations:
the height of the core is 140nm, and the height of the cladding is 136 nm;
the height of the core region is 150nm, and the height of the cladding layer is 160 nm;
the height of the core is 160nm and the height of the cladding is 190 nm.
2. The broadband temperature insensitive optical waveguide device of claim 1 wherein the silicon has a thermo-optic coefficient of
Titanium dioxideHas a thermo-optic coefficient of
Silicon nitride having a thermo-optic coefficient of
。
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| CN110389406B (en) * | 2018-04-17 | 2020-10-27 | 华为技术有限公司 | Waveguide assembly, unequal-arm Mach-Zehnder interferometer and parameter determination method |
| CN109507490B (en) * | 2018-11-23 | 2020-10-16 | 清华大学 | Common-path interference electric field sensor with stable temperature of static working point |
| CN112162350A (en) * | 2020-10-12 | 2021-01-01 | 上海航天科工电器研究院有限公司 | Temperature-insensitive silicon-based arrayed waveguide grating structure wavelength division multiplexer |
| CN116045954B (en) * | 2023-03-31 | 2023-06-09 | 中国船舶集团有限公司第七〇七研究所 | Hybrid resonant cavity for optical gyro and optical gyro |
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