CN209981227U - Homogeneous crystalline silicon double-sided solar cell structure without shielding of heavily doped layer in light inlet region - Google Patents
Homogeneous crystalline silicon double-sided solar cell structure without shielding of heavily doped layer in light inlet region Download PDFInfo
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- CN209981227U CN209981227U CN201820330969.9U CN201820330969U CN209981227U CN 209981227 U CN209981227 U CN 209981227U CN 201820330969 U CN201820330969 U CN 201820330969U CN 209981227 U CN209981227 U CN 209981227U
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- crystalline silicon
- solar cell
- heavily doped
- layer
- light inlet
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 3
- 238000002161 passivation Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
A homogeneous crystalline silicon double-sided solar cell structure without being shielded by a heavily doped layer in a light inlet region takes an n-type crystalline silicon wafer as a substrate, and an emitter surface is divided into an emitter-conductive region and a passivation-light inlet region: the former consists of a heavily doped p-type crystalline silicon emitter layer and a metal grid line I in sequence from a substrate to the outside, and the latter consists of a passivated antireflection layer I; the back electric field surface is divided into a passivation-light inlet area and a back electric field-conductive area: the heavily doped n-type crystalline silicon layer II and the passivated antireflection layer II are sequentially arranged on the substrate from the bottom to the outside; the heavily doped n-type crystal silicon layer II and the metal grid line II are sequentially arranged from the substrate to the outside. The utility model discloses keeping crystalline silicon solar cell two-sided entering under the prerequisite of light characteristic, obtained higher open circuit voltage and short-circuit current, furthest's improvement crystalline silicon solar cell's generating capacity.
Description
Technical Field
The utility model belongs to solar cell field and semiconductor device field. Relates to a preparation technology of a solar cell.
Background
For a double-sided crystalline silicon solar cell, a PERT structure has been focused on in the solar cell industry because of high efficiency due to good compatibility with the existing crystalline silicon production line for diffusion junction manufacturing. However, the development of solar cells with this structure is currently suffering from bottlenecks, and one of the keys lies in the performance of the emitter layer formed by boron diffusion and the preparation technology thereof. The boron doping concentration must be high in order to achieve a higher open circuit voltage, but this will lead to an increase in carrier recombination. Moreover, the low sheet resistance required for the lateral transmission loss of carriers in the boron doped layer is contradictory to the technical improvement direction of increasing the boron doping concentration (the increase of the concentration causes the reduction of the carrier mobility and the increase of the recombination rate) required for achieving the condition.
How to solve this conflict is crucial to the development of the PERT technology, and we consider that starting from the design of the device structure may be an effective breakthrough. The present invention is an attempt in this direction.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a go into two-sided solar cell structure of homojunction crystalline silicon that light zone does not have heavily doped layer to shelter from.
The utility model discloses a realize through following technical scheme.
Advance two-sided solar cell structure of homojunction crystalline silicon that light area does not have heavily doped layer and shelters from to n type crystalline silicon piece (4) are as the basement, its emitter face divide into the projecting pole-electrically conducts regional and passivation-advances the light area: the emitter-conductive region is composed of a heavily doped p-type crystalline silicon emitter layer (2) and a metal grid line I (1) from a substrate to the outside in sequence, and the passivation-light inlet region is composed of a passivation antireflection layer I (3). The two regions are distributed across and do not overlap.
A advance two-sided solar cell structure of homojunction crystalline silicon that light region does not have heavily doped layer to shelter from, for two-sided light solar cell that advances, its positive and negative electrode is located two surfaces of n type crystal silicon piece (4) basement respectively, advances light solar cell for two-sided. The solar cell has another surface (back electric field surface) structure outside the emitter surface: the method is divided into a passivation-light entering area and a back electric field-conductive area: the passivation-light inlet region is sequentially provided with a heavily doped n-type crystalline silicon layer II (5) and a passivation antireflection layer II (6) from the substrate to the outside; the back electric field-conductive region is sequentially provided with a heavily doped n-type crystal silicon layer II (5) and a metal grid line II (7) from the substrate to the outside. The two regions are distributed across and do not overlap.
Further, for the performance that improves the device, n type crystal silicon piece (4) can two-sided system fine hair to further improve solar cell short circuit current.
Furthermore, the texturing conditions of the two sides of the n-type crystal silicon wafer (4) can be different, one side of the n-type crystal silicon wafer adopts a textured surface with a pyramid structure with a smaller size, and the other side of the n-type crystal silicon wafer adopts a pyramid textured surface with a larger size or a polishing structure without pyramids.
Furthermore, the area with the metal grid lines (metal grid line I and metal grid line II) can be polished or textured with pyramids with larger sizes so as to reduce recombination loss and improve the open-circuit voltage of the solar cell.
Further, the total coverage area ratio of the metal grid lines (metal grid lines I and metal grid lines II) on the surface of the device is preferably 1 ~ 3%, so as to improve the short-circuit current of the solar cell and ensure good enough conductivity.
Further, the passivated antireflection layer I (3) and the passivated antireflection layer II (6) are preferably a composite film structure of silicon dioxide and silicon nitride prepared by a thermal oxidation method.
The technical effects of the utility model are that: the utility model is suitable for a monocrystalline silicon piece solar cell, polycrystalline silicon piece solar cell and accurate monocrystalline silicon piece solar cell. On the premise of keeping the double-sided light inlet characteristics of the crystalline silicon solar cell, higher open-circuit voltage and short-circuit current are obtained, and the power generation capacity of the crystalline silicon solar cell is improved to the greatest extent. The mechanism is that high open-circuit voltage is obtained through the p-type heavily doped crystalline silicon emitter and a matched structure under the coverage area of the metal grid line, and the structure can only consider the electrical performance of the emitter and does not need to balance the degree of light absorption loss like an emitter layer in a PERT structure; compared with a structure that a PERT full-surface heavily-doped p-type layer is combined with a passivation layer, the structure that the surface antireflection passivation layer is adopted at the position without the metal grid line can reduce the reduction of short-circuit current and open-circuit voltage caused by serious recombination loss in the transmission process of carriers in the p-type layer. On the emitter surface, the generated photoproduction holes intensively flow to the emitter region, so that a high-current effect similar to a concentrating solar cell is formed, the built-in potential of the solar cell can be further improved, and the voltage of the solar cell is further improved; the generated electrons only flow to the metal electrode on the other side of the silicon chip to be collected because the heavily doped n-type region of the emitter surface has no electrode.
Drawings
Fig. 1 is a schematic structural diagram of the present invention. Wherein: 1 is a metal grid line I; 2 is a heavily doped p-type crystalline silicon emitter layer; 3 is a passivated antireflection layer I; 4 is an n-type crystal silicon wafer; 5 is a heavily doped n-type crystalline silicon layer; 6 is a passivated antireflection layer II; and 7, a metal grid line II.
Detailed Description
The present invention will be further illustrated by the following examples.
Example 1.
The structure is characterized in that the two sides of an n-type crystalline silicon wafer 4 are both provided with pyramid structured suede with average ~ 2 microns, a passivated antireflection layer I3 and a passivated antireflection layer II 6 are both provided with silicon nitride films, a metal grid line I1 and a metal grid line II 7 are both provided with Ag grid line structures matched with main grids and auxiliary grids, the covering area is 3% of the surface area of the silicon wafer, the double-sided light entering characteristics of the structure are excellent, namely, any side can be used as a main light entering surface.
The light inlet characteristics of the two surfaces of the structure are both excellent, and the two surfaces of the structure can be used as main light inlet surfaces. If the solar cell is used as a single-side light-entering solar cell, a layer of metal can be plated on the back light surface to be used as a reflecting layer, so that the short-circuit current of the single-side light-entering solar cell is increased.
Example 2.
The double-sided passivation-light-entering region of an n-type crystalline silicon wafer 4 adopts a pyramid structure suede with the average diameter of ~ 1 microns, an emitter-conductive region and a back electric field-conductive region adopt chemical polishing structures, a passivation antireflection layer I3 adopts a silicon dioxide/silicon nitride composite film, a passivation antireflection layer II 6 adopts a silicon nitride film, a metal grid line I1 and a metal grid line II 7 both adopt a Ni/Cu/Ag composite grid line structure matched with a main grid and an auxiliary grid, the covering area is 1% of the surface area of the silicon wafer, the double-sided light-entering characteristics of the structure are excellent, namely, any one side can be used as a main light-entering surface, if the structure is used as a single-sided light-entering solar cell, a metal layer can be plated on the back light surface to serve as a light-reflecting layer, the short-circuit current serving as the single-sided light-entering solar cell is increased, and the emitting pole surface is preferably used as a main light-facing surface.
The light inlet characteristics of the two surfaces of the structure are both excellent, and the two surfaces of the structure can be used as main light inlet surfaces. If the solar cell is used as a single-side light-entering solar cell, a layer of metal can be plated on the back light surface to be used as a reflecting layer, so that the short-circuit current of the single-side light-entering solar cell is increased.
Claims (2)
1. A homogeneous crystalline silicon double-sided solar cell structure without being shielded by a heavily doped layer in a light inlet region is characterized in that an n-type crystalline silicon wafer (4) is used as a substrate, and an emitter surface of the solar cell structure is divided into an emitter-conductive region and a passivation-light inlet region: the emitter-conductive region is formed by a heavily doped p-type crystalline silicon emitter layer (2) and a metal grid line I (1) from a substrate to the outside in sequence, the passivation-light inlet region is formed by a passivation antireflection layer I (3), and the two regions are distributed in a crossed manner and are not overlapped;
the back electric field surface is divided into a passivation-light inlet area and a back electric field-conductive area: the passivation-light inlet region is sequentially provided with a heavily doped n-type crystalline silicon layer II (5) and a passivation antireflection layer II (6) from the substrate to the outside; the back electric field-conductive region is sequentially provided with a heavily doped n-type crystalline silicon layer II (5) and a metal grid line II (7) from the substrate to the outside, and the two regions are distributed in a crossed manner and are not overlapped.
2. The homojunction crystalline silicon double-sided solar cell structure without the shielding of the heavily doped layer in the light-in region as claimed in claim 1, wherein the ratio of the total coverage area of the metal grid lines on the surface of the device is 1 ~ 3%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820330969.9U CN209981227U (en) | 2018-03-12 | 2018-03-12 | Homogeneous crystalline silicon double-sided solar cell structure without shielding of heavily doped layer in light inlet region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820330969.9U CN209981227U (en) | 2018-03-12 | 2018-03-12 | Homogeneous crystalline silicon double-sided solar cell structure without shielding of heavily doped layer in light inlet region |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209981227U true CN209981227U (en) | 2020-01-21 |
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| CN201820330969.9U Expired - Fee Related CN209981227U (en) | 2018-03-12 | 2018-03-12 | Homogeneous crystalline silicon double-sided solar cell structure without shielding of heavily doped layer in light inlet region |
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| Country | Link |
|---|---|
| CN (1) | CN209981227U (en) |
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2018
- 2018-03-12 CN CN201820330969.9U patent/CN209981227U/en not_active Expired - Fee Related
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Granted publication date: 20200121 |