CN110047952A - A kind of solar battery Al grid line structure and preparation method thereof - Google Patents
A kind of solar battery Al grid line structure and preparation method thereof Download PDFInfo
- Publication number
- CN110047952A CN110047952A CN201910269917.4A CN201910269917A CN110047952A CN 110047952 A CN110047952 A CN 110047952A CN 201910269917 A CN201910269917 A CN 201910269917A CN 110047952 A CN110047952 A CN 110047952A
- Authority
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- China
- Prior art keywords
- grid line
- contact hole
- solar battery
- main gate
- paste
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Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052709 silver Inorganic materials 0.000 claims abstract description 40
- 239000004332 silver Substances 0.000 claims abstract description 40
- 239000004411 aluminium Substances 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000002002 slurry Substances 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 28
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 239000002905 metal composite material Substances 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract description 2
- 239000002356 single layer Substances 0.000 abstract description 2
- 229910017107 AlOx Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
It is an object of the invention to disclose a kind of solar battery Al grid line structure and preparation method thereof, compared with prior art, P-doped zone pair grid line uses bottom to replace silver paste or silver-colored aluminium paste pair grid line by the lamination pair grid line of silver paste by aluminium paste top layer, it is substantially reduced golden half ohmic contact regions contact resistance and contacts compound, improve battery efficiency, secondary grid line slurry silver paste or silver-colored aluminium paste valence consumption are reduced simultaneously, reduce battery cost；Solve the problems, such as single layer Al as secondary grid line bring conductivity is low and shading surface it is big, bring contacts that metal composite is big, resistivity is high in silver paste pad region when solving the problems, such as aluminium paste as main gate line, achieves the object of the present invention.
Description
Technical field
The present invention relates to a kind of grid line structure and preparation method thereof, in particular to a kind of solar battery Al grid line structure and
Preparation method.
Background technique
Photovoltaic power generation is current one of the major way for utilizing solar energy, and solar energy power generating is cleaned, safely, just because of it
The features such as sharp, efficient, it has also become countries in the world common concern and the new industry given priority to.Therefore, it furthers investigate and utilizes
Solar energy resources, to alleviating, crisis of resource, improving the ecological environment is had a very important significance.
The P-doped zone of solar battery generallys use silver paste or silver-colored aluminium paste as secondary grid line metal electrode, completes to electricity
Pond matrix generates the collection of photogenerated current, and secondary gate line electrode is simultaneously connected with the main gate line of silver paste formation, will be secondary by main gate line
Electric current confluence output on grid line.Half ohmic contact regions of gold that silver paste or silver-colored aluminium paste are formed as secondary grid line with P-doped zone connect
Electric shock resistance is big, contacts compound high limitation battery efficiency and is further promoted.It is high with pair grid line slurry silver paste or silver-colored aluminium paste price, so that
Battery cost is difficult to reduce.
The Al grid line that the P-doped zone of solar battery also uses aluminium paste to be formed is used as secondary grid line, but due to aluminium paste conduct
It is low that pulling force is welded when main gate line, often uses pad of the silver paste as main gate line.The main gate line double exposure that aluminium paste is formed is in silver paste
The edge upper layer of pad realizes connection, and the pad for conducting the current to silver paste formation is exported.
Above structure the problem is that, Al grid line Conductivity Ratio silver paste is far short of what is expected, in order to reduce secondary grid line resistance so
Al grid line wider width, wide Al grid line, which is located at solar battery light-receiving surface face, can all reduce battery light-receiving area.
In addition, in silver paste pad region, since silver paste and the contact metal composite that P-type semiconductor is formed are big, resistivity
The presence of height, the region can reduce cell photoelectric transfer efficiency.
It is accordingly required in particular to a kind of solar battery Al grid line structure and preparation method thereof, to solve above-mentioned existing presence
The problem of.
Summary of the invention
The purpose of the present invention is to provide a kind of solar battery Al grid line structures and preparation method thereof, for the prior art
Deficiency, P-doped zone metal contact resistance and the metal contact for reducing solar battery are compound, and reduce silver paste consumption, drop
Low manufacture of solar cells cost.
Technical problem solved by the invention can be realized using following technical scheme:
In a first aspect, the present invention provides a kind of solar battery Al grid line structure, which is characterized in that it includes secondary grid line,
The pair grid line includes the contact hole formed on passivation layer/antireflection layer of the P-doped zone of solar battery, is connect described
Non- burn-through type aluminium paste is printed in contact hole as secondary grid line bottom and following contact hole is completely covered in aluminium paste, at the secondary grid line bottom
The silver paste of one layer line shape of double exposure is as secondary grid line top layer on layer；The pair grid line is connected with main gate line.
In one embodiment of the invention, the contact hole is linear, line segment shape or dotted.
In one embodiment of the invention, the secondary grid line bottom is linear, line segment shape or dotted.
In one embodiment of the invention, the main gate line includes the contact hole on passivation layer/antireflection layer, described
Aluminium paste is printed on contact hole as main gate line bottom, double exposure silver paste is as main gate line top layer on the main gate line bottom.
In one embodiment of the invention, the main gate line is using linear silver paste as main gate line.
In one embodiment of the invention, when the contact hole is linear, the width of contact hole is 5-500 μm.
In one embodiment of the invention, when the contact hole is line segment shape, the width of contact hole is 5-500 μm, is connect
Contact hole length is 5 μm of -161mm, and the spacing of contact hole is 5 μm of -161mm.
In one embodiment of the invention, when the contact hole is dotted, the shape of contact hole includes but is not limited to three
Angular, round or rectangle, the interior patch circular diameter of the contact hole is 5-500 μm.
Further, the contact hole is circle, and diameter is 10-60 μm.
In one embodiment of the invention, the width of the secondary grid line is 5-500 μm；The width of the main gate line is
50-1500μm。
Further, the secondary grid line top layer silver paste printing width is 20-80 μm.
Further, for the main gate line using linear silver grating line, width is 200-1500 μm.
Second aspect, the present invention also provides a kind of preparation methods of solar battery Al grid line structure, which is characterized in that it
Include the following steps:
A) pass through printing corrosive slurry, laser slotting or light on P-doped zone passivation layer/antireflection layer of silicon wafer matrix
The method at quarter forms metal paste contact hole；
B) aluminium paste is printed on contact hole as secondary grid line base pastes；
C) one layer of silver paste of double exposure is used as secondary grid line top level slurry on secondary grid line base pastes；
D) one or more silver paste is printed as main gate line, and main gate line is connected with secondary grid line.
In one embodiment of the invention, the width of the secondary grid line base pastes is 5-500 μm.
In one embodiment of the invention, the width of the secondary grid line top level slurry is 5-500 μm.
In one embodiment of the invention, the width of the main gate line is 50-1500 μm.
Solar battery Al grid line structure of the invention and preparation method thereof, compared with prior art, P-doped zone pair grid
Line uses bottom to replace silver paste or silver-colored aluminium paste pair grid line by the lamination pair grid line of silver paste by aluminium paste top layer, hence it is evident that reduces by half ohm of gold
Contact area contact resistance and contact are compound, improve battery efficiency, while reducing secondary grid line slurry silver paste or silver-colored aluminium paste valence consumption,
Reduce battery cost；It solves the problems, such as that single layer Al is low big with shading surface as secondary grid line bring conductivity, solves aluminium paste
Metal composite is big, the high problem of resistivity in the contact of silver paste pad region for bring when as main gate line, realizes mesh of the invention
's.
The features of the present invention sees the detailed description of the drawings of the present case and following preferable embodiment and obtains clearly
Solution.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of solar battery Al grid line structure of the invention.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Conjunction is specifically illustrating, and the present invention is further explained.
Embodiment
As shown in Figure 1, solar battery Al grid line structure of the invention, it includes secondary grid line, and the pair grid line is included in
The contact hole formed on passivation layer/antireflection layer 102 of the P-doped zone 101 of solar battery, prints on the contact hole
Non- burn-through type aluminium paste is as secondary grid line bottom 103 and following contact hole is completely covered in aluminium paste, the double exposure on secondary grid line bottom 103
The silver paste of one layer line shape is as secondary grid line top layer 104；The pair grid line is connected with main gate line 105.
In the present embodiment, silicon wafer matrix 100 can may be p-type for N-type；P-doped zone 101 is located at battery front side
It may be alternatively located at cell backside, P-doped zone 101 wholly or partly covers 100 1 surfaces of silicon wafer matrix, and P-doped zone 101 can
To be TOPCon structure that p-type doped crystalline silicon, p-type DOPOS doped polycrystalline silicon, p-type doped amorphous silicon or P+ are lightly doped；Passivation layer/subtract
Reflecting layer 102 be AlOx, SiOx, SiNx or SiOx/SiNx, SiOx/AlOx/SiNx, SiOx/AlOx/SiOx, AlOx/SiOx,
AlOx/SiNx, AlOx/SiNx/SiONx laminated construction.
In the present embodiment, the contact hole is linear, line segment shape or dotted.
In the present embodiment, secondary grid line bottom 103 is linear, line segment shape or dotted.
In the present embodiment, main gate line 105 includes the contact hole on passivation layer/antireflection layer, is printed on the contact hole
Brush aluminium paste is as main gate line bottom, and double exposure silver paste is as main gate line top layer on the main gate line bottom.
In the present embodiment, the main gate line is using linear silver paste as main gate line.
In the present embodiment, when the contact hole is linear, the width of contact hole is 5-500 μm.
In the present embodiment, when the contact hole is line segment shape, the width of contact hole is 5-500 μm, and contact hole length is 5
μm -161mm, the spacing of contact hole are 5 μm of -161mm.
In the present embodiment, the contact hole be it is dotted when, the shape of contact hole include but is not limited to triangle, circle or
Rectangle, the interior patch circular diameter of the contact hole is 5-500 μm.Preferably, the contact hole is circle, and diameter is 10-60 μm.
In the present embodiment, the width of the secondary grid line is 5-500 μm；The width of the main gate line is 50-1500 μm.It is excellent
Selection of land, the pair grid line top layer silver paste printing width is 20-80 μm.Preferably, the main gate line is using linear silver grating line, width
It is 200-1500 μm.
The preparation method of solar battery Al grid line structure of the invention, it includes the following steps:
A) on passivation layer/antireflection layer 102 of the P-doped zone 101 of silicon wafer matrix 100 by printing corrosive slurry,
Laser slotting or the method for photoetching form metal paste contact hole；
B) aluminium paste is printed on contact hole as secondary grid line base pastes, the width of secondary grid line base pastes is 5-500 μm；
C) one layer of silver paste of double exposure is used as secondary grid line top level slurry, the width of secondary grid line top level slurry on secondary grid line base pastes
Degree is 5-500 μm；
D) one or more silver paste is printed as main gate line, and main gate line is connected with secondary grid line, and the width of main gate line is
50-1500μm。
By above step, the preparation of solar battery Al grid line structure of the invention can be completed；In order to be prepared
Solar battery, then need to also be carried out before above-mentioned steps damage, making herbs into wool, the area N+ doping and etc..
Since these steps are the conventional steps in solar battery preparation process, therefore are no longer carried out herein detailed
It introduces.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention, the claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (16)
1. a kind of solar battery Al grid line structure and preparation method thereof, which is characterized in that it includes secondary grid line, the pair grid line
The contact hole formed on passivation layer/antireflection layer including the P-doped zone in solar battery, prints on the contact hole
Non- burn-through type aluminium paste is as secondary grid line bottom and following contact hole is completely covered in aluminium paste, the double exposure one on the secondary grid line bottom
The silver paste of layer line shape is as secondary grid line top layer；The pair grid line is connected with main gate line.
2. solar battery Al grid line structure as described in claim 1, which is characterized in that the contact hole is linear, line segment
Shape is dotted.
3. solar battery Al grid line structure as described in claim 1, which is characterized in that the pair grid line bottom be it is linear,
Line segment shape is dotted.
4. solar battery Al grid line structure as described in claim 1, which is characterized in that the main gate line include passivation layer/
Contact hole on antireflection layer prints aluminium paste as main gate line bottom on the contact hole, folds on the main gate line bottom
Silver paste is printed as main gate line top layer.
5. solar battery Al grid line structure as described in claim 1, which is characterized in that the main gate line is using linear silver
Slurry is used as main gate line.
6. solar battery Al grid line structure as described in claim 1, which is characterized in that when the contact hole is linear, connect
The width of contact hole is 5-500 μm.
7. solar battery Al grid line structure as described in claim 1, which is characterized in that when the contact hole is line segment shape,
The width of contact hole is 5-500 μm, and contact hole length is 5 μm of -161mm, and the spacing of contact hole is 5 μm of -161mm.
8. solar battery Al grid line structure as described in claim 1, which is characterized in that when the contact hole is dotted, connect
The shape of contact hole includes but is not limited to triangle, circle or rectangle, and patch circular diameter is 5-500 μm in the contact hole.
9. solar battery Al grid line structure as claimed in claim 8, which is characterized in that the contact hole is circle, diameter
It is 10-60 μm.
10. solar battery Al grid line structure as described in claim 1, which is characterized in that the width of the pair grid line is 5-
500μm；The width of the main gate line is 50-1500 μm.
11. solar battery Al grid line structure as claimed in claim 10, which is characterized in that the pair grid line top layer silver paste print
Brush width is 20-80 μm.
12. solar battery Al grid line structure as claimed in claim 10, which is characterized in that the main gate line is using linear silver
Grid line, width are 200-1500 μm.
13. a kind of preparation method of solar battery Al grid line structure, which is characterized in that it includes the following steps:
A) pass through printing corrosive slurry, laser slotting or photoetching on P-doped zone passivation layer/antireflection layer of silicon wafer matrix
Method forms metal paste contact hole；
B) aluminium paste is printed on contact hole as secondary grid line base pastes；
C) one layer of silver paste of double exposure is used as secondary grid line top level slurry on secondary grid line base pastes；
D) one or more silver paste is printed as main gate line, and main gate line is connected with secondary grid line.
14. the preparation method of solar battery Al grid line structure as claimed in claim 13, which is characterized in that the pair grid line
The width of base pastes is 5-500 μm.
15. the preparation method of solar battery Al grid line structure as claimed in claim 13, which is characterized in that the pair grid line
The width of top level slurry is 5-500 μm.
16. the preparation method of solar battery Al grid line structure as claimed in claim 13, which is characterized in that the main gate line
Width be 50-1500 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269917.4A CN110047952A (en) | 2019-04-04 | 2019-04-04 | A kind of solar battery Al grid line structure and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269917.4A CN110047952A (en) | 2019-04-04 | 2019-04-04 | A kind of solar battery Al grid line structure and preparation method thereof |
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| CN110047952A true CN110047952A (en) | 2019-07-23 |
Family
ID=67276171
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113140645A (en) * | 2021-04-23 | 2021-07-20 | 南通天晟新能源科技有限公司 | Solar cell n-type doped region grid line structure and preparation method thereof, and solar cell |
| CN113140646A (en) * | 2021-04-23 | 2021-07-20 | 南通天晟新能源科技有限公司 | Solar cell P region grid line structure, preparation method thereof and solar cell |
| CN115020523A (en) * | 2022-06-29 | 2022-09-06 | 浙江晶科能源有限公司 | Solar cell unit, preparation method thereof and solar cell module |
| EP4235807A4 (en) * | 2020-12-28 | 2024-02-21 | Chint New Energy Tech Co Ltd | Back metal electrode of n-type topcon solar cell and preparation method therefor, and cell |
| WO2024060927A1 (en) * | 2022-09-21 | 2024-03-28 | 通威太阳能(眉山)有限公司 | Double-sided solar cell and manufacturing method therefor |
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