CN209652421U - A kind of feeding system suitable for ultra-large atomic layer deposition - Google Patents
A kind of feeding system suitable for ultra-large atomic layer deposition Download PDFInfo
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- CN209652421U CN209652421U CN201920147914.9U CN201920147914U CN209652421U CN 209652421 U CN209652421 U CN 209652421U CN 201920147914 U CN201920147914 U CN 201920147914U CN 209652421 U CN209652421 U CN 209652421U
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- end cover
- cover flange
- carrier
- feeding system
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Abstract
The utility model discloses a kind of feeding system suitable for ultra-large atomic layer deposition, first end cover flange and second end cover flange including silicon wafer carrier and the clamping silicon wafer carrier；The axis connection that the first end cover flange and second end cover flange pass perpendicularly through first end cover flange and second end cover flange by several forms entirety, and wherein one end of axis passes through the first end cover flange, with second end cover flanged joint；The other end of axis stretches out first end cover flange, and a spring is arranged on extension, and shaft-cup is arranged in the end of extension end, and the spring is limited in the extension end of axis.The a part of silicon wafer carrier as inner cavity chamber in the utility model greatly reduces its self weight, and transhipment is light, while this feeding system carrier is directly heated, can significantly improve the rate of heat addition, shorten heating time, heat utilization ratio is high.
Description
Technical field
The invention belongs to field of semiconductor manufacture, and in particular to photovoltaic cell manufacturing field, by atomic layer deposition (ALD) skill
Art is applied to photovoltaic art, the equipment for producing ultra-large product.
Background technique
With the scale of photovoltaic industry and the rapid development of photovoltaic technology, ALD technique, i.e. technique for atomic layer deposition become
The effective way of photovoltaic products cost efficiency.Product is exactly exposed to two or more presoma by technique for atomic layer deposition
Plated film is carried out in gas, coating chamber is separated into material chamber (inner cavity chamber) and vacuum chamber (exocoel by common ALD equipment
Room), material chamber can be detached from from main equipment and charge, and material chamber is transported in vacuum chamber again after installing product.
Inner cavity chamber is the rectangular chamber being mainly made of air inlet, gas outlet and material mouth.This structure has the disadvantage in that
The self weight of material chamber is very big, is unfavorable for transporting；The big thermal capacity of quality is also just big, is unfavorable for heat utilization and increases product heating
Time；Loading and unloading is inconvenient above for material mouth；Lid door heaviness is also unfavorable for loading and unloading；Air inlet is also easy to produce powder without flow-harmonization device
Dirt.
Summary of the invention
Goal of the invention: a kind of suitable for ultra-large atom present invention aims in view of the deficiencies of the prior art, providing
The feeding system of layer deposition, alleviates its self weight to greatest extent and is conducive to its transhipment；More importantly its thermal capacity is low advantageous
In offer heat utilization ratio, and improve product heating speed.
Technical solution: the feeding system of the present invention suitable for ultra-large atomic layer deposition, including silicon wafer carrier with
And the first end cover flange and second end cover flange of the clamping silicon wafer carrier；
The first end cover flange and second end cover flange pass perpendicularly through first end cover flange and second end by several
The axis connection of lid flange forms entirety, and wherein one end of axis passes through the first end cover flange, with second end cover flanged joint；Axis
The other end stretch out first end cover flange, and a spring is arranged on extension, shaft-cup is arranged in the end of extension end, will be described
Spring is limited in the extension end of axis.
Further preferably technical solution is the present invention, and the first end cover flange is flow-harmonization device, the second end cover
Flange is exhaust flange.
Preferably, the flow-harmonization device includes the circulation duct for being passed through precursor gas, the air inlet of the circulation duct
Several air inlets are offered on the end face of end, outlet side end face is divided into the venthole that quantity and air inlet hole number match, outlet
Hole is connected to space where the silicon wafer carrier, and the inner cavity of circulation duct is divided into quantity and the consistent individual flow of outlet hole number
Road；Each venthole is connected with corresponding one or more air inlets by the corresponding independent flow passage being located in circulation duct
Logical, each independent flow passage is in " horn-like ", and by the lateral venthole side of air inlet, internal diameter is gradually increased.
Preferably, it is provided with bleeding point on the outside of the exhaust flange, which docks with exhaust system.
Preferably, the axis is four, and four axis are located at the four of the first end cover flange and second end cover flange
Angle Position.
Preferably, the spring is high temperature resistant spring.
Preferably, the silicon wafer carrier includes the carrier group of several groups laid out in parallel, and carrier group is by multiple loads described in every group
Tool composition, the carrier includes the carrier frame that two bottom plates and both side plate surround, with organize carrier group in each carrier bottom plate and
Side plate is end to end, surrounds hollow column structure；
Several tooth sockets are from top to bottom evenly equipped on the both side plate opposite side of each carrier, the tooth socket one on both side plate is a pair of
Answer, and corresponding two tooth is generally aligned in the same plane, corresponding two tooth socket carries two wafers on both side plate, two wafers to
Plated film side is laterally outer, and the other side is bonded to each other；It is spliced to form with two wafers on each carrier in group carrier group with position whole
Body, the space above and below the position wafer are respectively communicated with to form airflow channel.
The utility model has the advantages that (1) feeding system of the invention is in feeding, and external force compressed spring, first end cover flange and second
Spacing increases between end cap flange, and silicon wafer carrier can from below or detachment system is taken out in top, and in feed, silicon wafer carrier is by bullet
Spring steps up the composition part as inner cavity chamber；The a part of silicon wafer carrier as inner cavity chamber, greatly reduces it in the present invention
Self weight, transhipment is light, while this feeding system carrier is directly heated, can significantly improve the rate of heat addition, shorten heating time, heat
Utilization rate is high；
(2) the first end cover flange of feeding system of the invention is flow-harmonization device, eliminates additional uniform flow equipment, can be with
Avoid or reduce dust generation；Feeding system is using high temperature spring as the power stepped up, and structure is simple, cheap, stability is good,
It is easy to operate, and four springs are evenly distributed on uniform force when stepping up carrier, are bonded to each other conducive to each contact surface, avoid gas
Body leakage.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of feeding system of the present invention；
Fig. 2 is the structural schematic diagram of flow-harmonization device of the present invention；
Fig. 3 is the Section A-A figure of Fig. 2；
In figure, 1- silicon wafer carrier, 2- first end cover flange, 3- second end cover flange, 4- shaft-cup, 5- axis, 6- high temperature resistant bullet
Spring.
Specific embodiment
Technical solution of the present invention is described in detail below by attached drawing, but protection scope of the present invention is not limited to
The embodiment.
Embodiment: a kind of feeding system suitable for ultra-large atomic layer deposition, including silicon wafer carrier 1 and clamping silicon
The first end cover flange 2 and second end cover method of piece carrier 1.
Silicon wafer carrier 1 includes the carrier group of several groups laid out in parallel, and every group of carrier group is made of multiple carriers, and carrier includes
Carrier frame that two bottom plates and both side plate surround, it is end to end with the bottom plate and side plate for organizing each carrier in carrier group, it surrounds
Empty column structure；Several tooth sockets, the tooth socket one on both side plate are from top to bottom evenly equipped on the both side plate opposite side of each carrier
One is corresponding, and corresponding two tooth is generally aligned in the same plane, and corresponding two tooth socket carries two wafers, two wafers on both side plate
Side to be coated it is laterally outer, the other side is bonded to each other；Splice shape with two wafers on each carrier in group carrier group with position
Integral, the space above and below the position wafer is respectively communicated with to form airflow channel.
First end cover flange 2 is flow-harmonization device, and flow-harmonization device includes the circulation duct for being passed through precursor gas, the runner pipe
Several air inlets are offered on the inlet end end face in road, outlet side end face is divided into the outlet that quantity and air inlet hole number match
Hole, venthole are connected to 1 place space of silicon wafer carrier, and the inner cavity of circulation duct is divided into quantity and outlet hole number is consistent solely
Vertical runner；Each venthole passes through the corresponding independent flow passage phase in circulation duct with corresponding one or more air inlets
Connection, each independent flow passage are in " horn-like ", and by the lateral venthole side of air inlet, internal diameter is gradually increased.
Second end cover flange 3 is exhaust flange, is provided with bleeding point on the outside of exhaust flange, the bleeding point and exhaust system
Docking.
First end cover flange 2 and second end cover flange 3 pass through four and pass perpendicularly through first end cover flange 2 and second end cover method
The connection of axis 5 of orchid 3 forms the corner location that whole four axis 5 are located at first end cover flange 2 and second end cover flange 3.Axis 5
Wherein one end pass through first end cover flange 2, connect with second end cover flange 3；The other end of axis 5 stretches out first end cover flange 2,
And a high temperature resistant spring 6 is arranged on extension, shaft-cup 4 is arranged in the end of extension end, and high temperature resistant spring 6 is limited in axis 5
Extension end.
Feeding system is in feeding, external force compressed spring 6, and spacing increases between first end cover flange 2 and second end cover flange 3
Greatly, silicon wafer carrier 1 can from below or detachment system is taken out in top, and in feed, silicon wafer carrier 1 is stepped up to become inner cavity chamber by spring 6
Composition part.
As described above, must not be explained although the present invention has been indicated and described referring to specific preferred embodiment
For the limitation to invention itself.It without prejudice to the spirit and scope of the invention as defined in the appended claims, can be right
Various changes can be made in the form and details for it.
Claims (7)
1. a kind of feeding system suitable for ultra-large atomic layer deposition, which is characterized in that including silicon wafer carrier and clamping
The first end cover flange and second end cover flange of the silicon wafer carrier；
The first end cover flange and second end cover flange pass perpendicularly through first end cover flange and second end cover method by several
Blue axis connection forms entirety, and wherein one end of axis passes through the first end cover flange, with second end cover flanged joint；Axis it is another
First end cover flange is stretched out in one end, and a spring is arranged on extension, and shaft-cup is arranged in the end of extension end, by the spring
It is limited in the extension end of axis.
2. the feeding system according to claim 1 suitable for ultra-large atomic layer deposition, which is characterized in that described
One end cap flange is flow-harmonization device, and the second end cover flange is exhaust flange.
3. the feeding system according to claim 2 suitable for ultra-large atomic layer deposition, which is characterized in that described even
Flowing device includes the circulation duct for being passed through precursor gas, offers several air inlets on the inlet end end face of the circulation duct,
Outlet side end face is divided into the venthole that quantity and air inlet hole number match, and space where venthole and the silicon wafer carrier connects
Logical, the inner cavity of circulation duct is divided into quantity and the consistent independent flow passage of outlet hole number；Each venthole and corresponding one
A or multiple air inlets are connected by the correspondence independent flow passage being located in circulation duct, and each independent flow passage is in " horn-like ", by
The lateral venthole side of air inlet, internal diameter are gradually increased.
4. the feeding system according to claim 2 suitable for ultra-large atomic layer deposition, which is characterized in that the pumping
It is provided with bleeding point on the outside of gas flange, which docks with exhaust system.
5. the feeding system according to claim 1 suitable for ultra-large atomic layer deposition, which is characterized in that the axis
It is four, four axis are located at the corner location of the first end cover flange and second end cover flange.
6. the feeding system according to claim 1 suitable for ultra-large atomic layer deposition, which is characterized in that the bullet
Spring is high temperature resistant spring.
7. the feeding system according to claim 1 suitable for ultra-large atomic layer deposition, which is characterized in that the silicon
Piece carrier includes the carrier group of several groups laid out in parallel, and carrier group described in every group is made of multiple carriers, and the carrier includes two
The carrier frame that bottom plate and both side plate surround, it is end to end with the bottom plate and side plate for organizing each carrier in carrier group, it surrounds hollow
Column structure；
Several tooth sockets are from top to bottom evenly equipped on the both side plate opposite side of each carrier, the tooth socket on both side plate corresponds, and
Corresponding two tooth is generally aligned in the same plane, and corresponding two tooth socket carries two wafers on both side plate, two wafers it is to be coated
Side is laterally outer, and the other side is bonded to each other；It is spliced to form entirety with two wafers on each carrier in group carrier group with position, it should
Space above and below the wafer of position is respectively communicated with to form airflow channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920147914.9U CN209652421U (en) | 2019-01-28 | 2019-01-28 | A kind of feeding system suitable for ultra-large atomic layer deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920147914.9U CN209652421U (en) | 2019-01-28 | 2019-01-28 | A kind of feeding system suitable for ultra-large atomic layer deposition |
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| Publication Number | Publication Date |
|---|---|
| CN209652421U true CN209652421U (en) | 2019-11-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920147914.9U Active CN209652421U (en) | 2019-01-28 | 2019-01-28 | A kind of feeding system suitable for ultra-large atomic layer deposition |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536927A (en) * | 2019-01-28 | 2019-03-29 | 南京爱通智能科技有限公司 | A kind of feeding system suitable for ultra-large atomic layer deposition |
-
2019
- 2019-01-28 CN CN201920147914.9U patent/CN209652421U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536927A (en) * | 2019-01-28 | 2019-03-29 | 南京爱通智能科技有限公司 | A kind of feeding system suitable for ultra-large atomic layer deposition |
| CN109536927B (en) * | 2019-01-28 | 2023-08-01 | 南京爱通智能科技有限公司 | Feeding system suitable for ultra-large scale atomic layer deposition |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221216 Address after: 294, Building 01, No. 68 Ruoshui Road, Tangshan Street, Jiangning District, Nanjing, Jiangsu Province, 210,000 Patentee after: Nanjing Junyang Science and Technology Development Partnership (L.P.) Address before: 210000 No. 12, Mazhou East Road, Mau Ling Street, Jiangning District, Nanjing, Jiangsu Patentee before: NANJING AITONG INTELLIGENT TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230410 Address after: 214000 No.209, Zhangjing east section, Xigang Road, Xibei Town, Xishan District, Wuxi City, Jiangsu Province Patentee after: Aihua (Wuxi) semiconductor technology Co.,Ltd. Address before: 294, Building 01, No. 68 Ruoshui Road, Tangshan Street, Jiangning District, Nanjing, Jiangsu Province, 210,000 Patentee before: Nanjing Junyang Science and Technology Development Partnership (L.P.) |