CN209592033U - Power semiconductor modular and vehicle - Google Patents
Power semiconductor modular and vehicle Download PDFInfo
- Publication number
- CN209592033U CN209592033U CN201920447732.3U CN201920447732U CN209592033U CN 209592033 U CN209592033 U CN 209592033U CN 201920447732 U CN201920447732 U CN 201920447732U CN 209592033 U CN209592033 U CN 209592033U
- Authority
- CN
- China
- Prior art keywords
- power semiconductor
- chip
- conductive layer
- heat
- radiating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 70
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical group [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 2
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000035939 shock Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003447 ipsilateral effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Inverter Devices (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920447732.3U CN209592033U (en) | 2019-04-03 | 2019-04-03 | Power semiconductor modular and vehicle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920447732.3U CN209592033U (en) | 2019-04-03 | 2019-04-03 | Power semiconductor modular and vehicle |
Publications (1)
Publication Number | Publication Date |
---|---|
CN209592033U true CN209592033U (en) | 2019-11-05 |
Family
ID=68375407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201920447732.3U Active CN209592033U (en) | 2019-04-03 | 2019-04-03 | Power semiconductor modular and vehicle |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN209592033U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111146096A (en) * | 2019-11-26 | 2020-05-12 | 通富微电子股份有限公司 | Double-sided heat dissipation semiconductor device and single-reflow soldering method thereof |
CN112490233A (en) * | 2020-12-11 | 2021-03-12 | 广东汇芯半导体有限公司 | Intelligent power module and manufacturing method thereof |
-
2019
- 2019-04-03 CN CN201920447732.3U patent/CN209592033U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111146096A (en) * | 2019-11-26 | 2020-05-12 | 通富微电子股份有限公司 | Double-sided heat dissipation semiconductor device and single-reflow soldering method thereof |
CN112490233A (en) * | 2020-12-11 | 2021-03-12 | 广东汇芯半导体有限公司 | Intelligent power module and manufacturing method thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 518118 BYD Road, Pingshan New District, Shenzhen, Guangdong 3009 Patentee after: BYD Co.,Ltd. Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518118 BYD Road, Pingshan New District, Shenzhen, Guangdong 3009 Patentee before: BYD Co.,Ltd. Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518118 BYD Road, Pingshan New District, Shenzhen, Guangdong 3009 Patentee after: BYD Co.,Ltd. Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518118 BYD Road, Pingshan New District, Shenzhen, Guangdong 3009 Patentee before: BYD Co.,Ltd. Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210210 Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518118 BYD Road, Pingshan New District, Shenzhen, Guangdong 3009 Patentee before: BYD Co.,Ltd. Patentee before: BYD Semiconductor Co.,Ltd. |