CN209592033U - Power semiconductor modular and vehicle - Google Patents
Power semiconductor modular and vehicle Download PDFInfo
- Publication number
- CN209592033U CN209592033U CN201920447732.3U CN201920447732U CN209592033U CN 209592033 U CN209592033 U CN 209592033U CN 201920447732 U CN201920447732 U CN 201920447732U CN 209592033 U CN209592033 U CN 209592033U
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- power semiconductor
- chip
- conductive layer
- heat
- radiating substrate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 70
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical group [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 2
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000035939 shock Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003447 ipsilateral effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Inverter Devices (AREA)
Abstract
This disclosure relates to a kind of power semiconductor modular and vehicle, the module includes power semiconductor chip and the first heat-radiating substrate and the second heat-radiating substrate for being connected to the power semiconductor chip two sides, the module further includes the first electrical interconnecting block, there is conductive layer, power semiconductor chip is connected by the first electrical interconnecting block with conductive layer on first heat-radiating substrate or the second heat-radiating substrate.By the way that the first heat-radiating substrate and the second scattered substrate is arranged to realize the two-side radiation to power semiconductor chip in the two sides of power semiconductor chip, and pass through the electrical connection of the first electrical interconnecting block and conductive layer of setting, power semiconductor chip can be made to complete the electrical connection with other devices by conductive layer, it is more reliable and more stable to replace existing wiring to realize the electrical connection of power semiconductor chip.
Description
Technical field
This disclosure relates to power electronics field, and in particular, to a kind of power semiconductor modular and vehicle.
Background technique
Power semiconductor modular is the device that multiple semiconductor chips are packaged together according to certain circuit structure.In
In one IGBT module, igbt chip and diode chip for backlight unit are integrated on one piece of common bottom plate, and the power device of module
With its mounting surface mutually insulated.
The structure that IGBT module has at present: chip lower surface is connected directly between on DBC substrate, then will post chip
DBC substrate is attached with radiating bottom plate, and connection type has crimping, welding etc., and the chip of upper surface metallization uses thin aluminium
It makes bonded line and realizes electrical connection with bonded mode.DBC substrate both ensure that Thermal conductivity also made power device and mould
Electric insulation is realized between block bottom plate.Heat-removal modalities mostly use greatly the mode for carrying out liquid cooling to the heat sink of chip-side
It radiates to module.
Chip upper surface is covered by Silica hydrogel, substantially without heat-sinking capability, only leans on DBC substrate and the bottom of chip lower surface
Plate radiates, and this encapsulating structure is made of multilayer material, and structure is complex, and the structure of multilayer interferes heat dissipation, bottom
Plate heat-sinking capability is limited, and entire module thermal resistance is big.DBC substrate occurs crackle during multiple temperature cycles or temperature shock
The risk of equal failures and then the service life for influencing module.
Utility model content
Purpose of this disclosure is to provide a kind of power semiconductor modular and vehicle, which can realize two-side radiation, structure
Simply, heat-sinking capability is strong.
To achieve the goals above, the disclosure provides a kind of power semiconductor modular, and the module includes power semiconductor
Chip and the first heat-radiating substrate and the second heat-radiating substrate for being connected to the power semiconductor chip two sides, the module are also wrapped
The first electrical interconnecting block is included, there is conductive layer on first heat-radiating substrate or second heat-radiating substrate, the power is partly led
Body chip is connected by the first electrical interconnecting block with the conductive layer.
Optionally, the module includes power terminal, and the power terminal is arranged on first heat-radiating substrate, described
Power semiconductor chip is connected by the first electrical interconnecting block with the conductive layer of second heat-radiating substrate, the function
Rate terminal is connected by the second electrical interconnecting block with the conductive layer.
Optionally, the module further includes control terminal, and the power semiconductor chip includes the first chip and the second core
Piece, first chip and the second chip are respectively provided on first heat-radiating substrate, and pass through one first electrical turn respectively
It connects block to be connected with the conductive layer, first chip passes through corresponding first electrical interconnecting block, the conductive layer and described the
Two electrical interconnecting blocks are connected with the power terminal, and second chip is electrically connected by bonding line with the control terminal.
Optionally, first chip is igbt chip, and second chip is FRD chip.
Optionally, first heat-radiating substrate has ipsilateral and spaced first conductive layer, the second conductive layer and the
Three conductive layers, first chip and second chip are fixedly connected on first conductive layer, the power terminal welding
On the second conductive layer, the control terminal is welded on the third conductive layer.
Optionally, the power semiconductor chip is multiple, and multiple power semiconductor chip passes through described first respectively
Electrical interconnecting block is connected with the conductive layer.
Optionally, between the conductive layer and corresponding electrical interconnecting block and the power semiconductor chip and described
Welded connecting is all made of between electrical interconnecting block.
Optionally, first heat-radiating substrate and/or second heat-radiating substrate are to cover resin of copper substrate, the conductive layer
By the copper sheet layer for covering resin of copper substrate and covering.
Optionally, the module further includes plastic-sealed body, and the plastic-sealed body is used to carry out molding to the module.
Optionally, the material of corresponding electrical interconnecting block is copper-molybdenum.
The disclosure also provides a kind of vehicle, which includes the power semiconductor modular.
The disclosure the utility model has the advantages that
By the way that the first heat-radiating substrate and the second heat-radiating substrate is arranged to realize to power in the two sides of power semiconductor chip
The two-side radiation of semiconductor chip, and by the electrical connection of the first electrical interconnecting block and conductive layer of setting, conduction can be passed through
Layer makes power semiconductor chip complete the electrical connection with other devices, so that existing wiring be replaced to realize power semiconductor chip
The electrical connection of piece, it is more reliable and more stable.
Other feature and advantage of the disclosure will the following detailed description will be given in the detailed implementation section.
Detailed description of the invention
Attached drawing is and to constitute part of specification for providing further understanding of the disclosure, with following tool
Body embodiment is used to explain the disclosure together, but does not constitute the limitation to the disclosure.In the accompanying drawings:
Fig. 1 is the structure schematic diagram of the power semiconductor modular of an embodiment of the present disclosure；
Fig. 2 is the top view of the power semiconductor modular of an embodiment of the present disclosure.
Description of symbols
1 power semiconductor chip, 2 first heat-radiating substrate
3 second heat-radiating substrate, 4 first electrical interconnecting block
5 power terminal, 6 second electrical interconnecting block
7 control terminal, 8 bonding line
9 plastic-sealed body, 11 first chip
12 second chip, 21 first conductive layer
22 second conductive layer, 23 third conductive layer
100 solder, 10 first copper sheet layer
20 second copper sheet layer, 30 resin layer
Specific embodiment
It is described in detail below in conjunction with specific embodiment of the attached drawing to the disclosure.It should be understood that this place is retouched
The specific embodiment stated is only used for describing and explaining the disclosure, is not limited to the disclosure.
As depicted in figs. 1 and 2, the disclosure provides a kind of power semiconductor modular, which may include power semiconductor
Chip 1 and the first heat-radiating substrate 2 and the second heat-radiating substrate 3 for being connected to 1 two sides of power semiconductor chip, this first is dissipated
Hot substrate 2 and the second heat-radiating substrate 3 are used to carry out radiating treatment to the two sides of the power semiconductor chip 1, and structure is simple, radiates
Performance is good.It specifically can be by way of cooling first heat-radiating substrate 2 of liquid and the second heat-radiating substrate 3 come to above-mentioned power
Semiconductor chip 1 carries out radiating treatment.Module can also include the first electrical interconnecting block 4, the first heat-radiating substrate 2 or the second heat dissipation
Can have conductive layer on substrate 3, power semiconductor chip 1 can be connected by the first electrical interconnecting block 4 with conductive layer, so that
The first electrical interconnecting block 4 as electric connecting part instead of a plurality of wiring of the prior art, thus pass through conductive layer complete
The electrical connection of power semiconductor chip and other devices, structure is simple, realizes the biography that heat also may be implemented while electrical connection
It passs, the heat on power semiconductor chip 1 is passed into the first heat-radiating substrate 2 by the first electrical interconnecting block 4 or second dissipates
Hot substrate 3.
Specifically, as shown in Figure 1, the power semiconductor modular may include power terminal 5, which be can wrap
Input terminal and output end are included, input terminal can connect input dc power with the battery pack on vehicle, utilize the power semiconductor mould
The inversion function of power semiconductor chip 1 in block carries out the inversion of electric current, and is connected to motor through output end output alternating current.
Power terminal 5 can be set on the first heat-radiating substrate 2, and power semiconductor chip 1 can pass through the first electrical interconnecting block 4 and
The conductive layer of two heat-radiating substrates 3 is connected, and power terminal 5 is connected by the second electrical interconnecting block 6 with conductive layer.In specific works feelings
Under condition, it is electrical successively to pass to first after the inversion of power semiconductor chip 1 for the electric current of 5 input terminal of power terminal input
Transfer block 4, the conductive layer of the second heat-radiating substrate 3 and the second electrical interconnecting block 6, are finally transferred to the output end of power terminal 5,
The output of electric current after inversion is completed by two electrical interconnecting blocks and conductive layer.And during the work time, first electrical turn
Connecing block 4 also can be by the heat transfer on power semiconductor chip 1 to the second heat-radiating substrate 3, correspondingly, the first heat-radiating substrate 2
Also connect with the other side of the power semiconductor chip 1, thus realize to the two sides (i.e. two-sided) of the power semiconductor chip 1 into
Row radiating treatment, structure is simple and thermal diffusivity is good.
More specifically, the control terminal 7 can as shown in Figure 1, the power semiconductor modular can also include control terminal 7
Using as signal output end be used for on power semiconductor chip 1 electric current or temperature etc. detect, to guarantee that power is partly led
The normal work of body chip 1.The control terminal 7 is also used as gate signal end for input voltage signal, thus realization pair
The control of the power semiconductor modular being switched on or off.Power semiconductor chip 1 may include the first chip 11 and second
Chip 12, first chip 11 and the second chip 12 can be respectively provided on the first heat-radiating substrate 2, and pass through one the respectively
One electrical interconnecting block 4 is connected with the conductive layer of the second above-mentioned heat-radiating substrate 3, and the first chip 11 passes through corresponding first electrical turn
It connects block 4, the conductive layer of the second heat-radiating substrate 3 and the second electrical interconnecting block 6 to be connected with power terminal 5, the second chip 12 can lead to
Bonding line 8 is crossed to be electrically connected with control terminal 7.In this embodiment, why it is arranged so, is because control terminal 7 is defeated
Electric current out is small, directly can be mounted on the second chip 12 and occupy few installation space by a bonding line 8, therefore
Second chip 12 is electrically connected using bonding line 8 and control terminal 7.
As an alternative embodiment, the first chip 11 can be igbt chip (insulated gate
Bipolar transistor, insulated gate bipolar transistor), the second chip 12 can be FRD chip (fast recovery
Diode, fast recovery diode), it is encapsulated in power semiconductor modular by specific circuit bridge to realize specific function
Can, such as the function of converting direct-current power into alternating-current power can be realized by the combination of igbt chip and FRD chip.
Further, as shown in Figure 1, the first heat-radiating substrate 2 can have ipsilateral and spaced first conductive layer 21,
Second conductive layer 22 and third conductive layer 23, between the first conductive layer 21, the second conductive layer 22 and third conductive layer 23
Mutually insulated.First chip 11 and the second chip 12 can be fixedly connected on first conductive layer 21, being fixedly connected here
It is not limited only to welding manner, can also be attached using modes such as silver sintering, crimping.Power terminal 5 can be welded on second
On conductive layer 22, control terminal 7 can be welded on third conductive layer 23, and specifically, solder 100 can be kamash alloy, but
Be the disclosure to this with no restriction, the welding material that other types can also be selected to meet welding requirements is welded.
Alternatively optional embodiment, power semiconductor chip 1 can be multiple, multiple power semiconductor
Chip 1 can be connected by the first electrical interconnecting block 4 with the conductive layer on the second heat-radiating substrate 3 respectively, to realize that power is partly led
The electrical connection of body chip 1, and the first electrical interconnecting block 4 also can be realized the transmitting of heat, it can be by power semiconductor chip
In heat transfer to the second heat-radiating substrate 3 on piece 1.That is, electrical interconnecting block and conductive layer can also be completed in present embodiment
Signal transmission between multiple chips.
In addition, between conductive layer and corresponding electrical interconnecting block and between power semiconductor chip 1 and electrical interconnecting block
Be all made of welded connecting, specifically, the two sides of the first electrical interconnecting block 4 can respectively with power semiconductor chip 1 and second
Conductive layer on heat-radiating substrate 3 welds together, and the two sides of the second electrical interconnecting block 6 can be respectively and on the second heat-radiating substrate 3
Conductive layer and the second above-mentioned conductive layer 22 weld together, installation stablize, it is compact-sized.
As shown in Figure 1, the first heat-radiating substrate 2 and/or the second heat-radiating substrate 3 can be to cover resin of copper substrate, resin of copper is covered
Substrate may include the first copper sheet layer 10, the second copper sheet layer 20 and be arranged between the first copper sheet layer 10 and the second copper sheet layer 20
Resin layer 30, the resin layer 30 have good insulation performance, the power semiconductor modular can be effectively prevent to leak electricity
The case where；And it is good that this covers resin of copper substrate heating conduction, resistance to temperature cycles and temperature shock ability with higher, thus
The reliability of the power semiconductor modular is set to be effectively improved.And above-mentioned conductive layer can be covered by resin of copper substrate is covered
The second copper sheet layer 20 to realize conductive function.The utility model embodiment is using resin of copper substrate is covered, with existing application
It covers copper ceramic substrate (DBC) to compare, covers resin of copper substrate with higher resistance to temperature cycles and temperature shock ability, so that power
Semiconductor module has higher reliability.As shown in Fig. 2, module further includes plastic-sealed body 9, plastic-sealed body 9 is used for above-mentioned
Power semiconductor modular carries out molding, guarantees the stability and safety of module.
As an alternative embodiment, the material of corresponding electrical interconnecting block be can be with copper-molybdenum, specifically, the first electricity
Copper-molybdenum material can be selected in gas transfer block 4 and the second electrical interconnecting block 6, but the disclosure is electrical to the first electrical interconnecting block 4 and second
Transfer block 6 select material with no restriction, can also select such as other materials for meeting requirement of copper carry out using.
The disclosure also provides a kind of vehicle, which includes above-mentioned power semiconductor modular, the power semiconductor modular
It can be used in vehicle in the controller of motor, the input terminal of the module can be connect with the battery pack on vehicle with input direct-current
Electricity carries out the inversion of electric current using the inversion function of the power semiconductor chip 1 in the power semiconductor modular, and through output end
Output alternating current is connected to motor, and driving motor rotation, the modular structure is simple and occupancy arrangement space is small.
The preferred embodiment of the disclosure is described in detail in conjunction with attached drawing above, still, the disclosure is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical solution of the disclosure
Monotropic type, these simple variants belong to the protection scope of the disclosure.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, can be combined in any appropriate way, in order to avoid unnecessary repetition, the disclosure to it is various can
No further explanation will be given for the combination of energy.
In addition, any combination can also be carried out between a variety of different embodiments of the disclosure, as long as it is without prejudice to originally
Disclosed thought equally should be considered as disclosure disclosure of that.
Claims (11)
1. a kind of power semiconductor modular, which is characterized in that the module includes power semiconductor chip (1) and is connected to
The first heat-radiating substrate (2) and the second heat-radiating substrate (3), the module of power semiconductor chip (1) two sides further include first
Electrical interconnecting block (4) has conductive layer, the power half on first heat-radiating substrate (2) or second heat-radiating substrate (3)
Conductor chip (1) is connected by the first electrical interconnecting block (4) with the conductive layer.
2. power semiconductor modular according to claim 1, which is characterized in that the module includes power terminal (5), institute
It states power terminal (5) to be arranged on first heat-radiating substrate (2), the power semiconductor chip (1) passes through first electricity
Gas transfer block (4) is connected with the conductive layer of second heat-radiating substrate (3), and the power terminal (5) is electrical by second
Transfer block (6) is connected with the conductive layer.
3. power semiconductor modular according to claim 2, which is characterized in that the module further includes control terminal (7),
The power semiconductor chip (1) includes the first chip (11) and the second chip (12), first chip (11) and the second chip
(12) be respectively provided on first heat-radiating substrate (2), and respectively by the first electrical interconnecting block (4) with it is described
Conductive layer is connected, and first chip (11) passes through corresponding first electrical interconnecting block (4), the conductive layer and second electricity
Gas transfer block (6) is connected with the power terminal (5), and second chip (12) passes through bonding line (8) and the control terminal
(7) it is electrically connected.
4. power semiconductor modular according to claim 3, which is characterized in that first chip (11) is IGBT core
Piece, second chip (12) are FRD chip.
5. power semiconductor modular according to claim 3, which is characterized in that first heat-radiating substrate (2) has same
Side and spaced first conductive layer (21), the second conductive layer (22) and third conductive layer (23), first chip (11)
It is fixedly connected on first conductive layer (21) with second chip (12), the power terminal (5) is welded on described second
On conductive layer (22), the control terminal (7) is welded on the third conductive layer (23).
6. power semiconductor modular according to claim 1, which is characterized in that the power semiconductor chip (1) is more
A, multiple power semiconductor chip (1) is connected by the first electrical interconnecting block (4) with the conductive layer respectively.
7. power semiconductor modular described in any one of -6 according to claim 1, which is characterized in that the conductive layer and phase
Welding is all made of between the electrical interconnecting block answered and between the power semiconductor chip (1) and the electrical interconnecting block to connect
It connects.
8. power semiconductor modular described in any one of -6 according to claim 1, which is characterized in that the first heat dissipation base
Plate (2) and/or second heat-radiating substrate (3) are to cover resin of copper substrate, and the conductive layer covers resin of copper substrate by described in and covered
Copper sheet layer.
9. power semiconductor modular according to claim 1, which is characterized in that the module further includes plastic-sealed body (9), institute
Plastic-sealed body (9) are stated for carrying out molding to the module.
10. power semiconductor modular described in any one of -6 according to claim 1, which is characterized in that corresponding electrical turn
The material for connecing block is copper-molybdenum.
11. a kind of vehicle, which is characterized in that the vehicle includes power described in any one of the claims 1-10 half
Conductor module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920447732.3U CN209592033U (en) | 2019-04-03 | 2019-04-03 | Power semiconductor modular and vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920447732.3U CN209592033U (en) | 2019-04-03 | 2019-04-03 | Power semiconductor modular and vehicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209592033U true CN209592033U (en) | 2019-11-05 |
Family
ID=68375407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920447732.3U Active CN209592033U (en) | 2019-04-03 | 2019-04-03 | Power semiconductor modular and vehicle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209592033U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146096A (en) * | 2019-11-26 | 2020-05-12 | 通富微电子股份有限公司 | Double-sided heat dissipation semiconductor device and single-reflow soldering method thereof |
| CN112490233A (en) * | 2020-12-11 | 2021-03-12 | 广东汇芯半导体有限公司 | Intelligent power module and manufacturing method thereof |
-
2019
- 2019-04-03 CN CN201920447732.3U patent/CN209592033U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146096A (en) * | 2019-11-26 | 2020-05-12 | 通富微电子股份有限公司 | Double-sided heat dissipation semiconductor device and single-reflow soldering method thereof |
| CN112490233A (en) * | 2020-12-11 | 2021-03-12 | 广东汇芯半导体有限公司 | Intelligent power module and manufacturing method thereof |
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