CN108767022A - P-type crystal silicon solar cell and preparation method, photovoltaic module - Google Patents
P-type crystal silicon solar cell and preparation method, photovoltaic module Download PDFInfo
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- CN108767022A CN108767022A CN201810649228.1A CN201810649228A CN108767022A CN 108767022 A CN108767022 A CN 108767022A CN 201810649228 A CN201810649228 A CN 201810649228A CN 108767022 A CN108767022 A CN 108767022A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 133
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 132
- 239000010703 silicon Substances 0.000 title claims abstract description 129
- 239000013078 crystal Substances 0.000 title claims abstract description 114
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 82
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 72
- 239000011159 matrix material Substances 0.000 claims abstract description 61
- 238000000576 coating method Methods 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004806 packaging method and process Methods 0.000 claims description 10
- 239000002313 adhesive film Substances 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 25
- 230000005611 electricity Effects 0.000 abstract description 11
- 238000005215 recombination Methods 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 230000009467 reduction Effects 0.000 abstract description 6
- 238000006388 chemical passivation reaction Methods 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 102
- 230000000052 comparative effect Effects 0.000 description 21
- 239000010408 film Substances 0.000 description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 17
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 16
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 16
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000002002 slurry Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 238000010998 test method Methods 0.000 description 11
- 241000209094 Oryza Species 0.000 description 10
- 235000007164 Oryza sativa Nutrition 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 235000009566 rice Nutrition 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 description 6
- 235000008216 herbs Nutrition 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 210000002268 wool Anatomy 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 241000588731 Hafnia Species 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 229910004012 SiCx Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- -1 phosphonium ion Chemical class 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 244000089409 Erythrina poeppigiana Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 235000009776 Rathbunia alamosensis Nutrition 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of P-type crystal silicon solar cell and preparation method, photovoltaic modulies, belong to technical field of solar batteries.The P-type crystal silicon solar cell includes the front electrode set gradually, front passivation layer, emitter, P-type crystal silicon matrix, backside passivation layer and backplate, and the backside passivation layer includes the gallium oxide layer being in direct contact with the P-type crystal matrix.In the solar cell, the negative electrical charge carried using gallium oxide layer carries out chemical passivation to the back surface of P-type crystal silicon matrix and field is passivated, reduce the dangling bonds and minority carrier quantity of the silicon atom of P-type crystal silicon matrix back surface, to reduce the minority carrier recombination rate at P-type crystal silicon matrix back surface, improve the voltage and electric current of solar cell, promote the photoelectric conversion efficiency of solar cell, and then improve the output power of photovoltaic module, reduction degree electricity cost, improves the cost performance of photovoltaic generation.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of P-type crystal silicon solar cell and preparation side
Method, photovoltaic module.
Background technology
Photovoltaic generation directly converts solar energy into electrical energy, be it is a kind of cleaning, sustainability and cost performance it is relatively high
Generation mode.Crystal silicon solar energy battery is the important component of photovoltaic generating system, the light of crystal silicon solar energy battery
Photoelectric transformation efficiency has a major impact the electric cost of output power and degree of photovoltaic generation.
According to the Type division of the central crystal silicon substrate of crystal silicon solar energy battery, crystal silicon solar energy battery can be divided into
P-type crystal silicon solar cell and N-type crystalline silicon solar cell.Wherein P-type crystal silicon solar cell includes mainly successively
The front electrode of setting, front passivation layer, emitter, P-type crystal silicon matrix, backside passivation layer and backplate, the back side are blunt
The material for changing layer is usually silica, silicon oxynitride, silicon nitride etc..
Minority carrier recombination rate is higher in existing P-type crystal silicon solar cell, limits solar cell light
Photoelectric transformation efficiency.
Invention content
An embodiment of the present invention provides a kind of P-type crystal silicon solar cell and preparation method, photovoltaic modulies, for solving
The higher problem of minority carrier recombination rate in P-type crystal silicon solar cell at present.
Specifically, including technical solution below：
In a first aspect, an embodiment of the present invention provides a kind of P-type crystal silicon solar cells, including the front set gradually
Electrode, front passivation layer, emitter, P-type crystal silicon matrix, backside passivation layer and backplate, wherein the passivating back
Layer includes the gallium oxide layer being in direct contact with the P-type crystal matrix.
Optionally, the thickness of the gallium oxide layer is 1 nanometer~1000 nanometers.
Optionally, the thickness of the gallium oxide layer is 2 nanometers~150 nanometers.
Optionally, the thickness of the gallium oxide layer is 5 nanometers~60 nanometers.
Optionally, the backside passivation layer further includes the coating being arranged on the gallium oxide layer, the coating packet
At least one of silicon nitride layer, silicon oxynitride layer, silicon oxide layer are included, the thickness of the coating is at 200 nanometers or less.
Optionally, the backplate includes first electrode and second electrode, and the first electrode is in linear, and described second
The region other than the first electrode, and the second electrode and described first is arranged in the backside passivation layer in electrode
Electrode contacts；The backside passivation layer is provided with via, and the second electrode passes through the via and the P-type crystal silicon matrix
Contact.
Optionally, the cross sectional shape of the via is the polygon of round, linear, square, triangle or 5 or more number of edges
Shape etc..
Optionally, cross sectional shape is a diameter of 10 microns~200 microns of circular via, pitch of holes is 100 microns~
1000 microns.
Optionally, it is 20 microns~100 microns that cross sectional shape, which is the width of linear via, phase between multiple linear vias
Mutually parallel, the distance between two neighboring via is 500 microns~2000 microns.
Optionally, the whole backside passivation layers of the second electrode covering or the second electrode covering part institute
State backside passivation layer.
Optionally, the first electrode is formed by silver paste or is formed by silver-colored aluminum slurry.
Optionally, the second electrode is formed by aluminum slurry.
Optionally, the front passivation layer include in silicon nitride layer, silicon oxynitride layer, silicon oxide layer, silicon carbide layer extremely
The thickness of few one kind, the front passivation layer is 60 nanometers~120 nanometers.
Optionally, the front electrode is formed by silver paste.
Second aspect, an embodiment of the present invention provides a kind of preparation methods of P-type crystal silicon solar cell, including：
P-type crystal silicon matrix is provided；
The gallium oxide layer being in direct contact with the P-type crystal matrix is formed at the back side of the P-type crystal silicon matrix.
Optionally, the gallium oxide layer passes through Atomic layer deposition method, plasma enhanced chemical vapor deposition method, normal pressure
Chemical vapour deposition technique or Low Pressure Chemical Vapor Deposition are formed.
Optionally, described that the oxygen being in direct contact with the P-type crystal matrix is formed at the back side of the P-type crystal silicon matrix
Before changing gallium layer, the preparation method further includes：
The front of the P-type crystal silicon matrix is doped, emitter is formed；
The back surface of the P-type crystal silicon matrix is carried out smooth.
Optionally, described that the oxygen being in direct contact with the P-type crystal matrix is formed at the back side of the P-type crystal silicon matrix
After changing gallium layer, the preparation method further includes：
Front passivation layer is formed on the emitter, and coating is formed on the gallium oxide layer；
Printed back electrode and front electrode, and be sintered.
Optionally, it is formed on the gallium oxide layer between coating and the printed back electrode and front electrode, institute
Stating preparation method further includes：Via is formed in the backside passivation layer.
The third aspect, an embodiment of the present invention provides a kind of photovoltaic modulies, including cover board, the first packaging plastic set gradually
Film, battery strings, the second packaging adhesive film and backboard, the battery strings include multiple solar cells, and the solar cell is upper
The P-type crystal silicon solar cell stated.
Optionally, the material of first packaging adhesive film and second packaging adhesive film is EVA.
Optionally, the backboard is glass or TPT plates.
The advantageous effect of technical solution provided in an embodiment of the present invention is：
In the embodiment of the present invention, the oxidation that is in direct contact with P-type crystal silicon matrix by setting in P-type crystal silicon matrix
Gallium layer, the negative electrical charge carried using gallium oxide layer carries out chemical passivation to the back surface of P-type crystal silicon matrix and field is passivated, drop
The dangling bonds and minority carrier quantity of the silicon atom of the back surface of low P-type crystal silicon matrix, to reduce P-type crystal silicon matrix
Back surface at minority carrier recombination rate, improve the voltage and electric current of solar cell, promote the light of solar cell
Photoelectric transformation efficiency, and then the output power of photovoltaic module is improved, reduction degree electricity cost improves the cost performance of photovoltaic generation.Also,
Gallium oxide layer also has wider band gap and suitable refractive indices, is also beneficial to improve P-type crystal silicon solar cell
Performance.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described.
Fig. 1 is that a kind of middle gallium oxide layer set-up mode of P-type crystal silicon solar cell provided in an embodiment of the present invention shows
It is intended to；
Fig. 2 is a kind of structural schematic diagram of the full Al-BSF solar cells of crystalline silicon PERC provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of global back surface field backplate；
Fig. 4 is a kind of structural representation of the parts crystalline silicon PERC provided in an embodiment of the present invention Al-BSF solar cell
Figure；
Fig. 5 is the structural schematic diagram of local Al-BSF backplate.
Reference numeral in figure indicates respectively：
1 P-type crystal silicon matrix；
2 front passivation layers；
3 emitters；
4 backside passivation layers；
41 gallium oxide layers；
42 coatings；
5 backplates；
51 first electrodes；
52 second electrodes；
6 front electrodes；
X vias；
Y carries on the back electric field；
The thickness of T1 gallium oxide layers；
The thickness of the fronts T2 passivation layer；
The thickness of T3 coatings.
Specific implementation mode
To keep technical scheme of the present invention and advantage clearer, below in conjunction with attached drawing to embodiment of the present invention make into
One step it is described in detail.Unless otherwise defined, all technical terms used in the embodiment of the present invention all have and art technology
The normally understood identical meaning of personnel.
The photoelectric conversion efficiency for improving crystal silicon solar energy battery is to improve photovoltaic generation output power, reduction degree electricity cost
Effective way.Currently, one of an important factor for limitation single-unit crystal silicon solar energy battery electricity conversion is solar-electricity
The compound of minority carrier is buried in oblivion in pond.The compound of minority carrier buries in oblivion the stream that can cause solar array voltage and electric current
It loses, to reduce the photoelectric conversion efficiency of battery.There are a large amount of unsaturated dangling bonds in surface of crystalline silicon, is very serious multiple
Conjunction center.Passivation layer is set to be passivated silicon chip surface in silicon chip surface, the compound general of silicon chip surface minority carrier can be reduced
Rate is conducive to the electricity conversion for improving solar cell.
Based on the above, an embodiment of the present invention provides a kind of P-type crystal silicon solar cell and preparation method thereof, with
And the photovoltaic module based on the P-type crystal silicon solar cell.
Referring to Fig. 1, and combine Fig. 2 to Fig. 5, the P-type crystal silicon solar cell include the front electrode 6 set gradually,
Front passivation layer 2, emitter 3, P-type crystal silicon matrix 1, backside passivation layer 4 and backplate 5, wherein backside passivation layer 4
Include the gallium oxide (GaO contacted with P-type crystal matrix direct 1x) layer 41.
Since gallium oxide layer 41 carries negative electrical charge, chemical passivation can be carried out to P-type silicon surface and field is passivated, therefore in P
The gallium oxide layer 41 that the back side setting of type crystal silicon substrate 1 is in direct contact with P-type crystal silicon matrix 1, can effectively reduce P-type crystal
The dangling bonds and minority carrier quantity of the silicon atom of 1 back surface of silicon substrate, to reduce at 1 back surface of P-type crystal silicon matrix
Minority carrier recombination rate, improve the voltage and electric current of solar cell, promote the photoelectric conversion efficiency of solar cell,
And then the output power of photovoltaic module is improved, reduction degree electricity cost improves the cost performance of photovoltaic generation.Also, gallium oxide layer is also
With wider band gap and suitable refractive indices, it is also beneficial to improve the performance of P-type crystal silicon solar cell.
Further, as shown in Figure 1, in the embodiment of the present invention, the thickness of gallium oxide layer 41 can be received for 1 nanometer~1000
Rice (i.e. size in Fig. 1 indicated by T1), such as 1 nanometer, 5 nanometers, 10 nanometers, 15 nanometers, 20 nanometers, 25 nanometers, 30 nanometers,
35 nanometers, 40 nanometers, 45 nanometers, 50 nanometers, 55 nanometers, 60 nanometers, 65 nanometers, 70 nanometers, 75 nanometers, 80 nanometers, 85 nanometers,
90 nanometers, 95 nanometers, 100 nanometers, 150 nanometers, 200 nanometers, 250 nanometers, 300 nanometers, 350 nanometers, 400 nanometers, 450 receive
Rice, 500 nanometers, 550 nanometers, 600 nanometers, 650 nanometers, 700 nanometers, 750 nanometers, 800 nanometers, 850 nanometers, 900 nanometers,
950 nanometers, 1000 nanometers etc..Preferably, the thickness of gallium oxide layer 41 can be 2 nanometers~150 nanometers, it is highly preferred that oxidation
The thickness of gallium layer 41 can be 5 nanometers~60 nanometers.
Further, in the embodiment of the present invention, backside passivation layer 4 can also include the covering being arranged on gallium oxide layer 41
Layer 42, coating 42 may include silicon nitride (SiNx) layer, silicon oxynitride (SiOxNy) layer, silica (SiOx) layer, silicon carbide
(SiCxAt least one of), you can be individual silicon nitride layer, individual silicon oxynitride layer or individual silicon oxide layer,
It can also be two kinds in silicon nitride layer, silicon oxynitride layer, silicon oxide layer, silicon carbide layer or two or more be stacked.It covers
The whole thickness (i.e. the size indicated described in T3 in Fig. 1) of cap rock 42 can for 200 nanometers hereinafter, such as 200 nanometers, 190 receive
Rice, 180 nanometers, 170 nanometers, 160 nanometers, 150 nanometers, 140 nanometers, 130 nanometers, 120 nanometers, 110 nanometers, 100 nanometers, 90
Nanometer, 80 nanometers, 70 nanometers, 60 nanometers, 50 nanometers, 40 nanometers, 30 nanometers, 20 nanometers, 10 nanometers, 9 nanometers, 8 nanometers, 7 receive
Rice, 6 nanometers, 5 nanometers, 4 nanometers, 3 nanometers, 2 nanometers, 1 nanometer, 0.5 nanometer etc..It is each when coating 42 is laminated construction
The thickness of layer is not strict with, and can be configured as needed, as long as the thickness of the entirety of coating 42 is made to meet the requirements i.e.
It can.The setting of above-mentioned coating 42 can further be passivated (hydrogen diffusion) silicon chip.It should be noted that in the embodiment of the present invention,
Also it can be not provided with coating, directly using individual gallium oxide layer as backside passivation layer.
In the embodiment of the present invention, the concrete structure of backplate 5 can be according to the tool of battery in P-type crystal silicon solar cell
Body type is configured.
Illustratively, as shown in Figures 2 to 5, for PERC batteries (Passivated Emitter and Rear cell)
For, backplate 5 includes first electrode 51 and second electrode 52, wherein first electrode 51 is in linear, the setting of second electrode 52
Overleaf it is located at the region other than first electrode 51 on passivation layer 4, and second electrode 52 is contacted with first electrode 51；Meanwhile it carrying on the back
Face passivation layer 4 is provided with via X, and second electrode 52 is contacted by the via X of backside passivation layer 4 with P-type crystal silicon matrix 1.
Wherein, first electrode 51 is alternatively referred to as main electrode, solar energy when being prepared for conductive confluence and photovoltaic module
The series welding of battery, first electrode 51 can be arranged a plurality of, such as 2~4, can be mutually parallel between a plurality of first electrode 51, and
One electrode 51 could be provided as discontinuous linear electrode.First electrode 51 can be formed by silver paste, can also be formed by silver-colored aluminium paste, the
Two electrodes 52 can be formed by aluminium paste.
It should be noted that after overleaf via X is arranged in passivation layer 4, the slurry for being used to form second electrode 52 is printed
Overleaf on passivation layer 4, above-mentioned slurry can be sent out in high-temperature sintering process with 1 surface of P-type crystal silicon matrix exposed at via X
Raw to expand reaction formation back of the body electric field Y, the slurry that diffusion reaction does not occur plays the role of conducting, forms second electrode 52.It is with aluminium paste
The P+ silicon layers and silicon that diffusion reaction forms aluminium doping occur with 1 surface of P-type crystal silicon matrix exposed at via X for example, aluminium paste
Aluminium alloy, wherein P+ silicon layers (carrying on the back electric field Y) can enable band and bend the few son of repulsion in the distribution on surface, improve few sub- longevity
Life acts the effect for passivation of showing up,
Second electrode 52 can cover whole backside passivation layers 4 (as shown in Figures 2 and 3), also covering part backside passivation layer 4
(as shown in Figure 4 and Figure 5).For for the 52 covering part backside passivation layer 4 of second electrode the case where, second electrode 52 can will
One via X is all covered, and also can only cover the part of a via X.It is understood that 52 covering part of second electrode is carried on the back
The back side of the P-type crystal silicon solar cell of face passivation layer 4 can also absorb light, realize that transparent two sides, generating electricity on two sides have
Higher electricity conversion.
The cross sectional shape of via X can be round, linear (i.e. strip), square, triangle, number of edges are 5 or more
Polygon or other shapes.
For circular via, diameter can be 10 microns~200 microns (such as 10 microns, 20 microns, it is 30 micro-
Rice, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, 110 microns, 120 microns, 130 microns,
140 microns, 150 microns, 160 microns, 170 microns, 180 microns, 190 microns, 200 microns etc.), pitch of holes can be 100 micro-
Rice~1000 microns (such as 100 microns, 200 microns, 300 microns, 400 microns, 500 microns, 600 microns, 700 microns, 800
Micron, 900 microns, 1000 microns etc.).
For linear via, width can be 20 microns~100 microns (such as 20 microns, 30 microns, it is 40 micro-
Rice, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns etc.), length can be slightly less than P-type crystal silicon substrate
The length of side of body 1 (P-type crystal silicon matrix is generally square or has the square of chamfering).The length direction of linear via can be with
It is vertical with the length direction of first electrode 51.Linear via can be provided with multiple, and be mutually parallel between multiple linear vias,
The distance between two neighboring linear via can be 500 microns~2000 microns (such as 500 microns, 600 microns, it is 700 micro-
Rice, 800 microns, 900 microns, 1000 microns, 1100 microns, 1200 microns, 1300 microns, 1400 microns, 1500 microns, 1600
Micron, 1700 microns, 1800 microns, 1900 microns, 2000 microns).In the embodiment of the present invention, linear via could be provided as void
The form of line, i.e., linear via are discontinuous in the longitudinal direction.
For the via X of other cross sectional shapes, size can be determined according to actual conditions.
Further, in P-type crystal silicon solar cell provided in an embodiment of the present invention, front passivation layer 2 may include
Silicon nitride (SiNx) layer, silicon oxynitride (SiOxNy) layer, silica (SiOx) layer, silicon carbide (SiCxAt least one of) layer, i.e.,
Can be individual silicon nitride layer, individual silicon oxynitride layer, individual silicon oxide layer or individual silicon carbide layer can also
It is two kinds in silicon nitride layer, silicon oxynitride layer, silicon oxide layer and silicon carbide layer or two or more is stacked.Front passivation
The thickness (size as indicated by T2 in Fig. 1) of layer can be 60 nanometers~120 nanometers (such as 60 nanometers, 65 nanometers, 70 receive
Rice, 75 nanometers, 80 nanometers, 85 nanometers, 90 nanometers, 95 nanometers, 100 nanometers, 105 nanometers, 110 nanometers, 115 nanometers, 120 nanometers
Deng).It is understood that front passivation layer 2 not only the positive emitter 3 for being arranged in P-type crystal silicon matrix 1 is carried out it is blunt
Change, while also acting as the effect of antireflective.When front passivation layer 2 is laminated construction, each layer of thickness is not strict with,
It (such as needs of refractive index) can be configured as needed, as long as the thickness of the entirety of front passivation layer 2 is made to meet the requirements
?.
Furthermore, it is necessary to illustrate, in the embodiment of the present invention, P-type crystal silicon matrix 1 can be monocrystalline silicon, can also be
Polysilicon, resistivity can be 0.1 Ω of Ω cm~10 cm (such as 0.1 Ω cm, 0.2 Ω cm, 0.3 Ω cm, 0.4
Ω·cm、0.5Ω·cm、0.6Ω·cm、0.7Ω·cm、0.8Ω·cm、0.9Ω·cm、1Ω·cm、2Ω·cm、3
Ω cm, 4 Ω cm, 5 Ω cm, 6 Ω cm, 7 Ω cm, 8 Ω cm, 9 Ω cm, 10 Ω cm etc.).P-type crystal silicon
The emitter 3 of solar cell can be formed, the emitter formed after doping by adulterating group V element (including but not limited to phosphorus)
3 square resistance can be in 40 Ω/~200 Ω/ (such as 40 Ω/, 50 Ω/, 60 Ω/, 70 Ω/, 80
Ω/□、90Ω/□、100Ω/□、110Ω/□、120Ω/□、130Ω/□、140Ω/□、150Ω/□、160Ω/□、
170 Ω/, 180 Ω/, 190 Ω/, 200 Ω/ etc.), the square resistance in the different region of emitter 3 can be identical,
It can also be different.
It should also be noted that, P-type crystal silicon solar cell provided in an embodiment of the present invention can be understood as include：P
Type crystal silicon substrate 1 is arranged the emitter 3 in P-type crystal silicon matrix 1 positive (i.e. light-receiving surface), is arranged on emitter 3 just
Face passivation layer 2, the front electrode 6 being arranged on front passivation layer 2 are arranged at 1 back side of P-type crystal silicon matrix (i.e. shady face)
Backside passivation layer 4 and the backplate 5 being arranged on overleaf passivation layer 4.I.e. in P-type crystal silicon solar cell, P-type crystal
The front of silicon substrate 1 is disposed with emitter 3, front passivation layer 2 and front electrode 6, P-type crystal silicon matrix 1 from inside to outside
The back side be disposed with backside passivation layer 4 and backplate 5 from inside to outside.Wherein, backside passivation layer 4 includes and emitter 3
The gallium oxide layer 41 of contact can also include the coating 42 being arranged on gallium oxide layer 41.Front electrode 6 passes through front to be passivated
Layer 2 forms Ohmic contact with emitter 3.Backplate 5 may include first electrode 51 and second electrode 52, and first electrode 51 is in
Linear, for converging and component series welding, the area being located on overleaf passivation layer 4 other than first electrode 51 is arranged in second electrode 52
Domain, and second electrode 52 is contacted with first electrode 51；Backside passivation layer 4 is provided with via X, and second electrode 52 passes through via X and P
Type crystal silicon substrate 1 contacts.
The preparation method of the P-type crystal silicon solar cell of the embodiment of the present invention is illustrated below.
A kind of preparation method of P-type crystal silicon solar cell provided in an embodiment of the present invention includes the following steps：
Step S1 provides P-type crystal silicon matrix 1；
Step S2 forms the gallium oxide layer 41 being in direct contact with P-type crystal matrix 1 at the back side of P-type crystal silicon matrix 1.
As described above, the P-type crystal silicon solar-electricity being prepared using preparation method provided in an embodiment of the present invention
Chi Zhong, the gallium oxide layer 41 with negative electrical charge is directly contacted with the back surface of P-type crystal silicon matrix 1, to P-type crystal silicon matrix 1
Back surface carry out chemical passivation and field passivation, to reduce at 1 back surface of P-type crystal silicon matrix minority carrier recombination speed
Rate promotes the photoelectric conversion efficiency of solar cell, and then improves the output power of photovoltaic module, and reduction degree electricity cost improves
The cost performance of photovoltaic generation.
In the embodiment of the present invention, gallium oxide layer 41 can pass through Atomic layer deposition method (Atomic Layer
Deposition, ALD), plasma enhanced chemical vapor deposition method (Plasma Enhanced Chemical Vapor
Deposition, PECVD), aumospheric pressure cvd method (Atmospheric Chemical Vapor Deposition,
) or Low Pressure Chemical Vapor Deposition (Low Pressure Chemical Vapor Deposition, LPCVD) shape APCVD
At.After the deposition of gallium oxide layer 41 is completed, also need to carry out annealing steps.
Further, in the embodiment of the present invention, step S1 can specifically include：
Step S11 selects the p type single crystal silicon piece with suitable resistivity or p-type polysilicon piece as P-type crystal silicon substrate
Body 1.
Step S12, to P-type crystal silicon matrix 1 carry out cleaning and in the positive making herbs into wool of P-type crystal silicon matrix 1, to reduce P
1 positive reflectivity of type crystal silicon substrate.After making herbs into wool, the reflectivity of monocrystalline silicon sheet surface can 10%~18% (such as
10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18% etc.), the reflectivity on polysilicon chip surface can be 6%
~20% (such as 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%,
20% etc.).
Further, further comprising the steps of between step S1 and step S2 in the embodiment of the present invention：
1) P-N junction is prepared, i.e., is doped in the front of P-type crystal silicon matrix 1, emitter 3 is formed, is adulterated with P elements
For, specific preparation method can be boiler tube phosphorus diffusion, APCVD deposition phosphorosilicate glasses (PSG) or phosphonium ion injection etc..
2) smooth to the progress of the back surface of P-type crystal silicon matrix 1, the flat P-type crystal silicon matrix 1 of chemical solution can be passed through and carry on the back table
Hydrofluoric acid (aqueous solution of HF) cleaning silicon chip is used in combination suitably to reduce the specific surface area of 1 back surface of P-type crystal silicon matrix in face.Its
In, it can be aqueous slkali, including but not limited to tetramethyl hydrogen to carry out smooth chemical solution to 1 back surface of P-type crystal silicon matrix
Amine-oxides (TMAH) solution, sodium hydroxide (NaOH) solution, potassium hydroxide (KOH) etc., the concentration of aqueous slkali can as needed into
Row adjustment；May be acid solution, such as nitric acid (HNO3), hydrofluoric acid (HF) and sulfuric acid (H2SO4) mixed solution, mixing it is molten
Proportioning in liquid between the concentration of each acid solution and each acid solution can be also adjusted as needed.
Further, upon step s 2, further comprising the steps of in the embodiment of the present invention：
1) front passivation layer 2 is formed on emitter 3, forms coating 42 on gallium oxide layer 41, if front passivation
The material identical with 42 layers of use of covering of layer 2, the formation of front passivation layer 2 and the formation of coating 42 can be carried out at the same time.
2) printing of backplate 5 and front electrode 6 print, and carry out quick high-temp sintering later.Wherein, the temperature of sintering can
Think 600 DEG C~900 DEG C (such as 600 DEG C, 650 DEG C, 700 DEG C, 750 DEG C, 800 DEG C, 850 DEG C, 900 DEG C etc.), the time of sintering
Can be 10 seconds to 3 minutes, such as 10 seconds, 20 seconds, 30 seconds, 40 seconds, 60 seconds, 70 seconds, 80 seconds, 90 seconds, 100 seconds, 110 seconds, 120
Second, 130 seconds, 140 seconds, 150 seconds, 160 seconds, 170 seconds, 180 seconds etc..
For PERC batteries, after forming coating 42, also needs to carry out overleaf passivation layer 4 and form via X's
Step can form via X by laser or the method for chemical attack.The printing process of backplate 5, which then specifically includes, first to be printed
Brush is used to form the slurry of first electrode 51, republishes the slurry for being used to form second electrode 52.
Based on aforementioned p-type crystal silicon solar energy battery, an embodiment of the present invention provides a kind of photovoltaic module, the photovoltaic modulies
Including cover board, the first packaging adhesive film, battery strings, the second packaging adhesive film and the backboard set gradually, battery strings include multiple sun
Energy battery, wherein solar cell is the P-type crystal silicon solar cell that the embodiments of the present invention provide.
Due to being provided in P-type crystal silicon solar cell provided in an embodiment of the present invention table is carried on the back with P-type crystal silicon matrix
The gallium oxide layer that face is in direct contact carries out chemistry using the negative electrical charge that gallium oxide layer is carried to P-type crystal silicon matrix back surface
Passivation and field passivation, improve the photoelectric conversion efficiency of solar cell, therefore, using the P-type crystal silicon solar cell
There is photovoltaic module higher output power to improve the cost performance of photovoltaic generation to degree of reduction electricity cost.
In the embodiment of the present invention, cover board is glass plate, and the material of the first packaging adhesive film and the second packaging adhesive film is EVA (second
Alkene-acetate ethylene copolymer), backboard can be glass plate, or TPT (PVF/PET/PVF) plate.Wherein, when backboard is adopted
When with TPT plates, photovoltaic module further includes frame, filling gel in frame.
Below by taking PERC batteries as an example, to P-type crystal silicon solar cell provided in an embodiment of the present invention and its preparation side
Method is described further.
Embodiment 1
A kind of full Al-BSF solar cells of crystalline silicon PERC of gallium oxide passivation are present embodiments provided, such as Fig. 2 and Fig. 3
Shown, which includes by positive (i.e. the light-receiving surface of solar cell) to the back side (i.e. the shady face of solar cell)
Front electrode 6, front passivation layer 2, emitter 3, P-type crystal silicon matrix 1, backside passivation layer 4 and the back side electricity set gradually
Pole 5.
Wherein, P-type crystal silicon matrix 1 is the p-type that resistivity is 2.0 Ω cm, size is 156.75mm × 156.75mm
Monocrystalline silicon piece.
Backside passivation layer 4 includes the gallium oxide layer 41 being in direct contact with P-type crystal silicon matrix 1 and is arranged in gallium oxide layer
Nitridation silicon covering layer 42 on 41, the wherein thickness of gallium oxide layer 41 are 40 nanometers, and the thickness of nitridation silicon covering layer 42 is received for 70
Rice.
Backside passivation layer 4 offers 142 × 142 (i.e. every row 142, totally 142 row) circular via X, the hole of via X
Diameter is 50 μm, and the spacing (the distance between center of circle) of two neighboring via X is 1100 microns.
Backplate includes first electrode 51 and second electrode 52, and wherein first electrode 51 is in linear, for conductive confluence
It with the series welding of solar cell, is formed by the PV56x type silver pastes of Du Pont (Dupant) company, quantity is 4, and width is
1.6mm；Second electrode 52 is the aluminium electrode formed by the PV36x type aluminum slurries of Du Pont (Dupant) company, and the covering back side is blunt
Change the whole region other than first electrode 51 on layer 4, and second electrode 52 is contacted across via X with P-type crystal silicon matrix 1.
Front electrode 6 is grid line structure, is formed by congratulating Li Shi (Heraeus) SOL9621 type silver pastes, wherein main gate line 4
Root, 1.1 millimeters of width, secondary grid line 102,40 microns of width, 1.5 millimeters of spacing.
Front passivation layer 2 is silicon nitride layer, and thickness is 80 nanometers.
Emitter 3 is formed by boiler tube phosphorus diffusion, and square resistance is 100 Ω/ after doping.
The preparation method of solar cell provided in this embodiment is as follows：
Step 101, NaOH and H are utilized2O2Mixed aqueous solution (NaOH, H2O2And H2O is according to mass ratio 0.5%:1%:
98.5% ratio mixing) p type single crystal silicon piece is cleaned (scavenging period 2min), the hydrogen of mass concentration 3% is utilized later
Aqueous solution of sodium oxide is in the positive making herbs into wool of p type single crystal silicon piece, and after making herbs into wool, the positive reflectivity of p type single crystal silicon piece is 12%.
Step 102, the front of the p type single crystal silicon piece by the method for boiler tube phosphorus diffusion after making herbs into wool carries out phosphorus doping preparation
Emitter forms P-N junction.Wherein, the diffusion of boiler tube boron uses the L4511II-40/ZM type diffusion facilities of SevenStart companies,
Diffusion conditions are：With POCl3As phosphorus source, POCl is passed through into quartz ampoule at 820 DEG C3(being passed through time 20min), Zhi Houting
Only it is passed through POCl3And keep the temperature 20min at 840 DEG C.
Step 103, the p type single crystal silicon piece after diffusion is soaked in 70 DEG C, the TMAH solution that mass concentration is 20%
5min is steeped, HF aqueous cleaning silicon chips that are smooth, being later 10% with mass concentration are carried out to n type single crystal silicon piece back surface
2min。
Step 104, using PEALD methods in the backside deposition gallium oxide film of p type single crystal silicon piece, device therefor is Finland times
The 200 type atomic layer deposition thin film systems of TFS of Nike (Beneq) company, sedimentary condition are：Temperature is 75 DEG C, and pressure is
The volume flow of 0.25Torr, trimethyl gallium (TMGa) are 70sccm (standard state ml/min), O2Volume flow be
200sccm。
Step 105, using PECVD on the positive emitter of p type single crystal silicon piece and the gallium oxide film at the back side
Upper formation silicon nitride film, device therefor are the SINA type PECVD devices of ROTH&RAU companies, and sedimentary condition is：Temperature is 400
DEG C, pressure 0.25mBar, SiH4Volume flow be 100sccm, NH3Volume flow be 180sccm.
Step 106, laser trepanning in the gallium oxide/silicon nitride stack structure at the p type single crystal silicon piece back side is utilized.
Step 107, silk-screen printing is used to form the slurry of the first electrode in backplate, and screen process press used is
The Baccini speedy thinking types printing machines (similarly hereinafter) of Applied materials companies.
Step 108, silk-screen printing is used to form the slurry of the second electrode in backplate.
Step 109, silk-screen printing is used to form the slurry of front electrode.
Step 110, it is sintered at a temperature of 790 DEG C, sintering time is 10 seconds；Front metal silver part after sintering
It burns silicon nitride film and forms Ohmic contact with emitter, back side alumina particles and silicon substrate corresponding with via area form aluminium silicon
Alloy and Al-BSF.
The present embodiment is carried using I-V test methods (the CetisPV-XF2-PB type I-V testers of German Halm companies)
The performance of the solar cell of confession is tested (test condition is 25 DEG C, spectral conditions AM1.5), and result is：Open-circuit voltage
0.668V, short circuit current 9.71A, photoelectric conversion efficiency 20.73%.
Embodiment 2
A kind of parts crystalline silicon PERC Al-BSF solar cell of gallium oxide passivation is present embodiments provided, such as Fig. 3 institutes
Show, difference lies in backside passivation layer 4 has the structure of the solar cell with the structure of the solar cell of the offer of embodiment 1
Subregion is not covered by the second electrode 52 formed by aluminium paste.
Wherein, second electrode 52 is in line style, and totally 102, the width of every second electrode 52 is 70 microns, adjacent two articles the
52 distance is 1.1 millimeters between two electrodes, and second electrode 52 is vertical with for conductive confluence, the first electrode 51 of series welding.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.668V, short circuit current 9.78A, photoelectric conversion efficiency 20.83%.
Embodiment 3
Present embodiments provide a kind of parts crystalline silicon PERC Al-BSF solar cell of gallium oxide passivation, the present embodiment
Difference lies in solar cells provided in this embodiment for the solar cell that the solar cell of offer is provided with embodiment 2
The thickness of middle gallium oxide layer is 1 nanometer.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.647V, short circuit current 9.1A, photoelectric conversion efficiency 19.04%.
Embodiment 4
Present embodiments provide a kind of parts crystalline silicon PERC Al-BSF solar cell of gallium oxide passivation, the present embodiment
Difference lies in solar cells provided in this embodiment for the solar cell that the solar cell of offer is provided with embodiment 2
The thickness of middle gallium oxide layer is 80 nanometers.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.667V, short circuit current 9.7A, photoelectric conversion efficiency 20.60%.
Embodiment 5
Present embodiments provide a kind of parts crystalline silicon PERC Al-BSF solar cell of gallium oxide passivation, the present embodiment
Difference lies in solar cells provided in this embodiment for the solar cell that the solar cell of offer is provided with embodiment 2
The thickness of middle gallium oxide layer is 200 nanometers.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.666V, short circuit current 9.68A, photoelectric conversion efficiency 20.39%.
Embodiment 6
Present embodiments provide a kind of parts crystalline silicon PERC Al-BSF solar cell of gallium oxide passivation, the present embodiment
Difference lies in solar cells provided in this embodiment for the solar cell that the solar cell of offer is provided with embodiment 2
The thickness of middle gallium oxide layer is 500 nanometers.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.663V, short circuit current 9.51A, photoelectric conversion efficiency 19.48%.
Embodiment 7
Present embodiments provide a kind of parts crystalline silicon PERC Al-BSF solar cell of gallium oxide passivation, the present embodiment
Difference lies in solar cells provided in this embodiment for the solar cell that the solar cell of offer is provided with embodiment 2
The thickness of middle gallium oxide layer is 1000 nanometers.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.660V, short circuit current 9.52A, photoelectric conversion efficiency 18.82%.
Comparative example 1
This comparative example provides a kind of parts crystalline silicon PERC Al-BSF solar cell that gallium oxide layer not being arranged, this is right
Difference lies in the solar energy that this comparative example provides for the solar cell that the solar cell that ratio provides is provided with embodiment 2
Gallium oxide layer is not set in battery.When preparing solar cell, it is thin directly silicon nitride to be formed at the back side of p type single crystal silicon piece
Film.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.642V, short circuit current 8.50A, photoelectric conversion efficiency 17.29%.
Comparative example 2
This comparative example provides a kind of parts crystalline silicon PERC Al-BSF solar cell of zirconium oxide passivation, this comparative example
Difference lies in the solar cells that this comparative example provides for the solar cell that the solar cell of offer is provided with embodiment 2
It is middle to use zirconium oxide (ZrOx) film replacement gallium oxide film.When preparing solar cell, first at the back side of p type single crystal silicon piece
Zirconia film is formed, then forms silicon nitride film on zirconia film.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.658V, short circuit current 9.53A, photoelectric conversion efficiency 20.04%.
Comparative example 3
This comparative example provides a kind of parts crystalline silicon PERC Al-BSF solar cell of tantalum oxide passivation, this comparative example
Difference lies in the solar cells that this comparative example provides for the solar cell that the solar cell of offer is provided with embodiment 2
It is middle to use tantalum oxide (TaOx) film replacement gallium oxide film.When preparing solar cell, first at the back side of p type single crystal silicon piece
Tantalum oxide films are formed, then form silicon nitride film on tantalum oxide films.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.660V, short circuit current 9.63A, photoelectric conversion efficiency 20.32%.
Comparative example 4
This comparative example provides a kind of parts crystalline silicon PERC Al-BSF solar cell of hafnium oxide passivation, this comparative example
Difference lies in the solar cells that this comparative example provides for the solar cell that the solar cell of offer is provided with embodiment 2
It is middle to use hafnium oxide (HfOx) film replacement gallium oxide film.When preparing solar cell, first at the back side of p type single crystal silicon piece
Hafnia film is formed, then forms SiN on hafnia filmxFilm.
The performance of solar cell provided in this embodiment is surveyed according to the test method and test condition of embodiment 1
Examination, result are：Open-circuit voltage 0.665V, short circuit current 9.65A, photoelectric conversion efficiency 20.51%.
In following table 1, the performance test results of the solar cell of above example 1~7 and comparative example 1~4 are carried out
Summarize.
1 solar performance test result of table summarizes
| Serial number | Oxide type | Sull thickness | Open-circuit voltage | Short circuit current | Photoelectric conversion efficiency |
| Embodiment 1 | Gallium oxide | 40 nanometers | 0.668V | 9.71A | 20.73% |
| Embodiment 2 | Gallium oxide | 40 nanometers | 0.668V | 9.78A | 20.83% |
| Embodiment 3 | Gallium oxide | 1 nanometer | 0.647V | 9.1A | 19.04% |
| Embodiment 4 | Gallium oxide | 80 nanometers | 0.667V | 9.7A | 20.60% |
| Embodiment 5 | Gallium oxide | 200 nanometers | 0.666V | 9.68A | 20.39% |
| Embodiment 6 | Gallium oxide | 500 nanometers | 0.663V | 9.51A | 19.48% |
| Embodiment 7 | Gallium oxide | 1000 nanometers | 0.660V | 9.52A | 18.82% |
| Comparative example 1 | —— | —— | 0.642V | 8.50A | 17.29% |
| Comparative example 2 | Zirconium oxide | 40 nanometers | 0.658V | 9.53A | 20.04% |
| Comparative example 3 | Tantalum oxide | 40 nanometers | 0.660V | 9.63A | 20.32% |
| Comparative example 4 | Hafnium oxide | 40 nanometers | 0.665V | 9.65A | 20.51% |
Gallium oxide passivation provided in an embodiment of the present invention is can be seen that by the test data of above example and comparative example
P-type crystal silicon solar cell and gallium oxide layer is not set and replaces the p-type that is passivated of gallium oxide with other oxides
Crystal silicon solar energy battery is compared, and has higher photoelectric conversion efficiency.
The above is merely for convenience of it will be understood by those skilled in the art that technical scheme of the present invention, not limiting
The present invention.All within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in this
Within the protection domain of invention.
Claims (10)
1. a kind of P-type crystal silicon solar cell, including the front electrode (6), front passivation layer (2), the emitter that set gradually
(3), P-type crystal silicon matrix (1), backside passivation layer (4) and backplate (5), which is characterized in that the backside passivation layer
(4) include the gallium oxide layer (41) being in direct contact with the P-type crystal matrix (1).
2. solar cell according to claim 1, which is characterized in that the thickness of the gallium oxide layer (41) is 1 nanometer
~1000 nanometers.
3. solar cell according to claim 2, which is characterized in that the thickness of the gallium oxide layer (41) is 2 nanometers
~150 nanometers.
4. solar cell according to claim 1, which is characterized in that the backside passivation layer (4) further includes that setting exists
Coating (42) on the gallium oxide layer (41), the coating (42) includes silicon nitride layer, silicon oxynitride layer, silica
At least one of layer, silicon carbide layer, the thickness of the coating (42) is at 200 nanometers or less.
5. solar cell according to claim 1, which is characterized in that the backplate (5) includes first electrode
(51) and second electrode (52), the first electrode (51) are in linear, and the second electrode (52) is arranged in the passivating back
It is located at the region other than the first electrode (51) on layer (4), and the second electrode (52) connects with the first electrode (51)
It touches；
The backside passivation layer (4) is provided with via (X), and the second electrode (52) is brilliant by the via (X) and the p-type
Body silicon substrate (1) contacts.
6. solar cell according to claim 5, which is characterized in that the whole back ofs the body of second electrode (52) covering
Backside passivation layer (4) described in face passivation layer (4) or the second electrode (52) covering part.
7. solar cell according to claim 1, which is characterized in that the front passivation layer (2) include silicon nitride layer,
The thickness of at least one of silicon oxynitride layer, silicon oxide layer, silicon carbide layer, the front passivation layer (2) is 60 nanometers~120
Nanometer.
8. a kind of preparation method of P-type crystal silicon solar cell, which is characterized in that including：
P-type crystal silicon matrix (1) is provided；
The gallium oxide layer being in direct contact with the P-type crystal matrix (1) is formed at the back side of the P-type crystal silicon matrix (1)
(41)。
9. preparation method according to claim 8, which is characterized in that the gallium oxide layer (41) passes through Atomic layer deposition
Method, plasma enhanced chemical vapor deposition method, aumospheric pressure cvd method or Low Pressure Chemical Vapor Deposition are formed.
10. a kind of photovoltaic module, including the cover board, the first packaging adhesive film that set gradually, battery strings, the second packaging adhesive film and the back of the body
Plate, the battery strings include multiple solar cells, which is characterized in that the solar cell is any one of claim 1~7
The P-type crystal silicon solar cell.
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| CN201810649228.1A CN108767022A (en) | 2018-06-22 | 2018-06-22 | P-type crystal silicon solar cell and preparation method, photovoltaic module |
| US17/055,370 US11444212B2 (en) | 2018-06-22 | 2019-06-21 | Crystalline silicon solar cell and preparation method therefor, and photovoltaic module |
| PCT/CN2019/092374 WO2019242761A1 (en) | 2018-06-22 | 2019-06-21 | Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly |
| AU2019290813A AU2019290813B2 (en) | 2018-06-22 | 2019-06-21 | Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly |
| EP19822415.6A EP3783668B1 (en) | 2018-06-22 | 2019-06-21 | Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly |
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