CN209182398U - A kind of resistivity measurement platform of zone melting single-crystal silicon rod - Google Patents
A kind of resistivity measurement platform of zone melting single-crystal silicon rod Download PDFInfo
- Publication number
- CN209182398U CN209182398U CN201821603731.5U CN201821603731U CN209182398U CN 209182398 U CN209182398 U CN 209182398U CN 201821603731 U CN201821603731 U CN 201821603731U CN 209182398 U CN209182398 U CN 209182398U
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- Prior art keywords
- silicon rod
- probe
- slot
- type
- zone melting
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 19
- 238000004857 zone melting Methods 0.000 title claims abstract description 19
- 238000005259 measurement Methods 0.000 title claims abstract description 18
- 239000000523 sample Substances 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 230000007246 mechanism Effects 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 25
- 210000002615 epidermis Anatomy 0.000 abstract description 14
- 239000013078 crystal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Measurement Of Resistance Or Impedance (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model provides a kind of resistivity measurement platform of zone melting single-crystal silicon rod, including support base；The upper surface of support base is equipped with silicon rod stacker, and the upper surface of silicon rod stacker is equipped with the V-type through slot being transversely arranged, and the surface of V-type through slot is equipped with multiple Universal casters, and the ball vertex of Universal caster protrudes from the surface of V-type through slot；Four probes that can be moved horizontally and on vertical direction are installed, four probes are electrically connected with four-point probe ontology, and four probes are located at the top of V-type through slot in support base.The resistivity measurement platform of zone melting single-crystal silicon rod described in the utility model can easily adjust the position of silicon rod placed thereon, improve the convenience and accuracy of the resistivity of whole silicon rod epidermis of test.
Description
Technical field
The utility model belongs to zone-melted silicon single crystal production testing equipment field, more particularly, to a kind of zone melting single-crystal silicon rod
Resistivity measurement platform.
Background technique
Four-point probe is to be used to test the section resistivity after cutting single crystal bar in semiconductor monocrystal production process
And the test equipment of the silicon chip resistivity after single-crystal wafer, the technology in terms of test silicon wafer resistivity and monocrystalline section resistivity
It has been reached its maturity that, but as the quality of silicon single crystal production detection moves forward, the test of the epidermis resistivity of silicon single crystal rod is increasingly
Important, there is many problems if directlying adopt existing four probe and testing silicon rod epidermis, first is that due to
Need to test whole silicon rod epidermis when test, and silicon rod length is larger, existing probe moving range is inadequate, cannot achieve to whole
The test of the epidermis of a silicon rod, second is that in order to avoid test error is larger, it is ensured that measuring accuracy, the probe of four probes need to test
Smooth epidermis, once the out-of-flatness of test point position, it will shadow measuring accuracy, and silicon rod epidermis rises and falls there is height, therefore
Need to move adjustment silicon rod position, to adjust out smooth test point, it is ensured that probe can steadily place, and silicon rod weight compared with
Greatly, its position difficulty is adjusted.
Summary of the invention
In view of this, the utility model is directed to a kind of position that can easily adjust silicon rod placed thereon,
The resistivity of whole silicon rod epidermis can be easily tested, and the resistivity of the zone melting single-crystal silicon rod with good measuring accuracy is surveyed
Test stand, to solve the above problems.
In order to achieve the above objectives, the technical solution of the utility model is achieved in that
A kind of resistivity measurement platform of zone melting single-crystal silicon rod, including support base, the upper surface of the support base are equipped with
Silicon rod stacker, the upper surface of the silicon rod stacker are equipped with the V-type through slot being transversely arranged, the surface peace of the V-type through slot
Equipped with multiple Universal casters, the ball vertex of the Universal caster protrudes from the surface of the V-type through slot；In the support base
Four probes that can be moved horizontally and on vertical direction, four probe and four-point probe ontology are installed
Electrical connection, four probe are located at the top of the V-type through slot.
Further, the Universal caster is transversely equipped with two rows, two rows of Universal casters respectively symmetrically be installed on the V
Two inner surfaces of type through slot.
Further, the sliding rail being transversely arranged is installed in the support base, is installed on the sliding rail
There is the probe support frame that can be slided on the sliding rail, four probe is installed on the probe support frame.
Further, the rack gear being transversely arranged is installed in the support base, is equipped on the probe support frame
Horizontal drive motor is equipped with the gear being mutually engaged with the rack gear on the output shaft of the horizontal drive motor.
Further, the probe support frame is Telescopic rod structure, and four probe can be with the probe support frame
Flexible move in the vertical direction.
Further, the driving for driving and moving on the four probes vertical direction is installed on the probe support frame
Mechanism is equipped with infrared distance measuring device in four probe.
Compared with the existing technology, the resistivity measurement platform of zone melting single-crystal silicon rod described in the utility model has following excellent
Gesture:
(1) the silicon rod stacker upper surface of the resistivity measurement platform of zone melting single-crystal silicon rod described in the utility model is equipped with V
Type through slot, V-type through slot surface are equipped with multiple Universal casters, due to the effect of Universal caster, are placed on silicon rod stacker
Silicon rod can be realized movement horizontally under the promotion of the external force of very little, the convenient resistivity to whole silicon rod epidermis into
Row test, solving the problems, such as four probes, horizontally moving range is inadequate, four probes and silicon rod can be
Under the horizontal double action moved up, the resistivity of whole silicon rod epidermis can be easily tested；The structure of V-type through slot, can
Stable accepts silicon rod, and silicon rod is avoided to tumble in the longitudinal direction；
(2) the silicon rod stacker upper surface of the resistivity measurement platform of zone melting single-crystal silicon rod described in the utility model is equipped with V-type
Through slot, V-type through slot surface is equipped with multiple Universal casters, and due to the effect of Universal caster, silicon rod placed thereon can be
Under the action of external force, the rotation in circumferential direction is realized centered on the axis of oneself, facilitates four probes circumferential to silicon rod epidermis
The test of upper different location；Since the presence of Universal caster can be adjusted easily in the case where test point epidermis out-of-flatness
Silicon rod position, and then adjust out smooth test point, it is ensured that probe can be placed steadily, and test error is avoided, it is ensured that test essence
Degree.
Detailed description of the invention
The attached drawing for constituting a part of the utility model is used to provide a further understanding of the present invention, this is practical new
The illustrative embodiments and their description of type are not constituteed improper limits to the present invention for explaining the utility model.?
In attached drawing:
Fig. 1 is the structural schematic diagram of the resistivity measurement platform of zone melting single-crystal silicon rod described in the utility model embodiment.
Description of symbols:
1- support base；2- silicon rod stacker；3-V type through slot；4- Universal caster；Tetra- probe of 5-；6- sliding rail；
7- probe support frame.
Specific embodiment
It should be noted that in the absence of conflict, the feature in the embodiments of the present invention and embodiment can
To be combined with each other.
In the description of the present invention, it should be understood that term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of describing the present invention and simplifying the description, rather than indicate
Or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot understand
For limitations of the present invention.In the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or two
More than a.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " is pacified
Dress ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be directly connected, can also indirectly connected through an intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, on being understood by concrete condition
State the concrete meaning of term in the present invention.
The utility model will be described in detail below with reference to the accompanying drawings and embodiments.
As shown in Figure 1, a kind of resistivity measurement platform of zone melting single-crystal silicon rod, including support base 1；Support base 1 it is upper
End face is equipped with silicon rod stacker 2, and the upper surface of silicon rod stacker 2 is equipped with the V-type through slot 3 being transversely arranged, and V-type through slot 3 is used to
Accept silicon rod；The surface of V-type through slot 3 is equipped with multiple Universal casters 4, and the ball vertex of Universal caster 4 protrudes from V-type through slot 3
Surface, when silicon rod is placed in V-type through slot 3, silicon rod is actually to be accepted by the part outstanding of Universal caster 4；It is preferred that
, Universal caster 4 is transversely equipped with two rows of, two inner surfaces for being installed on V-type through slot 3 of two rows of Universal casters 4 respectively symmetrically,
Play the role of accepting silicon rod；
Four probes 5 that can be moved horizontally and on vertical direction, four probes are also equipped in support base 1
5 are electrically connected with four-point probe ontology, and four probes 5 are located at the top of V-type through slot 3；Four probes 5 are lateral and perpendicular
There are many implementations that histogram moves up: the sliding rail 6 being transversely arranged and transversely is such as installed in support base 1
The rack gear of setting is equipped with probe support frame 7 on sliding rail 6, horizontal drive motor is equipped on probe support frame 7, laterally
The gear being mutually engaged with rack gear is installed on the output shaft of driving motor, probe branch can be realized by the cooperation of wheel and rack
Movement of the support 7 in the transverse direction on sliding rail 6, and four probes 5 are installed on probe support frame 7；And vertical direction
On movement, then probe support frame 7 being arranged to Telescopic rod structure, (specific structure of telescopic rod belongs to the prior art herein
Do not repeat them here), by adjusting the telescopic height of probe support frame 7, realize the movement of four probes 5 in the vertical direction,
The driving mechanism that can be moved in the vertical direction by installing four probes 5 of driving on probe support frame 7, in four probes
Infrared distance measuring device is installed on probe 7, realizes the automatic adjustment of four probes, 5 position in the vertical direction.
The course of work of the resistivity measurement platform of zone melting single-crystal silicon rod described in the utility model is as follows:
Silicon rod to be measured is placed in V-type through slot 3, the relative position of adjustment four probe 5 and silicon rod, to silicon rod epidermis
The test for carrying out resistivity can be adjusted out when silicon rod epidermis out-of-flatness by pushing silicon rod to make silicon rod rotation in its circumferential direction
One smooth test point, to avoid test error, it is ensured that test it is accurate.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Within the spirit and principle of utility model, any modification, equivalent replacement, improvement and so on should be included in the utility model
Protection scope within.
Claims (6)
1. a kind of resistivity measurement platform of zone melting single-crystal silicon rod, including support base (1), it is characterised in that: the support base
(1) upper surface is equipped with silicon rod stacker (2), and the upper surface of the silicon rod stacker (2) is equipped with the V-type through slot being transversely arranged
(3), the surface of the V-type through slot (3) is equipped with multiple Universal casters (4), and the ball vertex of the Universal caster (4) protrudes from
The surface of the V-type through slot (3)；Four spies that can be moved horizontally and on vertical direction are installed on the support base (1)
Needle is popped one's head in (5), and four probe (5) is electrically connected with four-point probe ontology, and four probe (5) is located at described
The top of V-type through slot (3).
2. a kind of resistivity measurement platform of zone melting single-crystal silicon rod according to claim 1, it is characterised in that: the universal rolling
Pearl (4) is transversely equipped with two rows, the two interior tables for being installed on the V-type through slot (3) of two rows of Universal casters (4) respectively symmetrically
Face.
3. a kind of resistivity measurement platform of zone melting single-crystal silicon rod according to claim 1 or 2, it is characterised in that: the branch
The sliding rail (6) being transversely arranged is installed in support pedestal (1), being equipped on the sliding rail (6) can be in the sliding
The probe support frame (7) slided on track (6), four probe (5) are installed on the probe support frame (7).
4. a kind of resistivity measurement platform of zone melting single-crystal silicon rod according to claim 3, it is characterised in that: the support bottom
The rack gear being transversely arranged is installed on seat (1), horizontal drive motor, the transverse direction are installed on the probe support frame (7)
The gear being mutually engaged with the rack gear is installed on the output shaft of driving motor.
5. a kind of resistivity measurement platform of zone melting single-crystal silicon rod according to claim 4, it is characterised in that: the probe branch
Support (7) be Telescopic rod structure, four probe (5) can with the probe support frame (7) it is flexible in the vertical direction
It is mobile.
6. a kind of resistivity measurement platform of zone melting single-crystal silicon rod according to claim 4, it is characterised in that: the probe branch
The driving mechanism for driving and moving on the four probes vertical direction is installed, on four probe (5) on support (7)
Infrared distance measuring device is installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821603731.5U CN209182398U (en) | 2018-09-29 | 2018-09-29 | A kind of resistivity measurement platform of zone melting single-crystal silicon rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821603731.5U CN209182398U (en) | 2018-09-29 | 2018-09-29 | A kind of resistivity measurement platform of zone melting single-crystal silicon rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209182398U true CN209182398U (en) | 2019-07-30 |
Family
ID=67360623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821603731.5U Active CN209182398U (en) | 2018-09-29 | 2018-09-29 | A kind of resistivity measurement platform of zone melting single-crystal silicon rod |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209182398U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047383A (en) * | 2021-11-02 | 2022-02-15 | 中环领先半导体材料有限公司 | Automatic testing equipment and method for resistivity of single crystal silicon rod |
-
2018
- 2018-09-29 CN CN201821603731.5U patent/CN209182398U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047383A (en) * | 2021-11-02 | 2022-02-15 | 中环领先半导体材料有限公司 | Automatic testing equipment and method for resistivity of single crystal silicon rod |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191213 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring road No. 12 in Haitai) Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |