CN114047383A - Automatic testing equipment and method for resistivity of single crystal silicon rod - Google Patents
Automatic testing equipment and method for resistivity of single crystal silicon rod Download PDFInfo
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- CN114047383A CN114047383A CN202111291503.5A CN202111291503A CN114047383A CN 114047383 A CN114047383 A CN 114047383A CN 202111291503 A CN202111291503 A CN 202111291503A CN 114047383 A CN114047383 A CN 114047383A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 106
- 238000012360 testing method Methods 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 59
- 239000000428 dust Substances 0.000 claims abstract description 52
- 238000005498 polishing Methods 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 230000007246 mechanism Effects 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 238000010521 absorption reaction Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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Abstract
The invention provides automatic test equipment for resistivity of a single crystal silicon rod, which comprises a test frame, wherein a test board is arranged on the test frame, a plurality of groups of crystal rod supporting modules for supporting the single crystal silicon rod are fixedly arranged on the test board, and a scanning module for measuring the diameter of the single crystal silicon rod is arranged on the test board in a sliding manner; the test bench is fixedly provided with a moving mechanism, and the moving mechanism is fixedly provided with a polishing dust absorption module for polishing and absorbing dust of the monocrystalline silicon rod and a resistivity test module for testing the resistivity of the monocrystalline silicon rod. The automatic testing equipment and the method for the resistivity of the silicon single crystal rod can automatically detect the temperature and the resistivity of the silicon single crystal rod clamped on the test bed, adopt an automatic measuring method, reduce the error of artificial testing, have high detection precision and short time consumption, can be automatically controlled, reduce the artificial participation and improve the testing efficiency, and are suitable for full-automatic detection of a processing workshop of a silicon single crystal rod assembly line.
Description
Technical Field
The invention belongs to the field of single crystal silicon rod detection equipment, and particularly relates to automatic single crystal silicon rod resistivity testing equipment and method.
Background
In the field of semiconductor silicon single crystal manufacturing, the skin resistivity of a silicon single crystal rod is one of very critical parameters, and whether the resistivity is in a qualified range directly influences the resistivity of a silicon wafer. Because the resistivity of the silicon wafer depends on the control of the resistivity of the single crystal silicon rod, it is independent of the wafer processing process of the single crystal silicon rod. In the prior art, a method for testing the skin resistivity of a silicon single crystal rod generally comprises the following steps: and manually polishing the lime skin to remove an oxide layer, and manually adjusting the four-probe knob to test the resistivity of the skin. The prior testing technology for measuring the resistivity of the single crystal silicon rod has the following defects: the manual measurement of the skin resistivity of the silicon single crystal rod can cause uneven polished test areas and introduce manual test errors. Through the integrated optimization of the testing equipment, the manual testing error can be reduced, the automation degree is improved, the fluctuation of the surface resistivity of the silicon single crystal rod is reduced, the important technical problem of the growth of the silicon single crystal is solved, and the qualification condition of the resistivity of the silicon wafer is directly influenced by the accuracy of the resistivity test. Therefore, the method has very important application value for accurately and quickly measuring the skin resistivity of the monocrystalline silicon rod to control the silicon slice resistivity of the semiconductor material.
Disclosure of Invention
In view of the above, the present invention is directed to provide an automatic testing apparatus and method for resistivity of a single crystal silicon rod, so as to solve the problems that when the resistivity of a skin of the single crystal silicon rod is measured, a polished testing area is uneven and uneven, and a manual testing error is introduced.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
in a first aspect, the automatic test equipment for the resistivity of the single crystal silicon rod comprises a test frame, wherein a test board is arranged on the test frame, a plurality of groups of crystal rod supporting modules for supporting the single crystal silicon rod are fixedly arranged on the test board, and a scanning module for measuring the diameter of the single crystal silicon rod is arranged on the test board in a sliding manner; the test bench is fixedly provided with a moving mechanism, and the moving mechanism is fixedly provided with a polishing dust absorption module for polishing and absorbing dust of the monocrystalline silicon rod and a resistivity test module for testing the resistivity of the monocrystalline silicon rod.
Furthermore, a plurality of groups of crystal bar supporting modules are transversely arranged, and gaps corresponding to fork teeth of the crystal bar transport cart are reserved between each group of crystal bar supporting modules;
each group of crystal bar supporting modules comprises a supporting frame, the supporting frame is of a U-shaped structure and is fixedly arranged on the test board, two groups of rollers are assembled and arranged on the supporting frame, a gap for placing a single crystal silicon bar is reserved between the two groups of rollers, and the outer layer of each roller is coated with a rubber sheet;
a temperature sensor for detecting the monocrystalline silicon rod and a material sensor for detecting the existence of the monocrystalline silicon rod are fixedly arranged on the inner side wall of the support frame.
Furthermore, be equipped with two sets of spouts on being located the testboard of crystal bar support module both sides, it is provided with scanning module to slide in the spout, scanning module includes the sideslip sharp module, the fixed bottom that sets up at the testboard of sideslip sharp module, the sliding is provided with the installing support that removes along the spout on the sideslip sharp module, fixed mounting has two sets of cylinders on the installing support, the equal fixedly connected with diameter sensor of output shaft end of cylinder, two sets of diameter sensor are located the both sides of single crystal silicon rod.
Furthermore, the moving mechanism comprises two groups of parallel transverse straight line modules, a first longitudinal straight line module and a second longitudinal straight line module are arranged on the two groups of transverse straight line modules in a sliding mode, the polishing dust collection module is fixedly installed on the first longitudinal straight line module through the first fixing support, and the resistivity testing module is fixedly installed on the second longitudinal straight line module through the second fixing support.
Further, the polishing and dust removing module comprises a supporting plate, the supporting plate is fixedly arranged on a first fixing support, two groups of dust collecting pipes are fixedly arranged on the supporting plate and connected with a dust collecting device, a gap is reserved between the two groups of dust collecting pipes, two groups of linear bearings are fixedly arranged in the gap, guide rods are arranged in the linear bearings in a sliding mode and comprise sliding portions, the sliding portions are correspondingly arranged in the linear bearings, limiting portions used for preventing the guide rods from being separated from the linear bearings are arranged at the top ends of the sliding portions, mounting pieces are fixedly arranged at the bottom ends of the sliding portions and are of U-shaped structures, and oilstones used for polishing the surfaces of the monocrystalline silicon rods are fixedly arranged in the mounting pieces;
the sliding part is sleeved with a spring, and the spring is located between the mounting part and the supporting plate.
Further, a protective cover is fixedly arranged above the test board, an opening is formed in one side of the protective cover, and a light curtain is installed at the opening;
and a guide strip for positioning the single crystal silicon rod transport vehicle is fixedly arranged on the test frame positioned at the side of the opening of the protective cover.
In a second aspect, an automated testing method applied to the automated testing equipment for resistivity of the single crystal silicon rod in the first aspect specifically includes the following steps: s1, feeding; transporting the monocrystalline silicon rod to the crystal rod supporting module by using a monocrystalline silicon rod transport vehicle;
s2, measuring the temperature; after the material sensor detects that the single crystal silicon rod is placed in place, the temperature sensor detects the temperature of the single crystal silicon rod and records temperature data;
s3, scanning the crystal; controlling the transverse moving linear module to move, measuring the diameter and the equal-diameter length of the single crystal silicon rod by the scanning module, and recording data;
s4, polishing and dust collection; controlling the moving mechanism, polishing the surface of the single crystal silicon rod by the polishing and dust collection module, and collecting dust of the polished impurities by a dust collection device;
s5, measuring resistivity; controlling the moving mechanism, and measuring the resistivity and the conductive type of the single crystal silicon rod by the resistivity testing module;
s6, printing a label; after the detection is finished, the system automatically prints the label, and manually attaches the label to the silicon single crystal rod;
s7, blanking; and taking away the monocrystalline silicon rod by using a crystal rod transport vehicle.
Further, step S3 specifically includes the following steps: s301, manually rotating the single crystal silicon rod, selecting a polishing bus of the single crystal silicon rod, and manually inputting the diameter specification of the single crystal silicon rod;
s302, manually pressing a start button, starting the equipment to operate, and enabling a light curtain to take effect;
s303, the console controls the transverse moving linear module to move, the position of the diameter sensor is changed, the upper position of the single crystal silicon rod is automatically detected, and when the detection reaches a preset value, an equal-diameter starting point is recorded; when the situation that the distance is reduced from the preset value is detected, starting to record the equal-diameter end point;
s304, the system calculates the diameter and the equal diameter length of the crystal bar through a formula and records corresponding data.
Further, step S4 specifically includes the following steps: s401, the console controls the transverse linear module to translate and controls the longitudinal linear module to lift, and the polishing position is controlled by a program or manually recorded with data;
s402, pressing the oilstone down on the surface of the single crystal silicon rod, aligning the prefabricated polishing bus, polishing the single crystal silicon rod, and meanwhile, enabling the dust suction device to suck dust to impurities through the dust suction pipe to prevent environment pollution.
Further, step S5 specifically includes the following steps: s501, the console controls the transverse linear module to translate and controls the longitudinal linear module II to lift, and the measuring position is controlled by a program or manually recorded with data;
s502, controlling a cylinder of the resistivity testing module to press the surface of the silicon single crystal rod by using a resistivity probe and a P/N type testing pen respectively, measuring the resistivity and the P/N pole type number of the silicon single crystal rod, and recording the measurement data.
Compared with the prior art, the automatic test equipment and method for the resistivity of the silicon single crystal rod have the following beneficial effects:
the automatic testing equipment and the method for the resistivity of the silicon single crystal rod can automatically detect the temperature and the resistivity of the silicon single crystal rod clamped on the test bed, adopt an automatic measuring method, reduce the error of artificial testing, have high detection precision and short time consumption, can be automatically controlled, reduce the artificial participation and improve the testing efficiency, and are suitable for full-automatic detection of a processing workshop of a silicon single crystal rod assembly line.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate an embodiment of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of a first angular configuration of an apparatus for automated resistivity testing of a single crystal silicon rod according to an embodiment of the present invention;
FIG. 2 is a schematic view of a second angular configuration of an apparatus for automated resistivity measurement of a single crystal silicon rod according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a first part of a detailed structure of an apparatus for automatically testing resistivity of a single crystal silicon rod according to an embodiment of the present invention;
FIG. 4 is a second partial detailed structural schematic diagram of an automated testing equipment structure for resistivity of a single crystal silicon rod according to an embodiment of the invention.
Description of reference numerals:
1-a test jig; 101-a guide bar; 2-a test bench; 201-a chute; 3-a crystal bar support module; 301-a support frame; 302-a drum; 303-temperature measuring sensor; 304-a material sensor; 4-a scanning module; 401-traversing the linear module; 402-a mounting bracket; 403-a cylinder; 404-diameter sensor; 5-a moving mechanism; 501-transverse straight line module; 502-longitudinal straight line module one; 503-a second longitudinal linear module; 6-polishing the dust collection module; 601-a support plate; 602-a dust suction pipe; 603-linear bearings; 604-a guide bar; 605-a mount; 606-oilstone; 7-resistivity test module; 8, fixing a first support; 9-fixing a second bracket; 10-single crystal silicon rod.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
Referring to fig. 1 and 2, an embodiment of the present invention provides an automatic testing apparatus for resistivity of a single crystal silicon rod, including a testing frame 1, wherein the testing frame 1 is provided with a testing table 2, the testing table 2 is fixedly provided with a plurality of groups of crystal rod supporting modules 3 for supporting the single crystal silicon rod 10, and the testing table 2 is slidably provided with a scanning module 4 for measuring a diameter of the single crystal silicon rod 10; a moving mechanism 5 is fixedly arranged on the test board 2, and a polishing dust absorption module 6 for polishing and absorbing dust of the monocrystalline silicon rod 10 and a resistivity test module 7 for testing the resistivity of the monocrystalline silicon rod 10 are fixedly arranged on the moving mechanism 5;
this equipment is connected with the control cabinet, and operating personnel passes through the operation of this equipment of control cabinet control, and the control cabinet that this technical scheme adopted is current equipment, and this patent application does not improve it, consequently, does not give further details again.
The crystal bar supporting modules 3 are transversely arranged, gaps corresponding to fork teeth of the crystal bar transport cart are reserved between each group of crystal bar supporting modules 3, the crystal bar supporting modules 3 are arranged according to the fork tooth structure of the crystal bar transport cart, and the fork teeth of the transport cart are avoided at the gaps;
as shown in fig. 4, each group of the ingot supporting modules 3 includes a supporting frame 301, the supporting frame 301 is a U-shaped structure, the supporting frame 301 is fixedly installed on the test table 2, two groups of rollers 302 are installed on the supporting frame 301 in an assembling manner, a gap for placing the single crystal silicon rod 10 is left between the two groups of rollers 302, and the outer layer of the rollers 302 is coated with a rubber (or made of tetrafluoro or nylon material) to prevent the surface layer of the single crystal silicon rod 10 from being damaged;
fixed mounting has temperature sensor 303 and the material sensor 304 that detects single crystal silicon rod 10 of detecting single crystal silicon rod 10 on the support frame 301 inside wall, temperature sensor 303 and material sensor 304 all are connected with the control unit electricity in the control cabinet, when measuring the temperature within 23 degrees +/-5 degrees, the system records temperature data, when measuring the temperature outside 23 degrees +/-5 degrees, equipment reports to the police, temperature sensor 303 adopts DS18B20 model temperature sensor, temperature sensor 303 and material sensor 304 are the field purchase, this patent application does not do further the repeated description.
Two groups of sliding grooves 201 are formed in the test bench 2 positioned on two sides of the crystal bar supporting module 3, the scanning module 4 is arranged in the sliding grooves 201 in a sliding mode, the scanning module 4 comprises a transverse moving linear module 401, the transverse moving linear module 401 is fixedly arranged at the bottom end of the test bench 2, an installation support 402 which moves along the sliding grooves 201 is arranged on the transverse moving linear module 401 in a sliding mode, two groups of air cylinders 403 are fixedly arranged on the installation support 402, the output shaft ends of the air cylinders 403 are fixedly connected with diameter sensors 404, and the two groups of diameter sensors 404 are positioned on two sides of the crystal bar 10; through setting up sideslip sharp module 401, drive installing support 402 through drive sideslip sharp module 401 and remove, utilize the diameter sensor 404 of single crystal silicon rod 10 both sides to carry out diameter measurement to single crystal silicon rod 10, sideslip sharp module 401 and diameter sensor 404 that this technical scheme adopted are field purchase, are prior art, and this patent application does not relate to the improvement to sideslip sharp module 401 and diameter sensor 404.
Moving mechanism 5 includes two sets of parallel arrangement's horizontal sharp module 501, it is provided with vertical sharp module 502 and vertical sharp module two 503 to slide on two sets of horizontal sharp module 501, dust absorption module 6 of polishing passes through a fixed bolster 8 fixed mounting on vertical sharp module 502, resistivity test module 7 passes through two 9 fixed mounting of fixed bolster on vertical sharp module two 503, horizontal sharp module 501 that this technical scheme adopted, vertical sharp module 502 and vertical sharp module two 503 are lead screw and nut complex mechanical structure, drive the lead screw through servo motor, this mechanical structure is present mature technique, and simultaneously, also be field purchase, this patent application does not make further unnecessary.
As shown in fig. 3, the polishing and dust removing module includes a supporting plate 601, the supporting plate 601 is fixedly disposed on a first fixing support 8, two sets of dust suction pipes 602 are fixedly mounted on the supporting plate 601, the two sets of dust suction pipes 602 are connected with a dust suction device, the dust suction device is mounted at the bottom of the test bed, a gap is left between the two sets of dust suction pipes 602, two sets of linear bearings 603 are fixedly disposed in the gap, a guide rod 604 is slidably disposed in the linear bearings 603, the guide rod 604 includes a sliding portion, the sliding portion is correspondingly disposed in the linear bearings 603, a limiting portion for preventing the guide rod 604 from being separated from the linear bearings 603 is disposed at the top end of the sliding portion, a mounting member 605 is fixedly disposed at the bottom end of the sliding portion, the mounting member 605 is a U-shaped structure, and an oilstone 606 for polishing the surface of the single crystal silicon rod 10 is fixedly disposed in the mounting member 605; by controlling the first longitudinal linear module 502, the driving motor of the first longitudinal linear module 502 drives the polishing and dust removal module to reach a position to be polished, the monocrystalline silicon rod 10 is polished by using an oilstone 606 arranged on the polishing and dust removal module, and a guide rod 604 arranged on the polishing and dust removal module is matched with a spring to play a role in buffering, so that the oilstone 606 is prevented from being in rigid contact with the monocrystalline silicon rod 10;
the sliding part is sleeved with a spring which is positioned between the mounting part 605 and the supporting plate 601;
the polishing and dedusting module is used for mechanically polishing the oxide ash skin of the silicon single crystal rod 10 and dedusting ash so as to achieve the leveling, uniformity and tidiness of a test area.
The resistivity test module 7 comprises a resistivity probe and a P/N type test pen, the resistivity and the conductive type of the single crystal silicon rod 10 are measured by controlling the resistivity probe and the P/N type test pen to extend out through the air cylinder 403, the resistivity test module 7 is an existing mature device, the resistivity test module is not improved in the application, and the specific structure is not further described.
A protective cover is fixedly arranged above the test board 2, an opening is formed in one side of the protective cover, and a light curtain is arranged at the opening;
and a guide bar 101 for positioning a transport vehicle for the single crystal silicon rod 10 is fixedly arranged on the test frame 1 positioned at the opening side of the protective cover.
The embodiment of the invention also provides an automatic testing method applied to the automatic testing equipment for the resistivity of the single crystal silicon rod as set forth in any one of claims 1 to 6, which specifically comprises the following steps: s1, feeding; the monocrystalline silicon rod 10 is transported to the crystal rod supporting module 3 by using the monocrystalline silicon rod 10 transport vehicle, the room temperature is adjusted to 23 +/-5 ℃, and the relative humidity is adjusted to be less than or equal to 65%;
s2, measuring the temperature; after the material sensor 304 detects that the single crystal silicon rod 10 is placed in place, the temperature sensor 303 detects the temperature of the single crystal silicon rod 10 and records temperature data;
s3, scanning the crystal; controlling the transverse moving linear module 401 to move, measuring the diameter and the equal-diameter length of the single crystal silicon rod 10 by the scanning module 4, and recording data;
s4, polishing and dust collection; controlling the moving mechanism 5, and respectively polishing the surfaces of the monocrystalline silicon rods 10 by the polishing and dust collection module 6, and simultaneously collecting dust of polished impurities by a dust collection device;
s5, measuring resistivity; controlling the moving mechanism 5 and measuring the resistivity and the conductive type of the single crystal silicon rod 10 by the resistivity testing module 7;
s6, printing a label; after the detection is finished, the system automatically prints the label, and manually attaches the label to the silicon single crystal rod 10;
s7, blanking; the single crystal silicon rod 10 is taken away by a crystal bar transport vehicle.
Step S3 specifically includes the following steps: s301, manually rotating the single crystal silicon rod 10, selecting the single crystal silicon rod 10, polishing a bus, and manually recording the diameter specification (3/4/5/6/8 inches) of the single crystal silicon rod 10;
s302, manually pressing a start button, starting the equipment to operate, and enabling a light curtain to take effect;
s303, the console controls the transverse moving linear module 401 to move, the position of the diameter sensor 404 is changed (when the size of the single crystal silicon rod 10 is 3/4/5 inches, the diameter sensor 404 is positioned at the lower position; when the size of the single crystal silicon rod 10 is 6/8 inches, the diameter sensor 404 is positioned at the lower position), the upper position of the single crystal silicon rod 10 is automatically detected, and when the detection reaches a preset value, the starting point of the equal diameter is recorded; when the change from the preset value is detected, starting to record the constant diameter end point (according to the diameter error of the silicon single crystal rod 10, the preset value is a set range value, and the specific range value is set according to the site);
s304, the system calculates the diameter and the equal diameter length of the crystal bar through a formula, wherein the diameter measurement formula is as follows: and (3) measuring the distance L between the two groups of sensors in an idle load mode, then respectively measuring the distances R1 and R2 between the two groups of sensors and the silicon single crystal rod according to the formula: l ═ R1+ R2+ diameter of the single crystal silicon rod; the equal-diameter length measurement is carried out according to field measurement, further description is omitted, and corresponding data are recorded.
Step S4 specifically includes the following steps: s401, the console controls the transverse linear module 501 to translate and controls the longitudinal linear module I502 to lift, and the polishing position is controlled by a program or manually recorded with data;
s402, pressing an oilstone 606 down on the surface of the single crystal silicon rod 10, aligning the prefabricated polishing bus, polishing the single crystal silicon rod 10, and meanwhile, enabling a dust suction device to suck dust to impurities through a dust suction pipe 602 to prevent environment pollution.
Step S5 specifically includes the following steps: s501, the console controls the transverse linear module 501 to translate and controls the longitudinal linear module II 503 to lift, and the measuring position is controlled by a program or manually recorded with data;
s502, controlling the air cylinder 403 of the resistivity testing module 7 to press the surface of the silicon single crystal rod 10 by using a resistivity probe and a P/N type testing pen respectively, measuring the resistivity and the P/N pole type number of the silicon single crystal rod 10, and recording the measurement data.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. The utility model provides an automatic test equipment of single crystal silicon rod resistivity which characterized in that: the device comprises a test frame (1), wherein a test bench (2) is arranged on the test frame (1), a plurality of groups of crystal bar supporting modules (3) used for supporting the single crystal silicon rods (10) are fixedly arranged on the test bench (2), and a scanning module (4) used for measuring the diameter of the single crystal silicon rods (10) is slidably arranged on the test bench (2); the test bench (2) is fixedly provided with a moving mechanism (5), and the moving mechanism (5) is fixedly provided with a polishing dust absorption module (6) for polishing the dust absorption monocrystalline silicon rod (10) and a resistivity test module (7) for testing the resistivity of the monocrystalline silicon rod (10).
2. The apparatus of claim 1, wherein the apparatus comprises: a plurality of groups of crystal bar supporting modules (3) are transversely arranged, and gaps corresponding to fork teeth of the crystal bar transport cart are reserved between each group of crystal bar supporting modules (3);
each group of crystal bar supporting modules (3) comprises a supporting frame (301), the supporting frame (301) is of a U-shaped structure, the supporting frame (301) is fixedly installed on the test bench (2), two groups of rollers (302) are installed on the supporting frame (301) in an assembling mode, a gap for placing the single crystal silicon bar (10) is reserved between the two groups of rollers (302), and the outer layers of the rollers (302) are coated with rubber;
a temperature sensor (303) for detecting the monocrystalline silicon rod (10) and a material sensor (304) for detecting whether the monocrystalline silicon rod (10) exists are fixedly arranged on the inner side wall of the support frame (301).
3. The apparatus of claim 2, wherein the apparatus comprises: be located and be equipped with two sets of spouts (201) on testboard (2) of crystal bar support module (3) both sides, it is provided with scanning module (4) to slide in spout (201), scanning module (4) are including sideslip sharp module (401), the fixed bottom that sets up in testboard (2) of sideslip sharp module (401), it is provided with installing support (402) along spout (201) removal to slide on sideslip sharp module (401), fixed mounting has two sets of cylinders (403) on installing support (402), the equal fixedly connected with diameter sensor (404) of output shaft end of cylinder (403), two sets of diameter sensor (404) are located the both sides of single crystal silicon rod (10).
4. The apparatus of claim 1, wherein the apparatus comprises: the moving mechanism (5) comprises two groups of parallel transverse straight line modules (501), a first longitudinal straight line module (502) and a second longitudinal straight line module (503) are arranged on the two groups of transverse straight line modules (501) in a sliding mode, the polishing dust collection module (6) is fixedly installed on the first longitudinal straight line module (502) through a first fixing support (8), and the resistivity test module (7) is fixedly installed on the second longitudinal straight line module (503) through a second fixing support (9).
5. The apparatus of claim 4, wherein the apparatus comprises: the polishing and dust removing module comprises a supporting plate (601), the supporting plate (601) is fixedly arranged on a first fixing support (8), two groups of dust suction pipes (602) are fixedly arranged on the supporting plate (601), the two groups of dust suction pipes (602) are connected with a dust suction device, a gap is reserved between the two groups of dust suction pipes (602), two groups of linear bearings (603) are fixedly arranged in the gap, guide rods (604) are arranged in the linear bearings (603) in a sliding mode, each guide rod (604) comprises a sliding part, the sliding parts are correspondingly arranged in the linear bearings (603), a limiting part for preventing the guide rods (604) from being separated from the linear bearings (603) is arranged at the top end of each sliding part, a mounting part (605) is fixedly arranged at the bottom end of each sliding part, each mounting part (605) is of a U-shaped structure, and oilstones (606) for polishing the surface of the single crystal silicon rod (10) are fixedly arranged in each mounting part (605);
the sliding part is sleeved with a spring, and the spring is positioned between the mounting part (605) and the supporting plate (601).
6. The apparatus of claim 1, wherein the apparatus comprises: a protective cover is fixedly arranged above the test board (2), an opening is formed in one side of the protective cover, and a light curtain is arranged at the opening;
and a guide bar (101) for positioning a monocrystalline silicon rod (10) transport vehicle is fixedly arranged on the test frame (1) positioned at the opening side of the protective cover.
7. The automatic testing method applied to the automatic testing equipment for the resistivity of the single crystal silicon rod as set forth in any one of claims 1 to 6 is characterized by comprising the following steps: s1, feeding; transporting the monocrystalline silicon rod to the crystal rod supporting module by using a monocrystalline silicon rod transport vehicle;
s2, measuring the temperature; after the material sensor detects that the single crystal silicon rod is placed in place, the temperature sensor detects the temperature of the single crystal silicon rod and records temperature data;
s3, scanning the crystal; controlling the transverse moving linear module to move, measuring the diameter and the equal-diameter length of the single crystal silicon rod by the scanning module, and recording data;
s4, polishing and dust collection; controlling the moving mechanism, polishing the surface of the single crystal silicon rod by the polishing and dust collection module, and collecting dust of the polished impurities by a dust collection device;
s5, measuring resistivity; controlling the moving mechanism, and measuring the resistivity and the conductive type of the single crystal silicon rod by the resistivity testing module;
s6, printing a label; after the detection is finished, the system automatically prints the label, and manually attaches the label to the silicon single crystal rod;
s7, blanking; and taking away the monocrystalline silicon rod by using a crystal rod transport vehicle.
8. The method as claimed in claim 7, wherein the step S3 specifically comprises the following steps: s301, manually rotating the single crystal silicon rod, selecting a polishing bus of the single crystal silicon rod, and manually inputting the diameter specification of the single crystal silicon rod;
s302, manually pressing a start button, starting the equipment to operate, and enabling a light curtain to take effect;
s303, the console controls the transverse moving linear module to move, the position of the diameter sensor is changed, the upper position of the single crystal silicon rod is automatically detected, and when the detection reaches a preset value, an equal-diameter starting point is recorded; when the situation that the distance is reduced from the preset value is detected, starting to record the equal-diameter end point;
s304, the system calculates the diameter and the equal diameter length of the crystal bar through a formula and records corresponding data.
9. The method as claimed in claim 7, wherein the step S4 specifically comprises the following steps: s401, the console controls the transverse linear module to translate and controls the longitudinal linear module to lift, and the polishing position is controlled by a program or manually recorded with data;
s402, pressing the oilstone down on the surface of the single crystal silicon rod, aligning the prefabricated polishing bus, polishing the single crystal silicon rod, and meanwhile, enabling the dust suction device to suck dust to impurities through the dust suction pipe to prevent environment pollution.
10. The method as claimed in claim 7, wherein the step S5 specifically comprises the following steps: s501, the console controls the transverse linear module to translate and controls the longitudinal linear module II to lift, and the measuring position is controlled by a program or manually recorded with data;
s502, controlling a cylinder of the resistivity testing module to press the surface of the silicon single crystal rod by using a resistivity probe and a P/N type testing pen respectively, carrying out resistivity measurement and P/N type measurement on the silicon single crystal rod, and recording measurement data.
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Cited By (1)
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|---|---|---|---|---|
| CN115290974A (en) * | 2022-07-21 | 2022-11-04 | 扬州方通电子材料科技有限公司 | Method and device for measuring resistivity of silicon single crystal rod |
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