CN209071375U - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN209071375U CN209071375U CN201821866101.7U CN201821866101U CN209071375U CN 209071375 U CN209071375 U CN 209071375U CN 201821866101 U CN201821866101 U CN 201821866101U CN 209071375 U CN209071375 U CN 209071375U
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- 239000010410 layer Substances 0.000 claims abstract description 284
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000007769 metal material Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000012790 adhesive layer Substances 0.000 claims abstract description 7
- 239000012774 insulation material Substances 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 40
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 238000003475 lamination Methods 0.000 description 27
- 238000005520 cutting process Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 230000003760 hair shine Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000002310 reflectometry Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000011514 reflex Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a kind of light emitting diodes.In some embodiments, light emitting diode includes upper and lower part, wherein the top is semiconductor laminated, it from top to bottom successively include the first semiconductor layer, active layer and the second semiconductor layer, the lower part successively includes insulation material layer, adhesive layer and substrate, it is characterized by: the lower part has an edge part for exceeding the top edge, the edge part includes at least the first insulating layer, metal material layer and second insulating layer, adhesive layer and substrate from top to bottom.
Description
Technical field
The utility model relates to semiconductor light electrical domains, and in particular to a kind of light emitting diode construction.
Background technique
Light emitting diode is widely used in solid-state lighting light source.Compared to traditional incandescent lamp bulb and fluorescent lamp, shine
Diode has many advantages, such as that power consumption is low and the service life is long, therefore light emitting diode has gradually replaced conventional light source, and applies
In various fields, such as traffic sign, backlight module, street lighting, Medical Devices.For the luminous effect for promoting light emitting diode
Often reflecting layer is arranged in the lower section of extension lamination in rate, and the light that active layer issues downwards at this time is reflected back via reflecting layer, is increased
Light extraction efficiency.
Utility model content
The utility model provides a kind of light emitting diode, effectively increases the external efficiency of light extraction of light emitting diode.
The utility model provides a kind of light emitting diode, including upper and lower part, wherein the top is folded for semiconductor
Layer includes successively from top to bottom the first semiconductor layer, active layer and the second semiconductor layer, and the lower part successively includes insulating materials
Layer, adhesive layer and substrate, the lower part have an edge part for exceeding the top edge, and the edge part is from top to bottom at least
Include the first insulating layer, metal material layer and second insulating layer, adhesive layer and substrate.
In some embodiments, the semiconductor laminated lower surface side is successively arranged first insulating layer, metallic reflection
Layer, coat of metal and second insulating layer.
Preferably, the coat of metal is identical as the material of the metal material layer of the edge part.In other implementations
In example, the material of the coat of metal and the metal material layer of the edge part can not also be identical
In some embodiments, it is electrically isolated between the coat of metal and the metal material layer of the edge part.
Preferably, the metal material layer of the edge part is located at the outermost of the peripheral portion.
In some embodiments, it is described it is semiconductor laminated there is at least one recess portion, the recess portion is semiconductor laminated from this
Lower surface starts, and extends to first kind semiconductor layer across the second semiconductor layer, active layer, first insulating layer covers institute
State the side wall of recess portion.
Further, the light emitting diode also includes the first conductive tie layers, is formed in first insulating layer
On surface and the recess portion is filled, is electrically connected with the first semiconductor layer；Second conductive tie layers, be formed in this first
Between insulating layer and second insulating layer, and it is electrically connected with the second semiconductor layer；Second conductive tie layers include gold
Belong to reflecting layer and coat of metal.Preferably, the coat of metal is identical as the material of the metal material layer of the edge part.
In some embodiments, second conductive tie layers also include conductive adhesive layer, are located at the metallic reflector
Between first insulating layer.
Other features and advantages of the utility model will illustrate in the following description, also, partly from specification
In become apparent, or understood and implementing the utility model.The purpose of this utility model and other advantages can pass through
Specifically noted structure is achieved and obtained in the specification, claims and drawings.
Detailed description of the invention
Attached drawing is used to provide a further understanding of the present invention, and constitutes part of specification, practical with this
Novel embodiment is used to explain the utility model together, does not constitute limitations of the present invention.In addition, attached drawing data are
Summary is described, is not drawn to scale.
Fig. 1 is the structural schematic diagram of the light emitting diode of the utility model one embodiment.
Fig. 2 shows different materials for the reflectance curve figure of the light of different wave length.
Fig. 3 is the structural schematic diagram of the light emitting diode of second embodiment of the utility model.
Fig. 4 is a schematic diagram, illustrates the side of the metallic reflector of light emitting diode described in second preferred embodiment
Along the edge for having exceeded extension lamination.
Fig. 5 is the structural schematic diagram of the light emitting diode of the utility model third embodiment.
Fig. 6 is the 4th embodiment of the utility model, it is shown that a kind of production process of light-emitting diode chip for backlight unit.
Fig. 7-19 is the 4th embodiment of the utility model, in the manufacturing process for simply illustrating a kind of light emitting diode
The structural schematic diagram that each step is presented.
5th embodiment of Figure 20-25 the utility model, in the manufacturing process for simply illustrating a kind of light emitting diode
The structural schematic diagram that part steps are presented, wherein Figure 23 respectively illustrates hair shown in the 4th embodiment and the 5th embodiment
Cutting Road photo in optical diode manufacturing process.
Figure 26 is the structural schematic diagram of the light emitting diode of the 6th embodiment of the utility model.
Figure 27 is the structural schematic diagram of the light emitting diode of the 7th embodiment of the utility model.
Specific embodiment
Depicted structure, ratio, size etc. in the schema of this specification, only to cooperate specification revealed interior
Hold, so that those skilled in the art understands and reads, is not intended to limit the utility model enforceable qualifications, therefore not
Has technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size are practical new not influencing this
Under the effect of type can be generated and the purpose that can reach, should all still fall in the revealed technology contents of the utility model can contain
In the range of lid.Meanwhile cited such as "upper" in this specification, "lower", "left", "right", " centre " and " one " term,
It is merely convenient to being illustrated for narration, rather than to limit the enforceable range of the utility model, and change or the tune of relativeness
It is whole, under the content of no substantial changes in technology, when being also considered as the enforceable scope of the utility model.
The light emitting diode construction of the utility model is described in detail with reference to the accompanying drawing, it is practical new to this whereby
How applied technology method can be fully understood and real accordingly type come the realization process for solving technical problem, and reaching technical effect
It applies.If it should be noted that do not constitute conflict, each spy in each embodiment and each embodiment in the utility model
Sign can be combined with each other, and be formed by technical solution and both be within the protection scope of the present invention.
Embodiment 1
For the luminous efficiency for reaching further light emitting diode, one can be added between extension lamination and metallic reflector
The transparent material layer of low-refraction, to constitute Omni-directional reflector, light a part that active layer issues downwards at this time via
Transparent material layer total reflection is gone back, and a part is gone back via the total reflection of high reflecting metal specular layer, increases light extraction efficiency.Specifically
, the material of metallic reflector, such as the visible light of wavelength 360nm or more are selected according to emission wavelength, Ag has high reflectance,
And 360nm visible light below (deep ultraviolet light of such as 100-280nm), then the reflectivity of Al is higher.In some light emitting diodes
In, using Ag as reflecting layer, using insulating layer as transparent material layer, since the adhesiveness of Ag and insulation interlayer are bad, because
This often needs to increase between the reflecting layer Ag and insulating layer ITO as adhesion layer.However ITO is in shortwave, especially ultraviolet band
Extinction it is more serious, therefore the structure it is more difficult it is effective promoted UV LED brightness.
Fig. 1 shows a kind of structural schematic diagram for the light emitting diode that emission wavelength is 360 ~ 450nm.The light emitting diode
It from top to bottom may include: top electrode 191, shine extension lamination 110, transparent dielectric layer 130, the first metal layer 141, the second gold medal
Belong to layer 142, coat of metal 160, bonded layer 170, electrically-conductive backing plate 180 and back electrode 192.Wherein shine extension lamination 110 1
As include n-type semiconductor layer 111, active layer 112 and p-type semiconductor layer 113, outer surface can cover one layer of insulating protective layer
150。
Specifically, the material for the extension lamination 110 that shines is selected according to emission wavelength, in order to improve electron-hole
Joint efficiency, active layer 112 can have multiple quantum wells (Multple quantum well) structure.The composition of active layer 112
Element and ratio of components can be determined by under type: the light with desired wavelength can be issued, such as with 350nm~
The ultraviolet of the peak wavelength of 400nm.Further, it can increase by a transparency conducting layer in the lower surface for the extension lamination that shines
120, which can be with semiconductor material or transparent conductive oxide, in the present embodiment, 120 shape of transparency conducting layer
At on the surface of p-type semiconductor layer 113, transparent conductive oxide, such as tin indium oxide (ITO), oxidation is can be selected in material
Indium (InO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO) etc..Translucency dielectric layer 130 is formed in electrically conducting transparent
On the surface of layer 120, thickness is preferably 50nm or more, such as can be 50 ~ 500nm, and material is for 110 institute of extension lamination that shines
The light of hair is transparent, for example, magnesium fluoride, magnesia (MgO), aluminium oxide (Al2O3), silica (SiOx), titanium oxide (TiO2)、
Tantalum oxide (Ta2O5), silicon nitride (SiNx) etc..The inside of the translucency dielectric layer 130, which is formed, a series of implements the translucency dielectric
The through-hole of layer 130.The first metal layer 141 is formed on the surface of translucency dielectric layer 130, and thickness is preferably 5nm hereinafter, being in
The state not formed a film now, second metal layer 142 are formed on the surface of the first metal layer 141.Coat of metal 160 is formed in
The lower surface of two metal layers 142, and the side of the second metal layer is coated, the preferably more stable gold of the coat of metal 160
Belong to material, such as Ti, Pt, Au, Cr or TiW etc. can be single or multi-layer structure for stopping the diffusion of second metal layer.
Bonded layer 170 is used to luminous extension lamination being bonded to electrically-conductive backing plate 180, can be Au-Au bonding, Au-In bonding etc..
In the present embodiment, the first metal layer 141 and second metal layer 142 constitute complex reflex mirror surface, and material can be with
It is formed by the outstanding metallics of electric conductivity, such as may include Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf.Especially
It, in the present embodiment, the reflectivity higher Al and Ag in 360-450nm wave band can be used in metallics, wherein first
Metal layer 141 is used to improve the adhesiveness between dielectric layer 130 and second metal layer 142, therefore the first metal layer 141 is preferably
There is good adhesion strength and the not material of extinction with dielectric layer 130.In the present embodiment, dielectric layer 130 selects silica, the
One metal layer 141 selects Al, and second metal layer 142 selects Ag, and wherein the thickness of the first metal layer 141 is preferably 1nm hereinafter, being in
Non- film-forming state so ensure that reflecting based on the mainly reflection of second metal layer for composite mirror surface.
Fig. 2 shows four kinds of materials in the reflectance curve figure of 300-430 wave band, as can be seen in the figure, in 360-430nm
The reflectance curve in wave band section, Al-Ag mirror surface is substantially parallel with the reflectance curve of Ag mirror surface, and the difference of the two be 4% with
It is interior.It compares with ITO-Ag mirror surface, Al-Ag mirror surface has more apparent promotion in the reflectivity of 345-410nm wave band.
Table one
| Wavelength (nm) | R1(Al-Ag) | R2(Ag) | (R2-R1)/R2 | R3(ITO-Ag) | (R1-R3)/R3 |
| 450 | 93.64 | 96.26 | 2.80% | 93.56 | 0.08% |
| 449 | 93.62 | 96.25 | 2.80% | 93.52 | 0.11% |
| 448 | 93.61 | 96.24 | 2.81% | 93.47 | 0.15% |
| 447 | 93.58 | 96.21 | 2.80% | 93.40 | 0.20% |
| 446 | 93.57 | 96.18 | 2.79% | 93.34 | 0.25% |
| 445 | 93.53 | 96.16 | 2.80% | 93.29 | 0.27% |
| 444 | 93.54 | 96.14 | 2.78% | 93.24 | 0.32% |
| 443 | 93.49 | 96.12 | 2.81% | 93.17 | 0.35% |
| 442 | 93.49 | 96.10 | 2.80% | 93.12 | 0.39% |
| 441 | 93.46 | 96.07 | 2.79% | 93.04 | 0.45% |
| 440 | 93.44 | 96.07 | 2.81% | 92.98 | 0.49% |
| 439 | 93.39 | 96.02 | 2.82% | 92.90 | 0.53% |
| 438 | 93.38 | 96.00 | 2.80% | 92.84 | 0.58% |
| 437 | 93.35 | 95.99 | 2.82% | 92.76 | 0.64% |
| 436 | 93.34 | 95.95 | 2.80% | 92.69 | 0.70% |
| 435 | 93.30 | 95.92 | 2.81% | 92.63 | 0.73% |
| 434 | 93.30 | 95.91 | 2.79% | 92.55 | 0.81% |
| 433 | 93.26 | 95.87 | 2.80% | 92.46 | 0.87% |
| 432 | 93.22 | 95.83 | 2.80% | 92.36 | 0.93% |
| 431 | 93.22 | 95.81 | 2.78% | 92.29 | 1.01% |
| 430 | 93.19 | 95.79 | 2.80% | 92.22 | 1.05% |
| 429 | 93.14 | 95.74 | 2.79% | 92.13 | 1.10% |
| 428 | 93.11 | 95.72 | 2.81% | 92.01 | 1.19% |
| 427 | 93.09 | 95.69 | 2.80% | 91.93 | 1.26% |
| 426 | 93.04 | 95.67 | 2.82% | 91.83 | 1.32% |
| 425 | 93.01 | 95.63 | 2.82% | 91.72 | 1.41% |
| 424 | 92.99 | 95.58 | 2.79% | 91.62 | 1.49% |
| 423 | 92.94 | 95.55 | 2.81% | 91.52 | 1.55% |
| 422 | 92.91 | 95.53 | 2.82% | 91.42 | 1.63% |
| 421 | 92.86 | 95.47 | 2.81% | 91.30 | 1.71% |
| 420 | 92.84 | 95.43 | 2.79% | 91.21 | 1.79% |
| 419 | 92.82 | 95.42 | 2.80% | 91.08 | 1.92% |
| 418 | 92.78 | 95.36 | 2.78% | 90.96 | 1.99% |
| 417 | 92.75 | 95.32 | 2.78% | 90.84 | 2.10% |
| 416 | 92.70 | 95.29 | 2.79% | 90.72 | 2.19% |
| 415 | 92.64 | 95.25 | 2.81% | 90.57 | 2.29% |
| 414 | 92.58 | 95.18 | 2.81% | 90.47 | 2.33% |
| 413 | 92.58 | 95.13 | 2.76% | 90.33 | 2.48% |
| 412 | 92.54 | 95.11 | 2.78% | 90.21 | 2.58% |
| 411 | 92.50 | 95.06 | 2.77% | 90.07 | 2.69% |
| 410 | 92.44 | 95.00 | 2.78% | 89.93 | 2.79% |
| 409 | 92.39 | 94.95 | 2.77% | 89.76 | 2.93% |
| 408 | 92.33 | 94.91 | 2.80% | 89.63 | 3.01% |
| 407 | 92.32 | 94.84 | 2.73% | 89.51 | 3.14% |
| 406 | 92.24 | 94.79 | 2.77% | 89.33 | 3.26% |
| 405 | 92.18 | 94.72 | 2.76% | 89.18 | 3.36% |
| 404 | 92.11 | 94.67 | 2.78% | 89.04 | 3.45% |
| 403 | 92.04 | 94.59 | 2.77% | 88.85 | 3.59% |
| 402 | 91.96 | 94.52 | 2.78% | 88.68 | 3.70% |
| 401 | 91.93 | 94.49 | 2.79% | 88.55 | 3.82% |
| 400 | 91.86 | 94.44 | 2.80% | 88.38 | 3.94% |
| 399 | 91.76 | 94.38 | 2.85% | 88.20 | 4.04% |
| 398 | 91.71 | 94.27 | 2.78% | 88.00 | 4.22% |
| 397 | 91.57 | 94.15 | 2.82% | 87.78 | 4.31% |
| 396 | 91.55 | 94.13 | 2.81% | 87.66 | 4.44% |
| 395 | 91.41 | 94.02 | 2.85% | 87.37 | 4.63% |
| 394 | 91.37 | 93.93 | 2.80% | 87.22 | 4.76% |
| 393 | 91.24 | 93.83 | 2.84% | 86.96 | 4.91% |
| 392 | 91.20 | 93.73 | 2.77% | 86.83 | 5.04% |
| 391 | 91.05 | 93.62 | 2.82% | 86.53 | 5.22% |
| 390 | 90.94 | 93.53 | 2.85% | 86.30 | 5.37% |
| 389 | 90.86 | 93.44 | 2.84% | 86.08 | 5.55% |
| 388 | 90.79 | 93.34 | 2.81% | 85.81 | 5.80% |
| 387 | 90.62 | 93.21 | 2.86% | 85.57 | 5.90% |
| 386 | 90.48 | 93.11 | 2.90% | 85.33 | 6.03% |
| 385 | 90.37 | 92.91 | 2.82% | 85.05 | 6.25% |
| 384 | 90.21 | 92.78 | 2.85% | 84.78 | 6.41% |
| 383 | 90.06 | 92.66 | 2.88% | 84.47 | 6.62% |
| 382 | 89.93 | 92.56 | 2.92% | 84.19 | 6.82% |
| 381 | 89.77 | 92.41 | 2.94% | 83.90 | 6.99% |
| 380 | 89.67 | 92.31 | 2.94% | 83.59 | 7.27% |
| 379 | 89.41 | 92.13 | 3.04% | 83.25 | 7.41% |
| 378 | 89.17 | 91.86 | 3.02% | 82.87 | 7.60% |
| 377 | 89.10 | 91.81 | 3.04% | 82.58 | 7.89% |
| 376 | 88.84 | 91.54 | 3.04% | 82.19 | 8.09% |
| 375 | 88.66 | 91.38 | 3.07% | 81.89 | 8.26% |
| 374 | 88.36 | 91.13 | 3.14% | 81.51 | 8.40% |
| 373 | 88.08 | 90.85 | 3.15% | 81.07 | 8.65% |
| 372 | 87.87 | 90.64 | 3.16% | 80.74 | 8.83% |
| 371 | 87.56 | 90.34 | 3.17% | 80.30 | 9.04% |
| 370 | 87.35 | 90.09 | 3.14% | 79.92 | 9.30% |
| 369 | 87.01 | 89.83 | 3.24% | 79.52 | 9.41% |
| 368 | 86.66 | 89.50 | 3.27% | 79.13 | 9.52% |
| 367 | 86.22 | 89.21 | 3.46% | 78.70 | 9.55% |
| 366 | 85.80 | 88.82 | 3.51% | 78.27 | 9.62% |
| 365 | 85.59 | 88.55 | 3.46% | 77.92 | 9.85% |
| 364 | 85.05 | 88.05 | 3.54% | 77.39 | 9.89% |
| 363 | 84.64 | 87.62 | 3.52% | 77.04 | 9.88% |
| 362 | 84.13 | 87.14 | 3.58% | 76.70 | 9.69% |
| 361 | 83.71 | 86.70 | 3.57% | 76.33 | 9.66% |
| 360 | 83.03 | 86.03 | 3.61% | 75.94 | 9.34% |
Table one shows three kinds of catoptric arrangements respectively in the reflectivity of wavelength 360-450nm wave band, it can be seen that uses Al-
The mirror surface of Ag structure, complex reflex rate are differed with the reflectivity of Ag mirror surface as within 4%, and anti-with ITO-Ag mirror surface
The rate of penetrating is compared, and reflectivity has biggish promotion, and especially for the ultraviolet light of 400 ~ 360nm, reflectivity is promoted up to 4 ~ 9%.
Above-mentioned light emitting diode, as catoptric arrangement, is being promoted using dielectric layer 130, the first metal layer and second metal layer
While brightness, the adhesiveness of mirror surface and dielectric layer ensure that.
Embodiment 2
Fig. 3 shows the structural schematic diagram of another light emitting diode.Difference with light emitting diode shown in Fig. 1 is:
It is greater than the metallic mirror surface 142 of light emitting diode shown in Fig. 1 positioned at the area of the metallic mirror surface 142 of luminous 110 lower section of extension lamination
Area, more preferably, the area of metallic mirror surface is equal to the area for the extension lamination that shines, the face for the extension lamination that even greater than shines
Product can so increase light emitting region, promote light emission luminance.Fig. 4 shows luminous extension lamination 110, dielectric layer 130 and second
Metal layer 142(, that is, metal mirror layer) three area relationship, it is seen that the edge 130a of dielectric layer 130 has exceeded
The edge 110a for the extension lamination that shines, and reach a certain distance, so that the edge of second metal layer 142 has exceeded luminous extension
The edge 110a of lamination.
Preferably, the edge 142a of second metal layer is 0 ~ 50 micron at a distance from the edge 110a of luminous extension lamination,
It such as can be 10-20 microns.
Embodiment 3
Fig. 5 shows that another emission wavelength is the structural schematic diagram of the light emitting diode of 360 ~ 450nm.The light-emitting diodes
Pipe may include: luminous extension lamination 110, transparency conducting layer 120, the first transparent dielectric layer 131, the first metal layer from top to bottom
141, second metal layer 142, coat of metal 160, the second transparent dielectric layer 132, conductive tie layers 270, substrate 180 and electrode
191、192。
Specifically, the extension lamination 110 that shines is led comprising the first semiconductor layer 111, active layer 112 and the second half from top to bottom
Body layer 113 has at least one recess portion 114, which passes through the second half since the lower surface of the extension lamination that shines
Conductor layer 113, active layer 112 extend to first kind semiconductor layer 111；First transparent dielectric layer 131 is formed in electrically conducting transparent
On the surface of layer 120, and the side wall of the recess portion 114 is covered, which has a series of conductive through hole
133, the part of the surface of transparency conducting layer 120 is exposed, the first metal layer 141 is formed in the surface of a transparent dielectric layer 131
On, and contacted with the surface of the transparency conducting layer 120 exposed；Second metal layer 142 is formed in 141 surface of the first metal layer
On, complex reflex mirror surface is constituted with the first metal layer 141；Coat of metal 160 is formed on the surface of second metal layer 142,
The side wall of the second metal layer 142 is wrapped up, while part of the surface can be exposed, for second electrode 192 to be arranged, which is protected
The preferably more stable metal material of sheath 160 can be single or multi-layer structure for stopping the diffusion of second metal layer；
Second transparent dielectric layer 132 is formed on the surface far from the luminous extension lamination of protective layer 160, can preferably be covered simultaneously
The side wall of the recess portion 114 is covered, material can be identical with the material of the first transparent dielectric layer 131, can not also be identical, such as
Magnesium fluoride, magnesia (MgO), aluminium oxide (Al can be selected2O3), silica (SiOx), titanium oxide (TiO2), tantalum oxide
(Ta2O5), silicon nitride (SiNx) etc., in further embodiments, the second transparent dielectric layer 132 is not covered with the side of recess portion 114
Wall；Conductive tie layers 270 are formed on the surface of the second transparent dielectric layer 132, and fill the recess portion 114, are led with the first half
Body layer 111 forms electric touching, may include the reflecting materials such as Al, Cr or Ag, contacts with the first semiconductor layer 111, while also wrapping
Include the bonding material for adhesive base plate 180.Substrate 180 is formed in the separate luminous extension lamination 110 of conductive tie layers 270
On one side surface, preferably with the material of good heat dissipation performance, such as Si, Cu or ceramics etc..First electrode 191 is formed in
In the back surface of substrate 180, it is electrically connected by conductive tie layers 270 and the first semiconductor layer 111, second electrode
192 are formed on the surface of the coat of metal 160 exposed, and pass through coat of metal 160, second metal layer 142, first
Metal layer 141, transparency conducting layer 120 and the second semiconductor layer 113 are electrically connected, and metal protects protective layer 160 and conduction even
It connects and is electrically isolated between layer 270 by the realization of the second transparent dielectric layer 132.Wherein, it the first transparent dielectric layer 131 and collectively forms
Comprehensive catoptric arrangement, the selections such as material, thickness can refer to embodiment 1.
In the present embodiment, conductive tie layers 270 are connect with heat-radiating substrate 180 and the first semiconductor layer 111 respectively, are constituted
Good passage of heat guides heat into heat-radiating substrate from the first semiconductor layer.Since the exciting radiation of active layer is via first
Semiconductor layer projects, and heat is easy to accumulate in the first semiconductor layer, and the conductive tie layers of the present embodiment can be by heat well
Heat-radiating substrate is led to from the first semiconductor layer.Recess portion 114 can be formed in the lower surface of the first semiconductor layer 111, can also be with
Extend to the first semiconductor layer 111 and rests on inside the first semiconductor layer, such as in some specific implementation patterns, the first half
Conductor layer has than relatively thin thickness (such as 2 microns hereinafter, even more thin), and recess portion 114 runs through the second semiconductor layer at this time
113, active layer rests on the lower surface of the first semiconductor layer 111 (surface of neighbouring active layer)；In other specific implementations
In pattern, the first semiconductor layer 111 has biggish thickness (such as 2 microns upper more than), and recess portion 114 is preferably to the first half at this time
111 internal stretch of conductor layer will more preferably can be drawn from the heat of the first semiconductor layer 111.Such as the first semiconductor layer 111 is thick
Degree is 2 μm ~ 3 μm, and the depth of the inside in the first semiconductor layer 111 of recess portion 111 can be 1 micron or more at this time.
Embodiment 4
Fig. 6 shows a kind of production process of light-emitting diode chip for backlight unit, substantially includes rapid S100-S700, Fig. 7-19 letter
Singly illustrate the structural section of different phase.7-19 is described in detail with reference to the accompanying drawing.
Step S100: providing a kind of epitaxial structure, from top to bottom successively comprising the first semiconductor layer, active layer and the second half
Conductor layer defines Cutting Road area, luminous zone and electrode district on the surface thereof.Specifically, providing epitaxial structure first, including growth
Substrate 100 and luminous extension lamination 110 on it is sequentially formed, which includes the first semiconductor layer 111, has
Active layer 112 and the second semiconductor layer 113, as shown in Figure 7.The selection of growth substrates 110 includes but is not limited to sapphire, nitridation
Aluminium, gallium nitride, silicon, silicon carbide, GaAs, surface texture can be planar structure or patterning graph structure.When the first semiconductor
Layer is p type semiconductor, and the second semiconductor layer can be different electrical n-type semiconductor, conversely, when the first semiconductor layer is n type
Semiconductor, the second semiconductor layer can be different electrical p-type semiconductor.Active layer can partly lead for neutrality, p-type or N-shaped are electrical
Body.When imposing electric current by semiconductor light emitting lamination, the luminous light out of excitation active layer.Active layer is selected according to emission wavelength
Material can issue blue, green light or ultraviolet light when the material based on nitride；When the material based on AlGaInP
When material, the light of red, orange, yellow light amber colour system can be issued.Then, defined on the upper surface of epitaxial structure Cutting Road area 115,
Luminous zone 116 and electrode district 116, the generally corresponding chip in the luminous zone 116 is internal to have a series of dimple patterns 114,
Electrode zone 116 is contained at least one, as shown in Figure 8.
Step 200: a series of recess portions 114 are formed on the surface of epitaxial structure, through the second semiconductor 113, active
Layer 112, rests on the first semiconductor layer 111, preferably, transparency conducting layer 120 is formed on the luminous zone for the extension lamination that shines,
As shown in Figure 9.
Step 300: forming the first transparent dielectric layer 131 on the surface of epitaxial structure, cover Cutting Road area simultaneously
115, the side wall of luminous zone 116 and recess portion 114 forms a series of conductive through holes 133, as shown in Figure 10 on luminous zone 116.
Step 400: sequentially form metal mirror layer and coat of metal 160 in luminous zone, wherein coat of metal 160 to
Electrode district 117 extends, and covers the insulating layer in second electrode area.Specifically, metal mirror layer can may be for single layer structure
Multilayered structure, material is preferably the material of the light of high reflection active layer transmitting, such as silver mirror is for the light of 360nm or more
Reflectivity with higher, aluminium mirror ultraviolet light below for 360nm reflectivity with higher are anti-when being used as using silver mirror
It is poor with the adhesion strength of transparent dielectric layer 131 when penetrating mirror surface, it needs to increase between silver mirror and transparent dielectric layer 131 at this time
One material layer is as adhesion layer.In some embodiments, the emission wavelength of active layer 112 is 400nm or more, selects Ag as gold
Belong to mirror surface, while increasing by an ITO thin layer as adhesion layer, to increase between Ag specular layer 142 and the first transparent dielectric layer 131
Adhesion strength between Ag mirror surface and the first transparent dielectric layer 131.In other implementation columns, the emission wavelength of active layer 112 is
360-450nm, since ITO is serious in short-wave band extinction effect, at this time preferably silver mirror layer and the first transparent dielectric layer 131 it
Between increase by an aluminum film layer 141, the adhesion strength of aluminium and insulating materials is preferable, and does not have absorption effects for short wavelength light, can
To take into account the reflectivity and reliability of mirror surface structure；In further embodiments, the emission wavelength of active layer 112 be 360nm with
Under, direct aluminium or rhodium are as reflecting mirror surface layer.Figure 11 is please referred to, the present embodiment is with metal mirror layer for two layers of knot
For structure, wherein first layer is aluminum metal layer 141, the second layer is silver metal layer, wherein aluminum metal layer with a thickness of 50 angstroms hereinafter,
Such as 1-10 angstroms, silver metal layer with a thickness of between 1000-5000 angstroms, such as 2000 angstroms.Coat of metal 160 coats silver metal
Layer 142, and cover electrode district 117.
Step 500: the second transparent dielectric layer 132 of production covers coat of metal 160, and extends to Cutting Road area 115
The first transparent dielectric layer 131 in Cutting Road area 115 is covered, preferably, the surface of recess portion 114 is covered simultaneously, as shown in figure 12,
The first transparent dielectric layer and the second transparent dielectric layer that 114 bottom of recess portion need to generally be removed at this time, expose the first semiconductor layer
111 surface, as shown in figure 13.
Step 600: making conductive tie layers 170 on the second transparent dielectric layer 132, fill recess portion 114, with the first half
Conductor layer 111 is electrically connected, and a substrate 180 is bonded on conductive tie layers 170, and make electricity at the back side of substrate 180
Pole 191, as shown in figure 14.
Step 700: carrying out cutting and form LED chip.In the present embodiment, it is also possible to including removal growth substrates, etching
Remove extension lamination, the production electrode etc. in Cutting Road area and electrode district.Specifically, removing growth substrates 100 first, the is exposed
The side surface far from active layer of semi-conductor layer 111, as shown in figure 15；Then Cutting Road area 115 and electrode district 117 are removed
Corresponding luminous extension lamination exposes the first transparent dielectric layer 115, as shown in figure 16；Electrode 192 is made in electrode district, such as
Shown in Figure 17；Finally, being cut, sliver forms single led chip.In the present embodiment, Figure 18 is please referred to, it can be first using sharp
Light is just drawn, and then back is drawn, then sliver, forms series of LED chip, as shown in figure 19.
Embodiment 5
In the manufacturing process of above-mentioned light emitting diode, when finally being cut, the structure in Cutting Road area 115 is followed successively by
One transparent dielectric layer 131, the second transparent dielectric layer 132, conductive tie layers 170, and the first transparent dielectric layer and second transparent Jie
The material of electric layer is frequently with insulating materials, such as silica, silicon nitride etc., when just being drawn using laser, laser heat accumulation
It is easy in insulation layer by layer so as to cause burst point.
Based on this, present embodiment discloses the production methods of another light emitting diode, and wherein step S100 ~ S300 is referred to
Embodiment 4, Figure 20 ~ 24 illustrate the structural schematic diagram that part steps in manufacturing process are presented, and carry out with reference to the accompanying drawing thin
Explanation.
Embodiment 4 is different from, in first transparent dielectric layer 131 in Cutting Road area 115 in the step 400 of the present embodiment
One metal material layer 162 of upper formation, the material of the metal material layer 162 can be identical with the material of coat of metal 160, can also
With not identical, to simplify processing procedure, the material of preferred metal materials layer 162 is identical with the material of coat of metal 160.Preferably,
It is electrically isolated between metal material layer 162 and coat of metal 160, as shown in figure 20.Figure 21 simply illustrates metal material layer
162 distribution situation, such as it is formed in the intermediate region in Cutting Road area 116.Figure 22 show Cutting Road shown in embodiment 4 and
The SME photo of the Cutting Road of the present embodiment, it is seen that in the present embodiment, intermediate in Cutting Road forms a metal
Material layer 162.The later sectional view of step S500 is completed in Figure 23 display, at this time the Cutting Road area 115 on epitaxial structure surface according to
It is secondary to have the first transparent dielectric layer 131, metal material layer 162 and the second transparent dielectric layer 132.Figure 24 simply illustrates to complete step
Just drawn after 600, the schematic diagram of backcut, when progress laser is just drawn, due to metal thermal diffusivity than insulating layer heat dissipation
Property it is good, the metal material layer 162 in Cutting Road area is absorbable just to draw laser thermal energy, reduce laser scribing split heat it is excessively high caused by burst point
Phenomenon.
Figure 25 shows a kind of structural section figure of the light emitting diode formed using the above method.The light emitting diode with
The structure of light emitting diode shown in fig. 5 is essentially identical, and difference is that the marginal texture of device is different.It is specific as follows: the hair
Optical diode includes shine extension lamination and material layer below, wherein the material layer of lower section has one to fold beyond the extension that shines
The edge part 118 of layer, which includes the first transparent dielectric layer 131, the second transparent dielectric being made of insulating materials
Layer 132, and the metal material layer 162 being clipped between the first transparent dielectric layer 131, the second transparent dielectric layer 132, the metal material
The material of layer 162 can be identical with the material of coat of metal 160, can also be different.
In the present embodiment, conductive tie layers 170 include the metal bonding layer for adhesive base plate 180, are filled out in Cutting Road
Fill metal material layer 162, it is possible to reduce the voidage of the metal bonding layer in device edge region.
Embodiment 6
Figure 26 shows a kind of structural schematic diagram for the light emitting diode that emission wavelength is 450nm or more.The light-emitting diodes
Pipe is essentially identical with the structure of light emitting diode shown in fig. 5, and difference is that the structure of mirror surface is different.Due to the wave that shines
A length of 450nm or more, using ITO-Ag structure as mirror surface structure, wherein ITO layer 143 is used as adhesion layer, and thickness is preferably
10nm or less.
Embodiment 7
Figure 27 shows that a kind of emission wavelength is the structural schematic diagram of 360nm light emitting diode below.The light-emitting diodes
Pipe is essentially identical with the structure of light emitting diode shown in fig. 5, and difference is that the structure of mirror surface is different.Due to the wave that shines
A length of 360nm or more directlys adopt aluminium reflecting layer 141 as mirror surface, and material is between 1000 ~ 5000 angstroms.
Only as described above, the only preferred embodiment of the utility model, when the utility model cannot be limited with this
The range of implementation, i.e., the simple equivalence changes made generally according to present utility model application the scope of the patents and patent specification content
With modification, all still belong in the range that the utility model patent covers.
Claims (12)
1. a kind of light emitting diode, including upper and lower part, wherein the top be it is semiconductor laminated, successively include from top to bottom
First semiconductor layer, active layer and the second semiconductor layer, the lower part successively include insulation material layer, adhesive layer and substrate,
Be characterized in that: the lower part has an edge part for exceeding the top edge, and the edge part includes at least the from top to bottom
One insulating layer, metal material layer and second insulating layer, adhesive layer and substrate.
2. light emitting diode according to claim 1, it is characterised in that: the semiconductor laminated lower surface side is successively set
There is the first insulating layer, metallic reflector, coat of metal and the second insulating layer.
3. light emitting diode according to claim 2, it is characterised in that: the gold of the coat of metal and the edge part
The material for belonging to material layer is identical.
4. light emitting diode according to claim 3, it is characterised in that: the gold of the coat of metal and the edge part
Belong to and being electrically isolated between material layer.
5. light emitting diode according to claim 1, it is characterised in that: the metal material layer is located at the edge part
Outermost.
6. light emitting diode according to claim 1, it is characterised in that: described semiconductor laminated recessed at least one
Portion, the recess portion extend to the first kind across the second semiconductor layer, active layer and partly lead since the semiconductor laminated lower surface
Body layer, first insulating layer cover the side wall of the recess portion.
7. light emitting diode according to claim 6, it is characterised in that: include also the first conductive tie layers, be formed in
On the surface of first insulating layer and the recess portion is filled, is electrically connected with the first semiconductor layer.
8. light emitting diode according to claim 7, it is characterised in that: further include the second conductive tie layers, be formed in
Between first insulating layer and second insulating layer, and it is electrically connected with the second semiconductor layer.
9. light emitting diode according to claim 8, it is characterised in that: second conductive tie layers include metallic reflection
Layer and coat of metal.
10. light emitting diode according to claim 9, it is characterised in that: the coat of metal and the edge part
The material of metal material layer is identical.
11. light emitting diode according to claim 9, it is characterised in that: second conductive tie layers also include conduction
Adhesion layer, between the metallic reflector and first insulating layer.
12. light emitting diode according to claim 6, it is characterised in that: the second insulating layer covers the recess portion
Side wall.
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| CN201821866101.7U CN209071375U (en) | 2018-11-13 | 2018-11-13 | Light emitting diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141924A (en) * | 2021-11-19 | 2022-03-04 | 厦门市三安光电科技有限公司 | Light emitting diode and preparation method thereof |
| TWI765231B (en) * | 2019-08-06 | 2022-05-21 | 大陸商廈門三安光電有限公司 | Light-emitting diode, method for making the same, and light-emitting device |
-
2018
- 2018-11-13 CN CN201821866101.7U patent/CN209071375U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI765231B (en) * | 2019-08-06 | 2022-05-21 | 大陸商廈門三安光電有限公司 | Light-emitting diode, method for making the same, and light-emitting device |
| CN114141924A (en) * | 2021-11-19 | 2022-03-04 | 厦门市三安光电科技有限公司 | Light emitting diode and preparation method thereof |
| CN114141924B (en) * | 2021-11-19 | 2023-08-11 | 厦门市三安光电科技有限公司 | Light emitting diode and preparation method thereof |
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