CN209418543U - A kind of semiconductor light-emitting elements - Google Patents
A kind of semiconductor light-emitting elements Download PDFInfo
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- CN209418543U CN209418543U CN201920175567.0U CN201920175567U CN209418543U CN 209418543 U CN209418543 U CN 209418543U CN 201920175567 U CN201920175567 U CN 201920175567U CN 209418543 U CN209418543 U CN 209418543U
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Abstract
A kind of semiconductor light-emitting elements, the multilayered structure including following lamination order: reflecting layer, transparent support substrate, transparent bonded layer, the second transparent ohmic contact layer, insulating layer, the first transparent ohmic contact layer and emitting semiconductor sequence；Emitting semiconductor sequence includes the first semiconductor layer, luminescent layer and the second semiconductor layer, several holes open in the first semiconductor layer side and extend through luminescent layer to the second semiconductor layer；First transparent ohmic contact layer includes that the first semiconductor layer side of a part covering forms electrical contact, including another part installs first electrode；Second transparent ohmic contact layer includes that a part extends to hole bottom and contacts with the second semiconductor layer, including another part installs second electrode；Insulating layer extends in hole the lateral wall insulation for being used for hole.Reflecting layer, transparent support substrate, transparent bonded layer, the second transparent ohmic contact layer, insulating layer and the first transparent ohmic contact layer, which effectively improve side, to be gone out light, reduces secondary extinction, and total luminous efficiency is improved.
Description
Technical field
It is related to a kind of semiconductor light-emitting elements, further relates to a kind of for promoting the high power semiconductor component of lateral emitting.
Background technique
Light emitting semiconductor device includes the material for emitting light.For example, light emitting diode (LED) is using in conjunction with semiconductor
Diode, the energy of the compound generation of electrons and holes is converted into light and emits the device of light.Light emitting semiconductor device quilt
It is widely used in the application of such as lighting device, display device and light source.
In general, semiconductor junction luminescent device has the junction structure of p-type semiconductor and n-type semiconductor.In semiconductor junction structure
In, light can be emitted by compound at the tie region of two kinds of semiconductor of electrons and holes, and also in two types
Active layer is formed between the semiconductor of type, with excitation light emission.According to the position of the electrode for semiconductor layer, semiconductor is binded up one's hair
Optical device has vertical structure and horizontal structure.Horizontal structure includes positive assembling structure and flip chip structure.However in high current
Under density requirement, for good current expansion, need electrode and epitaxial semiconductor contact area big, traditional positive assembling structure and
The increase of vertical structure electrode area, will lead to the reduction of light-emitting surface, and the substrate of inverted structure will lead to the absorption of light.It is based on
This supports the back side of semiconductor sequence by supporting substrate, and PN electrode is between supporting substrate and semiconductor, by PN electrode
It is all disposed within the back side of emitting semiconductor sequence light-emitting surface, and through hole is arranged by the back side of emitting semiconductor sequence and is worn
The light emission side of luminescent layer to emitting semiconductor sequence is crossed, one of electrode extends to the light emission side of through hole and electrically connects to realize
It connects, in the case where electrode does not block out light, ensure that the good extension of high current.The backlight side of emitting semiconductor sequence is usual
Metallic reflector can be designed, the light emission side that metallic reflector reflects light back into emitting semiconductor sequence goes out light.However reflecting layer is anti-
Being emitted back towards the light come will lead to the absorption of light, and light extraction efficiency can reduce, and this light extraction efficiency reduces especially under high current density
It can be more serious.
Utility model content
In order to further promote the light extraction efficiency under high current density, the utility model provides such as flowering structure: one kind is partly led
Body light-emitting component, the multilayered structure including following lamination order: reflecting layer, transparent support substrate, transparent bonded layer, second transparent
Ohmic contact layer, insulating layer, the first transparent ohmic contact layer and emitting semiconductor sequence.
Emitting semiconductor sequence includes the first conductive type semiconductor layer, luminescent layer and second conductive type semiconductor layer,
It opens in the first conductive type semiconductor layer side and extends through luminescent layer to the second conductive type semiconductor of exposure in several holes
Layer.
First transparent ohmic contact layer includes a part the first conductive type semiconductor layer side of covering and forms electrical contact,
Including another part for installing external connection and the ipsilateral first electrode of emitting semiconductor sequence.
Second transparent ohmic contact layer includes that a part of bottom for extending to hole is contacted with second conductive type semiconductor layer,
Including another part for installing external connection and the ipsilateral second electrode of first electrode.
Insulating layer extends in hole the lateral wall insulation for being used for the second transparent ohmic contact layer and hole.
The transparent support substrate is insulating substrate, and insulating substrate can be with the insulating substrate of aluminium oxide, quartz or glass.
The thickness of transparent support substrate is typically in the range of 80 ~ 150 μm.
The transparent bonded layer is insulating resin or insulating inorganic compound, and the insulating resin can be BCB
The transparent tackness material of (benzocyclobutene, benzocyclobutene) resin or epoxy resin etc..The insulation nothing
Machine compound can at least one of the materials such as inorganic oxide or nitride such as silica, zinc oxide, aluminium oxide or titanium oxide,
Or the multiple material being layered on top of each other.
First transparent ohmic contact layer or the second transparent ohmic contact layer is conductive metal oxide.Specific institute
The material of the first transparent ohmic contact layer or the second transparent ohmic contact layer stated is to guarantee good Ohmic contact and electricity
Stream extension, the specific can be that the transparent inorganic oxide of ITO or GZO or other conduction.First transparent ohmic contact
Layer or the second transparent ohmic contact layer thickness can be between 10nm ~ 200nm.
The emitting semiconductor sequence is AlxGayIn1-x-yN base light sequences, x=0 ~ 1, y=0 ~ 1, described luminous half
The light emitting region that conductor sequence is capable of providing is 200 ~ 550nm, and the emitting semiconductor sequence is raw by growth substrates extension
Length forms, and the epitaxial growth regime can be the modes such as MOCVD or LPE or PVCVD.
The reflecting layer is metal or DBR, and the reflecting layer passes through transparent ohmic to the emitting semiconductor sequence
The radiation that contact layer, insulating layer, transparent bonded layer, transparent support substrate reach bottom is reflected, and reflectivity at least can be
50% or more reflection, the reflecting layer can be silver, gold or the metals such as aluminium or Pt, be also possible to the oxides such as DBR or nitridation
The compositions such as object, specifically such as silica, silicon nitride, titanium dioxide or the different overlapping material of zinc oxide refractive index are formed.
Insulating layer between first transparent ohmic contact layer and the second transparent ohmic contact layer is oxide or nitride, tool
Body can be the materials such as silicon nitride, silica, zinc oxide.
The utility model provides a kind of following semiconductor light-emitting elements for high pressure simultaneously comprising following lamination order
Multilayered structure: reflecting layer, transparent support substrate, transparent bonded layer, multiple separation but electrical series emitting semiconductor sequence
Column have the second transparent ohmic contact layer, insulating layer, first transparent between the light sequences and transparent bonded layer of each separation
Ohmic contact layer.
Multiple isolated emitting semiconductor sequences include the first conductive type semiconductor layer, luminescent layer and the second conductive-type
Type semiconductor layer, several holes open in the first conductive type semiconductor layer side and extend through luminescent layer to the second conduction of exposure
Type semiconductor layer.
The first transparent ohmic contact layer below concatenated first emitting semiconductor sequence includes a part covering the
One conductive type semiconductor layer side simultaneously forms electrical contact, including another part installation is for external connection and and emitting semiconductor
The ipsilateral first electrode of sequence.
Concatenated last the second transparent ohmic contact layer of emitting semiconductor sequence includes the bottom that a part extends to hole
It is contacted with second conductive type semiconductor layer, including another part is mounted for external connection and same with emitting semiconductor sequence
The second electrode of side.Insulating layer below each emitting semiconductor sequence extends in hole for the second transparent ohmic contact layer
With the lateral wall insulation in hole.
Any one emitting semiconductor sequence by the second transparent ohmic contact layer extend through insulating layer with it is adjacent another
Series connection is realized in the first transparent ohmic contact layer contact of one emitting semiconductor sequence.
Pass through the first transparent ohmic contact layer, insulating layer, the second transparent ohmic contact layer, transparent bonded layer, Ou Ming support
The secondary absorption effects that the side that substrate and reflecting layer can effectively improve under high current goes out light, reduces emitting semiconductor sequence,
Improve overall luminous efficiency.
Detailed description of the invention
Attached drawing 1-4 is the structural schematic diagram of the semiconductor light-emitting elements of embodiment one；
Attached drawing 5-6 is the semiconductor light-emitting elements of embodiment two.
Specific embodiment
The light emitting diode construction of the utility model is described in detail with reference to the accompanying drawing, it is practical new to this whereby
How applied technology method can be fully understood and real accordingly type come the realization process for solving technical problem, and reaching technical effect
It applies.If it should be noted that do not constitute conflict, each spy in each embodiment and each embodiment in the utility model
Sign can be combined with each other, and be formed by technical solution and both be within the protection scope of the present invention.
Embodiment one
The present embodiment provides a kind of following semiconductor light-emitting elements, the multilayered structure including following lamination order: reflecting layer,
Transparent support substrate, transparent bonded layer, the second transparent ohmic contact layer, insulating layer, the first transparent ohmic contact layer and luminous half
Conductor sequence;
Emitting semiconductor sequence includes the first conductive type semiconductor layer, luminescent layer and second conductive type semiconductor layer,
It opens in the first conductive type semiconductor layer side and extends through luminescent layer to the second conductive type semiconductor of exposure in several holes
Layer；
First transparent ohmic contact layer includes a part the first conductive type semiconductor layer side of covering and forms electrical contact,
Including another part for installing external connection and the first electrode ipsilateral with emitting semiconductor sequence；
Second transparent ohmic contact layer includes that a part of bottom for extending to hole is contacted with second conductive type semiconductor layer,
Including another part for installing external connection and the second electrode ipsilateral with first electrode；
Insulating layer extends in hole the lateral wall insulation for being used for the second transparent ohmic contact layer and hole.
The transparent support substrate is insulating substrate, and insulating substrate can be with the insulating substrate of aluminium oxide, quartz or glass.
The transparent bonded layer is insulating resin or insulating inorganic compound, and the insulating resin can be BCB
The transparent tackness material of (benzocyclobutene, benzocyclobutene) resin or epoxy resin etc..The insulation nothing
Machine compound can at least one of the materials such as inorganic oxide or nitride such as silica, zinc oxide, aluminium oxide or titanium oxide,
Or the multiple material being layered on top of each other.
First transparent ohmic contact layer or the second transparent ohmic contact layer is conductive metal oxide.Specific institute
The material of the first transparent ohmic contact layer or the second transparent ohmic contact layer stated is to guarantee good Ohmic contact and electricity
Stream extension, the specific can be that the transparent inorganic oxide of ITO or GZO or other conduction.First transparent ohmic contact
Layer or the second transparent ohmic contact layer thickness can be between 10nm ~ 200nm.The thickness of transparent support substrate is typically in the range of 80 ~
150μm。
The emitting semiconductor sequence is AlxGayIn1-x-yN base light sequences, x=0 ~ 1, y=0 ~ 1, described luminous half
The light emitting region that conductor sequence is capable of providing is 200 ~ 550nm, and the emitting semiconductor sequence is raw by growth substrates extension
Length forms, and the epitaxial growth regime can be the modes such as MOCVD or LPE or PVCVD.
The reflecting layer is metal or DBR, and the reflecting layer passes through transparent ohmic to the emitting semiconductor sequence
The radiation that contact layer, insulating layer, transparent bonded layer, transparent support substrate reach bottom is reflected, and reflectivity at least can be
50% or more reflection, the reflecting layer can be silver, gold or the metals such as aluminium or Pt, be also possible to the oxides such as DBR or nitridation
The compositions such as object, specifically such as silica, silicon nitride, titanium dioxide or the different overlapping material of zinc oxide refractive index are formed.
Insulating layer between first transparent ohmic contact layer and the second transparent ohmic contact layer is oxide or nitride, tool
Body can be the materials such as silicon nitride, silica, zinc oxide.
Method acquisition is prepared by the following procedure in structure as above:
Epitaxial structure is obtained first, and a kind of semiconductor epitaxial layers, the semiconductor epitaxial layers packet are provided first as shown in Figure 1
Growth substrates 101, emitting semiconductor sequence are included, growth substrates 101 can be epitaxial growth substrate such as sapphire, silicon etc. or other
The substrate that can be used for growing emitting semiconductor sequence, the preferred sapphire of the present embodiment.
The emitting semiconductor sequence includes that second conductive type semiconductor layer 104, luminescent layer 103 and Second Type are conductive
Property semiconductor layer 102, the first conduction type and the second conduction type are N-type or p-type respectively, and n-type doping is usually silicon doping, P
Type doping is usually magnesium doping to form different electric conductivity；Second conductive type semiconductor of the emitting semiconductor sequence
Layer 104, luminescent layer and Second Type conductive semiconductor layer 102 are made of AlxGayIn1-x-yN base semiconductor layer material, x=0
~ 1, y=0 ~ 1, the adjustment of the ingredient of the material of luminescent layer can satisfy deep ultraviolet, purple of the emission wavelength between 200 ~ 550nm
Outside, blue light or green light, in order to realize the removal of Lattice Matching, growth substrates between emitting semiconductor sequence and growth substrates,
It can choose preferred growth buffer layer, transition zone or etching cut-off layer etc. in growth substrates.
As shown in Fig. 2, then in one side opening of emitting semiconductor sequence, the opening in the hole is located at the first conduction type
104 side of semiconductor layer, and hole passes through luminescent layer 103 and extends in second conductive type semiconductor layer 102, the number in the hole
Amount is 2 ~ 50000, and the distance between adjacent aperture centers line is 5 ~ 500 μm, and the area in hole is 1 ~ 100 μm, the hole it is total
The ratio that area accounts for the area of the first conductive semiconductor layer 104 is 0.5 ~ 20%, it is furthermore preferred that the gross area in the hole is situated between
In 2 ~ 10%；The first transparent ohmic contact layer 106 is made, the first transparent ohmic contact layer 106 is covered on the second conduction type and partly leads
104 side of body layer is electrically connected with the first conductive type semiconductor layer 104；First transparent ohmic contact layer 106 can be list
Layer or multi-layer transparent conductive compound, electrically conducting transparent compound can be transparent conductive oxide, such as ITO, GZO, for the
The electric current Ohmic contact and current expansion of two conductive type semiconductor layers, 104 side；The refractive index of transparent conductive oxide is low
In emitting semiconductor sequence, the translucency of transparent conductive oxide promotes the radiation transmission of emitting semiconductor sequence one suitable
Point, emitting semiconductor sequence is arrived again without going past reflection, and double absorption occurs；First transparent ohmic contact layer 106 is logical
Cross sputtering plating or vapor deposition etc. techniques realize, in order to guarantee good Ohmic contact and current expansion characteristic, with a thickness of 10nm ~
200nm；One layer of passivation layer 105, passivation layer preferably can also be additionally set before the formation of the first transparent ohmic contact layer 106
105 can be nitride or oxide, such as silicon oxide or silicon nitride.The passivation layer 105 is formed in the first conduction type and partly leads
Body layer side 104 simultaneously carries out multiple openings with the first conductive type semiconductor layer 104 of exposure, then forms the first transparent ohmic contact
Layer 106 is on passivation layer 105 and covers to contacting with the first conductive type semiconductor layer 104 in opening, and passivation layer is multiple to be opened
The setting of mouth guarantees that the first ohmic contact layer forms good ohm between many places and the first conductive type semiconductor layer 104 and connects
Touching is to guarantee uniform current expansion.
Then production insulating layer 107 covers 106 side of side wall and the first transparent ohmic contact layer in the bottom in hole, hole, institute
The insulating layer 107 stated is made by CVD technique, and the material of insulating layer 107 is oxide or nitride such as silicon oxide or silicon nitride；
The insulating layer 107 is in 106 side of the first transparent ohmic contact layer with a thickness of 100nm ~ 5000nm.The thickness of insulating layer 107
It is selected according to actual insulation effect, and partial insulative layer 107 is removed with the bottom of exposed hole by etch process.
Then the second transparent ohmic contact layer 108 covering insulating layer 107 is made, and extends to bottom and second conduction in hole
Type semiconductor layer 102 directly contacts, and the material of the second transparent ohmic contact layer 108 and the first transparent ohmic contact layer 106 can
It can also be different with identical, with a thickness of 10nm ~ 200nm.Second transparent ohmic contact layer 108 extends to the bottom in hole and at least
The side wall in hole is covered, but can be the form for being not filled by full hole.
Then transparent bonded layer 109 is made, transparent bonded layer 109 is covering 108 surface of the second transparent ohmic contact layer,
It can deeply be filled into hole, the surface of bonded layer is smooth as far as possible.Transparent bonded layer 109 is insulating resin or insulating inorganic chemical combination
Object, it is transparent glutinous that the insulating resin can be BCB (benzocyclobutene, benzocyclobutene) resin or epoxy resin etc.
Work property material, the mode of bonding can make the mode being heating and curing, and realize that temperature is 200 ~ 400 DEG C.The insulation nothing
Machine compound can at least one of the materials such as inorganic oxide or nitride such as silica, zinc oxide, aluminium oxide or titanium oxide,
Or the multiple material being layered on top of each other, the insulating inorganic compound are high temperature and pressure bonding.
It is bonded transparent support substrate 110, transparent bonded layer 109 can also be covered on transparent support substrate 110 before bonding
On, the material of the transparent support substrate can be insulating supporting substrate, and insulating substrate can be with aluminium oxide, quartz or glass
Insulating substrate, the transparent support substrate have translucency, light transmittance at least 50% to the light that emitting semiconductor sequence radiates.
Then growth substrates 101 are removed, growth substrates 101 can choose laser lift-off, wet etching, dry method according to material
The techniques such as etching or grinding are removed, and such as the preferred laser lift-off of Sapphire Substrate, expose second conductive type semiconductor layer
102。
As shown in figure 3, carrying out the etching of thickness direction from 102 side of second conductive type semiconductor layer, it is etched to expose
The first transparent ohmic contact layer of part 106, which makes the position of first electrode and is etched to, exposes the second transparent ohmic contact layer
The position of 108 production second electrodes, makes first electrode 112 and second electrode 113 can while or not carry out, the first electricity simultaneously
The material of pole 112 and second electrode 113 can be the same or different, and the material of first electrode 112 or second electrode 113 can be with
It is at least one metal material such as Pt, Cr, Al, Ni, Au.First electrode 112 or second electrode 113 can also include and first
Metal ohmic contact between transparent ohmic contact layer 106 or the second transparent ohmic contact layer 107, to reduce contact ohm electricity
Resistance；102 side of second conductive type semiconductor layer can according to need carry out roughening treatment, roughening treatment as light emission side
To improve light extraction efficiency.
Then in substrate back plating metal or DBR to form reflecting layer 114, the plating metal can be vapor deposition or plating
Or chemical plating, the mode that the DBR can be CVD are formed, the preferred reflecting layer DBR of the present embodiment, more preferably aluminium oxide
With the overlapped formation dbr structure of silica.It is finally separating to form single semiconductor light-emitting elements.
Embodiment two
First transparent ohmic contact layer of embodiment one, insulating layer, the second transparent ohmic contact layer, transparent bonded layer, thoroughly
Bright support substrate and reflection layer structure are equally applicable to the semiconductor light-emitting elements of high pressure, specific as follows:
As shown in figure 5, a kind of semiconductor light-emitting elements comprising the multilayer of following lamination order: reflecting layer 211, transparent
Support substrate 210, transparent bonded layer 209, multiple separation but electrical series emitting semiconductor sequence (401,402), it is each
It include the multilayer of following lamination order: the second transparent ohmic contact between a isolated emitting semiconductor sequence and transparent bonded layer
Layer 206, insulating layer 207, the first transparent ohmic contact layer 208；
Multiple isolated emitting semiconductor sequences are led including the first conductive type semiconductor layer 204, luminescent layer 203 and second
Electric type semiconductor layer 202, several holes open in 204 side of the first conductive type semiconductor layer and extend through luminescent layer to sudden and violent
Reveal second conductive type semiconductor layer 202；
The first transparent ohmic contact layer 206 below concatenated first emitting semiconductor sequence includes a part covering
First conductive type semiconductor layer side 204 simultaneously forms electrical contact, including another part installation for external connection and with shine
The ipsilateral first electrode 212 of semiconductor sequence；
Concatenated last the second transparent ohmic contact layer of emitting semiconductor sequence 208 includes the bottom that a part extends to hole
Portion is contacted with second conductive type semiconductor layer 202, including another part is mounted for external connection and and emitting semiconductor
The ipsilateral second electrode 203 of sequence；Insulating layer 207 below each emitting semiconductor sequence extends to saturating for second in hole
The lateral wall insulation of bright ohmic contact layer 208 and hole；
One of emitting semiconductor sequence extends partially across insulating layer 207 by the second transparent ohmic contact layer 208
Realization series connection is contacted with the first transparent ohmic contact layer 206 of another adjacent emitting semiconductor sequence.
Concatenated first emitting semiconductor sequence is provided with the first electrode 212 of external connection, shines with first
The first conductive type semiconductor layer of semiconductor sequence 204 is electrically connected, and can be formed directly into the first exposed transparent ohmic
On contact layer 206, the last one concatenated emitting semiconductor sequence external sequence is provided with the second electrode 213 of external connection,
The second conductive type semiconductor layer 202 of itself and the last one emitting semiconductor sequence is electrically connected, and can be formed directly into
On the second exposed ohmic contact layer 208.
Wherein each emitting semiconductor sequence, the first transparent ohmic contact layer 206, insulating layer 207, the second transparent ohmic
Contact layer 208, transparent bonded layer 209, transparent support substrate 210 and the material in reflecting layer 211 can be the same as example 1, and
Preparation process is also consistent.
The isolated emitting semiconductor sequence is meant that, on light emitting elements, each emitting semiconductor sequence
In the semiconductor layer material that thickness direction bottom, top and side all do not share.
In each emitting semiconductor sequence, the first transparent ohmic contact layer 206 and the first conductive type semiconductor layer 202
Between one layer of additional passivation layer 205 can be set, passivation layer 205 can be not extend in hole, passivation layer 205 have multiple exposures
The opening of first conductive type semiconductor layer 202, the first transparent ohmic contact layer 206 covering opening is to realize and the first conductive-type
Ohmic contact and uniform current expansion are realized in the contact of type semiconductor layer 202.
In order to further illustrate the series connection mode between two emitting semiconductor sequences 401 and 402, as shown in Figure 6
Fig. 5 curvilinear frame at partial enlarged view, the first transparent ohmic below adjacent two emitting semiconductor sequences 401 and 402
It is disconnection insulated from each other between contact layer 206, specific insulating materials can be passivation layer 205, naturally it is also possible to be insulation
Layer 207 is filled, and concatenated one of emitting semiconductor sequence extends through insulating layer by the second transparent ohmic contact layer 208
207 contact realization series connection with the first transparent ohmic contact layer 206 of another adjacent emitting semiconductor sequence, are specifically the
Two transparent ohmic contact layers 208 extend through first transparent Europe of the opening of insulating layer 207 extremely with an adjacent light sequences
The contact of nurse contact layer 206 is to realize series connection.
Pass through the first transparent ohmic contact layer, insulating layer, the second transparent ohmic contact layer, transparent bonded layer, Ou Ming support
The secondary absorption effects that the side that substrate and reflecting layer can effectively improve under high current goes out light, reduces emitting semiconductor sequence,
Overall light extraction efficiency is provided.
The structure of the utility model can be made as encapsulation product by encapsulation, the illumination of the high current demand of extensive utilization or
Display field, such as backlight, flash lamp.
The foregoing is merely the preferred embodiments that the utility model is created, and are not intended to limit the utility model wound
It makes, within all spirit and principle created in the utility model, any modification, equivalent replacement, improvement and so on should all include
Within the protection scope that the utility model is created.
Claims (15)
1. a kind of semiconductor light-emitting elements, the multilayered structure including following lamination order: reflecting layer, transparent support substrate, transparent
Bonded layer, the second transparent ohmic contact layer, insulating layer, the first transparent ohmic contact layer and emitting semiconductor sequence；
Emitting semiconductor sequence includes the first conductive type semiconductor layer, luminescent layer and second conductive type semiconductor layer, several
It opens in the first conductive type semiconductor layer side and extends through luminescent layer to exposure second conductive type semiconductor layer in a hole；
First transparent ohmic contact layer includes a part the first conductive type semiconductor layer side of covering and forms electrical contact, including
Another part is used to install with external connection and ipsilateral with emitting semiconductor sequence first electrode；
Second transparent ohmic contact layer includes that a part extends to the bottom in hole and contacts with second conductive type semiconductor layer, including
Another part is used to install with external connection and ipsilateral with first electrode second electrode；
Insulating layer extends in hole the lateral wall insulation for being used for the second transparent ohmic contact layer and hole.
2. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the transparent support substrate is exhausted
Edge substrate.
3. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the transparent bonded layer is insulation
Resin or insulating inorganic compound.
4. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: first transparent ohmic contact
Layer or the second transparent ohmic contact layer are conductive metal oxide.
5. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the emitting semiconductor sequence is
AlxGayIn1-x-yN base light sequences, x=0 ~ 1, y=0 ~ 1.
6. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: transparent bonded layer is two layers or more
Inorganic compound.
7. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the reflecting layer be metal or
DBR。
8. a kind of semiconductor light-emitting elements comprising the multilayered structure of following lamination order: reflecting layer, transparent support substrate, thoroughly
Bright bonded layer, multiple separation but electrical series emitting semiconductor sequence, each separation emitting semiconductor sequence and thoroughly
It include the multilayer of following lamination order: the second transparent ohmic contact layer, insulating layer, the first transparent ohmic contact between bright bonded layer
Layer；
Multiple isolated emitting semiconductor sequences include that the first conductive type semiconductor layer, luminescent layer and the second conduction type are partly led
Body layer, several holes open in the first conductive type semiconductor layer side and extend through luminescent layer to the second conduction type of exposure half
Conductor layer；
The first transparent ohmic contact layer below concatenated first emitting semiconductor sequence includes that a part covering first is led
Electric type semiconductor layer side simultaneously forms electrical contact, including another part installation for external connection and with emitting semiconductor sequence
Ipsilateral first electrode；
The last one concatenated second transparent ohmic contact layer of emitting semiconductor sequence include a part extend to the bottom in hole with
Second conductive type semiconductor layer contact, including another part are mounted for external connection and ipsilateral with emitting semiconductor sequence
Second electrode；Insulating layer below each emitting semiconductor sequence extend in hole for the second transparent ohmic contact layer with
The lateral wall insulation in hole；The emitting semiconductor sequence of one of them by the second transparent ohmic contact layer extend to it is adjacent another
Series connection is realized in the first transparent ohmic contact layer contact of a emitting semiconductor sequence.
9. a kind of semiconductor light-emitting elements according to claim 8, it is characterised in that: the transparent support substrate is exhausted
Edge substrate.
10. a kind of semiconductor light-emitting elements according to claim 8, it is characterised in that: the transparent bonded layer is exhausted
Edge resin or insulating inorganic compound.
11. a kind of semiconductor light-emitting elements according to claim 8, it is characterised in that: first transparent ohmic connects
Contact layer or the second transparent ohmic contact layer are conductive metal oxide.
12. a kind of semiconductor light-emitting elements according to claim 8, it is characterised in that: the emitting semiconductor sequence is
AlxGayIn1-x-yN base light sequences, x=0 ~ 1, y=0 ~ 1.
13. a kind of semiconductor light-emitting elements according to claim 8, it is characterised in that: transparent bonded layer is two layers or more
Insulating inorganic compound.
14. a kind of semiconductor light-emitting elements according to claim 8, it is characterised in that: the reflecting layer be metal or
DBR。
15. a kind of semiconductor light-emitting elements according to claim 8, it is characterised in that: an emitting semiconductor
Sequence extends through the first of insulating layer and another adjacent emitting semiconductor sequence thoroughly by the second transparent ohmic contact layer
Series connection is realized in bright ohmic contact layer contact.
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