CN208791742U - A kind of ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater - Google Patents
A kind of ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater Download PDFInfo
- Publication number
- CN208791742U CN208791742U CN201820707081.2U CN201820707081U CN208791742U CN 208791742 U CN208791742 U CN 208791742U CN 201820707081 U CN201820707081 U CN 201820707081U CN 208791742 U CN208791742 U CN 208791742U
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- China
- Prior art keywords
- distributive pipe
- silicon wafer
- magnetron sputtering
- water
- sputtering coater
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Abstract
The utility model discloses a kind of ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater, it include: electrode contact, water cooled electrode, water supply connector, water outlet connector and distributive pipe, one end of electrode contact is connected with water cooled electrode, distributive pipe include in distributive pipe in the first of water cooled electrode and electrode contact, second distributive pipe, extend outer distributive pipe net at the top of water cooled electrode, water supply connector passes through distributive pipe in first and is connected with outer distributive pipe net, and water outlet connector passes through distributive pipe in second and is connected with outer distributive pipe net；Insulation sleeve is covered with outside electrode contact, external shield is covered with outside insulation sleeve, external shield passes through fixed device and is connected with the frame bottom in vertical silicon wafer magnetron sputtering coater, is provided with sealed insulation set between the bracket in water cooled electrode and vertical silicon wafer magnetron sputtering coater.The utility model will heat and cleaning step carries out simultaneously, and has carried out double-radiation function using the cooling water of equivalent, and good heat dissipation effect, sealed insulation are good.
Description
Technical field
The utility model relates to sputter coating fields, are specifically related to a kind of applied to vertical silicon wafer magnetron sputtering coater
Ion-clearing electrodes.
Background technique
Vertical silicon wafer magnetron sputtering coater is under vacuum conditions using magnetic controlled sputtering target to plating one layer on silicon wafer
Or metal multilayer film, it needs to clean the gas residue adhered on silicon wafer before plated film, conventional method is in purge chamber
It is filled with specific gas, then by applying voltage between electrode, gas is ionized, and the plasma after ionization is in motion process
Middle striking silicon slice, removes the gaseous impurity of silicon chip surface, and charges silicon wafer, improves adhesive force of the metal film on silicon wafer.
In order to reach better cleaning effect, need to heat silicon wafer before washing, conventional method is first will
Silicon wafer heating, which enters back into vacuum cavity, is cleaned, time-consuming and laborious, although furthermore conventional cleaning electrode is built-in with to radiate
Single heat dissipation pipe, but the heat dissipation effect of single heat dissipation pipe is bad, it is logical if necessary to accelerate heat dissipation just to need to accelerate water flow
Scanning frequency degree may not only influence electrode job stability but also waste water resource, while the leakproofness and insulating properties of conventional water cooled electrode
It is bad, cause cleaning effect not all right.
Utility model content
In order to solve the above-mentioned technical problem, it heats and cleans while carrying out, dissipate the purpose of the utility model is to provide a kind of
The ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater that thermal effect is good, sealed insulation is good.
The technical solution adopted in the utility model is:
A kind of ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater, comprising: electrode contact, water cooling electricity
Pole, water supply connector, water outlet connector and distributive pipe, the electrode contact are connected with water cooled electrode；
The distributive pipe includes the distributive pipe in distributive pipe in the first of water cooled electrode and electrode contact, second, and
Outer distributive pipe net positioned at two sides at the top of water cooled electrode, the water supply connector pass through distributive pipe and outer distributive pipe net phase in first
Even, the water outlet connector passes through distributive pipe in second and is connected with outer distributive pipe net；
Be covered with insulation sleeve outside the electrode contact, be covered with external shield outside the insulation sleeve, the external shield with
Frame bottom in vertical silicon wafer magnetron sputtering coater is connected, in the water cooled electrode and vertical silicon wafer magnetron sputtering coater
Bracket between be provided with sealed insulation set.
Further, the top of the water cooled electrode is provided with inner box and outter box, the bottom edge of the outter box and vertical
The bracket of formula silicon wafer magnetron sputtering coater connects, and is provided with insulation spacer between the inner box and outter box.
Further, water supply connector insertion electrode contact and be connected with the water inlet of distributive pipe in first, it is described out
Water swivel insertion electrode contact is simultaneously connected with distributive pipe water outlet in second, distributive pipe water outlet and outer distributive pipe in described first
The water inlet of net is connected, and the water inlet of distributive pipe is connected with the water outlet of outer distributive pipe net in described second；The outer distributive pipe
Excessively several supporting tables being arranged on inner box of Netcom are fixed.
Further, the supporting table includes the support base that bottom is connected with inner box, is set at the top of the support base
It is equipped with the semicircle groove with the cooperation of outer distributive pipe net, pressing plate is provided in the support base for solid with support base cooperation
Fixed outer distributive pipe net, the pressing plate are fixed by screws in support base.
Further, the external shield passes through the pressure flange worked in coordination and screw is fixed on vertical silicon wafer magnetron sputtering
On bracket in coating machine.
Further, dead ring, the dead ring inner wall and water cooling are provided between the insulation sleeve and sealed insulation set
Electrode connects, and dead ring outer wall connects with external shield.
Further, the side of the sealed insulation set connects with the bracket side of vertical silicon wafer magnetron sputtering coater.
Further, between the electrode contact and the contact surface of water cooled electrode, water cooled electrode and sealed insulation set connects
O-ring seal is all provided between contacting surface, between sealed insulation set and the contact surface of vertical silicon wafer magnetron sputtering coater.
It further, further include radio-frequency power supply, the electrode contact passes through screw and wiring far from one end of water cooled electrode
Piece is fixed, and the lug plate extends outside external shield and is electrically connected with radio-frequency power supply.
It further, further include the PLC control module being electrically connected with radio-frequency power supply, with the work shape for radio-frequency power supply
State.
The utility model has the beneficial effects that
The utility model is provided in first distributive pipe in distributive pipe and second in water cooled electrode and electrode contact, in water
It is provided with exposed outer distributive pipe net outside cold electrode, cooling water flows into first distributive pipe for water cooled electrode/electricity from water supply connector
The heat of pole connector is taken away, and then flows into outer distributive pipe net and distributes heat in vacuum cleaned room, improves in vacuum cleaned room
Temperature, on the one hand utilize environment temperature raising, on the other hand using ion hit kinetic energy give silicon wafer heat, improve cleaning
Efficiency, at the same cooling water radiated by exposed outer distributive pipe net after temperature reduce, back flow back into second distributive pipe for water cooling
The heat of electrode/electro pole connector is taken away and is flowed out from water outlet connector, has carried out double-radiation function, heat dissipation effect using the cooling water of equivalent
Fruit is good.
The design not only increases the temperature of vacuum cleaned room, will heat to silicon wafer and cleaning is combined into one, cleaning effect
It is good, while having carried out double-radiation function using cooling water, compare the design of single cooling water pipe not waste water resource while heat dissipation
Effect is more preferable.
Furthermore by the insulation sleeve that is arranged in outside electrode contact, external shield and water cooled electrode outside insulation sleeve and vertical
The combination of sealed insulation set between bracket in formula silicon wafer magnetron sputtering coater, insulation effect is good, and leakproofness is good.
Detailed description of the invention
Specific embodiment of the present utility model is described further with reference to the accompanying drawing；
Fig. 1 is the section signal for the ion-clearing electrodes that the utility model is applied to vertical silicon wafer magnetron sputtering coater
Figure.
Specific embodiment
It is as shown in Figure 1 a kind of Ion Cleaning electricity applied to vertical silicon wafer magnetron sputtering coater of the utility model
Pole, including electrode contact 1, water cooled electrode 2, water supply connector 31, water outlet connector 32 and distributive pipe, one end of electrode contact 1 and water
Cold electrode 2 is connected, and distributive pipe includes the distributive pipe in distributive pipe 41, second in the first of water cooled electrode 2 and electrode contact 1
42, extend the outer distributive pipe net 43 at 2 top of water cooled electrode, water supply connector 31 passes through distributive pipe 41 and outer distributive pipe net in first
43 are connected, and water outlet connector 32 passes through distributive pipe 42 in second and is connected with outer distributive pipe net 43.
Wherein, 2 bottom of water cooled electrode and the water inlet with distributive pipe 41 in first in electrode contact 1 are inserted into water supply connector 31
Mouthful be connected, water outlet connector 32 from 1 side of electrode contact be inserted into and with 42 water outlet phase of distributive pipe in second in electrode contact 1
Even, the insertion position of water outlet connector 32 and water supply connector 31 is not belonging to the protection scope of the utility model, can according to need and does
It exchanges or other is adjusted；41 water outlet of distributive pipe is connected with the water inlet of outer distributive pipe net 43 in first, distributive pipe 42 in second
Water inlet be connected with the water outlet of outer distributive pipe net 43；In order to reinforce heat dissipation effect, the length of outer distributive pipe net 43 be should be greater than
In electrode first in distributive pipe 41, second distributive pipe 42 length, including furthermore outer distributive pipe net 43 is by several settings
Supporting table 64 on box body 61 is fixed, avoids because of the leakproofness that pipeline is too long to cause deformation to influence interface.
Supporting table 64 includes the support base 641 being connected with inner box 61, is provided at the top of support base 641 and divides water outside
The semicircle groove that pipe network 43 cooperates, be provided in support base pressing plate 642 with for the cooperation of support base 641 is fixed outer divides water
Pipe network 43, pressing plate 642 are fixed by screws in support base 641.
In order to realize the effect of insulated enclosure, it is covered with insulation sleeve 51 outside electrode contact 1, is covered with outside insulation sleeve 51 outer
Shielding case 52, external shield 52 pass through fixed device and are connected with 7 bottom of bracket in vertical silicon wafer magnetron sputtering coater, water cooling
Sealed insulation set 53 is provided between bracket 7 in electrode 2 and vertical silicon wafer magnetron sputtering coater.The top of water cooled electrode 2
It is provided with inner box 61 and outter box 62, the bottom edge of outter box 62 connects with the bracket 7 of vertical silicon wafer magnetron sputtering coater,
Insulation spacer 63 is provided between inner box 61 and outter box 62.External shield 52 passes through 81 He of pressure flange worked in coordination
Screw is fixed on the bracket 7 in vertical silicon wafer magnetron sputtering coater.
Wherein, it in order to further strengthen insulating properties and leakproofness, is provided with absolutely between insulation sleeve 51 and sealed insulation set 53
Edge ring 54,54 inner wall of dead ring connect with water cooled electrode 2, and 54 outer wall of dead ring connects with external shield 52.Sealed insulation set 53
Side connect with 7 side of bracket of vertical silicon wafer magnetron sputtering coater.The contact surface of electrode contact 1 and water cooled electrode 2 it
Between, between water cooled electrode 2 and the contact surface of sealed insulation set 53, sealed insulation set 53 is with vertical silicon wafer magnetron sputtering coater
O-ring seal 82 is all provided between the contact surface of bracket 7.
It wherein, further include radio-frequency power supply, the one end of electrode contact 1 far from water cooled electrode 2 is solid by screw and lug plate 83
Fixed, lug plate 83 extends outside external shield 52 and is electrically connected with radio-frequency power supply.
It further include that the PLC being electrically connected with radio-frequency power supply is controlled to realize constant current, the constant pressure, invariable power of radio-frequency power supply
Module, with the working condition for controlling radio-frequency power supply.
The utility model is provided in first distributive pipe in distributive pipe 41 and second in water cooled electrode 2 and electrode contact 1
42, exposed outer distributive pipe net 43 is provided with outside water cooled electrode 2, cooling water flows into distributive pipe 41 in first from water supply connector 31
The heat of 2/ electrode contact 1 of water cooled electrode is taken away, then flows into outer distributive pipe net 43 and distributes heat in vacuum cleaned room,
The indoor temperature of vacuum cleaned is improved, the raising of environment temperature is on the one hand utilized, is on the other hand given using the kinetic energy that ion is hit
Silicon wafer heating improves cleaning efficiency, while cooling water is reduced by temperature after exposed outer distributive pipe net 43 heat dissipation, is back flowed back into
The heat of 2/ electrode contact 1 of water cooled electrode is taken away and is flowed out from water outlet connector 32 by distributive pipe 42 in second, utilizes the cold of equivalent
But water has carried out double-radiation function, good heat dissipation effect.
The design not only increases the temperature of vacuum cleaned room, will heat to silicon wafer and cleaning is combined into one, cleaning effect
It is good, while having carried out double-radiation function using cooling water, compare the design of single cooling water pipe not waste water resource while heat dissipation
Effect is more preferable.
Furthermore pass through the insulation sleeve 51 being arranged in outside electrode contact 1, external shield 52 and water cooling outside insulation sleeve 51
The combination of sealed insulation set 53 between bracket 7 in electrode 2 and vertical silicon wafer magnetron sputtering coater, insulation effect is good, close
Feng Xingjia.
The foregoing is merely the preferred embodiments of the utility model, the utility model is not limited to above-mentioned embodiment party
Formula, if with essentially identical means realize the utility model aim technical solution belong to the protection scope of the utility model it
It is interior.
Claims (10)
1. a kind of ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater characterized by comprising electrode contact
(1), water cooled electrode (2), water supply connector (31), water outlet connector (32) and distributive pipe, the electrode contact (1) and water cooled electrode
(2) it is connected；
The distributive pipe includes the distributive pipe in distributive pipe (41) in the first of water cooled electrode (2) and electrode contact (1), second
(42), and the outer distributive pipe net (43) positioned at two sides at the top of water cooled electrode (2), the water supply connector (31) pass through first interior point
Water pipe (41) is connected with outer distributive pipe net (43), and the water outlet connector (32) passes through distributive pipe (42) and outer distributive pipe net in second
(43) it is connected；
It is covered with insulation sleeve (51) outside the electrode contact (1), is covered with external shield (52) outside the insulation sleeve (51), it is described
External shield (52) is connected with bracket (7) bottom in vertical silicon wafer magnetron sputtering coater, the water cooled electrode (2) with it is vertical
Sealed insulation set (53) are provided between bracket (7) in silicon wafer magnetron sputtering coater.
2. the ion-clearing electrodes according to claim 1 applied to vertical silicon wafer magnetron sputtering coater, feature exist
: the top of the water cooled electrode (2) is provided with inner box (61) and outter box (62), the bottom edge of the outter box (62) and vertical
The bracket (7) of formula silicon wafer magnetron sputtering coater connects, be provided between the inner box (61) and outter box (62) insulation every
From piece (63).
3. the ion-clearing electrodes according to claim 2 applied to vertical silicon wafer magnetron sputtering coater, feature exist
Be inserted into electrode contact (1) in: the water supply connector (31) and with first in the water inlet of distributive pipe (41) be connected, the water outlet connects
Head (32) insertion electrode contact (1) is simultaneously connected with distributive pipe in second (42) water outlet, and distributive pipe (41) is discharged in described first
Mouth is connected with the water inlet of outer distributive pipe net (43), the water inlet of distributive pipe (42) and outer distributive pipe net (43) in described second
Water outlet is connected；The outer distributive pipe net (43) is fixed by several supporting tables (64) being arranged on inner box (61).
4. the ion-clearing electrodes according to claim 3 applied to vertical silicon wafer magnetron sputtering coater, feature exist
In: the supporting table (64) includes the support base (641) that bottom is connected with inner box (61), support base (641) top
Portion is provided with the semicircle groove with the cooperation of outer distributive pipe net (43), be provided in the support base pressing plate (642) with for
The fixed outer distributive pipe net (43) of support base (641) cooperation, the pressing plate (642) are fixed by screws in support base (641)
On.
5. the ion-clearing electrodes according to claim 1 applied to vertical silicon wafer magnetron sputtering coater, feature exist
In: the external shield (52) passes through the pressure flange (81) worked in coordination and screw is fixed on vertical silicon wafer magnetron sputtering coater
On interior bracket (7).
6. the ion-clearing electrodes according to claim 1 applied to vertical silicon wafer magnetron sputtering coater, feature exist
In: it is provided with dead ring (54) between the insulation sleeve (51) and sealed insulation set (53), dead ring (54) inner wall and water
Cold electrode (2) connects, and dead ring (54) outer wall connects with external shield (52).
7. the ion-clearing electrodes according to claim 1 applied to vertical silicon wafer magnetron sputtering coater, feature exist
In: the side of the sealed insulation set (53) connects with bracket (7) side of vertical silicon wafer magnetron sputtering coater.
8. the ion-clearing electrodes according to claim 7 applied to vertical silicon wafer magnetron sputtering coater, feature exist
In: between the electrode contact (1) and the contact surface of water cooled electrode (2), the contact of water cooled electrode (2) and sealed insulation set (53)
It is all provided between face, between the contact surface of the bracket (7) of sealed insulation set (53) and vertical silicon wafer magnetron sputtering coater O-shaped
Sealing ring (82).
9. the ion-clearing electrodes according to claim 1 applied to vertical silicon wafer magnetron sputtering coater, feature exist
In: it further include radio-frequency power supply, the one end of the electrode contact (1) far from water cooled electrode (2) is solid by screw and lug plate (83)
Fixed, the lug plate (83) is extended external shield (52) outside and is electrically connected with radio-frequency power supply.
10. the ion-clearing electrodes according to claim 9 applied to vertical silicon wafer magnetron sputtering coater, feature exist
In: it further include the PLC control module being electrically connected with radio-frequency power supply, with the working condition for controlling radio-frequency power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820707081.2U CN208791742U (en) | 2018-05-11 | 2018-05-11 | A kind of ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820707081.2U CN208791742U (en) | 2018-05-11 | 2018-05-11 | A kind of ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208791742U true CN208791742U (en) | 2019-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820707081.2U Expired - Fee Related CN208791742U (en) | 2018-05-11 | 2018-05-11 | A kind of ion-clearing electrodes applied to vertical silicon wafer magnetron sputtering coater |
Country Status (1)
| Country | Link |
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| CN (1) | CN208791742U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108411269A (en) * | 2018-05-11 | 2018-08-17 | 湖南菲尔姆真空设备有限公司 | A kind of ion-clearing electrodes applied to vertical silicon chip magnetron sputtering coater |
-
2018
- 2018-05-11 CN CN201820707081.2U patent/CN208791742U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108411269A (en) * | 2018-05-11 | 2018-08-17 | 湖南菲尔姆真空设备有限公司 | A kind of ion-clearing electrodes applied to vertical silicon chip magnetron sputtering coater |
| CN108411269B (en) * | 2018-05-11 | 2023-08-22 | 湖南众源科技有限公司 | Ion cleaning electrode applied to vertical silicon wafer magnetron sputtering coating machine |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190426 Termination date: 20210511 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |