CN208675209U - High-power high-efficiency sonar transmitter - Google Patents

High-power high-efficiency sonar transmitter Download PDF

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Publication number
CN208675209U
CN208675209U CN201821534333.2U CN201821534333U CN208675209U CN 208675209 U CN208675209 U CN 208675209U CN 201821534333 U CN201821534333 U CN 201821534333U CN 208675209 U CN208675209 U CN 208675209U
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China
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power
module
power amplifier
electrically connected
oxide
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Expired - Fee Related
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CN201821534333.2U
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Chinese (zh)
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曹亚良
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Hangzhou To Mdt Infotech Ltd
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Hangzhou To Mdt Infotech Ltd
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Abstract

The utility model provides high-power high-efficiency sonar transmitter, including power module, power amplifier module, impedance matching network module and transmitting transducer, the power module is for providing electric energy, the power amplifier module is used to convert AC signal power for Dc source power, the impedance matching network module is for realizing the impedance matching and filtering between the power amplifier module and the transmitting transducer, the transmitting transducer is for emitting acoustic signals, the power module is electrically connected with signal processor and Power Control Interface, the power module and the power amplifier module are electrically connected, the power amplifier module and the impedance matching network module are electrically connected, the impedance matching network module and the transmitting transducer are electrically connected.The utility model is suitable for powerful sonar transmitter, the quiescent dissipation of transmitter can be greatly lowered, while can solve the heat dissipation problem of power amplifier module.

Description

High-power high-efficiency sonar transmitter
Technical field
The utility model relates to sonar transmitter technical fields, and in particular to high-power high-efficiency sonar transmitter.
Background technique
In Underwater Acoustics Engineering field, to meet different measurement requests, wideband high-power sonar transmitter is answered extensively With due to designing and producing, majority is using bipolar power transistor and metal-oxide-semiconductor field effect transistor as power take off Part, with the rapid development of electronic technology, the development of high power amplifier part are also extremely rapid, and are successfully applied to electronic system Every field, wherein D-type power amplifier has the characteristics that high-efficient, small in size in the portable product of modernization To being widely applied, traditional broadband sonar transmitter is mainly the power amplifier of A class or AB class, this class A amplifier A it is main The disadvantage is that quiescent dissipation is higher, power utilization rate is low, it is difficult to high power work task is realized, to meet in modern Underwater Acoustics Engineering just Formula underwater communication apparatus small size and efficient requirement are taken, is designed a kind of suitable for powerful D class Sonar Signal transmitter With very important realistic meaning.
Utility model content
In consideration of it, the main purpose of the utility model is that solution problems of the prior art, provide a kind of big function Rate high efficiency sonar transmitter.
The technical solution adopted in the utility model is: high-power high-efficiency sonar transmitter, including power module, power amplifier mould Block, impedance matching network module and transmitting transducer, for the power module for providing electric energy, the power amplifier module is used for will be straight Galvanic electricity source power is converted into AC signal power, and the impedance matching network module is for realizing the power amplifier module and the hair The impedance matching and filtering between energy converter are penetrated, for the transmitting transducer for emitting acoustic signals, the power module is electrical It is connected with signal processor and Power Control Interface, the power module and the power amplifier module are electrically connected, the power amplifier mould Block and the impedance matching network module are electrically connected, and the impedance matching network module electrically connects with the transmitting transducer It connects.
Preferably, the power amplifier module is made of isolating interface, driving circuit, metal-oxide-semiconductor full-bridge circuit and output transformer, The isolating interface is used to receive the signal of signal processor, and the driving circuit is led for controlling the metal-oxide-semiconductor full-bridge circuit Logical or off state, the metal-oxide-semiconductor full-bridge circuit are used for responding circuit on or off state of realizing, the output transformer In single ended load is transformed to differential load, the isolating interface and the signal processor are electrically connected, the driving circuit Input terminal and the isolating interface be electrically connected, the output end of the driving circuit electrically connects with the metal-oxide-semiconductor full-bridge circuit It connects, the metal-oxide-semiconductor full-bridge circuit and the output transformer are electrically connected.
Preferably, the power module includes amplifier power supply and digital power, and the amplifier power supply is used to be the power amplifier Module provides voltage, and the digital power is used to provide voltage for the power amplifier module.
Preferably, the amplifier power supply includes 7.5V-60V power amplifier Switching power and 15V power amplifier driving power, the 15V Power amplifier driving power is used to provide drive level for the metal-oxide-semiconductor full-bridge circuit, and required 5V voltage is reduced to by voltage-stablizer.
Preferably, the power amplifier module is identical two-way D class power amplifier.
Preferably, the impedance matching network module is set as second order band logical Broadband Matching.
Preferably, the model of the metal-oxide-semiconductor full-bridge circuit is set as IRFI4020H.
Preferably, the model of the driving circuit is set as IR2010SPBF.
Compared with prior art, the utility model provides high-power high-efficiency sonar transmitter, the advantages of having and beneficial Effect is: by the way that the power amplifier module energy being made of isolating interface, driving circuit, metal-oxide-semiconductor full-bridge circuit and output transformer is arranged It is enough to convert AC signal power for Dc source power, it realizes the power amplification of signal, furthermore passes through the impedance matching of setting Network module can obtain 80kHz- from the linear frequency modulation square-wave signal that transformer exports by second-order bandpass filter The linear frequency modulation sine wave signal of 120kHz, the output power needed for being provided by Broadband Matching to transmitting transducer;Passing through will The power amplifier driving signal of driving circuit is transmitted using RS422 level mode, and the driver AM26C32 of four-way is selected to realize RS422 level when enabling to metal-oxide-semiconductor high-speed switch state, improves energy while reducing switching loss to the conversion of Transistor-Transistor Logic level Measure utilization efficiency.
Detailed description of the invention
Fig. 1 is the structural schematic block diagram of the utility model high-power high-efficiency sonar transmitter;
Fig. 2 is the circuit block diagram of the power amplifier module of the utility model high-power high-efficiency sonar transmitter.
Specific embodiment
In order to better understand the utility model, the utility model is carried out into one with attached drawing combined with specific embodiments below The description of step.
As depicted in figs. 1 and 2, the utility model provides high-power high-efficiency sonar transmitter, including power module, power amplifier Module, impedance matching network module and transmitting transducer, for the power module for providing electric energy, the power amplifier module is used for will Dc source power is converted into AC signal power, the impedance matching network module for realizing the power amplifier module with it is described Impedance matching and filtering between transmitting transducer, the transmitting transducer is for emitting acoustic signals, the power module electricity Property be connected with signal processor and Power Control Interface, the power module and the power amplifier module are electrically connected, the power amplifier Module and the impedance matching network module are electrically connected, and the impedance matching network module electrically connects with the transmitting transducer It connects, transmitter is made of power module, power amplifier module, impedance matching network.Power module not only provides needed for power amplifier module 7.5V-60V power supply (4 grades of switchings, 7.5V, 15V, 30V, 60V), 15V driving power.The function of power amplifier module is by DC power supply Power is converted into AC signal power, realizes the power amplification of signal.Impedance matching network first pass through second-order bandpass filter from The linear frequency modulation sine wave signal of 80kHz-120kHz is obtained in the linear frequency modulation square-wave signal of transformer output, to realize institute State the impedance matching and filtering between power amplifier module and the transmitting transducer.
Further, the power amplifier module is by isolating interface, driving circuit, metal-oxide-semiconductor full-bridge circuit and output transformer group At the isolating interface is used to receive the signal of signal processor, and the driving circuit is for controlling the metal-oxide-semiconductor full-bridge circuit On or off state, the metal-oxide-semiconductor full-bridge circuit realize circuit on or off state, the output transformer for responding For single ended load to be transformed to differential load, the isolating interface and the signal processor are electrically connected, the driving electricity The input terminal on road and the isolating interface are electrically connected, and the output end of the driving circuit and the metal-oxide-semiconductor full-bridge circuit are electrical Connection, the metal-oxide-semiconductor full-bridge circuit and the output transformer are electrically connected, and power amplifier is made of the identical D class power amplifier of two-way, often Road power amplifier is made of isolating interface, driving circuit, metal-oxide-semiconductor full-bridge (M1, M2, M3, M4) circuit, output transformer.Power amplifier input Signal (PH, PL, NH, NL) comes from signal processor, and the saturation to driving circuit control metal-oxide-semiconductor is sent to lead after isolating interface circuit Logical or off state.VDD_15V power supply provides the drive level of metal-oxide-semiconductor VGS, while providing corresponding 5V electricity by power conversion Source.Single ended load is transformed to the differential load of full-bridge requirement by output transformer, and realizes certain impedance mapping function, MOS Pipe drain voltage VDD_PA is power amplifier main power source, can control its voltage change to adjust power amplifier output power.
Further, the power module includes amplifier power supply and digital power, and the amplifier power supply is used to be the function Amplification module provides voltage, and the digital power is used to provide voltage for the power amplifier module.
Further, the amplifier power supply includes 7.5V-60V power amplifier Switching power and 15V power amplifier driving power, described 15V power amplifier driving power is used to provide drive level for the metal-oxide-semiconductor full-bridge circuit, and required 5V electricity is reduced to by voltage-stablizer Pressure.
Further, the power amplifier module is identical two-way D class power amplifier.
Further, the impedance matching network module is set as second order band logical Broadband Matching.
Further, the model of the metal-oxide-semiconductor full-bridge circuit is set as IRFI4020H, since MOSFET is a kind of utilization Field effect controls the semiconductor devices of electric current, and power MOSFET is not only small in size, light-weight, small power consumption, but also has input The features such as impedance is high, noise is low, thermal stability is good, manufacturing process is simple, the present embodiment preferably uses power MOSFET as D class The switching device of power amplifier.
According to the technical indicator of transmitter, every road power amplifier demand power is 150W.Maximum drain voltages when power amplifier design (VDD_PA) it is powered using 60V, then the output square wave amplitude at power amplifier metal-oxide-semiconductor end is up to 60V, and wherein the amplitude of sine-wave components can Up to 76V (60V*4/ π).Its metal-oxide-semiconductor parameter measurement is as follows:
The end load impedance of metal-oxide-semiconductor:
The maximum current of metal-oxide-semiconductor:
Power amplification efficiency:
Wherein:
VDD: transmitter supply voltage is calculated by 76V.
RDS (ON): the turning circuit of metal-oxide-semiconductor, the smaller efficiency of the value is higher, calculates by 100m Ω.
In order to reduce loss and keep certain switching speed, it should select that internal resistance is small, grid is electric as far as possible when choosing metal-oxide-semiconductor The few metal-oxide-semiconductor of lotus, therefore the metal-oxide-semiconductor of the preferred model IRFI4020H of the present embodiment.
Further, power amplifier driving signal is transmitted using RS422 level mode, the model of the RS422 level shifting circuit For AM26C32, the driver AM26C32 of four-way is selected to realize the conversion of RS422 level to Transistor-Transistor Logic level.The driving circuit Model be set as IR2010SPBF, the effect of driving circuit is exactly to reduce switching loss in metal-oxide-semiconductor high-speed switch state Energy utilization efficiency is improved simultaneously.Power MOS pipe can regard a capacitive device as, and the performance quality of driving circuit mainly depends on In the gate source voltage size variation of power MOS pipe and the number of gate charge.
The maximum power that power supply is supplied to power amplifier is about 150W, and power amplifier demand power is about 330W (300W/0.9), power supply It is not able to satisfy its power demand in the high-power output of 300W, therefore provides instantaneous power using capacitive energy storage, when impulse ejection It keeps voltage stabilization and is in nominal attenuation range.Transmitter maximum operating time within the one action period is 20ms, power supply Voltage V1 is 60V, and both end voltage V2 is set as 57V (attenuation range is calculated by 0.95) after capacitor electric discharge, then can calculate required electricity Capacitance.
Conservation of energy measure formula:
W=Δ P × τ=(330W-150W) × 0.02s=3.6J
The load impedance at metal-oxide-semiconductor end is 19R, and the impedance of energy converter is 5000 Ω;Therefore transformer and impedance matching network The total impedance ratio provided is n:
N=5000/19=263
Consider that impedance matching network provides 3 times of impedance ratio when design, transformer need to provide 81 times of impedance ratio (transformer 9) coil ratio is about.Impedance matching circuit is designed as second order band logical Broadband Matching, need to be logical according to the impedance operator of energy converter The method for crossing CAD determines filter parameter.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that There is also other identical elements in process, method, article or equipment including the element.
The embodiments of the present invention are described in detail above, but the content is only the preferable of the utility model Embodiment should not be considered as limiting the scope of the present invention.It is all to become according to equalization made by the scope of the utility model Change and improve etc., it shall still fall within the scope of this patent.

Claims (8)

1. high-power high-efficiency sonar transmitter, it is characterised in that: power module, power amplifier module, impedance matching network module and Transmitting transducer, the power module are used to convert exchange for Dc source power for providing electric energy, the power amplifier module Signal power, the impedance matching network module is for realizing the impedance between the power amplifier module and the transmitting transducer Match and filter, for the transmitting transducer for emitting acoustic signals, the power module is electrically connected with signal processor and function Rate control interface, the power module and the power amplifier module are electrically connected, the power amplifier module and the impedance matching network Module is electrically connected, and the impedance matching network module and the transmitting transducer are electrically connected.
2. high-power high-efficiency sonar transmitter according to claim 1, it is characterised in that: the power amplifier module is by being isolated Interface, driving circuit, metal-oxide-semiconductor full-bridge circuit and output transformer composition, the isolating interface is for receiving signal processor Signal, the driving circuit are used for controlling the metal-oxide-semiconductor full-bridge circuit on or off state, the metal-oxide-semiconductor full-bridge circuit Circuit on or off state is realized in response, and the output transformer is used to single ended load being transformed to differential load, described Isolating interface and the signal processor are electrically connected, and the input terminal of the driving circuit and the isolating interface are electrically connected, The output end of the driving circuit and the metal-oxide-semiconductor full-bridge circuit are electrically connected, and the metal-oxide-semiconductor full-bridge circuit and the output become Depressor is electrically connected.
3. high-power high-efficiency sonar transmitter according to claim 2, it is characterised in that: the power module includes function Discharge source and digital power, the amplifier power supply are used to provide voltage for the power amplifier module, and the digital power is used for as institute It states power amplifier module and voltage is provided.
4. high-power high-efficiency sonar transmitter according to claim 3, it is characterised in that: the amplifier power supply includes 7.5V-60V power amplifier Switching power and 15V power amplifier driving power, the 15V power amplifier driving power are used to be the metal-oxide-semiconductor full-bridge Circuit provides drive level, and required 5V voltage is reduced to by voltage-stablizer.
5. high-power high-efficiency sonar transmitter according to claim 1, it is characterised in that: the power amplifier module is identical Two-way D class power amplifier.
6. high-power high-efficiency sonar transmitter according to claim 1, it is characterised in that: the impedance matching network mould Block is set as second order band logical Broadband Matching.
7. high-power high-efficiency sonar transmitter according to claim 2, it is characterised in that: the metal-oxide-semiconductor full-bridge circuit Model be set as IRFI4020H.
8. high-power high-efficiency sonar transmitter according to claim 2, it is characterised in that: the model of the driving circuit It is set as IR2010SPBF.
CN201821534333.2U 2018-09-19 2018-09-19 High-power high-efficiency sonar transmitter Expired - Fee Related CN208675209U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821534333.2U CN208675209U (en) 2018-09-19 2018-09-19 High-power high-efficiency sonar transmitter

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Application Number Priority Date Filing Date Title
CN201821534333.2U CN208675209U (en) 2018-09-19 2018-09-19 High-power high-efficiency sonar transmitter

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110098813A (en) * 2019-04-03 2019-08-06 上海船舶电子设备研究所(中国船舶重工集团公司第七二六研究所) Low-power consumption pulse power amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110098813A (en) * 2019-04-03 2019-08-06 上海船舶电子设备研究所(中国船舶重工集团公司第七二六研究所) Low-power consumption pulse power amplifier

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Granted publication date: 20190329