CN107453606B - A kind of three level Boost circuits - Google Patents
A kind of three level Boost circuits Download PDFInfo
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- CN107453606B CN107453606B CN201710619532.7A CN201710619532A CN107453606B CN 107453606 B CN107453606 B CN 107453606B CN 201710619532 A CN201710619532 A CN 201710619532A CN 107453606 B CN107453606 B CN 107453606B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention provides a kind of three level Boost circuits, during at least one conducting of two metal-oxide-semiconductors, realizes the pressure to input capacitance.It takes coupling inductance and simple pressure connection to realize the automatically equalizing voltage control to input capacitance, output capacitance, metal-oxide-semiconductor, rectifier diode under the premise of not needing complex control, the application demand of high pressure occasion is met using conventional device.
Description
Technical field
The present invention relates to switch power technology fields more particularly to a kind of from pressing three level Boost circuits.
Background technique
Boost is widely used as a kind of switch DC booster circuit in field of power electronics, but with application
The significantly promotion of occasion voltage, using two level Boost circuits of common metal-oxide-semiconductor, diode, it is impossible to meet applications
Demand.Such as photo-voltaic power supply field, voltage change range is 100~1000V, and the common voltage specification of common metal-oxide-semiconductor, diode
For 600V, 650V, it is far below 1000V.We are readily available the IGBT of 1200V voltage specification or more, but are limited to hangover electricity
Stream, the switching frequency that IGBT allows are lower (10~30kHz)；We are also easily found the electricity of the thousands of volts of voltage rating or more
Power diode, but reverse recovery current is big, is chiefly used in 1kHz switching frequency below.Novel silicon carbide mos pipe, diode electricity
Pressure specification generally reaches 1200V, and diode does not have reverse recovery current, can application switch frequency it is very high, but as novel device
Part, first is that bringing a high price, second is that being difficult to buy.
Compared with two level Boost converters, device voltage stress halves three-level Boost converter, thus can adopt
Meet the requirement of the application high pressure (100~1000V) with conventional device.But modulation strategy, circuit itself parameter differences with
The inconsistent of driving delay may cause the unbalanced problem of mid-point voltage, thus need specific Pressure and Control scheme.Fig. 2 institute
Show circuit and control block diagram is currently used control program, sampled voltage Vo and Vo2 obtain controling parameter d and Δ d, to produce
Raw d1 and d2, obtains PWM1 and PWM2, carries out Pressure and Control to the voltage Vo1 and Vo2 on output capacitance Co1 and Co2, utilizes
Output capacitance voltage presses the voltage of metal-oxide-semiconductor and freewheeling diode.Due to the shadow of Boost circuit Right-half-plant zero
It rings, loop speed is slower, and the pressure dynamic property controlled by sampling feedback is bad.
Summary of the invention
The present invention provides a kind of three level Boost circuits pressed certainly, and coupling is taken under the premise of not needing complex control
It closes inductance and simple pressure connects the automatically equalizing voltage control realized to input capacitance, output capacitance, metal-oxide-semiconductor, rectifier diode
System, the application demand of high pressure occasion is met using conventional device.
The present invention is achieved through the following technical solutions: a kind of three level Boost circuits, including input capacitance
Cin1, input capacitance Cin2, output capacitance Co1, output capacitance Co2, metal-oxide-semiconductor TR1, metal-oxide-semiconductor TR2, rectifying tube D1, rectifying tube
D2；Input capacitance Cin1 connects with input capacitance Cin2, and just, other end connection inputs for one end connection input of input capacitance Cin1
The other end connection input of one end of capacitor Cin2, input capacitance Cin2 is negative；Metal-oxide-semiconductor TR1 and metal-oxide-semiconductor TR2 series connection, metal-oxide-semiconductor
The drain electrode of the source electrode connection metal-oxide-semiconductor TR2 of TR1, the anode of the drain electrode connection rectifying tube D1 of metal-oxide-semiconductor TR1；The source electrode of metal-oxide-semiconductor TR2 connects
The cathode of rectifying tube D2 is connect, the grid of metal-oxide-semiconductor TR1 connects external drive circuit with the grid of metal-oxide-semiconductor TR2；The yin of rectifying tube D1
Just, the anode connection output of rectifying tube D2 is negative for pole connection output；It further include coupling inductance L1, coupling inductance L2 and pressure connection；
One end of the coupling inductance L1 is just being connected with input, and the other end of coupling inductance L1 is connected with the drain electrode of metal-oxide-semiconductor TR1；Coupling
One end of inductance L2 and input negative connect, and the other end of coupling inductance L2 is connected with the source electrode of metal-oxide-semiconductor TR2；The pressure connects
It is connected in the series connection node B of the series connection node A of input capacitance Cin1 and input capacitance Cin2, metal-oxide-semiconductor TR1 and metal-oxide-semiconductor TR2, defeated
Capacitor Co1 is connected with the series connection node C of output capacitance Co2 out.
Preferably, external drive circuit generates driving signal, drives the metal-oxide-semiconductor TR1 and metal-oxide-semiconductor TR2 Simultaneous Switching,
Control output voltage stabilization.Particularly, transmission delay, switch duration are allowed between the driving signal of metal-oxide-semiconductor TR1 and TR2
Allow to have a certain difference；
Preferably, the coupling inductance L1 and just connected that end of input be connected with coupling inductance L2 and TR2 source electrode that
Hold Same Name of Ends each other.
Preferably, the coupling inductance L1 and coupling inductance L2 and be wound on same magnetic core, and coupling inductance L1 with
The circle number of coupling inductance L2 is identical.
Preferably, the external drive circuit is magnetic isolation drive circuit.
Working principle of the present invention is as follows: it is simultaneously turned in only one conducting of metal-oxide-semiconductor TR1, metal-oxide-semiconductor TR2 or two
In the process, coupling inductance L1 and coupling inductance L2 works as transformer, realizes the pressure to input capacitance voltage by clamper；
During simultaneously turning off in two metal-oxide-semiconductors, coupling inductance L1 connect with coupling inductance L2 as an inductance job, give output capacitance with
Load provides energy, and input capacitance voltage is realized together with coupling inductance voltage presses the clamper of output capacitance voltage；Output
Capacitance voltage realizes the pincers to two rectifier diode backward voltage Vd during two metal-oxide-semiconductors are opened, two rectifying tubes are truncated
Position is pressed, and is realized during two metal-oxide-semiconductor shutdowns, two rectifying tube forward conductions to the voltage between metal-oxide-semiconductor drain electrode and source electrode
The clamper of Vds is pressed.
Compared with prior art, three level Boosts circuit of the present invention has the following beneficial effects:
(1) pressure connection is realized simply；
(2) automatically equalizing voltage being realized in the switching process of master power switch pipe, being not necessarily to additional devices, dynamic property is good；
(3) control circuit is simple, at low cost.
Detailed description of the invention
Fig. 1 is two level Boosts circuit diagram in the prior art；
Fig. 2 is three level Boost circuits and common Pressure and Control scheme block diagram in the prior art；
Fig. 3 is the circuit diagram of the specific embodiment of the invention；
Fig. 4-1 is working state figure of the specific embodiment of the invention in t0~t1；
Fig. 4-2 is working state figure of the specific embodiment of the invention in t1~t2；
Fig. 4-3 is working state figure of the specific embodiment of the invention in t2~t3；
Fig. 4-4 is working state figure of the specific embodiment of the invention in t3~t4；
Fig. 5 is the key waveforms of the specific embodiment of the invention.
Specific embodiment
Embodiment one
In order to more clearly state the invention, the present invention is further detailed with reference to the accompanying drawing.
A kind of three level Boost circuits, including input capacitance Cin1, input capacitance Cin2, output capacitance Co1, output electricity
Hold Co2, metal-oxide-semiconductor TR1, metal-oxide-semiconductor TR2, rectifying tube D1, rectifying tube D2；Input capacitance Cin1 connects with input capacitance Cin2, defeated
One end connection for entering capacitor Cin1 inputs just, and the other end connects one end of input capacitance Cin2, the other end of input capacitance Cin2
Connection input is negative；Metal-oxide-semiconductor TR1 and metal-oxide-semiconductor TR2 series connection, the drain electrode of the source electrode connection metal-oxide-semiconductor TR2 of metal-oxide-semiconductor TR1, metal-oxide-semiconductor TR1
Drain electrode connection rectifying tube D1 anode；Metal-oxide-semiconductor TR2 source electrode connection rectifying tube D2 cathode, the grid of metal-oxide-semiconductor TR1 and
The grid of metal-oxide-semiconductor TR2 connects external drive circuit；Just, the anode connection of rectifying tube D2 is defeated for the cathode connection output of rectifying tube D1
It bears out；It further include coupling inductance L1, coupling inductance L2 and pressure connection；One end of the coupling inductance L1 and input positive
Even, the other end of coupling inductance L1 is connected with the drain electrode of metal-oxide-semiconductor TR1；One end of coupling inductance L2 and input negative connect, coupling electricity
The other end of sense L2 is connected with the source electrode of metal-oxide-semiconductor TR2；The pressure is connected as input capacitance Cin1 and input capacitance Cin2
Series connection node A, metal-oxide-semiconductor TR1 and the series connection node B of metal-oxide-semiconductor TR2, output capacitance Co1 and output capacitance Co2 series connection node
C is connected.
External drive circuit generates driving signal, drives the metal-oxide-semiconductor TR1 and metal-oxide-semiconductor TR2 Simultaneous Switching, controls defeated
Voltage stabilization out.
That end that end that coupling inductance L1 and input are just being connected is connected with coupling inductance L2 and TR2 source electrode is of the same name each other
End.
The coupling inductance L1 and coupling inductance L2 are simultaneously wound on same magnetic core, and the coupling inductance L1 and coupling
The circle number for closing inductance L2 is identical.
The external drive circuit is magnetic isolation drive circuit.
Fig. 3 shows the circuit diagram of the specific embodiment of the invention, and Fig. 4-1~Fig. 4-4 is the specific embodiment of the invention
Working condition in different modes, work wave when coupling completely referring to Fig. 5 inductance is to pressure working principle of the invention
It is described as follows:
1) the case where, magnetic flux equal for two number of winding turns couples completely, coefficient of coup k=1 set L1=L2=L, mutually
SenseVL1=VL2.
T0~t1:MOS pipe TR1 conducting, metal-oxide-semiconductor TR2 shutdown, metal-oxide-semiconductor TR1 drain-source voltage Vds_TR1=0V, inductance L1
Voltage is equal to input capacitance Cin1 voltage, i.e. VL1=Vin1；Metal-oxide-semiconductor TR2 drain-source voltage is equal to input capacitance Cin2 voltage
Inductance L2 voltage is subtracted, i.e. Vds_TR2=Vin2-VL2 can obtain Vds_TR2=Vin2-Vin1；
T1~t2:MOS pipe TR1, TR2 while in the conductive state, Vds_TR1=0V, Vds_TR2=0V rectifying tube D1,
D2 reversely ends, at this time VD1=Vo1, VD2=Vo2, and inductance L1 voltage is equal to input capacitance Cin1 voltage, inductance L2 voltage etc.
In input capacitance Cin2 voltage, i.e. VL1=Vin1, VL2=Vin2；Since two inductive drops coupled completely are equal, i.e. VL1
=VL2, so as to obtain Vin1=Vin2, i.e. input capacitance is pressed；
T2~t3:MOS pipe TR1 shutdown, metal-oxide-semiconductor TR2 are still connected；Electric current is reduced to zero in t3 moment inductance L1, due to
Magnetic flux cannot be mutated, and be coupled by magnetic flux, and electric current increases same amount on inductance L2；Since metal-oxide-semiconductor TR2 is still connected, in L2
Electric current continues growing；
T3~t4:MOS pipe TR1 and TR2 is in an off state simultaneously, rectifying tube D1, D2 forward conduction, metal-oxide-semiconductor TR1 with
TR2 drain-source voltage is respectively by Co1, Co2 capacitor voltage clamped, i.e. Vds_TR1=Vo1, Vds_TR2=Vo2；The t3 moment,
Metal-oxide-semiconductor TR2 shutdown, is coupled by magnetic flux, and magnetic flux is reduced in coil L2, magnetic flux increases in L1, until magnetic flux phase in L1 and L2
Deng, thus L1 is equal with electric current in L2, L1 connects with L2 to work as inductance, inductive current iL, and pressure connects upper electric current ij
=0；Curent change rule isInductive current linearly reduces；Output capacitance
Co1 voltage is Vo1=Vin1-VL1, and output capacitance Co2 voltage is Vo2=Vin2-VL2；Due to Vin2=Vin1, VL1=
VL2, to haveI.e. output capacitance is equal
Pressure, metal-oxide-semiconductor TR1 and TR2 drain-source voltage are pressed, the reversed blanking voltage of rectifying tube D1 and D2 is pressed.
The t4 moment opens another period.
2) the case where equal for two number of winding turns, magnetic flux coefficient of coup k < 1, does qualitative analysis, sets L1=L2=L, mutually
SenseThere is following relationship under any state:
Coupling inductance voltage:
Metal-oxide-semiconductor TR1 and TR2 drain-source voltage:
Rectifying tube D1, D2 voltage: VD1=Vo1-Vds_TR1, VD2=Vo2-Vds_TR2.
When only one metal-oxide-semiconductor such as TR1 conducting, then the voltage of another metal-oxide-semiconductor isDue to Vds_TR2≤0V, that is to say, that Vin2≤kVin1, input
Capacitor voltage equalizing error is less than 1-k.
When metal-oxide-semiconductor TR1, TR2 are simultaneously turned on, rectifying tube D1, D2 reversed cut-off simultaneously, Vin2=VL2, Vin1=VL1,
VD1=Vo1, VD2=Vo2；
When metal-oxide-semiconductor TR1, TR2 are simultaneously turned off, rectifying tube D1, D2 are simultaneously turned on, Vds_TR1=0V, Vds_TR2=
0V, Vo1=Vin1-VL1, Vo2=Vin2-VL2；
With the propulsion of time,It can become closer toTo
Make VL2 and VL1 close to equal；The coefficient of coup is faster close to equal speed with VL1 closer to 1, VL2, so that Vin2 be promoted to get over
Fastly close to Vin1, Vo2 is faster close to Vo1；
It is worth noting that when metal-oxide-semiconductor TRx (x=1,2) cannot in Lx (x=1,2) when entering shutdown from state
Magnetic flux (L-M) iLx for being coupled to another inductance is equivalent to the leakage inductance with initial current, will make corresponding rectifying tube Dx (x=
1,2) it is connected and transfers energy to corresponding output capacitance Cox (x=1,2).
The equalizing effect of the invention, equalizing effect and inductive coupling coefficient when k=1 and k=0.95 is set forth in following table
It is closely related, it holds up difference and is less than the non-coupled part proportion (1-k) of inductance.On same magnetic core and around two windings,
Its coefficient of coup is easily controlled 0.98 or more, thus the equalizing effect of circuit of the present invention can be fine.
Particularly, since pressure equalizing occurs during metal-oxide-semiconductor is opened, thus even if three level Boost circuit works
Make the pressure characteristic that circuit is nor affected under discontinuous mode.
Feedback control circuit sampling and outputting voltage generates control signal, controls the switch of TR1 and TR2 through driving circuit to control
Output voltage processed；
Preferably, the driving circuit is magnetic isolation drive circuit.
Disclosed above is only a specific embodiment of the invention, but the present invention is not limited to this, any ability
Several modifications that the technical staff in domain carries out the present invention under the premise of without departing from core of the invention thought should be fallen in
Protection scope of the claims in the present invention etc.
Claims (3)
1. a kind of three level Boost circuits, including input capacitance Cin1, input capacitance Cin2, output capacitance Co1, output capacitance
Co2, metal-oxide-semiconductor TR1, metal-oxide-semiconductor TR2, rectifying tube D1, rectifying tube D2；Input capacitance Cin1 connects with input capacitance Cin2, input electricity
One end connection for holding Cin1 inputs just, and the other end connects one end of input capacitance Cin2, the other end connection of input capacitance Cin2
Input is negative；Metal-oxide-semiconductor TR1 and metal-oxide-semiconductor TR2 series connection, the drain electrode of the source electrode connection metal-oxide-semiconductor TR2 of metal-oxide-semiconductor TR1, the drain electrode of metal-oxide-semiconductor TR1
Connect the anode of rectifying tube D1；The cathode of the source electrode connection rectifying tube D2 of metal-oxide-semiconductor TR2, the grid and metal-oxide-semiconductor TR2 of metal-oxide-semiconductor TR1
Grid connect external drive circuit；Just, the anode connection output of rectifying tube D2 is negative for the cathode connection output of rectifying tube D1；
It presses it is characterized by also including coupling inductance L1, coupling inductance L2 and and connects；One end of coupling inductance L1 and input are just
It is connected, the other end of coupling inductance L1 is connected with the drain electrode of metal-oxide-semiconductor TR1；One end of coupling inductance L2 and input negative connect, coupling
The other end of inductance L2 is connected with the source electrode of metal-oxide-semiconductor TR2；The pressure is connected as input capacitance Cin1 and input capacitance
Series connection node A, the metal-oxide-semiconductor TR1 of Cin2 connects with the series connection node B of metal-oxide-semiconductor TR2, output capacitance Co1 with output capacitance Co2's
Node C is connected.
2. a kind of three level Boosts circuit according to claim 1, it is characterised in that: external drive circuit generates driving
Signal drives the metal-oxide-semiconductor TR1 and metal-oxide-semiconductor TR2 Simultaneous Switching, controls output voltage stabilization；
Transmission delay, switch duration is allowed also to allow to have differences between metal-oxide-semiconductor TR1 and the driving signal of metal-oxide-semiconductor TR2.
3. a kind of three level Boosts circuit according to claim 2, it is characterised in that: the coupling inductance L1 and input
That just connected end be coupled that end that inductance L2 and TR2 source electrode is connected Same Name of Ends each other.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710619532.7A CN107453606B (en) | 2017-07-26 | 2017-07-26 | A kind of three level Boost circuits |
| PCT/CN2018/095593 WO2019019928A1 (en) | 2017-07-26 | 2018-07-13 | Three-level boost circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710619532.7A CN107453606B (en) | 2017-07-26 | 2017-07-26 | A kind of three level Boost circuits |
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| CN107453606A CN107453606A (en) | 2017-12-08 |
| CN107453606B true CN107453606B (en) | 2019-06-25 |
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| WO (1) | WO2019019928A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107453606B (en) * | 2017-07-26 | 2019-06-25 | 广州金升阳科技有限公司 | A kind of three level Boost circuits |
| CN108471235A (en) * | 2018-03-28 | 2018-08-31 | 江苏固德威电源科技股份有限公司 | The two-way DC/DC circuits of three level |
| CN109327136B (en) * | 2018-11-29 | 2024-02-06 | 南京信息工程大学 | Three-level boosting type direct current conversion topology based on coupling winding unit |
| CN109560702B (en) * | 2018-12-19 | 2024-03-22 | 南京信息工程大学 | DC three-level boost converter integrating coupling inductance technology |
| CN111490567A (en) * | 2019-01-28 | 2020-08-04 | 青岛海信移动通信技术股份有限公司 | Mobile terminal and power supply control method thereof |
| CN110098730A (en) * | 2019-06-11 | 2019-08-06 | 阳光电源股份有限公司 | A kind of three-level Boost converter, control method and photovoltaic system |
| CN111654183B (en) * | 2020-06-12 | 2021-10-29 | 深圳英飞源技术有限公司 | DC-DC conversion device and control method thereof |
| CN113422530B (en) * | 2021-08-09 | 2022-10-28 | 弘正储能(上海)能源科技有限公司 | Control method for ensuring voltage balance of positive and negative direct current buses by energy storage inverter |
| CN117616680A (en) * | 2021-12-14 | 2024-02-27 | 华为技术有限公司 | Balancer circuit for series connection of two DC link capacitors, method for controlling balancer circuit, and converter device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI292248B (en) * | 2003-05-01 | 2008-01-01 | Delta Electronics Inc | Alternative control method for application to boost converter |
| KR20060055415A (en) * | 2004-11-18 | 2006-05-23 | 학교법인 동국대학교 | Three level dc-dc converter using zero voltage and zero current switching |
| CN100358227C (en) * | 2005-08-08 | 2007-12-26 | 南京航空航天大学 | Zero voltage switch three lever double tube positive exciting DC converter with clamp diode |
| CN101197547B (en) * | 2006-12-06 | 2011-02-16 | 台达电子工业股份有限公司 | Three-phase synchronization AC generating circuit and its control method |
| US9385628B2 (en) * | 2014-03-17 | 2016-07-05 | Futurewei Technologies, Inc. | Multilevel inverter device and operating method |
| CN103916008B (en) * | 2014-04-22 | 2017-01-11 | 扬州大学 | Output capacitance voltage-sharing control system and control method for three-level DC converter |
| CN105515381B (en) * | 2016-01-27 | 2018-04-13 | 南京能瑞电力科技有限公司 | Multi-level converter dc-voltage balance circuit |
| CN105743344A (en) * | 2016-04-14 | 2016-07-06 | 西安许继电力电子技术有限公司 | Isolated three-level bidirectional DC-DC converter with coupling inductor |
| CN107453606B (en) * | 2017-07-26 | 2019-06-25 | 广州金升阳科技有限公司 | A kind of three level Boost circuits |
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2017
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| CN107453606A (en) | 2017-12-08 |
| WO2019019928A1 (en) | 2019-01-31 |
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