CN110098813A - Low-power consumption pulse power amplifier - Google Patents
Low-power consumption pulse power amplifier Download PDFInfo
- Publication number
- CN110098813A CN110098813A CN201910268076.5A CN201910268076A CN110098813A CN 110098813 A CN110098813 A CN 110098813A CN 201910268076 A CN201910268076 A CN 201910268076A CN 110098813 A CN110098813 A CN 110098813A
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- 238000002955 isolation Methods 0.000 claims abstract description 16
- 230000008878 coupling Effects 0.000 claims abstract description 4
- 238000010168 coupling process Methods 0.000 claims abstract description 4
- 238000005859 coupling reaction Methods 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 230000001012 protector Effects 0.000 claims abstract description 4
- 230000011664 signaling Effects 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000005457 optimization Methods 0.000 abstract description 5
- 230000003321 amplification Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 101100074846 Caenorhabditis elegans lin-2 gene Proteins 0.000 description 2
- 101100497386 Mus musculus Cask gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The present invention relates to the low-power consumption pulse power amplifiers in a kind of electronic circuit technology field, using D class power amplifier structure, comprising: isolation circuit carries out Phototube Coupling to the input signal of power amplifier；Driving circuit provides full-bridge driving signal using driving chip and auxiliary element for the power MOSFET of rear class；Power MOSFET works in big signaling switch state, forms the full-bridge topologies of D-type power amplifier；Transformer and matching unit, the output voltage of increased wattage MOSFET, and have the function of impedance matching；Self-checking circuit divides the output signal of power amplifier, detection, and the self-test signal of small signal is exported；Circuit is protected, provides over-voltage, overcurrent, overheat protector for power amplifier.The present invention passes through working condition, the parameter of optimization design matching unit of optimized driving circuit and power MOSFET, significantly reduces the power consumption of circuit.
Description
Technical field
The present invention relates to electronic circuit technology fields, specifically, being related to a kind of low-power consumption pulse power amplifier.
Background technique
Transmitter main task is the modulation for completing useful low frequency signal to high frequency carrier, is changed at a certain center
The electromagnetic wave that there is certain bandwidth in frequency, fit through antenna transmitting.It is widely used in TV, broadcasts, the various people such as radar
With, military equipment.It can be divided mainly into frequency modulation transmitter, AM transmitter, the multiple types such as optical sender.
The effect of transmitter be the small power electric signal of input is carried out in time, be converted into low distortion high-power electric signal
Launch.Transmitter is the important component of electronic system, and under high-power applications occasion, transmitter is also electronics simultaneously
Volume maximum, the maximum unit of power consumption in system.With the development of current electronic technology and signal processing technology, hardware realization
It is more efficient out, loss it is smaller, transmitting the higher high performance transmitter of flexibility ratio become more and more important.
Power amplifier is the important component of transmitter, while being also the module most to consume energy in entire transmitter.Function
Rate amplifier is a kind of amplifying circuit for the purpose of exporting relatively high power, it generally directly drives load, and load capacity is eager to excel.
Power amplifier is usually operated under large-scale condition, thus there are do not occurred in voltage amplifier (small signal amplifier)
Output power want as big as possible, efficiency to want the specific questions such as high, power tube heat dissipation.Under high-power applications occasion, it is contemplated that
Power tube radiating requirements, power amplifier are typically designed as pulsed mode, while to the power consumption and efficiency of power amplifier
Propose requirements at the higher level.
Through the retrieval to the prior art, a kind of Chinese invention patent CN201210349841.4, entitled power is put
Big device, the power amplifier include first order unit and second level unit；First order unit receives the high frequency that phaselocked loop transmits
Pulse signal simultaneously carries out square wave shaping to it, so that the level of pulse signal reaches preset threshold value comprising be sequentially connected in series
First phase inverter and the second phase inverter；Second level unit is mutually coupled with first order unit, receives the pulse letter Jing Guo square wave shaping
Number comprising the first gain amplification module and at least one second gain amplification module being sequentially connected in series, second gain amplification
Module includes gain amplification submodule and gain control submodule；The on-off that gain control submodule receives system input controls letter
Number, switch the working condition of corresponding gain amplification submodule, so that the amplified signal of second level unit output different gains.It should
The power amplifier of invention adjusts the gain of power amplifier in real time, improves efficiency power amplifier.But the invention can not lead to
The working condition of optimized driving circuit and power MOSFET, the parameter of optimization design matching unit are crossed, the power consumption of circuit is reduced.
Summary of the invention
In view of the drawbacks of the prior art, the object of the present invention is to provide a kind of low-power consumption pulse power amplifiers.The present invention
It is powered on by upper tube driving in driving circuit using external bootstrap capacity, so that driving power number subtracts significantly compared with other IC driving
It is small；Isolation circuit uses high-speed logic gate photo-coupler, reduces the delay time of optical coupled switch, while can apply in high frequency
Rate occasion；By the working condition of optimized driving circuit and power MOSFET, the parameter of optimization design matching unit, greatly drop
The low power consumption of circuit.
The present invention relates to a kind of low-power consumption pulse power amplifiers, using D class power amplifier structure, including isolation circuit, driving
Circuit, power MOSFET, transformer and matching unit, self-checking circuit, protection circuit；
Isolation circuit carries out Phototube Coupling to the input signal of power amplifier；
Driving circuit provides full-bridge driving signal using driving chip and auxiliary element for the power MOSFET of rear class；
Power MOSFET works in big signaling switch state, forms the full-bridge topologies of D-type power amplifier；
Transformer and matching unit, the output voltage of increased wattage MOSFET, and have the function of impedance matching；
Self-checking circuit divides the output signal of power amplifier, detection, and the self-test signal of small signal is exported；
Circuit is protected, provides over-voltage, overcurrent, overheat protector for power amplifier.
Preferably, the isolation circuit completes the conversion of electrical-optical-electrical, so that electric signal transmission has one-way.
Preferably, the isolation circuit uses high-speed logic gate photo-coupler, so that the porch deformation of electric signal is small,
Waveform is precipitous.
Preferably, the driving circuit has independent low side and high-end input using IR2110 as core driving chip
Channel.
Preferably, the upper tube driving in the driving circuit is powered on using external bootstrap capacity.
Preferably, the matching unit uses L-type matching network form, the L-type matching network include series inductance with
Shunt capacitance.
Compared with prior art, the present invention have it is following the utility model has the advantages that
1, upper tube driving is powered on using external bootstrap capacity in driving circuit, so that driving power number drives compared with other IC
It greatly reduces.
2, isolation circuit uses high-speed logic gate photo-coupler, reduces the delay time of optical coupled switch, while can answer
Used in high-frequency occasion.
3, by the working condition of optimized driving circuit and power MOSFET, the parameter of optimization design matching unit, greatly
Ground reduces the power consumption of circuit.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon:
Fig. 1 is the operation principle schematic diagram for showing low-power consumption pulse power amplifier in the specific embodiment of the invention；
Fig. 2 is the driving circuit and power MOSFET circuit work original for showing specific embodiment of the invention intermediate power amplifier
Manage schematic diagram；
Fig. 3 is the match circuit structural schematic diagram for showing specific embodiment of the invention intermediate power amplifier.
Description of symbols
Hin_1: first group of high-end input signal in driving circuit, Lin_1: first group of low side input in driving circuit
Signal,
Hin_a: first group of high-end output signal in driving circuit, Lin_a: first group of low side output in driving circuit
Signal,
Hin_2: second group of high-end input signal in driving circuit, Lin_2: second group of low side input in driving circuit
Signal,
Hin_b: second group of high-end output signal in driving circuit, Lin_b: second group of low side output in driving circuit
Signal,
/ SD: the gate control signal of driving chip IR2110 in driving circuit,
Vpower, GND: the high voltage supply voltage and its reference ground of full-bridge circuit,
T1: transformer, L1: the series inductance in matching unit,
C1: the shunt capacitance in matching unit, ZL: load impedance, RL: the active component in load impedance,
CL: the capacitive part in load impedance.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
Embodiment
Below in conjunction with attached drawing, a detailed description of the technical solution in the embodiment of the present invention is provided, description of symbols
See " Detailed description of the invention " part.
Fig. 1 is the operation principle schematic diagram of the low-power consumption pulse power amplifier of the present invention in a specific embodiment.
It is as shown in Figure 1, the low-power consumption pulse power amplifier include isolation circuit, driving circuit, power MOSFET, transformer and
Matching unit, self-checking circuit, protection circuit.
Isolation circuit carries out Phototube Coupling to the input signal of power amplifier, the conversion of electrical-optical-electrical is completed, so that electric
Signal transmission has the characteristics that one-way, improves electrical isolation capabilities and anti-interference ability.
Driving circuit provides full-bridge driving signal using driving chip and auxiliary element for the power MOSFET of rear class.
Power MOSFET constitutes four bridge arms of full bridge structure, and work is in switch state, under driving signal effect sequentially
Conducting.
Transformer and matching unit, the output voltage of increased wattage MOSFET, and have the function of impedance matching.
Self-checking circuit divides the output signal of power amplifier, detection, and the self-test signal of small signal is exported, to facilitate prison
Whether measurement of power puts output state normal.
Circuit is protected, over-voltage, overcurrent, overheat protector is provided for power amplifier, prevents damage of the abnormal conditions to power amplifier.
Further, aforementioned isolation circuit uses high-speed logic gate photo-coupler, to reduce the delay time of optical coupled switch,
So that the porch deformation of electric signal is small, waveform is precipitous, can apply in high-frequency occasion.
Further, aforementioned driving circuit is using IR2110 as core driving chip, small in size, speed is fast, has independent
Low side and high-end input channel, upper tube driving powered on using external bootstrap capacity so that driving power number compared with other IC drive
It is dynamic to greatly reduce.
Further, aforementioned matching unit uses L-type matching network form, which includes a series electrical
Feel L1, a shunt capacitance C1.
Fig. 2 is that the driving circuit of specific embodiment of the invention intermediate power amplifier and power MOSFET circuit working principle are shown
It is intended to.As shown in Fig. 2, driving circuit is by two groups of high low sides under gate control signal/SD control of driving chip IR2110
Input signal (Hin_1, Lin_1, Hin_2, Lin_2) exports two groups high low side driving letter after two IR2110 driving chips
Number (Hin_a, Lin_a, Hin_b, Lin_b).This four high low-side drive signal Hin_a, Lin_a, Hin_b, Lin_b are used to make
For the gate drive signal of rear class power MOSFET, the power MOSFET work of rear class forms D class function in big signaling switch state
The full-bridge topologies of rate amplifier.Vpower and GND is used to provide high voltage supply to full-bridge circuit and with reference to ground.In four height
Under the control of low-side drive signal Hin_a, Lin_a, Hin_b, Lin_b, full-bridge circuit output signals to the transformer of rear class into
Row boost in voltage, the signal after boosting are transported to load Z after matching unitLOn, particularly, in this circuit arrangement, transformer
Has the function of impedance matching.
Fig. 3 is the match circuit structural schematic diagram of specific embodiment of the invention intermediate power amplifier.As shown in figure 3, full-bridge
After the signal of circuit output is sent to the primary of transformer T1, boost according to transformation ratio, the high-voltage signal entrance after boosting
With unit.
Under normal conditions, internal resistance Rds (on) of the power MOSFET selected in full-bridge circuit in conducting is usual
Very little (tens milliohms), and load impedance ZLTypically much deeper than this, so matching unit is designed as by series inductance L1 and parallel connection
The L-type matching network form of capacitor C1 composition.It is equivalent apparently, series inductance L1 has the function of increasing prime impedance, electricity in parallel
Holding C1 has the function of reducing successive load impedance, and the impedance of front and back is finally made to realize matching.In addition, the type matching network
It is a kind of simplest net resistance matching network, also has the advantages that circuit structure is simple, via net loss is small.
In conclusion upper tube driving is powered on using external bootstrap capacity in driving circuit, so that driving power number is compared with it
He greatly reduces in IC driving；Isolation circuit uses high-speed logic gate photo-coupler, reduces the delay time of optical coupled switch, simultaneously
It can apply in high-frequency occasion；Pass through the working condition of optimized driving circuit and power MOSFET, optimization design matching unit
Parameter, significantly reduce the power consumption of circuit.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make a variety of changes or modify within the scope of the claims, this not shadow
Ring substantive content of the invention.In the absence of conflict, the feature in embodiments herein and embodiment can any phase
Mutually combination.
Claims (6)
1. a kind of low-power consumption pulse power amplifier, which is characterized in that the low-power consumption pulse power amplifier uses D class power amplifier
Structure, including isolation circuit, driving circuit, power MOSFET, transformer and matching unit, self-checking circuit, protection circuit；
Isolation circuit carries out Phototube Coupling to the input signal of power amplifier；
Driving circuit provides full-bridge driving signal using driving chip and auxiliary element for the power MOSFET of rear class；
Power MOSFET works in big signaling switch state, forms the full-bridge topologies of D-type power amplifier；
Transformer and matching unit, the output voltage of increased wattage MOSFET, and have the function of impedance matching；
Self-checking circuit divides the output signal of power amplifier, detection, and the self-test signal of small signal is exported；
Circuit is protected, provides over-voltage, overcurrent, overheat protector for power amplifier.
2. low-power consumption pulse power amplifier according to claim 1, characterized in that the isolation circuit completes electrical-optical-
The conversion of electricity, so that electric signal transmission has one-way.
3. low-power consumption pulse power amplifier according to claim 2, characterized in that the isolation circuit is patrolled using high speed
Door photo-coupler is collected, so that the porch deformation of electric signal is small, waveform is precipitous.
4. low-power consumption pulse power amplifier according to claim 1, characterized in that the driving circuit is made with IR2110
For core driving chip, there is independent low side and high-end input channel.
5. low-power consumption pulse power amplifier according to claim 4, characterized in that the upper tube in the driving circuit is driven
It is dynamic to be powered on using external bootstrap capacity.
6. low-power consumption pulse power amplifier according to claim 1, characterized in that the matching unit uses L-type
Distribution network form, the L-type matching network includes series inductance and shunt capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910268076.5A CN110098813A (en) | 2019-04-03 | 2019-04-03 | Low-power consumption pulse power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910268076.5A CN110098813A (en) | 2019-04-03 | 2019-04-03 | Low-power consumption pulse power amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN110098813A true CN110098813A (en) | 2019-08-06 |
Family
ID=67444359
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910268076.5A Pending CN110098813A (en) | 2019-04-03 | 2019-04-03 | Low-power consumption pulse power amplifier |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201499137U (en) * | 2009-09-09 | 2010-06-02 | 武汉新瑞科电气技术有限公司 | Power amplifier |
| CN104135274A (en) * | 2014-06-26 | 2014-11-05 | 中国电子科技集团公司第十四研究所 | Electromagnetic coupling high-power driving circuit |
| CN208675209U (en) * | 2018-09-19 | 2019-03-29 | 杭州矢志信息科技有限公司 | High-power high-efficiency sonar transmitter |
-
2019
- 2019-04-03 CN CN201910268076.5A patent/CN110098813A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201499137U (en) * | 2009-09-09 | 2010-06-02 | 武汉新瑞科电气技术有限公司 | Power amplifier |
| CN104135274A (en) * | 2014-06-26 | 2014-11-05 | 中国电子科技集团公司第十四研究所 | Electromagnetic coupling high-power driving circuit |
| CN208675209U (en) * | 2018-09-19 | 2019-03-29 | 杭州矢志信息科技有限公司 | High-power high-efficiency sonar transmitter |
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Application publication date: 20190806 |
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| RJ01 | Rejection of invention patent application after publication |