CN102445711A - THz-wave detector - Google Patents
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- CN102445711A CN102445711A CN2010102976335A CN201010297633A CN102445711A CN 102445711 A CN102445711 A CN 102445711A CN 2010102976335 A CN2010102976335 A CN 2010102976335A CN 201010297633 A CN201010297633 A CN 201010297633A CN 102445711 A CN102445711 A CN 102445711A
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Abstract
The invention discloses a THz-wave detector, which uses a high-electron-mobility field effect transistor (FET) with higher two-dimensional electron concentration as a basic structure unit, wherein the FET is provided with a source electrode, a gate electrode and a drain electrode. The THz-wave detector is characterized in that the device structure of the THz-wave detector comprises three lead electrodes, three low pass filters and a group of THz-wave coupled antennas, wherein the three electrodes of the FET and the THz-wave coupled antennas are connected to jointly serve as antennas; and the three electrodes of the FET are respectively connected with the corresponding lead electrodes through the low pass filters. The THz-wave detector has the advantages that the antennas are separated from the lead electrodes through the low pass filters, so the resonance performance of the antennas can be guaranteed, and the decrease of the device responsivity, which is caused by the leakage of high frequency THz-wave signals produced by the antennas to the lead electrodes through straight conducting wires, is prevented; and an ohmic contact is simultaneously provided with the source electrode, the drain electrode and the antennas, so the device structure is compact, the integration is facilitated, and a foundation is laid for the realization of the arraying and large-scale application of the THz-wave detector.
Description
Technical field
The present invention relates to a kind of wave spectrum sniffer, relate in particular to a kind of wave spectrum sniffer of at ambient temperature the THz ripple being realized high speed, high sensitivity, high s/n ratio detection, belong to THz wave detection study technical field.
Background technology
Terahertz (Terahertz, THz) radiation is the general designation to the electromagnetic radiation of a specific band, typically refer to frequency 0.1THz～10THz (electromagnetic wave of wavelength in the scope of 3mm～30um), it in electromagnetic wave spectrum between microwave and infrared radiation.In person in electronics, the electromagnetic wave of this wave band is known as millimeter wave and submillimeter wave again; And in field of spectroscopy, it also is called as far infrared.
Why terahertz emission causes our keen interest, is because it has the character and the application prospects of a lot of uniquenesses.Terahertz radiation source has: characteristics such as wideband property, perspectivity, security; So it is at basic fields such as physics, chemistry, biomedicines, and the identification of anti-terrorism, counterfeit money, there are noninvasive imaging, safety inspection, spectral analysis and radar communication aspect that important application prospects is arranged.
The same with the terahertz emission source, it also is another gordian technique in the Terahertz science and technology that Terahertz is surveyed, and also is that Terahertz Technology is used another key link of putting into practical application.Because the radiation power of Terahertz light source is generally all lower at present; And existing terahertz wave detector generally has response speed slow (like pyroelectric detector), look-in frequency narrow (like schottky diode), poor sensitivity (like Golay detector Golay cell) and the shortcoming that needs low-temperature working (like bolometer), thus develop a kind of high speed, high sensitivity, high noise and the terahertz wave detector that can work at ambient temperature particularly important.
Dyakonov and Shur at first explained the instability of field effect transistor ionic medium bulk wave theoretically with the shallow-water wave model in 1993, draw that field effect transistor ionic medium bulk wave can give off the THz ripple under certain boundary condition.They find that in 1996 the Instability Theory of two-dimensional electron gas (2DEG) can be applied to the detection of THz ripple; And from experimentally having realized detection to THz wave; But this type device generally needs work at low temperatures, and sensitivity is lower, and noise ratio is bigger.
Summary of the invention
Defective in view of above-mentioned prior art existence; The objective of the invention is to propose a kind of is basic structure with high electron mobility field-effect transistor (HEMT); Be aided with integrated special bowtie (butterfly) antenna and the terahertz wave detector of low-pass filter, the final detection that realizes at ambient temperature THz wave height speed, high sensitivity, high noise.
Above-mentioned purpose of the present invention will be achieved through following technical scheme:
A kind of terahertz wave detector; Comprise lens, detecting element, signal amplifier and power supply; Said detecting element is a basic structural unit with the high electron mobility field-effect transistor with higher two-dimentional electron concentration; And said field effect transistor has source electrode, gate electrode and drain electrode; It is characterized in that: the detecting element structure of said terahertz wave detector comprises three lead-in wires electrode, three low-pass filters and one group of THz wave coupled antenna, and three electrodes of said field effect transistor link to each other with the THz wave coupled antenna, jointly as antenna; And said three electrodes link to each other with corresponding lead-in wire electrode through low-pass filter respectively.
Further, said high electron mobility field-effect transistor comprises that at least aluminum gallium nitride/gallium nitrogen transistor and gallium aluminium arsenic/gallium arsenic transistor etc. have a kind of in the transistor of higher two-dimensional electron gas.
Above-mentioned purpose of the present invention, realize through following technical scheme preparation:
(1) at first the material with higher two-dimentional electron concentration is carried out surface clean, and obtain prefabricated film through laser scribing;
(2) use ultraviolet photolithographic method and plasma etching method, on prefabricated film, etch the active area table top, comprise two-dimensional electron gas raceway groove, Ohmic contact zone and ultraviolet photolithographic mark;
(3) use the atomic layer deposition method, at the insulated gate medium of whole prefabricated film superficial growth one deck alundum (Al, said prefabricated film surface includes the source region table top;
(4) utilize ultraviolet photolithographic and wet etching to prepare the Ohmic contact window in the Ohmic contact zone;
(5) utilize electron-beam vapor deposition method and lift-off stripping technology to prepare source, drain electrode, and make source, drain electrode form Ohmic contact through high annealing;
(6) prepare antenna structure through ultraviolet photolithographic, electron beam evaporation and lift-off stripping technology successively; Prepare the nanometer gate electrode through beamwriter lithography, electron beam evaporation and lift-off stripping technology; And add thick electrode through ultraviolet photolithographic, electron beam evaporation and the preparation of lift-off stripping technology;
(7) adopt semiconductor packaging, the finished product of step (6) is encapsulated.
The technical scheme of embodiment of the present invention, its innovation advantage applies exists:
1, follows the lead-in wire electrode isolation to antenna through low-pass filter, can guarantee the resonance performance of antenna, can stop the high frequency THz ripple signal that produces by antenna to leak the decline that causes the response device degree to the lead-in wire electrode through straight lead;
2, overcome owing to the influence of the low frequency signal that produces of resonance effect of lead-in wire electrode, thereby improved detector sensitivity result of detection;
3, Ohmic contact is source, drain electrode and antenna structure simultaneously, makes component compact, be convenient to integrated, for array and the large-scale application that realizes terahertz wave detector lays the foundation.
Description of drawings
Fig. 1 is the structure front elevational schematic of terahertz wave detector one embodiment detecting element of the present invention;
Fig. 2 is the structure schematic side view of detecting element shown in Figure 1;
Fig. 3 is the Experimental equipment of terahertz wave detector of the present invention;
Fig. 4 is the electromagnetic photocurrent response figure of 903GHz to frequency for terahertz wave detector of the present invention under room temperature and liquid nitrogen temperature;
Fig. 5 is the power response degree figure of terahertz wave detector of the present invention under room temperature and liquid nitrogen temperature;
Fig. 6 is the synoptic diagram that concerns of antenna in the terahertz wave detector of the present invention and THz wave polarised direction.
The implication of each mark is in the diagram:
1～lead-in wire electrode, 2～low-pass filter, 3～THz wave coupled antenna, 4～source electrode, 5～drain electrode, 6～gate electrode, 7～active area table top, 8～Er Weidianziqi &2DEG, 9～Sapphire Substrate
Embodiment
Following constipation closes the embodiment accompanying drawing, and specific embodiments of the invention is done further to detail, so that technical scheme of the present invention is easier to understand, grasp.
The experiment structure of conventional terahertz wave detector is understood; As shown in Figure 3; The common detector includes lens (off-axis aspheric mirror), detecting element, signal amplifier and power supply etc.; Wherein detecting element is a basic structural unit with the high electron mobility field-effect transistor with higher two-dimentional electron concentration, and field effect transistor has three electrodes, is respectively source electrode, gate electrode and drain electrode.Designer of the present invention is to the defective and the key to the issue of traditional GaN/AlGaN HEMT high sensitivity terahertz detector in the background technology, and through studying repeatedly and testing, innovation has proposed the organization plan to detecting element.Specifically as depicted in figs. 1 and 2:
The detecting element structure of said terahertz wave detector comprises three lead-in wire electrodes, three low-pass filters 2 and one group of THz wave coupled antenna 3 (hereinafter to be referred as antenna); Three electrodes of field effect transistor link to each other with the THz wave coupled antenna, jointly as antenna; And three electrodes 4,5,6 link to each other with corresponding lead-in wire electrode 1 through a low-pass filter respectively.Wherein this field effect transistor is a HEMT, has higher two-dimensional electron gas, optionally comprises a kind of in other transistors such as aluminum gallium nitride/gallium nitrogen transistor and gallium aluminium arsenic/gallium arsenic transistor.As shown in Figure 2, it also comprises the active area table top 7 and the two-dimensional electron gas (2DEG) 8 of Sapphire Substrate 9 surface-ripe prepared.
Low-pass filter in a kind of terahertz wave detector of the present invention both can replace straight lead to connect source, drain electrode and lead-in wire electrode; Can play the effect of filtering again; Promptly get rid of the interference that detector receives other low frequency signals; Guarantee the resonance performance of antenna in the device, be that electromagnetic wave about 1THz is accurately surveyed to frequency, thereby improve detector sensitivity and signal to noise ratio (S/N ratio).
From the method for making of terahertz wave detector of the present invention, it comprises step:
(1) at first the material with higher two-dimentional electron concentration is carried out surface clean, and to make the length of side through laser scribing is 1.5 centimetres prefabricated film;
(2) use ultraviolet photolithographic method and plasma etching method, on prefabricated film, etch the active area table top, comprise two-dimensional electron gas raceway groove, Ohmic contact zone and ultraviolet photolithographic mark;
(3) use the atomic layer deposition method, go up the gate medium that growth one layer thickness is about the alundum (Al of 10 nanometers on whole prefabricated film surface (including the source region table top);
(4) utilize ultraviolet photolithographic and wet etching to prepare the Ohmic contact window in the Ohmic contact zone;
(5) utilize electron-beam vapor deposition method and lift-off stripping technology to prepare source, drain electrode, and high annealing make source, drain electrode form Ohmic contact; Spacing between above-mentioned source electrode and the drain electrode is very for a short time to be about 3 microns, and grid length is 700 nanometers.
(6) prepare antenna structure Ni/Au (20/80nm) through ultraviolet photolithographic, electron beam evaporation and lift-off stripping technology successively; Prepare the nanometer gate electrode through beamwriter lithography, electron beam evaporation and lift-off stripping technology; And add thick electrode through ultraviolet photolithographic, electron beam evaporation and the preparation of lift-off stripping technology;
(7) adopt semiconductor packaging, the finished product of step (6) is encapsulated.
In the process of above-mentioned preparation detector, a little adjustment through the preparation process can make this terahertz wave detector satisfy different working mechanism.
When grid, source electrode separation were big, it was surveyed mechanism and satisfies the self-mixing theory.Under the irradiation of THz wave, because antenna to the response of the THz ripple polarised direction relevant (as shown in Figure 6) with electric field, impinges perpendicularly on the front of detector when THz wave; And when the long limit of antenna followed direction of an electric field parallel, the responsiveness of antenna was maximum, and the photocurrent that obtains is maximum; Impinge perpendicularly on the front of detector when THz wave; And when the long limit of antenna followed direction of an electric field vertical, the responsiveness of antenna was minimum, and the photocurrent that obtains is minimum.Because the coupling of antenna, can be simultaneously in raceway groove the two dimensional electron gas place induce the electric field of horizontal direction (being parallel to raceway groove) and vertical direction (perpendicular to raceway groove), that is: E
xAnd E
zAnd the intensity of induction field can reach the hundred times of incident THz wave electric field intensity; Through regulating gate electrode voltage and then the concentration of two-dimensional electron gas in the raceway groove being regulated and control; Near threshold voltage, the electric field of level side and the electric field generation mixing of vertical direction in the raceway groove, promptly exportable direct current photocurrent is promptly
Wherein g is the differential conductance of device, V
gBe added grid voltage, V
xAnd V
zBe respectively and be parallel to raceway groove and perpendicular to the induced voltage of raceway groove, φ is E
xAnd E
zPhase differential.
When grid, source electrode separation and grid length hour, and gate electrode is with respect to the source, when drain electrode is asymmetric, it is surveyed the shallow-water wave that mechanism satisfies plasma wave and surveys theoretical.If gate electrode is made asymmetric structure, promptly the spacing between grid, the source electrode is not equal to the spacing between grid, the drain electrode, and reduces the length to 10 of gate electrode
2Nanometer scale; Then under the radiation of THz wave, can inspire plasma wave, because the asymmetry of device architecture, (be bias direct current voltage in addition constant between grid, the source electrode under certain boundary condition; And constant in addition bias direct current electric current between source, drain electrode); Because the instability of plasma wave just can produce the direct current photovoltage, satisfy the shallow-water wave of plasma wave and survey theoretical.
No matter survey mechanism and satisfy which kind of theory; Terahertz wave detector at room temperature can both well be surveyed the THz ripple among the present invention; Its photocurrent, noise constant power and responsiveness are respectively: 1.2nA,
and 37mA/W; Effect on Detecting is better under liquid nitrogen temperature, like Fig. 4 and shown in Figure 5.
We can see under room temperature and low temperature from Fig. 4, and photocurrent is as the function of grid voltage, and near threshold voltage, reach maximal value, because the derivative of device differential conductance is maximum near threshold voltage, this is better with the self-mixing theory-compliant.Fig. 5 is the power corresponding figures of this device under 300K and 77K; As can be seen from the figure the responsiveness of device has been increased to 462mA/W under liquid nitrogen temperature, and the noise constant power has dropped to
this mainly be since under the low temperature mobility of electronics increase and cause.
Claims (3)
1. terahertz wave detector; Comprise lens, detecting element, signal amplifier and power supply; Said detecting element is a basic structural unit with the high electron mobility field-effect transistor with higher two-dimentional electron concentration; And said field effect transistor has source electrode, gate electrode and drain electrode; It is characterized in that: the detecting element structure of said terahertz wave detector comprises three lead-in wires electrode, three low-pass filters and one group of THz wave coupled antenna, and three electrodes of said field effect transistor link to each other with the THz wave coupled antenna, jointly as antenna; And said three electrodes link to each other with corresponding lead-in wire electrode through a low-pass filter respectively.
2. a kind of terahertz wave detector according to claim 1; It is characterized in that: said high electron mobility field-effect transistor is the transistor with higher two-dimensional electron gas, comprises a kind of in aluminum gallium nitride/gallium nitrogen transistor and the gallium aluminium arsenic/gallium arsenic transistor at least.
3. the preparation method of the said a kind of terahertz wave detector of claim 1 is characterized in that comprising the steps:
(1) at first the material with higher two-dimentional electron concentration is carried out surface clean, and obtain prefabricated film through laser scribing;
(2) use ultraviolet photolithographic method and plasma etching method, on prefabricated film, etch the active area table top, comprise two-dimensional electron gas raceway groove, Ohmic contact zone and ultraviolet photolithographic mark;
(3) use the atomic layer deposition method, at the insulated gate medium of whole prefabricated film superficial growth one deck alundum (Al, said prefabricated film surface includes the source region table top;
(4) utilize ultraviolet photolithographic and wet etching to prepare the Ohmic contact window in the Ohmic contact zone;
(5) utilize electron-beam vapor deposition method and lift-off stripping technology to prepare source, drain electrode, and make source, drain electrode form Ohmic contact through high annealing;
(6) prepare antenna structure through ultraviolet photolithographic, electron beam evaporation and lift-off stripping technology successively; Prepare the nanometer gate electrode through beamwriter lithography, electron beam evaporation and lift-off stripping technology; And add thick electrode through ultraviolet photolithographic, electron beam evaporation and the preparation of lift-off stripping technology;
(7) adopt semiconductor packaging, the finished product of step (6) is encapsulated.
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| CN 201010297633 CN102445711B (en) | 2010-09-30 | 2010-09-30 | THz-wave detector |
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Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102830069A (en) * | 2012-08-17 | 2012-12-19 | 中国计量学院 | Alcohol concentration measuring device by using terahertz anisotropic medium resonance effect and method thereof |
| CN104091837A (en) * | 2014-06-13 | 2014-10-08 | 南京大学 | Terahertz detector based on optical antenna |
| CN104296879A (en) * | 2014-08-27 | 2015-01-21 | 电子科技大学 | Terahertz unit detector |
| CN104332695A (en) * | 2014-08-12 | 2015-02-04 | 中国空空导弹研究院 | Refrigeration-type terahertz/infrared lamination detector |
| CN104596641A (en) * | 2015-01-21 | 2015-05-06 | 中国科学院半导体研究所 | Terahertz wave detector |
| CN105204190A (en) * | 2014-06-10 | 2015-12-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz modulator based on low-dimension electron plasma waves and manufacturing method thereof |
| CN105333951A (en) * | 2015-11-10 | 2016-02-17 | 中国科学院半导体研究所 | Terahertz wave detector based on field effect transistor |
| CN105336809A (en) * | 2015-11-09 | 2016-02-17 | 中国工程物理研究院电子工程研究所 | Terahertz wave detector with array conductive channel structure |
| CN105569658A (en) * | 2015-12-12 | 2016-05-11 | 江苏师范大学 | Coalcutter coal rock distribution recognition device and method adopting terahertz imaging technology |
| CN105923600A (en) * | 2016-06-02 | 2016-09-07 | 上海师范大学 | Amplitude adjustable terahertz near field excitation type molecular sensor and production method thereof |
| CN106374006A (en) * | 2016-10-13 | 2017-02-01 | 中国科学院上海技术物理研究所 | Room-temperature adjustable sub-Terahertz wave detector and preparation method |
| CN106769994A (en) * | 2017-01-19 | 2017-05-31 | 中国科学院上海技术物理研究所 | A kind of Terahertz sub-wavelength resolution imaging device |
| CN107863360A (en) * | 2017-10-26 | 2018-03-30 | 西安交通大学 | Double channel HEMT terahertz detectors |
| CN108615977A (en) * | 2018-03-13 | 2018-10-02 | 江苏大学 | A kind of multi-functional shared on-chip antenna of Terahertz transmitting-receiving |
| CN109297932A (en) * | 2018-08-29 | 2019-02-01 | 北京遥感设备研究所 | A kind of quasi-optical servo scarnning mirror continuous wave reflection imaging system of Terahertz |
| CN109637978A (en) * | 2018-11-30 | 2019-04-16 | 天津大学 | It is drained based on MOSFET and rasterizes THz detector preparation method |
| CN112436071A (en) * | 2020-11-02 | 2021-03-02 | 天津大学 | Silicon-based grating grid terahertz detector based on frequency selective surface |
| CN113175991A (en) * | 2021-03-19 | 2021-07-27 | 清华大学 | Detection device and method for realizing terahertz wave detection |
| CN113639866A (en) * | 2021-08-25 | 2021-11-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Field-effect wide-spectrum detector |
| CN113820752A (en) * | 2021-09-14 | 2021-12-21 | 航天科工哈尔滨风华有限公司 | Direct-drive type microwave scanning reflecting plate rotating and swinging mechanism |
| CN113871514A (en) * | 2021-12-01 | 2021-12-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz detector based on exciton insulator phase characteristics and preparation method thereof |
| CN114039201A (en) * | 2021-11-10 | 2022-02-11 | 中国科学院上海技术物理研究所 | Fractal butterfly terahertz antenna |
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| CN102830069A (en) * | 2012-08-17 | 2012-12-19 | 中国计量学院 | Alcohol concentration measuring device by using terahertz anisotropic medium resonance effect and method thereof |
| CN105204190A (en) * | 2014-06-10 | 2015-12-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz modulator based on low-dimension electron plasma waves and manufacturing method thereof |
| CN104091837B (en) * | 2014-06-13 | 2016-09-28 | 南京大学 | A kind of terahertz detector of optically-based antenna |
| CN104091837A (en) * | 2014-06-13 | 2014-10-08 | 南京大学 | Terahertz detector based on optical antenna |
| WO2015188608A1 (en) * | 2014-06-13 | 2015-12-17 | 南京大学 | Optical antenna-based terahertz detector |
| CN104332695A (en) * | 2014-08-12 | 2015-02-04 | 中国空空导弹研究院 | Refrigeration-type terahertz/infrared lamination detector |
| CN104296879A (en) * | 2014-08-27 | 2015-01-21 | 电子科技大学 | Terahertz unit detector |
| CN104596641A (en) * | 2015-01-21 | 2015-05-06 | 中国科学院半导体研究所 | Terahertz wave detector |
| CN104596641B (en) * | 2015-01-21 | 2017-03-08 | 中国科学院半导体研究所 | Terahertz wave detector |
| CN105336809A (en) * | 2015-11-09 | 2016-02-17 | 中国工程物理研究院电子工程研究所 | Terahertz wave detector with array conductive channel structure |
| CN105333951B (en) * | 2015-11-10 | 2017-11-21 | 中国科学院半导体研究所 | Terahertz wave detector based on field-effect transistor |
| CN105333951A (en) * | 2015-11-10 | 2016-02-17 | 中国科学院半导体研究所 | Terahertz wave detector based on field effect transistor |
| CN105569658A (en) * | 2015-12-12 | 2016-05-11 | 江苏师范大学 | Coalcutter coal rock distribution recognition device and method adopting terahertz imaging technology |
| CN105923600A (en) * | 2016-06-02 | 2016-09-07 | 上海师范大学 | Amplitude adjustable terahertz near field excitation type molecular sensor and production method thereof |
| CN106374006A (en) * | 2016-10-13 | 2017-02-01 | 中国科学院上海技术物理研究所 | Room-temperature adjustable sub-Terahertz wave detector and preparation method |
| CN106769994B (en) * | 2017-01-19 | 2023-05-05 | 中国科学院上海技术物理研究所 | Terahertz sub-wavelength resolution imaging device |
| CN106769994A (en) * | 2017-01-19 | 2017-05-31 | 中国科学院上海技术物理研究所 | A kind of Terahertz sub-wavelength resolution imaging device |
| CN107863360A (en) * | 2017-10-26 | 2018-03-30 | 西安交通大学 | Double channel HEMT terahertz detectors |
| CN107863360B (en) * | 2017-10-26 | 2020-08-18 | 西安交通大学 | Double-channel HEMT terahertz detector |
| CN108615977A (en) * | 2018-03-13 | 2018-10-02 | 江苏大学 | A kind of multi-functional shared on-chip antenna of Terahertz transmitting-receiving |
| CN108615977B (en) * | 2018-03-13 | 2019-11-22 | 泰州市海创新能源研究院有限公司 | A kind of multi-functional shared on-chip antenna of Terahertz transmitting-receiving |
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| CN109637978A (en) * | 2018-11-30 | 2019-04-16 | 天津大学 | It is drained based on MOSFET and rasterizes THz detector preparation method |
| CN112436071A (en) * | 2020-11-02 | 2021-03-02 | 天津大学 | Silicon-based grating grid terahertz detector based on frequency selective surface |
| CN113175991A (en) * | 2021-03-19 | 2021-07-27 | 清华大学 | Detection device and method for realizing terahertz wave detection |
| CN113639866A (en) * | 2021-08-25 | 2021-11-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Field-effect wide-spectrum detector |
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| CN114039201A (en) * | 2021-11-10 | 2022-02-11 | 中国科学院上海技术物理研究所 | Fractal butterfly terahertz antenna |
| CN114039201B (en) * | 2021-11-10 | 2023-11-07 | 中国科学院上海技术物理研究所 | Fractal butterfly terahertz antenna |
| CN113871514A (en) * | 2021-12-01 | 2021-12-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz detector based on exciton insulator phase characteristics and preparation method thereof |
| CN113871514B (en) * | 2021-12-01 | 2022-02-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz detector based on exciton insulator phase characteristics and preparation method thereof |
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