CN104183658A - Potential barrier cascading quantum well infrared detector - Google Patents

Potential barrier cascading quantum well infrared detector Download PDF

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Publication number
CN104183658A
CN104183658A CN201410403444.XA CN201410403444A CN104183658A CN 104183658 A CN104183658 A CN 104183658A CN 201410403444 A CN201410403444 A CN 201410403444A CN 104183658 A CN104183658 A CN 104183658A
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quantum well
thickness
potential barrier
gaas
layer
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Inventor
李宁
李梁
廖开升
景友亮
李志锋
甄红楼
周孝好
王文娟
陆卫
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Shanghai Institute of Technical Physics of CAS
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Shanghai Institute of Technical Physics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Abstract

The invention discloses a potential barrier cascading quantum well infrared detector. According to the potential barrier cascading quantum well infrared detector, a compound semiconductor material serves as a substrate, seven potential barrier layers and quantum well layers different in width are grown on the substrate alternately, and based on the cycle, multiple cycles of multi-quantum wells are grown repeatedly. Due to the adoption of the cascading tunneling structure, a photoelectric signal stronger than that of an existing quantum well infrared detector can be generated in a quantum well area at a low temperature under the irradiation of infrared light, and then the potential barrier cascading quantum well infrared detector is more suitable for a quantum well infrared focal plane device.

Description

A kind of potential barrier cascade quantum trap infrared detector
Technical field
The present invention relates to a kind of quantum trap infrared detector, be specifically related to a kind of potential barrier cascade quantum trap infrared detector.
Background technology
In current quantum type infrared focus plane technology, photosensitive element chip is all made up of the discrete detector pixel of electricity and optics on the space of some guide types.Than mercury-cadmium tellurid detector, quantum trap infrared detector has advantages of Material growth and technical maturity, large area array good uniformity, rate of finished products is high, cost is low, but quantum efficiency is lower, to such an extent as to responsiveness is lower, so particularly important for the optimization of quantum efficiency and responsiveness.
The general principle of quantum trap infrared detector has determined that the quantum efficiency of device is proportional to absorption coefficient, in order to improve the quantum efficiency of device, or in order to increase significantly responsiveness under the detection condition similar, need to increase the electron concentration in quantum well ground state, but the increase of electron concentration directly increases dark current to superlinearity again, directly cause the detectivity of device to decline.Energy position place that the basic physics cause of very large dark current is excitation state exist very high to light absorption the density of electronic states without contribution, if can effectively utilize these redundancy electronic states, there is practical value for the performance improvement of quantum trap infrared detector.
People have proposed a kind of structure of quantum cascade detector at present, based on the auxiliary tunnelling mechanism of phonon, have photovoltaic property.Document L.Gendron et.al. " Quantum cascade photodetector " sees reference, Applied Physics Letters Vol.85, Daniel Hofstetter et.al. " 23GHz operation of a room temperature photovoltaic quantum cascade detector at 5.35 μ m ", although the responsiveness of Applied Physics Letters Vol.89. device is superior not as good as guide type device, but working temperature is higher, and tandem transport mechanism can be applied in guide type device, detection performance is improved.
Summary of the invention
The object of this invention is to provide a kind of Basic Mechanism of potential barrier cascade quantum trap infrared detector, utilize the phonon of photoelectron in coupling quantum well to assist tunnelling mechanism, classical quantum trap infrared detector barrier region is optimized, design a kind of structurally quantum trap infrared detector of uniqueness, increase a kind of photoelectric respone mechanism, its photoelectric properties are obviously strengthened.
Design of the present invention is as follows:
A kind of potential barrier cascade quantum trap infrared detector, it comprises substrate 1, Multiple Quantum Well 2, top electrode 3, bottom electrode 4, is characterized in that:
The structure of described a kind of potential barrier cascade quantum trap infrared detector is: on substrate 1, growth has lower electrode layer, Multiple Quantum Well 2 and upper electrode layer, prepares bottom electrode 4 on lower electrode layer, prepares top electrode 3 on upper electrode layer;
Described substrate 1 is GaAs substrate;
The structure of described Multiple Quantum Well 2 is:
C 1L 1(AL 2AL 2AL 2…A)L 1C 2
Wherein: C 1for lower electrode layer, C 2for upper electrode layer; L 1that thickness is 40 to the wide barrier layer of 60nm; L 2that thickness is 2 to 3nm potential barrier separator; A is the basic probe unit of Multiple Quantum Well coupled structure, and its structure is:
QW 1L 1’QW 2L 2’QW 3L 3’QW 4L 4’QW 5L 5’QW 6L 6’QW 7
C 1with C 2be the heavily doped GaAs thin layer of Si, C 1thickness is 0.5 to 1 μ m, C 2thickness is 2 to 3 μ m; QW 1-QW 7for quantum well layer, wherein QW 1that thickness is the GaAs layer of 6.8 to 8nm Si doping, QW 2-QW 7that thickness is the 2 GaAs layers to the non-doping of 5.4nm; L 1'-L 6' be that thickness is 3.1 to 6nm non-doped with Al GaAs layer; Taking A as single cycle, repeat 30-50 cycle; Described top electrode 3 and bottom electrode 4 are that the Ni of AuGe, 20nm and the Au material of 400nm that deposit thickness is 100nm is successively prepared into;
L 1' QW 2l 2' QW 3l 3' QW 4l 4' QW 5l 5' QW 6l 6' QW 7composition potential barrier cascade structure.
Described upper electrode layer C 2for raster shape, optical grating construction is bidimensional diffraction grating, and in 3 microns of grating cycles, hole is square, and the length of side is 1.5 microns, and the degree of depth is 1.5 microns.
The present invention has following good effect and advantage:
1. the present invention is owing to having adopted potential barrier cascade structure, than conventional photoconduction type quantum trap infrared detector, increase a kind of photovoltaic transport mechanism, the redundancy electronic state of excitation state has been carried out to effective utilization, effectively raised quantum efficiency and the responsiveness of infrared light.
2. the present invention has photoconduction mechanism and photovoltaic mechanism concurrently, under working bias voltage, compares with the quantum trap infrared detector of single photoconduction mechanism and the quanta cascade detector of single photovoltaic mechanism, and its quantum efficiency and responsiveness are higher.
3. the present invention has photovoltaic effect, can directly light signal be changed into voltage signal, and photovoltaic signal is directly proportional to structural cycle number, than photoconduction type device, the accurate output that the present invention more easily realizes photosignal with read.
Brief description of the drawings
Schematic diagram of the present invention is as follows:
Fig. 1 is single cycle potential barrier cascade quantum trap infrared detector photoelectric respone schematic diagram of the present invention, first quantum well QW that rightmost side quantum well is next cycle 1;
Fig. 2 is potential barrier cascade quantum trap infrared detector structural representation of the present invention;
Fig. 3 is the potential barrier cascade quantum trap infrared detector upper electrode layer C of Fig. 2 2the local cross-sectional schematic of amplifying.
Embodiment
Below in conjunction with accompanying drawing, single cycle potential barrier cascade quantum trap infrared detector photoelectric respone principle of the present invention is elaborated: see Fig. 1, under bias voltage, by infrared light in doped quantum well by the electron excitation in ground state on excitation state, form the photoelectron of detector.This photoelectron has two kinds of approach to form photoelectric current: 1) be transported to continuous state, carry out directed transport under extra electric field; 2) assist tunnelling with adjacent coupling quantum well ground state generation phonon, thereby photoelectron is transferred to adjacent quantum well.
1. the preparation of Multiple Quantum Well chip
Example one:
(1) growth of the thin-film material of Multiple Quantum Well chip:
Adopt molecular number extension (MBE) to grow in turn by following structure on GaAs substrate 1, C 1for GaAs:Si, concentration is 10 18/ cm 3, thickness is 0.5 μ m; L 1for Al 0.16ga 0.84as, thickness is 40nm; QW 1for GaAs:Si, concentration is 10 17/ cm 3, thickness is 6.8nm; L 1' be Al 0.16ga 0.84as, thickness is 5.65nm; QW 2for GaAs, thickness is 2nm; L 2' be Al 0.16ga 0.84as, thickness is 3.96nm; QW 3for GaAs, thickness is 2.3nm; L 3' be Al 0.16ga 0.84as, thickness is 3.1nm; QW 4for GaAs, thickness is 2.8nm; L 4' be Al 0.16ga 0.84as, thickness is 3.1nm; QW 5for GaAs, thickness is 3.3nm; L 5' be Al 0.16ga 0.84as, thickness is 3.1nm; QW 6for GaAs, thickness is 4nm; L 6' be Al 0.16ga 0.84as, thickness is 3.1nm; QW 7for GaAs, thickness is 5nm; Then with QW 1to QW 7for one-period, and use L between every two cycles 2for Al 0.16ga 0.84as, thickness is that 2nm does potential barrier isolation, 30 cycles of repeated growth, last regrowth L 1for Al 0.16ga 0.84as, thickness is 40nm; C 2for GaAs:Si, concentration is 10 18/ cm 3, thickness is 2 μ m, forms a Multiple Quantum Well 2.
Width is the GaAs QW of 6.8nm 1in quantum well, ground state and first excited state all form limited local state in quantum well, wherein first excited state position near trap mouth, simultaneously under suitable bias voltage, first excited state and adjacent quantum well QW 2in ground state level differ the energy of approximately longitudinal optical phonon, can assist tunnelling to carry out relaxation by phonon, simultaneously quantum well QW 2, QW 3, QW 4, QW 5, QW 6, QW 7ground state successively all forms the auxiliary tunnelling state of phonon with the ground state of adjacent quantum well.QW in device 1, QW 2, QW 3, QW 4, QW 5, QW 6, QW 77 quantum well structures be combined to form a basic probe unit, form a principle device.
(2) electrode preparation
Top electrode 3 is directly made in the C of top 2on layer, bottom electrode 4 is by corroding part C 1the above material of layer all removed, and exposes C 1layer, then on this layer, prepare bottom electrode 4, see Fig. 2.The Ni of the equal deposited by electron beam evaporation of upper/lower electrode thickness is 100nm successively AuGe, 20nm and the Au material of 400nm are prepared from.
(3) Multiple Quantum Well chip table preparation
At upper electrode layer C 2above make grating by caustic solution, optical grating construction is bidimensional diffraction grating, and in 3 microns of grating cycles, hole is square, and the length of side is 1.5 microns, and the degree of depth is 1.5 microns, sees Fig. 3, makes the infrared luminous energy of incident be coupled in quantum well and go fully, produces quantum well QW 1in electronics from ground state to first excited state transition.
Example two:
(1) growth of the thin-film material of Multiple Quantum Well chip:
Adopt molecular number extension (MBE) to grow in turn by following structure on GaAs substrate 1, C 1for GaAs:Si, concentration is 10 18/ cm 3, thickness is 0.75 μ m; L 1for Al 0.15ga 0.85as, thickness is 50nm; QW 1for GaAs:Si, concentration is 10 17/ cm 3, thickness is 7.6nm; L 1' be Al 0.15ga 0.85as, thickness is 5.8nm; QW 2for GaAs, thickness is 2.2nm; L 2' be Al 0.15ga 0.85as, thickness is 4.1nm; QW 3for GaAs, thickness is 2.5nm; L 3' be Al 0.15ga 0.85as, thickness is 3.3nm; QW 4for GaAs, thickness is 3nm; L 4' be Al 0.15ga 0.85as, thickness is 3.3nm; QW 5for GaAs, thickness is 3.5nm; L 5' be Al 0.15ga 0.85as, thickness is 3.3nm; QW 6for GaAs, thickness is 4.2nm; L 6' be Al 0.15ga 0.85as, thickness is 3.3nm; QW 7for GaAs, thickness is 5.2nm; Then with QW 1to QW 7for one-period, and use L between every two cycles 2for Al 0.15ga 0.85as, thickness is that 2.5nm does potential barrier isolation, 40 cycles of repeated growth, last regrowth L 1for Al 0.15ga 0.85as, thickness is 50nm; C 2for GaAs:Si, concentration is 10 18/ cm 3, thickness is 2.5 μ m, forms a Multiple Quantum Well 2.
Width is the GaAs QW of 7.6nm 1in quantum well, ground state and first excited state all form limited local state in quantum well, wherein first excited state position near trap mouth, simultaneously under suitable bias voltage, first excited state and adjacent quantum well QW 2in ground state level differ the energy of approximately longitudinal optical phonon, can assist tunnelling to carry out relaxation by phonon, simultaneously quantum well QW 2, QW 3, QW 4, QW 5, QW 6, QW 7ground state successively all forms the auxiliary tunnelling state of phonon with the ground state of adjacent quantum well.QW in device 1, QW 2, QW 3, QW 4, QW 5, QW 6, QW 77 quantum well structures be combined to form a basic probe unit, form a principle device.
(2) electrode preparation
Top electrode 3 is directly made in the C of top 2on layer, bottom electrode 4 is by corroding part C 1the above material of layer all removed, and exposes C 1layer, then on this layer, prepare bottom electrode 4, see Fig. 2.The Ni of the equal deposited by electron beam evaporation of upper/lower electrode thickness is 100nm successively AuGe, 20nm and the Au material of 400nm are prepared from.
(3) Multiple Quantum Well chip table preparation
At upper electrode layer C 2above make grating by caustic solution, optical grating construction is bidimensional diffraction grating, and in 3 microns of grating cycles, hole is square, and the length of side is 1.5 microns, and the degree of depth is 1.5 microns, sees Fig. 3, makes the infrared luminous energy of incident be coupled in quantum well and go fully, produces quantum well QW 1in electronics from ground state to first excited state transition.
Example three:
(1) growth of the thin-film material of Multiple Quantum Well chip:
Adopt molecular number extension (MBE) to grow in turn by following structure on GaAs substrate 1, C 1for GaAs:Si, concentration is 10 18/ cm 3, thickness is 1 μ m; L 1for Al 0.14ga 0.86as, thickness is 60nm; QW 1for GaAs:Si, concentration is 10 17/ cm 3, thickness is 8nm; L 1' be Al 0.14ga 0.86as, thickness is 6nm; QW 2for GaAs, thickness is 2.4nm; L 2' be Al 0.14ga 0.86as, thickness is 4.3nm; QW 3for GaAs, thickness is 2.7nm; L 3' be Al 0.14ga 0.86as, thickness is 3.5nm; QW 4for GaAs, thickness is 3.2nm; L 4' be Al 0.14ga 0.86as, thickness is 3.5nm; QW 5for GaAs, thickness is 3.7nm; L 5' be Al 0.14ga 0.86as, thickness is 3.5nm; QW 6for GaAs, thickness is 4.4nm; L 6' be Al 0.14ga 0.86as, thickness is 3.5nm; QW 7for GaAs, thickness is 5.4nm; Then with QW 1to QW 7for one-period, and use L between every two cycles 2for Al 0.14ga 0.86as, thickness is that 3nm does potential barrier isolation, 50 cycles of repeated growth, last regrowth L 1for Al 0.14ga 0.86as, thickness is 60nm; C 2for GaAs:Si, concentration is 10 18/ cm 3, thickness is 3 μ m, forms a Multiple Quantum Well 2.
Width is the GaAs QW of 8nm 1in quantum well, ground state and first excited state all form limited local state in quantum well, wherein first excited state position near trap mouth, simultaneously under suitable bias voltage, first excited state and adjacent quantum well QW 2in ground state level differ the energy of approximately longitudinal optical phonon, can assist tunnelling to carry out relaxation by phonon, simultaneously quantum well QW 2, QW 3, QW 4, QW 5, QW 6, QW 7ground state successively all forms the auxiliary tunnelling state of phonon with the ground state of adjacent quantum well.QW in device 1, QW 2, QW 3, QW 4, QW 5, QW 6, QW 77 quantum well structures be combined to form a basic probe unit, form a principle device.
(2) electrode preparation
Top electrode 3 is directly made in the C of top 2on layer, bottom electrode 4 is by corroding part C 1the above material of layer all removed, and exposes C 1layer, then on this layer, prepare bottom electrode 4, see Fig. 2.The Ni of the equal deposited by electron beam evaporation of upper/lower electrode thickness is 100nm successively AuGe, 20nm and the Au material of 400nm are prepared from.
(3) Multiple Quantum Well chip table preparation
At upper electrode layer C 2above make grating by caustic solution, optical grating construction is bidimensional diffraction grating, and in 3 microns of grating cycles, hole is square, and the length of side is 1.5 microns, and the degree of depth is 1.5 microns, sees Fig. 3, makes the infrared luminous energy of incident be coupled in quantum well and go fully, produces quantum well QW 1in electronics from ground state to first excited state transition.
2. the course of work of device:
Multiple Quantum Well chip is placed in a refrigeration Dewar with infrared band optical window.Infrared response wave band is 6-10 micron, and chip freezes to about 80K.Carefully finely tune the bias voltage 7 of device, form the auxiliary tunnelling condition of good phonon, subsequently infrared light 5 is radiated on Multiple Quantum Well chip, now because exciting of infrared light causes quantum well QW 1in electronics be excited to enter first excited state, now photoelectron has two kinds of transport mechanism: 1) be transported to continuous state, carry out directed transport under extra electric field; 2) assist tunnelling with adjacent even summation quantum well ground state generation phonon, thereby photoelectron is transferred to adjacent quantum well, and this electronics is difficult to oppositely be transported to QW 1in quantum well.Completing of this process just formed photo-signal (6).With respect to conventional quantum trap infrared detector, this structure has increased the transport mechanism based on the auxiliary tunnelling of phonon, has strengthened the responsiveness of device and has improved quantum efficiency.

Claims (2)

1. a potential barrier cascade quantum trap infrared detector, it comprises substrate (1), Multiple Quantum Well (2), top electrode (3), bottom electrode (4), is characterized in that:
The structure of described a kind of potential barrier cascade quantum trap infrared detector is: have lower electrode layer, Multiple Quantum Well (2) and upper electrode layer in the upper growth of substrate (1), on lower electrode layer, prepare bottom electrode (4), on upper electrode layer, prepare top electrode (3);
Described substrate (1) is GaAs substrate;
The structure of described Multiple Quantum Well (2) is:
C 1L 1(AL 2AL 2AL 2…A)L 1C 2
Wherein: C 1for lower electrode layer, C 2for upper electrode layer; L 1that thickness is 40 to the wide barrier layer of 60nm; L 2that thickness is 2 to 3nm potential barrier separator; A is the basic probe unit of Multiple Quantum Well coupled structure, and its structure is:
QW 1L 1’QW 2L 2’QW 3L 3’QW 4L 4’QW 5L 5’QW 6L 6’QW 7
C 1with C 2be the heavily doped GaAs thin layer of Si, C 1thickness is 0.5 to 1 μ m, C 2thickness is 2 to 3 μ m; QW 1-QW 7for quantum well layer, wherein QW 1that thickness is the GaAs layer of 6.8 to 8nm Si doping, QW 2-QW 7that thickness is the 2 GaAs layers to the non-doping of 8nm; L 1'-L 6' be that thickness is 3.1 to 6nm non-doped with Al GaAs layer; Taking A as single cycle, repeat 30-50 cycle; Described top electrode (3) and bottom electrode (4) are that the Ni of AuGe, 20nm and the Au material of 400nm that deposit thickness is 100nm is successively prepared into.
2. a kind of potential barrier cascade quantum trap infrared detector according to claim 1, is characterized in that: said upper electrode layer C 2for raster shape, optical grating construction is bidimensional diffraction grating, and in 3 microns of grating cycles, hole is square, and the length of side is 1.5 microns, and the degree of depth is 1.5 microns.
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Cited By (3)

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CN105789354A (en) * 2016-04-15 2016-07-20 中国科学院上海技术物理研究所 Wide-spectrum quantum cascade infrared detector
CN105957909A (en) * 2016-06-12 2016-09-21 中国科学院上海技术物理研究所 Barrier cascading quantum well infrared detector
CN107706263A (en) * 2017-10-30 2018-02-16 浙江大学 Infrared block impurity band double-color detector and preparation method thereof in a kind of new germanium based photoconduction

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Publication number Priority date Publication date Assignee Title
CN105789354A (en) * 2016-04-15 2016-07-20 中国科学院上海技术物理研究所 Wide-spectrum quantum cascade infrared detector
CN105957909A (en) * 2016-06-12 2016-09-21 中国科学院上海技术物理研究所 Barrier cascading quantum well infrared detector
CN107706263A (en) * 2017-10-30 2018-02-16 浙江大学 Infrared block impurity band double-color detector and preparation method thereof in a kind of new germanium based photoconduction
CN107706263B (en) * 2017-10-30 2020-07-07 浙江大学 Double-color detector and preparation method thereof

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Application publication date: 20141203