CN105634416B - A kind of interior mesh power pipe - Google Patents
A kind of interior mesh power pipe Download PDFInfo
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- CN105634416B CN105634416B CN201510991020.4A CN201510991020A CN105634416B CN 105634416 B CN105634416 B CN 105634416B CN 201510991020 A CN201510991020 A CN 201510991020A CN 105634416 B CN105634416 B CN 105634416B
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- capacitance
- inductance
- circuit
- power pipe
- mesh power
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention discloses a kind of interior mesh power pipes, including input matching circuit, tube core and output matching circuit, the input matching circuit is the monolithic integrated optical circuit being integrated on GaAs substrates, and the output matching circuit is the interior match circuit made on a ceramic substrate.Present invention incorporates the advantages of monolithic integrated optical circuit and interior match circuit, make interior mesh power pipe have with it is wide, stable, efficient, small, power added efficiency is high, powerful advantage, extend interior mesh power pipe simultaneously uses scope, assembly difficulty is reduced, improves homogeneity of product.
Description
Technical field
The present invention relates to a kind of microwave power devices more particularly to a kind of fusion single-chip integration designing technique to match electricity with interior
The interior mesh power pipe of road designing technique advantage.
Background technology
High power solid state microwave device is the core devices of hyundai electronics equipment and communication system, and performance directly determines
Solid-state radar, electronic warfare and the core capabilities index for communicating machine system have vital in the fields such as national defence and communication
Meaning.The demand for development communication band in the fields such as electronics and communication system is more and more wider, and volume is less and less, requires simultaneously
There is higher reliability.Power amplifier realizes high frequency, broadband, miniaturization, high efficiency, bigger work(as one of important module therein
Rate is most important to whole system.
Continuous promoted of device power requires total grid width of tube core increasing, domestic from several millimeters to 30 millimeter or more
The existing tube core for being more than 6 millimeters developed.Since the input impedance of chip is reduced with the increase of grid width, the no-load Q of device
The problem of being worth and become very high, feeding the amplitude imbalance and unbalance in phase of electric signal is increasingly severe, directly utilizes external circuit
The matching carried out in certain bandwidth is extremely difficult, it is therefore desirable to be matched in shell.Interior matching technique is microwave power crystalline substance
The realization of body pipe is powerful must be by approach, it separately designs matching network in the input and output side of device, to its port Impedance
Converted so that between tube core, balanced in signal amplitude and phase between tube core each section, promoted tube core input and
The real part of output impedance carries out power distribution and power combing to tube core matched in participation.
Second generation semi-conducting material GaAs has good high frequency characteristics, and electron mobility is high, and energy gap is big, injection effect
Rate is higher, has high reliability and ripe technique, has a wide range of applications in microwave and millimeter wave, but since GaAs materials exist
Limitation on electrical property and hot property cannot increasingly meet the needs of system in future.III group nitride material of GaN base is made
For the Typical Representative of third generation wide bandgap semiconductor, high temperature, high frequency, HIGH-POWERED MICROWAVES device development in terms of before great development
On the way, AlGaN/GaN heterojunction structures breakdown voltage is high, and can generate the two-dimensional electron gas of high concentration（2DEG）, and have
Very high electron mobility, therefore very high power output density can be obtained, while AlGaN/GaN heterojunction devices can be held
By very high junction temperature, very big concern is obtained in microwave power application aspect, but restrict its development is selling at exorbitant prices.
AlGaN/GaN HEMT（High electron mobility transistor）The impedance ratio of device is larger, is easy to realize in wider frequency range
Matching reduces the complexity of device.
The principal mode of microwave power device has power MMIC（Monolithic integrated microwave circuit）, interior mesh power pipe and power
Three kinds of amplification module.Power MMIC have it is small, with the wide, advantages such as consistency is high, but development cost is relatively high, heavier
Want be assemble it is big to the output matching loss of the limitation of chip area, circuit, chip thickness be thinned it is limited etc. due to
Its output power is caused to be restricted.Interior mesh power amplifier is produced on ceramic substrate or GaAs base due to match circuit
On piece, for power MMIC, power attenuation substantially reduces, and is conducive to improve the power added efficiency of device, improves defeated
Go out power, however the bandwidth of interior mesh power amplifier is difficult to do width, particularly in high frequency X, Ku wave band, due to ghost effect,
Bandwidth can only be done narrower.Therefore it needs to invent a kind of method, with reference to the advantage of monolithic integrated microwave circuit and interior match circuit,
Realize the microwave power device of higher performance.
Invention content
Goal of the invention：It is insufficient existing for monolithic integrated microwave circuit in the prior art and interior mesh power pipe in order to overcome,
The present invention provides a kind of interior mesh power pipe, merges the advantage of monolithic integrated microwave circuit and interior matching technique, reduces power tube
Volume, widen the bandwidth of power tube, improve its consistency, reduce power attenuation, improve the power added efficiency of power tube, carry
High-output power.
Technical solution：A kind of interior mesh power pipe of the present invention, including input matching circuit, tube core and output matching
Circuit, the input matching circuit are the monolithic integrated optical circuit being integrated on GaAs substrates, and the output matching circuit is makes
Interior match circuit on a ceramic substrate.
Advantageous effect：The present invention compared with prior art, since the input matching circuit is using monolithic integrated optical circuit technology,
Relative to the interior match circuit technology made on a ceramic substrate, area greatly reduces, and with broader bandwidth, higher
Working frequency and smaller parasitic parameter influence；Since output matching circuit uses interior Match circuits technology, relative to
Monolithic integrated optical circuit technology, output power loss substantially reduce, and improve the power added efficiency of device, and development cost
It is lower.Present invention incorporates the advantages of monolithic integrated optical circuit designing technique and interior Match circuits technology, interior matching is improved
The overall performance of power tube so that interior mesh power pipe have broader bandwidth, higher efficiency, higher working frequency, compared with
Small area, relatively low cost, extend interior mesh power pipe uses scope, reduces assembly difficulty, improves the one of product
Cause property.
Description of the drawings：
Fig. 1 is the circuit diagram of the present invention；
Fig. 2 is the domain of the present invention；
Fig. 3 is the power out-put characteristic test result of the present invention.
Specific embodiment：
The present invention is further illustrated with specific embodiment below in conjunction with the accompanying drawings.
As shown in Figure 1, the interior mesh power pipe is made of input matching circuit, tube core and output matching circuit.Input
Distribution network is responsible for the input resistant matching of tube core to 50 Ω, and output matching network is responsible for the output impedance of tube core being matched to 50
Ω.The interior mesh power pipe with reference to the advantages of single slice integration technique and interior match circuit technology, improves the globality of power tube
Can, wherein input matching circuit uses single slice integration technique, matching element is integrated on GaAs substrates, so as to reduce power
The volume of pipe, improves the bandwidth and consistency of power tube, and output matching circuit uses interior Match circuits technology, will match
Circuit production on a ceramic substrate, improves the power added efficiency of device, realizes high-power output.
Frequency range in the present embodiment need to reach 2.7GHz ~ 3.5GHz, and bandwidth is about 25%, so wide in order to reach
Bandwidth, input matching circuit use single slice integration technique, and all input matching elements are integrated on GaAs substrates.Input matching
Circuit includes the symmetrical match circuit of two-way parallel connection, upper flow adaptation circuit and lower flow adaptation circuit, respectively by the defeated of tube core
Enter impedance matching to 100 Ω, be equivalent to after in parallel by the input resistant matching of tube core to 50 Ω.Upper flow adaptation circuit includes the
Zero capacitance C0, zero inductance L0, the first inductance L1, the first capacitance C1, the second capacitance C2, the 4th inductance L4, the 6th capacitance C6,
One resistance R1,3rd resistor R3, lower flow adaptation circuit include third capacitance C3, the second inductance L2, third inductance L3, the 5th electricity
Hold C5, the 4th capacitance C4, the 5th inductance L5, second resistance R2, the 4th resistance R4, the 7th capacitance C7, the connection relation of each element
And with gate bias voltage VGConnection relation it is as shown in Figure 1.Wherein capacitance C0, C1, C2, C3, C4, C5, C6, C7 uses lump
Element MIM capacitor, inductance L1, L2, L3, L4, L5 use microstrip structure, are distributed element, resistance R1, R2, R3, R4 are using thin
Film resistance.
Match circuit is produced on ceramic substrate by the output matching circuit in the present embodiment using interior match circuit technology
On, the output impedance of tube core is matched to 50 Ω.Match circuit includes the 8th capacitance C8, the 6th inductance L6, the 7th inductance L7, the
Nine capacitance C9, the 8th inductance L8, the tenth capacitance C10, the 11st capacitance C11, the 9th inductance L9, the tenth inductance L10, the 12nd electricity
Hold C12, the connection relation of each element and with drain dias voltage VDConnection relation it is as shown in Figure 1.Capacitance C10 uses ceramic system
The distribution capacity of work is distributed element, and capacitance C11 uses lamped element MIM capacitor, and capacitance C8, C9 use lamped element MOS
Capacitance.Inductance L6, L7, L8, L9, L10 use microstrip structure, are distributed element.
Tube core in the present embodiment is made on sic substrates, output power density is of 16mm GaN HEMT tube cores
4W/mm.Entirely circuit size is：14mm*6.5 mm, it is compact-sized.The present invention is illustrated in figure 3 in drain voltage VDEqual to 28V
In the case of characteristics of output power test result, it can be seen from the figure that the output power in 2.7GHz ~ 3.5GHz frequency ranges
Less than 50W, power added efficiency is more than 60%.
The above is only the preferred embodiment of the present invention, it should be pointed out that：For the those of ordinary skill of technical field
For, without departing from the principle of the present invention, several improvement and accommodation can also be made, these are improved and accommodation should also regard
For protection scope of the present invention.
Claims (9)
1. a kind of interior mesh power pipe, including input matching circuit, tube core and output matching circuit, it is characterised in that：It is described defeated
It is the monolithic integrated optical circuit being integrated on GaAs substrates to enter match circuit, and the output matching circuit is makes on a ceramic substrate
Interior match circuit, the output matching circuit include the 8th capacitance C8, the 6th inductance L6, the 7th inductance L7, the 9th capacitance C9,
8th inductance L8, the tenth capacitance C10, the 11st capacitance C11, the 9th inductance L9, the tenth inductance L10, the 12nd capacitance C12, institute
State the drain electrode that the 6th inductance L6 mono- terminates the tube core, another termination the 8th capacitance C8 and drain dias voltage VD, the 7th electricity
Sense L7 mono- terminates the drain electrode of the tube core, another termination the 9th capacitance C9 and drain dias voltage VD, described 8th inductance L8 one end
Connect the drain electrode of the tube core, another termination the tenth capacitance C10 and the 11st capacitance C11, the other end of the 11st capacitance C11
The 9th inductance L9 and the tenth inductance L10 is met, the 12nd capacitance C12 of another termination and the output of the tenth inductance L10 are described
8th capacitance C8, the 9th capacitance C9, the tenth capacitance C10, the 9th inductance L9, the 12nd capacitance C12 the other end ground connection.
2. interior mesh power pipe according to claim 1, it is characterised in that：The tube core is GaN HEMT tube cores.
3. interior mesh power pipe according to claim 1 or 2, it is characterised in that：The input matching circuit includes upper branch
Road match circuit and lower flow adaptation circuit, the upper flow adaptation circuit and the lower flow adaptation circuit in parallel and symmetrical,
The upper flow adaptation circuit include zero capacitance C0, zero inductance L0, the first inductance L1, the first capacitance C1, the second capacitance C2,
4th inductance L4, the 6th capacitance C6, first resistor R1,3rd resistor R3, the lower flow adaptation circuit include third capacitance C3,
Second inductance L2, third inductance L3, the 5th capacitance C5, the 4th capacitance C4, the 5th inductance L5, second resistance R2, the 4th resistance R4,
7th capacitance C7, the zero capacitance C0, zero inductance L0, third capacitance C3, the second inductance L2 one termination input signal, institute
State another termination the first inductance L1 and the second capacitance C2 of zero inductance L0, the first capacitance of another termination of the second capacitance C2
Another termination third inductance L3 and the 5th capacitance C5 of C1 and the 4th inductance L4, the second inductance L2, the 5th capacitance C5
Another termination the 4th capacitance C4 and the 5th inductance L5, the other end of the 4th inductance L4 and another termination of the 5th inductance L5
To the grid of the tube core, a termination first resistor R1 and the 6th capacitance C6 of the 3rd resistor R3, another termination gate bias
Voltage VG, termination a second resistance R2 and the 7th capacitance C7, another inclined gate bias voltage V of termination of the 4th resistance R4G, institute
The other end of the other end and the second resistance R2 for stating first resistor R1 is connected to the grid of the tube core, the zero capacitance
C0, third capacitance C3, the first inductance L1, third inductance L3, the first capacitance C1, the 4th capacitance C4, the 6th capacitance C6, the 7th capacitance
The other end of C7 is grounded.
4. interior mesh power pipe according to claim 3, it is characterised in that：The capacitance C0, C1, C2, C3, C4, C5,
C6, C7 are lamped element MIM capacitor.
5. interior mesh power pipe according to claim 3, it is characterised in that：Described inductance L1, L2, L3, L4, L5 are micro-strip
The distributed element of structure.
6. interior mesh power pipe according to claim 3, it is characterised in that：Described resistance R1, R2, R3, R4 are thin-film electro
Resistance.
7. interior mesh power pipe according to claim 3, it is characterised in that：The capacitance C10 is ceramic distributed capacitor,
The capacitance C11 is lamped element MIM capacitor.
8. interior mesh power pipe according to claim 1, it is characterised in that：Described capacitance C8, C9 are lamped element MOS electricity
Hold.
9. interior mesh power pipe according to claim 1, it is characterised in that：Described inductance L6, L7, L8, L9, L10 are micro-
The distributed element of band structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510991020.4A CN105634416B (en) | 2015-12-25 | 2015-12-25 | A kind of interior mesh power pipe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510991020.4A CN105634416B (en) | 2015-12-25 | 2015-12-25 | A kind of interior mesh power pipe |
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| Publication Number | Publication Date |
|---|---|
| CN105634416A CN105634416A (en) | 2016-06-01 |
| CN105634416B true CN105634416B (en) | 2018-06-12 |
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| CN201510991020.4A Active CN105634416B (en) | 2015-12-25 | 2015-12-25 | A kind of interior mesh power pipe |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107124145A (en) * | 2017-03-29 | 2017-09-01 | 中国电子科技集团公司第五十五研究所 | Mesh power pipe in a kind of automatic biasing |
| CN109600119A (en) * | 2018-12-19 | 2019-04-09 | 成都瑞迪威科技有限公司 | A kind of millimetre-wave circuit structure and there is the circuit structure millimeter wave amplifier |
| CN112787605A (en) * | 2020-12-31 | 2021-05-11 | 四川天巡半导体科技有限责任公司 | Power device based on integrated internal matching circuit and processing method thereof |
| CN117595798B (en) * | 2024-01-12 | 2024-03-29 | 四川恒湾科技有限公司 | Circuit and method for improving efficiency of broadband power amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101079015B1 (en) * | 2009-11-18 | 2011-11-01 | 순천향대학교 산학협력단 | Dual Band High Frequency Amplifier using Composite Right/Left Handed Transmission Line |
| CN101740556B (en) * | 2009-12-23 | 2012-06-13 | 四川龙瑞微电子有限公司 | Hybrid microwave integrated circuit |
| CN201869166U (en) * | 2010-12-07 | 2011-06-15 | 广州特信网络技术有限公司 | Ultralow-temperature low-noise amplifier |
| CN202455316U (en) * | 2012-02-29 | 2012-09-26 | 西安空间无线电技术研究所 | Internally matched amplifier |
| CN104900539B (en) * | 2015-06-10 | 2017-06-09 | 中国电子科技集团公司第十三研究所 | Realize efficient broadband, the internally matched device preparation method of small size low cost |
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