CN206740283U - Pressure sensitive layer, piezoresistive pressure sensor and pressure drag type pressure sensor array - Google Patents
Pressure sensitive layer, piezoresistive pressure sensor and pressure drag type pressure sensor array Download PDFInfo
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- CN206740283U CN206740283U CN201720424963.3U CN201720424963U CN206740283U CN 206740283 U CN206740283 U CN 206740283U CN 201720424963 U CN201720424963 U CN 201720424963U CN 206740283 U CN206740283 U CN 206740283U
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Abstract
The utility model discloses a kind of pressure sensitive layer and, piezoresistive pressure sensor and pressure drag type pressure sensor array, the pressure sensitive layer include grapheme material and polymer elastomer；The grapheme material is loose porous and has micro structure array, and the polymer elastomer is coated on outside the grapheme material and penetrated into each hole of the grapheme material.The piezoresistive pressure sensor includes the first electrode plate being mutually bonded and second electrode plate and at least one layer of pressure sensitive layer being placed between the first electrode plate and the second electrode plate；Micro-structural in the micro structure array contacts with the electrode in the first electrode plate and/or the second electrode plate.Ambient pressure size can be converted into the resistance value of sensor by the piezoresistive pressure sensor of the present utility model, so as to perceive the change of ambient pressure using the change of electric signal, there is low high sensitivity, cost, high-flexibility, easy processing, is easy to array with being miniaturized.
Description
Technical field
It is more particularly to a kind of to be used for piezoresistive pressure sensor the utility model relates to pressure sensor technique field
Pressure sensitive layer, piezoresistive pressure sensor and pressure drag type pressure sensor array.
Background technology
With the implementation of development and the industry 4.0 of microcomputer and technology of Internet of things, wearable device is as Internet of Things
Net perceives the interface of life signal, and it increasingly obtains paying attention to and development, its can complete collection to all kinds of vital sign parameter signals,
Detection and analysis, and it is shown in terminal device.And be to ensure wearable device pliability, comfortableness and portability, flexible sensing
Device turns into the study hotspot of wearable device with electronic skin.Highly sensitive pliable pressure sensor can gather the breathing of life, the heart
A variety of signs such as rate, pulse, receive much concern in this research.High sensibility pressure transducer is also widely applied to move simultaneously
The fields such as dynamic terminal, motor vehicle equipment and military aerospace.
Pressure sensor can be divided into pressure resistance type, condenser type and piezoelectric type etc. according to its operation principle.Pressure drag type pressure senses
Device has high sensitivity compared to other sensors, and measurement range is big, advantages of simple structure and simple.To obtain the pressure of higher sensitivity
Resistive sensor, typically studied in terms of the structure of sensor is with material two.But at present, piezoresistive pressure sensor still has
Some shortcomings, such as sensitivity are not high, cost is higher.
Utility model content
The purpose of this utility model is to provide a kind of pressure sensitive layer for piezoresistive pressure sensor, pressure resistance type pressure
Force snesor and pressure drag type pressure sensor array, its high sensitivity, it is easily processed into type, be easy to miniaturization with array, cost
It is low.
The purpose of this utility model is achieved through the following technical solutions：
A kind of pressure sensitive layer for piezoresistive pressure sensor, including grapheme material and polymer elastomer；Institute
State that grapheme material is loose porous and has micro structure array, the polymer elastomer is coated on the grapheme material
In outer and the infiltration grapheme material each hole.
Preferably, the micro-structural in the micro structure array be taper, it is truncated cone-shaped and at least one of spherical.
Preferably, when the micro-structural is taper or is truncated cone-shaped, range of taper is between 30 °~90 °.
Preferably, the porosity in the hole is 25%-65%.
Preferably, the thickness of the pressure sensitive layer is 5-200 μm.
Preferably, the grapheme material is induced with laser graphene.
Preferably, the polymer elastomer is PDMS, TPU, PET, silicon rubber or polyurethane rubber.
A kind of piezoresistive pressure sensor, including the pressure described in first electrode plate, second electrode plate and at least one layer
Sensitive layer；The presser sensor is placed between the first electrode plate and the second electrode plate, in the first electrode plate
Each electrode and/or the second electrode plate in each electrode and the micro structure array at least one micro- knot
Structure is contacted, and the first electrode plate, the pressure sensitive layer and the second electrode plate are mutually bonded.
Preferably, the piezoresistive pressure sensor is flexible.
A kind of pressure drag type pressure sensor array including described piezoresistive pressure sensor.
The beneficial effects of the utility model include：Micro-structural in pressure sensitive layer is sensitive to faint pressure change, and stone
Black alkene it is loose porous also extremely sensitive to pressure, both collective effects increase the sensitivity of piezoresistive pressure sensor, have
For body, the piezoresistive pressure sensor that is formed by pressure sensitive layer of the present utility model, when ambient pressure acts on battery lead plate,
The resistance for producing the pressure sensitive layer of deformation can be caused to produce change, i.e., micro-structural is deformed, while dredging inside graphene
Loose loose structure also can compression, this causes the resistance change of integral pressure sensitive layer, then first electrode plate and
Two battery lead plates are converted into current signal by applying voltage, by this resistance value, so as to perceive ambient pressure size.This practicality is new
Ambient pressure can be converted into electric signal and perceive ambient pressure with this by the pressure sensor of type, have high sensitivity, pliability
Well, it is easy to miniaturization, array and low cost and other advantages.
Brief description of the drawings
Fig. 1 is the structural blast schematic diagram of the piezoresistive pressure sensor in the utility model embodiment 1；
Fig. 2 is the diagrammatic cross-section of the piezoresistive pressure sensor in the utility model embodiment 1；
Fig. 3 A are the dimensional structure diagrams of the graphene formed in embodiment 1；
Fig. 3 B are the enlarged diagram of a micro-structural in Fig. 3 A；
Fig. 3 C are the scanning electron microscope (SEM) photograph of the grapheme material in Fig. 3 A；
Fig. 4 is the diagrammatic cross-section of the pressure sensitive layer formed in the utility model embodiment 1；
Fig. 5 is the schematic flow sheet of the making piezoresistive pressure sensor of the utility model embodiment 1；
Fig. 6 is the schematic flow sheet of the making piezoresistive pressure sensor of the utility model embodiment 2.
Embodiment
Embodiment of the present utility model is elaborated below in conjunction with accompanying drawing.It is emphasized that the description below is only
It is exemplary, rather than in order to limit the scope of the utility model and its application.
The utility model provides a kind of pressure sensitive layer for piezoresistive pressure sensor, in a specific embodiment,
The pressure sensitive layer includes grapheme material and polymer elastomer；The grapheme material is loose porous and with micro-
Array of structures, the polymer elastomer are coated on outside the grapheme material and penetrate into each hole of the grapheme material
In.Wherein, overall by grapheme material (including the micro-structural formed) is all loose porous.
In some preferred embodiments, micro-structural in micro structure array is taper, it is truncated cone-shaped and spherical in extremely
Few one kind.Such as：Shape can be pyrometric cone, polygon pyramid, circular cone, terrace with edge, round platform etc., when micro-structural is taper or truncation
During taper, range of taper is between 30 °~90 °.The shape of micro-structural can be a kind of or a variety of, certainly, in order to just
Processed in convenient, the shape of the preferably micro-structural in micro structure array is a kind of.
In other preferred embodiments, the porosity in hole is 25%-65%.The thickness of the pressure sensitive layer is 5-
200 μm, preferred thickness is 10-50 μm.The polymer elastomer is PDMS, TPU, PET, silicon rubber or polyurethane rubber
Glue, preferably PDMS.Preferably, the grapheme material is induced with laser graphene, specifically, can be with polyimides (PI)
Or PEI (PEI) is raw material, graphene is formed by laser sintered method.First made by the wet-etching technology of silicon
Make microstructural mold, graphene is then formed by laser sintered polyimides (PI) or PEI (PEI), finally poured into a mould
Or other techniques add polymer elastomer, polymer elastomer is penetrated into each hole of graphene, and is coated on stone after solidifying
The outside of black alkene, to form pressure sensitive layer.Pressure sensitive layer can be dimensioned to different size according to microstructural mold, make
Obtain the piezoresistive pressure sensor further formed and easily realize miniaturization and array, and the micro-structural of graphene has preferably
Uniformity, ensure that the accuracy of sensor measurement；In addition the porous graphene that is put into is by polyimides or polyetherimide
Amine sintering forms, and greatly reduces production cost.Specific preparation process, lower section are described in detail again.
The utility model also provides a kind of piezoresistive pressure sensor, including first electrode plate, second electrode plate and extremely
Pressure sensitive layer in few one layer of any of the above-described embodiment；Presser sensor is placed on the first electrode plate and second electricity
Between pole plate, sandwich structure is formed, in each electrode and/or the second electrode plate in the first electrode plate
Each electrode and at least one microstructured contact in the micro structure array, the first electrode plate, the presser sensor
Layer and the second electrode plate are mutually bonded.
In a preferred embodiment, the micro-structural of pressure sensitive layer can be any of above-mentioned microstructure aspects or
It is combined, and pressure sensitive layer can be one layer or multilayer (preferably two layers).When being one layer, i.e., in pressure sensitive layer
One side on there is micro structure array, at least one micro-structural of the micro structure array can connect with the electrode in first electrode plate
Touch, or can also be contacted with the electrode in second electrode plate；When preferably two layers, the back-to-back patch of two layers of pressure sensitive layer
Close, to cause at least one micro-structural in wherein one layer of micro structure array to be contacted with the electrode of first electrode plate, another layer
Micro structure array at least one micro-structural contacted with the electrode of second electrode plate.
In a preferred embodiment, piezoresistive pressure sensor is flexible.
The utility model also provides a kind of pressure drag type pressure sensor array including some piezoresistive pressure sensors.
Below by way of specific example, the utility model is elaborated.
Embodiment 1
As depicted in figs. 1 and 2, piezoresistive pressure sensor includes first electrode plate 1, second electrode plate 2 and is clipped in both
Middle pressure sensitive layer 3, pressure sensitive layer have one layer, at least one micro-structural 31 and first electrode in its micro structure array
The electrode contact of plate 1, first electrode plate 1, pressure sensitive layer 3 and second electrode plate 2 are mutually bonded.Wherein, first electrode plate 1 wraps
The first substrate film 11 and first electrode 12 are included, second electrode plate 2 includes the second substrate film 21 and second electrode 22, the first electricity
Pole 12 and second electrode 22, which can use, has effigurate ITO (tin indium oxide), nano silver wire.The conductive films such as graphene
Material, the first substrate film 11 and the second substrate film 21 can use the polymeric materials such as PET, PMMA.
In this example, made from the thick ITO conductive films of 200nm as electrode material, the PET of 50 μ m-thicks as substrate
First electrode plate 1 and second electrode plate 2, obtained graphically (such as with chloroazotic acid) by standard photolithography process and wet-etching technology
Battery lead plate film, to draw electric signal.
As shown in figure 5, the manufacturing process of the piezoresistive pressure sensor is as follows：
S1, using the wet-etching technology of silicon (potassium hydroxide solution can be such as used, matches and is：KOH：70g, H2O:
190mL, isopropanol (IPA)：40mL；Magnetic agitation under 80 DEG C of water-baths) production room is away from 30 μm, the micro-structural that 15 μm of microstructure height
Silicon mould and silanization treatment surface (1H being used in this example, 1H, 2H, 2H- perfluoro decyl trichlorosilanes, 3h is handled at 120 DEG C),
To obtain hydrophobic surface.
S2, coating liquid polyimides are molded on microstructural mold using 400 DEG C of hot settings；
S3, the laser 6 using 5.5W power, according to row scanning with 150mm/s speed sintered microstructure region, make its turn
Become loose porous induced with laser graphene.As shown in fig.3 a 3 c, Fig. 3 A are the graphene-structured to be formed, wherein micro-structural
31 be triangular pyramidal, and taper is 70.6 °, and Fig. 3 B are the enlarged diagram of one of micro-structural；Fig. 3 C are the grapheme material
Scanning electron microscope (SEM) photograph.
(PDMS is with consolidating in this example by S4, vacuum pouring PDMS (polydimethylsiloxane, dimethyl silicone polymer)
The quality proportioning 10 of agent:1, vacuum -0.1MPa), and 3h is toasted under 80 DEG C of environment, to form pressure sensitive layer；Fig. 4 is
The diagrammatic cross-section of pressure sensitive layer, the thickness t3 of spacing t1 and microstructure height t2 and pressure sensitive layer between its array depend on
In the detection range and testing requirements of pressure sensor, in this example, t1 is 30 μm, and t2 is 15 μm, and t3 is 25 μm.
S5, ozone activation processing is carried out to the face to be bonded of second electrode plate and pressure sensitive layer (at oxygen plasma surface
Reason, 90W, 30s)；
S6, peeled off after second electrode plate 2 is bonded with pressure sensitive layer 3 from silicon mould；
S7, first electrode plate is made into same ozone activation handled, and by between first electrode plate and second electrode plate, the
It is bonded between one battery lead plate and pressure sensitive layer, forms pressure resistance type piezo-resistance.
Embodiment 2
From patterned nano silver wire film as first electrode and second electrode in this example, to draw electric signal,
The main distinction of the embodiment and embodiment 1 is, two layers of pressure sensitive layer.As shown in fig. 6, the piezoresistive pressure sensor
Manufacturing process it is as follows：
S1, using the wet-etching technology of silicon (potassium hydroxide solution can be used, matches and is：KOH：70g, H2O:
190mL, isopropanol (IPA)：40mL；Magnetic agitation under 80 DEG C of water-baths) production room is away from 50 μm, the micro-structural that 20 μm of microstructure height
Silicon mould and silanization treatment surface (1H being used in this example, 1H, 2H, 2H- perfluoro decyl trichlorosilanes, 3h is handled at 120 DEG C),
To obtain hydrophobic surface；
S2, coating liquid polyimides are molded on micro-structural silicon mould using 400 DEG C of hot settings；
S3, the laser 6 using 5.5W power, according to row scanning with 150mm/s speed sintered microstructure region, make its turn
Become loose porous induced with laser graphene.
S4, vacuum pouring PDMS (quality proportionings 5 of PDMS and curing agent in this example:1, vacuum -0.1MPa), and
3h is toasted under 80 DEG C of environment, to form pressure sensitive layer；In this example, the thickness of pressure sensitive layer is 40 μm.
S5, two layers pressure sensitive layer carry out to ozone activation processing (oxygen plasma is surface-treated, 90W, 30s), and back to
Back of the body bonding (80 DEG C of baking oven, 3h), and peeled off from silicon mould；
S6, using above-mentioned ozone activation handling process, by above-mentioned two layers of pressure sensitive layer 4 and 5, first electrode plate and
The alignment bonding of two battery lead plates, completes sensor production.
In some other embodiment, as different from Example 2, the micro-structural on two layers of pressure sensitive layer can phase
Together, can also be different, such as the micro-structural contacted with first electrode plate can be triangular pyramidal, be contacted with second electrode plate micro-
Structure can be cone etc..
Above content is to combine specific preferred embodiment further detailed description of the utility model, it is impossible to
Assert that specific implementation of the present utility model is confined to these explanations.For the utility model person of ordinary skill in the field
For, without departing from the concept of the premise utility, some equivalent substitutes or obvious modification, and performance can also be made
Or purposes is identical, the scope of protection of the utility model should be all considered as belonging to.
Claims (10)
1. a kind of pressure sensitive layer for piezoresistive pressure sensor, it is characterised in that the pressure sensitive layer includes graphite
Alkene material and polymer elastomer；The grapheme material is loose porous and has micro structure array, a polymer bullet
Property body to be coated on the grapheme material outer and penetrate into each hole of the grapheme material.
2. pressure sensitive layer as claimed in claim 1, it is characterised in that micro-structural in the micro structure array is taper,
It is at least one of truncated cone-shaped and spherical.
3. pressure sensitive layer as claimed in claim 2, it is characterised in that when the micro-structural is taper or is truncated cone-shaped,
Range of taper is between 30 °~90 °.
4. pressure sensitive layer as claimed in claim 1 or 2, it is characterised in that the porosity in the hole is 25%-65%.
5. pressure sensitive layer as claimed in claim 1 or 2, it is characterised in that the thickness of the pressure sensitive layer is 5-200 μ
m。
6. pressure sensitive layer as claimed in claim 1 or 2, it is characterised in that the grapheme material is induced with laser graphite
Alkene.
7. pressure sensitive layer as claimed in claim 1 or 2, it is characterised in that the polymer elastomer be PDMS, TPU,
PET, silicon rubber or polyurethane rubber.
8. a kind of piezoresistive pressure sensor, it is characterised in that including first electrode plate, second electrode plate and at least one layer of power
Profit requires the pressure sensitive layer described in any one of 1-7；The presser sensor is placed on the first electrode plate and second electricity
Between pole plate, each electrode in each electrode and/or the second electrode plate in the first electrode plate with it is described
At least one microstructured contact in micro structure array, the first electrode plate, the pressure sensitive layer and the second electrode
Plate is mutually bonded.
9. piezoresistive pressure sensor as claimed in claim 8, it is characterised in that the piezoresistive pressure sensor is flexible
's.
A kind of 10. pressure drag type pressure sensor array for including any described piezoresistive pressure sensors of some claim 8-9.
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| CN106932128A (en) * | 2017-04-21 | 2017-07-07 | 清华大学深圳研究生院 | For the pressure sensitive layer and piezoresistive pressure sensor of piezoresistive pressure sensor |
| CN110044523A (en) * | 2019-05-27 | 2019-07-23 | 清华大学深圳研究生院 | A kind of texture recognition array of pressure sensors and preparation method thereof |
| CN110089801A (en) * | 2019-05-24 | 2019-08-06 | 湖南云亭烯新材料科技有限公司 | A kind of pressure-sensitive heating shoes of graphene |
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| CN110907087A (en) * | 2018-09-18 | 2020-03-24 | 中国科学技术大学 | Pressure sensor and preparation method thereof |
| CN111855742A (en) * | 2019-12-16 | 2020-10-30 | 西安交通大学 | Electronic skin structure for detecting damage degree of explosion to human body and detection method |
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| CN113624369A (en) * | 2021-06-24 | 2021-11-09 | 中国矿业大学(北京) | Pressure measurement method based on graphene sensor |
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| CN106932128A (en) * | 2017-04-21 | 2017-07-07 | 清华大学深圳研究生院 | For the pressure sensitive layer and piezoresistive pressure sensor of piezoresistive pressure sensor |
| CN110907087A (en) * | 2018-09-18 | 2020-03-24 | 中国科学技术大学 | Pressure sensor and preparation method thereof |
| CN110907087B (en) * | 2018-09-18 | 2021-08-13 | 中国科学技术大学 | Pressure sensor and preparation method thereof |
| CN110089801B (en) * | 2019-05-24 | 2021-07-02 | 湖南云亭烯新材料科技有限公司 | Graphite alkene pressure-sensitive shoes that generate heat |
| CN110089801A (en) * | 2019-05-24 | 2019-08-06 | 湖南云亭烯新材料科技有限公司 | A kind of pressure-sensitive heating shoes of graphene |
| CN110044523A (en) * | 2019-05-27 | 2019-07-23 | 清华大学深圳研究生院 | A kind of texture recognition array of pressure sensors and preparation method thereof |
| CN110246880A (en) * | 2019-06-14 | 2019-09-17 | 武汉华星光电半导体显示技术有限公司 | The preparation method and display panel of display panel |
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| CN110243396A (en) * | 2019-06-24 | 2019-09-17 | 广州市香港科大***研究院 | Bimodulus sensing unit and dual mode transducer |
| CN110296755A (en) * | 2019-06-28 | 2019-10-01 | 东华大学 | A kind of flexible sonic transducer of acoustic-electric high conversion efficiency |
| CN110608825B (en) * | 2019-09-12 | 2021-08-20 | 复旦大学 | Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof |
| CN110608825A (en) * | 2019-09-12 | 2019-12-24 | 复旦大学 | Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof |
| WO2021068273A1 (en) * | 2019-10-10 | 2021-04-15 | 山东科技大学 | Method for manufacturing capacitive strain sensor using sandpaper surface microstructure as template |
| CN110849508B (en) * | 2019-11-29 | 2021-12-24 | 上海交通大学 | Flexible pressure sensor based on discrete contact structure and preparation method thereof |
| CN110849508A (en) * | 2019-11-29 | 2020-02-28 | 上海交通大学 | Flexible pressure sensor based on discrete contact structure and preparation method thereof |
| CN111855742A (en) * | 2019-12-16 | 2020-10-30 | 西安交通大学 | Electronic skin structure for detecting damage degree of explosion to human body and detection method |
| CN111855742B (en) * | 2019-12-16 | 2021-11-19 | 西安交通大学 | Electronic skin structure for detecting damage degree of explosion to human body and detection method |
| CN112429700A (en) * | 2020-10-26 | 2021-03-02 | 北京机械设备研究所 | Preparation method of flexible pressure sensor with pressure-sensitive structure |
| CN112378554A (en) * | 2020-10-26 | 2021-02-19 | 北京机械设备研究所 | Flexible pressure sensor with pressure sensitive structure |
| CN113218539A (en) * | 2021-04-22 | 2021-08-06 | 清华大学深圳国际研究生院 | Microstructure, flexible pressure sensor and preparation method thereof |
| CN113237579A (en) * | 2021-05-06 | 2021-08-10 | 南京邮电大学 | Flexible pressure sensor based on graphene array and preparation method thereof |
| CN113237579B (en) * | 2021-05-06 | 2022-10-14 | 南京邮电大学 | Flexible pressure sensor based on graphene array and preparation method thereof |
| CN113624369A (en) * | 2021-06-24 | 2021-11-09 | 中国矿业大学(北京) | Pressure measurement method based on graphene sensor |
| CN113624369B (en) * | 2021-06-24 | 2022-04-29 | 中国矿业大学(北京) | Pressure measurement method based on graphene sensor |
| CN114608729A (en) * | 2022-03-07 | 2022-06-10 | 杭州电子科技大学 | Array type piezoresistive sensor flexible integrated electronic system and preparation method thereof |
| CN115144105A (en) * | 2022-06-09 | 2022-10-04 | 华南理工大学 | Flexible pressure sensor and preparation method thereof |
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