CN106932128A - For the pressure sensitive layer and piezoresistive pressure sensor of piezoresistive pressure sensor - Google Patents
For the pressure sensitive layer and piezoresistive pressure sensor of piezoresistive pressure sensor Download PDFInfo
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- CN106932128A CN106932128A CN201710265632.4A CN201710265632A CN106932128A CN 106932128 A CN106932128 A CN 106932128A CN 201710265632 A CN201710265632 A CN 201710265632A CN 106932128 A CN106932128 A CN 106932128A
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- 229920000642 polymer Polymers 0.000 claims abstract description 13
- 229920001971 elastomer Polymers 0.000 claims abstract description 12
- 239000000806 elastomer Substances 0.000 claims abstract description 12
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000004433 Thermoplastic polyurethane Substances 0.000 claims description 3
- -1 graphite Alkene Chemical class 0.000 claims description 3
- 229920003225 polyurethane elastomer Polymers 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
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- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 230000008859 change Effects 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 229910021389 graphene Inorganic materials 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
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- 229920001721 polyimide Polymers 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004697 Polyetherimide Substances 0.000 description 5
- 229920001601 polyetherimide Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
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- 230000004913 activation Effects 0.000 description 4
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- 238000001514 detection method Methods 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002444 silanisation Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- VIFIHLXNOOCGLJ-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl VIFIHLXNOOCGLJ-UHFFFAOYSA-N 0.000 description 2
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- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
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- 229920005573 silicon-containing polymer Polymers 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
Abstract
The invention discloses a kind of pressure sensitive layer and piezoresistive pressure sensor for piezoresistive pressure sensor, the pressure sensitive layer includes grapheme material and polymer elastomer；The grapheme material is loose porous and with micro structure array, and the polymer elastomer is coated on outside the grapheme material and penetrates into each hole of the grapheme material.The piezoresistive pressure sensor includes the pressure sensitive layer that the first electrode plate being mutually bonded and second electrode plate and at least one of which are placed between the first electrode plate and the second electrode plate；Electrode contact in micro-structural in the micro structure array and the first electrode plate and/or the second electrode plate.Ambient pressure size can be converted into the piezoresistive pressure sensor of the invention the resistance value of sensor, so as to perceive the change of ambient pressure using the change of electric signal, there is sensitivity high, low cost, high-flexibility, easy processing, be easy to array with miniaturization.
Description
Technical field
The present invention relates to pressure sensor technique field, more particularly to a kind of pressure for piezoresistive pressure sensor
Power sensitive layer and piezoresistive pressure sensor.
Background technology
With the implementation of development and the industry 4.0 of microcomputer and technology of Internet of things, wearable device is used as Internet of Things
Net perceives the interface of life signal, its increasingly obtain paying attention to development, its can complete collection to all kinds of vital sign parameter signals,
Detection and analysis, and it is displayed in terminal device.And be to ensure wearable device pliability, comfortableness and portability, flexible sensing
Device turns into the study hotspot of wearable device with electronic skin.Highly sensitive pliable pressure sensor can gather the breathing of life, the heart
Various signs such as rate, pulse, receive much concern in studying herein.High sensibility pressure transducer is also widely applied to move simultaneously
The fields such as dynamic terminal, motor vehicle equipment and military aerospace.
Pressure sensor can be divided into pressure resistance type, condenser type and piezoelectric type etc. according to its operation principle.Pressure drag type pressure is sensed
Device has sensitivity high compared to other sensors, and measurement range is big, advantages of simple structure and simple.To obtain the pressure of higher sensitivity
Resistive sensor, typically studies in terms of the structure and material two of sensor.But at present, piezoresistive pressure sensor is still present
Some shortcomings, such as sensitivity are not high, relatively costly.
The content of the invention
It is an object of the invention to provide a kind of pressure sensitive layer and pressure drag type pressure for piezoresistive pressure sensor
Sensor, its sensitivity is high, easily processed into type, be easy to miniaturization and array, low cost.
The purpose of the present invention is achieved through the following technical solutions：
A kind of pressure sensitive layer for piezoresistive pressure sensor, it is characterised in that the pressure sensitive layer includes stone
Black alkene material and polymer elastomer；The grapheme material is loose porous and with micro structure array, the polymer
Elastomer is coated on outside the grapheme material and penetrates into each hole of the grapheme material.
Preferably, the micro-structural in the micro structure array be taper, it is truncated cone-shaped and spherical at least one.
Preferably, when the micro-structural be taper or it is truncated cone-shaped when, range of taper is between 30 °~90 °.
Preferably, the porosity in the hole is 25%-65%.
Preferably, the thickness of the pressure sensitive layer is 5-200 μm.
Preferably, the grapheme material is induced with laser Graphene.
Preferably, the polymer elastomer is PDMS, TPU, PET, silicon rubber or polyurethane rubber.
A kind of piezoresistive pressure sensor, including the pressure described in first electrode plate, second electrode plate and at least one of which
Sensitive layer；The presser sensor is placed between the first electrode plate and the second electrode plate, in the first electrode plate
Each electrode and/or the second electrode plate in each electrode and the micro- knot of at least one of the micro structure array
Structure is contacted, and the first electrode plate, the pressure sensitive layer and the second electrode plate are mutually bonded.
Preferably, the piezoresistive pressure sensor is flexible.
A kind of pressure drag type pressure sensor array including described piezoresistive pressure sensor.
Beneficial effects of the present invention include：Micro-structural in pressure sensitive layer is sensitive to faint pressure change, and Graphene
It is loose porous also extremely sensitive to pressure, both collective effects increase the sensitivity of piezoresistive pressure sensor, it is specific come
Say, the piezoresistive pressure sensor formed by pressure sensitive layer of the present invention, when ambient pressure acts on battery lead plate, can cause to produce
The resistance of the pressure sensitive layer of deformation produces change, i.e., micro-structural is deformed, while the loose and porous structure inside Graphene
Also can compression, this causes the resistance change of integral pressure sensitive layer, and then first electrode plate and second electrode plate are logical
Applied voltage is crossed, this resistance value is converted into current signal, so as to ambient pressure size can be perceived.Pressure sensor of the invention
Ambient pressure can be converted into electric signal and ambient pressure is perceived with this, with sensitivity it is high, pliability is good, be easy to miniaturization,
Array and low cost and other advantages.
Brief description of the drawings
Fig. 1 is the structural blast schematic diagram of the piezoresistive pressure sensor in the embodiment of the present invention 1；
Fig. 2 is the generalized section of the piezoresistive pressure sensor in the embodiment of the present invention 1；
Fig. 3 A are the dimensional structure diagrams of the Graphene of formation in embodiment 1；
Fig. 3 B are an enlarged diagram for micro-structural in Fig. 3 A；
Fig. 3 C are the scanning electron microscope (SEM) photograph of the grapheme material in Fig. 3 A；
Fig. 4 is the generalized section of the pressure sensitive layer of formation in the embodiment of the present invention 1；
Fig. 5 is the schematic flow sheet of the making piezoresistive pressure sensor of the embodiment of the present invention 1；
Fig. 6 is the schematic flow sheet of the making piezoresistive pressure sensor of the embodiment of the present invention 2.
Specific embodiment
Embodiments of the invention are elaborated below in conjunction with accompanying drawing.It is emphasized that the description below is only to show
Example property, rather than in order to limit the scope of the present invention and its application.
The present invention provides a kind of pressure sensitive layer for piezoresistive pressure sensor, in a specific embodiment, described
Pressure sensitive layer includes grapheme material and polymer elastomer；The grapheme material is loose porous and with micro-structural
Array, the polymer elastomer is coated on outside the grapheme material and penetrates into each hole of the grapheme material.Its
In, overall by grapheme material (including the micro-structural for being formed) is all loose porous.
In some preferred embodiments, micro-structural in micro structure array is taper, it is truncated cone-shaped and spherical in extremely
Few one kind.For example：Shape can be pyrometric cone, polygon pyramid, circular cone, terrace with edge, round platform etc., when micro-structural is taper or truncation
During taper, range of taper is between 30 °~90 °.The shape of micro-structural can be a kind of, or various, certainly, in order to just
Processed in convenient, the shape of the preferably micro-structural in micro structure array is a kind of.
In other preferred embodiments, the porosity in hole is 25%-65%.The thickness of the pressure sensitive layer is 5-
200 μm, preferred thickness is 10-50 μm.The polymer elastomer is PDMS, TPU, PET, silicon rubber or polyurethane rubber
Glue, preferably PDMS.Preferably, the grapheme material is induced with laser Graphene, specifically, can be with polyimides (PI)
Or PEI (PEI) is raw material, and Graphene is formed by laser sintered method.First made by the wet-etching technology of silicon
Make microstructural mold, Graphene is then formed by laser sintered polyimides (PI) or PEI (PEI), finally pour into a mould
Or other techniques add polymer elastomer, polymer elastomer to penetrate into each hole of Graphene, and stone is coated on after solidification
The outside of black alkene, to form pressure sensitive layer.Pressure sensitive layer can be dimensioned to different size according to microstructural mold, make
Obtain the piezoresistive pressure sensor for further being formed and easily realize miniaturization and array, and the micro-structural of Graphene has preferably
Uniformity, it is ensured that the accuracy of sensor measurement；In addition the porous Graphene that is put into is by polyimides or polyetherimide
Amine sintering is formed, and greatly reduces production cost.Specific preparation process, lower section describes in detail again.
The present invention also provides a kind of piezoresistive pressure sensor, including first electrode plate, second electrode plate and at least one
Pressure sensitive layer in any of the above-described implementation method of layer；Presser sensor is placed on the first electrode plate and the second electrode plate
Between, sandwich structure is formed, each in each electrode and/or the second electrode plate in the first electrode plate
At least one of electrode and the micro structure array microstructured contact, the first electrode plate, the pressure sensitive layer and institute
Second electrode plate is stated to be mutually bonded.
In a preferred embodiment, the micro-structural of pressure sensitive layer can be in above-mentioned microstructure aspects any one or
Its combination, pressure sensitive layer can be one layer, or multilayer (preferably two-layer).When being one layer, i.e., in pressure sensitive layer
One side on there is micro structure array, at least one micro-structural of the micro structure array can connect with the electrode in first electrode plate
Touch, or can also be with the electrode contact in second electrode plate；When preferably two-layer, the back-to-back patch of two-layer pressure sensitive layer
Close, to cause wherein one layer of at least one of micro structure array micro-structural and the electrode contact of first electrode plate, another layer
At least one of micro structure array micro-structural and second electrode plate electrode contact.
In a preferred embodiment, piezoresistive pressure sensor is flexible.
The present invention also provides a kind of pressure drag type pressure sensor array including some piezoresistive pressure sensors.
Below by way of specific example, the present invention will be described in detail.
Embodiment 1
As depicted in figs. 1 and 2, piezoresistive pressure sensor includes first electrode plate 1, second electrode plate 2 and is clipped in both
Middle pressure sensitive layer 3, pressure sensitive layer has one layer, at least one of its micro structure array micro-structural 31 and first electrode
The electrode contact of plate 1, first electrode plate 1, pressure sensitive layer 3 and second electrode plate 2 are mutually bonded.Wherein, first electrode plate 1 is wrapped
The first substrate film 11 and first electrode 12 are included, second electrode plate 2 includes the second substrate film 21 and second electrode 22, the first electricity
Pole 12 and second electrode 22 can be using the effigurate ITO (tin indium oxide) of tool, nano silver wires.The conductive films such as Graphene
Material, the first substrate film 11 and the second substrate film 21 can be using polymeric materials such as PET, PMMA.
In this example, from 200nm thick ITO conductive films as electrode material, the PET of 50 μ m-thicks makes as substrate
First electrode plate 1 and second electrode plate 2, obtain patterned by standard photolithography process with wet-etching technology (such as using chloroazotic acid)
Battery lead plate film, to draw electric signal.
As shown in figure 5, the manufacturing process of the piezoresistive pressure sensor is as follows：
S1, (potassium hydroxide solution can be such as used, is matched and is using the wet-etching technology of silicon：KOH：70g, H2O:
190mL, isopropanol (IPA)：40mL；Magnetic agitation under 80 DEG C of water-baths) production room is away from 30 μm, the micro-structural that 15 μm of microstructure height
Silicon mould and silanization treatment surface (using 1H, 1H, 2H, 2H- perfluoro decyl trichlorosilane to process 3h at 120 DEG C in this example),
To obtain hydrophobic surface.
S2, coating liquid polyimides are molded on microstructural mold using 400 DEG C of hot settings；
S3, the laser 6 using 5.5W power, according to row scanning with the speed sintered microstructure region of 150mm/s, make its turn
Become loose porous induced with laser Graphene.As shown in fig.3 a 3 c, Fig. 3 A are the graphene-structured to be formed, wherein micro-structural
31 is triangular pyramidal, and taper is 70.6 °, and Fig. 3 B are the enlarged diagram of one of micro-structural；Fig. 3 C are the grapheme material
Scanning electron microscope (SEM) photograph.
S4, vacuum pouring PDMS (polydimethylsiloxane, dimethyl silicone polymer) (PDMS and solidifications in this example
The quality proportioning 10 of agent:1, vacuum -0.1MPa), and 3h is toasted under 80 DEG C of environment, to form pressure sensitive layer；Fig. 4 is pressure
The spacing t1 and microstructure height t2 and thickness t3 of pressure sensitive layer between the generalized section of power sensitive layer, its array is depended on
The detection range of pressure sensor requires that in this example, t1 is 30 μm, and t2 is 15 μm, and t3 is 25 μm with detection.
S5, the face to be bonded to second electrode plate and pressure sensitive layer carry out ozone activation treatment (at oxygen plasma surface
Reason, 90W, 30s)；
S6, second electrode plate 2 is bonded with pressure sensitive layer 3 after from silicon mould peel off；
S7, first electrode plate is made same ozone activation treatment, and by between first electrode plate and second electrode plate, the
It is bonded between one battery lead plate and pressure sensitive layer, is formed pressure resistance type piezo-resistance.
Embodiment 2
From patterned nano silver wire film as first electrode and second electrode in this example, to draw electric signal,
The embodiment differs primarily in that pressure sensitive layer is two-layer with embodiment 1.As shown in fig. 6, the piezoresistive pressure sensor
Manufacturing process it is as follows：
S1, (potassium hydroxide solution can be used, is matched and is using the wet-etching technology of silicon：KOH：70g, H2O:
190mL, isopropanol (IPA)：40mL；Magnetic agitation under 80 DEG C of water-baths) production room is away from 50 μm, the micro-structural that 20 μm of microstructure height
Silicon mould and silanization treatment surface (using 1H, 1H, 2H, 2H- perfluoro decyl trichlorosilane to process 3h at 120 DEG C in this example),
To obtain hydrophobic surface；
S2, coating liquid polyimides are molded on micro-structural silicon mould using 400 DEG C of hot settings；
S3, the laser 6 using 5.5W power, according to row scanning with the speed sintered microstructure region of 150mm/s, make its turn
Become loose porous induced with laser Graphene.
S4, vacuum pouring PDMS (quality proportionings 5 of PDMS and curing agent in this example:1, vacuum -0.1MPa), and 80
3h is toasted under DEG C environment, to form pressure sensitive layer；In this example, the thickness of pressure sensitive layer is 40 μm.
S5, two-layer pressure sensitive layer is carried out ozone activation treatment (oxygen plasma be surface-treated, 90W, 30s), and back to
Back of the body bonding (80 DEG C of baking oven, 3h), and peeled off from silicon mould；
S6, using above-mentioned ozone activation handling process, by above-mentioned two-layer pressure sensitive layer 4 and 5, first electrode plate and
Two battery lead plates alignment bonding, completes sensor production.
In some other embodiment, as different from Example 2, the micro-structural on two-layer pressure sensitive layer can phase
Together, it is also possible to which different, the micro-structural for for example being contacted with first electrode plate can be triangular pyramidal, micro- with what second electrode plate was contacted
Structure can be cone etc..
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to assert
Specific implementation of the invention is confined to these explanations.For those skilled in the art, do not taking off
On the premise of present inventive concept, some equivalent substitutes or obvious modification can also be made, and performance or purposes are identical, all should
When being considered as belonging to protection scope of the present invention.
Claims (10)
1. a kind of pressure sensitive layer for piezoresistive pressure sensor, it is characterised in that the pressure sensitive layer includes graphite
Alkene material and polymer elastomer；The grapheme material is loose porous and with micro structure array, the polymer bullet
Gonosome is coated on outside the grapheme material and penetrates into each hole of the grapheme material.
2. pressure sensitive layer as claimed in claim 1, it is characterised in that the micro-structural in the micro structure array is taper,
At least one in truncated cone-shaped and spherical.
3. pressure sensitive layer as claimed in claim 2, it is characterised in that when the micro-structural be taper or it is truncated cone-shaped when,
Range of taper is between 30 °~90 °.
4. pressure sensitive layer as claimed in claim 1 or 2, it is characterised in that the porosity in the hole is 25%-65%.
5. pressure sensitive layer as claimed in claim 1 or 2, it is characterised in that the thickness of the pressure sensitive layer is 5-200 μ
m。
6. pressure sensitive layer as claimed in claim 1 or 2, it is characterised in that the grapheme material is induced with laser graphite
Alkene.
7. pressure sensitive layer as claimed in claim 1 or 2, it is characterised in that the polymer elastomer be PDMS, TPU,
PET, silicon rubber or polyurethane rubber.
8. a kind of piezoresistive pressure sensor, it is characterised in that including first electrode plate, second electrode plate and at least one of which power
Profit requires the pressure sensitive layer described in any one of 1-7；The presser sensor is placed on the first electrode plate and second electricity
Between pole plate, each electrode in each electrode and/or the second electrode plate in the first electrode plate with it is described
At least one of micro structure array microstructured contact, the first electrode plate, the pressure sensitive layer and the second electrode
Plate is mutually bonded.
9. piezoresistive pressure sensor as claimed in claim 8, it is characterised in that the piezoresistive pressure sensor is flexible
's.
10. a kind of pressure drag type pressure sensor array including any described piezoresistive pressure sensors of some claim 8-9.
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| CN201710265632.4A CN106932128A (en) | 2017-04-21 | 2017-04-21 | For the pressure sensitive layer and piezoresistive pressure sensor of piezoresistive pressure sensor |
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| CN201710265632.4A CN106932128A (en) | 2017-04-21 | 2017-04-21 | For the pressure sensitive layer and piezoresistive pressure sensor of piezoresistive pressure sensor |
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| CN107782475A (en) * | 2017-10-24 | 2018-03-09 | 北京石墨烯研究院 | Resistive pressure sensor and preparation method |
| CN107907251A (en) * | 2017-10-27 | 2018-04-13 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
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| CN109533000A (en) * | 2018-12-14 | 2019-03-29 | 吉林大学 | A kind of intelligent human-machine interaction steering wheel arrangement and methods for using them with tactilely-perceptible |
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