CN112378554A - Flexible pressure sensor with pressure sensitive structure - Google Patents
Flexible pressure sensor with pressure sensitive structure Download PDFInfo
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- CN112378554A CN112378554A CN202011158266.0A CN202011158266A CN112378554A CN 112378554 A CN112378554 A CN 112378554A CN 202011158266 A CN202011158266 A CN 202011158266A CN 112378554 A CN112378554 A CN 112378554A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
Abstract
The invention discloses a flexible pressure sensor with a pressure-sensitive structure, which consists of an upper electrode, a lower electrode and a flexible pressure-sensitive structure positioned between the upper electrode and the lower electrode; the flexible pressure sensitive structure includes at least one pressure sensitive sparse layer. On the basis of the flexible sensor, the invention changes the composition mode of the pressure-sensitive structure, changes the main composition of the pressure-sensitive material in the pressure-sensitive structure and the mode of sputtering the metal layer on the outer surface of the pressure-sensitive structure, obtains the pressure-sensitive sensor structure, has greatly improved performance compared with the traditional piezoresistive pressure sensor, improves the sensitivity by more than 2 times, has good flexibility and larger deformation, can be used in a complex environment without influencing the detection performance, and is one of the optimal choices for improving the sensitivity and the flexibility of the pressure sensor.
Description
Technical Field
The invention belongs to the technical field of pressure sensors, and particularly relates to a flexible pressure sensor with a pressure-sensitive structure.
Background
In recent years, a piezoresistive pressure sensor is a sensor which is manufactured by using a piezoresistive effect of a semiconductor material, and the piezoresistive effect is a phenomenon in which a band structure or a conductive network of a sensing material, such as a semiconductor, a metal, or a composite material, is changed under the influence of an external stress (bending, compression, tension, etc.), and the resistivity of the sensing material is changed, so that the pressure can be measured by the change in the resistivity.
The traditional rigid sensor is based on a silicon-based material and a silicon-based structure, has the characteristics of small size, high sensitivity and the like, but the sensor is hard and inflexible, so that the deformation is small, the measuring range is small, the temperature influence is large and the like, and for the sensor, the sensitivity and the linearity are required to be further improved.
Along with the development of the intelligent information era, people have more and more requirements on intelligent terminals, compared with the traditional rigid sensor, the flexible pressure sensor has the characteristics of small rigidity, large deformation and the like, and can be applied to various complex working environments, and the performance requirements of various industries on the flexible intelligent pressure sensor are increased day by day. The flexible pressure sensor is integrated on wearable electronic equipment or directly pasted on the surface of a human body as electronic skin, so that the motion posture of the human body can be effectively measured, and the functions of remote medical diagnosis, health monitoring, fall prevention alarm and the like can be realized in the future by combining the functions of remote information transmission and timely communication. Therefore, the development of the flexible piezoresistive pressure sensor with good flexibility, high sensitivity and good responsiveness has important significance.
Disclosure of Invention
The invention aims to provide a flexible pressure sensor with a pressure-sensitive structure, and solves the problems of poor uniformity and consistency and low precision of the existing MEMS pressure sensor.
In order to achieve the above object, according to one aspect of the present invention, there is provided a flexible pressure sensor having a pressure-sensitive structure, which is composed of an upper electrode, a lower electrode, and a flexible pressure-sensitive structure therebetween; the flexible pressure sensitive structure includes at least one pressure sensitive sparse layer.
According to the invention, the shape of the pressure-sensitive sparse layer satisfies the condition that the contact area deformation and the applied pressure change curve are in a nonlinear relation. Preferably, the pressure-sensitive sparse layer has a shape of a plurality of rectangles, cylinders, triangles, trapezoids, rhombuses, hexagons or pentagons arranged side by side.
According to the invention, the flexible pressure-sensitive structure further comprises at least one pressure-sensitive compact layer, and the pressure-sensitive compact layer is a pressure-sensitive material with linear superposition contact area deformation and applied pressure change curves.
According to the invention, the pressure-sensitive dense layer is in contact with the upper electrode, and the pressure-sensitive sparse layer is in contact with the lower electrode.
According to the invention, the pressure-sensitive sparse layer is of a plurality of triangular structures arranged side by side, the bottom edges of the triangles are in close contact with the pressure-sensitive dense layer, the pressure-sensitive dense layer is in contact with the upper electrode, and the pressure-sensitive sparse layer is in contact with the lower electrode.
According to the invention, the pressure-sensitive sparse layer is of a plurality of triangular structures arranged side by side, the bottom edges of the triangles are in close contact with the lower electrode, the top points of the triangles are in contact with one end of the pressure-sensitive dense layer, and the other end of the pressure-sensitive dense layer is in contact with the upper electrode.
According to the invention, the flexible pressure-sensitive structure is composed of at least one pressure-sensitive compact layer in the middle and at least one pressure-sensitive sparse layer on the upper and lower sides respectively. Preferably, the pressure-sensitive sparse layer is a plurality of triangular structures arranged side by side, the triangular vertex of the pressure-sensitive sparse layer positioned on the upper side is in contact with the upper electrode, and the triangular base of the pressure-sensitive sparse layer positioned on the lower side is in close contact with the lower electrode.
According to the invention, the flexible pressure-sensitive structure comprises at least one pressure-sensitive compact layer which is respectively contacted with the upper electrode and the lower electrode, and at least two pressure-sensitive sparse layers are arranged between the two pressure-sensitive compact layers. Preferably, the pressure-sensitive sparse layer is formed by a plurality of side-by-side triangular structures, and the apexes of the triangles are oppositely arranged and in contact. Preferably, the pressure-sensitive sparse layer is formed by a plurality of parallel isosceles trapezoid structures, and the upper bases of the isosceles trapezoids are oppositely arranged and contacted.
According to the invention, the flexible pressure-sensitive structure comprises an upper layer of trapezoidal structure and a lower layer of trapezoidal structure which are arranged in parallel, and the upper bottom edges of the upper layer of trapezoidal structure and the lower layer of trapezoidal structure are oppositely arranged in a contact manner to form a pressure-sensitive sparse layer.
According to the invention, a metallic conductive layer is formed between the surface of the flexible pressure sensitive structure and the flexible pressure sensitive structure.
The invention has the beneficial effects that:
1) the groove structure is formed by a masking layer corrosion method, and a high-precision structural mold is formed by utilizing a photoetching process; the surface is hydrophobized by surface silanization or hydrophobic material treatment, so that the consistency of the structure is increased; plating a conductive layer on the surface of the sensor to increase the stability of the sensor and reduce the contact resistance; through the lamination of multiple structures, realize the sensor of different range and different sensitivity.
2) On the basis of a flexible sensor, the invention changes the composition mode of the pressure-sensitive structure, changes the main composition components of the pressure-sensitive material in the pressure-sensitive structure and the mode of sputtering a metal layer on the outer surface of the pressure-sensitive structure, and obtains the pressure-sensitive sensor structure. Compared with the traditional piezoresistive pressure sensor, the performance of the sensor system is greatly improved, the sensitivity is improved by more than 2 times, and the sensor system has good flexibility and large deformation, can be used in a complex environment without influencing the detection performance, and is one of the optimal choices for improving the sensitivity and the flexibility of the pressure sensor.
Drawings
Fig. 1 is a schematic diagram of a simple structure of a pressure-sensitive sensor in the related art.
Fig. 2 shows a different pressure sensitive block diagram of the flexible pressure sensor of the present invention.
Fig. 3 shows a pressure sensitive dense structure detection schematic of the flexible pressure sensor of the present invention.
FIG. 4 shows a block diagram of a sputtered metal layer on the surface of a pressure sensitive structure of the flexible pressure sensor of the present invention.
Fig. 5 shows a process flow diagram for the preparation of the flexible pressure sensor of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and embodiments. It should be emphasized that the specific embodiments described herein are merely illustrative of the invention, are some, not all, and therefore do not limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
In order to further improve the deformation caused by applying unit pressure under the same pressure-sensitive material and improve the sensitivity of the whole piezoresistive pressure sensor system, particularly the detection sensitivity to weak force, the invention provides a flexible pressure sensor with a pressure-sensitive structure, which mainly aims at the problems that the existing piezoresistive sensor is high in rigidity, poor in sensitivity, incapable of using a complex application environment and the like.
With general reference to fig. 1 to 4, the pressure sensitive structure flexible pressure sensor is composed of an upper electrode 10, a lower electrode 20 and a flexible pressure sensitive structure therebetween, wherein the flexible pressure sensitive structure includes at least one pressure sensitive sparse layer 30. The pressure-sensitive sparse layer 30 is enabled to have good flexibility and large deformation, so that the sensitivity of the pressure sensor is improved by more than 2 times, the system performance of the whole pressure sensor is improved, the pressure-sensitive sparse layer can be used in a complex environment without influencing the detection performance of the pressure sensor, and the optimal selection for improving the sensitivity and the flexibility of the pressure sensor is achieved.
According to the invention, the shape of the pressure-sensitive sparse layer 30 satisfies the nonlinear relation between the contact area deformation and the applied pressure change curve, and the shape of the pressure-sensitive sparse layer 30 is a plurality of rectangles, cylinders, triangles, trapezoids, rhombuses, hexagons or pentagons which are arranged in parallel.
According to the invention, the flexible pressure-sensitive structure further comprises at least one pressure-sensitive dense layer 40, the pressure-sensitive dense layer is in contact with the upper electrode, and the pressure-sensitive sparse layer is in contact with the lower electrode. The pressure-sensitive dense layer 40 is a pressure-sensitive material structure in which the change curve of the superposed contact area deformation and the applied pressure is linear. For example, the flexible pressure-sensitive structure can be a structure with only one pressure-sensitive sparse layer 30, or a structure with one pressure-sensitive dense layer 40 and one pressure-sensitive sparse layer 30, or a structure with two pressure-sensitive dense layers 40 and two pressure-sensitive sparse layers 30. The pressure-sensitive sparse layer 30 and the pressure-sensitive dense layer 40 may be superimposed in any structure, number of layers, and direction.
In one embodiment of the present invention, as shown in fig. 2(b), the pressure-sensitive sparse layer 30 is formed of a plurality of triangular structures arranged side by side, and the base of the triangle is in close contact with the pressure-sensitive dense layer 40.
As shown in fig. 2(c), the pressure-sensitive sparse layer 30 is formed of a plurality of juxtaposed triangular structures, and the base of the triangle is in close contact with the lower electrode, the apex of the triangle is in contact with the pressure-sensitive dense layer 40, and the pressure-sensitive dense layer 40 is in close contact with the upper electrode 10.
As shown in fig. 2(d), the flexible pressure-sensitive structure is composed of at least one pressure-sensitive dense layer 40 in the middle and at least one pressure-sensitive sparse layer 30 on the upper and lower sides of the pressure-sensitive dense layer 40, respectively. The pressure-sensitive sparse layer 30 has a plurality of parallel triangular structures, the triangular vertex of the pressure-sensitive sparse layer 30 located on the upper side is in contact with the upper electrode 10, and the triangular base of the pressure-sensitive sparse layer 30 located on the lower side is in close contact with the lower electrode 20.
As shown in fig. 2(e), the pressure-sensitive sparse layer 30 is formed by arranging a plurality of isosceles trapezoids on an upper layer and a lower layer, wherein the upper bases of the isosceles trapezoids are arranged in relatively close contact.
Preferably, the flexible pressure-sensitive structure comprises at least one pressure-sensitive dense layer 40 respectively in contact with the upper electrode 10 and the lower electrode 20, and at least two pressure-sensitive sparse layers 30 are arranged between the two pressure-sensitive dense layers 40. As shown in fig. 2(f), the pressure-sensitive sparse layer 30 is formed of a plurality of juxtaposed triangular structures with the apexes of the triangles disposed opposite and in contact.
As shown in fig. 3, under the condition that the same unit pressure is applied to the upper and lower electrodes, the pressure-sensitive dense layer 40 can rapidly generate large deformation in the place where the contact area with the upper and lower electrodes or other layers is small, so as to improve the detection sensitivity of the sensor, thereby achieving rapid detection of external load pressure, especially weak pressure, and the height difference of the deformation of the pressure-sensitive sparse layer 30 before and after the application of the load pressure can reach more than 2 mm.
As shown in fig. 4, a metallic conductive layer 50 is also provided between the surface of the flexible pressure sensitive structure and the flexible pressure sensitive structure. The introduction of the metal conductive layer 50 can reduce the contact resistance on one hand, and on the other hand, the biological contact surface of the metal conductive layer 50 changes under the action of pressure, thereby further improving the sensitivity.
In summary, the flexible pressure sensor structure of the present invention adopts the following three points to improve the sensitivity:
1) the middle flexible pressure-sensitive material is structured, the sensor deforms after being subjected to pressure, and the sensitivity of the sensor is further improved through the change of the area in the structure.
2) In order to improve the resistance change rate of the pressure-sensitive material under the action of pressure, novel flexible colloidal polymers such as PDMS (polydimethylsiloxane), silica gel, rubber and the like are adopted, and other flexible base materials such as graphene, carbon nano tubes or metal nano particles are doped to form the pressure-sensitive material.
3) In order to reduce the contact resistance between the flexible pressure-sensitive materials and the upper and lower electrodes and improve the sensitivity, a metal conducting layer is formed on the surface of the flexible pressure-sensitive structure or between the flexible pressure-sensitive structures. The introduction of the metal conducting layer can reduce the contact resistance on one hand, and on the other hand, the biological contact surface of the metal contact layer changes under the action of pressure, so that the sensitivity is further improved.
The invention also provides a preparation method of the pressure-sensitive structure flexible pressure sensor, as shown in fig. 5, the process flow comprises the following steps:
the first step is as follows: a silicon wafer substrate is prepared, and the crystal orientation of the silicon wafer is one of 100, 110 and 111.
The second step is that: and depositing an insulating medium layer or a metal layer on the surface of the silicon wafer substrate to form a masking layer. The masking layer is used to protect the sample surface when patterning the silicon wafer substrate. If the metal layer is formed, the metal layer can be deposited on the surface of the silicon wafer substrate by physical vapor deposition such as magnetron sputtering, evaporation and the like, and the metal layer can be formed by metals such as Pt, Al, Au, Ti, Cr, Ni and the like. If the masking layer is an insulating dielectric layer, the insulating dielectric layer can be deposited on the surface of the silicon wafer substrate by a thermal oxidation method and a low-pressure chemical vapor deposition method. The insulating medium layer is made of silicon nitride, silicon oxide, hafnium oxide, aluminum oxide or SU-8 photoresist material.
The third step: and patterning the insulating medium layer or the metal layer in a photoetching mode to form a pressure sensitive structure pattern. For example, a silicon nitride film may be used as a mask layer, patterned by photolithography, and dry-etched by RIE or ICP, or patterned by wet etching. The photoetching graph is a pressure sensitive structure cross section, the main structure of the photoetching graph is one or a combination of a plurality of circular shapes, rectangular shapes, oval shapes, hexagonal shapes, pentagonal shapes and rhombic shapes which are arranged in an array mode, and the size of the graph is smaller than 500 micrometers.
And fourthly, corroding and etching the silicon wafer substrate. The etching method mainly comprises three methods, namely, performing anisotropic etching on the Si wafer substrate exposed on the surface by using KOH or TMAH solution, etching the silicon wafer substrate exposed on the surface by using hydrofluoric acid aqueous solution, performing etching by using the silicon wafer substrate as a chemical electrode through an electrochemical method, and performing dry etching by using ICP or RIE. By controlling the etching rate and the lateral/longitudinal etching ratio, a tapered, cylindrical, inverted trapezoidal, or the like groove shape can be formed, as shown in fig. 5. The KOH or TMAH solution adopted by the invention has the mass percentage concentration of 0.1-30% and the hydrofluoric acid aqueous solution has the mass percentage concentration of 0.1-20%.
And fifthly, removing the mask layer on the surface by wet etching.
And sixthly, in order to improve the integrity of the pressure-sensitive structure and the consistency of the microstructure, the method further comprises the step of carrying out hydrophobic treatment on the surface of the treated silicon wafer substrate, so that the adhesion with the pressure-sensitive material is reduced in the subsequent process by reducing the surface energy. The hydrophobization treatment includes using a surface silanization treatment, or coating a hydrophobization material such as a Cytop material or a teflon material on the surface.
The seventh step: the trench structure is filled with a pressure sensitive material. And then curing at 50-150 ℃ or under ultraviolet irradiation.
Conventional pressure sensitive polymer composites typically use single crystal silicon as the conductive filler, but these materials typically exhibit low sensitivity and large hysteresis. According to the invention, the flexible substrate material and the conductive particles are mixed in a certain proportion, so that the conductive particles are fully dispersed and uniformly distributed in the flexible substrate material. The flexible colloid polymer is one or a mixture of Polydimethylsiloxane (PDMS), silica gel or rubber and polyimide, and the conductive particles are metal micro-rods and microspheres, or materials such as graphene, carbon nanotube particles or polymer conductive balls. Conductive polymers with embedded conductive fillers are preferred, which are readily available and low cost. The invention adopts the pressure-sensitive material and dopes the conductive material to form the high-sensitivity mixed material, and takes the mixed material as the main component of the pressure-sensitive structure of the flexible pressure sensor, the sensitivity of the mixed material is far higher than that of the traditional monocrystalline silicon sensor. Fig. 2(e) is a diagram of a pressure sensor with a pressure sensitive structure using PDMS + novel nanostructure materials.
Eighth step: and separating the pressure sensitive structure from the Si sheet substrate to obtain the sparse pressure sensitive structure 30. Preferably, a KOH, HCl or TMAH solution is adopted to separate the pressure-sensitive material from the silicon wafer substrate, and the mass percentage concentration of the KOH, HCl or TMAH solution is 0.1-30%.
The ninth step: and sputtering a metal layer with a certain thickness (preferably not more than 50 micrometers) on one side or two sides of the sparse pressure-sensitive structure by using a magnetron sputtering, evaporation or spin coating process method and the like. The metal layer should be made of a material having good conductivity and a resistivity of 10-8-1 Ω m, such as Au, Al, Pt, Ni, Ti, Cr or a conductive polymer material. On the basis of the scheme, the contact area between the pressure-sensitive sparse structure and other layers is further increased, the contact resistance between the pressure-sensitive sparse structure and other layers is reduced, the sensitivity of the pressure-sensitive coefficient structure and materials is fully exerted, and the system performances such as the sensitivity of the flexible pressure sensor are further improved.
The tenth step: connecting a pressure sensitive sparse layer 30 with the sensor electrode material; or combining a plurality of pressure-sensitive sparse layers and connecting the pressure-sensitive sparse layers with the sensor electrode material; or combining at least one pressure-sensitive sparse layer and at least one pressure-sensitive dense layer and then connecting the pressure-sensitive sparse layer and at least one pressure-sensitive dense layer with a sensor electrode material to form the pressure-sensitive structure flexible pressure sensor.
The foregoing is only a preferred application of the present invention, and it should be noted that, for those skilled in the art, various modifications and improvements can be made without departing from the technical principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (10)
1. A flexible pressure sensor with a pressure sensitive structure, characterized by being formed by an upper electrode (10), a lower electrode (20) and a flexible pressure sensitive structure located therebetween; the flexible pressure sensitive structure comprises at least one pressure sensitive sparse layer (30).
2. The flexible pressure sensor according to claim 1, wherein the pressure-sensitive sparse layer (30) has a shape satisfying a nonlinear relationship between a contact area deformation and an applied pressure change curve, and the pressure-sensitive sparse layer (30) has a shape of a plurality of rectangles, cylinders, triangles, trapezoids, rhombuses, hexagons or pentagons arranged side by side.
3. The flexible pressure sensor of claim 1 wherein the flexible pressure sensitive structure further comprises at least one pressure sensitive dense layer (40), the pressure sensitive dense layer (40) being a pressure sensitive material having a linear curve of superimposed contact area deformation versus applied pressure.
4. The flexible pressure sensor according to claim 3, wherein the pressure sensitive dense layer (40) is in contact with the upper electrode (10) and the pressure sensitive sparse layer (30) is in contact with the lower electrode (20).
5. The flexible pressure sensor according to claim 4, wherein the pressure-sensitive sparse layer (30) is a plurality of triangular structures arranged side by side, the base of each triangular structure is in close contact with the pressure-sensitive dense layer (40), the pressure-sensitive dense layer (40) is in contact with the upper electrode (10), and the pressure-sensitive sparse layer (30) is in contact with the lower electrode (20).
6. The flexible pressure sensor according to claim 4, wherein the pressure-sensitive sparse layer (30) is a plurality of triangular structures arranged side by side, the base of each triangular structure is in close contact with the lower electrode (20), the vertex of each triangular structure is in contact with one end of the pressure-sensitive dense layer (40), and the other end of the pressure-sensitive dense layer (40) is in contact with the upper electrode (10).
7. The flexible pressure sensor according to claim 1, wherein the flexible pressure sensitive structure is composed of at least one pressure sensitive dense layer (40) in the middle and at least one pressure sensitive sparse layer (30) on the upper and lower sides of the pressure sensitive dense layer (40), respectively.
Preferably, the pressure-sensitive sparse layer (30) is in a plurality of triangular structures arranged side by side, the triangular vertex of the pressure-sensitive sparse layer (30) positioned on the upper side is in contact with the upper electrode (10), and the triangular base of the pressure-sensitive sparse layer (30) positioned on the lower side is in close contact with the lower electrode (20).
8. The flexible pressure sensor according to claim 1, wherein the flexible pressure sensitive structure comprises at least one pressure sensitive dense layer (40) in contact with the upper electrode (10) and the lower electrode (20), respectively, and at least two pressure sensitive sparse layers (30) are arranged between the two pressure sensitive dense layers (40).
Preferably, the pressure-sensitive sparse layer (30) is formed of a plurality of juxtaposed triangular structures with the apexes of the triangles disposed opposite and in contact.
Preferably, the pressure-sensitive sparse layer (30) is formed of a plurality of juxtaposed isosceles trapezoid structures, and upper bases of the isosceles trapezoids are disposed oppositely and in contact.
9. The flexible pressure sensor of claim 1, wherein the flexible pressure-sensitive structure comprises an upper trapezoidal structure and a lower trapezoidal structure which are juxtaposed, and the upper bottom edges of the upper trapezoidal structure and the lower trapezoidal structure are arranged in opposite contact to form a pressure-sensitive sparse layer (30).
10. The flexible pressure sensor according to claim 1, wherein a metallic conductive layer (50) is arranged between the surface of the flexible pressure sensitive structure and the flexible pressure sensitive structure.
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Application publication date: 20210219 |