CN206721360U - A kind of Metalorganic chemical vapor deposition device - Google Patents
A kind of Metalorganic chemical vapor deposition device Download PDFInfo
- Publication number
- CN206721360U CN206721360U CN201720487244.6U CN201720487244U CN206721360U CN 206721360 U CN206721360 U CN 206721360U CN 201720487244 U CN201720487244 U CN 201720487244U CN 206721360 U CN206721360 U CN 206721360U
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- CN
- China
- Prior art keywords
- outer tube
- air inlet
- chemical vapor
- vapor deposition
- carrier gas
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
A kind of Metalorganic chemical vapor deposition device, including carrier gas feeding unit, organic metal tank, double hose heating furnace and the tail gas treating unit being sequentially connected；Wherein double hose heating furnace includes calandria, outer tube and inner tube, and the air inlet of outer tube is connected with organic metal tank, and the gas outlet of outer tube is connected with tail gas treating unit, inner tube is used for bearing substrate, one end of inner tube is opening, and for the other end to remain silent, openend is relative with the air inlet of outer tube；Organic metal tank is arranged in constant temperature bath.According to Metalorganic chemical vapor deposition device of the present utility model, designed by air inlet pipeline and structure of reactor, the deposition efficiency of organo-metallic compound can be greatly improved, reduce thin film deposition cost.
Description
Technical field
It the utility model is related to chemical reactor, and in particular to a kind of Metalorganic chemical vapor deposition device.
Background technology
Use organo-metallic compound for raw material by chemical vapour deposition technique (Chemical vapor deposition,
CVD) have the characteristics that cost is low, simple to operate, product purity is high to prepare metal or sull.CVD experiment influence because
Element is more, and the pattern of product is difficult to control, and existing report is concentrated mainly on reaction condition such as reaction temperature, gas flow, system
Influence of the pressure and other parameters to final product, few researchers pay close attention to the local flow field in reactor.Actually experiment condition,
Type and size of reactor etc. have built localized chemical environment different in reactor jointly, so as to affect the pattern of film
And property.The localized chemical environment of reactor under different experimental conditions is studied, so as to obtain experiment condition, type of reactor, office
Portion's chemical environment and product receive/micro-structural between relation, receive/the controllable growth of micro- product so as to realize.
Utility model content
The purpose of this utility model is to overcome some in the prior art or some shortcoming, there is provided a kind of organometallic
Learn vapor phase growing apparatus.
According to Metalorganic chemical vapor deposition device of the present utility model, including be sequentially connected carrier gas feeding unit,
Organic metal tank, double hose heating furnace and tail gas treating unit；Wherein double hose heating furnace includes calandria, outer tube and inner tube,
The air inlet of outer tube is connected with organic metal tank, and the gas outlet of outer tube is connected with tail gas treating unit, and inner tube is used for carrying sample,
One end of inner tube is opening, and for the other end to remain silent, openend is relative with the air inlet of outer tube；Organic metal tank is arranged on constant temperature
In bath.
Under preferable case, in addition to carrier gas feeding unit, in carrier gas feeding unit and the pipeline of carrier gas feeding unit
On be respectively equipped with flowmeter and preheating unit.
Under preferable case, in addition to it is arranged on the gas mixer chamber at outer tube air inlet.
According to Metalorganic chemical vapor deposition device of the present utility model, set by air inlet pipeline and structure of reactor
Meter, the deposition efficiency of organo-metallic compound can be greatly improved, reduce thin film deposition cost.
Brief description of the drawings
Fig. 1 is the structural representation according to the Metalorganic chemical vapor deposition device of one specific embodiment of the utility model
Figure.
Embodiment
The utility model is further illustrated with reference to the accompanying drawings and examples.Under it will be appreciated by those skilled in the art that
The embodiment of face description is only to exemplary illustration of the present utility model, and any restrictions are made not for it.
Referring to Fig. 1, supplied according to Metalorganic chemical vapor deposition device of the present utility model, including parallel arrangement of carrier gas
Unit and carrier gas feeding unit are answered, carrier gas feeding unit and carrier gas feeding unit can share a source of the gas 1, according to reaction
Need that different sources of the gas can also be connected respectively.Carrier gas flux device 2 is provided with the pipeline of carrier gas feeding unit and carrier gas is pre-
Hot cell 4, dilution air flow gauge 3 and carrier gas preheating unit 5 are provided with the pipeline of carrier gas feeding unit.It is single by preheating
Member preheats to carrier gas and carrier gas, so as to improve the efficiency of cracking deposition reaction.
Carrier gas feeding unit is connected with organic metal tank 6 by pipeline, and organic metal tank 6 is used for holding Organometallic compounds
Thing liquid body, carrier gas air inlet pipe and carrier gas escape pipe are inserted with organic metal tank 6.Carrier gas air inlet pipe is inserted into organic metal tank 6
Below liquid level, carrier gas escape pipe is exposed at more than liquid level.Organic metal tank 6 is arranged in constant temperature bath 7, according to Organometallic compounds
The volatilization property of thing, can select water-bath or oil bath.Measuring cell 9 can be set on carrier gas outlet pipe, for monitor containing
The nebulizer gas pressure of machine metallic compound, according to nebulizer gas pressure change come the bath temperature of regulating thermostatic bath 7.
Carrier gas escape pipe and carrier gas air inlet pipeline are converged by gas mixer chamber 8, the outlet of gas mixer chamber 8 with it is two-tube
The air inlet connection of the outer tube 10 of formula heating furnace, the periphery of outer tube 10 are provided with calandria 11, are less than in outer tube 10 provided with diameter
The inner tube 12 of the diameter of outer tube 10, inner tube 12 are used for bearing substrate 13.One end of inner tube 12 is opening, and the other end is open to remain silent
End is relative with the air inlet of outer tube 10.The opening from inner tube 12 containing organic metal compound vapor entered from the air inlet of outer tube 10
Mouth end enters inner tube 12, cracking reaction occurs in high-temperature region, in the surface deposition film of matrix 13, post-depositional gas is in arrival
Returned again after the closed end of pipe 12, uncracked organo-metallic compound is deposited on the surface of matrix 13 again.Pass through
The inner tube 12 for setting the one end open other end to remain silent, can effectively extend the residence time of organo-metallic compound, greatly improve
The deposition efficiency of organo-metallic compound.
The gas outlet of outer tube 10 is connected with tail gas treating unit 14, is discharged again after tail gas is purified.
Illustrated above is only preferred embodiment of the present utility model, all impartial changes done according to the utility model claims
Change or modify, the covering scope of the utility model claims all should be belonged to.
Claims (3)
1. a kind of Metalorganic chemical vapor deposition device, it is characterised in that including the carrier gas feeding unit, organic being sequentially connected
Metal can, double hose heating furnace and tail gas treating unit；Wherein double hose heating furnace includes calandria, outer tube and inner tube, outer tube
Air inlet be connected with organic metal tank, the gas outlet of outer tube is connected with tail gas treating unit, and inner tube is used for bearing substrate, inner tube
One end be opening, for the other end to remain silent, openend is relative with the air inlet of outer tube；Organic metal tank is arranged on constant temperature bath
In.
2. Metalorganic chemical vapor deposition device according to claim 1, it is characterised in that also supplied including carrier gas
Unit, flowmeter and preheating unit are respectively equipped with the pipeline of carrier gas feeding unit and carrier gas feeding unit.
3. Metalorganic chemical vapor deposition device according to claim 2, it is characterised in that also include being arranged on outer tube
Gas mixer chamber at air inlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720487244.6U CN206721360U (en) | 2017-05-04 | 2017-05-04 | A kind of Metalorganic chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720487244.6U CN206721360U (en) | 2017-05-04 | 2017-05-04 | A kind of Metalorganic chemical vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206721360U true CN206721360U (en) | 2017-12-08 |
Family
ID=60508575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720487244.6U Expired - Fee Related CN206721360U (en) | 2017-05-04 | 2017-05-04 | A kind of Metalorganic chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206721360U (en) |
-
2017
- 2017-05-04 CN CN201720487244.6U patent/CN206721360U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171208 Termination date: 20180504 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |