CN201826011U - Water vapor expanding device for growth of oxide semiconductor thin film - Google Patents
Water vapor expanding device for growth of oxide semiconductor thin film Download PDFInfo
- Publication number
- CN201826011U CN201826011U CN2010205591630U CN201020559163U CN201826011U CN 201826011 U CN201826011 U CN 201826011U CN 2010205591630 U CN2010205591630 U CN 2010205591630U CN 201020559163 U CN201020559163 U CN 201020559163U CN 201826011 U CN201826011 U CN 201826011U
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- semiconductor thin
- oxide semiconductor
- substrate
- water vapor
- heater
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Abstract
The utility model discloses a water vapor expanding device for growth of an oxide semiconductor thin film and relates to the technical field of growth of semiconductor thin films. An upper heater and a lower heater are arranged in a vertical reaction chamber in the lower vertical direction, wherein the upper heater is a resistance heating device taking graphite as a heating matrix; the lower heater is a resistance heating device taking a quartz plate as a heating matrix; and a water vapor generating system is connected on one side of the vertical reaction chamber, and a waste gas exhaust hole is arranged on the opposite side. The water vapor expanding device is low in cost and is provided with a temperature gradient between a source and a substrate of the device, and water vapor and volatized metal steam can be subjected to oxidation reaction on the surface of the substrate under the action of the temperature gradient, so that the uniform and high-quality oxide semiconductor thin film can be further grown out. Metal raw material in the reaction chamber is arranged at the lower part, and the substrate is arranged at the upper part, so that the deposition of impurities in environment on the substrate can be effectively avoided, and the compact, uniform and high-quality oxide semiconductor thin film can grow out.
Description
Technical field
The utility model relates to the Semiconductor Film Growth technical field, especially a kind of equipment that utilizes gaseous substance at a solid surface growing metal oxide semiconductor thin-film, it mainly is the substrate surface that the gaseous substance that contains the epitaxial film composition is transported to heating, by the gas molecule diffusion and in substrate surface generation oxidizing reaction, generation has the semiconductor film of certain crystallographic structure, belongs to chemical vapour deposition technique.
Background technology
Chemical vapour deposition is to utilize gaseous substance to carry out chemical reaction at a solid surface, generates the process of solid-state deposit, belongs to the vapor phase growth process.The used reaction system of chemical vapour deposition can form the combination of the illuvium or the material layer of required material, and other reaction product is volatile matter.Can prepare different chemical composition, different simple substance or the compound semiconductor film of character by selecting parameters such as suitable gas composition, concentration, flow, underlayer temperature, vacuum tightness.Production of thin film by chemical gas-phase deposition, rate of film build is fast, can be in the even film forming in complex-shaped surface.Because the film-forming temperature height, the unrelieved stress of film is little, and the mean free path of molecule is big in the deposition, can be made into densification, evenly, level and smooth, well-crystallized's semiconductor film.
Yet for the aumospheric pressure cvd device, the general device cost is higher, and the pipeline complexity usually will use such as off-set facility such as plasma enhancing, electron cyclotron resonaces, and its gaseous source mostly is expensive high-purity metal organic compound.In the reaction chamber of general chemical vapor deposition unit, the gaseous source nozzle is last, and substrate is following, and it is even inadequately that source material is deposited on the substrate, and particularly edges of substrate and central part differ greatly.In addition, in the reaction chamber environment of this structure, easily deposit on substrate of impurity.
The utility model content
It is a kind of with low cost that the purpose of this utility model is to provide, and is the steam epitaxial apparatus of source material with steam and metallic vapor.
The utility model comprises that steam produces system and vertical response chamber, and an indoor upper heater and the following well heater of being provided with of described vertical response, described upper heater and following well heater are arranged on the vertical direction; Described upper heater is for being the resistive heating device that adds hot basal body with graphite; Described down well heater is for being the resistive heating device that adds hot basal body with quartz plate; Described steam generation system is connected a side of described vertical response chamber, and the opposite side relative with this side is provided with steam exhaust port.
The steam epitaxial apparatus that the utility model provides, with low cost, a thermograde is arranged, between its source and the substrate under the effect of thermograde, steam and volatilized metallic vapor be in substrate surface generation oxidizing reaction, thereby grow even high-quality oxide semiconductor thin-film.Raw metal is following in the reaction chamber, and substrate can effectively be avoided the deposition of impurity on substrate in the environment last, can grow fine and close high quality oxide semiconductor film uniformly.
Adjust the distance between source metal and the substrate for convenience, it is indoor that described down well heater is connected vertical response by elevating lever.
Description of drawings
Fig. 1 is a kind of structural representation of the present utility model.
Embodiment
As shown in Figure 1, the utility model is provided with a steam that is made of bubbling bottle 7 and valve 8,9,10 and produces system, also is provided with one group of vertical response chamber 1.
In vertical response chamber 1, be provided with a upper heater 2 and a following well heater 4, upper heater 2 is fixedly connected in the vertical response chamber 1, following well heater 4 is connected in the vertical response chamber 1 by elevating lever 6, and upper heater 2 and following well heater 4 are arranged on the vertical direction.
Steam produces system by the side of pipe connection in vertical response chamber 1, and the opposite side relative with this side is provided with steam exhaust port 11.
Load deionized water in the bubbling bottle 7, bubbling gas is high pure nitrogen or argon gas, and its flow is controlled by mass flowmeter.
Upper heater 2 is a resistive heating device, and adding hot basal body is graphite, is the cylindric of an end opening, and resistance wire places in the graphite cylinder, by microlith English pipe insulation.Temperature thermocouple places in the graphite cylinder wall.
Following well heater 4 is a resistive heating device, and adding hot basal body is quartz plate, and resistance wire places the quartz plate bottom surface, is connected as a single entity by microlith English pipe insulation and with above-mentioned quartz plate.Temperature thermocouple places the quartz plate bottom surface.
The utility model material of two well heaters, 2,4 used temperature thermocouples up and down is nickel chromium triangle-nickel aluminium, and temperature is controlled by programmed temperature control instrument, and heating temperature control interval is 0～900 ℃, and precision is ± 0.1 ℃.
The used substrate of the utility model is close to the graphite cylinder bottom surface of upper heater, and the substrate material can be materials such as silicon, quartz, sapphire, tinsel or pottery.
The used metal-powder of the utility model places in the porcelain boat, and porcelain boat places down on the quartz plate of well heater.Metal-powder can be the low volatile metal of fusing points such as zinc or tin.
The utility model substrate and the distance that holds between the porcelain boat of metal-powder can be regulated by elevating lever 6, and modification scope is between 0～200mm.
The utility model up and down temperature head of two well heaters is controlled between 20～50 ℃, is beneficial to form a thermograde between source and substrate, and under the effect of thermograde, steam and volatilized metallic vapor are in substrate surface generation oxidizing reaction.
The utility model reaction chamber is cylindric, and material is a stainless steel, but reaction chamber wall water flowing cooling.Reaction chamber is a normal pressure, also can vacuumize, and vacuum degree control is 10
-3Below the Pa.
Embodiment 1:
As shown in Figure 1, monocrystalline substrate 3 is fixed in the graphite cylinder bottom surface of upper heater 2.Place the porcelain boat 5 that zinc powder is housed on the quartz plate of following well heater 4, the distance between substrate and the porcelain boat is regulated by elevating lever 6, and the distance of silicon substrate lower surface and zinc powder upper surface is 10mm during reaction.Hold the 200ml deionized water in the bubbling bottle 7.First Open valve 8 before the reaction, valve-off 9 and 10 feeds high pure nitrogen to reaction chamber 1 by inlet mouth, and then valve-off 8, first Open valve 9, back Open valve 10, the steam of generation directly enters reaction chamber 1.The temperature of upper heater 2 remains on 550 ℃, and the temperature of following well heater 4 remains on 580 ℃.The vacuum tightness of reaction chamber 1 is 10
-2Pa, reaction chamber wall water flowing cooling.Under the effect of thermograde, steam and volatilized zinc fume grow the wurtzite zinc oxide semiconductor thin film that has preferred orientation uniformly in surface of silicon generation oxidizing reaction.
Embodiment 2:
Change the metal-powder among the embodiment 1 into tin, the distance of silicon substrate lower surface and tin powder upper surface is adjusted to 20mm by elevating lever 6, and the temperature of upper heater 2 remains on 420 ℃, and the temperature of following well heater 4 remains on 450 ℃.Other condition is identical with embodiment 1 with step.The final rutile phase tindioxide semiconductor film that has preferred orientation uniformly that on silicon substrate, grows.
Claims (2)
1. the steam epitaxial apparatus that is used for the oxide semiconductor thin-film growth, comprise that steam produces system and vertical response chamber, it is characterized in that an indoor upper heater and the following well heater of being provided with of described vertical response, described upper heater and following well heater are arranged on the vertical direction; Described upper heater is for being the resistive heating device that adds hot basal body with graphite; Described down well heater is for being the resistive heating device that adds hot basal body with quartz plate; Described steam generation system is connected a side of described vertical response chamber, and the opposite side relative with this side is provided with steam exhaust port.
2. the steam epitaxial apparatus that is used for oxide semiconductor thin-film growth according to claim 1, it is indoor to it is characterized in that described well heater down is connected vertical response by elevating lever.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205591630U CN201826011U (en) | 2010-09-29 | 2010-09-29 | Water vapor expanding device for growth of oxide semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205591630U CN201826011U (en) | 2010-09-29 | 2010-09-29 | Water vapor expanding device for growth of oxide semiconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201826011U true CN201826011U (en) | 2011-05-11 |
Family
ID=43964560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205591630U Expired - Fee Related CN201826011U (en) | 2010-09-29 | 2010-09-29 | Water vapor expanding device for growth of oxide semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201826011U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102787305A (en) * | 2012-08-02 | 2012-11-21 | 南京航空航天大学 | Device and method for reducing impurity deposit in chemical vapor deposition process |
| CN112369465A (en) * | 2020-10-10 | 2021-02-19 | 浙江农林大学 | Film laminating device and film laminating method thereof |
-
2010
- 2010-09-29 CN CN2010205591630U patent/CN201826011U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102787305A (en) * | 2012-08-02 | 2012-11-21 | 南京航空航天大学 | Device and method for reducing impurity deposit in chemical vapor deposition process |
| CN112369465A (en) * | 2020-10-10 | 2021-02-19 | 浙江农林大学 | Film laminating device and film laminating method thereof |
| CN112369465B (en) * | 2020-10-10 | 2022-09-13 | 浙江农林大学 | Film laminating device and film laminating method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110511 Termination date: 20130929 |