CN210237770U - Gas phase reaction furnace for preparing nano material - Google Patents
Gas phase reaction furnace for preparing nano material Download PDFInfo
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- CN210237770U CN210237770U CN201920903435.5U CN201920903435U CN210237770U CN 210237770 U CN210237770 U CN 210237770U CN 201920903435 U CN201920903435 U CN 201920903435U CN 210237770 U CN210237770 U CN 210237770U
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Abstract
The utility model provides a gas phase reacting furnace for preparing nano-material, include: the furnace body, the furnace body is installed on the furnace body support, its characterized in that: the furnace body is internally provided with an upper heat-conducting plate, a diversion soaking plate, a furnace chamber and two gas mixing chambers, the lower part of the furnace body is provided with an opening, the upper heat-conducting plate and the two diversion soaking plates are wrapped outside the furnace chamber, and the gas mixing chambers are positioned on the outer sides of the diversion soaking plates; the furnace body is also provided with a lifting system below, the upper part of the lifting system is provided with a lifting platform, a furnace door and a lower heat conducting plate, and the furnace door and the opening at the lower part of the furnace body are sealed by adopting an air-tight structure. The beneficial effects are as follows: the utility model solves the problems of small area and uneven growth of the nano material prepared by a small CVD vacuum tube furnace.
Description
Technical Field
The utility model relates to the field of nano-material preparation, in particular to a gas phase reaction furnace for preparing nano-material.
Background
At present, the chemical vapor CVD method is an effective method for controllably preparing a large-area nano material, and the main principle of the method is to use planar metal or ceramic as a substrate, introduce a certain amount of carbon source precursor into a high-temperature environment, and deposit on the surface of the metal or ceramic after interaction to obtain the nano material. The chemical vapor deposition CVD method takes carbon-containing substances as carbon sources, decomposes the carbon sources at a high temperature, rearranges carbon atoms on the surface of a metal or ceramic substrate through decomposition after the high temperature, and grows the nano material. The nano material prepared by the chemical vapor CVD method generally has larger area, higher structure quality, less defects and controllable layer number. However, the chemical vapor CVD method for preparing the nano-material basically stays in the laboratory stage, and the nano-material is prepared by using a small-sized CVD vacuum tube test furnace, so that the size of the base material is limited, and the growth of the nano-material is not uniform because the base material is subjected to unidirectional ventilation in a heating tube.
SUMMERY OF THE UTILITY MODEL
The utility model provides a gas phase reaction furnace for preparing nanometer materials, which solves the problems of small area and uneven growth of nanometer materials prepared by a small and medium-sized CVD vacuum tube furnace in the prior art.
The technical scheme of the utility model is realized like this: a gas phase reactor for producing nanomaterials, the composition of which comprises: the furnace body is arranged on a furnace body bracket and also comprises an air supply system and a lifting system, wherein the air supply system is arranged outside the furnace body and is communicated with the furnace body through an air pipe, an upper heat-conducting plate, a diversion soaking plate, a furnace chamber and two air mixing cavities are arranged in the furnace body, the lower part of the furnace body is provided with an opening, the upper heat-conducting plate and the two diversion soaking plates are wrapped outside the furnace chamber, and the air mixing cavities are positioned outside the diversion soaking plates; the furnace body is characterized in that a lifting system is further arranged below the furnace body, a lifting platform, a furnace door and a lower heat conducting plate are arranged on the upper portion of the lifting system, and the furnace door and an opening in the lower portion of the furnace body are sealed in an air-tight structure.
The two sets of gas supply systems are respectively communicated with the two gas mixing cavities through gas pipes, the outer side of the furnace body is also respectively provided with a left side exhaust hole and a right side exhaust hole, and the left side exhaust hole and the right side exhaust hole are also communicated with the gas mixing cavities.
The furnace body is also internally provided with a plurality of heating devices, the heating devices are positioned at the outer side of the inner wall of the furnace chamber, and the lower parts of the heating devices penetrate through the diversion soaking plate and are inserted into the middle part of the furnace chamber.
The flow guiding soaking plate is a porous gas passing plate with a protruding flow guide in the middle.
The utility model has the advantages that:
1. in the shape, structure and combination thereof, the guide soaking plate, the upper heat conducting plate and the lower heat conducting plate are arranged outside the heating device in the furnace chamber, and the heat conducting plates can enable a point heating heat source of the heating device to pass through the special material performance of the heat conducting plates, so that the heat is uniformly conducted to the material, the material is heated more uniformly, and the material is turned over more completely;
2. two conical gas mixing cavities are arranged on two sides of the furnace cavity, after multi-path gas enters the furnace through a gas supply system, preheating and mixing are carried out in the conical gas mixing cavities, and the mixed gas passes through the fine holes on the diversion soaking plate, so that the gas uniformly flows to the heating cavity and can be fully contacted with materials;
3. both sides at the furnace body all have exhaust hole and inlet port, in order to make the material can evenly carry out the vapor deposition reaction, when carrying out the reaction, the reaction time of first half is admitted air from left inlet port, is discharged from the right side exhaust hole, and the reaction of second half is transferred and is admitted air the exhaust direction, admits air from the right side inlet port, and the exhaust of left side exhaust hole lets reaction gas fully and material surface contact, avoids appearing the inhomogeneous phenomenon of reaction deposition.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without any creative effort belong to the protection scope of the present invention.
A gas phase reaction furnace for preparing nano material as shown in fig. 1, which comprises: the furnace body 15, the furnace body 15 is installed on furnace body support 1, the outer casing of the furnace body 15 is a steel plate seal structure, also include the air supply system 2, the lifting system 11, the air supply system 2, the lifting system 11 is controlled and operated by a set of automatic control system, the air supply system 2 is set up in the outside of the furnace body 15 and communicates with left side inlet 4 and right side inlet 13 of the furnace body 15 separately through the air pipe, there are upper heat-conducting plates 7, diversion soaking plate 6, furnace chamber 16, two air mixing chambers 5 in the furnace body 15, there are openings in the lower part of the furnace body 15, upper heat-conducting plate 7 and two diversion soaking plates 6 wrap up in the outside of furnace chamber 16, the conical air mixing chamber 5 locates at the outside of the diversion soaking plate 6, the diversion soaking plate 6 is a porous gas through plate with protruding diversion in the middle, the gas is mixed evenly in the air mixing; the furnace body 15 is also provided with a lifting system 11 below, the upper part of the lifting system 11 is provided with a lifting platform 17, a furnace door 10, a lower heat-conducting plate 9 and materials 8, the furnace door 10 is arranged on the lifting platform 17, the lower heat-conducting plate 9 is positioned on the upper part of the furnace door 10, the materials 8 are placed on the lower heat-conducting plate 9, the materials 8 are arranged on the lower heat-conducting plate 9 and are sent into a furnace chamber 16 by the lifting system 11, and after the furnace door 10 is lifted to the top, the furnace door 10 and the lower opening of the furnace body.
The two sets of air supply systems 2 are respectively communicated with the left air mixing cavity 5 and the right air mixing cavity 5 through air pipes, the outer side of the furnace body 15 is also respectively provided with a left air exhaust hole 3 and a right air exhaust hole 14, the left air exhaust hole 3 and the right air exhaust hole 14 are also communicated with the air mixing cavities 5, air valves which can be opened and closed are arranged on the left air exhaust hole 3 and the right air exhaust hole 14, and air in the furnace chamber 16 can be emptied through the air supply systems 2.
The furnace body 15 is also provided with a plurality of heating devices which are positioned at two sides of the inner wall of the furnace chamber 16 and are uniformly arranged, and the lower parts of the heating devices penetrate through the diversion soaking plates 6 and are inserted into the middle part of the furnace chamber 16 to heat the furnace chamber 16.
The first embodiment is as follows:
along with the descending of the lifting system 11, the furnace door 10 at the lower part of the furnace body 15 also descends to the position of charging, the materials 8 are placed on the lower heat conducting plate 9, the lifting system 11 rises until the furnace door 10 and the furnace body 15 are completely closed and sealed, after the furnace chamber 16 is sealed, the furnace chamber 16 is vacuumized through the left exhaust hole 3 and the right exhaust hole 14, then the protective gas is filled through the left air inlet 4 of the gas supply system 2, the protective gas enters the furnace chamber 16 through the gas mixing cavity 5 and the flow guiding soaking plate 6, at the moment, the heating device is started to heat the furnace chamber 16, after heating to a certain temperature, the gas supply system 2 fills the reaction gas through the left air inlet 4, the reaction gas is preheated in the left gas mixing cavity 5, then enters the furnace chamber 16 through the flow guiding soaking plate 6 to react with the materials 8, the residual gas is discharged through the right exhaust hole 14, after, closing the left air inlet 4 and the right air outlet 14, opening the right air inlet 13, preheating and mixing the gas in the right gas mixing cavity 5, and then entering the furnace chamber 16 through the diversion vapor chamber 6 for reaction, thereby completing the reaction time the same as the left air inlet; then closing the reaction gas, continuously filling the protective gas, reducing the power of the heating device, gradually reducing the temperature, descending the lifting system 11 when the temperature is reduced to a specific temperature, opening the furnace door 10 at the lower part, cooling to the room temperature, and taking down the material 8 which is deposited and reacted from the heat conducting plate 9 at the lower part.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A gas phase reactor for producing nanomaterials, the composition of which comprises: the furnace body, the furnace body is installed on the furnace body support, its characterized in that: the furnace body is internally provided with an upper heat-conducting plate, a diversion soaking plate, a furnace chamber and two gas mixing chambers, the lower part of the furnace body is provided with an opening, the upper heat-conducting plate and the two diversion soaking plates are wrapped outside the furnace chamber, and the gas mixing chambers are positioned on the outer sides of the diversion soaking plates; the furnace body is characterized in that a lifting system is further arranged below the furnace body, a lifting platform, a furnace door and a lower heat conducting plate are arranged on the upper portion of the lifting system, and the furnace door and an opening in the lower portion of the furnace body are sealed in an air-tight structure.
2. The gas-phase reaction furnace for producing nanomaterial of claim 1, characterized in that: the two sets of gas supply systems are respectively communicated with the two gas mixing cavities through gas pipes, the outer side of the furnace body is also respectively provided with a left side exhaust hole and a right side exhaust hole, and the left side exhaust hole and the right side exhaust hole are also communicated with the gas mixing cavities.
3. The gas-phase reaction furnace for producing nanomaterial of claim 1, characterized in that: the furnace body is also internally provided with a plurality of heating devices, the heating devices are positioned at the outer side of the inner wall of the furnace chamber, and the lower parts of the heating devices penetrate through the diversion soaking plate and are inserted into the middle part of the furnace chamber.
4. The gas-phase reaction furnace for producing nanomaterial of claim 1, characterized in that: the flow guiding soaking plate is a porous gas passing plate with a protruding flow guide in the middle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201920903435.5U CN210237770U (en) | 2019-06-17 | 2019-06-17 | Gas phase reaction furnace for preparing nano material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920903435.5U CN210237770U (en) | 2019-06-17 | 2019-06-17 | Gas phase reaction furnace for preparing nano material |
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| CN210237770U true CN210237770U (en) | 2020-04-03 |
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| CN201920903435.5U Active CN210237770U (en) | 2019-06-17 | 2019-06-17 | Gas phase reaction furnace for preparing nano material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110144568A (en) * | 2019-06-17 | 2019-08-20 | 郑州大工高新科技有限公司 | A kind of gas phase reaction furnace being used to prepare nano material |
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2019
- 2019-06-17 CN CN201920903435.5U patent/CN210237770U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110144568A (en) * | 2019-06-17 | 2019-08-20 | 郑州大工高新科技有限公司 | A kind of gas phase reaction furnace being used to prepare nano material |
| CN110144568B (en) * | 2019-06-17 | 2024-02-27 | 郑州大工高新科技有限公司 | Gas-phase reaction furnace for preparing nano material |
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Effective date of registration: 20200423 Address after: 450000 102, No. 2 building, Xinghua building, 58 Avenue, second Zhengzhou street, Zhengzhou, Henan. Patentee after: Zhengzhou great Gong high and new technologies Co.,Ltd. Address before: 450000 102, No. 2 building, Xinghua building, 58 Avenue, second Zhengzhou street, Zhengzhou, Henan. Co-patentee before: Dalian University of Technology's Grand Equipments design and manufacture Zhengzhou Research Institute Patentee before: Zhengzhou great Gong high and new technologies Co.,Ltd. |
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Effective date of registration: 20220809 Address after: No. 102, Building 2, Xinghua Building, No. 58, Second Street, Henan Free Trade Pilot Zone, Zhengzhou Area (Jingkai), Zhengzhou City, Henan Province, 450000 Patentee after: Zhengzhou great Gong high and new technologies Co.,Ltd. Patentee after: DALIAN University OF TECHNOLOGY Address before: 450000 102, No. 2 building, Xinghua building, 58 Avenue, second Zhengzhou street, Zhengzhou, Henan. Patentee before: Zhengzhou great Gong high and new technologies Co.,Ltd. |
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