CN206505937U - A kind of PERC solar cells with hollow hole - Google Patents
A kind of PERC solar cells with hollow hole Download PDFInfo
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- CN206505937U CN206505937U CN201720163499.7U CN201720163499U CN206505937U CN 206505937 U CN206505937 U CN 206505937U CN 201720163499 U CN201720163499 U CN 201720163499U CN 206505937 U CN206505937 U CN 206505937U
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- hollow hole
- bsf
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- silicon nitride
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of PERC solar cells with hollow hole, including the back of the body silver electrode set gradually from bottom to top, Al-BSF, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type silicon, front side silicon nitride film and positive silver electrode, solar cell is overleaf further opened with opening the back side silicon nitride, after the backside oxide aluminium film until multi-stripe laser slotted zones of P-type silicon, filled with back of the body aluminum strip in each lbg area, using aluminum slurry, integrally printing is molded the back of the body aluminum strip with described Al-BSF, Al-BSF is connected by carrying on the back aluminum strip with P-type silicon, the Al-BSF has a plurality of hollow out band, a plurality of hollow out band is distributed with multi-stripe laser slotted zones in alternate intervals shape, each hollow out band is spaced apart each along the direction parallel with lbg area and is provided with row's hollow hole.The solar cell can reduce battery flexibility, reduce fragment rate.
Description
Technical field
The utility model is related to technical field of solar batteries, specifically refers to a kind of PERC solar-electricities with hollow hole
Pond.
Background technology
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, and electricity is converted optical energy into using photovoltaic effect
The device of energy, when solar irradiation is in semiconductor P-N junction, forms new hole-electron pair, empty in the presence of P-N junction electric field
Cave flows to P areas by N areas, and electronics flows to N areas by P areas, connects and electric current is just formed after circuit.
Conventional crystalline silicon solar cell substantially only with front passivating technique, is sunk in front side of silicon wafer with PECVD mode
One layer of silicon nitride of product, the few son of reduction can significantly lift the open-circuit voltage of crystal silicon battery and short in the recombination rate on preceding surface
Road electric current, so as to lift the photoelectric transformation efficiency of crystal silicon solar battery.
With the requirement more and more higher of the photoelectric transformation efficiency to crystal silicon battery, people begin one's study back of the body passivating solar battery
Technology.Passivation cell complex process is carried on the back, photoelectric transformation efficiency is high, but as conventional batteries, however it remains the bending of battery
The problem of spending big.Flexibility is excessive, and visitor family influences the product of component by cell package into the yield rate of component under the influence of meeting
Matter.
In process of production, back of the body passivation cell may require that the aluminium paste matched with the frequent tune of the technological parameters such as aluminium paste weight in wet base
Section, process window is small, the photoelectric transformation efficiency of influence large-scale production and battery.And for PERC solar cells, aluminium paste
It is to influence the crucial auxiliary material of photoelectric transformation efficiency again with corresponding printing-sintering technique, it is therefore desirable to solve battery from other links
Flexibility problem.
Utility model content
The purpose of this utility model is to provide a kind of PERC solar cells with hollow hole, and the solar cell passes through
Multiple hollow holes are set in Al-BSF, improve the stress distribution of silicon chip, the weight of Al-BSF is reduced, battery flexibility is reduced,
Fragment rate is reduced, the quality of PERC solar cells is improved.
What this purpose of the present utility model was realized by the following technical solutions：A kind of PERC with hollow hole is too
Positive energy battery, including back of the body silver electrode, Al-BSF, back side silicon nitride, backside oxide aluminium film, the p-type set gradually from bottom to top
Silicon, N-type silicon, front side silicon nitride film and positive silver electrode, the solar cell are overleaf further opened with opening the back side silicon nitride
Until the multi-stripe laser slotted zones of P-type silicon, multi-stripe laser slotted zones be arranged in parallel after silicon fiml, backside oxide aluminium film, each laser
Filled with back of the body aluminum strip in slotted zones, using aluminum slurry, integrally printing is molded the back of the body aluminum strip with described Al-BSF, Al-BSF
It is connected by carrying on the back aluminum strip with P-type silicon, it is characterised in that：The Al-BSF has a plurality of hollow out band, and a plurality of hollow out band is also parallel to be set
Put, and it is parallel with lbg area, and a plurality of hollow out band is distributed with multi-stripe laser slotted zones in alternate intervals shape, and each is engraved
Blanking bar is spaced apart each along the direction parallel with lbg area and is provided with row's hollow hole.
Full Al-BSF in solar cell can produce that battery flexibility is excessive, and flexibility, which crosses conference, causes follow-up downstream
Fragment rate when client is packaged into component is too high, influences the yield rate and quality of component, while increasing battery fragment rate, it is impossible to
Ensure the quality of PERC solar cells.Al-BSF in the utility model solar cell uses the office provided with multiple hollow holes
Portion's Al-BSF, improves the stress distribution of silicon chip, reduces the weight of Al-BSF, reduces battery flexibility, while reducing the broken of battery
Piece rate, improves further battery and is packaged into the yield rate of component and the quality of component..
In the utility model, the hollow hole is circular or triangle or quadrangle or pentagon or hexagon.
As the presently preferred embodiments, the hollow hole is circle, a diameter of 0.5~5mm.The hollow hole be equilateral triangle or
Square or regular pentagon or regular hexagon, the length of side are 0.5~5mm.
Spacing between the equal spaced set of hollow hole of each row, two neighboring hollow hole is 0.5~3mm
In the utility model, the width in the lbg area is 20~100 microns.
The thickness of the back side silicon nitride is 80~300 microns.
The thickness of the backside oxide aluminium film is 2~30nm.
Compared with prior art, solar cell of the present utility model can reduce battery flexibility, while reducing battery
Fragment rate, equipment investment cost is low, and technique is simple, and good with current production line compatibility.
Brief description of the drawings
The utility model is described in further detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the overall structure sectional view for the PERC solar cells that the utility model has hollow hole；
Fig. 2 is the plan that the utility model has Al-BSF in the PERC solar cells of hollow hole, display hollow out band,
Hollow hole and the position corresponding relation in lbg area.
Description of reference numerals
1st, silver electrode is carried on the back, 2, Al-BSF,
3rd, back side silicon nitride, 4, backside oxide aluminium film, 5, P-type silicon, 6, N-type silicon,
7th, front side silicon nitride film, 8, positive silver electrode, 9, lbg area；10th, aluminum strip is carried on the back；11st, hollow out band；12nd, hollow hole.
Embodiment
Embodiment one
The PERC solar cells with hollow hole as shown in Figure 1 and Figure 2, including the back of the body silver set gradually from bottom to top
Electrode 1, Al-BSF 2, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type silicon 6, front side silicon nitride film 7 and positive silver electricity
Pole 8, positive silver electrode 8 is made up of the secondary gate electrode 82 of positive aluminium that positive silver-colored primary gate electrode 81 and material that material is silver are aluminium, positive aluminium pair
Gate electrode 82 and positive silver-colored primary gate electrode 81 are perpendicular, and back of the body silver electrode 1 is aluminium by the silver-colored primary gate electrode 11 of the back of the body and material that material is silver
The secondary gate electrode 12 of back of the body aluminium constitute, the secondary gate electrode 12 of back of the body aluminium and the silver-colored primary gate electrode 11 of the back of the body are perpendicular.
Solar cell is overleaf further opened with opening after back side silicon nitride 3, backside oxide aluminium film 4 up to P-type silicon 5
Multi-stripe laser slotted zones 9, the structure of multi-stripe laser slotted zones 9 is identical, and multi-stripe laser slotted zones 9 be arranged in parallel, and each laser is opened
Filled with back of the body aluminum strip 10 in groove area 9, using aluminum slurry, integrally printing is molded back of the body aluminum strip 10 with Al-BSF 2, and Al-BSF 2 passes through the back of the body
Aluminum strip 10 is connected with P-type silicon 5, and the Al-BSF 2 has a plurality of hollow out band 11, and a plurality of hollow out band 11 also be arranged in parallel, and with swashing
Light slotted zones 9 are parallel, and a plurality of hollow out band 11 is distributed with multi-stripe laser slotted zones 9 in alternate intervals shape, each hollow out band 11
It is spaced apart each along the direction parallel with lbg area 9 and is provided with row's hollow hole 12.
Al-BSF 2 in the utility model solar cell improves silicon chip using the local Al-BSF 2 provided with hollow hole 12
Stress distribution, reduce the weight of Al-BSF 2, reduce battery flexibility, while reducing the fragment rate of battery, improve PERC too
The quality of positive energy battery, it is ensured that the quality of product.
The material of the backside oxide aluminium film 4 of the present embodiment is alundum (Al2O3) (Al2O3), back side silicon nitride 3 and front
The material of silicon nitride film 7 is identical, is silicon nitride (Si3N4).
In the present embodiment, hollow hole 12 is the square hole that the length of side is 3mm, and the hollow hole 12 of each row is equidistantly set
Put, the spacing between two neighboring hollow hole 12 is 2mm, and the width in lbg area 9 is 20 microns, back side silicon nitride 3
Thickness is 150 microns, and the thickness of backside oxide aluminium film 4 is 8nm.
As the conversion of the present embodiment, multi-stripe laser slotted zones 9 can also be the different groove of size.Hollow hole 12 can be with
For circular or triangle or quadrangle or pentagon or hexagon or octagon etc., preferably a diameter of 0.5~5mm circle, or
Person's length of side is 0.5~5mm equilateral triangle or square or regular pentagon or regular hexagon or octagon, two neighboring to engrave
Spacing between emptying aperture can in the range of 0.5~3mm value.
The preparation method of the above-mentioned PERC solar cells with hollow hole, comprises the following steps：
(1) matte is formed in front side of silicon wafer and the back side, silicon chip is P-type silicon 5；
(2) it is diffused to form N-type silicon 6 in front side of silicon wafer, i.e. N-type emitter stage；
(3) PN junction of silicon chips periphery and the front phosphorosilicate glass of diffusion process formation are removed；
(4) silicon chip back side is polished；
(5) backside oxide aluminium film 4 and back side silicon nitride 3 are sequentially depositing in silicon chip back side；
(6) in the front deposition front side silicon nitride film 7 of N-type silicon 6；
(7) lbg is carried out to silicon chip back side, opened up to silicon chip after back side silicon nitride 3, backside oxide aluminium film 4,
Form multi-stripe laser slotted zones 9；
(8) back electrode slurry, drying are printed in silicon chip back side；
(9) silk-screen printing aluminum slurry is used in silicon chip back side, forms Al-BSF 2, form Al-BSF 2, the Al-BSF 2 has
A plurality of hollow out band 11, a plurality of hollow out band 11 is distributed with multi-stripe laser slotted zones 9 in alternate intervals shape, each equal edge of hollow out band 11
The direction parallel with lbg area to be spaced apart provided with row's hollow hole 12, in lbg while Al-BSF 2 are printed
Printing aluminum slurry in area 9, forms back of the body aluminum strip 10, and back of the body aluminum strip 10 is molded with the one printing of Al-BSF 2, dried after printing；
(10) in the front print positive electrode slurry of front side silicon nitride film 7, drying；
(11) high temperature sintering is carried out to silicon chip, forms back of the body silver electrode 1, Al-BSF 2 and positive silver electrode 8；
(12) anti-LID annealings are carried out to silicon chip, forms solar cell.
The order of the present embodiment above-mentioned steps (5) and step (6) can also be overturned, i.e., first carry out step (6), then carry out
Step (5).
Embodiment two
The embodiment two and the difference of embodiment one that the utility model has the PERC solar cells of hollow hole be,
In embodiment two, hollow hole 12 is a diameter of 3mm circular hole, and the width in lbg area 9 is 40 microns, back side silicon nitride 3
Thickness be 200 microns, the thickness of backside oxide aluminium film 4 is 8nm.
Embodiment three
The embodiment three and the difference of embodiment one that the utility model has the PERC solar cells of hollow hole be,
In embodiment three, the width in lbg area 9 is 60 microns, and the thickness of back side silicon nitride 3 is 250 microns, backside oxide aluminium
The thickness of film 4 is 16nm.
Example IV
The example IV and the difference of embodiment one that the utility model has the PERC solar cells of hollow hole be,
In example IV, the width in lbg area 9 is 80 microns, and the thickness of back side silicon nitride 3 is 300 microns, backside oxide aluminium
The thickness of film 4 is 22nm.
Embodiment five
The embodiment five and the difference of embodiment one that the utility model has the PERC solar cells of hollow hole be,
In embodiment five, the width in lbg area 9 is 100 microns, and the thickness of back side silicon nitride 3 is 80 microns, backside oxide aluminium
The thickness of film 4 is 30nm.
Above-described embodiment of the present utility model is not the restriction to the utility model protection domain, reality of the present utility model
Mode not limited to this is applied, all this kind is according to the above of the present utility model, according to the ordinary technical knowledge of this area and used
With means, under the premise of the above-mentioned basic fundamental thought of the utility model is not departed from, the utility model said structure is made its
The modification, replacement or change of its diversified forms, all should fall within protection domain of the present utility model.
Claims (7)
1. a kind of PERC solar cells with hollow hole, including set gradually from bottom to top back of the body silver electrode, Al-BSF, the back of the body
Face silicon nitride film, backside oxide aluminium film, P-type silicon, N-type silicon, front side silicon nitride film and positive silver electrode, the solar cell is in the back of the body
Face is further opened with opening after the back side silicon nitride, backside oxide aluminium film the multi-stripe laser slotted zones until P-type silicon, a plurality of to swash
Light slotted zones are be arranged in parallel, and filled with back of the body aluminum strip in each lbg area, the back of the body aluminum strip is used with described Al-BSF
Aluminum slurry integrally printing shaping, Al-BSF is connected by carrying on the back aluminum strip with P-type silicon, it is characterised in that：The Al-BSF has a plurality of
Hollow out band, a plurality of hollow out band also be arranged in parallel, and parallel with lbg area, a plurality of hollow out band and multi-stripe laser slotted zones
It is distributed in alternate intervals shape, each hollow out band is spaced apart each along the direction parallel with lbg area and is provided with row's hollow out
Hole.
2. there is the PERC solar cells of hollow hole as claimed in claim 1, it is characterised in that：The hollow hole is circle
Or triangle or quadrangle or pentagon or hexagon.
3. there is the PERC solar cells of hollow hole as claimed in claim 2, it is characterised in that：The hollow hole is circle
Shape, a diameter of 0.5~5mm.
4. there is the PERC solar cells of hollow hole as claimed in claim 2, it is characterised in that：The hollow hole is positive three
Angular or square or regular pentagon or regular hexagon, the length of side are 0.5~5mm.
5. there is the PERC solar cells of hollow hole as claimed in claim 2, it is characterised in that：The hollow hole of each row is equal
Spacing between spaced set, two neighboring hollow hole is 0.5~3mm.
6. there is the PERC solar cells of hollow hole as claimed in claim 1, it is characterised in that：The lbg area
Width is 20~100 microns.
7. there is the PERC solar cells of hollow hole as claimed in claim 1, it is characterised in that：The back side silicon nitride
Thickness be 80~300 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720163499.7U CN206505937U (en) | 2017-02-22 | 2017-02-22 | A kind of PERC solar cells with hollow hole |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720163499.7U CN206505937U (en) | 2017-02-22 | 2017-02-22 | A kind of PERC solar cells with hollow hole |
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| CN206505937U true CN206505937U (en) | 2017-09-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106992218A (en) * | 2017-02-22 | 2017-07-28 | 广东爱康太阳能科技有限公司 | A kind of PERC solar cells with hollow hole and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106992218A (en) * | 2017-02-22 | 2017-07-28 | 广东爱康太阳能科技有限公司 | A kind of PERC solar cells with hollow hole and preparation method thereof |
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| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 69, C District, Leping Town Industrial Park, Sanshui, Foshan, Guangdong Patentee after: Guangdong Asahi Polytron Technologies Inc Address before: No. 69, C District, Leping Town Industrial Park, Sanshui, Foshan, Guangdong Patentee before: Guangdong Aiko Solar Energy Technology Co., Ltd. |
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| CP01 | Change in the name or title of a patent holder |