CN107046078A - It is a kind of to be provided with PERC solar cells of hollow out bar and preparation method thereof - Google Patents
It is a kind of to be provided with PERC solar cells of hollow out bar and preparation method thereof Download PDFInfo
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- CN107046078A CN107046078A CN201710096967.8A CN201710096967A CN107046078A CN 107046078 A CN107046078 A CN 107046078A CN 201710096967 A CN201710096967 A CN 201710096967A CN 107046078 A CN107046078 A CN 107046078A
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- hollow out
- bsf
- out bar
- silicon
- back side
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 27
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 27
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 55
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000004411 aluminium Substances 0.000 claims abstract description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 238000007639 printing Methods 0.000 claims abstract description 12
- 239000002002 slurry Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000011267 electrode slurry Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims 1
- 239000012634 fragment Substances 0.000 abstract description 6
- 230000009466 transformation Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of PERC solar cells for being provided with hollow out bar and preparation method thereof, the solar cell includes the back of the body silver electrode set gradually from bottom to top, Al-BSF, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type silicon, front side silicon nitride film and positive silver electrode, the solar cell is overleaf further opened with opening the back side silicon nitride, after the backside oxide aluminium film until multi-stripe laser slotted zones of P-type silicon, filled with back of the body aluminum strip in each lbg area, using aluminum slurry, integrally printing is molded the back of the body aluminum strip with described Al-BSF, Al-BSF is connected by carrying on the back aluminum strip with P-type silicon, the Al-BSF hollow out offers a plurality of continuous hollow out bar, a plurality of hollow out bar is distributed with multi-stripe laser slotted zones in alternate intervals shape.By setting hollow out bar in Al-BSF, battery flexibility, reduction battery fragment rate can be reduced.The present invention discloses the preparation method of the solar cell.
Description
Technical field
The present invention relates to technical field of solar batteries, specifically refer to a kind of PERC solar cells for being provided with hollow out bar and
Its preparation method.
Background technology
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, and electricity is converted optical energy into using photovoltaic effect
The device of energy, when solar irradiation is in semiconductor P-N junction, forms new hole-electron pair, empty in the presence of P-N junction electric field
Cave flows to P areas by N areas, and electronics flows to N areas by P areas, connects and electric current is just formed after circuit.
Conventional crystalline silicon solar cell substantially only with front passivating technique, is sunk in front side of silicon wafer with PECVD mode
One layer of silicon nitride of product, the few son of reduction can significantly lift the open-circuit voltage of crystal silicon battery and short in the recombination rate on preceding surface
Road electric current, so as to lift the photoelectric transformation efficiency of crystal silicon solar battery.
With the requirement more and more higher of the photoelectric transformation efficiency to crystal silicon battery, people begin one's study back of the body passivating solar battery
Technology.Passivation cell complex process is carried on the back, photoelectric transformation efficiency is high, but as conventional batteries, however it remains the bending of battery
The problem of spending big.Flexibility is excessive, and visitor family influences the product of component by cell package into the yield rate of component under the influence of meeting
Matter.
In process of production, back of the body passivation cell may require that the aluminium paste matched with the frequent tune of the technological parameters such as aluminium paste weight in wet base
Section, process window is small, the photoelectric transformation efficiency of influence large-scale production and battery.And for PERC solar cells, aluminium paste
It is to influence the crucial auxiliary material of photoelectric transformation efficiency again with corresponding printing-sintering technique, it is therefore desirable to solve battery from other links
Flexibility problem.
The content of the invention
An object of the present invention is to provide a kind of PERC solar cells for being provided with hollow out bar, and the solar cell passes through
Hollow out bar is set in Al-BSF, improves the stress distribution of silicon chip, the weight of Al-BSF is reduced, battery flexibility, reduction is reduced
Fragment rate, improves the quality of PERC solar cells.
What this purpose of the present invention was realized by the following technical solutions：A kind of PERC solar energy for being provided with hollow out bar
Battery, including set gradually from bottom to top back of the body silver electrode, Al-BSF, back side silicon nitride, backside oxide aluminium film, P-type silicon, N
Type silicon, front side silicon nitride film and positive silver electrode, the solar cell be overleaf further opened with opening the back side silicon nitride,
Until the multi-stripe laser slotted zones of P-type silicon, multi-stripe laser slotted zones be arranged in parallel after backside oxide aluminium film, each lbg area
Inside filled with back of the body aluminum strip, using aluminum slurry, integrally printing is molded the back of the body aluminum strip with described Al-BSF, and Al-BSF passes through the back of the body
Aluminum strip is connected with P-type silicon, it is characterised in that：The Al-BSF hollow out offers a plurality of continuous hollow out bar, a plurality of hollow out bar
It is arranged in parallel, and it is parallel with lbg area, and a plurality of hollow out bar is distributed with multi-stripe laser slotted zones in alternate intervals shape.
Full Al-BSF in solar cell can produce that battery flexibility is excessive, and flexibility, which crosses conference, causes follow-up downstream
Fragment rate when client is packaged into component is too high, influences the yield rate and quality of component, while increasing battery fragment rate, it is impossible to protect
Demonstrate,prove the quality of PERC solar cells.Al-BSF in solar cell of the present invention uses the local Al-BSF provided with hollow out bar,
Improve the stress distribution of silicon chip, reduce the weight of Al-BSF, reduce battery flexibility, while reducing the fragment rate of battery, improve
Further battery is packaged into the yield rate of component and the quality of component.
As the presently preferred embodiments, the structure of the multi-stripe laser slotted zones is identical, and the structure of a plurality of hollow out bar is also identical.
As the presently preferred embodiments, in the present invention, the two ends of the hollow out bar from being 5~50mm with a distance from Al-BSF edge,
The width of hollow out bar is 5~20mm.
The width in the lbg area is 20~100 microns.
The thickness of the back side silicon nitride is 80~300 microns.
The thickness of the backside oxide aluminium film is 2~30nm.
Compared with prior art, solar cell of the invention can reduce battery flexibility, while reducing the broken of battery
Piece rate, equipment investment cost is low, and technique is simple, and good with current production line compatibility.
The second object of the present invention is to provide the preparation method of the above-mentioned PERC solar cells for being provided with hollow out bar.
What this purpose of the present invention was realized by the following technical solutions：The above-mentioned PERC solar energy for being provided with hollow out bar
The preparation method of battery, it is characterised in that this method comprises the following steps：
(1) matte is formed in front side of silicon wafer and the back side, the silicon chip is P-type silicon；
(2) it is diffused to form N-type silicon in the front side of silicon wafer, i.e. N-type emitter stage；
(3) PN junction of silicon chips periphery and the front phosphorosilicate glass of diffusion process formation are removed；
(4) silicon chip back side is polished；
(5) backside oxide aluminium film and back side silicon nitride are sequentially depositing in silicon chip back side；
(6) in the front deposition front side silicon nitride film of N-type silicon；
(7) lbg is carried out to silicon chip back side, opened after back side silicon nitride, backside oxide aluminium film until silicon chip, shape
Into multi-stripe laser slotted zones；
(8) back electrode slurry, drying are printed in the silicon chip back side；
(9) aluminum slurry is printed in the silicon chip back side, forms Al-BSF, the Al-BSF hollow out forms a plurality of continuous hollow out
Bar, a plurality of hollow out bar is distributed with multi-stripe laser slotted zones in alternate intervals shape, in lbg area while Al-BSF is printed
Interior printing aluminum slurry, forms back of the body aluminum strip, integrally printing is molded back of the body aluminum strip with Al-BSF, is dried after printing；
(10) in the front print positive electrode slurry of the front side silicon nitride film, drying；
(11) high temperature sintering is carried out to silicon chip, forms back of the body silver electrode, Al-BSF and positive silver electrode；
(12) anti-LID annealings are carried out to silicon chip, forms solar cell.
The order of above-mentioned steps (5) and step (6) can also be overturned, i.e., first carry out step (6), then carry out step (5).
Brief description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the overall structure sectional view for the PERC solar cells that the present invention is provided with hollow out bar；
Fig. 2 is the plan that the present invention is provided with Al-BSF in the PERC solar cells of hollow out bar, and display hollow out bar is with swashing
The position corresponding relation of light slotted zones.
Description of reference numerals
1st, silver electrode is carried on the back, 2, Al-BSF,
3rd, back side silicon nitride, 4, backside oxide aluminium film, 5, P-type silicon, 6, N-type silicon,
7th, front side silicon nitride film, 8, positive silver electrode,
9th, lbg area；10th, aluminum strip is carried on the back；11st, hollow out bar.
Embodiment
Embodiment one
As shown in Figure 1 and Figure 2 be provided with the PERC solar cells of hollow out bar, including set gradually from bottom to top the back of the body silver
Electrode 1, Al-BSF 2, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type silicon 6, front side silicon nitride film 7 and positive silver electricity
Pole 8, solar cell be overleaf further opened with opening after back side silicon nitride 3, backside oxide aluminium film 4 until P-type silicon 5 it is a plurality of
Lbg area 9, the structure of multi-stripe laser slotted zones 9 is identical, and multi-stripe laser slotted zones 9 be arranged in parallel, each lbg area 9
Inside filled with back of the body aluminum strip 10, using aluminum slurry, integrally printing is molded back of the body aluminum strip 10 with Al-BSF 2, and Al-BSF 2 is by carrying on the back aluminum strip
10 are connected with P-type silicon 5, and the hollow out of Al-BSF 2 offers a plurality of continuous hollow out bar 11, and a plurality of hollow out bar 11 also be arranged in parallel,
And parallel with lbg area 9, the structure of a plurality of hollow out bar 11 is also identical, a plurality of hollow out bar 11 and multi-stripe laser slotted zones
9 are distributed in alternate intervals shape.
Al-BSF 2 in solar cell of the present invention improves answering for silicon chip using the local Al-BSF 2 provided with hollow out bar 11
Power is distributed, and reduces the weight of Al-BSF 2, reduces battery flexibility, while reducing the fragment rate of battery, improves PERC solar energy
The quality of battery, it is ensured that the quality of product.
The material of the backside oxide aluminium film 4 of the present embodiment is alundum (Al2O3) (Al2O3), back side silicon nitride 3 and front
The material of silicon nitride film 7 is identical, is silicon nitride (Si3N4).
In the present embodiment, the two ends of hollow out bar 11 are from being 5mm with a distance from Al-BSF edge, and the width of hollow out bar is 5mm, is swashed
The width of light slotted zones 9 is 20 microns, and the thickness of back side silicon nitride 3 is 150 microns, and the thickness of backside oxide aluminium film 4 is
8nm。
As the conversion of the present embodiment, multi-stripe laser slotted zones 9 can also be the different groove of size, a plurality of hollow out bar 11
Structure can also be different.
The preparation method of the above-mentioned PERC solar cells for being provided with hollow out bar, comprises the following steps：
(1) matte is formed in front side of silicon wafer and the back side, silicon chip is P-type silicon 5；
(2) it is diffused to form N-type silicon 6 in front side of silicon wafer, i.e. N-type emitter stage；
(3) PN junction of silicon chips periphery and the front phosphorosilicate glass of diffusion process formation are removed；
(4) silicon chip back side is polished；
(5) backside oxide aluminium film 4 and back side silicon nitride 3 are sequentially depositing in silicon chip back side；
(6) in the front deposition front side silicon nitride film 7 of N-type silicon 6；
(7) lbg is carried out to silicon chip back side, opened up to silicon chip after back side silicon nitride 3, backside oxide aluminium film 4,
Form multi-stripe laser slotted zones 9；
(8) back electrode slurry, drying are printed in silicon chip back side；
(9) silk-screen printing aluminum slurry is used in silicon chip back side, forms Al-BSF 2, the hollow out of Al-BSF 2 forms a plurality of continuous
Hollow out bar 11, a plurality of hollow out bar 11 and multi-stripe laser slotted zones 9 are distributed in alternate intervals shape, while printing Al-BSF 2
The printing aluminum slurry in lbg area 9, forms back of the body aluminum strip 10, and back of the body aluminum strip 10 is molded with the one printing of Al-BSF 2, printed laggard
Row drying；
(10) in the front print positive electrode slurry of front side silicon nitride film 7, drying；
(11) high temperature sintering is carried out to silicon chip, forms back of the body silver electrode 1, Al-BSF 2 and positive silver electrode 8；
(12) anti-LID annealings are carried out to silicon chip, forms solar cell.
The order of the present embodiment above-mentioned steps (5) and step (6) can also be overturned, i.e., first carry out step (6), then carry out
Step (5).
Embodiment two
The embodiment two and the difference of embodiment one that the present invention is provided with the PERC solar cells of hollow out bar are, implement
In example two, the two ends of hollow out bar 11 are from being 15mm with a distance from Al-BSF edge, and the width of hollow out bar is 8mm, lbg area 9
Width is 40 microns, and the thickness of back side silicon nitride 3 is 200 microns, and the thickness of backside oxide aluminium film 4 is 9nm.
Embodiment three
The embodiment three and the difference of embodiment one that the present invention is provided with the PERC solar cells of hollow out bar are, implement
In example three, the two ends of hollow out bar 11 are from being 26mm with a distance from Al-BSF edge, and the width of hollow out bar is 12mm, lbg area 9
Width be 60 microns, the thickness of back side silicon nitride 3 is 250 microns, and the thickness of backside oxide aluminium film 4 is 16nm.
Example IV
The example IV and the difference of embodiment one that the present invention is provided with the PERC solar cells of hollow out bar are, implement
In example four, the two ends of hollow out bar 11 are from being 40mm with a distance from Al-BSF edge, and the width of hollow out bar is 16mm, lbg area 9
Width be 80 microns, the thickness of back side silicon nitride 3 is 300 microns, and the thickness of backside oxide aluminium film 4 is 23nm.
Embodiment five
The embodiment five and the difference of embodiment one that the present invention is provided with the PERC solar cells of hollow out bar are, implement
In example five, the two ends of hollow out bar 11 are from being 50mm with a distance from Al-BSF edge, and the width of hollow out bar is 20mm, lbg area 9
Width be 100 microns, the thickness of back side silicon nitride 3 is 80 microns, and the thickness of backside oxide aluminium film 4 is 30nm.
The above embodiment of the present invention is not limiting the scope of the present invention, and embodiments of the present invention are not limited to
This, all this kind, according to the ordinary technical knowledge and customary means of this area, is not departing from this according to the above of the present invention
Under the premise of inventing above-mentioned basic fundamental thought, the modification for the other diversified forms made to said structure of the present invention, replace or become
More, it all should fall within the scope and spirit of the invention.
Claims (7)
- Be provided with the PERC solar cells of hollow out bar 1. a kind of, including set gradually from bottom to top back of the body silver electrode, Al-BSF, the back of the body Face silicon nitride film, backside oxide aluminium film, P-type silicon, N-type silicon, front side silicon nitride film and positive silver electrode, the solar cell is in the back of the body Face is further opened with opening after the back side silicon nitride, backside oxide aluminium film the multi-stripe laser slotted zones until P-type silicon, a plurality of to swash Light slotted zones are be arranged in parallel, and filled with back of the body aluminum strip in each lbg area, the back of the body aluminum strip is used with described Al-BSF Aluminum slurry integrally printing shaping, Al-BSF is connected by carrying on the back aluminum strip with P-type silicon, it is characterised in that：The Al-BSF hollow out is opened up Have a plurality of continuous hollow out bar, a plurality of hollow out bar also be arranged in parallel, and parallel with lbg area, a plurality of hollow out bar with it is many Bar lbg area is distributed in alternate intervals shape.
- 2. the PERC solar cells as claimed in claim 1 for being provided with hollow out bar, it is characterised in that：The multi-stripe laser fluting The structure in area is identical, and the structure of a plurality of hollow out bar is also identical.
- 3. the PERC solar cells as claimed in claim 2 for being provided with hollow out bar, it is characterised in that：The two ends of the hollow out bar From being 5~50mm with a distance from Al-BSF edge, the width of hollow out bar is 5~20mm.
- 4. the PERC solar cells as claimed in claim 2 for being provided with hollow out bar, it is characterised in that：The lbg area Width is 20~100 microns.
- 5. the PERC solar cells as claimed in claim 2 for being provided with hollow out bar, it is characterised in that：The back side silicon nitride Thickness be 80~300 microns.
- 6. the PERC solar cells as claimed in claim 2 for being provided with hollow out bar, it is characterised in that：The backside oxide aluminium film Thickness be 2~30nm.
- 7. the preparation method of the PERC solar cells for being provided with hollow out bar as described in any one of claim 1 to 6, its feature exists In this method comprises the following steps：(1) matte is formed in front side of silicon wafer and the back side, the silicon chip is P-type silicon；(2) it is diffused to form N-type silicon in the front side of silicon wafer, i.e. N-type emitter stage；(3) PN junction of silicon chips periphery and the front phosphorosilicate glass of diffusion process formation are removed；(4) silicon chip back side is polished；(5) backside oxide aluminium film and back side silicon nitride are sequentially depositing in silicon chip back side；(6) in the front deposition front side silicon nitride film of N-type silicon；(7) lbg is carried out to silicon chip back side, opened after back side silicon nitride, backside oxide aluminium film until silicon chip, is formed many Bar lbg area；(8) back electrode slurry, drying are printed in the silicon chip back side；(9) aluminum slurry is printed in the silicon chip back side, forms Al-BSF, the Al-BSF hollow out forms a plurality of continuous hollow out bar, A plurality of hollow out bar is distributed with multi-stripe laser slotted zones in alternate intervals shape, is printed while Al-BSF is printed in lbg area Brush aluminum slurry, forms back of the body aluminum strip, integrally printing is molded back of the body aluminum strip with Al-BSF, is dried after printing；(10) in the front print positive electrode slurry of the front side silicon nitride film, drying；(11) high temperature sintering is carried out to silicon chip, forms back of the body silver electrode, Al-BSF and positive silver electrode；(12) anti-LID annealings are carried out to silicon chip, forms solar cell.
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| CN201710096967.8A CN107046078A (en) | 2017-02-22 | 2017-02-22 | It is a kind of to be provided with PERC solar cells of hollow out bar and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511536A (en) * | 2018-06-07 | 2018-09-07 | 通威太阳能（安徽）有限公司 | A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction |
| CN108630767A (en) * | 2018-05-28 | 2018-10-09 | 南京日托光伏科技股份有限公司 | A method of reduction MWT battery backplate area is hidden to be split |
| CN110212037A (en) * | 2019-04-17 | 2019-09-06 | 天津爱旭太阳能科技有限公司 | The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation |
| CN110491955A (en) * | 2018-09-30 | 2019-11-22 | 协鑫集成科技股份有限公司 | Solar battery and preparation method thereof |
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| CN110212037A (en) * | 2019-04-17 | 2019-09-06 | 天津爱旭太阳能科技有限公司 | The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation |
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