CN206947356U - P-type PERC double-sided solar batteries and its component, system - Google Patents
P-type PERC double-sided solar batteries and its component, system Download PDFInfo
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- CN206947356U CN206947356U CN201720200219.5U CN201720200219U CN206947356U CN 206947356 U CN206947356 U CN 206947356U CN 201720200219 U CN201720200219 U CN 201720200219U CN 206947356 U CN206947356 U CN 206947356U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a kind of p-type PERC double-sided solar batteries, include back of the body silver electrode, back of the body alum gate line, backside passivation layer, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode successively；Lbg area is formed by lbg to backside passivation layer, the back of the body alum gate line is connected by lbg area with P-type silicon；The lbg area includes multigroup horizontally arranged lbg unit, and each group of lbg unit includes one or more horizontally arranged lbg bodies, and the back of the body alum gate line is vertical with lbg body.Simple in construction using the utility model, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.
Description
Technical field
It the utility model is related to area of solar cell, more particularly to a kind of p-type PERC double-sided solar batteries and adopt
With the solar cell module of aforementioned p-type PERC double-sided solar batteries, using aforementioned p-type PERC double-sided solar batteries too
Positive energy system.
Background technology
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, and electricity is converted optical energy into using photovoltaic effect
Can device, when solar irradiation is in semiconductor P-N junction, form new hole-electron pair, it is empty in the presence of P-N junction electric field
Cave flows to P areas by N areas, and electronics flows to N areas by P areas, and electric current is just formed after connecting circuit.
Conventional crystalline silicon solar cell substantially only with front passivating technique, is sunk in front side of silicon wafer with PECVD mode
One layer of silicon nitride of product, recombination rate of few son on preceding surface is reduced, can significantly lift the open-circuit voltage of crystal silicon battery and short
Road electric current, so as to lift the photoelectric transformation efficiency of crystal silicon solar battery.But because the back side of silicon chip is not passivated, opto-electronic conversion
The lifting of efficiency nevertheless suffers from limitation.
The double-sided solar battery structure of prior art：Substrate uses N-type silicon chip, when solar photon irradiates cell backside
When, caused carrier passes through the silicon chip that thickness is about 200 microns in N-type silicon chip, because N-type silicon chip minority carrier life is high, carries
It is low to flow sub- recombination rate, part carrier can reach positive p-n junction；The front of solar cell is main smooth surface, its
The ratio that conversion efficiency accounts for whole battery conversion efficiency is very high；The comprehensive function at the positive back side, so as to greatly improve the conversion of battery
Efficiency.But N-type silicon chip price is high, N-type double-side cell complex process；Therefore, the two-sided sun of high efficiency, low cost how is developed
The focus that energy battery turns into enterprise and researcher pays close attention to.
On the other hand, as the requirement more and more higher of the photoelectric transformation efficiency to crystal silicon battery, industry are being studied always
PERC carries on the back passivating solar battery technology.Industry main flow producer mainly will in exploitation one side PERC solar cells, the utility model
PERC high-efficiency batteries and double-side cell combine, it is intended to the higher two-sided PERC solar-electricities of the comprehensive photoelectric transformation efficiency of exploitation
Pond.
For two-sided PERC solar cells, because photoelectric transformation efficiency is high, while two-sided absorption sunshine, generated energy is more
Height, there is bigger use value in actual applications.Therefore, the utility model be directed to a kind of technique is simple, cost compared with
The p-type PERC double-sided solar batteries low, easy to spread, photoelectric transformation efficiency is high.
Utility model content
Technical problem to be solved in the utility model is, there is provided a kind of p-type PERC double-sided solar batteries, structure letter
Single, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.
Technical problem to be solved in the utility model also resides in, there is provided a kind of p-type PERC double-sided solar battery components,
Simple in construction, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.
Technical problem to be solved in the utility model also resides in, there is provided a kind of p-type PERC double-sided solar systems, structure
Simply, cost is relatively low, easy to spread, photoelectric transformation efficiency is high.
In order to solve the above-mentioned technical problem, the utility model provides a kind of p-type PERC double-sided solar batteries, wraps successively
Include back of the body silver electrode, back of the body alum gate line, backside passivation layer, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；
Lbg area is formed by lbg to backside passivation layer, the back of the body alum gate line passes through lbg area and P
Type silicon is connected；
The lbg area includes multigroup horizontally arranged lbg unit, each group of lbg unit bag
One or more horizontally arranged lbg bodies are included, the back of the body alum gate line is vertical with lbg body.
As the preferred embodiment of such scheme, the lbg body is linear pattern；
It is to be arranged in parallel between the lbg unit；
In each lbg unit, for the lbg body to be set up in parallel, the lbg body is in same water
Stagger in plane or up and down.
As the preferred embodiment of such scheme, the spacing between the lbg unit is 0.5-50mm.
In each lbg unit, the spacing between the lbg body is 0.5-50mm.
The length of the lbg body is 50-5000 microns, and width is 10-500 microns.
As the preferred embodiment of such scheme, the radical of the back of the body alum gate line is 30-500 bars；
The width of the back of the body alum gate line is 30-500 microns, and the width of the back of the body alum gate line is less than the lbg body
Length.
As the preferred embodiment of such scheme, the backside passivation layer includes alumina layer and silicon nitride layer, the oxidation
Aluminium lamination is connected with P-type silicon, and the silicon nitride layer is connected with alumina layer；
The thickness of the silicon nitride layer is 20-500nm；
The thickness of the alumina layer is 2-50nm.
Accordingly, a kind of PERC solar cell modules, including PERC solar cells and envelope is also disclosed in the utility model
Package material, the PERC solar cells are any of the above-described p-type PERC double-sided solar batteries.
Accordingly, a kind of PERC solar energy systems, including PERC solar cells, the PERC is also disclosed in the utility model
Solar cell is any of the above-described p-type PERC double-sided solar batteries.
Implement the utility model, have the advantages that：
The utility model to backside passivation layer by lbg by after silicon chip back side forms backside passivation layer, being formed
Lbg area, aluminium paste is printed then along the vertical direction in laser scribing direction, aluminium paste is passed through slotted zones and P-type silicon phase
Even, obtain carrying on the back alum gate line.The two-sided PERC solar cells are used by preparing battery grid line structure in front side of silicon wafer and the back side
Different from the mode of conventional printing aluminium paste, because the width of alum gate is much smaller than the length in lbg area, it may not be necessary to aluminium
Slurry and lbg area implement accurate alignment, simplify laser technology and typography, reduce the difficulty of printing equipment debugging,
It is easy to the big production of industrialization.In addition, the lbg area beyond the aluminium paste area of coverage can increase battery back surface to sunshine
Absorb, improve the photoelectric transformation efficiency of battery.Therefore, the utility model is simple in construction, technique is simple, and cost is relatively low, is easy to push away
Extensively, photoelectric transformation efficiency is high.
Brief description of the drawings
Fig. 1 is a kind of sectional view of p-type PERC double-sided solar batteries of the utility model；
Fig. 2 is a kind of schematic diagram of the backside structure of p-type PERC double-sided solar batteries of the utility model；
Fig. 3 is a kind of schematic diagram of the embodiment of lbg area one of p-type PERC double-sided solar batteries of the utility model；
Fig. 4 is a kind of signal of another embodiment in lbg area of p-type PERC double-sided solar batteries of the utility model
Figure.
Embodiment
It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer
Type is described in further detail.
Existing one side solar cell is provided with the whole back side that full aluminum back electric field is covered in silicon chip at the back side of battery, entirely
The effect of aluminum back electric field is to improve open-circuit voltage Voc and short circuit current Jsc, forces minority carrier away from surface, Shao Shuozai
Flowing sub- recombination rate reduces, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, there is full aluminium
The rear surface of solar cell of back of the body electric field can not absorb luminous energy, positive can only absorb luminous energy, and the synthesis photoelectric transformation efficiency of battery is difficult
To be greatly improved.
For above-mentioned technical problem, with reference to Fig. 1, the utility model provides a kind of p-type PERC double-sided solar batteries, successively
Including back of the body silver electrode 1, back of the body alum gate line 2, backside passivation layer 3, P-type silicon 4, N-type emitter stage 5, front side silicon nitride film 6, positive silver electrode
7；Lbg area 8 is formed by lbg to backside passivation layer 3, the back of the body alum gate line 2 passes through lbg area 8 and p-type
Silicon 4 is connected.Positive silver electrode 7 includes positive silver electrode main grid 7A and positive silver electrode pair grid 7B.The backside passivation layer 3 includes aluminum oxide
Layer 31 and silicon nitride layer 32.
The utility model is improved to existing one side PERC solar cells, no longer provided with full aluminum back electric field, but
Become many back of the body alum gate lines 2, lbg area 8 is overleaf opened up using lbg technology on passivation layer 3, and carry on the back aluminium
Grid line 2 is printed in the lbg area 8 that these be arranged in parallel, so as to form localized contact, intensive parallel with P-type silicon 4
The back of the body alum gate line 2 of cloth, which can not only play, improves open-circuit voltage Voc and short circuit current Jsc, reduces minority carrier recombination rate, improves
The effect of cell photoelectric conversion efficiency, the full aluminum back electric field of alternative existing one side battery structure, and also it is incomplete to carry on the back alum gate line 2
Face covers the back side of silicon chip, and sunshine can be projected in silicon chip between back of the body alum gate line 2, so as to realize that silicon chip back side absorbs light
Energy, greatly improve the photoelectric transformation efficiency of battery.
As shown in Fig. 2 the lbg area 8 includes multigroup horizontally arranged lbg unit 81, each group
Lbg unit 81 includes one or more horizontally arranged lbg bodies 82, and the back of the body alum gate line 2 is opened with laser
Cell body 82 is vertical.Dotted line frame with reference to shown in Fig. 3,4, Fig. 3,4 is lbg unit 81, and each group of lbg unit 81 wraps
Include one or more horizontally arranged lbg bodies 82.
It should be noted that lbg unit 81 has numerous embodiments, including：
（1）Each group of lbg unit 81 includes a horizontally arranged lbg body 82, and now, laser is opened
Groove unit 81 is continuous straight line slotted zones, specific as shown in Figure 4.Multiple lbg units 81 arrange cloth along vertical direction
Put.
（2）Each group of lbg unit 81 includes multiple horizontally arranged lbg bodies 82, and now, laser is opened
Groove unit 81 is the discrete straight line slotted zones of line segment formula, specific as shown in Figure 3.The plurality of lbg body 82 can be two
It is individual, three, four or more, but not limited to this.Multiple lbg units 81 are along vertical direction arranged.
When each group of lbg unit 81 includes multiple horizontally arranged lbg bodies 82, it is divided into following
Several situations：
A, the width of multiple horizontally arranged lbg bodies 82, length and shape are just as, its size list
Position is micron level, and length can be 50-5000 microns, but not limited to this；It should be noted that the lbg body can be with
In same level, it can also stagger up and down（I.e. not in same level）On, the pattern that it is in staggered distribution is according to production
Depending on needing.
B, the width of multiple horizontally arranged lbg bodies 82, length and shape are just as, its size list
Position is millimeter rank, and length can be 5-600 millimeters, but not limited to this；It should be noted that the lbg body can be located
In in same level, can also stagger up and down（I.e. not in same level）On, its pattern being in staggered distribution is according to production need
Depending on wanting.
C, the width of multiple horizontally arranged lbg bodies 82, length and/or shape are different, and it can root
Design is combined according to production needs.It should be noted that the lbg body may be in same level, can also
Stagger up and down（I.e. not in same level）On, its pattern being in staggered distribution is depending on production needs.
As the utility model preferred embodiment, the lbg body is linear pattern, convenient processing, simplifies work
Skill, reduce production cost.The lbg body is it can also be provided that other shapes, such as shaped form, arc, waveform etc.,
Embodiments thereof is not limited to the utility model illustrated embodiment.The back of the body alum gate line can also be shaped form, arc, wave
Shape etc..
To be arranged in parallel between the lbg unit, in each lbg unit, the lbg body is simultaneously
Row are set, and can simplify production technology, are adapted to large-scale promotion application.
Spacing between the lbg unit is 0.5-50mm.In each lbg unit, the lbg
Spacing between body is 0.5-50mm.
The length of the lbg body 82 is 50-5000 microns, and width is 10-500 microns.Preferably, the laser
The length of fluting body 82 is 250-1200 microns, and width is 30-80 microns.
Length, width and the spacing of lbg unit and the radical and width of alum gate are to consider alum gate and p-type
Optimize on the basis of the contact area of silicon, the shading-area of alum gate and abundant collection electronics, it is therefore an objective to reduce as far as possible
The shading-area of back side alum gate, while the electric current output ensured, and then lift the overall photoelectric transformation efficiency of battery.
The radical of the back of the body alum gate line be 30-500 bars, and the width for carrying on the back alum gate line is 30-500 microns, the back of the body aluminium
The width of grid line is much smaller than the length of the lbg body.Preferably, the radical of the back of the body alum gate line is 80-220 bars, described
The width for carrying on the back alum gate line is 50-300 microns.
The width of the back of the body alum gate line is much smaller than the length of the lbg body, vertical with lbg body in alum gate
In the case of, the printing issues for carrying on the back alum gate line can be greatly facilitated.Need not accurately it be aligned, alum gate can fall in lbg
In area, laser technology and typography are simplified, the difficulty of printing equipment debugging is reduced, is easy to the big production of industrialization.
The utility model by lbg to backside passivation layer by forming lbg area, then along laser scribing
The vertical direction printing aluminium paste in direction, makes aluminium paste be connected by slotted zones with P-type silicon, obtains carrying on the back alum gate line.The PERC is two-sided too
Positive energy battery, can by the way of different from conventional printing aluminium paste by preparing battery grid line structure in front side of silicon wafer and the back side
Need not implement accurate alignment to aluminium paste and lbg area, technique is simple, is easy to the big production of industrialization.Alum gate is opened with laser
Cell body is parallel, and aluminium paste and lbg area need to implement accurate alignment, and the precision and repeatability to printing equipment require very high, into
Product rate is difficult to be controlled, and substandard products are more, causes the decline of average photoelectric transformation efficiency., can will be into using the utility model
Product rate is improved to 99.5%.
Further, the backside passivation layer 3 includes alumina layer 31 and silicon nitride layer 32, the alumina layer 31 and p-type
Silicon 4 is connected, and the silicon nitride layer 32 is connected with alumina layer 31；
The thickness of the silicon nitride layer 32 is 20-500nm；
The thickness of the alumina layer 31 is 2-50nm.
Preferably, the thickness of the silicon nitride layer 32 is 100-200nm；
The thickness of the alumina layer 31 is 5-30nm.
Accordingly, a kind of PERC solar cell modules, including PERC solar cells and envelope is also disclosed in the utility model
Package material, the PERC solar cells are any of the above-described p-type PERC double-sided solar batteries.Specifically, as PERC too
One embodiment of positive energy battery component, its height saturating safety glass, ethylene-vinyl acetate copolymer for being from top to bottom sequentially connected
EVA, PERC solar cell, ethylene-vinyl acetate copolymer EVA and high safety glass composition thoroughly.
Accordingly, a kind of PERC solar energy systems, including PERC solar cells, the PERC is also disclosed in the utility model
Solar cell is any of the above-described p-type PERC double-sided solar batteries.As a preferred embodiment of PERC solar energy systems,
Including PERC solar cells, batteries, charging-discharging controller inverter, AC power distribution cabinet/AC distribution panel and solar tracking control system.
Wherein, PERC solar energy systems can be provided with batteries, charging-discharging controller inverter, can not also set batteries, fill
Discharge controller inverter, those skilled in the art can be configured according to being actually needed.
It should be noted that in PERC solar cell modules, PERC solar energy systems, except the two-sided sun of p-type PERC
Part outside energy battery, is designed with reference to prior art.
Finally, it should be noted that above example is only illustrating the technical solution of the utility model rather than to this reality
With the limitation of novel protected scope, although being explained in detail with reference to preferred embodiment to the utility model, this area it is common
It will be appreciated by the skilled person that the technical solution of the utility model can be modified or equivalent substitution, without departing from this reality
With the spirit and scope of new technique scheme.
Claims (5)
1. a kind of p-type PERC double-sided solar batteries, it is characterised in that include back of the body silver electrode, back of the body alum gate line, passivating back successively
Layer, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；
Lbg area is formed by lbg to backside passivation layer, the back of the body alum gate line passes through lbg area and P-type silicon
It is connected；
The lbg area includes multigroup horizontally arranged lbg unit, and each group of lbg unit includes one
Individual or multiple horizontally arranged lbg bodies, the back of the body alum gate line are vertical with lbg body;
It is to be arranged in parallel between the lbg unit；
In each lbg unit, for the lbg body to be set up in parallel, the lbg body is in same level
Stagger above or up and down;
Spacing between the lbg unit is 0.5-50mm；
In each lbg unit, the spacing between the lbg body is 0.5-50mm；
The length of the lbg body is 50-5000 microns, and width is 10-500 microns.
2. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the radical of the back of the body alum gate line is 30-
500；
The width of the back of the body alum gate line is 30-500 microns, and the width of the back of the body alum gate line is less than the length of the lbg body
Degree.
3. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the backside passivation layer includes oxidation
Aluminium lamination and silicon nitride layer, the alumina layer are connected with P-type silicon, and the silicon nitride layer is connected with alumina layer；
The thickness of the silicon nitride layer is 20-500nm；
The thickness of the alumina layer is 2-50nm.
4. a kind of PERC solar cell modules, including PERC solar cells and encapsulating material, it is characterised in that the PERC
Solar cell is the p-type PERC double-sided solar batteries described in claim any one of 1-3.
5. a kind of PERC solar energy systems, including PERC solar cells, it is characterised in that the PERC solar cells are power
Profit requires the p-type PERC double-sided solar batteries described in any one of 1-3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720200219.5U CN206947356U (en) | 2017-03-03 | 2017-03-03 | P-type PERC double-sided solar batteries and its component, system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720200219.5U CN206947356U (en) | 2017-03-03 | 2017-03-03 | P-type PERC double-sided solar batteries and its component, system |
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| Publication Number | Publication Date |
|---|---|
| CN206947356U true CN206947356U (en) | 2018-01-30 |
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ID=61357829
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720200219.5U Active CN206947356U (en) | 2017-03-03 | 2017-03-03 | P-type PERC double-sided solar batteries and its component, system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638110A (en) * | 2018-12-18 | 2019-04-16 | 韩华新能源（启东）有限公司 | A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure |
| CN111446307A (en) * | 2020-04-09 | 2020-07-24 | 上海交通大学 | Laser grooving manufacturing method for maximizing conversion efficiency of solar cell |
-
2017
- 2017-03-03 CN CN201720200219.5U patent/CN206947356U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638110A (en) * | 2018-12-18 | 2019-04-16 | 韩华新能源（启东）有限公司 | A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure |
| CN111446307A (en) * | 2020-04-09 | 2020-07-24 | 上海交通大学 | Laser grooving manufacturing method for maximizing conversion efficiency of solar cell |
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