CN205984897U - Use high withstand voltage fast helping of chip of recovering and weld diode - Google Patents
Use high withstand voltage fast helping of chip of recovering and weld diode Download PDFInfo
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- CN205984897U CN205984897U CN201620911711.9U CN201620911711U CN205984897U CN 205984897 U CN205984897 U CN 205984897U CN 201620911711 U CN201620911711 U CN 201620911711U CN 205984897 U CN205984897 U CN 205984897U
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Abstract
The utility model discloses an use high withstand voltage fast helping of chip of recovering and weld diode, including packaging body and diode body, inside diode body placed the packaging body in, diode body included chip, metal contact and lead wire, and the metal contact is established respectively on the upper and lower surface of chip, and the left and right sides of chip is equipped with the pin respectively, the chip go up the below metal contact through the lead wire respectively with left and right sides pin electric connection, the pin afterbody extends to the outside of packaging body, the surface of pin afterbody is equipped with the rosin layer, the one end that the packaging body was kept away from on the rosin layer is equipped with the tin ingot, is equipped with the burr on the tin ingot. The beneficial effects of the utility model are that: adopt secondary diffusion technique, improve the alloy quality and the weldbility on surperficial ohmic contact layer, improved the resistance to pressure and the reliability of chip, the pin afterbody sets up rosin layer and tin ingot, can reduce the step at pin tin adding when being convenient for later stage welding diode, packaging body surface interpolation cooling layer avoids the diode to lead to owing to the high temperature damaging in long -time work.
Description
Technical field
This utility model is related to diode technologies field, and what more particularly to a kind of use high withstand voltage recovered chip soon helps weldering
Diode.
Background technology
The classification of diode has many kinds, and one of which is using the fast diode recovering chip, referred to as recovers two poles soon
Pipe.Fast recovery diode is the semiconductor device coming out in recent years, has that switching characteristic is good, and reverse recovery time is short, just
To electric current is big, small volume, simple installation the advantages of, be used for the electronic circuits such as Switching Power Supply, PWM pulse width modulator, converter
In, use as high-frequency rectification diode, fly-wheel diode or damper diode.However, when being used for high-frequency rectification diode, its
In rectification chip due to the particularity of its structure and technique, have the advantage and defect in its structure, according to diffusion principle, P+ type
Diffusion layer impurity can continue migration toward internal, affects metal conducting layer surface alloy effect, such metal conducting layer ohm connects
Touch bad, affect device electrical performance.And, the heating of the rising of operating ambient temperature and diode itself, also result in two poles
Pipe electrical property is unstable.Meanwhile, diode, in welding because the amalgamation of metal part is bad, is unfavorable for welding, thus affecting
The use of diode.
Content of the invention
In order to solve the problems, such as above-mentioned prior art, the purpose of this utility model is to provide one kind to use high withstand voltage
That recovers chip soon helps weldering diode, by adopting secondary diffusion technique, i.e. P-type diffusion layer and P+ when carrying out the matter diffusion of P area
Type diffusion layer, improves P area carrier valid density, improves alloy mass and the solderability of surface ohmic contact layer, meanwhile, both
Can guarantee that the electrical property of chip, chip short circuit can be prevented again, improve resistance to pressure and the reliability of chip；Pin tails are arranged
Colophony layer and block tin, are easy to reduce the step in pin plus stannum during later stage welding diode；Add fall on packaging body surface
Warm layer, it is to avoid diode leads to because temperature is too high damage in working long hours.
The technical solution adopted in the utility model is：What a kind of use high withstand voltage recovered chip soon helps weldering diode, including
Packaging body and diode body, described diode body is placed in package interior, and described diode body includes chip, metal touches
Point and lead, described hard contact is respectively provided at the upper and lower surface of chip, described chip be respectively arranged on the left side and the right side pin,
Lead is passed through in the upper metal contact of described chip and left side pin is electrically connected with, and the lower-lying metal contact of described chip is passed through to draw
Line and right side pin are electrically connected with, and described pin tails extend to the outside of packaging body, and the outer surface of described pin tails is provided with
Colophony layer, described colophony layer is provided with block tin away from one end of packaging body, and described block tin is provided with burr.
It is preferred that, described chip includes N+ type diffusion layer, N-type diffusion layer, P-type diffusion layer from top to bottom successively
With P+ type diffusion layer, the contact surface between described N-type diffusion layer and P-type diffusion layer is set to PN junction, the upper surface of described chip
The left and right sides open up fluted, the upper surface of chip is divided into first in the middle of chip by the groove of the described left and right sides
Step and set up second step in chip both sides of the edge separately, the upper surface of described second step is less than the upper table of first step
Face, described PN junction is exposed on the side wall of groove, on the side wall of the upper surface of described second step, the bottom of groove and groove all
It is provided with glass passivation layer.
It is preferred that, described chip be respectively arranged on the left side and the right side DAF film, described DAF film is set to high-temperature insulation
Film, the thickness of described DAF film is set to no more than 25 μm, and described pin is fixed on the left and right sides of chip by DAF film.
It is preferred that, the difference in height of the upper surface of described second step and the upper surface of first step be set to 10 μm-
30μm.
It is preferred that, the upper surface of first step and the lower surface of chip are equipped with metal conducting layer.
It is preferred that, the distance of described block tin and diode body is set to 4mm-4.5mm.
It is preferred that, described pin tails extend to packaging body exterior section and are set to flat.
It is preferred that, the end of described pin tails is tapered, is provided with screw thread at taper.
It is preferred that, described encapsulation external surface is provided with cooling layer, and its thickness is not more than 1mm.
The beneficial effects of the utility model are：
Adopt secondary diffusion technique when the 1st, spreading in P area, form the chip structure of four-layer structure, improve surface metal and lead
The alloy mass of electric layer, reduces contact resistance, improves solderability, increased effective-current area and P area carrier concentration,
Chip current density, pressure, power etc. all improve a lot；
2nd, because second step is less than first step and is provided with glass passivation layer on the upper surface of second step, second
At step, diced chip will not cause the hidden problem split and collapse angle to glass passivation layer, both can improve cutting speed, and might be used again
To prevent chip short circuit, and be conducive to assembling, improve resistance to pressure, reliability and the electrical property of chip.
3rd, colophony layer and block tin are set in pin tails, being easy to the later stage can reduce when welding diode in pin plus stannum
Step；
4th, add cooling layer on packaging body surface, it is to avoid diode leads to because temperature is too high damage in working long hours
Bad.
Brief description
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the structural representation of this utility model chip.
Wherein：
Packaging body -1 diode body -2 chip -3
Hard contact -4 pin -5 DAF film -6
Pin -7 colophony layer -8 block tin -9
Cooling layer -10 N+ type diffusion layer -31 N-type diffusion layer -32
P-type diffusion layer -33 P+ type diffusion layer -34 groove -35
First step -36 second step -37 glass passivation layer -38
Metal conducting layer -39 PN junction -40
Specific embodiment
With embodiment, the technical solution of the utility model is illustrated below in conjunction with the accompanying drawings.
Shown in seeing figures.1.and.2, what a kind of use high withstand voltage recovered chip soon helps weldering diode, including packaging body 1 and two
Pole pipe body 2, described diode body 2 is placed in inside packaging body 1, and described diode body 2 includes chip 3, hard contact 4 and
Lead 5, described hard contact 4 is respectively provided at the upper and lower surface of chip 3, described chip 3 be respectively arranged on the left side and the right side pin 7,
The upper metal contact 4 of described chip 3 passes through lead 5 and left side pin 7 is electrically connected with, the lower-lying metal contact 4 of described chip 3
It is electrically connected with by lead 5 and right side pin 7, described pin 7 afterbody extends to the outside of packaging body 1, described pin 7 afterbody
Outer surface is provided with colophony layer 8, and described colophony layer 8 is provided with block tin 9 away from one end of packaging body 1, and described block tin 9 is provided with burr.?
Pin 7 afterbody setting colophony layer 8 and block tin 9, are easy to reduce the step in pin 7 plus stannum during later stage welding diode.
Described chip 3 includes N+ type diffusion layer 31, N-type diffusion layer 32, P-type diffusion layer 33 and P+ type from top to bottom successively
Diffusion layer 34, the contact surface between described N-type diffusion layer 32 and P-type diffusion layer 33 is set to PN junction 40, the upper table of described chip 3
The left and right sides in face opens up fluted 35, and the upper surface of chip 3 is divided in chip 3 groove 35 of the described left and right sides
Between first step 36 and set up second step 37 in chip 3 both sides of the edge separately, the upper surface of described second step 37 is less than
The upper surface of first step 36, described PN junction 40 is exposed on the side wall of groove 35, the upper surface of described second step 37, groove
It is equipped with glass passivation layer 38 on the side wall of 35 bottom and groove 35.In chip 3 manufacturing process, carrying out the matter diffusion of P area
The secondary diffusion technique of Shi Caiyong, i.e. P-type diffusion layer 33 and P+ type diffusion layer 34, improve P area carrier valid density, improve
The alloy mass of surface ohmic contact layer and solderability, meanwhile, both can guarantee that the electrical property of chip 3, and chip 3 can be prevented short again
Road, improves resistance to pressure and the reliability of chip 3.
Described chip 3 be respectively arranged on the left side and the right side DAF film 6, described DAF film 6 is set to high-temperature insulation film, described DAF
The thickness of film 6 is set to no more than 25 μm, and described pin 7 is fixed on the left and right sides of chip 3 by DAF film 6.
The difference in height of the upper surface of the upper surface of described second step 37 and first step 36 is set to 10 μm -30 μm.
The lower surface of the upper surface of described first step 36 and chip 3 is equipped with metal conducting layer 39.
The distance of described block tin 9 and diode body 2 is set to 4mm-4.5mm, is easy to later stage welding.
Described pin 7 afterbody extends to packaging body 1 exterior section and is set to flat, is easy to later stage welding.
The end of described pin 7 afterbody is tapered, is provided with screw thread at taper, is easy to pin and is preferably welded on circuit board
On.
Described packaging body 1 outer surface is provided with cooling layer 10, and its thickness is not more than 1mm.Increased in the outer surface of packaging body 1
Cooling layer 10, can effectively reduce temperature during diode body 2 work, the reliability of lifting diode body 2.
Above-described embodiment is only that of the present utility model ultimate principle, principal character and advantage have been shown and described.The industry
Technical staff it should be appreciated that this utility model is not restricted to the described embodiments, described in above-described embodiment and description
Principle of the present utility model is simply described, on the premise of without departing from this utility model spirit and scope, this utility model also can
There are various changes and modifications, these changes and improvements both fall within the range of claimed this utility model.
Claims (9)
1. a kind of use high withstand voltage recover soon chip help weldering diode it is characterised in that：Including packaging body (1) and diode basis
Body (2), described diode body (2) is placed in packaging body (1) inside, and described diode body (2) includes chip (3), metal touches
Point (4) and lead (5), described hard contact (4) is respectively provided at the upper and lower surface of chip (3), the left and right two of described chip (3)
Side is respectively equipped with pin (7), and the upper metal contact (4) of described chip (3) passes through lead (5) and left side pin (7) electrically connects
Connect, the lower-lying metal contact (4) of described chip (3) passes through lead (5) and right side pin (7) is electrically connected with, described pin (7) tail
Portion extends to the outside of packaging body (1), and the outer surface of described pin (7) afterbody is provided with colophony layer (8), and described colophony layer (8) is remote
It is provided with block tin (9) from one end of packaging body (1), described block tin (9) is provided with burr.
2. a kind of use high withstand voltage according to claim 1 recover soon chip help weldering diode it is characterised in that：Described
Chip (3) includes N+ type diffusion layer (31), N-type diffusion layer (32), P-type diffusion layer (33) and P+ type diffusion from top to bottom successively
Layer (34), the contact surface between described N-type diffusion layer (32) and P-type diffusion layer (33) is set to PN junction (40), described chip (3)
The left and right sides of upper surface open up fluted (35), the upper surface of chip (3) is split by the groove (35) of the described left and right sides
It is first step (36) in the middle of the chip (3) and set up second step (37) in chip (3) both sides of the edge separately, described the
The upper surface of two steps (37) is less than the upper surface of first step (36), and described PN junction (40) is exposed to the side wall of groove (35)
On, the side wall of upper surface, the bottom of groove (35) and groove (35) of described second step (37) is equipped with glass passivation layer
(38).
3. a kind of use high withstand voltage according to claim 1 recover soon chip help weldering diode it is characterised in that：Described
Chip (3) be respectively arranged on the left side and the right side DAF film (6), described DAF film (6) is set to high-temperature insulation film, described DAF film (6)
Thickness is set to no more than 25 μm, and described pin (7) is fixed on the left and right sides of chip (3) by DAF film (6).
4. a kind of use high withstand voltage according to claim 2 recover soon chip help weldering diode it is characterised in that：Described
The difference in height of the upper surface of the upper surface of second step (37) and first step (36) is set to 10 μm -30 μm.
5. a kind of use high withstand voltage according to claim 2 recover soon chip help weldering diode it is characterised in that：First
The lower surface of the upper surface of step (36) and chip (3) is equipped with metal conducting layer (39).
6. a kind of use high withstand voltage according to claim 1 recover soon chip help weldering diode it is characterised in that：Described
The distance of block tin (9) and diode body (2) is set to 4mm-4.5mm.
7. a kind of use high withstand voltage according to claim 1 recover soon chip help weldering diode it is characterised in that：Described
Pin (7) afterbody extends to packaging body exterior section and is set to flat.
8. a kind of use high withstand voltage according to claim 1 recover soon chip help weldering diode it is characterised in that：Described
The end of pin (7) afterbody is tapered, is provided with screw thread at the end taper of described pin (7) afterbody.
9. a kind of use high withstand voltage according to claim 1 recover soon chip help weldering diode it is characterised in that：Described
Packaging body (1) outer surface is provided with cooling layer (10), and its thickness is not more than 1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620911711.9U CN205984897U (en) | 2016-08-19 | 2016-08-19 | Use high withstand voltage fast helping of chip of recovering and weld diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620911711.9U CN205984897U (en) | 2016-08-19 | 2016-08-19 | Use high withstand voltage fast helping of chip of recovering and weld diode |
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| Publication Number | Publication Date |
|---|---|
| CN205984897U true CN205984897U (en) | 2017-02-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195592A (en) * | 2017-07-06 | 2017-09-22 | 如皋市大昌电子有限公司 | A kind of fast recovery high-voltage tube |
-
2016
- 2016-08-19 CN CN201620911711.9U patent/CN205984897U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195592A (en) * | 2017-07-06 | 2017-09-22 | 如皋市大昌电子有限公司 | A kind of fast recovery high-voltage tube |
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