CN106449731A - A semiconductor rectifier diode - Google Patents
A semiconductor rectifier diode Download PDFInfo
- Publication number
- CN106449731A CN106449731A CN201610963220.3A CN201610963220A CN106449731A CN 106449731 A CN106449731 A CN 106449731A CN 201610963220 A CN201610963220 A CN 201610963220A CN 106449731 A CN106449731 A CN 106449731A
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- CN
- China
- Prior art keywords
- semiconductor layer
- area
- region electrode
- rectifier diode
- layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 80
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention discloses a semiconductor rectifier diode comprising a chip, an N-region electrode, an N-region lead, a P-region electrode and a P-region lead wire, wherein the chip comprises an N-region semiconductor layer, a P-region semiconductor layer and a PN junction formed between the N-region semiconductor layer and the P-region semiconductor layer; the N-region semiconductor layer includes a lightly doped N-region semiconductor layer and a heavily doped N-region semiconductor layer; and the heavily doped N-region semiconductor layer and the P-region semiconductor layer are formed through doping diffusion at the same side of the lightly doped N-region semiconductor layer. According to the rectifier diode of the invention, the N-region electrode and the P-region electrode are at the same side of the chip; the thickness of the chip is reduced; miniaturization of devices is realized; and simultaneously, the preparation technology process of a diode circuit is simplified.
Description
Technical field
The present invention relates to semiconductor rectifier device technical field, more particularly to a kind of commutation diode.
Background technology
Semiconductor rectifier diode is a kind of very universal electronic device of application.Commutation diode is used for turning alternating current
It is changed into galvanic semiconductor device.The most important characteristic of diode is exactly one direction electric conductivity.In circuit, electric current can only be from
The positive pole of diode is flowed into, and negative pole flows out.Generally it includes a PN junction, has positive pole and two terminals of negative pole.The carrier in P area
It is hole, the carrier in N area is electronics, in the certain barrier potential of P area and the interval formation of N.Applied voltage makes P area with respect to N area for just
Voltage when, barrier potential reduces, and produces storage carrier near barrier potential both sides, can be by high current, with low voltage drop, referred to as
Forward conduction state.If adding contrary voltage, increasing barrier potential, high backward voltage can be born, flows through the reverse leakage of very little
Stream, referred to as reverse blocking state.Commutation diode has obvious unilateral conduction.Commutation diode can use semiconductor Germanium or silicon
Etc. material manufacture.The breakdown voltage height of silicon rectifier diode, reverse leakage current is little, and high-temperature behavior is good.Usual high-power
Commutation diode all uses high purity single crystal silicon to manufacture.
Prior art commutation diode is generally from the both sides extraction electrode of chip so that diode product thickness is big,
Circuit Joining Technology complexity, is unfavorable for present increasingly enhanced device miniaturization demand.Chinese patent ZL201020522061.1
The commutation diode that a kind of extraction electrode is located at chip the same face is disclosed, commutation diode thickness is reduced, but forms PN
The area of section of knot is obviously reduced, and affects the electric property of diode.
Content of the invention
It is an object of the invention to provide a kind of semiconductor rectifier diode, diode chip for backlight unit thickness reduces, beneficial to device
Miniaturization.
For achieving the above object, the present invention adopts following technological means：
A kind of semiconductor rectifier diode, including：Chip, N region electrode, N area lead, P region electrode and P area lead, described
Chip includes：The PN junction for being formed between N area semiconductor layer, P area semiconductor layer, and N area semiconductor layer and P area semiconductor layer,
The N region electrode side is formed on N area semiconductor layer, opposite side connection N area lead, and the P region electrode side is formed in P area
On semiconductor layer, opposite side connection P area lead, N area semiconductor layer includes that N area semiconductor layer is lightly doped partly is led with heavy doping N area
Body layer, heavy doping N area semiconductor layer and P area semiconductor layer are diffuseed to form the semiconductor layer homonymy doping of N area is lightly doped, N area electricity
Pole is formed on heavy doping N area semiconductor layer, and PN junction is formed in and is lightly doped between N area semiconductor layer and P area semiconductor layer.
Preferably, P area semiconductor layer includes P area semiconductor layer and heavy doping P area semiconductor layer, P area electricity is lightly doped
Pole is formed on heavy doping P area semiconductor layer.
Preferably, the chip is silicon single crystal wafer.
Preferably, silicon single crystal wafer forming process includes：N type single crystal silicon piece is chosen as N semiconductor layer is lightly doped, in N
Type monocrystalline silicon piece side part diffusion N-type impurity, forms heavy doping N area semiconductor layer, in another portion of n type single crystal silicon piece homonymy
Divide diffusion p type impurity, form P area semiconductor layer.
Preferably, the N-type impurity is 5 valency elements, and the p type impurity is trivalent element.
Preferably, the N-type impurity is phosphorus, and the p type impurity is boron.
Preferably, insulating protective layer is formed between the heavy doping N region electrode and P region electrode.
Preferably, N area lead and P area lead are copper cash.
Preferably, in the side for not forming N region electrode and P region electrode of the chip, heat abstractor is directly formed.
Preferably, the N region electrode and P region electrode include metal nickel dam, and metallic nickel layer formation process is for being initially formed one
Layer nickel silicon alloy, re-forms layer of metal nickel.
With respect to prior art, the present invention has advantages below：
Commutation diode N region electrode of the present invention and P region electrode effectively reduce the thickness of diode in the homonymy of chip
Degree, advantageously forms the diode component of miniaturization, while simplify diode circuit preparation process, and the cutting of PN junction
Face area is not obviously reduced, and maintains the electric property of diode.
Description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention 1；
Fig. 2 is the structural representation of the embodiment of the present invention 2；
Fig. 3 is the structural representation of the embodiment of the present invention 3；
Fig. 4 is the structural representation of the embodiment of the present invention 4.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment is described further to the present invention, following examples are only limitted to the present invention
Explain, any restriction effect is not carried out to invention.
Embodiment 1
As shown in Figure 1, a kind of semiconductor rectifier diode, including：Chip 1, N region electrode 21, N area lead 31, P region electrode
22 and P area's leads 32, the chip 1 includes：N area semiconductor layer 11, P area semiconductor layer 12, and N area semiconductor layer 11 and P
The PN junction for being formed between area's semiconductor layer 12,21 side of N region electrode is formed on N area semiconductor layer 11, and opposite side connects N
Area's lead 31,22 side of P region electrode is formed on P area semiconductor layer 12, opposite side connection 32, N of lead area of P area quasiconductor
Floor 11 includes 111 semiconductor layer of N area to be lightly doped with semiconductor layer 112, heavy doping N area of heavy doping N area semiconductor layer 112 and P area
Semiconductor layer 12 be lightly doped 111 homonymy of N area semiconductor layer doping diffuse to form, N region electrode 21 is formed in heavy doping N area and partly leads
On body layer 112, PN junction is formed in and is lightly doped between N area semiconductor layer 111 and P area semiconductor layer 12, and N region electrode 21 is electric with P area
Silicon dioxide insulator protective layer 23 is formed between pole 22, prevents short-circuit leakage current between N region electrode 21 and P region electrode 22, is formed,
Increase anti-pressure ability.
The present embodiment, chip 1 is silicon single crystal wafer, chooses n type single crystal silicon piece as N semiconductor layer 111 is lightly doped, in N
Type monocrystalline silicon piece side part diffusion P elements, form heavy doping N area semiconductor layer 112, another in n type single crystal silicon piece homonymy
Part diffusion boron element, forms P area semiconductor layer 12.N area lead 31 and P area lead 32 are that copper cash, copper cash is welded as lead
Firmly, and low cost.N region electrode 21 and P region electrode 22 include metal nickel dam, and metallic nickel layer formation process is for being initially formed one
Layer nickel silicon alloy, is re-formed layer of metal nickel, is combined closely with silicon chip, forms good ohmic contact.
Embodiment 2
As shown in Figure 2, in the present embodiment, P area semiconductor layer 12 is formed and P area half is lightly doped through doping diffusion twice
Conductor layer 121 is formed on 122 on heavy doping P area semiconductor layer with heavy doping P area semiconductor layer 122, P region electrode 22, effectively
The carrier concentration of P area semiconductor layer 12 is improved, reduces the contact of Ohmic contact between P area semiconductor layer 12 and P region electrode 22
Resistance, improves commutation diode electric property.Remainder structure is same as Example 1.
Embodiment 3
As shown in Figure 3, in the present embodiment, in the side for not forming N region electrode 21 and P region electrode 22 of chip 1,
It is lightly doped on N semiconductor layer 111 and is sequentially depositing silicon insulating barrier 41, Ni thin metal layer 42 and then the 43 formation radiating of welding anaerobic copper sheet
Device 4, improves the heat dispersion of commutation diode, simplifies packaging technology flow process.Remainder structure is same as Example 1.
Embodiment 4
As shown in Figure 4, in the present embodiment, in the side for not forming N region electrode 21 and P region electrode 22 of chip 1,
It is lightly doped on N semiconductor layer 111 and is sequentially depositing silicon insulating barrier 41, Ni thin metal layer 42 and then the 43 formation radiating of welding anaerobic copper sheet
Device 4, improves the heat dispersion of commutation diode, simplifies packaging technology flow process.Remainder structure is same as Example 2.
Claims (10)
1. a kind of semiconductor rectifier diode, including：Chip, N region electrode, N area lead, P region electrode and P area lead, the core
Piece includes：The PN junction for being formed between N area semiconductor layer, P area semiconductor layer, and N area semiconductor layer and P area semiconductor layer, institute
State N region electrode side to be formed on N area semiconductor layer, opposite side connection N area lead, the P region electrode side is formed in P area half
In conductor layer, opposite side connection P area lead, it is characterised in that：N area semiconductor layer include to be lightly doped N area semiconductor layer with heavily doped
Miscellaneous N area semiconductor layer, heavy doping N area semiconductor layer is being lightly doped N area semiconductor layer homonymy doping divergent contour with P area semiconductor layer
Become, N region electrode is formed on heavy doping N area semiconductor layer, PN junction is formed in and N area semiconductor layer is lightly doped with P area semiconductor layer
Between.
2. semiconductor rectifier diode according to claim 1, it is characterised in that：P area semiconductor layer includes gently to mix
Miscellaneous P area semiconductor layer and heavy doping P area semiconductor layer, P region electrode is formed on heavy doping P area semiconductor layer.
3. semiconductor rectifier diode according to claim 1, it is characterised in that：The chip is silicon single crystal wafer.
4. semiconductor rectifier diode according to claim 3, it is characterised in that：Silicon single crystal wafer forming process includes：
N type single crystal silicon piece is chosen as N semiconductor layer is lightly doped, in n type single crystal silicon piece side part diffusion N-type impurity, form weight
Doping N area semiconductor layer, spreads p type impurity in n type single crystal silicon piece homonymy another part, forms P area semiconductor layer.
5. semiconductor rectifier diode according to claim 4, it is characterised in that：The N-type impurity is 5 valency elements, institute
P type impurity is stated for trivalent element.
6. the semiconductor rectifier diode according to claim 4 or 5, it is characterised in that：The N-type impurity is phosphorus, the P
Type impurity is boron.
7. semiconductor rectifier diode according to claim 1, it is characterised in that：The heavy doping N region electrode and P area electricity
Insulating protective layer is formed between pole.
8. semiconductor rectifier diode according to claim 1, it is characterised in that：N area lead and P area lead are copper
Line.
9. semiconductor rectifier diode according to claim 1, it is characterised in that：The chip do not formed N area electricity
The side of pole and P region electrode directly forms heat abstractor.
10. semiconductor rectifier diode according to claim 1, it is characterised in that：The N region electrode and P region electrode
Including metal nickel dam, metallic nickel layer formation process re-forms layer of metal nickel for being initially formed one layer of nickel silicon alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610963220.3A CN106449731A (en) | 2016-11-04 | 2016-11-04 | A semiconductor rectifier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610963220.3A CN106449731A (en) | 2016-11-04 | 2016-11-04 | A semiconductor rectifier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106449731A true CN106449731A (en) | 2017-02-22 |
Family
ID=58180427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610963220.3A Withdrawn CN106449731A (en) | 2016-11-04 | 2016-11-04 | A semiconductor rectifier diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106449731A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054216A (en) * | 2018-01-03 | 2018-05-18 | 东莞市阿甘半导体有限公司 | A kind of unilateral diode chip |
| CN110060965A (en) * | 2019-04-30 | 2019-07-26 | 苏州固锝电子股份有限公司 | Exempt to encapsulate diode and its processing technology |
| CN110137266A (en) * | 2019-04-30 | 2019-08-16 | 苏州固锝电子股份有限公司 | Novel free encapsulates diode and its processing technology |
| CN110137265A (en) * | 2019-04-30 | 2019-08-16 | 苏州固锝电子股份有限公司 | A kind of Novel free encapsulation diode and its processing technology |
| CN110137264A (en) * | 2019-04-30 | 2019-08-16 | 苏州固锝电子股份有限公司 | One kind is exempted to encapsulate diode and its processing technology |
| WO2020220666A1 (en) * | 2019-04-30 | 2020-11-05 | 苏州固锝电子股份有限公司 | Manufacturing process for diode chip having electrodes on same side and shallow trench |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916755A (en) * | 2010-09-03 | 2010-12-15 | 四川太晶微电子有限公司 | Plane rectifier |
| US20130037954A1 (en) * | 2004-03-16 | 2013-02-14 | Infineon Technologies Ag | Metallization and Its Use In, In Particular, an IGBT or a Diode |
| CN202977427U (en) * | 2012-10-24 | 2013-06-05 | 贵州煜立电子科技有限公司 | Constant current diode unit structure |
-
2016
- 2016-11-04 CN CN201610963220.3A patent/CN106449731A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130037954A1 (en) * | 2004-03-16 | 2013-02-14 | Infineon Technologies Ag | Metallization and Its Use In, In Particular, an IGBT or a Diode |
| CN101916755A (en) * | 2010-09-03 | 2010-12-15 | 四川太晶微电子有限公司 | Plane rectifier |
| CN202977427U (en) * | 2012-10-24 | 2013-06-05 | 贵州煜立电子科技有限公司 | Constant current diode unit structure |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054216A (en) * | 2018-01-03 | 2018-05-18 | 东莞市阿甘半导体有限公司 | A kind of unilateral diode chip |
| WO2019134596A1 (en) * | 2018-01-03 | 2019-07-11 | 马鞍山市槟城电子有限公司 | One-sided diode chip |
| CN110060965A (en) * | 2019-04-30 | 2019-07-26 | 苏州固锝电子股份有限公司 | Exempt to encapsulate diode and its processing technology |
| CN110137266A (en) * | 2019-04-30 | 2019-08-16 | 苏州固锝电子股份有限公司 | Novel free encapsulates diode and its processing technology |
| CN110137265A (en) * | 2019-04-30 | 2019-08-16 | 苏州固锝电子股份有限公司 | A kind of Novel free encapsulation diode and its processing technology |
| CN110137264A (en) * | 2019-04-30 | 2019-08-16 | 苏州固锝电子股份有限公司 | One kind is exempted to encapsulate diode and its processing technology |
| WO2020220666A1 (en) * | 2019-04-30 | 2020-11-05 | 苏州固锝电子股份有限公司 | Manufacturing process for diode chip having electrodes on same side and shallow trench |
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Application publication date: 20170222 |