CN205960964U - Supplementary centralized half -bridge of electric capacity / full -bridge series -parallel connection MMC is from voltage -sharing topology based on inequality constraint - Google Patents

Abstract

The utility model provides a supplementary centralized half -bridge of electric capacity / full -bridge series -parallel connection MMC is from voltage -sharing topology based on inequality constraint. Half -bridge / full -bridge series -parallel connection MMC is in the voltage -sharing topology, and half -bridge / full -bridge series -parallel connection MMC model and the auxiliary switch in the voltage -sharing auxiliary circuit passes through the auxiliary circuit take place electric contact, and auxiliary switch is closed, and both constitute supplementary centralized half -bridge of electric capacity / full -bridge series -parallel connection MMC is from voltage -sharing topology based on inequality constraint, and auxiliary switch opens, and the topoligical equivalence is half -bridge / full -bridge series -parallel connection MMC topology. Do not stressing under two kinds of topology difference's the condition that (i) (i) a mechanical switch can leave out K 6 among the auxiliary switch. This half -bridge / full -bridge series -parallel connection MMC has DC fault clamping ability from voltage -sharing topology, does not rely on special voltage -sharing control, can accomplish directly exchange the basis of energy conversion on, realize the equilibrium of submodule piece capacitance voltage spontaneously, can make with electric capacity appearance value, realization MMC's base frequency by corresponding reductions submodule piece triggering frequency simultaneously.

Description

The centralized half-bridge of auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC all presses certainly Topology

Technical field

The utility model is related to flexible transmission field and in particular to a kind of auxiliary capacitor based on inequality constraints is centralized Half-bridge/full-bridge series-parallel connection MMC is topological from all pressing.

Background technology

Modularization multi-level converter MMC is the developing direction of following HVDC Transmission Technology, and MMC adopts submodule (Sub- Module, SM) mode that cascades constructs converter valve, it is to avoid the direct series connection of big metering device, reduce conforming to device Require, simultaneously facilitate dilatation and redundant configuration.With the rising of level number, output waveform, close to sinusoidal, can effectively avoid low electricity The defect of flat VSC-HVDC.

Half-bridge/full-bridge series-parallel connection MMC is combined by half-bridge and full-bridge submodule, and half-bridge sub-modular structure is simple, low cost, Running wastage is little, and full-bridge submodule has DC Line Fault clamping ability.

Different from two level, three level VSC, the DC voltage of MMC is not supported by a bulky capacitor, but by one is Arrange separate suspension submodule capacitances in series to support.In order to ensure the waveform quality of AC voltage output and ensure module In each power semiconductor bear identical stress, support DC voltage also for more preferable, reduce alternate circulation it is necessary to protect Card submodule capacitor voltage is in the state of dynamic stability in the periodicity flowing of brachium pontis power.

All pressing algorithm based on the sequence of capacitance voltage sequence is to solve MMC Neutron module capacitance voltage equalization problem at present Main flow thinking, but also expose its some inherent shortcomings constantly.First, the realization of ranking function has to rely on electric capacity The Millisecond sampling of voltage, needs substantial amounts of sensor and optical-fibre channel to be coordinated；Secondly, group number of modules increases When, the operand of capacitance voltage sequence increases rapidly, is that the hardware design of controller brings huge challenge；Additionally, sequence is all pressed The realization of algorithm has very high requirement to the frequency of cut-offfing of submodule, cut-offs frequency and is closely related with voltage equalizing, was putting into practice Cheng Zhong, probably due to the restriction of voltage equalizing is it has to improve the triggering frequency of submodule, and then brings the increasing of transverter loss Plus.

Document " A DC-Link Voltage Self-Balance Method for a Diode-Clamped Modular Multilevel Converter With Minimum Number of Voltage Sensors " is it is proposed that one Plant and rely on clamp diode and transformer to realize MMC submodule capacitor voltage thinking in a balanced way.But the program in design Determine the modular nature that degree destroys submodule, submodule capacitive energy interchange channel is also confined in phase, could not be fully sharp With the existing structure of MMC, the introducing of three transformers also brings along larger being transformed into while so that control strategy is complicated This.

Utility model content

For the problems referred to above, the purpose of this utility model is to propose a kind of economy, modular, is independent of all pressing calculation Method, can accordingly reduce submodule simultaneously and trigger frequency and capacitor's capacity and have the half-bridge/full-bridge of DC Line Fault clamping ability and mix Connection MMC is topological from all pressing.

The specific constituted mode of the utility model is as follows.

The centralized half-bridge of auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC is topological from all pressing, including by A, B, C Three-phase constitute half-bridge MMC model, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual full-bridge submodule and 1 Individual brachium pontis reactor is in series；Including by 6NIndividual auxiliary switch（6KIndividual mechanical switch, 6N-6KIndividual IGBT module）, 6N+ 7 Clamp diode, 4 auxiliary capacitors, 2 auxiliary IGBT module composition from all press subsidiary loop.

Centralized half-bridge/full-bridge series-parallel connection the MMC of the above-mentioned auxiliary capacitor based on inequality constraints is from all pressing topology, bridge in A phase 1st submodule of arm, module I GBT module midpoint sub- with the 2nd of brachium pontis in A phase is connected its submodule electric capacity negative pole downwards Connect, its submodule IGBT module midpoint is connected with dc bus positive pole upwards；The of brachium pontis in A phaseiIndividual submodule, whereini Value be 2～K- 1, its submodule electric capacity negative pole downwards with brachium pontis in A phase thei+ 1 sub- module I GBT module midpoint is connected Connect, its submodule IGBT module midpoint upwards with brachium pontis in A phasei- 1 sub- module capacitance negative pole is connected；Brachium pontis in A phase ?KIndividual half-bridge submodule, its submodule electric capacity negative pole downwards with brachium pontis in A phase theKOne IGBT module of+1 submodule Midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis in A phaseK- 1 sub- module capacitance negative pole is connected；A The of brachium pontis in phasejIndividual submodule, whereinjValue beK+ 2～N- 1, one IGBT module midpoint of its submodule downwards with A phase Upper brachium pontisjOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards with brachium pontis in A phase ThejOne IGBT module midpoint of -1 submodule is connected；Brachium pontis in A phaseNIndividual submodule, one IGBT module of its submodule Midpoint is down through two brachium pontis reactorsL ₀Module I GBT module midpoint sub- with the 1st of brachium pontis under A phase is connected, another IGBT module midpoint upwards with brachium pontis in A phaseNOne IGBT module midpoint of -1 submodule is connected；Brachium pontis under A phase TheiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacity negative pole downwards with brachium pontis under A phase thei+ 1 submodule IGBT module midpoint is connected, its IGBT module midpoint upwards with brachium pontis under A phasei- 1 sub- module capacitance negative pole is connected；A The of brachium pontis under phaseKIndividual submodule, its submodule electric capacity negative pole downwards with brachium pontis under A phase theKOne IGBT of+1 submodule Module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis under A phaseK- 1 sub- module capacitance negative pole is connected Connect；Brachium pontis under A phasejIndividual submodule, whereinjValue beK+ 2～N- 1, one IGBT module midpoint of its submodule is downwards and A Brachium pontis under phasejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards with brachium pontis under A phase ThejOne IGBT module midpoint of -1 submodule is connected；Brachium pontis under A phaseNIndividual one IGBT module midpoint of submodule is downward Be connected with dc bus negative pole, another IGBT module midpoint upwards with brachium pontis under A phaseNOne IGBT of -1 submodule Module midpoint is connected.1st submodule of brachium pontis in B phase, its submodule capacitance cathode is connected with dc bus positive pole upwards Connect, its submodule IGBT module midpoint is connected with the 2nd sub- module capacitance positive pole of brachium pontis in B phase downwards；Brachium pontis in B phase TheiIndividual submodule, whereiniValue be 2～K- 1, its submodule capacitance cathode upwards with brachium pontis in B phasei- 1 submodule Block IGBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase thei+ 1 sub- module capacitance is just Pole is connected；The of brachium pontis in B phaseKIndividual submodule, its submodule capacitance cathode upwards with brachium pontis in B phaseK- 1 submodule Block IGBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase theKOne IGBT of+1 submodule Module midpoint is connected；The of brachium pontis in B phasejIndividual submodule, whereinjValue beK+ 2～N- 1, one IGBT of its submodule Module midpoint upwards with brachium pontis in B phasejOne IGBT module midpoint of -1 submodule is connected, another IGBT module midpoint Downwards with brachium pontis in B phase thejOne IGBT module midpoint of+1 submodule is connected；Brachium pontis in B phaseNIndividual submodule, its son One IGBT module midpoint of module upwards with brachium pontis in B phaseNOne IGBT module midpoint of -1 submodule is connected, another IGBT module midpoint is down through two brachium pontis reactorsL ₀It is connected with the 1st sub- module capacitance positive pole of brachium pontis under B phase；B phase The of lower brachium pontisiIndividual submodule, whereiniValue be 2～K- 1, its submodule capacitance cathode upwards with brachium pontis under B phasei- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase thei+ 1 submodule Block capacitance cathode is connected；The of brachium pontis under B phaseKIndividual submodule, its submodule capacitance cathode upwards with brachium pontis under B phaseK-1 Individual sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase theK+ 1 submodule one Individual IGBT module midpoint is connected；Brachium pontis under B phasejIndividual submodule, whereinjValue beK+ 2～N- 1, its submodule one IGBT module midpoint upwards with brachium pontis under B phasejOne IGBT module midpoint of -1 submodule is connected, another IGBT module Midpoint downwards with brachium pontis under B phase thejOne IGBT module midpoint of+1 submodule is connected；Brachium pontis under B phaseNIndividual submodule, One IGBT module midpoint of its submodule upwards with brachium pontis under B phaseNOne IGBT module midpoint of -1 submodule is connected, separately One IGBT module midpoint is connected with dc bus negative pole downwards.The connected mode of C phase upper and lower bridge arm submodule and A phase or B Consistent.

From all pressing in subsidiary loop, first auxiliary capacitor is in parallel by clamp diode with second auxiliary capacitor, the Two auxiliary capacitor positive poles connect first auxiliary capacitor negative pole connection clamp diode of auxiliary IGBT module and are incorporated to dc bus Positive pole；3rd auxiliary capacitor is in parallel by clamp diode with the 4th auxiliary capacitor, and the 3rd auxiliary capacitor negative pole connects Auxiliary the 4th auxiliary capacitor positive pole of IGBT module connects clamp diode and is incorporated to dc bus negative pole.Clamp diode, passes through Auxiliary switch connects the 1st sub- module capacitance and first auxiliary capacitor positive pole in brachium pontis in A phase；A is connected by auxiliary switch In brachium pontis in phaseiIndividual sub- module capacitance and thei+ 1 sub- module capacitance positive pole, whereiniValue be 1～N-1；By auxiliary Switch connects in A phase in brachium pontis theNThe 1st sub- module capacitance positive pole of individual sub- module capacitance and brachium pontis under A phase；By auxiliary switch Connect under A phase in brachium pontis theiIndividual sub- module capacitance and brachium pontis under A phasei+ 1 sub- module capacitance positive pole, whereiniValue be 1 ~N-1；Connect under A phase in brachium pontis the by auxiliary switchNIndividual sub- module capacitance and the 3rd auxiliary capacitor positive pole.Clamper two pole Pipe, connects the negative pole of the 1st sub- module capacitance and second auxiliary capacitor in brachium pontis in B phase by auxiliary switch；By auxiliary Switch connects in B phase in brachium pontis theiIndividual sub- module capacitance and theiThe negative pole of+1 sub- module capacitance, whereiniValue be 1～N-1；Connect in B phase in brachium pontis the by auxiliary switchNThe 1st sub- module capacitance of individual sub- module capacitance and brachium pontis under B phase negative Pole；Connect under B phase in brachium pontis the by auxiliary switchiIndividual sub- module capacitance and brachium pontis under B phasei+ 1 sub- module capacitance negative Pole, whereiniValue be 1～N-1；Connect under B phase in brachium pontis the by auxiliary switchNIndividual sub- module capacitance and the 4th auxiliary The negative pole of electric capacity.The annexation of C phase clamp diode is corresponding with the annexation of its submodule.

Brief description

Below in conjunction with the accompanying drawings the utility model is further illustrated.

Fig. 1 is the structural representation of half-bridge submodule；

Fig. 2 is the structural representation of full-bridge submodule；

Fig. 3 is that the centralized half-bridge of the auxiliary capacitor/full-bridge series-parallel connection MMC based on inequality constraints is topological from all pressing.

Specific embodiment

For of the present utility model performance and operation principle are expanded on further, below in conjunction with the composition side to utility model for the accompanying drawing Formula is specifically described with operation principle.But the half-bridge based on this principle/full-bridge series-parallel connection MMC is not limited to Fig. 3 from all pressure topologys.

With reference to Fig. 3, the centralized half-bridge of the auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC is topological from all pressing, including The half-bridge being made up of A, B, C three-phase/full-bridge series-parallel connection MMC model, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual full-bridge submodule and 1 brachium pontis reactor are in series；Including by 6NIndividual auxiliary switch（6KIndividual mechanical switch, 6N-6KIndividual IGBT module）, 6N+ 7 clamp diodes, 4 auxiliary capacitors, 2 auxiliary IGBT module composition from all press subsidiary loop.

In half-bridge/full-bridge series-parallel connection MMC model, the 1st submodule of brachium pontis, its submodule electric capacity in A phaseC _{au_1}Negative pole to Lower module I GBT module midpoint sub- with the 2nd of brachium pontis in A phase is connected, and its submodule IGBT module midpoint is female with direct current upwards Line positive pole is connected；The of brachium pontis in A phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacityC _{au_i} Negative pole The with brachium pontis in A phase downwardsi+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with A The of brachium pontis in phasei- 1 sub- module capacitanceC _{au_i-1}Negative pole is connected；The of brachium pontis in A phaseKIndividual half-bridge submodule, its submodule Block electric capacityC _{au_K} Negative pole downwards with brachium pontis in A phase theKOne IGBT module midpoint of+1 submodule is connected, its submodule IGBT module midpoint upwards with brachium pontis in A phaseK- 1 sub- module capacitanceC _{au_K-1}Negative pole is connected；The of brachium pontis in A phasej Individual submodule, whereinjValue beK+ 2～N- 1, one IGBT module midpoint of its submodule downwards with brachium pontis in A phase thej+ 1 One IGBT module midpoint of submodule is connected, another IGBT module midpoint upwards with brachium pontis in A phasej- 1 submodule One IGBT module midpoint is connected；Brachium pontis in A phaseNIndividual submodule, one IGBT module midpoint of its submodule is down through two Individual brachium pontis reactorL ₀Module I GBT module midpoint sub- with the 1st of brachium pontis under A phase is connected, another IGBT module midpoint to Upper with brachium pontis in A phase theNOne IGBT module midpoint of -1 submodule is connected；The of brachium pontis under A phaseiIndividual submodule, its IniValue be 2～K- 1, its submodule electric capacityC _{al_i} Negative pole downwards with brachium pontis under A phase theiIn+1 sub- module I GBT module Point is connected, its IGBT module midpoint upwards with brachium pontis under A phase thei- 1 sub- module capacitanceC _{al_i-1}Negative pole is connected；Under A phase The of brachium pontisKIndividual submodule, its submodule electric capacityC _{al_K} Negative pole downwards with brachium pontis under A phase theKOne IGBT of+1 submodule Module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis under A phaseK- 1 sub- module capacitanceC _{al_K-1}Negative pole It is connected；Brachium pontis under A phasejIndividual submodule, whereinjValue beK+ 2～N- 1, one IGBT module midpoint of its submodule to Lower the with brachium pontis under A phasejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards with A phase Lower brachium pontisjOne IGBT module midpoint of -1 submodule is connected；Brachium pontis under A phaseNIn individual one IGBT module of submodule Point is connected with dc bus negative pole downwards, another IGBT module midpoint upwards with brachium pontis under A phase theN- 1 submodule one Individual IGBT module midpoint is connected.1st submodule of brachium pontis, its submodule electric capacity in B phaseC _{bu_1}Positive pole is female with direct current upwards Line positive pole is connected, its submodule IGBT module midpoint the 2nd sub- module capacitance with brachium pontis in B phase downwardsC _{bu_2}Positive pole is connected Connect；The of brachium pontis in B phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacityC _{bu_i} Positive pole upwards with B phase on The of brachium pontisi- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase thei+ 1 sub- module capacitanceC _{bu_i+1}Positive pole is connected；The of brachium pontis in B phaseKIndividual submodule, its submodule electric capacityC _{bu_K} Positive pole to Upper with brachium pontis in B phase theK- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with B phase Upper brachium pontisKOne IGBT module midpoint of+1 submodule is connected；The of brachium pontis in B phasejIndividual submodule, whereinjValue ForK+ 2～N- 1, one IGBT module midpoint of its submodule upwards with brachium pontis in B phasejIn one IGBT module of -1 submodule Point is connected, another IGBT module midpoint downwards with brachium pontis in B phase thejOne IGBT module midpoint of+1 submodule is connected Connect；Brachium pontis in B phaseNIndividual submodule, one IGBT module midpoint upwards with brachium pontis in B phaseN- 1 submodule one IGBT module midpoint is connected, and another IGBT module midpoint is down through two brachium pontis reactorsL ₀With brachium pontis under B phase the 1st Submodule electric capacityC _{bl_1}Positive pole is connected；The of brachium pontis under B phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule Electric capacityC _{bl_i} Positive pole upwards with brachium pontis under B phasei- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module Midpoint downwards with brachium pontis under B phase thei+ 1 sub- module capacitanceC _{bl_i+1}Positive pole is connected；The of brachium pontis under B phaseKIndividual submodule, Its submodule electric capacityC _{bl_K} Positive pole upwards with brachium pontis under B phaseK- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase theKOne IGBT module midpoint of+1 submodule is connected；Brachium pontis under B phasejIndividual Submodule, whereinjValue beK+ 2～N- 1, one IGBT module midpoint upwards with brachium pontis under B phasej- 1 submodule one Individual IGBT module midpoint is connected, another IGBT module midpoint downwards with brachium pontis under B phase thej+ 1 sub- module I GBT mono- IGBT module midpoint is connected；Brachium pontis under B phaseNIndividual submodule, one IGBT module midpoint of its submodule upwards with bridge under B phase ArmNOne IGBT module midpoint of -1 submodule is connected, another IGBT module midpoint downwards with dc bus negative pole phase Connect.The connected mode of C phase upper and lower bridge arm submodule is consistent with A.

From all pressing in subsidiary loop, auxiliary capacitorC ₁With auxiliary capacitorC ₂In parallel, the auxiliary capacitor by clamp diodeC ₂Just Pole connects auxiliary IGBT moduleT ₁, auxiliary capacitorC ₁Negative pole connects clamp diode and is incorporated to dc bus positive pole；Auxiliary capacitorC ₃With Auxiliary capacitorC ₄In parallel, the auxiliary capacitor by clamp diodeC ₃Negative pole connects auxiliary IGBT moduleT ₂, auxiliary capacitorC ₄Positive pole is even Connect clamp diode and be incorporated to dc bus negative pole.Clamp diode, by auxiliary switchK _{au_12}Connect the 1st in brachium pontis in A phase Submodule electric capacityC _{au_1}With auxiliary capacitorC ₁Positive pole；By auxiliary switchK _{au_i2}、K _{au_（i+1）2}Connect in A phase in brachium pontis theiHeight Module capacitanceC _{au_i} Withi+ 1 sub- module capacitanceC _{au_i+1}Positive pole, whereiniValue be 1～K-1；By auxiliary switchK _{au_K2}、T _{au_K+1}Connect in A phase in brachium pontis theKIndividual sub- module capacitanceC _{au_K} WithK+ 1 sub- module capacitanceC _{au_K+1}Positive pole；Pass through Auxiliary switchT _{au_j} 、T _{au_j+1}Connect in A phase in brachium pontis thejIndividual sub- module capacitanceC _{au_j} Withj+ 1 sub- module capacitanceC _{au_j+1}'s Positive pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{au_N} 、K _{al_12}Connect in A phase in brachium pontis theNIndividual submodule electricity HoldC _{au_N} With the 1st sub- module capacitance of brachium pontis under A phaseC _{al_1}Positive pole；By auxiliary switchK _{al_i2}、K _{al_（i+1）2}Connect bridge under A phase In armiIndividual sub- module capacitanceC _{al_i} Withi+ 1 sub- module capacitanceC _{al_i+1}Positive pole, whereiniValue be 1～K-1；Logical Cross auxiliary switchK _{al_K2}、T _{al_K+1}Connect under A phase in brachium pontis theKIndividual sub- module capacitanceC _{al_K} WithK+ 1 sub- module capacitanceC _{al_K+1}Positive pole；By auxiliary switchT _{al_j} 、T _{al_j+1}Connect under A phase in brachium pontis thejIndividual sub- module capacitanceC _{al_j} Withj+ 1 son Module capacitanceC _{al_j+1}Positive pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{al_N} Connect under A phase in brachium pontis theN Individual sub- module capacitanceC _{al_N} With auxiliary capacitorC ₃Positive pole.Clamp diode, by auxiliary switchK _{bu_12}Connect in B phase in brachium pontis the 1 sub- module capacitanceC _{bu_1}With auxiliary capacitorC ₂Negative pole；By auxiliary switchK _{bu_i2}、K _{bu_（i+1）2}Connect in B phase in brachium pontis thei Individual sub- module capacitanceC _{bu_i} Withi+ 1 sub- module capacitanceC _{bu_i+1}Negative pole, whereiniValue be 1～K-1；By auxiliary switchK _{bu_K2}、T _{bu_K+1}Connect in B phase in brachium pontis theKIndividual sub- module capacitanceC _{bu_K} WithK+ 1 sub- module capacitanceC _{bu_K+1}Negative pole；Pass through Auxiliary switchT _{bu_j} 、T _{bu_j+1}Connect in B phase in brachium pontis thejIndividual sub- module capacitanceC _{bu_j} Withj+ 1 sub- module capacitanceC _{bu_j+1}Negative Pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{bu_N} 、K _{bl_12}Connect in B phase in brachium pontis theNIndividual sub- module capacitanceC _{bu_N} With the 1st sub- module capacitance in brachium pontis under B phaseC _{bl_1}Negative pole；By auxiliary switchK _{bl_i2}、K _{bl_（i+1）2}Connect bridge under B phase In armiIndividual sub- module capacitanceC _{bl_i} Withi+ 1 sub- module capacitanceC _{bl_i+1}Negative pole, whereiniValue be 1～K-1；Pass through Auxiliary switchK _{bl_K2}、T _{bl_K+1}Connect under B phase in brachium pontis theKIndividual sub- module capacitanceC _{bl_K} WithK+ 1 sub- module capacitanceC _{bl_K+1} Negative pole；By auxiliary switchT _{bl_j} 、T _{bl_j+1}Connect under B phase in brachium pontis thejIndividual sub- module capacitanceC _{bl_j} Withj+ 1 submodule electricity HoldC _{bl_j+1}Negative pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{bl_N} Connect under B phase in brachium pontis theNIndividual submodule Electric capacityC _{bl_N} With auxiliary capacitorC ₄Negative pole.The annexation of C phase clamp diode is consistent with A.

Under normal circumstances, from all pressure subsidiary loops 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Normally closed, whereiniValue be 1～K,jValue beK+ 1～N, in A phase First sub- module capacitance of brachium pontisC _{au_1}During bypass, now assist IGBT moduleT ₁Disconnect, submodule electric capacityC _{au_1}With auxiliary capacitorC ₁In parallel by clamp diode；Brachium pontis in A phaseiIndividual sub- module capacitanceC _{au_i} During bypass, whereiniValue be 2～N, submodule Block electric capacityC _{au_i} With submodule electric capacityC _{au_i-1}In parallel by clamp diode；First sub- module capacitance of brachium pontis under A phaseC _{al_1}Other Lu Shi, submodule electric capacityC _{al_1}By clamp diode, two brachium pontis reactorsL ₀With submodule electric capacityC _{au_N} In parallel；Bridge under A phase ArmiIndividual sub- module capacitanceC _{al_i} During bypass, whereiniValue be 2～N, submodule electric capacityC _{al_i} With submodule electric capacityC _{al_i-1} In parallel by clamp diode；Auxiliary IGBT moduleT ₂During closure, auxiliary capacitorC ₃By clamp diode and submodule electric capacityC _{al_N} In parallel.

Under normal circumstances, from all pressure subsidiary loops 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Normally closed, whereiniValue be 1～K,jValue beK+ 1～N, auxiliary IGBT moduleT ₁During closure, auxiliary capacitorC ₂With submodule electric capacityC _{bu_1}In parallel by clamp diode；Brachium pontis in B phaseiHeight Module capacitanceC _{bu_i} During bypass, whereiniValue be 1～N- 1, submodule electric capacityC _{bu_i} With submodule electric capacityC _{bu_i+1}By clamper Diodes in parallel；Brachium pontis in B phaseNIndividual sub- module capacitanceC _{bu_N} During bypass, submodule electric capacityC _{bu_N} By clamp diode, two Individual brachium pontis reactorL ₀With submodule electric capacityC _{bl_1}In parallel；Brachium pontis under B phaseiIndividual sub- module capacitanceC _{bl_i} During bypass, whereini's Value be 1～N- 1, submodule electric capacityC _{bl_i} With submodule electric capacityC _{bl_i+1}In parallel by clamp diode；Brachium pontis under B phaseNIndividual Submodule electric capacityC _{bl_N} During bypass, submodule electric capacityC _{bl_N} With auxiliary capacitorC ₄In parallel by clamp diode.Above-mentioned auxiliary IGBT ModuleT ₁Trigger consistent with " logical sum " of first submodule trigger of brachium pontis in A, C phase；Auxiliary IGBT moduleT ₂ Trigger and brachium pontis under B phaseNThe trigger of individual submodule is consistent.

During the conversion of orthogonal stream energy, each submodule replaces input, bypass, assists IGBT moduleT ₁、T ₂Alternately Closure, shutoff, between A, B phase upper and lower bridge arm, capacitance voltage, in the presence of clamp diode, meets lower column constraint：

Auxiliary capacitorC ₁、C ₂Between voltage, auxiliary capacitorC ₃、C ₄There is inequality constraints condition between voltage：

It follows that in half-bridge/full-bridge series-parallel connection MMC in the dynamic process completing the conversion of orthogonal stream energy, meeting following Constraints：

Between C, B phase upper and lower bridge arm, the constraints of the capacitance voltage constraints alternate with A, B is consistent.

Illustrated from above-mentioned, this half-bridge/full-bridge series-parallel connection MMC topology possesses submodule capacitor voltage and certainly equalizes energy Power.

Finally it should be noted that：Described embodiment is only some embodiments of the present application, rather than whole realities Apply example.Based on the embodiment in the application, those of ordinary skill in the art are obtained under the premise of not making creative work Every other embodiment, broadly fall into the application protection scope.

Claims (4)

1. the centralized half-bridge of the auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC from all press topology it is characterised in that：Bag Include the half-bridge/full-bridge series-parallel connection MMC model being made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual full-bridge submodule and 1 brachium pontis reactor are in series；Including by 6KIndividual auxiliary mechanical switch, 6N-6KIndividual auxiliary IGBT Module, 6N+ 7 clamp diodes, 4 auxiliary capacitorsC ₁、C ₂ 、C ₃、C ₄, 2 auxiliary IGBT moduleT ₁、T ₂Constitute is auxiliary from all pressing Help loop.

2. the centralized half-bridge/full-bridge series-parallel connection MMC of the auxiliary capacitor based on inequality constraints according to claim 1 is from all pressing Topology it is characterised in that：1st submodule of brachium pontis, its submodule electric capacity in A phaseC _{au_1}Negative pole downwards with brachium pontis in A phase 2nd sub- module I GBT module midpoint is connected, and its submodule IGBT module midpoint is connected with dc bus positive pole upwards； A The of brachium pontis in phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacityC _{au_i} Negative pole downwards with brachium pontis in A phase ?i+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis in A phasei-1 Individual sub- module capacitanceC _{au_i-1}Negative pole is connected；The of brachium pontis in A phaseKIndividual half-bridge submodule, its submodule electric capacityC _{au_K} Negative pole to Lower with brachium pontis in A phase theKOne IGBT module midpoint of+1 submodule is connected, its submodule IGBT module midpoint upwards with The of brachium pontis in A phaseK- 1 sub- module capacitanceC _{au_K-1}Negative pole is connected；The of brachium pontis in A phasejIndividual submodule, whereinjTake It is worth and beK+ 2～N- 1, one IGBT module midpoint of its submodule downwards with brachium pontis in A phase thejOne IGBT module of+1 submodule Midpoint is connected, another IGBT module midpoint upwards with brachium pontis in A phasejOne IGBT module midpoint phase of -1 submodule Connect；Brachium pontis in A phaseNIndividual submodule, one IGBT module midpoint of its submodule is down through two brachium pontis reactorsL ₀With A phase 1st sub- module I GBT module midpoint of lower brachium pontis is connected, another IGBT module midpoint upwards with brachium pontis in A phaseN- One IGBT module midpoint of 1 submodule is connected；The of brachium pontis under A phaseiIndividual submodule, whereiniValue be 2～K- 1, its Submodule electric capacityC _{al_i} Negative pole downwards with brachium pontis under A phase thei+ 1 sub- module I GBT module midpoint is connected, in its IGBT module Point upwards with brachium pontis under A phase thei- 1 sub- module capacitanceC _{al_i-1}Negative pole is connected；The of brachium pontis under A phaseKIndividual submodule, its son Module capacitanceC _{al_K} Negative pole downwards with brachium pontis under A phase theKOne IGBT module midpoint of+1 submodule is connected, its submodule IGBT module midpoint upwards with brachium pontis under A phaseK- 1 sub- module capacitanceC _{al_K-1}Negative pole is connected；Brachium pontis under A phasejHeight Module, whereinjValue beK+ 2～N- 1, one IGBT module midpoint of its submodule downwards with brachium pontis under A phase thej+ 1 submodule One IGBT module midpoint of block is connected, another IGBT module midpoint upwards with brachium pontis under A phasej- 1 submodule one IGBT module midpoint is connected；Brachium pontis under A phaseNIndividual one IGBT module midpoint of submodule is connected with dc bus negative pole downwards Connect, another IGBT module midpoint upwards with brachium pontis under A phaseNOne IGBT module midpoint of -1 submodule is connected；B phase 1st submodule of upper brachium pontis, its submodule electric capacityC _{bu_1}Positive pole is connected with dc bus positive pole upwards, its submodule IGBT Module midpoint the 2nd sub- module capacitance with brachium pontis in B phase downwardsC _{bu_2}Positive pole is connected；The of brachium pontis in B phaseiIndividual submodule Block, whereiniValue be 2～K- 1, its submodule electric capacityC _{bu_i} Positive pole upwards with brachium pontis in B phasei- 1 sub- module I GBT Module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase thei+ 1 sub- module capacitanceC _{bu_i+1}Just Pole is connected；The of brachium pontis in B phaseKIndividual submodule, its submodule electric capacityC _{bu_K} Positive pole upwards with brachium pontis in B phaseK- 1 Submodule IGBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase theK+ 1 submodule one IGBT module midpoint is connected；The of brachium pontis in B phasejIndividual submodule, whereinjValue beK+ 2～N- 1, its submodule one IGBT module midpoint upwards with brachium pontis in B phasejOne IGBT module midpoint of -1 submodule is connected, another IGBT module Midpoint downwards with brachium pontis in B phase thejOne IGBT module midpoint of+1 submodule is connected；Brachium pontis in B phaseNIndividual submodule, One IGBT module midpoint upwards with brachium pontis in B phaseNOne IGBT module midpoint of -1 submodule is connected, another IGBT module midpoint is down through two brachium pontis reactorsL ₀The 1st sub- module capacitance with brachium pontis under B phaseC _{bl_1}Positive pole is connected；B The of brachium pontis under phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacityC _{bl_i} Positive pole upwards with brachium pontis under B phase ?i- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase thei+1 Individual sub- module capacitanceC _{bl_i+1}Positive pole is connected；The of brachium pontis under B phaseKIndividual submodule, its submodule electric capacityC _{bl_K} Positive pole upwards with Brachium pontis under B phaseK- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase TheKOne IGBT module midpoint of+1 submodule is connected；Brachium pontis under B phasejIndividual submodule, whereinjValue beK+ 2～N- 1, one IGBT module midpoint upwards with brachium pontis under B phasejOne IGBT module midpoint of -1 submodule is connected, another IGBT module midpoint downwards with brachium pontis under B phase thej+ 1 sub- mono- IGBT module midpoint of module I GBT is connected；Brachium pontis under B phase TheNIndividual submodule, one IGBT module midpoint of its submodule upwards with brachium pontis under B phaseNOne IGBT module of -1 submodule Midpoint is connected, and another IGBT module midpoint is connected with dc bus negative pole downwards；The connection of C phase upper and lower bridge arm submodule Mode can consistent with A it is also possible to consistent with B；Due to the presence of full-bridge submodule, the upper and lower output line of half-bridge submodule it Between unnecessary configuration IGCT；Therefore it is parallel with mechanical switch between the output line up and down of A, B, C phase upper and lower bridge arm submoduleK _{au_i1}、K _{al_i1}、K _{bu_i1}、K _{bl_i1}、K _{cu_i1}、K _{cl_i1}、K _{au_j} 、K _{al_j} 、K _{bu_j} 、K _{bl_j} 、K _{cu_j} 、K _{cl_j} , whereiniValue be 1～K,j's Value isK+ 1～N；A, B, C three-phase status that above-mentioned annexation is constituted is consistent.

3. the centralized half-bridge/full-bridge series-parallel connection MMC of the auxiliary capacitor based on inequality constraints according to claim 1 is from all pressing Topology it is characterised in that：From all pressing in subsidiary loop, auxiliary capacitorC ₁With auxiliary capacitorC ₂In parallel by clamp diode, auxiliary Electric capacityC ₂Positive pole connects auxiliary IGBT moduleT ₁, auxiliary capacitorC ₁Negative pole connects clamp diode and is incorporated to dc bus positive pole；Auxiliary Electric capacityC ₃With auxiliary capacitorC ₄In parallel, the auxiliary capacitor by clamp diodeC ₃Negative pole connects auxiliary IGBT moduleT ₂, auxiliary capacitorC ₄Positive pole connects clamp diode and is incorporated to dc bus negative pole；Clamp diode, by auxiliary switchK _{au_12}Connect brachium pontis in A phase In the 1st sub- module capacitanceC _{au_1}With auxiliary capacitorC ₁Positive pole；By auxiliary switchK _{au_i2}、K _{au_（i+1）2}Connect in brachium pontis in A phase TheiIndividual sub- module capacitanceC _{au_i} Withi+ 1 sub- module capacitanceC _{au_i+1}Positive pole, whereiniValue be 1～K-1；By auxiliary Help switchK _{au_K2}、T _{au_K+1}Connect in A phase in brachium pontis theKIndividual sub- module capacitanceC _{au_K} WithK+ 1 sub- module capacitanceC _{au_K+1}Just Pole；By auxiliary switchT _{au_j} 、T _{au_j+1}Connect in A phase in brachium pontis thejIndividual sub- module capacitanceC _{au_j} Withj+ 1 sub- module capacitanceC _{au_j+1}Positive pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{au_N} 、K _{al_12}Connect in A phase in brachium pontis theNHeight Module capacitanceC _{au_N} With the 1st sub- module capacitance of brachium pontis under A phaseC _{al_1}Positive pole；By auxiliary switchK _{al_i2}、K _{al_（i+1）2}Connect A In brachium pontis under phaseiIndividual sub- module capacitanceC _{al_i} Withi+ 1 sub- module capacitanceC _{al_i+1}Positive pole, whereiniValue be 1～K-1；By auxiliary switchK _{al_K2}、T _{al_K+1}Connect under A phase in brachium pontis theKIndividual sub- module capacitanceC _{al_K} WithK+ 1 submodule electricity HoldC _{al_K+1}Positive pole；By auxiliary switchT _{al_j} 、T _{al_j+1}Connect under A phase in brachium pontis thejIndividual sub- module capacitanceC _{al_j} Withj+ 1 Submodule electric capacityC _{al_j+1}Positive pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{al_N} Connect under A phase in brachium pontis theNIndividual sub- module capacitanceC _{al_N} With auxiliary capacitorC ₃Positive pole；Clamp diode, by auxiliary switchK _{bu_12}Connect in brachium pontis in B phase 1st sub- module capacitanceC _{bu_1}With auxiliary capacitorC ₂Negative pole；By auxiliary switchK _{bu_i2}、K _{bu_（i+1）2}Connect in B phase in brachium pontis theiIndividual sub- module capacitanceC _{bu_i} Withi+ 1 sub- module capacitanceC _{bu_i+1}Negative pole, whereiniValue be 1～K-1；Opened by auxiliary CloseK _{bu_K2}、T _{bu_K+1}Connect in B phase in brachium pontis theKIndividual sub- module capacitanceC _{bu_K} WithK+ 1 sub- module capacitanceC _{bu_K+1}Negative pole；Logical Cross auxiliary switchT _{bu_j} 、T _{bu_j+1}Connect in B phase in brachium pontis thejIndividual sub- module capacitanceC _{bu_j} Withj+ 1 sub- module capacitanceC _{bu_j+1} Negative pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{bu_N} 、K _{bl_12}Connect in B phase in brachium pontis theNIndividual submodule electricity HoldC _{bu_N} With the 1st sub- module capacitance in brachium pontis under B phaseC _{bl_1}Negative pole；By auxiliary switchK _{bl_i2}、K _{bl_（i+1）2}Connect under B phase In brachium pontisiIndividual sub- module capacitanceC _{bl_i} Withi+ 1 sub- module capacitanceC _{bl_i+1}Negative pole, whereiniValue be 1～K-1；Logical Cross auxiliary switchK _{bl_K2}、T _{bl_K+1}Connect under B phase in brachium pontis theKIndividual sub- module capacitanceC _{bl_K} WithK+ 1 sub- module capacitanceC _{bl_K+1}Negative pole；By auxiliary switchT _{bl_j} 、T _{bl_j+1}Connect under B phase in brachium pontis thejIndividual sub- module capacitanceC _{bl_j} Withj+ 1 son Module capacitanceC _{bl_j+1}Negative pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{bl_N} Connect under B phase in brachium pontis theNIndividual Submodule electric capacityC _{bl_N} With auxiliary capacitorC ₄Negative pole；The annexation of C phase clamp diode is relative with the annexation of its submodule Should；6 in above-mentioned A, B, C three-phaseNIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} , whereiniValue be 1～K,jValue beK+ 1～N, 6N+ 7 clamp diodes, 4 auxiliary capacitorsC ₁、C ₂、C ₃、C ₄And 2 auxiliary IGBT moduleT ₁、T ₂, collectively form from all pressure subsidiary loops.

4. the centralized half-bridge/full-bridge series-parallel connection MMC of the auxiliary capacitor based on inequality constraints according to claim 1 is from all pressing Topology it is characterised in that：During normal condition, from all pressure subsidiary loops 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Normally closed, whereiniValue be 1～K,jValue beK+ 1～N； During failure condition, 6N-6KIndividual auxiliary switchT _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Disconnect, whereinjValue beK+ 1～N；Under normal circumstances, first sub- module capacitance of brachium pontis in A phaseC _{au_1}During bypass, now assist IGBT moduleT ₁Disconnect, submodule Electric capacityC _{au_1}With auxiliary capacitorC ₁In parallel by clamp diode；Brachium pontis in A phaseiIndividual sub- module capacitanceC _{au_i} During bypass, whereiniValue be 2～N, submodule electric capacityC _{au_i} With submodule electric capacityC _{au_i-1}In parallel by clamp diode；Brachium pontis first under A phase Individual sub- module capacitanceC _{al_1}During bypass, submodule electric capacityC _{al_1}By clamp diode, two brachium pontis reactorsL ₀With submodule electricity HoldC _{au_N} In parallel；Brachium pontis under A phaseiIndividual sub- module capacitanceC _{al_i} During bypass, whereiniValue be 2～N, submodule electric capacityC _{al_i} With submodule electric capacityC _{al_i-1}In parallel by clamp diode；Auxiliary IGBT moduleT ₂During closure, auxiliary capacitorC ₃By clamper two Pole pipe and submodule electric capacityC _{al_N} In parallel；Auxiliary IGBT moduleT ₁During closure, auxiliary capacitorC ₂With submodule electric capacityC _{bu_1}By pincers Position diodes in parallel；Brachium pontis in B phaseiIndividual sub- module capacitanceC _{bu_i} During bypass, whereiniValue be 1～N- 1, submodule electricity HoldC _{bu_i} With submodule electric capacityC _{bu_i+1}In parallel by clamp diode；Brachium pontis in B phaseNIndividual sub- module capacitanceC _{bu_N} During bypass, Submodule electric capacityC _{bu_N} By clamp diode, two brachium pontis reactorsL ₀With submodule electric capacityC _{bl_1}In parallel；Brachium pontis under B phasei Individual sub- module capacitanceC _{bl_i} During bypass, whereiniValue be 1～N- 1, submodule electric capacityC _{bl_i} With submodule electric capacityC _{bl_i+1}Pass through Clamp diode is in parallel；Brachium pontis under B phaseNIndividual sub- module capacitanceC _{bl_N} During bypass, submodule electric capacityC _{bl_N} With auxiliary capacitorC ₄Logical Cross clamp diode in parallel；Wherein assist IGBT moduleT ₁Trigger and first submodule of brachium pontis in A, C phase triggering letter Number " logical sum " consistent；Auxiliary IGBT moduleT ₂Trigger and brachium pontis under B phaseNThe trigger one of individual submodule Cause；During the conversion of orthogonal stream energy, each submodule replaces input, bypass, assists IGBT moduleT ₁、T ₂Be alternately closed, Turn off, A phase upper and lower bridge arm submodule capacitor voltage, in the presence of clamp diode, meets lower column constraint,U _C1≥U _{Cau_1}≥U _{Cau_2}…≥U _{Cau_N} ≥U _{Cal_1}≥U _{Cal_2}…≥U _{Cal_N} ≥U _C3；B phase upper and lower bridge arm submodule capacitor voltage is in clamp diode In the presence of, meet lower column constraint,U _C2≤U _{Cbu_1}≤U _{Cbu_2}…≤U _{Cbu_N} ≤U _{Cbl_1}≤U _{Cbl_2}…≤U _{Cbl_N} ≤U _C4；Rely on Auxiliary capacitorC ₁、C ₂Between voltage, auxiliary capacitorC ₃、C ₄Two inequality constraints between voltage,U _C1≤U _C2,U _C3≥U _C4, 4 in A, B phase upper and lower bridge armNIndividual sub- module capacitance,C _{au_i} 、C_{al_i} 、C _{bu_i} 、C _{bl_i} , whereiniValue be 1～N, and auxiliary capacitorC ₁、C ₂、C ₃、C ₄, voltage be in self-balancing state, topological A, B are alternate to possess submodule capacitor voltage from the ability of equalization；If opening up The form of the composition flutterring middle C phase is consistent with A, then capacitance voltage constraint bar between the constraints of C, B capacitive coupling voltage and A, B Part is consistent；If the form of the composition of C phase is consistent with B in topology, electricity between the constraints of A, C capacitive coupling voltage and A, B Hold voltage constraints consistent.