CN205960963U - Supplementary electric capacity distributing type half -bridge / single clamp series -parallel connection MMC is from voltage -sharing topology based on equality constraint - Google Patents

Abstract

The utility model provides a supplementary electric capacity distributing type half -bridge / single clamp series -parallel connection MMC is from voltage -sharing topology based on equality constraint. Half -bridge / single clamp series -parallel connection MMC in the voltage -sharing topology, half -bridge / single clamp series -parallel connection MMC model with in the voltage -sharing auxiliary circuit passes through the auxiliary circuit 6 (i) (i) electric contact takes place to N for auxiliary switch, and auxiliary switch is closed, and both constitute supplementary electric capacity distributing type half -bridge / single clamp series -parallel connection MMC is from voltage -sharing topology based on equality constraint, and auxiliary switch opens, and it is topological that the topoligical equivalence be half -bridge / single clamp series -parallel connection MMC. Do not stressing under two kinds of topology difference's the condition that (i) (i) a mechanical switch can leave out K 6 among the auxiliary switch. This half -bridge / single clamp series -parallel connection MMC is from voltage -sharing topology, can clamp direct current side trouble, do not rely on special voltage -sharing control simultaneously, can accomplish directly exchange the basis of energy conversion on, realize the equilibrium of submodule piece capacitance voltage spontaneously, can make with electric capacity appearance value, realization MMC's base frequency by corresponding reductions submodule piece triggering frequency in addition.

Description

The distributed half-bridge of auxiliary capacitor based on equality constraint/mono- clamp series-parallel connection MMC all presses certainly Topology

Technical field

The utility model is related to flexible transmission field and in particular to a kind of auxiliary capacitor distributed semi based on equality constraint Bridge/mono- clamp series-parallel connection MMC is topological from all pressing.

Background technology

Modularization multi-level converter MMC is the developing direction of following HVDC Transmission Technology, and MMC adopts submodule (Sub- Module, SM) mode that cascades constructs converter valve, it is to avoid the direct series connection of big metering device, reduce conforming to device Require, simultaneously facilitate dilatation and redundant configuration.With the rising of level number, output waveform, close to sinusoidal, can effectively avoid low electricity The defect of flat VSC-HVDC.

Half-bridge/mono- clamp series-parallel connection MMC is combined by half-bridge submodule and single clamp submodule.Half-bridge submodule is by 2 IGBT module, 1 sub- module capacitance, 1 IGCT and 1 mechanical switch are constituted；Single clamp submodule by 3 IGBT module, 1 Individual sub- module capacitance, a diode and 1 mechanical switch are constituted.This series-parallel connection MMC, low cost, running wastage is little, simultaneously can pincers Position DC side fault.

Different from two level, three level VSC, the DC voltage of half-bridge/mono- clamp series-parallel connection MMC is not by a bulky capacitor Support, but supported by a series of separate suspension submodule capacitances in series.In order to ensure the ripple of AC voltage output In form quality amount and guarantee module, each power semiconductor bears identical stress, supports DC voltage also for more preferable, subtracts Little alternate circulation, it is necessary to assure submodule capacitor voltage is in the state of dynamic stability in the periodicity flowing of brachium pontis power.

All pressing algorithm based on the sequence of capacitance voltage sequence is to solve half-bridge/mono- clamp series-parallel connection MMC Neutron module electricity at present Hold the main flow thinking of electric voltage equalization problem.But, the realization of ranking function has to rely on the Millisecond sampling of capacitance voltage, needs Substantial amounts of sensor and optical-fibre channel are coordinated；Secondly, when group number of modules increases, the operand of capacitance voltage sequence Rapid increase, is that the hardware design of controller brings huge challenge；Additionally, sequence all presses the realization of algorithm that submodule is cut-off Frequency has very high requirement, cut-offs frequency and is closely related with voltage equalizing, in practice process, probably due to the limit of voltage equalizing System is it has to improve the triggering frequency of submodule, and then brings the increase of transverter loss.

Document " A DC-Link Voltage Self-Balance Method for a Diode-Clamped Modular Multilevel Converter With Minimum Number of Voltage Sensors " is it is proposed that one Plant and rely on clamp diode and transformer to realize MMC submodule capacitor voltage thinking in a balanced way.But the program in design Determine the modular nature that degree destroys submodule, submodule capacitive energy interchange channel is also confined in phase, could not be fully sharp With the existing structure of MMC, the introducing of three transformers also brings along larger being transformed into while so that control strategy is complicated This.

Utility model content

For the problems referred to above, the purpose of this utility model is to propose a kind of economy, modular, is independent of all pressing calculation Method, can accordingly reduce submodule simultaneously and trigger frequency and capacitor's capacity and have half-bridge/mono- clamp of DC Line Fault clamping ability Series-parallel connection MMC is topological from all pressing.

The specific constituted mode of the utility model is as follows.

The distributed half-bridge of auxiliary capacitor based on equality constraint/mono- clamp series-parallel connection MMC is topological from all pressing, including by A, B, C Three-phase constitute half-bridge MMC model, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual single clamp submodule Block and 1 brachium pontis reactor are in series；Including by 6NIndividual auxiliary switch（6KIndividual mechanical switch, 6N-6KIndividual IGBT mould Block）, 6N+ 7 clamp diodes, 4 auxiliary capacitors, 4 auxiliary IGBT module composition from all press subsidiary loop.

Distributed half-bridge/mono- clamp series-parallel connection the MMC of the above-mentioned auxiliary capacitor based on equality constraint is from all pressing topology, series-parallel connection MMC In model, A phase upper and lower bridge arm, in single clamp submodule, the positive pole of diode connexon module capacitance, IGBT module connects submodule The negative pole of block electric capacity.1st submodule of brachium pontis in A phase, its submodule electric capacity negative pole the 2nd son with brachium pontis in A phase downwards Module I GBT module midpoint is connected, and its submodule IGBT module midpoint is connected with dc bus positive pole upwards；Bridge in A phase The of armiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacity negative pole downwards with brachium pontis in A phase thei+1 Individual sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis in A phasei- 1 submodule Electric capacity negative pole is connected；The of brachium pontis in A phaseKIndividual half-bridge submodule, its submodule electric capacity negative pole downwards with brachium pontis in A phase TheK+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis in A phaseK- 1 Submodule electric capacity negative pole is connected；The of brachium pontis in A phasejIndividual submodule, whereinjValue beK+ 2～N- 1, its submodule Diode and IGBT module tie-point brachium pontis the downwards and in A phasej+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis in A phasej- 1 submodule diode is connected with IGBT module tie-point；In A phase Brachium pontisNIndividual submodule, its submodule diode and IGBT module tie-point are down through two brachium pontis reactorsL ₀Under A phase 1st sub- module I GBT module midpoint of brachium pontis is connected, its submodule IGBT module midpoint upwards with brachium pontis in A phaseN- 1 submodule diode is connected with IGBT module tie-point；The of brachium pontis under A phaseiIndividual submodule, whereiniValue For 2～K- 1, its submodule electric capacity negative pole downwards with brachium pontis under A phase thei+ 1 sub- module I GBT module midpoint is connected, its IGBT module midpoint upwards with brachium pontis under A phasei- 1 sub- module capacitance negative pole is connected；The of brachium pontis under A phaseKIndividual submodule Block, its submodule electric capacity negative pole downwards with brachium pontis under A phase theK+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis under A phaseK- 1 sub- module capacitance negative pole is connected；Brachium pontis under A phasejIndividual submodule, WhereinjValue beK+ 2～N- 1, its submodule diode and IGBT module tie-point brachium pontis the downwards and under A phasej+ 1 Submodule IGBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis under A phasej- 1 submodule two pole Pipe is connected with IGBT module tie-point；Brachium pontis under A phaseNIndividual submodule diode is downwards and straight with IGBT module tie-point Stream bus negative pole is connected, its submodule IGBT module midpoint upwards with brachium pontis under A phase theN- 1 submodule diode with IGBT module tie-point is connected.B phase upper and lower bridge arm, in single clamp submodule, IGBT module connexon module capacitance positive pole, two Pole pipe connexon module capacitance negative pole, the 1st submodule of upper brachium pontis, its submodule capacitance cathode upwards with dc bus positive pole It is connected, its submodule IGBT module midpoint is connected with the 2nd sub- module capacitance positive pole of brachium pontis in B phase downwards；Bridge in B phase The of armiIndividual submodule, whereiniValue be 2～K- 1, its submodule capacitance cathode upwards with brachium pontis in B phasei-1 Individual sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase thei+ 1 submodule Capacitance cathode is connected；The of brachium pontis in B phaseKIndividual submodule, its submodule capacitance cathode upwards with brachium pontis in B phaseK-1 Individual sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase theK+ 1 submodule IGBT module is connected with diode connection point；The of brachium pontis in B phasejIndividual submodule, whereinjValue beK+ 2～N- 1, Its submodule IGBT module and diode connection point upwards with brachium pontis in B phasej- 1 sub- module I GBT module midpoint is connected, Its submodule IGBT module midpoint downwards with brachium pontis in B phase thej+ 1 sub- module I GBT module is connected with diode connection point； Brachium pontis in B phaseNIndividual submodule, its submodule IGBT module and diode connection point upwards with brachium pontis in B phaseN- 1 son Module I GBT module midpoint is connected, and its submodule IGBT module midpoint is down through two brachium pontis reactorsL ₀With brachium pontis under B phase The 1st sub- module capacitance positive pole be connected；The of brachium pontis under B phaseiIndividual submodule, whereiniValue be 2～K- 1, its son Module capacitance positive pole upwards with brachium pontis under B phasei- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module Midpoint downwards with brachium pontis under B phase thei+ 1 sub- module capacitance positive pole is connected；The of brachium pontis under B phaseKIndividual submodule, its son Module capacitance positive pole upwards with brachium pontis under B phaseK- 1 sub- module I GBT module midpoint is connected, in its submodule IGBT module Point downwards with brachium pontis under B phase theK+ 1 sub- module I GBT module is connected with diode connection point；Brachium pontis under B phasejHeight Module, whereinjValue beK+ 2～N- 1, its submodule IGBT module and diode connection point upwards with brachium pontis under B phasej- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase thej+ 1 submodule Block IGBT module is connected with diode connection point；Brachium pontis under B phaseNIndividual submodule, its submodule IGBT module and diode Tie-point upwards with brachium pontis under B phaseN- 1 sub- module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downward It is connected with dc bus negative pole.The connected mode of C phase upper and lower bridge arm submodule is consistent with A phase or B.

Distributed half-bridge/mono- clamp series-parallel connection the MMC of the above-mentioned auxiliary capacitor based on equality constraint is from all pressing topology, auxiliary from all pressing Help in loop, first auxiliary capacitor positive pole connects auxiliary IGBT module negative pole connection clamp diode and be just incorporated to dc bus Pole；Second auxiliary capacitor negative pole connects auxiliary IGBT module positive pole connection clamp diode and is incorporated to dc bus negative pole；3rd Individual auxiliary capacitor positive pole connects auxiliary IGBT module negative pole connection clamp diode and is incorporated to dc bus positive pole, the 4th auxiliary electricity Hold negative pole connection auxiliary IGBT module positive pole connection clamp diode and be incorporated to dc bus negative pole.Clamp diode, by auxiliary Switch connects the 1st sub- module capacitance and first auxiliary capacitor positive pole in brachium pontis in A phase；Connected in A phase by auxiliary switch In brachium pontisiIndividual sub- module capacitance and thei+ 1 sub- module capacitance positive pole, whereiniValue be 1～N-1；By auxiliary Switch connects in A phase in brachium pontis theNThe 1st sub- module capacitance positive pole of individual sub- module capacitance and brachium pontis under A phase；Opened by auxiliary Close and connect under A phase in brachium pontis theiIndividual sub- module capacitance and brachium pontis under A phasei+ 1 sub- module capacitance positive pole, whereiniTake Be worth for 1～N-1；Connect under A phase in brachium pontis the by auxiliary switchNIndividual sub- module capacitance and second auxiliary capacitor positive pole. Clamp diode, connects the negative pole of the 1st sub- module capacitance and first auxiliary capacitor in brachium pontis in B phase by auxiliary switch； Connect in B phase in brachium pontis the by auxiliary switchiIndividual sub- module capacitance and theiThe negative pole of+1 sub- module capacitance, whereini's Value be 1～N-1；Connect in B phase in brachium pontis the by auxiliary switchNThe 1st submodule of individual sub- module capacitance and brachium pontis under B phase The negative pole of block electric capacity；Connect under B phase in brachium pontis the by auxiliary switchiIndividual sub- module capacitance and brachium pontis under B phasei+ 1 son The negative pole of module capacitance, whereiniValue be 1～N-1；Connect under B phase in brachium pontis the by auxiliary switchNIndividual submodule Electric capacity and the negative pole of second auxiliary capacitor.When the annexation of C phase submodule is consistent with A, C phase upper and lower bridge arm Neutron module Between clamp diode connected mode consistent with A, the 3rd auxiliary capacitor positive pole be through mechanical switch, clamp diode even simultaneously Connect the sub- module capacitance positive pole of brachium pontis first in C phase, the 3rd auxiliary capacitor negative pole connects B through mechanical switch, clamp diode The sub- module capacitance negative pole of brachium pontis first in phase, the 4th auxiliary capacitor positive pole connects under C phase through mechanical switch, clamp diode Brachium pontisNIndividual sub- module capacitance positive pole, the 4th auxiliary capacitor negative pole connects brachium pontis under B phase through mechanical switch, clamp diode TheNIndividual sub- module capacitance negative pole；When the annexation of C phase submodule is consistent with B, clamper between C phase upper and lower bridge arm Neutron module The connected mode of diode is consistent with B, and the 3rd auxiliary capacitor negative pole connects C phase through mechanical switch, clamp diode simultaneously Upper first sub- module capacitance negative pole of brachium pontis, the 3rd auxiliary capacitor positive pole connects bridge in A phase through mechanical switch, clamp diode The sub- module capacitance positive pole of first, arm, the 4th auxiliary capacitor negative pole connects under C phase brachium pontis the through mechanical switch, clamp diodeNIndividual sub- module capacitance negative pole, the 4th auxiliary capacitor positive pole connects under A phase brachium pontis the through mechanical switch, clamp diodeNIndividual Submodule capacitance cathode.

Brief description

Fig. 1 is the structural representation of half-bridge submodule；

Fig. 2 is single structural representation clamping submodule；

Fig. 3 is that the distributed half-bridge of the auxiliary capacitor/mono- clamp series-parallel connection MMC based on equality constraint is topological from all pressing.

Specific embodiment

For of the present utility model performance and operation principle are expanded on further, below in conjunction with accompanying drawing to the composition to utility model Mode is specifically described with operation principle.But the half-bridge based on this principle/mono- clamp series-parallel connection MMC is not limited to figure from all pressure topologys 3.

With reference to Fig. 3, the distributed half-bridge of the auxiliary capacitor based on equality constraint/mono- clamp series-parallel connection MMC is topological from all pressing, including The half-bridge being made up of A, B, C three-phase/mono- clamp series-parallel connection MMC model, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule Block,N-KIndividual single clamp submodule and 1 brachium pontis reactor are in series；Including by 6NIndividual auxiliary switch（6KIndividual machinery is opened Close, 6N-6KIndividual IGBT module）, 6N+ 7 clamp diodes, 4 auxiliary capacitors, 4 assist the certainly equal of IGBT module composition Pressure subsidiary loop.

In half-bridge/mono- clamp series-parallel connection MMC model, A phase upper and lower bridge arm, in single clamp submodule, diode connects submodule The positive pole of electric capacity, the negative pole of IGBT module connexon module capacitance.1st submodule of brachium pontis, its submodule electric capacity in A phaseC­_{au­_1}Negative pole is connected at module I GBT module midpoint sub- with the 2nd of brachium pontis in A phase downwards, its submodule IGBT module midpoint It is connected with dc bus positive pole upwards；The of brachium pontis in A phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule Block electric capacityC­_{au­_i} Negative pole downwards with brachium pontis in A phase thei+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT Module midpoint upwards with brachium pontis in A phasei- 1 sub- module capacitanceC _{­au­_i-1}Negative pole is connected；The of brachium pontis in A phaseKIndividual Half-bridge submodule, its submodule electric capacityC _{­au­_K} Negative pole downwards with brachium pontis in A phase theK+ 1 sub- module I GBT module midpoint phase Connect, its submodule IGBT module midpoint upwards with brachium pontis in A phase theK- 1 sub- module capacitanceC­_{au­_K-1}Negative pole is connected； The of brachium pontis in A phasejIndividual submodule, whereinjValue beK+ 2～N- 1, its submodule diode is connect with IGBT module Point downwards with brachium pontis in A phase thej+ 1 sub- module I GBT module midpoint is connected, and its submodule IGBT module midpoint is upwards with Brachium pontis in A phasej- 1 submodule diode is connected with IGBT module tie-point；Brachium pontis in A phaseNIndividual submodule, its Submodule diode and IGBT module tie-point are down through two brachium pontis reactorsL ₀The 1st submodule with brachium pontis under A phase IGBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis in A phaseN- 1 submodule diode It is connected with IGBT module tie-point；The of brachium pontis under A phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule Electric capacityC­_{al­_i} Negative pole downwards with brachium pontis under A phase thei+ 1 sub- module I GBT module midpoint is connected, its IGBT module midpoint to Upper the with brachium pontis under A phasei- 1 sub- module capacitanceC­ _{al­_i-1}Negative pole is connected；The of brachium pontis under A phaseKIndividual submodule, its son Module capacitanceC _{­al_K} Negative pole downwards with brachium pontis under A phase theK+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis under A phaseK- 1 sub- module capacitanceC­_{al­_K-1}Negative pole is connected；Brachium pontis under A phasejIndividual Submodule, whereinjValue beK+ 2～N- 1, its submodule diode and IGBT module tie-point brachium pontis downwards and under A phase Thej+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis under A phasej- 1 son Module diode is connected with IGBT module tie-point；Brachium pontis under A phaseNIndividual submodule diode and IGBT module tie-point Be connected with dc bus negative pole downwards, its submodule IGBT module midpoint upwards with brachium pontis under A phaseN- 1 submodule Diode is connected with IGBT module tie-point.B phase upper and lower bridge arm, in single clamp submodule, IGBT module connects submodule electricity Hold positive pole, diode connexon module capacitance negative pole, the 1st submodule of upper brachium pontis, its submodule electric capacityC _{­bu­_1}Positive pole is upwards It is connected with dc bus positive pole, its submodule IGBT module midpoint the 2nd sub- module capacitance with brachium pontis in B phase downwardsC _{­bu­_2}Positive pole is connected；The of brachium pontis in B phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacityC­_{bu­_i} Positive pole upwards with brachium pontis in B phasei- 1 sub- module I GBT module midpoint is connected, in its submodule IGBT module Point downwards with brachium pontis in B phase thei+ 1 sub- module capacitanceC­_{bu­_i+1}Positive pole is connected；The of brachium pontis in B phaseKIndividual submodule Block, its submodule electric capacityC­_{bu­_K} Positive pole upwards with brachium pontis in B phaseK- 1 sub- module I GBT module midpoint is connected, its son Module I GBT module midpoint downwards with brachium pontis in B phase theK+ 1 sub- module I GBT module is connected with diode connection point；B phase The of upper brachium pontisjIndividual submodule, whereinjValue beK+ 2～N- 1, its submodule IGBT module and diode connection point to Upper the with brachium pontis in B phasej- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with B phase on Brachium pontisj+ 1 sub- module I GBT module is connected with diode connection point；Brachium pontis in B phaseNIndividual submodule, its submodule IGBT module and diode connection point upwards with brachium pontis in B phaseN- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint is down through two brachium pontis reactorsL ₀The 1st sub- module capacitance with brachium pontis under B phaseC _{­bl­_1}Positive pole is connected Connect；The of brachium pontis under B phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacityC _{­bl_i} Positive pole upwards with B The of brachium pontis under phasei- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase ?i+ 1 sub- module capacitanceC­ _{bl­_i+1}Positive pole is connected；The of brachium pontis under B phaseKIndividual submodule, its submodule electric capacityC _{­bl_K} Positive pole upwards with brachium pontis under B phaseK- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with Brachium pontis under B phaseK+ 1 sub- module I GBT module is connected with diode connection point；Brachium pontis under B phasejIndividual submodule, whereinjValue beK+ 2～N- 1, its submodule IGBT module and diode connection point upwards with brachium pontis under B phasej- 1 submodule Block IGBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase thej+ 1 sub- module I GBT module It is connected with diode connection point；Brachium pontis under B phaseNIndividual submodule, its submodule IGBT module is with diode connection point upwards With brachium pontis under B phaseN- 1 sub- module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards and dc bus Negative pole is connected.The connected mode of C phase upper and lower bridge arm submodule is consistent with A.

From all pressing in subsidiary loop, auxiliary capacitorC ₁Positive pole connects auxiliary IGBT moduleT ₁, negative pole connection clamp diode is simultaneously Enter dc bus positive pole；Auxiliary capacitorC ₂Negative pole connects auxiliary IGBT moduleT ₂, positive pole connect clamp diode be incorporated to dc bus Negative pole；Auxiliary capacitorC ₃Positive pole connects auxiliary IGBT moduleT ₃, negative pole connect clamp diode be incorporated to dc bus positive pole；Auxiliary Electric capacityC ₄Negative pole connects auxiliary IGBT moduleT ₄, positive pole connect clamp diode be incorporated to dc bus negative pole.Clamp diode, leads to Cross auxiliary switchK _{au_12}Connect the 1st sub- module capacitance in brachium pontis in A phaseC _{­au­_1}With auxiliary capacitorC ₁Positive pole；Opened by auxiliary CloseK _{au_i2}、K _{au_（i+1）2}Connect in A phase in brachium pontis theiIndividual sub- module capacitanceC _{­au­_i} Withi+ 1 sub- module capacitanceC _{­au­_i+1} Positive pole, whereiniValue be 1～K-1；By auxiliary switchK _{au_K2}、T _{au_K+1}Connect in A phase in brachium pontis theKIndividual submodule Electric capacityC _{­au­_K} WithK+ 1 sub- module capacitanceC­ _{au_K+1}Positive pole；By auxiliary switchT _{au_j} 、T _{au_j+1}Connect in brachium pontis in A phase ThejIndividual sub- module capacitanceC _{­au­_j} Withj+ 1 sub- module capacitanceC _{­au­_j+1}Positive pole, whereinjValue beK+ 1～N-1； By auxiliary switchT _{au_N} 、K _{al_12}Connect in A phase in brachium pontis theNIndividual sub- module capacitanceC­_{au_N} With the 1st submodule of brachium pontis under A phase Block electric capacityC _{­al­_1}Positive pole；By auxiliary switchK _{al_i2}、K _{al_（i+1）2}Connect under A phase in brachium pontis theiIndividual sub- module capacitanceC _{­al­_i} Withi+ 1 sub- module capacitanceC _{­al­_i+1}Positive pole, whereiniValue be 1～K-1；By auxiliary switchK _{al_K2}、T _{al_K+1} Connect under A phase in brachium pontis theKIndividual sub- module capacitanceC­_{al­_K} WithK+ 1 sub- module capacitanceC­_{al­_K+1}Positive pole；Opened by auxiliary CloseT _{al_j} 、T _{al_j+1}Connect under A phase in brachium pontis thejIndividual sub- module capacitanceC _{­al_j} Withj+ 1 sub- module capacitanceC _{­al­_j+1}Just Pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{al_N} Connect under A phase in brachium pontis theNIndividual sub- module capacitanceC _{­al_N} With auxiliary capacitorC ₂Positive pole.Clamp diode, by auxiliary switchK _{bu_12}Connect the 1st submodule electricity in brachium pontis in B phase HoldC _{­bu­_1}With auxiliary capacitorC ₁, auxiliary capacitorC ₃Negative pole；By auxiliary switchK _{bu_i2}、K _{bu_（i+1）2}Connect in B phase in brachium pontis thei Individual sub- module capacitanceC­_{bu­_i} Withi+ 1 sub- module capacitanceC­_{bu­_i+1}Negative pole, whereiniValue be 1～K-1；By auxiliary SwitchK _{bu_K2}、T _{bu_K+1}Connect in B phase in brachium pontis theKIndividual sub- module capacitanceC­_{bu­_K} WithK+ 1 sub- module capacitanceC­_{bu­_K+1} Negative pole；By auxiliary switchT _{bu_j} 、T _{bu_j+1}Connect in B phase in brachium pontis thejIndividual sub- module capacitanceC­_{bu­_j} Withj+ 1 submodule Block electric capacityC­_{bu­_j+1}Negative pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{bu_N} 、K _{bl_12}Connect in brachium pontis in B phase TheNIndividual sub- module capacitanceC­_{bu­_N} With the 1st sub- module capacitance in brachium pontis under B phaseC­_{bl_1}Negative pole；By auxiliary switchK _{bl_i2}、K _{bl_（i+1）2}Connect under B phase in brachium pontis theiIndividual sub- module capacitanceC­_{bl­_i} Withi+ 1 sub- module capacitanceC­_{bl­_i+1}Negative pole, its IniValue be 1～K-1；By auxiliary switchK _{bl_K2}、T _{bl_K+1}Connect under B phase in brachium pontis theKIndividual sub- module capacitanceC­_{bl_K} WithK+ 1 sub- module capacitanceC­_{bl­_K+1}Negative pole；By auxiliary switchT _{bl_j} 、T _{bl_j+1}Connect under B phase in brachium pontis thejIndividual submodule Block electric capacityC­_{bl­_j} Withj+ 1 sub- module capacitanceC­_{bl_j+1}Negative pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{bl_N} Connect under B phase in brachium pontis theNIndividual sub- module capacitanceC _{­bl­_N} With auxiliary capacitorC ₂, auxiliary capacitorC ₄Negative pole.C phase bridge up and down Between arm submodule, the annexation of clamp diode is consistent with A；First sub- module capacitance of brachium pontis in C phaseC _{cu­­­_1}Positive pole warp Auxiliary switchK _{cu_12}And clamp diode is connected to auxiliary capacitorC ₃Positive pole；Brachium pontis under C phaseNIndividual sub- module capacitanceC _{c­­l_N} Just Pole is through auxiliary switchT _{cl_N} And clamp diode is connected to auxiliary capacitorC ₄Positive pole.

Under normal circumstances, from all pressure subsidiary loops 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Normally closed, whereiniValue be 1～K,jValue beK+ 1～N, A phase Upper first sub- module capacitance of brachium pontisC­_{au­_1}During bypass, now assist IGBT moduleT ₁Disconnect, submodule electric capacityC _{­au­_1}With auxiliary Help electric capacityC ₁In parallel by clamp diode；Brachium pontis in A phaseiIndividual sub- module capacitanceC­_{au­_i} During bypass, whereiniValue For 2～N, submodule electric capacityC­_{au­_i} With submodule electric capacityC­_{au­_i-1}In parallel by clamp diode；Brachium pontis first under A phase Submodule electric capacityC­_{al_1}During bypass, submodule electric capacityC­_{al­_1}By clamp diode, two brachium pontis reactorsL ₀With submodule Electric capacityC­ _{au­_N} In parallel；Brachium pontis under A phaseiIndividual sub- module capacitanceC­_{al_i} During bypass, whereiniValue be 2～N, submodule Electric capacityC­ _{al­_i} With submodule electric capacityC­_{al_i-1}In parallel by clamp diode；Auxiliary IGBT moduleT ₂During closure, auxiliary capacitorC ₂ By clamp diode and submodule electric capacityC­_{al_N} In parallel.

Under normal circumstances, from all pressure subsidiary loops 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Normally closed, whereiniValue be 1～K,jValue beK+ 1～N, auxiliary Help IGBT moduleT ₁During closure, auxiliary capacitorC ₁With submodule electric capacityC­_{bu­_1}In parallel by clamp diode；Brachium pontis in B phasei Individual sub- module capacitanceC­_{bu­_i} During bypass, whereiniValue be 1～N- 1, submodule electric capacityC­_{bu­_i} With submodule electric capacityC­ _{bu­_i+1}In parallel by clamp diode；Brachium pontis in B phaseNIndividual sub- module capacitanceC­_{bu_N} During bypass, submodule electric capacityC _{­bu­_N} By clamp diode, two brachium pontis reactorsL ₀With submodule electric capacityC­ _{bl­_1}In parallel；Brachium pontis under B phaseiIndividual submodule electricity HoldC­_{bl_i} During bypass, whereiniValue be 1～N- 1, submodule electric capacityC _{­bl­_i} With submodule electric capacityC­ _{bl_i+1}By clamper Diodes in parallel；Brachium pontis under B phaseNIndividual sub- module capacitanceC­_{bl_N} During bypass, submodule electric capacityC­_{bl­_N} With auxiliary capacitorC­ ₂ In parallel by clamp diode.Above-mentioned auxiliary IGBT moduleT ₁Trigger and first submodule of brachium pontis in A phase triggering Signal is consistent；Auxiliary IGBT moduleT ₂Trigger and brachium pontis under B phaseNThe trigger of individual submodule is consistent.

During the conversion of orthogonal stream energy, each submodule replaces input, bypass, assists IGBT moduleT ₁、T ₂Alternately Closure, shutoff, between A, B phase upper and lower bridge arm, capacitance voltage, in the presence of clamp diode, meets lower column constraint：

It follows that in half-bridge/mono- clamp series-parallel connection MMC in the dynamic process completing the conversion of orthogonal stream energy, under satisfaction The constraints in face：

Between C, B phase upper and lower bridge arm, the constraints of capacitance voltage is in the same manner：

Illustrated from above-mentioned, this half-bridge/mono- clamp series-parallel connection MMC topology possesses submodule capacitor voltage and certainly equalizes energy Power.

Finally it should be noted that：Described embodiment is only some embodiments of the present application, rather than whole realities Apply example.Based on the embodiment in the application, those of ordinary skill in the art are obtained under the premise of not making creative work Every other embodiment, broadly fall into the application protection scope.

Claims (4)

1. the distributed half-bridge of the auxiliary capacitor based on equality constraint/mono- clamp series-parallel connection MMC from all press topology it is characterised in that：Bag Include the half-bridge that is made up of A, B, C three-phase/mono- clamp series-parallel connection MMC model, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule Block,N-KIndividual single clamp submodule and 1 brachium pontis reactor are in series；Including by 6KIndividual mechanical switch, 6N-6KIndividual The auxiliary switch of IGBT module composition, 6N+ 7 clamp diodes, 4 auxiliary capacitorsC ₁、C ₂、C ₃、C ₄, 4 auxiliary IGBT ModuleT ₁、T ₂、T ₃、T ₄Constitute all presses subsidiary loop certainly.

2. the distributed half-bridge/mono- clamp series-parallel connection MMC of the auxiliary capacitor based on equality constraint according to claim 1 is from all pressing Topology it is characterised in that：A phase upper and lower bridge arm, in single clamp submodule, the positive pole of diode connexon module capacitance, IGBT mould The negative pole of block connexon module capacitance；1st submodule of brachium pontis, its submodule electric capacity in A phaseC­_{au­_1}Negative pole downwards with A phase 2nd sub- module I GBT module midpoint of upper brachium pontis is connected, its submodule IGBT module midpoint upwards with dc bus positive pole It is connected；The of brachium pontis in A phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacityC­_{au­_i} Negative pole to Lower with brachium pontis in A phase thei+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with A phase The of upper brachium pontisi- 1 sub- module capacitanceC _{­au­_i-1}Negative pole is connected；The of brachium pontis in A phaseKIndividual half-bridge submodule, its submodule Block electric capacityC _{­au­_K} Negative pole downwards with brachium pontis in A phase theK+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT Module midpoint upwards with brachium pontis in A phaseK- 1 sub- module capacitanceC­_{au­_K-1}Negative pole is connected；The of brachium pontis in A phasejIndividual Submodule, whereinjValue beK+ 2～N- 1, its submodule diode and IGBT module tie-point brachium pontis downwards and in A phase Thej+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with brachium pontis in A phasej- 1 Submodule diode is connected with IGBT module tie-point；Brachium pontis in A phaseNIndividual submodule, its submodule diode and IGBT Module tie-point is down through two brachium pontis reactorsL ₀Module I GBT module midpoint sub- with the 1st of brachium pontis under A phase is connected, its Submodule IGBT module midpoint upwards with brachium pontis in A phaseN- 1 submodule diode is connected with IGBT module tie-point Connect；The of brachium pontis under A phaseiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacityC­_{al­_i} Negative pole is downwards and A Brachium pontis under phasei+ 1 sub- module I GBT module midpoint is connected, its IGBT module midpoint upwards with brachium pontis under A phasei- 1 Submodule electric capacityC­ _{al­_i-1}Negative pole is connected；The of brachium pontis under A phaseKIndividual submodule, its submodule electric capacityC _{­al_K} Negative pole is downward With brachium pontis under A phaseK+ 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint upwards with A phase under Brachium pontisK- 1 sub- module capacitanceC­_{al­_K-1}Negative pole is connected；Brachium pontis under A phasejIndividual submodule, whereinjValue beK + 2～N- 1, its submodule diode and IGBT module tie-point brachium pontis the downwards and under A phasejIn+1 sub- module I GBT module Point is connected, its submodule IGBT module midpoint upwards with brachium pontis under A phase thej- 1 submodule diode is joined with IGBT module Node is connected；Brachium pontis under A phaseNIndividual submodule diode is connected with dc bus negative pole downwards with IGBT module tie-point Connect, its submodule IGBT module midpoint upwards with brachium pontis under A phaseN- 1 submodule diode and IGBT module tie-point It is connected；B phase upper and lower bridge arm, in single clamp submodule, IGBT module connexon module capacitance positive pole, diode connects submodule Electric capacity negative pole, the 1st submodule of upper brachium pontis, its submodule electric capacityC _{­bu­_1}Positive pole is connected with dc bus positive pole upwards, its Submodule IGBT module midpoint the 2nd sub- module capacitance with brachium pontis in B phase downwardsC _{­bu­_2}Positive pole is connected；Brachium pontis in B phase TheiIndividual submodule, whereiniValue be 2～K- 1, its submodule electric capacityC­_{bu­_i} Positive pole upwards with brachium pontis in B phasei- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase thei+ 1 submodule Block electric capacityC­_{bu­_i+1}Positive pole is connected；The of brachium pontis in B phaseKIndividual submodule, its submodule electric capacityC­_{bu­_K} Positive pole upwards with B phase The of upper brachium pontisK- 1 sub- module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase theK+ 1 sub- module I GBT module is connected with diode connection point；The of brachium pontis in B phasejIndividual submodule, whereinjValue ForK+ 2～N- 1, its submodule IGBT module and diode connection point upwards with brachium pontis in B phasej- 1 sub- module I GBT mould Block midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase thej+ 1 sub- module I GBT module and two poles Pipe tie-point is connected；Brachium pontis in B phaseNIndividual submodule, its submodule IGBT module and diode connection point upwards with B phase Upper brachium pontisN- 1 sub- module I GBT module midpoint is connected, and its submodule IGBT module midpoint is down through two brachium pontis reactance DeviceL ₀The 1st sub- module capacitance with brachium pontis under B phaseC _{­bl­_1}Positive pole is connected；The of brachium pontis under B phaseiIndividual submodule, whereini Value be 2～K- 1, its submodule electric capacityC _{­bl_i} Positive pole upwards with brachium pontis under B phaseiIn -1 sub- module I GBT module Point is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase thei+ 1 sub- module capacitanceC­ _{bl­_i+1}Positive pole phase Connect；The of brachium pontis under B phaseKIndividual submodule, its submodule electric capacityC _{­bl_K} Positive pole upwards with brachium pontis under B phaseK- 1 submodule Block IGBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis under B phase theK+ 1 sub- module I GBT module It is connected with diode connection point；Brachium pontis under B phasejIndividual submodule, whereinjValue beK+ 2～N- 1, its submodule IGBT module and diode connection point upwards with brachium pontis under B phasej- 1 sub- module I GBT module midpoint is connected, its submodule Block IGBT module midpoint downwards with brachium pontis under B phase thej+ 1 sub- module I GBT module is connected with diode connection point；Under B phase Brachium pontisNIndividual submodule, its submodule IGBT module and diode connection point upwards with brachium pontis under B phaseN- 1 submodule IGBT module midpoint is connected, and its submodule IGBT module midpoint is connected with dc bus negative pole downwards；C phase upper and lower bridge arm The connected mode of module can consistent with A it is also possible to consistent with B；Due to single presence clamping submodule, half-bridge submodule Unnecessary configuration IGCT between output line up and down；Therefore be parallel between the output line up and down of A, B, C phase upper and lower bridge arm submodule Mechanical switchK _{au_i1}、K _{al_i1}、K _{bu_i1}、K _{bl_i1}、K _{cu_i1}、K _{cl_i1}、K _{au_j} 、K _{al_j} 、K _{bu_j} 、K _{bl_j} 、K _{cu_j} 、K _{cl_j} , whereini's Value be 1～K,jValue beK+ 1～N；A, B, C three-phase status that above-mentioned annexation is constituted is consistent.

3. the distributed half-bridge/mono- clamp series-parallel connection MMC of the auxiliary capacitor based on equality constraint according to claim 1 is from all pressing Topology it is characterised in that：From all pressing in subsidiary loop, auxiliary capacitorC ₁Positive pole connects auxiliary IGBT moduleT ₁, negative pole connection clamp Position diode is incorporated to dc bus positive pole；Auxiliary capacitorC ₂Negative pole connects auxiliary IGBT moduleT ₂, positive pole connection clamp diode It is incorporated to dc bus negative pole；Auxiliary capacitorC ₃Positive pole connects auxiliary IGBT moduleT ₃, negative pole connect clamp diode be incorporated to direct current Bus positive pole；Auxiliary capacitorC ₄Negative pole connects auxiliary IGBT moduleT ₄, positive pole connect clamp diode be incorporated to dc bus negative pole； Clamp diode, by auxiliary switchK _{au_12}Connect the 1st sub- module capacitance in brachium pontis in A phaseC _{­au­_1}With auxiliary capacitorC ₁Just Pole；By auxiliary switchK _{au_i2}、K _{au_（i+1）2}Connect in A phase in brachium pontis theiIndividual sub- module capacitanceC _{­au­_i} Withi+ 1 submodule Block electric capacityC _{­au­_i+1}Positive pole, whereiniValue be 1～K-1；By auxiliary switchK _{au_K2}、T _{au_K+1}Connect brachium pontis in A phase InKIndividual sub- module capacitanceC _{­au­_K} WithK+ 1 sub- module capacitanceC­ _{au_K+1}Positive pole；By auxiliary switchT _{au_j} 、T _{au_j+1}Even Connect in brachium pontis in A phasejIndividual sub- module capacitanceC _{­au­_j} Withj+ 1 sub- module capacitanceC _{­au­_j+1}Positive pole, whereinjTake It is worth and beK+ 1～N-1；By auxiliary switchT _{au_N} 、K _{al_12}Connect in A phase in brachium pontis theNIndividual sub- module capacitanceC­_{au_N} With A phase Lower the 1st sub- module capacitance of brachium pontisC _{­al­_1}Positive pole；By auxiliary switchK _{al_i2}、K _{al_（i+1）2}Connect under A phase in brachium pontis theiIndividual Submodule electric capacityC _{­al­_i} Withi+ 1 sub- module capacitanceC _{­al­_i+1}Positive pole, whereiniValue be 1～K-1；By auxiliary SwitchK _{al_K2}、T _{al_K+1}Connect under A phase in brachium pontis theKIndividual sub- module capacitanceC­_{al­_K} WithK+ 1 sub- module capacitanceC­_{al­_K+1} Positive pole；By auxiliary switchT _{al_j} 、T _{al_j+1}Connect under A phase in brachium pontis thejIndividual sub- module capacitanceC _{­al_j} Withj+ 1 submodule Electric capacityC _{­al­_j+1}Positive pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{al_N} Connect under A phase in brachium pontis theN Individual sub- module capacitanceC _{­al_N} With auxiliary capacitorC ₂Positive pole；Clamp diode, by auxiliary switchK _{bu_12}Connect in brachium pontis in B phase 1st sub- module capacitanceC _{­bu­_1}With auxiliary capacitorC ₁Negative pole；By auxiliary switchK _{bu_i2}、K _{bu_（i+1）2}Connect in brachium pontis in B phase TheiIndividual sub- module capacitanceC­_{bu­_i} Withi+ 1 sub- module capacitanceC­_{bu­_i+1}Negative pole, whereiniValue be 1～K-1；Logical Cross auxiliary switchK _{bu_K2}、T _{bu_K+1}Connect in B phase in brachium pontis theKIndividual sub- module capacitanceC­_{bu­_K} WithK+ 1 sub- module capacitanceC­_{bu­_K+1}Negative pole；By auxiliary switchT _{bu_j} 、T _{bu_j+1}Connect in B phase in brachium pontis thejIndividual sub- module capacitanceC­_{bu­_j} Withj+1 Individual sub- module capacitanceC­_{bu­_j+1}Negative pole, whereinjValue beK+ 1～N-1；By auxiliary switchT _{bu_N} 、K _{bl_12}Connect B phase In upper brachium pontisNIndividual sub- module capacitanceC­_{bu­_N} With the 1st sub- module capacitance in brachium pontis under B phaseC­_{bl_1}Negative pole；Opened by auxiliary CloseK _{bl_i2}、K _{bl_（i+1）2}Connect under B phase in brachium pontis theiIndividual sub- module capacitanceC­_{bl­_i} Withi+ 1 sub- module capacitanceC­_{bl­_i+1} Negative pole, whereiniValue be 1～K-1；By auxiliary switchK _{bl_K2}、T _{bl_K+1}Connect under B phase in brachium pontis theKIndividual submodule Electric capacityC­_{bl_K} WithK+ 1 sub- module capacitanceC­_{bl­_K+1}Negative pole；By auxiliary switchT _{bl_j} 、T _{bl_j+1}Connect in brachium pontis under B phase ThejIndividual sub- module capacitanceC­_{bl­_j} Withj+ 1 sub- module capacitanceC­_{bl_j+1}Negative pole, whereinjValue beK+ 1～N-1； By auxiliary switchT _{bl_N} Connect under B phase in brachium pontis theNIndividual sub- module capacitanceC _{­bl­_N} With auxiliary capacitorC ₂Negative pole；C phase submodule When the annexation of block is consistent with A, between C phase upper and lower bridge arm Neutron module, the connected mode of clamp diode is consistent with A, with When auxiliary capacitorC ₃Positive pole is through auxiliary switchK _{cu_12}, clamp diode connect C phase on first sub- module capacitance of brachium pontisC _{cu_1}Just Pole, auxiliary capacitorC ₃Negative pole is through auxiliary switchK _{bu_12}, clamp diode connect B phase on first sub- module capacitance of brachium pontisC _{bu_1}Negative Pole, auxiliary capacitorC ₄Positive pole through auxiliary switchT _{cl_N} , clamp diode connect brachium pontis the under C phaseNIndividual sub- module capacitanceC _{cl_N} Positive pole, auxiliary capacitorC ₄Negative pole is through auxiliary switchT _{bl_N} , clamp diode connect brachium pontis the under B phaseNIndividual sub- module capacitanceC _{bl_N} Negative pole；When the annexation of C phase submodule is consistent with B, the connected mode of clamp diode between C phase upper and lower bridge arm Neutron module Consistent with B, auxiliary capacitor simultaneouslyC ₃Negative pole is through auxiliary switchK _{cu_12}, clamp diode connect C phase on first submodule of brachium pontis Block electric capacityC _{cu_1}Negative pole, auxiliary capacitorC ₃Positive pole is through auxiliary switchK _{au_12}, clamp diode connect A phase on first submodule of brachium pontis Block electric capacityC _{au_1}Positive pole, auxiliary capacitorC ₄Negative pole is through auxiliary switchT _{cl_N} , clamp diode connect brachium pontis the under C phaseNIndividual submodule Block electric capacityC _{cl_N} Negative pole, auxiliary capacitorC ₄Positive pole is through auxiliary switchT _{al_N} , clamp diode connect brachium pontis the under A phaseNIndividual submodule Block electric capacityC _{al_N} Positive pole；6 in above-mentioned A, B, C three-phaseNIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} , whereiniValue be 1～K,jValue beK+ 1～N, 6N+ 7 clampers Diode, 4 auxiliary capacitorsC ₁、C _2、 C ₃、C ₄, and 4 auxiliary IGBT moduleT ₁、T ₂、T ₃、T ₄, collectively form from all pressure auxiliary Loop.

4. the distributed half-bridge/mono- clamp series-parallel connection MMC of the auxiliary capacitor based on equality constraint according to claim 1 is from all pressing Topology it is characterised in that：During normal condition, from all pressure subsidiary loops 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Normally closed, whereiniValue be 1～K,jValue beK+1 ~N；During failure condition, 6N-6KIndividual auxiliary switchT _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Disconnect, whereinjValue ForK+ 1～N；Under normal circumstances, first sub- module capacitance of brachium pontis in A phaseC­_{au­_1}During bypass, now assist IGBT moduleT ₁ Disconnect, submodule electric capacityC _{­au­_1}With auxiliary capacitorC ₁In parallel by clamp diode；Brachium pontis in A phaseiIndividual sub- module capacitanceC­_{au­_i} During bypass, whereiniValue be 2～N, submodule electric capacityC­_{au­_i} With submodule electric capacityC­_{au­_i-1}By clamper two Pole pipe is in parallel；First sub- module capacitance of brachium pontis under A phaseC­_{al_1}During bypass, submodule electric capacityC­_{al­_1}By clamp diode, Two brachium pontis reactorsL ₀With submodule electric capacityC­ _{au­_N} In parallel；Brachium pontis under A phaseiIndividual sub- module capacitanceC­_{al_i} During bypass, its IniValue be 2～N, submodule electric capacityC­ _{al­_i} With submodule electric capacityC­_{al_i-1}In parallel by clamp diode；Auxiliary IGBT moduleT ₂During closure, auxiliary capacitorC ₂By clamp diode and submodule electric capacityC­_{al_N} In parallel；Auxiliary IGBT moduleT ₁ During closure, auxiliary capacitorC ₁With submodule electric capacityC­_{bu­_1}In parallel by clamp diode；Brachium pontis in B phaseiIndividual submodule electricity HoldC­_{bu­_i} During bypass, whereiniValue be 1～N- 1, submodule electric capacityC­_{bu­_i} With submodule electric capacityC­ _{bu­_i+1}By pincers Position diodes in parallel；Brachium pontis in B phaseNIndividual sub- module capacitanceC­_{bu_N} During bypass, submodule electric capacityC _{­bu­_N} By clamper two pole Pipe, two brachium pontis reactorsL ₀With submodule electric capacityC­ _{bl­_1}In parallel；Brachium pontis under B phaseiIndividual sub- module capacitanceC­_{bl_i} Bypass When, whereiniValue be 1～N- 1, submodule electric capacityC _{­bl­_i} With submodule electric capacityC­ _{bl_i+1}In parallel by clamp diode；B Brachium pontis under phaseNIndividual sub- module capacitanceC­_{bl_N} During bypass, submodule electric capacityC­_{bl­_N} With auxiliary capacitorC­ ₂By clamper two pole Pipe is in parallel；Wherein assist IGBT moduleT ₁Trigger consistent with the trigger of first submodule of brachium pontis in A phase；Auxiliary IGBT moduleT ₂Trigger and brachium pontis under B phaseNThe trigger of individual submodule is consistent；In the conversion of orthogonal stream energy During, each submodule replaces input, bypass, assists IGBT moduleT ₁、T ₂It is alternately closed, turn off, A phase upper and lower bridge arm submodule Block capacitance voltage, in the presence of clamp diode, meets lower column constraint,U _C1≥U _{C­au_1}≥U _{C­au_2}…≥U _{C­au_N} ≥U _{C­al_1} ≥U _{C­al_2}…≥U _{C­al_N} ≥U _C2；B phase upper and lower bridge arm submodule capacitor voltage in the presence of clamp diode, meet following about Bundle,U _C1≤U _{C­bu_1}≤U _{C­bu_2}…≤U _{C­bu_N} ≤U _{C­bl_1}≤U _{C­bl_2}…≤U _{C­bl_N} ≤U _C2；Auxiliary electricity based on equality constraint Hold distributed half-bridge/mono- clamp series-parallel connection MMC topological from all pressing, in dynamic process, auxiliary capacitorC ₁Both can as A phase voltage High electric capacity, again can be used as the minimum electric capacity of B phase voltage；Auxiliary capacitorC ₂Both can as the minimum electric capacity of A phase voltage, and Can be used as B phase voltage highest electric capacity；Against two equality constraints, max（U _Ca­）=min（U _Cb­）, min（U _Ca）=max （U _Cb）, 4 in A, B phase upper and lower bridge armNIndividual sub- module capacitance,C _{au_i} 、C_{al_i} 、C _{bu_i} 、C _{bl_i} , whereiniValue be 1～N, with And auxiliary capacitorC ₁、C ₂, voltage be in self-balancing state, topological A, B are alternate to possess submodule capacitor voltage from the ability of equalization； If the form of the composition of C phase is consistent with A in topology, pass through auxiliary capacitorC ₃、C ₄Effect, the pact of C, B capacitive coupling voltage Bundle condition is similar with capacitance voltage constraints between A, B；If the form of the composition of C phase is consistent with B in topology, by auxiliary Electric capacityC ₃、C₄Effect, the constraints of A, C capacitive coupling voltage is similar with capacitance voltage constraints between A, B, topology tool Standby submodule capacitor voltage is from the ability of equalization.