CN205920977U - Silicon heterojunction solar cell and photovoltaic module with novel projecting pole - Google Patents
Silicon heterojunction solar cell and photovoltaic module with novel projecting pole Download PDFInfo
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Abstract
The utility model discloses a silicon heterojunction solar cell and photovoltaic module with novel projecting pole, include: the crystal silicon substrate sets gradually the first intrinsic hydrogenated amorphous silicon layer and the emitter layer of going into the light side at the crystal silicon substrate, wherein, the emitter layer is multilayer structure, includes: the first doped layer and the second doped layer that set gradually on first intrinsic hydrogenated amorphous silicon layer, first doped layer is doping type amorphous silicon hydride carbon -coating or doping type amorphous silicon hydride oxygen layer, the doping type hydrogenated amorphous silicon layer of second doped layer for handling through the attenuate. Through replacing one -course emitter layer for the multilayer structure of different materials to whole the reducing of thickness of emitter layer reduces the emitter layer and to the light absorption, improves the contact performance on emitter layer and transparent conducting film layer, thereby improve solar cell's photoelectric conversion performance.
Description
Technical field
This utility model is related to area of solar cell, particularly to a kind of silicon heterogenous solaode and photovoltaic group
Part.
Background technology
With increasing of energy crisis and problem of environmental pollution, people are to the research of regenerative resource and application and development more
Concern, wherein solar photovoltaic technology is one of the most promising renewable energy technologies.In recent years, the silicon heterogenous sun
Can battery excellent due to having relatively low preparation technology temperature, higher conversion efficiency, excellent high temperature/low light level power generation characteristics and low decay etc.
Point, is developed rapidly.
In conventional silicon heterogenous battery, light needs after transparent conductive film layer, emitter layer and intrinsic passivation layer
Crystalline silicon substrate can be entered, crystalline silicon substrate produces carrier under the irradiation of light, wherein, reach crystalline silicon substrate to enter light quantity direct
The short circuit current of impact battery, and the contact performance of emitter layer and transparent conductive film layer directly affect the filling of battery because
Son, and then affect the opto-electronic conversion performance of battery.The emitter layer of existing silicon heterogenous battery generally adopts boron doping hydrogenation
Amorphous silicon layer, because its optical energy gap is narrower, the absorption coefficient of light is high, leads to some light to be launched pole and sponges, and enters
The luminous flux of crystalline silicon substrate reduces, and leads to the short circuit current of battery to reduce.But, using boron doped hydrogenated amorphous silicon layer as send out
During emitter layer, if reducing boron doping concentration to reduce the absorbing amount of emitter stage, then result in emitter layer with thoroughly
The contact performance of bright conductive film layer is poor, and the fill factor, curve factor of impact battery, thus affect the opto-electronic conversion performance of battery.
Therefore, how to reduce the absorbing amount of emitter layer and improve the contact performance of itself and transparent conductive film layer, and then
Improve the opto-electronic conversion performance of battery, be technical problem urgently to be resolved hurrily.
Utility model content
This utility model embodiment provides a kind of silicon heterogenous solaode with novel emission pole and photovoltaic group
Part, in order to reduce the absorbing amount of emitter layer and to improve the contact performance of itself and transparent conductive film layer, and then improves battery
Opto-electronic conversion performance.
In a first aspect, this utility model embodiment provides a kind of silicon heterogenous solar-electricity with novel emission pole
Pond, comprising: crystalline silicon substrate, is successively set on the first intrinsic hydrogenated amorphous silicon layer and the emitter stage of described crystalline silicon substrate incident side
Layer；Wherein,
Described emitter layer is multiple structure, comprising: the setting gradually on the described first intrinsic hydrogenated amorphous silicon layer
One doped layer and the second doped layer；
Described first doped layer is the hydrogenated amorphous silicon carbon layer of doping type or the hydrogenated amorphous silica layer of doping type；
Described second doped layer is the doping type hydrogenated amorphous silicon layer through reduction processing.
In a kind of possible implementation, in the above-mentioned silicon heterogenous solaode of this utility model embodiment offer
In, the thickness of described emitter layer is 3-8nm.
In a kind of possible implementation, in the above-mentioned silicon heterogenous solaode of this utility model embodiment offer
In, the thickness of described first doped layer is 1-3nm, and the thickness of described second doped layer is 2-5nm.
In a kind of possible implementation, in the above-mentioned silicon heterogenous solaode of this utility model embodiment offer
In, when described crystalline silicon substrate is n-type crystalline silicon substrate,
Described first doped layer is p-type boron doped hydrogenated amorphous silicon carbon-coating or p-type boron doped hydrogenated amorphous silicon oxygen layer；
Described second doped layer is p-type boron doped hydrogenated amorphous silicon layer.
Or, when described crystalline silicon substrate is p-type crystalline silicon substrate,
Described first doped layer is the hydrogenated amorphous silicon carbon layer of N-shaped phosphorus doping or the hydrogenated amorphous silica layer of N-shaped phosphorus doping；
Described first doped layer is N-shaped phosphorus doping hydrogenated amorphous silicon layer.
In a kind of possible implementation, in the above-mentioned silicon heterogenous solaode of this utility model embodiment offer
In, described first doped layer is boron or phosphorus with the doped chemical of described second doped layer.
In a kind of possible implementation, in the above-mentioned silicon heterogenous solaode of this utility model embodiment offer
In, in described first doped layer, the doping content of doped chemical is less than the doping content of doped chemical in described second doped layer.
In a kind of possible implementation, in the above-mentioned silicon heterogenous solaode of this utility model embodiment offer
In, when described second doped layer is p-type boron doped hydrogenated amorphous silicon layer, its resistivity is 1 104ωcm-5ⅹ104ωcm；
When described second doped layer is N-shaped phosphorus doping hydrogenated amorphous silicon layer, its resistivity is 1 102ωcm-7ⅹ102
ωcm.
In a kind of possible implementation, in the above-mentioned silicon heterogenous solaode of this utility model embodiment offer
In, described emitter layer also includes: the 3rd between the described first intrinsic hydrogenated amorphous silicon layer and described first doped layer
Doped layer；
Described 3rd doped layer is the hydrogenated amorphous silicon carbon layer of doping type or the hydrogenated amorphous silica layer of doping type；
In described first doped layer doping, the doping content of carbon or oxygen element is less than carbon unit in described 3rd doped layer
Element or the doping content of oxygen element.
In a kind of possible implementation, in the above-mentioned silicon heterogenous solaode of this utility model embodiment offer
In, also include: be arranged on the first transparent conductive film layer above described emitter layer and the first metal electrode, and be successively set on
Second intrinsic hydrogenated amorphous silicon layer of described crystalline silicon substrate backlight side, back of the body electric field layer, the second transparent conductive film layer and the second metal
Electrode.
Second aspect, this utility model example also provides a kind of photovoltaic module, has novel emission pole including any of the above-described
Silicon heterogenous solaode.
The beneficial effects of the utility model are as follows:
In silicon heterogenous solaode and the photovoltaic module with novel emission pole that this utility model embodiment provides,
Due to emitter layer being set to multiple structure, and will be thinning for the thickness of the second doped layer, reduce its absorption to light, thus
Improve the luminous flux inciding crystalline silicon substrate；By improving the doped chemical doping content of the second doped layer so that emitter layer
Improve with the contact performance of transparent conductive film layer, thus lifting the fill factor, curve factor of solaode.By intrinsic near first
In first doped layer of hydrogenated amorphous silicon layer, the higher carbon of doping energy gap or oxygen element, reduce the absorptance of light,
And then reduce the absorbtivity to light for the emitter layer, improve the short circuit current of solaode；And the first doped layer can prevent
Two doped layer middle and high concentration doped chemicals spread to inside battery, improve the opto-electronic conversion performance of solaode further.
Brief description
Fig. 1 is the structural representation of silicon heterogenous solaode in prior art；
Fig. 2 is the structural representation of the silicon heterogenous solaode in this utility model embodiment with novel emission pole
One of；
Fig. 3 is the structural representation of the silicon heterogenous solaode in this utility model embodiment with novel emission pole
Two；
Fig. 4 is the structural representation of the silicon heterogenous solaode in this utility model embodiment with novel emission pole
Three；
Fig. 5 is the structural representation of the silicon heterogenous solaode in this utility model example with novel emission pole.
Specific embodiment
This utility model embodiment provides a kind of silicon heterogenous solaode with novel emission pole and photovoltaic group
Part, in order to reduce the absorbing amount of emitter layer and to improve the contact performance of itself and transparent conductive film layer, and then improves battery
Opto-electronic conversion performance.
With reference to Figure of description, this utility model embodiment is described in further detail.
As shown in figure 1, being the structural representation of silicon heterogenous solaode in prior art, as seen from Figure 1, existing
The emitter layer 13 having the silicon heterogenous solaode in technology generally adopts boron doped amorphous silicon layer, its optical energy gap
Narrower, the absorption coefficient of light is high, leads to portions incident light to be launched pole layer 13 and absorbs, so that inciding the luminous energy of crystalline silicon substrate
Amount reduces, and leads to the short circuit current of battery to reduce.When adopting boron doped amorphous silicon layer as emitter layer, send out to reduce simultaneously
The absorbing amount of emitter-base bandgap grading, boron doping concentration can not ether high, this results in the contact performance of emitter layer and transparent conductive film layer
Poor, the fill factor, curve factor of impact battery, thus affect the opto-electronic conversion performance of battery.
In order to solve the above problems, this utility model embodiment provides a kind of silicon heterogenous sun with novel emission pole
Energy battery, as shown in Figure 2, comprising: crystalline silicon substrate 21, be successively set on crystalline silicon substrate 21 incident side first is intrinsic hydrogenated amorphous
Silicon layer 22 and emitter layer 23；Wherein,
Emitter layer 23 is multiple structure, comprising: first setting gradually on the first intrinsic hydrogenated amorphous silicon layer 22 is mixed
Diamicton 231 and the second doped layer 232；
First doped layer 231 is the hydrogenated amorphous silicon carbon layer of doping type or the hydrogenated amorphous silica layer of doping type；
Second doped layer 232 is the doping type hydrogenated amorphous silicon layer through reduction processing.
In actual applications, the second above-mentioned doped layer 232 can be the non-crystalline silicon of the high-dopant concentration through reduction processing
Layer, reduction processing refers to carry out reduction processing to the thickness of the second doped layer 232, so that the second doped layer after treatment
232 thickness is adapted with its doping content.
Additionally, in the above-mentioned silicon heterogenous solaode that this utility model embodiment provides, in the first doped layer 231
The doping content of doped chemical is less than the doping content of doped chemical in the second doped layer 232.Can prevent from mixing by arrangement above
In the second higher doped layer 231 of miscellaneous concentration, doped chemical spreads to silicon heterogenous inside solar energy battery, and then improves battery
Opto-electronic conversion performance.
Due to emitter layer 23 being set to multiple structure, and will be thinning for the thickness of the second doped layer 232, reduce it right
The absorption of light, thus improve the luminous flux inciding crystalline silicon substrate；Connect with transparent conductive film layer by improving in emitter layer 23
The doped chemical doping content of the second tactile doped layer 232 is so that emitter layer 23 is carried with the contact performance of transparent conductive film layer
Height, thus lift the fill factor, curve factor of solaode.By in the first doped layer near the first intrinsic hydrogenated amorphous silicon layer 22
In 231, the higher carbon of doping energy gap or oxygen element, reduce the absorptance of light, and then reduce emitter layer 23 to light
Absorbtivity, improve solaode short circuit current, improve solaode opto-electronic conversion performance.
In being embodied as, in the above-mentioned silicon heterogenous solaode that this utility model embodiment provides, emitter stage
The thickness of layer 23 may be configured as 3-8nm.In practical application, the thickness of emitter layer 23 can be preferably arranged to 4-7nm, example
As 3nm, 4nm, 5nm, 6nm, 7nm or 8nm can be set to.It is 5- compared to the thickness of emitter layer in prior art 13
10nm, after reduction processing, the overall thickness of emitter stage reduces the second doped layer 232 that this utility model embodiment provides,
Emitter layer 23 is reduced to the absorbtivity of light.
Further, in the above-mentioned silicon heterogenous solaode that this utility model embodiment provides, the first doped layer
231 thickness may be configured as 1-3nm, and the thickness of the second doped layer may be configured as 2-5nm.For example, can be by the first doped layer 231
Thickness is set to 1nm, 1.5nm, 2nm or 3nm；The thickness of the second doped layer 232 is set to 2nm, 3nm, 4nm or 5nm.Compare
The element of doping in the second doped layer 232, the doping larger element of energy gap in the first doped layer 231 is so that emitter stage
The absorbing amount of layer 23 reduces.In actual applications, the first doped layer 231 and the second doped layer 232 can be adjusted as needed
Thickness, this utility model embodiment is not defined to its concrete value.
In the specific implementation, as shown in Figure 3 and Figure 4, above-mentioned crystalline silicon substrate may be selected n-type crystalline silicon substrate and p-type crystal silicon
Substrate.
Specifically, when crystalline silicon substrate 21 is n-type crystalline silicon substrate nc-si, as shown in figure 3,
First doped layer 231 is p-type boron doped hydrogenated amorphous silicon carbon-coating pa-sic:h or p-type boron doped hydrogenated amorphous silicon oxygen
Layer pa-siox:h；
Second doped layer 232 is p-type boron doped hydrogenated amorphous silicon layer pa-si:h.
Or, when crystalline silicon substrate 21 is p-type crystalline silicon substrate pc-si, as shown in figure 4,
First doped layer 231 is hydrogenated amorphous silicon carbon layer na-sic:h of N-shaped phosphorus doping or the hydrogenated amorphous silica of N-shaped phosphorus doping
Layer na-siox:h；
Second doped layer 232 is N-shaped phosphorus doping hydrogenated amorphous silicon layer na-si:h.
Wherein, the pa-sic:h in Fig. 3 is p-type boron doped hydrogenated amorphous silicon carbon-coating 231, and in actual applications, this layer can
Replace with pa-siox:h, pa-siox:h is p-type boron doped hydrogenated amorphous silicon oxygen layer；Similarly, the na-sic:h in Fig. 4 is n
The hydrogenated amorphous silicon carbon layer of phosphorus doping 231, in actual applications, this layer can be replaced na-siox:h, and na-siox:h mixes for N-shaped phosphorus
Miscellaneous hydrogenated amorphous silica layer.
From the foregoing, in the above-mentioned silicon heterogenous solaode of this utility model embodiment offer, the first doped layer
231 and second doped layer 232 doped chemical be boron or phosphorus.When using n-type crystalline silicon substrate, the first doped layer 231 and second
Doped chemical in doped layer 232 generally can be boron element；When using p-type crystalline silicon substrate, the first doped layer 231 and second is mixed
Doped chemical in diamicton 232 generally can be P elements.Additionally, this utility model embodiment provide above-mentioned silicon heterogenous too
In sun energy battery, the first doped layer 231 and the second doped layer 232 are all using hydrogenated amorphous silicon material.In actual applications, adopt
Other materials are realized and each hydrogenated amorphous silicon layer identical effect in this utility model embodiment, and here does not limit.
In the specific implementation, in the above-mentioned silicon heterogenous solaode that this utility model provides, the first doped layer 231
The doping content of middle doped chemical is less than the doping depth of doped chemical in the second doped layer 232.For example, adopting n-type crystalline silicon
During substrate, the doped chemical in the first doped layer 231 and the second doped layer 232 generally can be boron element, and the first doped layer 231
The doping content of middle boron element is less than the doping content of boron element in the second doped layer 232；When using p-type crystalline silicon substrate, the
Doped chemical in one doped layer 231 and the second doped layer 232 generally can be P elements, and P elements in the first doped layer 231
Doping content be less than the second doped layer 232 in P elements doping content.The can effectively be prevented using above-mentioned concentration setting
Two doped layer middle and high concentration doped chemicals spread to inside battery, improve the opto-electronic conversion performance of solaode further.
In the specific implementation, in the above-mentioned silicon heterogenous solaode that this utility model embodiment provides, when second
When doped layer 232 is p-type boron doped hydrogenated amorphous silicon layer, the resistivity of this layer is 1 104ωcm-5ⅹ104ωcm；When second
When doped layer 232 is N-shaped phosphorus doping hydrogenated amorphous silicon layer, the resistivity of this layer is 1 102ωcm-7ⅹ102ωcm.
For example, when the second doped layer 232 is p-type boron doped amorphous silicon layer, its resistivity is up to 1 104ωcm-
5ⅹ104ω cm, can also be 1 104ωcm、2ⅹ104ωcm、3ⅹ104ωcm、4ⅹ104ωcm、5ⅹ104ωcm；?
When two doped layers 232 are N-shaped phosphorus doping amorphous silicon layer, its resistivity is up to 1 102ωcm-7ⅹ102ω cm, preferably 2
102ωcm-6ⅹ102ω cm, can also be 1 102ωcm、2ⅹ102ωcm、3ⅹ102ωcm、4ⅹ102ωcm、5ⅹ102ω
cm、6ⅹ102ωcm、7ⅹ102ωcm.Thus, improve the contact performance between emitter layer 23 and transparent conductive film layer, from
And improve the fill factor, curve factor of silicon heterogenous solaode.
In the specific implementation, in the above-mentioned silicon heterogenous solaode that this enforcement new embodiment provides, as Fig. 5 institute
Show, emitter layer 23 can also include: mix positioned at the 3rd between the first intrinsic hydrogenated amorphous silicon layer 22 and the first doped layer 231
Diamicton 233；
With the first doped layer 231 adaptably, the 3rd doped layer 233 can be the hydrogenated amorphous silicon carbon layer of doping type or doping type
Hydrogenated amorphous silica layer；And, the doping content of carbon or oxygen element is less than the 3rd doped layer in the first doped layer 231 doping
The doping content of carbon or oxygen element in 233.
Thus, the emitter layer 23 of the multiple structure in this utility model embodiment may include the first doped layer, second mixes
Diamicton and the 3rd doped layer；Wherein, the second doped layer is the amorphous silicon layer of the high-dopant concentration through reduction processing, the first doping
Layer and the 3rd doped layer can be the amorphous silicon layer of the high energy gap element that adulterates, such as carbon or oxygen element etc., and first mixes
The doping content of the carbon of diamicton doping or oxygen is less than the doping content of carbon or oxygen in the 3rd doping.Additionally, in order to realize and this reality
The setting of the doped layer of the same effect of emitter layer in the silicon heterogenous solaode being provided with new embodiment, here is not
Limit.
Additionally, in the above-mentioned silicon heterogenous solaode that this utility model embodiment provides, as shown in Figures 2 to 5,
Also include: be arranged on the first transparent conductive film layer 24 and first metal electrode 25 of emitter layer 23 top, and be successively set on
Second intrinsic hydrogenated amorphous silicon layer 26 of crystalline silicon substrate 21 backlight side, back of the body electric field layer 27, the second transparent conductive film layer 28 and second
Metal electrode 29.
In being embodied as, in the above-mentioned silicon heterogenous solaode that this utility model embodiment provides, first is saturating
Bright conductive film layer 24 and the second transparent conductive film layer 28 can be transparent conductive oxide film layer.For example, the first nesa coating
Layer 24 with second transparent conductive film layer 28 can adopt transparent conductive oxide (transparent conductive oxide,
Tco) thin film.Realized and transparent conductive film layer identical effect in this utility model embodiment using other materials, here is not done
Limit.Back of the body electric field layer 27 can be hydrogenated amorphous silicon layer.Realized and back of the body electric field layer in this utility model embodiment using other materials
Identical effect, here does not limit.The material of the first metal electrode 25 and the second metal electrode 29 can be silver-colored (ag) or copper
(cu) naturally it is also possible to be the other materials being capable of this utility model scheme, it is not limited thereto.
Following above-mentioned to the offer of this utility model embodiment taking the silicon heterogenous solaode of n-type crystalline silicon substrate as a example
The operation principle of silicon heterogenous solaode illustrates.
As shown in Fig. 2 the silicon heterogenous solaode providing for this example.Wherein n-type crystalline silicon substrate (nc-si) 21 can
Form pn-junction with p type emitter layer (pa-si:h/pa-sic:h) 23, produce built in field；Current-carrying can be produced under illumination condition
Son, and form back of the body electric field with the amorphous silicon material (na-si:h) 27 at the back side.
Wherein, emitter layer 23 is arranged at the incidence surface side of crystalline silicon substrate, as shown in Fig. 2 emitter layer 23 be set to many
Rotating fields, include the first p-type amorphous silicon layer 231 and the second p-type amorphous silicon layer 232 successively.
Further, the first p-type amorphous silicon layer 231 is the hydrogenated amorphous silicon layer of doping element-specific, and the element of doping is
Optical energy gap is more than the element of non-crystalline silicon.For example, doped chemical can be carbon or oxygen, and formation optical energy gap is larger, light
Relatively low hydrogenated amorphous silicon carbon layer pa-sic:h of absorptance or hydrogenated amorphous silicon carbon layer pa-siox:h are so that emitter stage
Absorbing amount reduces.Second p-type amorphous silicon layer 232 is hydrogenated amorphous silicon layer pa-si:h, reduces the suction of light by thickness thinning
Receive, improve the contact performance of itself and tco thin film 24 by improving boron doping concentration.
Thus, emitter layer 23 is set to pa-si:h/pa-sic:h or pa-si:h/pa-siox:h structure, with
The pa-si:h layer 232 of tco thin film 24 contact, is had higher boron doping concentration, electric conductivity is higher, can be formed with tco thin film 24
Ohmic contact, improves battery fill factor, curve factor；Pa-sic:h or pa-siox:h layer 231, has relatively low boron doping concentration, and relatively
Wide optical energy gap, relatively low absorptance, can prevent boron in boron heavy doping pa-si:h layer 232 from spreading to inside battery,
Improve battery short circuit electric current simultaneously, and then improve cell photoelectric conversion efficiency.
In practical application, the first p-type amorphous silicon layer 231, thickness range be 1-3nm, could be arranged to 1nm, 2nm,
3nm；Second p-type amorphous silicon layer 232, thickness range is 2-5nm, could be arranged to 2nm, 3nm, 4nm, 5nm；Passivation layer 22 and blunt
The material changing layer 27 can adopt intrinsic hydrogenated amorphous silicon material ia-si:h；First metal electrode 25 and the second metal electrode 29
Material can be for silver-colored (ag) or copper (cu) naturally it is also possible to be the other materials being capable of this utility model scheme, here is not
It is construed as limiting.
This utility model embodiment provides a kind of silicon heterogenous solaode with novel emission pole and photovoltaic module,
Including: crystalline silicon substrate, it is successively set on the first intrinsic hydrogenated amorphous silicon layer and the emitter layer of crystalline silicon substrate incident side；Wherein,
Emitter layer is multiple structure, comprising: on the first intrinsic hydrogenated amorphous silicon layer, the first doped layer setting gradually and second is mixed
Diamicton；First doped layer is the hydrogenated amorphous silicon carbon layer of doping type or the hydrogenated amorphous silica layer of doping type；Second doped layer is doping
Type hydrogenated amorphous silicon layer.Due to emitter layer being set to multiple structure, and will be thinning for the thickness of the second doped layer, reduce it
Absorption to light, thus improve the luminous flux inciding crystalline silicon substrate；Connect with transparent conductive film layer by improving in emitter layer
The doped chemical doping content of the second tactile doped layer so that emitter layer is improved with the contact performance of transparent conductive film layer, from
And lift the fill factor, curve factor of solaode.By prohibiting in doping in the first doped layer of the first intrinsic hydrogenated amorphous silicon layer
The higher carbon of bandwidth or oxygen element, reduce the absorptance of light, and then reduce the absorbtivity to light for the emitter layer, improve
The short circuit current of solaode；And the first doped layer can prevent the doped chemical of higher concentration in the second doped layer to battery
Diffusion inside, improves the opto-electronic conversion performance of solaode further.
Obviously, those skilled in the art can carry out various changes and modification without deviating from this practicality to this utility model
New spirit and scope.So, if of the present utility model these modification and modification belong to this utility model claim and
Within the scope of its equivalent technologies, then this utility model is also intended to comprise these changes and modification.
Claims (10)
1. a kind of silicon heterogenous solaode with novel emission pole is it is characterised in that include: crystalline silicon substrate, sets successively
Put in the first intrinsic hydrogenated amorphous silicon layer of described crystalline silicon substrate incident side and emitter layer；Wherein,
Described emitter layer is multiple structure, comprising: first setting gradually on the described first intrinsic hydrogenated amorphous silicon layer is mixed
Diamicton and the second doped layer；
Described first doped layer is the hydrogenated amorphous silicon carbon layer of doping type or the hydrogenated amorphous silica layer of doping type；
Described second doped layer is the doping type hydrogenated amorphous silicon layer through reduction processing.
2. as claimed in claim 1 silicon heterogenous solaode it is characterised in that described emitter layer thickness be 3-
8nm.
3. as claimed in claim 1 silicon heterogenous solaode it is characterised in that described first doped layer thickness be 1-
3nm, the thickness of described second doped layer is 2-5nm.
4. as claimed in claim 1 silicon heterogenous solaode it is characterised in that described crystalline silicon substrate be n-type crystalline silicon
During substrate,
Described first doped layer is p-type boron doped hydrogenated amorphous silicon carbon-coating or p-type boron doped hydrogenated amorphous silicon oxygen layer；
Described second doped layer is p-type boron doped hydrogenated amorphous silicon layer；
Or, when described crystalline silicon substrate is p-type crystalline silicon substrate,
Described first doped layer is the hydrogenated amorphous silicon carbon layer of N-shaped phosphorus doping or the hydrogenated amorphous silica layer of N-shaped phosphorus doping；
Described second doped layer is N-shaped phosphorus doping hydrogenated amorphous silicon layer.
5. as claimed in claim 4 silicon heterogenous solaode it is characterised in that described first doped layer and described second
The doped chemical of doped layer is boron or phosphorus.
6. as claimed in claim 5 silicon heterogenous solaode it is characterised in that doped chemical in described first doped layer
Doping content be less than described second doped layer in doped chemical doping content.
7. as claimed in claim 6 silicon heterogenous solaode it is characterised in that when described second doped layer be p-type boron
During doped hydrogenated amorphous silicon layer, its resistivity is 1x104ωcm-5x104ωcm；
When described second doped layer is N-shaped phosphorus doping hydrogenated amorphous silicon layer, its resistivity is 1x102ωcm-7x102ωcm.
8. as claimed in claim 1 silicon heterogenous solaode it is characterised in that described emitter layer also includes: be located at
The 3rd doped layer between described first intrinsic hydrogenated amorphous silicon layer and described first doped layer；
Described 3rd doped layer is the hydrogenated amorphous silicon carbon layer of doping type or the hydrogenated amorphous silica layer of doping type；
Described first doped layer doping in carbon or oxygen element doping content be less than described 3rd doped layer in carbon or
The doping content of oxygen element.
9. as claimed in claim 1 silicon heterogenous solaode it is characterised in that also including: be arranged on described emitter stage
First transparent conductive film layer of layer top and the first metal electrode, and be successively set on described crystalline silicon substrate backlight side second
Levy hydrogenated amorphous silicon layer, back of the body electric field layer, the second transparent conductive film layer and the second metal electrode.
10. a kind of photovoltaic module is it is characterised in that include thering is novel emission pole as described in any one of claim 1-9
Silicon heterogenous solaode.
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| CN114566561A (en) * | 2020-11-27 | 2022-05-31 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and manufacturing method thereof |
| CN114628543A (en) * | 2020-11-27 | 2022-06-14 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and manufacturing method thereof |
| US11973151B2 (en) | 2021-02-09 | 2024-04-30 | Tongwei Solar (Chengdu) Co., Ltd. | HJT cell having high photoelectric conversion efficiency and preparation method therefor |
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