CN205752103U - The equipment of preparation GaN epitaxy sheet - Google Patents
The equipment of preparation GaN epitaxy sheet Download PDFInfo
- Publication number
- CN205752103U CN205752103U CN201620300986.9U CN201620300986U CN205752103U CN 205752103 U CN205752103 U CN 205752103U CN 201620300986 U CN201620300986 U CN 201620300986U CN 205752103 U CN205752103 U CN 205752103U
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- equipment
- gan
- epitaxy sheet
- gan epitaxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model proposes a kind of equipment preparing GaN epitaxy sheet, the equipment with multiple reaction chamber is provided, nucleating layer is fixed on a reaction chamber indoor growing, cushion containing Ga element is fixed on another chamber tumor growth, in can being effectively prevented reaction chamber, other thin layer quality are impacted by residue volatilization melt back, thus improve the crystal mass of GaN epitaxial layer.
Description
Technical field
This utility model relates to field of manufacturing semiconductor devices, particularly relates to a kind of equipment preparing GaN epitaxy sheet.
Background technology
GaN base LED is since early 1990s commercialization, through the development of twenties years, has begun to comprehensively
Enter general illumination field, along with the further expansion of LED range of application, each field to the luminous efficiency of LED, service life and
The indexs such as cost performance propose the highest requirement.The indexs such as the luminous efficiency of GaN base LED, service life and cost performance without
One is not closely bound up with its substrate used.Sapphire Substrate and silicon carbide substrates are the two the most main of current GaN base LED component
Stream substrate.
Sapphire Substrate production technology relative maturity, chemical stability are good, mechanical strength is high, but its poor thermal conductivity, unfavorable
Raising LED service life；And be not easy to develop to large scale direction.Silicon carbide substrates is good conductor electrically and thermally, and tool
Having the advantage that chemical stability is good, have critical role in technical field of semiconductor illumination, but its price is high, cost performance is relatively
Difference.
Because the two shortcoming, it is proposed that use silicon as substrate.With Sapphire Substrate and silicon carbide substrates phase
Ratio, first, silicon substrate is the good conductor of electricity, it is possible to achieve electric current is in the internal longitudinal flow of LED chip, such that it is able to pass through to increase
The light-emitting area of LED improves its luminous efficiency；Secondly, silicon substrate is again the good conductor of heat, can imitate by increasing the heat radiation of LED
Fruit improves its service life；Finally, silicon substrate not only low cost, and can develop to large scale direction, and be expected to by it is big
The advantage of size combines with the automation equipment of integrated circuit industry, reduces its production cost, improves its cost performance further.
So, silicon substrate is considered as the following LED substrate having most development potentiality, but, silicon substrate and GaN epitaxial layer it
Between there is bigger lattice mismatch and thermal stress mismatch, growth GaN epitaxial layer before, need to be formed on a silicon substrate nucleation
Layer and cushion are for regulating the lattice mismatch between silicon substrate and GaN epitaxial layer and thermal stress mismatch, in order at silicon substrate
The GaN epitaxial layer of upper formation better quality.
But, the reaction chamber growing GaN epitaxial layer has a small amount of Ga or GaN residual, Ga or GaN of residual is follow-up
Batch forms the melt back that can volatilize during nucleating layer to the surface of silicon substrate, reacts, and this not only affects nucleating layer
With the growth of cushion, also can cause the decline of GaN epitaxial layer surface quality and crystal mass, thus have a strong impact on LED chip
Yield.
Utility model content
One of the purpose of this utility model is to provide a kind of equipment preparing GaN epitaxy sheet, to solve the Ga unit of melt back
The problem that the GaN epitaxy sheet crystal mass that element and substrate react and cause declines.
In order to solve the problems referred to above, the utility model proposes a kind of equipment preparing GaN epitaxy sheet, be used for preparing GaN
Epitaxial wafer, including m reaction chamber, wherein m is natural number, and m >=2；Also include n transmission chamber, be connected to m reaction chamber
Between, it is used for transmitting support substrate, wherein n is natural number, and n < m；Also include i mechanical arm, each described transmission chamber
Interior at least provided with a mechanical arm, wherein i is natural number.
Further, in the equipment of described preparation GaN epitaxy sheet, the equipment of described preparation GaN epitaxy sheet is
MOCVD。
Further, in the equipment of described preparation GaN epitaxy sheet, the equipment of described preparation GaN epitaxy sheet includes 2
Reaction chamber, the respectively first reaction chamber and the second reaction chamber, described first reaction chamber is used for being formed nucleating layer, described
Second reaction chamber is used for being formed cushion and described GaN epitaxial layer, and described GaN epitaxy sheet also includes being formed at described cushion
The GaN epitaxial layer on surface.
Further, in the equipment of described preparation GaN epitaxy sheet, the equipment of described preparation GaN epitaxy sheet includes 3
Reaction chamber, the respectively first reaction chamber, the second reaction chamber and the 3rd reaction chamber, described first reaction chamber is used for shape
Becoming nucleating layer, described second reaction chamber is used for being formed cushion, and described 3rd reaction chamber is used for forming described GaN epitaxy
Layer, described GaN epitaxy sheet also includes the GaN epitaxial layer being formed at described buffer-layer surface.
Compared with prior art, the beneficial effects of the utility model are mainly reflected in: provide and have multiple reaction chamber
Equipment, is fixed on nucleating layer a reaction chamber indoor growing, is fixed in another cavity by the cushion containing Ga element
Growth, in can being effectively prevented reaction chamber, other thin layer quality are impacted by residue volatilization melt back, thus improve
The crystal mass of GaN epitaxial layer.
Accompanying drawing explanation
Fig. 1 is the flow chart of this utility model a kind of GaN epitaxy sheet manufacture method；
Fig. 2 is the structural representation of the equipment preparing GaN epitaxy sheet in this utility model embodiment one；
Fig. 3 to Fig. 7 is the structural representation in this utility model embodiment one in the manufacturing process of GaN epitaxy sheet；
Fig. 8 is the generalized section after this utility model GaN epitaxy sheet completes；
Fig. 9 is the structural representation of the equipment preparing GaN epitaxy sheet in this utility model embodiment two；
Figure 10 to Figure 16 is the structural representation in this utility model embodiment two in the manufacturing process of GaN epitaxy sheet.
Detailed description of the invention
Below in conjunction with schematic diagram, the equipment of preparation GaN epitaxy sheet of the present utility model is described in more detail, its
In illustrate preferred embodiment of the present utility model, it should be appreciated that those skilled in the art can revise described here practicality
Novel, and still realize advantageous effects of the present utility model.Therefore, description below is appreciated that for people in the art
Member's is widely known, and is not intended as restriction of the present utility model.
In order to clear, whole features of practical embodiments are not described.In the following description, it is not described in detail known function
And structure, because they can make this utility model chaotic due to unnecessary details.Will be understood that in any practical embodiments
Exploitation in, it is necessary to make a large amount of implementation detail to realize the specific objective of developer, such as according to relevant system or relevant business
The restriction of industry, is changed into another embodiment by an embodiment.Additionally, it should think this development be probably complicated and
Time-consuming, but it is only routine work to those skilled in the art.
Referring to the drawings this utility model the most more particularly described below in the following passage.According to following explanation and power
Profit claim, advantage of the present utility model and feature will be apparent from.It should be noted that, accompanying drawing all uses the form simplified very much
And all use non-ratio accurately, only in order to purpose convenient, aid illustration this utility model embodiment lucidly.
As it is shown in figure 1, this utility model provides the manufacture method of a kind of GaN epitaxy sheet, including step:
S100: providing equipment, described equipment includes m reaction chamber, and wherein m is natural number, and m >=2；
S200: provide and support substrate, described support substrate is placed in the first reaction chamber, and in the first reaction chamber
Form nucleating layer；
S300: will be formed with the support substrate transport of described nucleating layer in the second reaction chamber, and at the second reaction chamber
Room is formed the cushion containing Ga element.
The present invention uses the equipment comprising more than 2 reaction chambers, and nucleating layer is fixed on a reaction chamber indoor growing,
Cushion containing Ga element is fixed on another chamber tumor growth, residue volatilization in reaction chamber can be effectively prevented
Other thin layer quality are impacted by melt back, thus improve the crystal mass of GaN epitaxial layer.
The GaN epitaxy sheet that this utility model provides is described in detail below in conjunction with Fig. 2 to Figure 15 and two specific embodiments
Manufacture method and preparation GaN epitaxy sheet equipment:
Embodiment one
As shown in Figure 2, it is proposed that a kind of equipment preparing GaN epitaxy sheet, including m reaction chamber and n transmission chamber, its
Middle m, n are natural number, and m>=2, n<m；M=2, n=1,2 reaction chamber is respectively the first reaction chamber in the present embodiment
21 and the second reaction chamber 22,1 transmission chamber 10 between the first reaction chamber 21 and the second reaction chamber 22；Wherein, often
Individual reaction chamber is independent mutually when reacting, and is independent of each other；Additionally, the equipment of preparation GaN epitaxy sheet also includes i machine
Tool arm, wherein i is natural number, and in the present embodiment, i is 1, is i.e. provided with a mechanical arm in transmission chamber 10 (not shown
Go out), in other embodiments beyond the present embodiment, each described transmission intracavity is at least provided with a mechanical arm.Machinery
Arm can be used in being supported the transmission of substrate, (will support substrate from a reaction for the transition carried out in transmittance process
Chamber puts support substrate temporarily during being transferred to another reaction chamber), it is possible to incoming 2 reactions of substrate will be supported as requested
Any one in chamber.In other embodiments of the present invention, a transmission intracavity can also arrange multiple mechanical arm, many
Individual mechanical arm can transmit multiple support substrate simultaneously, improves work efficiency.
In the present embodiment, the equipment of described preparation GaN epitaxy sheet can be MOCVD (Metal-OrGaNic Chemical
Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) equipment.In other embodiments of the present invention, it is also possible to
The thinking of the present invention is applied in the equipment preparing HEMT epitaxial wafer to other.
The method of work of the equipment of the present embodiment is discussed in detail below in conjunction with Fig. 3 to Fig. 9.
Concrete, as it is shown on figure 3, first, it is provided that one supports substrate 30, and described support substrate 30 is transferred to described the
In one reaction chamber 21, for forming nucleating layer；Wherein, described support substrate 30 is silicon substrate；
As shown in Figure 4, then, the first reaction chamber 21 is utilized to support the upper surface of substrate 30 at the first reaction chamber 21
Middle formation nucleating layer 31, it is preferred that the material of described nucleating layer 31 is at least one in AlN, Al or Al2O3, it is preferred that institute
The material stating nucleating layer 31 is AlN；
As shown in Figure 5 and Figure 6, after formation completes stratum nucleare 31, support substrate 30 is taken out by mechanical arm, and through described
In transmission chamber 10 transmission extremely described second reaction chamber 22；
Please continue to refer to Fig. 6, the second reaction chamber 22 is utilized to form cushion 32, described cushion 32 on nucleating layer 31
Being formed at the surface of described nucleating layer 31, the material of described cushion 32 includes the element in III A race and V A race, such as, include
The mixture of AlGaN or GaN and AlGaN, in the present embodiment, cushion 32 is preferably AlGaN.
As background technology is mentioned, in the deposition process of cushion 32, in reaction chamber, generally remain the residuals such as Ga
Thing, if form nucleating layer in same reaction chamber, before not forming nucleating layer, the Ga meeting melt back of residual is to supporting lining
The surface at the end 30 also reacts, and causes the GaN epitaxy tablet quality being subsequently formed the best.
Therefore, the utility model proposes is fixed in a reaction chamber formation by difference cushion 32, can avoid
The problems referred to above, improve the quality of GaN epitaxy sheet.
As it is shown in fig. 7, after having formed cushion 32, described in the second reaction chamber 22, the surface of cushion 32 is formed
GaN epitaxial layer, described GaN epitaxial layer includes N-type GaN epitaxial layer 33, active layer 34 and p-type GaN epitaxial layer 35 successively, such as Fig. 8
Shown in.
This enforcement row MOCVD by 2 chambers, is fixed on growth in the first reaction chamber 21 by nucleating layer 31, will be slow
Rush layer 32 and GaN epitaxial layer is fixed on growth in the second reaction chamber 22, such that it is able to residual in being effectively prevented reaction chamber
The impact that the compound of thing such as Ga or Ga and doped chemical such as carbon or ferrum melt back bring, and the reciprocal effect of each chamber, and then
Improve the crystal mass of GaN epitaxy sheet.
Embodiment two
Refer to Fig. 9, the present embodiment is with the difference of embodiment one: in the present embodiment, and the MOCVD provided includes
3 reaction chambers, the respectively first reaction chamber the 21, second reaction chamber 22 and the 3rd reaction chamber 23,3 reaction chambers are altogether
With a transmission chamber 10.
During preparing described GaN epitaxy sheet, form nucleating layer 31, cushion 32 all identical with embodiment one (such as figure
Shown in 10 to Figure 13), do not repeat them here, be specifically referred to embodiment one.Except for the difference that, in the present embodiment, formed
After cushion 32, support substrate 30 is taken out by mechanical arm, as shown in figure 14；And through the transmission of described transmission chamber 10 to described
In 3rd reaction chamber 23, as shown in figure 15；Formation GaN epitaxial layer in the 3rd reaction chamber 23, as shown in figure 16, thus shape
Become GaN epitaxy sheet as shown in Figure 8.
Additionally, in other embodiments, it is also possible to include multiple transmission chamber, each transmission chamber being equipped with a mechanical hand
Arm, each transmission chamber is each responsible at least one reaction chamber such that it is able to improve utilization rate of equipment and installations, it is also possible to avoid reaction chamber
Room is more causes a transmission chamber cannot support the problem of transmission of substrate by reasonable arrangement.
To sum up, in the equipment of the preparation GaN epitaxy sheet provided in this utility model embodiment, it is provided that there is multiple reaction chamber
The equipment of room, is fixed on nucleating layer a reaction chamber indoor growing, the cushion containing Ga element is fixed on another chamber
Tumor growth, in can being effectively prevented reaction chamber, other thin layer quality are impacted by residue volatilization melt back, thus
Improve the crystal mass of GaN epitaxial layer.
Describe as a example by there are 2 and 3 reaction chambers the most respectively the GaN epitaxy sheet of the present invention manufacture method and
The equipment of preparation GaN epitaxy sheet, it should be appreciated that the quantity of described reaction chamber is not limited to 2 or 3, it is also possible to be 4
Above.Additionally, this equipment can also include multiple transmission chamber, being equipped with a mechanical arm, each transmission in each transmission chamber
Chamber is each responsible at least one reaction chamber such that it is able to improve utilization rate of equipment and installations, it is also possible to avoid that reaction chamber is more to be caused
One transmission chamber cannot support the problem of transmission of substrate by reasonable arrangement.
Above are only preferred embodiment of the present utility model, this utility model is not played any restriction effect.
Any person of ordinary skill in the field, in the range of without departing from the technical solution of the utility model, to this utility model
The technical scheme disclosed and technology contents make the variations such as any type of equivalent or amendment, all belong to without departing from this utility model
The content of technical scheme, within still falling within protection domain of the present utility model.
Claims (4)
1. prepare an equipment for GaN epitaxy sheet, be used for preparing GaN epitaxy sheet, it is characterised in that include m reaction chamber, its
Middle m is natural number, and m >=2；Also include n transmission chamber, be connected between m reaction chamber, be used for transmitting support substrate, its
Middle n is natural number, and n < m；Also include i mechanical arm, each described transmission intracavity at least provided with a mechanical arm, its
Middle i is natural number.
2. the equipment preparing GaN epitaxy sheet as claimed in claim 1, it is characterised in that the equipment of described preparation GaN epitaxy sheet
For MOCVD.
3. the equipment preparing GaN epitaxy sheet as claimed in claim 1, it is characterised in that the equipment of described preparation GaN epitaxy sheet
Including 2 reaction chambers, the respectively first reaction chamber and the second reaction chamber, described first reaction chamber is used for forming nucleation
Layer, described second reaction chamber is used for being formed cushion and described GaN epitaxial layer, and described GaN epitaxy sheet also includes being formed at institute
State the GaN epitaxial layer of buffer-layer surface.
4. the equipment preparing GaN epitaxy sheet as claimed in claim 1, it is characterised in that the equipment of described preparation GaN epitaxy sheet
Including 3 reaction chambers, the respectively first reaction chamber, the second reaction chamber and the 3rd reaction chamber, described first reaction chamber
Room is used for being formed nucleating layer, and described second reaction chamber is used for being formed cushion, and described 3rd reaction chamber is used for being formed described
GaN epitaxial layer, described GaN epitaxy sheet also includes the GaN epitaxial layer being formed at described buffer-layer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620300986.9U CN205752103U (en) | 2016-04-11 | 2016-04-11 | The equipment of preparation GaN epitaxy sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620300986.9U CN205752103U (en) | 2016-04-11 | 2016-04-11 | The equipment of preparation GaN epitaxy sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205752103U true CN205752103U (en) | 2016-11-30 |
Family
ID=57375007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620300986.9U Active CN205752103U (en) | 2016-04-11 | 2016-04-11 | The equipment of preparation GaN epitaxy sheet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205752103U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742160A (en) * | 2016-04-11 | 2016-07-06 | 杭州士兰微电子股份有限公司 | Fabrication method of GaN epitaxial wafer and device for fabricating GaN epitaxial wafer |
-
2016
- 2016-04-11 CN CN201620300986.9U patent/CN205752103U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742160A (en) * | 2016-04-11 | 2016-07-06 | 杭州士兰微电子股份有限公司 | Fabrication method of GaN epitaxial wafer and device for fabricating GaN epitaxial wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103337573B (en) | The epitaxial wafer of semiconductor light-emitting-diode and manufacture method thereof | |
| CN108336203A (en) | A kind of gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN104952986B (en) | A kind of preparation method of GaN base white light LEDs epitaxial structure | |
| CN103794469A (en) | Preparation method of gallium nitride film layer and substrate | |
| CN105023979A (en) | A GaN-based LED epitaxial wafer and a manufacturing method thereof | |
| CN102244162A (en) | Method for preparing light emitting diode | |
| CN106328777A (en) | Light emitting diode stress release layer epitaxial growth method | |
| CN108346725A (en) | A kind of gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN103296161B (en) | A kind of GaN base LED superlattice buffer layer structure and preparation method thereof | |
| CN205752103U (en) | The equipment of preparation GaN epitaxy sheet | |
| CN105720154B (en) | A kind of LED epitaxial wafer and its manufacturing method | |
| CN102465334A (en) | Method for growing GaN-based LED epitaxial layer | |
| CN107482095A (en) | A kind of LED epitaxial growth methods | |
| CN105742160A (en) | Fabrication method of GaN epitaxial wafer and device for fabricating GaN epitaxial wafer | |
| CN104064644B (en) | The quantum well structure of LED, its manufacture method and include its LED | |
| CN103137801A (en) | Structure for forming epitaxial layers on diamond substrate and manufacturing method thereof | |
| CN105679898A (en) | LED epitaxial structure with warpage adjusting structure layer and growth method thereof | |
| CN205680660U (en) | Prepare the equipment of HEMT epitaxial wafer | |
| CN106711297B (en) | A kind of growing method of GaN base light emitting epitaxial wafer | |
| CN109755362A (en) | A kind of iii-nitride light emitting devices of high-luminous-efficiency | |
| CN105789391B (en) | GaN base LED epitaxial structure and its manufacturing method | |
| CN104810446B (en) | A kind of GaN base light emitting epitaxial wafer and preparation method thereof | |
| CN105633232B (en) | A kind of GaN base LED epitaxial structure and preparation method thereof with GaN buffer layer substrate | |
| CN104733584A (en) | Three-dimensional LED semiconductor chip with multiple light-out surfaces and high brightness | |
| CN207765474U (en) | GaN base LED component |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |