CN104064644B - The quantum well structure of LED, its manufacture method and include its LED - Google Patents
The quantum well structure of LED, its manufacture method and include its LED Download PDFInfo
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses the quantum well structure of a kind of LED, its manufacture method and include its LED extension.Wherein, this quantum well structure includes: a GaN barrier layer, is arranged in LED in n-type GaN layer；First cushion, is arranged in a GaN barrier layer, and the first cushion includes the first InGaN layer and the first GaN layer being arranged alternately；2nd GaN barrier layer, is arranged on the first cushion；Second cushion, is arranged in the 2nd GaN barrier layer, and the second cushion includes the second InGaN layer and the second GaN layer being arranged alternately；Mqw light emitting layer, is arranged on the second cushion, and mqw light emitting layer includes that the concentration of In in the 3rd InGaN layer being arranged alternately and the 3rd GaN layer, and the 3rd InGaN layer is respectively greater than the concentration of In in the concentration of In in the second InGaN layer and the first InGaN layer.In this quantum well structure, the crystal mass of mqw light emitting layer is improved.
Description
Technical field
The present invention relates to technical field of semiconductor illumination, in particular to quantum well structure, its manufacture method of a kind of LED
And include its LED.
Background technology
Light emitting diode (LED) as a kind of efficiently, environmental protection and green New Solid lighting source, have that volume is little, weight
Gently, life-span length, reliability is high and uses the advantages such as low in energy consumption so that it is extensively applied.Especially, along with LED industry
Fast development, the range of application of green light LED gradually expands, and is widely used in the large-scale billboard of indoor and outdoor, traffic light, backlight
The every field such as source (computer, mobile phone display screen), fixed color illumination system.LED product market part relevant with green glow
Volume is also expanding year by year, and market is more and more higher to the performance requirement of green light LED.
Fig. 1 is the cross-sectional view of existing GaN base LED, and this LED includes along away from substrate 10 '
The GaN nucleating layer 20 ' that sets gradually in surface direction, u-shaped GaN layer 30 ', n-type GaN layer 40 ', quantum well structure
50 ' and p-type GaN layer 60 ', and quantum well structure 50 ' includes along setting successively away from the direction of n-type GaN layer 40 '
The GaN barrier layer 51 ' put, shallow quantum well layer 52 ' and mqw light emitting layer 53 '.Wherein, shallow quantum well layer 52 ' includes handing over
For the InGaN layer arranged and GaN layer, mqw light emitting layer 53 ' also includes InGaN layer and the GaN layer being arranged alternately, and
In InGaN layer in mqw light emitting layer 53 ', In concentration is higher than the concentration of In in the first InGaN layer in shallow quantum well layer 52 '.
Form the method for this LED usually: use MOCVD (Metal Organic Vapor extension) on substrate 10 '
One layer of GaN nucleating layer 20 ' of epitaxial growth, then regrowth u-shaped GaN layer 30 ' (GaN of undoped), it is therefore an objective to carry
The quality of high subsequent epitaxial crystal, the most successively growing n-type GaN, quantum well structure 50 ' and p-type GaN, from
And form LED as shown in Figure 1.
In above-mentioned LED, due in the InGaN layer in mqw light emitting layer the concentration of In than InGaN in shallow quantum well layer
In Ceng, the concentration of In is high so that mqw light emitting layer the restriction effect in electronics and hole is significantly greater than shallow quantum well layer to electronics and
The restriction effect in hole, so that electronics and hole can occur compound in mqw light emitting layer and produce light.But,
In InGaN layer, the concentration of In is the highest, and the growth temperature of InGaN layer is the lowest, and in formed InGaN layer, lattice quality is the poorest, scarce
Fall into the most.Therefore, the lattice quality of formed mqw light emitting layer is poor, defect is more, thus reduces the luminous effect of LED
Rate.Simultaneously as the crystal lattice difference (i.e. lattice mismatch) between mqw light emitting layer and shallow quantum well layer and GaN barrier layer is relatively big,
Thus cause quantum well structure produces bigger internal stress, bigger polarity effect and serious electron-hole wave functions space
Segregation phenomenon, and reduce further the luminous efficiency of LED.
Especially for green light LED, the concentration (22%～35%) of the In in green light LED is than the concentration of In in blue-ray LED
(15%～22%) is much higher.Therefore, in green light LED, the growth temperature of InGaN layer is lower, brilliant in formed InGaN layer
Lattice quality is worse；In green light LED, in quantum well structure, internal stress is bigger simultaneously, polarity effect is bigger, electron-hole wave functions is empty
Between segregation phenomenon more serious, so that the luminous efficiency of formed green light LED is lower.
Therefore, how to reduce lattice defect in mqw light emitting layer, to improve the crystal mass of mqw light emitting layer；And how
Reduce mqw light emitting layer and shallow quantum well layer, the polarity effect produced between GaN barrier layer and n-type GaN layer due to lattice mismatch
It is spatially separating phenomenon with electron-hole wave functions, to improve the combined efficiency of electronics and hole, and then improves the luminous effect of LED
Rate, becomes and needs one of target of capturing in LED field badly.
Summary of the invention
It is desirable to provide the quantum well structure of a kind of LED, its manufacture method and include its LED, with raising amount
The crystal mass of sub-trap luminescent layer, and reduce internal stress in quantum well structure, thus improve the combined efficiency in electronics and hole, and
Improve the luminous efficiency of LED.
In order to solve the problems referred to above, the invention provides the quantum well structure of a kind of LED, this quantum well structure includes: first
GaN barrier layer, is arranged in LED in n-type GaN layer；First cushion, is arranged in a GaN barrier layer, the first buffering
Layer includes the first InGaN layer and the first GaN layer being arranged alternately；2nd GaN barrier layer, is arranged on the first cushion；The
Two cushions, are arranged in the 2nd GaN barrier layer, and the second cushion includes the second InGaN layer and the 2nd GaN being arranged alternately
Layer；Mqw light emitting layer, is arranged on the second cushion, and mqw light emitting layer includes the 3rd InGaN layer and being arranged alternately
In three GaN layer, and the 3rd InGaN layer, the concentration of In is respectively greater than concentration and first InGaN layer of In in the second InGaN layer
The concentration of middle In.
Further, in above-mentioned quantum well structure, during in the first InGaN layer, the concentration of In is less than the second InGaN layer, In's is dense
Degree, in the second InGaN layer, the concentration of In is less than the concentration of In in the 3rd InGaN layer.
Further, in above-mentioned quantum well structure, in the first InGaN layer, the concentration of In is 1 × 1019～3 × 1019atoms/cm3；
In second InGaN layer, the concentration of In is 3.5 × 1019～5 × 1019atoms/cm3；In 3rd InGaN layer the concentration of In be 3.5 ×
1020～5 × 1020atoms/cm3。
Further, in above-mentioned quantum well structure, the first cushion includes 3～5 groups of second InGaN layer and second being arranged alternately
GaN layer；Second cushion includes 6～9 groups of second InGaN layer being arranged alternately and the second GaN layer；Mqw light emitting layer includes
6～9 groups of the 3rd InGaN layer being arranged alternately and the 3rd GaN layer.
Further, in above-mentioned quantum well structure, in the first cushion, the thickness of each first InGaN layer is 2.5～5nm, each
The thickness of one GaN layer is 30～40nm；In second cushion, the thickness of each second InGaN layer is 2.5～3nm, each 2nd GaN
The thickness of layer is 9～13nm；In mqw light emitting layer, the thickness of each 3rd InGaN layer is 2.5～3nm, and each 3rd GaN layer is thick
Degree is 9～13nm.
Further, in above-mentioned quantum well structure, the thickness of a GaN barrier layer is 50～80nm；The thickness of the 2nd GaN barrier layer
It is 30～60nm.
Further, in above-mentioned quantum well structure, LED is green light LED.
Present invention also offers the manufacture method of the quantum well structure of a kind of LED, this manufacture method includes: N-shaped in the led
A GaN barrier layer is formed in GaN layer；Forming the first cushion in a GaN barrier layer, the first cushion includes being alternatively formed
The first InGaN layer and the first GaN layer；First cushion is formed the 2nd GaN barrier layer；Shape in the 2nd GaN barrier layer
Become the second InGaN layer and the second GaN layer that the second cushion, the second cushion include being alternatively formed；Shape on the second cushion
Becoming mqw light emitting layer, mqw light emitting layer includes the 3rd InGaN layer and the 3rd GaN layer being alternatively formed, and the 3rd InGaN
The concentration of In and the concentration of In in the first InGaN layer during in Ceng, the concentration of In is respectively greater than the second InGaN layer.
Further, in above-mentioned manufacture method, temperature be 850～900 DEG C, pressure be to grow under conditions of 100～300torr
Oneth GaN barrier layer；Alternating growth the first InGaN layer and the first GaN layer under conditions of keeping temperature and pressure constant；?
The 2nd GaN barrier layer is grown under conditions of keeping temperature and pressure constant；, temperature constant at holding pressure is the bar of 790～805 DEG C
Grow the second InGaN layer under part, and keeping that pressure is constant, temperature grow the second GaN layer under conditions of being 850～870 DEG C；
Keeping that pressure is constant, temperature be 750～760 DEG C under conditions of growth regulation three InGaN layer, and pressure is constant, temperature keeping
Growth regulation three GaN layer under conditions of being 850～870 DEG C.
Further, in above-mentioned manufacture method, in the step forming the first cushion, it is alternatively formed 3～5 group of the oneth InGaN
Layer and the first GaN layer, wherein in the first InGaN layer, the concentration of In is 1 × 1019～3 × 1019atoms/cm3；Forming second
In the step of cushion, it is alternatively formed 6～9 group of second InGaN layer and the second GaN layer, wherein In in the second InGaN layer
Concentration is 3.5 × 1019～5 × 1019atoms/cm3；In the step forming mqw light emitting layer, it is alternatively formed 6～9 group the 3rd
InGaN layer and the 3rd GaN layer, wherein in the 3rd InGaN layer, the concentration of In is 3.5 × 1020～5 × 1020atoms/cm3。
Further, in above-mentioned manufacture method, in the step forming the first cushion, form that thickness is 2.5～5nm each the
One InGaN layer, and form each first GaN layer that thickness is 30～40nm；In the step forming the second cushion, form thickness
Degree is each second InGaN layer of 2.5～3nm, and forms each second GaN layer that thickness is 9～13nm；Send out forming SQW
In the step of photosphere, form each 3rd InGaN layer that thickness is 2.5～3nm, and form each 3rd GaN that thickness is 9～13nm
Layer.
Further, in above-mentioned manufacture method, in the step forming a GaN barrier layer, form that thickness is 50～80nm the
One GaN barrier layer；In the step forming the 2nd GaN barrier layer, form the 2nd GaN barrier layer that thickness is 30～60nm.
Present invention also offers a kind of LED, including along away from the GaN nucleating layer set gradually on substrate surface direction,
U-shaped GaN layer, n-type GaN layer, quantum well structure and p-type GaN layer, wherein quantum well structure is the amount that the present invention is above-mentioned
Sub-well structure.
Application technical scheme, the invention provides a kind of by a GaN barrier layer, the first cushion, the 2nd GaN base
The quantum well structure of the LED of layer, the second cushion and mqw light emitting layer composition, and the first InGaN layer in the first cushion
The 3rd InGaN that in the second InGaN layer in the concentration of middle In and the second cushion, the concentration of In is respectively less than in mqw light emitting layer
The concentration of In in Ceng.Owing in the 3rd InGaN layer, the concentration of In is respectively greater than the concentration and second of In in the first InGaN layer
The concentration of In in InGaN layer, causes the growth temperature of the 3rd InGaN layer to be respectively lower than the first InGaN layer and the 2nd InGaN
The growth temperature of layer, and cause that the 3rd InGaN layer is poorer than the lattice quality of the first InGaN layer and the second InGaN layer, defect
Many, and this first cushion and the second cushion enable to electronics and hole and are distributed more uniform in mqw light emitting layer, and
Improve electronics and hole recombination rate in mqw light emitting layer, thus decrease the setting of the 3rd InGaN layer in mqw light emitting layer
Number, and then improve the crystal mass of mqw light emitting layer, and improve the luminous efficiency of LED.Simultaneously as first
Internal stress between InGaN layer and the second InGaN layer and the 3rd InGaN layer is released, thus decreases in quantum well structure
Internal stress, polarity effect and electron-hole wave functions are spatially separating phenomenon, and further increase the luminous efficiency of LED.
Accompanying drawing explanation
The accompanying drawing of the part constituting the present invention is used for providing a further understanding of the present invention, the illustrative examples of the present invention and
Its explanation is used for explaining the present invention, is not intended that inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the cross-sectional view of existing LED；
Fig. 2 shows the cross-sectional view of the quantum well structure of the LED that embodiment of the present invention provided；
Fig. 3 shows the schematic flow sheet of the manufacture method of the quantum well structure of the LED that embodiment of the present invention provided；
Fig. 4 shows in the manufacture method of the quantum well structure of the LED provided in embodiment of the present invention, n in the led
The cross-sectional view of the matrix after a GaN barrier layer is formed in type GaN layer；
Fig. 5 shows the cross-sectional view of the matrix after forming the first cushion in the GaN barrier layer shown in Fig. 4；
Fig. 6 shows the cross-sectional view of the matrix after forming the 2nd GaN barrier layer on the first cushion shown in Fig. 5；
Fig. 7 shows the cross-sectional view of the matrix after forming the second cushion in the 2nd GaN barrier layer shown in Fig. 6；
And
Fig. 8 shows the cross-sectional view of the matrix after forming mqw light emitting layer on the second cushion shown in Fig. 7.
Detailed description of the invention
It should be noted that in the case of not conflicting, the embodiment in the application and the feature in embodiment can mutual groups
Close.Describe the application below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
It should be noted that term used herein above merely to describe detailed description of the invention, and be not intended to restricted root according to this Shen
Illustrative embodiments please.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to
Including plural form, additionally, it should be understood that, when use belongs to " comprising " and/or " including " in this manual, its
Indicate existing characteristics, step, operation, device, assembly and/or combinations thereof.
For the ease of describing, space relative terms here can be used, as " ... on ", " ... top ",
" at ... upper surface ", " above " etc., be used for describing such as a device shown in the figure or feature and other devices or
The spatial relation of feature.It should be appreciated that space relative terms is intended to comprise except the described in the drawings orientation of device
Outside different azimuth in use or operation.Such as, if the device in accompanying drawing is squeezed, then it is described as " at other devices
Part or structure above " or " other devices or structure on " device after will be positioned as " other devices or construct under
Side " or " under other devices or structure ".Thus, exemplary term " ... top " can include " ... on
Side " and " in ... lower section " two kinds of orientation.This device can also other different modes location (90-degree rotation or be in its other party
Position), and space used herein above is described relatively make respective explanations.
The GaN that term p-type GaN layer is formed after referring to doping Mg or doping Al or Mg and Al that simultaneously adulterate in the present invention
Layer；The GaN layer that term N-type GaN layer is formed after referring to doping Si；The U-shaped GaN layer of term refers to unadulterated GaN layer.
From background technology, the crystal mass of existing mqw light emitting layer is poor, and in quantum well structure, internal stress is relatively big,
So that the luminous efficiency of LED is relatively low.The present inventor studies for the problems referred to above, it is proposed that a kind of LED's
Quantum well structure.As in figure 2 it is shown, this quantum well structure includes: a GaN barrier layer 10, it is arranged at N-shaped GaN in LED
On layer；First cushion 20, is arranged in a GaN barrier layer 10, and the first cushion 20 includes first be arranged alternately
InGaN layer 21 and the first GaN layer 23；2nd GaN barrier layer 30, is arranged on the first cushion 20；Second cushion 40,
Being arranged in the 2nd GaN barrier layer 30, the second cushion 40 includes the second InGaN layer 41 and the second GaN layer being arranged alternately
43；Mqw light emitting layer 50, is arranged on the second cushion 40, and mqw light emitting layer 50 includes the 3rd be arranged alternately
In InGaN layer 51 and the 3rd GaN layer 53, and the 3rd InGaN layer 51, the concentration of In is respectively greater than the second InGaN layer 41
The concentration of In in the concentration of middle In and the first InGaN layer 21.
In the quantum well structure of above-mentioned LED, owing in the 3rd InGaN layer 51, the concentration of In is respectively greater than the first InGaN layer
The concentration of In and the concentration of In in the second InGaN layer 41 in 21, cause the growth temperature of the 3rd InGaN layer 51 respectively lower than
First InGaN layer 21 and the growth temperature of the second InGaN layer 41, and cause the 3rd InGaN layer 51 to the first InGaN layer
21 and second the lattice quality of InGaN layer 41 poor, defect is many, and this first cushion 20 and the second cushion 40 can make
Obtain electronics and hole is distributed more uniform in mqw light emitting layer 50, and improve electronics and hole in mqw light emitting layer 50
Recombination rate, thus decrease the number that arranges of the 3rd InGaN layer 51 in mqw light emitting layer 50, and then improve SQW and send out
The crystal mass of photosphere 50, and improve the luminous efficiency of LED.Simultaneously as the first InGaN layer 21 and the 2nd InGaN
Internal stress between layer 41 and the 3rd InGaN layer 51 is released, thus decreases internal stress in quantum well structure, polarization effect
Answer and electron-hole wave functions is spatially separating phenomenon, and further increase the luminous efficiency of LED.
In the quantum well structure of above-mentioned LED, as long as meeting the concentration of In in the 3rd InGaN layer 51 to be respectively greater than the 2nd InGaN
The concentration of In in the concentration of In and the first InGaN layer 21 in layer 41.It is further preferable that In in the first InGaN layer 21
Concentration less than the concentration of In in the second InGaN layer 41, in the second InGaN layer 41, the concentration of In is less than the 3rd InGaN layer
The concentration of In in 51.Now, the planted agent between the first InGaN layer 21 and the second InGaN layer 41 and the 3rd InGaN layer 51
Power is discharged further, thus further increases the luminous efficiency of LED.
Those skilled in the art has the ability to set first InGaN layer the 21, second InGaN layer 41 and according to the teachings of the present invention
The concentration of In in 3rd InGaN layer 51.In order to further increase the luminous efficiency of LED, in one preferred embodiment
In, in the first InGaN layer 21, the concentration of In is 1 × 1019～3 × 1019atoms/cm3；In second InGaN layer 41, In's is dense
Degree is 3.5 × 1019～5 × 1019atoms/cm3；In 3rd InGaN layer 51, the concentration of In is 3.5 × 1020～5 ×
1020atoms/cm3。
The present invention is by increasing by the first cushion 20 and the second cushion 40 in quantum well structure, thus decreases quantum well radiation
In layer 50, the 3rd InGaN layer 51 and the 3rd GaN layer 53 arranges number.Those skilled in the art can be according to the present invention
Teaching set the first cushion the 20, second cushion 40 and concrete structure of mqw light emitting layer 50.Preferably, first delays
Rush layer 20 and include 3～5 groups of second InGaN layer 41 and second GaN layer 43 being arranged alternately；Second cushion 40 includes 6～9
The second InGaN layer 41 and the second GaN layer 43 that group is arranged alternately；Mqw light emitting layer 50 includes 6～9 groups of be arranged alternately
Three InGaN layer 51 and the 3rd GaN layer 53.And in the prior art, mqw light emitting layer 50 includes that 10～16 groups are arranged alternately
The 3rd InGaN layer 51 and the 3rd GaN layer 53.Visible, the 3rd InGaN in the mqw light emitting layer 50 that the present invention provides
The number that arranges of layer 51 is reduced, thus further increases the crystal mass of mqw light emitting layer 50, and improves further
The luminous efficiency of LED.
In above-mentioned quantum well structure, the thickness of each layer can be set according to actual process demand.In one preferred embodiment
In, in the first cushion 20, the thickness of each first InGaN layer 21 is 2.5～5nm, and the thickness of each first GaN layer 23 is
30～40nm；In second cushion 40, the thickness of each second InGaN layer 41 is 2.5～3nm, the thickness of each second GaN layer 43
It is 9～13nm；In mqw light emitting layer 50, the thickness of each 3rd InGaN layer 51 is 2.5～3nm, and each 3rd GaN layer 53 is thick
Degree is 9～13nm.Now, the luminous efficiency of LED is further improved.It is further preferable that the thickness of a GaN barrier layer 10
Degree is 50～80nm；The thickness of the 2nd GaN barrier layer 30 is 30～60nm.
The LED being made up of above-mentioned quantum well structure can be green glow.Concentration (22%～35%) due to the In in green light LED
More much higher than the concentration (15%～22%) of In in blue-ray LED, therefore in green light LED, the growth temperature of InGaN layer is lower,
In formed InGaN layer, lattice quality is worse.And use the quantum well structure of the LED that the present invention provides significantly more to improve
The crystal mass of mqw light emitting layer 50 in green light LED, and further increase the luminous efficiency of green light LED.Certainly,
The quantum well structure that the present invention provides is also applied for other LED, such as blue-ray LED.
Present invention also offers the manufacture method of the quantum well structure of a kind of LED.As it is shown on figure 3, this manufacture method includes:
LED is formed in n-type GaN layer a GaN barrier layer 10；A GaN barrier layer 10 is formed the first cushion 20, the
One cushion 20 includes the first InGaN layer 21 and the first GaN layer 23 being alternatively formed；First cushion 20 is formed the
Two GaN barrier layer 30；Forming the second cushion 40 in the 2nd GaN barrier layer 30, the second cushion 40 includes being alternatively formed
Second InGaN layer 41 and the second GaN layer 43；Second cushion 40 is formed mqw light emitting layer 50, quantum well radiation
Layer 50 includes the 3rd InGaN layer 51 and the 3rd GaN layer 53 being alternatively formed, and in the 3rd InGaN layer 51, the concentration of In is divided
Great Yu the concentration of In and the concentration of In in the first InGaN layer 21 in the second InGaN layer 41.
Above-mentioned manufacture method is by sequentially forming GaN barrier layer the 10, first cushion the 20, the 2nd GaN barrier layer 30, second
Cushion 40 and mqw light emitting layer 50, thus define the quantum well structure of LED.Due to In in the 3rd InGaN layer 51
Concentration be respectively greater than the concentration of In in the concentration of In in the first InGaN layer 21 and the second InGaN layer 41, cause the 3rd InGaN
The growth temperature of layer 51 is respectively lower than the first InGaN layer 21 and growth temperature of the second InGaN layer 41, and causes the 3rd
The lattice quality of InGaN layer 51 to the first InGaN layer 21 and the second InGaN layer 41 is poor, defect is many, and this first cushion
20 and second cushion 40 enable to electronics and hole and be distributed more uniform in mqw light emitting layer 50, and improve electronics and
Hole is recombination rate in mqw light emitting layer 50, thus decreases the formation of the 3rd InGaN layer 51 in mqw light emitting layer 50
Number, and then improve the crystal mass of mqw light emitting layer 50, and improve the luminous efficiency of LED.Simultaneously as first
Internal stress between InGaN layer 21 and the second InGaN layer 41 and the 3rd InGaN layer 51 is released, thus decreases quantum
In well structure, internal stress, polarity effect and electron-hole wave functions are spatially separating phenomenon, and further increase the luminescence of LED
Efficiency.
Illustrative embodiments according to the application is described in more detail below.But, these illustrative embodiments can be by
Multiple different form is implemented, and should not be construed to be limited solely to embodiments set forth herein.It is to be understood that
Being to provide these embodiments is so that disclosure herein is thorough and complete, and by these illustrative embodiments
Design is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expands the thickness in layer and region,
And make to be presented with like reference characters identical device, thus description of them will be omitted.
Fig. 4 to Fig. 8 shows the manufacture method of the quantum well structure of the LED that the present invention provides, and obtains after each step
The cross-sectional view of matrix.Below in conjunction with Fig. 4 to Fig. 8, further illustrate the SQW knot of the LED that the present invention provides
The manufacture method of structure.
First, forming a GaN barrier layer 10 in the led in n-type GaN layer, its structure is as shown in Figure 4.Preferred in one
Embodiment in, formed a GaN barrier layer 10 step include: be passed through trimethyl gallium and NH3 to MOCVD reative cell,
Temperature be 850～900 DEG C, pressure be to grow a GaN barrier layer 10 under conditions of 100～300torr.
Those skilled in the art can be by controlling trimethyl gallium and the flow of NH3 and response time etc. to adjust a GaN
The thickness of barrier layer 10.Preferably, in the step forming a GaN barrier layer 10, form that thickness is 50～80nm first
GaN barrier layer 10.
Then, forming the first cushion 20 in a GaN barrier layer 10, the first cushion 20 includes first be alternatively formed
InGaN layer 21 and the first GaN layer 23, and then form basal body structure as shown in Figure 5.In a preferred embodiment,
This step includes: be passed through reacting gas to MOCVD reative cell, alternating growth the under conditions of keeping temperature and pressure constant
One InGaN layer 21 and the first GaN layer 23.Wherein, grow the reacting gas of the first InGaN layer 21 can be triethyl-gallium,
Trimethyl indium and ammonia, the reacting gas growing the first GaN layer 23 can be trimethyl gallium and ammonia.
In above-mentioned first InGaN layer 21, the concentration of In can be set according to the teachings of the present invention.Preferably, an InGaN
In layer 21, the concentration of In is 1 × 1019～3 × 1019atoms/cm3.Meanwhile, those skilled in the art can also be according to the present invention
Teaching set the composition of the first cushion 20 and thickness.Preferably.In the step forming the first cushion 20, alternately shape
Become 3～5 group of second InGaN layer 41 and the second GaN layer 43, wherein form each first InGaN layer 21 that thickness is 2.5～5nm,
And form each first GaN layer 23 that thickness is 30～40nm.
It follows that form the 2nd GaN barrier layer 30 on the first cushion 20, and then form basal body structure as shown in Figure 6.
Preferably, the step forming the 2nd GaN barrier layer 30 includes: be passed through trimethyl gallium and ammonia to MOCVD reative cell, is protecting
Hold temperature and pressure constant under conditions of grow the 2nd GaN barrier layer 30.Those skilled in the art can be according to teachings of the present application
Set the thickness of the 2nd GaN barrier layer 30.Preferably, the thickness of the 2nd GaN barrier layer 30 is 30～60nm.
It follows that form the second cushion 40 in the 2nd GaN barrier layer 30, the second cushion 40 includes second be alternatively formed
InGaN layer 41 and the second GaN layer 43, and then form basal body structure as shown in Figure 7.Form the step of the second cushion 40
Can be: be passed through reacting gas that, temperature constant at holding pressure grows the second InGaN layer under conditions of being 790～805 DEG C
41, and keeping that pressure is constant, temperature grow the second GaN layer 43 under conditions of being 850～870 DEG C.
The reacting gas forming the second InGaN layer 41 can be triethyl-gallium, trimethyl indium and ammonia, forms the second GaN layer
The reacting gas of 43 can be triethyl-gallium and ammonia.Those skilled in the art have the ability by control reacting gas proportioning with
Adjust the concentration of In in the second InGaN layer 41.Preferably, in the second InGaN layer 41, the concentration of In is 3.5 × 1019～5 ×
1019atoms/cm3。
Meanwhile, those skilled in the art can also be by controlling flow and the response time etc. of reacting gas to adjust second
InGaN layer 41 and the thickness of the second GaN layer 43.In a preferred embodiment, in the step forming the second cushion 40
In Zhou, form each second InGaN layer 41 that thickness is 2.5～3nm, and form each second GaN layer that thickness is 9～13nm
43。
Finally, forming mqw light emitting layer 50 on the second cushion 40, mqw light emitting layer 50 includes the 3rd be alternatively formed
In InGaN layer 51 and the 3rd GaN layer 53, and the 3rd InGaN layer 51, the concentration of In is respectively greater than the second InGaN layer 41
The concentration of In in the concentration of middle In and the first InGaN layer 21, and then form basal body structure as shown in Figure 8.Preferred in one
Embodiment in, the step forming mqw light emitting layer 50 includes: be passed through reacting gas, and pressure is constant, temperature is keeping
Growth regulation three InGaN layer 51 under conditions of 750～760 DEG C, and keeping that pressure is constant, under conditions of temperature is 850～870 DEG C
Growth regulation three GaN layer 53.
The reacting gas forming the 3rd InGaN layer 51 can be triethyl-gallium, trimethyl indium and ammonia, forms the 3rd GaN layer
The reacting gas of 53 can be triethyl-gallium and ammonia.Those skilled in the art have the ability by control reacting gas proportioning with
Adjust the concentration of In in the 3rd InGaN layer 51.Preferably, in the 3rd InGaN layer 51, the concentration of In is 3.5 × 1019～5 ×
1019atoms/cm3。
Meanwhile, those skilled in the art can also be by controlling flow and the response time etc. of reacting gas to adjust the 3rd
InGaN layer 51 and the thickness of the 3rd GaN layer 53.In a preferred embodiment, mqw light emitting layer 50 is being formed
Step in, form each 3rd InGaN layer 51 that thickness is 2.5～3nm, and form each 3rd GaN that thickness is 9～13nm
Layer 53.
The structures such as above-mentioned quantum well structure and N-shaped epitaxial layer, p-type epitaxial layer collectively form LED.Form LED extension
The method of sheet can have method common in the art.For example, formed LED method include: along away from
The surface of substrate sequentially forms GaN cushion, u-shaped GaN, N-shaped epitaxial layer quantum well structure and p-type epitaxial layer.
As example, the one that formation GaN cushion, u-shaped GaN, N-shaped epitaxial layer and p-type epitaxial layer are given below is optional
Embodiment.
Formation GaN cushion, u-shaped GaN, the step of N-shaped epitaxial layer include: Sapphire Substrate is positioned over MOCVD anti-
Answer in room, in temperature under the conditions of 1050～1100 DEG C, be passed through high-purity H of 100 standard liter/min2Process Sapphire Substrate
10～20 minutes；Cooling the temperature to 520～570 DEG C, growth thickness is the GaN cushion of 20～45nm on a sapphire substrate；
It is warming up to 1000～1150 DEG C, GaN cushion grows the u-shaped GaN layer of 1.5～2.5 μm；Be cooled to 950～
1000 DEG C, u-shaped GaN layer grows the gallium nitride layer of 50～100nm；It is warming up to 1100～1130 DEG C, on gallium nitride layer
The n-type GaN layer of the doping Si of growth 2.0～3.5 μm, wherein the doping content of Si is 6E18～1.5E19atom/cm3。
The step forming p-type epitaxial layer includes: being cooled to 750～780 DEG C, growth thickness is the low-temperature p-type GaN of 50～90nm
Layer；Being cooled to 940～960 DEG C, alternating growth AlGaN and InGaN, periodicity is 10, and growth gross thickness is 80～120nm
Electronic barrier layer；Being warming up to 950～980 DEG C, growth thickness is 90～140nm thick high temperature p-type layer；It is cooled to
750～760 DEG C, the InGaN contact layer of growth 3～6nm thickness；It is cooled to 700～750 DEG C, in a nitrogen atmosphere insulation 15～25
Minute.
Present invention also offers a kind of LED, including along away from the GaN nucleating layer set gradually on substrate surface direction,
U-shaped GaN layer, n-type GaN layer, quantum well structure and p-type GaN layer, wherein quantum well structure is the amount that the present invention is above-mentioned
Sub-well structure.In this LED, the crystal mass of mqw light emitting layer is improved, and internal stress, pole in quantum well structure
Change effect and electron-hole wave functions is spatially separating phenomenon and is reduced, thus improve the luminous efficiency of LED.
It is described in more detail below according to an illustrative embodiment of the invention.But, these illustrative embodiments can be by
Multiple different form is implemented, and should not be construed to be limited solely to embodiments set forth herein.It is to be understood that
Being to provide these embodiments is so that disclosure of the invention is thorough and complete, and by these illustrative embodiments
Design is fully conveyed to those of ordinary skill in the art.
Quantum well structure and the making side of LED of the LED that the present invention provides is further illustrated below in conjunction with embodiment
Method.
Embodiment 1
Present embodiments provide the manufacture method of a kind of LED, comprise the following steps:
Form GaN cushion, u-shaped GaN, N-shaped epitaxial layer, comprise the following steps: Sapphire Substrate is positioned over MOCVD
In reative cell, in temperature under the conditions of 1100 DEG C, it is passed through high-purity H of 100 standard liter/min2Process Sapphire Substrate 20 points
Clock；Cooling the temperature to 570 DEG C, growth thickness is the GaN cushion of 45nm on a sapphire substrate；It is warming up to 1150 DEG C,
GaN cushion grows the u-shaped GaN layer of 2.5 μm；It is cooled to 1000 DEG C, u-shaped GaN layer grows 100nm's
Gallium nitride layer；It is warming up to 1130 DEG C, gallium nitride layer grows the n-type GaN layer of the doping Si of 3.5 μm, wherein the mixing of Si
Miscellaneous concentration is 1.5E19atom/cm3；
Forming quantum well structure, comprise the following steps: be cooled to 900 DEG C, on N-shaped GaN, growth thickness is the first of 60nm
GaN barrier layer；Temperature keeps constant, in a GaN barrier layer 4 group of first InGaN layer of alternating growth and the first GaN layer with
Forming In concentration of component in the first cushion, and the first InGaN layer is 2 × 1019atoms/cm3, the thickness of each first InGaN layer
Degree is 3nm, and the thickness of each first GaN layer is 30nm；Temperature keeps constant, and on the first cushion, growth thickness is
The 2nd GaN barrier layer of 40nm；In the 2nd GaN barrier layer, 8 group of second InGaN layer of alternating growth and the second GaN layer are to be formed
Second cushion, wherein, temperature constant at holding pressure grows the second InGaN layer, and is keeping pressure under conditions of being 800 DEG C
Power is constant, temperature grows the second GaN layer under conditions of being 850 DEG C, and in the second InGaN layer, In concentration of component is
4×1019atoms/cm3；The thickness of each second InGaN layer is 3nm, and the thickness of each second GaN layer is 10nm；Alternately shape
Become 6 group of the 3rd InGaN layer and the 3rd GaN layer to form mqw light emitting layer, wherein grow under conditions of temperature is 750 DEG C
3rd InGaN layer, and keeping that pressure is constant, temperature be 850 DEG C under conditions of growth regulation three GaN layer, the 3rd InGaN layer
The concentration of middle In is 4 × 1019atoms/cm3, and the thickness of each InGaN layer is 3nm, and the thickness of each GaN layer is 10nm；
Forming p-type epitaxial layer, comprise the following steps: be cooled to 780 DEG C, growth thickness is the low-temperature p-type GaN layer of 90nm；
Being cooled to 960 DEG C, 10 groups of AlGaN and InGaN of alternating growth, to grow gross thickness for 120nm electronic barrier layer；It is warming up to
980 DEG C, growth thickness is the high temperature p-type layer of 140nm；Being cooled to 760 DEG C, growth thickness is 6nm InGaN contact layer；Fall
Temperature, to 700 DEG C, is incubated 25 minutes in a nitrogen atmosphere.
Comparative example 1
This comparative example provides the manufacture method of a kind of LED, comprises the following steps:
Form GaN cushion, u-shaped GaN, N-shaped epitaxial layer, comprise the following steps: Sapphire Substrate is positioned over MOCVD
In reative cell, in temperature under the conditions of 1100 DEG C, it is passed through high-purity H of 100 standard liter/min2Process Sapphire Substrate 20 points
Clock；Cooling the temperature to 570 DEG C, growth thickness is the GaN cushion of 45nm on a sapphire substrate；It is warming up to 1150 DEG C,
GaN cushion grows the u-shaped GaN layer of 2.5 μm；It is cooled to 1000 DEG C, u-shaped GaN layer grows 100nm's
Gallium nitride layer；It is warming up to 1130 DEG C, gallium nitride layer grows the n-type GaN layer of the doping Si of 3.5 μm, wherein the mixing of Si
Miscellaneous concentration is 1.5E19atom/cm3；
Form quantum well structure, comprise the following steps: lowering the temperature 900 DEG C, growth thickness is the GaN of 60nm on N-shaped GaN
Layer is as GaN barrier layer；Temperature keeps constant, grows 4 groups of InGaN/GaN to form shallow quantum well layer in GaN barrier layer；
It is alternatively formed 16 groups of InGaN layer and GaN layer to form mqw light emitting layer, wherein grows under conditions of temperature is 750 DEG C
InGaN layer, and keeping that pressure is constant, temperature grow GaN layer under conditions of being 85 DEG C 0, in InGaN layer, the concentration of In is
4 × 1019atoms/cm3, the thickness of each InGaN layer is 3nm, and the thickness of each GaN layer is 10nm；
Forming p-type epitaxial layer, comprise the following steps: be cooled to 780 DEG C, growth thickness is the low-temperature p-type GaN layer of 90nm；
Being cooled to 960 DEG C, 10 groups of AlGaN and InGaN of alternating growth, to grow gross thickness for 120nm electronic barrier layer；It is warming up to
980 DEG C, growth thickness is the high temperature p-type layer of 140nm；Being cooled to 760 DEG C, growth thickness is 6nm InGaN contact layer；Fall
Temperature, to 700 DEG C, is incubated 25 minutes in a nitrogen atmosphere.
Test: the product that embodiment 1 and comparative example 1 obtain is made the chip of 07mil × 09mil, and carries out performance test.
Test structure asks for an interview table 1.
Table 1
| LOP(mcd) | VRD(V) | IR | ESD(2000V) | ESD(4000V) | |
| Comparative example 1 | 293 | 40 | 0.013 | 85% | 68% |
| Embodiment 1 | 318 | 44 | 0.01 | 94% | 83% |
As it can be seen from table 1 embodiment 1 obtain the brightness (LOP) of chip, backward voltage (VRD), electric leakage (IR),
It is above the chip that comparative example 1 obtains with antistatic effect (ESD).It could therefore be concluded that use the present invention to provide
The photoelectric properties of the LED chip of quantum well structure growth are more superior, and security performance is higher.
As can be seen from the above embodiments, the example that the present invention is above-mentioned achieves following technique effect:
(1) the invention provides a kind of by a GaN barrier layer, the first cushion, the 2nd GaN barrier layer, the second cushion and
The quantum well structure of LED of mqw light emitting layer composition, and the concentration and the of In in the first InGaN layer in the first cushion
The concentration of In in the 3rd InGaN layer that in the second InGaN layer in two cushions, the concentration of In is respectively less than in mqw light emitting layer.
Due to In dense during the concentration of In is respectively greater than the concentration of In in the first InGaN layer and the second InGaN layer in the 3rd InGaN layer
Degree, causes the growth temperature of the 3rd InGaN layer to be respectively lower than the first InGaN layer and the growth temperature of the second InGaN layer, and leads
Cause that the 3rd InGaN layer is poorer than the lattice quality of the first InGaN layer and the second InGaN layer, defect is many, and this first cushion and
Second cushion enables to electronics and hole and is distributed more uniform in mqw light emitting layer, and improves electronics and hole at quantum
Recombination rate in trap luminescent layer, thus decrease the 3rd InGaN layer in mqw light emitting layer number is set, and then improve quantum
The crystal mass of trap luminescent layer, and improve the luminous efficiency of LED.
(2) simultaneously as the internal stress between the first InGaN layer and the second InGaN layer and the 3rd InGaN layer is released,
Thus decrease internal stress in quantum well structure, polarity effect and electron-hole wave functions and be spatially separating phenomenon, and carry further
The high luminous efficiency of LED.
These are only the preferred embodiments of the present invention, be not limited to the present invention, those skilled in the art is come
Saying, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, any amendment of being made, equivalent
Replacement, improvement etc., should be included within the scope of the present invention.
Claims (13)
1. the quantum well structure of a LED, it is characterised in that described quantum well structure includes:
Oneth GaN barrier layer (10), is arranged in described LED in n-type GaN layer；
First cushion (20), is arranged in a described GaN barrier layer (10), and described first cushion (20) includes
The first InGaN layer (21) being arranged alternately and the first GaN layer (23)；
2nd GaN barrier layer (30), is arranged on described first cushion (20)；
Second cushion (40), is arranged in described 2nd GaN barrier layer (30), and described second cushion (40) includes
The second InGaN layer (41) being arranged alternately and the second GaN layer (43)；
Mqw light emitting layer (50), is arranged on described second cushion (40), and described mqw light emitting layer (50) wraps
Include the 3rd InGaN layer (51) and the 3rd GaN layer (53) being arranged alternately, and in described 3rd InGaN layer (51)
The concentration of In is respectively greater than In in the concentration of In in described second InGaN layer (41) and described first InGaN layer (21)
Concentration.
Quantum well structure the most according to claim 1, it is characterised in that the concentration of In in described first InGaN layer (21)
Less than the concentration of In in described second InGaN layer (41), in described second InGaN layer (41), the concentration of In is less than
The concentration of In in described 3rd InGaN layer (51).
Quantum well structure the most according to claim 2, it is characterised in that
In described first InGaN layer (21), the concentration of In is 1 × 1019～3 × 1019atoms/cm3；
In described second InGaN layer (41), the concentration of In is 3.5 × 1019～5 × 1019atoms/cm3；
In described 3rd InGaN layer (51), the concentration of In is 3.5 × 1020～5 × 1020atoms/cm3。
Quantum well structure the most according to claim 1, it is characterised in that
Described first cushion (20) includes 3～5 groups of described first InGaN layer (21) and described first being arranged alternately
GaN layer (23)；
Described second cushion (40) includes 6～9 groups of described second InGaN layer (41) and described second being arranged alternately
GaN layer (43)；
Described mqw light emitting layer (50) includes 6～9 groups of described 3rd InGaN layer (51) being arranged alternately and described
Three GaN layer (53).
Quantum well structure the most according to claim 4, it is characterised in that
In described first cushion (20), the thickness of each described first InGaN layer (21) is 2.5～5nm, each described first
The thickness of GaN layer (23) is 30～40nm；
In described second cushion (40), the thickness of each described second InGaN layer (41) is 2.5～3nm, each described second
The thickness of GaN layer (43) is 9～13nm；
In described mqw light emitting layer (50), the thickness of each described 3rd InGaN layer (51) is 2.5～3nm, each described
Three GaN layer (53) thickness is 9～13nm.
Quantum well structure the most according to any one of claim 1 to 5, it is characterised in that
The thickness of a described GaN barrier layer (10) is 50～80nm；
The thickness of described 2nd GaN barrier layer (30) is 30～60nm.
Quantum well structure the most according to claim 6, it is characterised in that described LED is green light LED.
8. the manufacture method of the quantum well structure of a LED, it is characterised in that described manufacture method includes:
A GaN barrier layer (10) is formed in n-type GaN layer in described LED；
In a described GaN barrier layer (10) upper formation the first cushion (20), described first cushion (20) includes handing over
For the first InGaN layer (21) formed and the first GaN layer (23)；
In described first cushion (20) upper formation the 2nd GaN barrier layer (30)；
In described 2nd GaN barrier layer (30) upper formation the second cushion (40), described second cushion (40) includes handing over
For the second InGaN layer (41) formed and the second GaN layer (43)；
Forming mqw light emitting layer (50) on described second cushion (40), described mqw light emitting layer (50) includes
In in the 3rd InGaN layer (51) being alternatively formed and the 3rd GaN layer (53), and described 3rd InGaN layer (51)
Concentration be respectively greater than In in the concentration of In in described second InGaN layer (41) and described first InGaN layer (21)
Concentration.
Manufacture method the most according to claim 8, it is characterised in that
Temperature be 850～900 DEG C, pressure be to grow a described GaN barrier layer (10) under conditions of 100～300torr；
First InGaN layer (21) and a described GaN described in alternating growth under conditions of keeping temperature and pressure constant
Layer (23)；
Described 2nd GaN barrier layer (30) is grown under conditions of keeping temperature and pressure constant；
, temperature constant at holding pressure grows described second InGaN layer (41), and is protecting under conditions of being 790～805 DEG C
Hold that pressure is constant, temperature grows described second GaN layer (43) under conditions of being 850～870 DEG C；
, temperature constant at holding pressure grows described 3rd InGaN layer (51), and is protecting under conditions of being 750～760 DEG C
Hold that pressure is constant, temperature grows described 3rd GaN layer (53) under conditions of being 850～870 DEG C.
Manufacture method the most according to claim 9, it is characterised in that
In the step forming described first cushion (20), it is alternatively formed the first InGaN layer (21) described in 3～5 groups
With described first GaN layer (23), in wherein said first InGaN layer (21), the concentration of In is 1 × 1019～3 ×
1019atoms/cm3；
In the step forming described second cushion (40), it is alternatively formed the second InGaN layer (41) described in 6～9 groups
With described second GaN layer (43), in wherein said second InGaN layer (41), the concentration of In is 3.5 × 1019～5 ×
1019atoms/cm3；
In the step forming described mqw light emitting layer (50), it is alternatively formed the 3rd InGaN layer (51) described in 6～9 groups
With described 3rd GaN layer (53), in wherein said 3rd InGaN layer (51), the concentration of In is 3.5 × 1020～5 ×
1020atoms/cm3。
11. manufacture methods according to claim 10, it is characterised in that
In the step forming described first cushion (20), form each described InGaN that thickness is 2.5～5nm
Layer (21), and form each described first GaN layer (23) that thickness is 30～40nm；
In the step forming described second cushion (40), form each described 2nd InGaN that thickness is 2.5～3nm
Layer (41), and form each described second GaN layer (43) that thickness is 9～13nm；
In the step forming described mqw light emitting layer (50), form each described 3rd InGaN that thickness is 2.5～3nm
Layer (51), and form each described 3rd GaN layer (53) that thickness is 9～13nm.
12. according to Claim 8 to the manufacture method according to any one of 11, it is characterised in that
In the step forming a described GaN barrier layer (10), form the described GaN that thickness is 50～80nm
Barrier layer (10)；
In the step forming described 2nd GaN barrier layer (30), form described 2nd GaN that thickness is 30～60nm
Barrier layer (30).
13. 1 kinds of LED, including along away from the GaN nucleating layer set gradually on substrate surface direction, u-shaped GaN layer, n
Type GaN layer, quantum well structure and p-type GaN layer, it is characterised in that described quantum well structure be claim 1 to
Quantum well structure according to any one of 7.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6153894A (en) * | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
| CN1659715A (en) * | 2002-08-19 | 2005-08-24 | Lg伊诺特有限公司 | Nitride semiconductor LED and fabrication method thereof |
| CN1802757A (en) * | 2003-10-15 | 2006-07-12 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device |
| JP2006310488A (en) * | 2005-04-27 | 2006-11-09 | Toyoda Gosei Co Ltd | Group iii nitride-based semiconductor light emitting device and its manufacturing method |
| CN102136536A (en) * | 2010-01-25 | 2011-07-27 | 亚威朗(美国) | Strain balanced light emitting device |
| CN102157648A (en) * | 2010-02-12 | 2011-08-17 | 株式会社东芝 | Semiconductor light emitting device |
| CN103346223A (en) * | 2013-06-06 | 2013-10-09 | 华灿光电股份有限公司 | Epitaxial wafer of light emitting diode |
-
2014
- 2014-06-30 CN CN201410307318.4A patent/CN104064644B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6153894A (en) * | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
| CN1659715A (en) * | 2002-08-19 | 2005-08-24 | Lg伊诺特有限公司 | Nitride semiconductor LED and fabrication method thereof |
| CN1802757A (en) * | 2003-10-15 | 2006-07-12 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device |
| JP2006310488A (en) * | 2005-04-27 | 2006-11-09 | Toyoda Gosei Co Ltd | Group iii nitride-based semiconductor light emitting device and its manufacturing method |
| CN102136536A (en) * | 2010-01-25 | 2011-07-27 | 亚威朗(美国) | Strain balanced light emitting device |
| CN102157648A (en) * | 2010-02-12 | 2011-08-17 | 株式会社东芝 | Semiconductor light emitting device |
| CN103346223A (en) * | 2013-06-06 | 2013-10-09 | 华灿光电股份有限公司 | Epitaxial wafer of light emitting diode |
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