CN205452302U - Solar cell and subassembly and system thereof - Google Patents
Solar cell and subassembly and system thereof Download PDFInfo
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- CN205452302U CN205452302U CN201620246237.2U CN201620246237U CN205452302U CN 205452302 U CN205452302 U CN 205452302U CN 201620246237 U CN201620246237 U CN 201620246237U CN 205452302 U CN205452302 U CN 205452302U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model relates to a solar cell and subassembly and system thereof. The utility model discloses a solar cell, including the solar cell base member, the positive surface of solar cell base member is provided with the metal wire, the metal wire with the solar cell base member is connected through silver, the edge on solar cell base member back of the body surface is provided with back main grid, and the metal wire of keeping away from back main grid extends the edge of solar cell base member, the length of back main grid is less than or equals 600: 1 with wide ratio. The beneficial effects are that: adopt the metal wire to replace current positive silver -colored main grid of battery piece and vice bars, not only reduced positive shading loss but also reduced the use cost who contains silver -colored thick liquids. Compare current positive metallization method, the utility model discloses can practice thrift general 50% the silver -colored thick liquids consumption that contains.
Description
Technical field
This utility model relates to technical field of solar batteries, is specifically related to a kind of solaode and assembly thereof and system.
Background technology
Solaode is a kind of semiconductor device that can convert solar energy into electrical energy.Wherein metallization is a committed step in manufacture of solar cells operation, and photo-generated carrier must could obtain effectively collection by the conductive electrode that metallization is formed.At present, method for metallising the most frequently used in volume production solaode is screen-printed metal slurry method, is starched by printing silver or is mixed aluminum paste, through high-temperature sintering process, forms the metallization possessing the functions such as electrical contact, electricity conduction, welding interconnection.In order to form good Ohmic contact and take into account solderability, the front surface of crystal silicon solar energy battery typically prints silver slurry or mixes aluminum paste, but silver slurry or to mix the price of aluminum paste general the most costly, causes the accounting in solaode manufacturing cost containing silver paste to remain high.Thus find and a kind of can reduce containing silver paste usage amount, simultaneously can meet again Ohmic contact and front-side metallization method that solderability requires becomes and reduces a key job of manufacture of solar cells cost.
On the other hand, monomer solaode directly can not use as the energy, it is necessary to could stably export electric energy after being connected and be tightly packaged into assembly by some cell series and parallels.The power of assembly to be typically less than the power summation preparing cell piece used by this block assembly, and the loss of power is greatly from welding kesistance and the resistance of welding itself.As a example by the short circuit current cell piece as 9A, its power lost on welding during preparing 60 chip modules is about 8W, and is the battery of 4.5A for short circuit current, and this numerical value is only 2W.Visible under Same Efficieney requires, use the cell piece of the low short circuit current power loss during package assembling little.
Summary of the invention
The purpose of this utility model is for the deficiencies in the prior art, it is provided that a kind of solaode and assembly thereof and system.Described solaode can significantly decrease the usage amount containing silver paste, thus reduces the production cost of solaode, provides corresponding series-mounting simultaneously, can reduce cell piece power loss during component package.The usage amount containing silver paste can also be significantly decreased, thus reduce the production cost of solaode.
This utility model provides a kind of solaode, and its technical scheme is:
A kind of solaode, including solaode matrix, the front surface of described solaode matrix is provided with metal wire, and described metal wire is connected by silver with described solaode matrix；The edge of described solaode matrix back surface is provided with back side main grid, extends the edge of solaode matrix away from the metal wire of back side main grid；The length of described back side main grid and wide ratio are less than or equal to 600: 1.
Wherein, described metal wire is silver-coated copper wire, aluminum steel or copper cash.
Wherein, the metal wire away from back side main grid extends the edge 6-10mm of solaode matrix.
Wherein, described back side main grid width 2-6mm.
Wherein, a diameter of 40-80 micron of described metal wire.
Wherein, described solaode matrix is p-type solaode matrix, and the back surface of described p-type solaode matrix is provided with back aluminium electrode.
Wherein, described solaode matrix is N-type solaode matrix, and the back surface of described N-type solaode matrix is provided with H type grid line.
This utility model additionally provides a kind of solar module, and including the front layer material being from top to bottom sequentially connected with, encapsulating material, solaode, encapsulating material, backboard, described solaode is above-mentioned a kind of solaode.
A kind of solar cell system, including the solar module of one or more than one series connection, described solar module is above-mentioned a kind of solar module.
Enforcement of the present utility model includes techniques below effect:
Technological merit of the present utility model is mainly reflected in: uses metal wire to replace the silver-colored main grid in existing cell piece front and secondary grid, not only reduces front shading loss but also decrease the use cost containing silver paste.Compare existing front-side metallization method, this utility model can save general 50% containing silver paste consumption.It addition, full wafer cell piece is cut into polylith baby battery sheet in metallization processes by this utility model, when follow-up concatenation makes assembly, its power loss is compared full wafer cell piece and will be significantly reduced.Applicant finds full wafer cell piece to be cut into 3 to 6 pieces of baby battery sheets in metallization processes through lot of experiments, and when follow-up concatenation makes assembly, its power loss is compared and cut into 2 or full wafer cell piece will be significantly reduced.As a example by cutting into 3, the power loss that this utility model is brought by concatenation when making assembly is compared full wafer cell piece and is reduced about 88%, compares and reduces about 56% when cutting into 2.
Accompanying drawing explanation
Fig. 1 is the solaode matrix structure schematic diagram in the preparation method step 2 printing of a kind of solaode of this utility model embodiment after main grid.
Fig. 2 be a kind of solaode of this utility model embodiment preparation method step 4 dicing after solaode front side of matrix structural representation after adhesiving metal line.
Fig. 3 be this utility model embodiment by solaode matrix concatenate after structure schematic diagram.
Fig. 4 be this utility model embodiment by solaode matrix concatenate after back side cross section structure schematic diagram.
1, solaode matrix；2, metal wire；3, back side main grid.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, this utility model is described in detail, it should be pointed out that described embodiment is intended merely to facilitate understanding of the present utility model, and it does not play any restriction effect.
See shown in Fig. 3 and Fig. 4, the present embodiment additionally provides a kind of solaode, and including solaode matrix, the front surface of described solaode matrix 1 is provided with metal wire 2, metal wire 2 is silver-coated copper wire, aluminum steel or copper cash, a diameter of 40-80 micron of metal wire 2.Described metal wire 2 is connected by silver with described solaode matrix 1；The edge of described solaode matrix 1 back surface is provided with back side main grid 3, back side main grid width 2-6mm；Metal wire away from back side main grid 3 extends the edge 6-10mm of solaode matrix.Solaode matrix 1 can be p-type solaode matrix, and the back surface of described p-type solaode matrix is provided with back aluminium electrode.Solaode matrix can be N-type solaode matrix, the back surface of described N-type solaode matrix is provided with H type grid line, the length of back side main grid and wide ratio are less than or equal to 600: 1, preferably 154: 1, it is also possible to select 100: 1,200: 1,300: 1,400: 1 and 600: 1.
See shown in Fig. 1 and Fig. 2, the preparation method of a kind of solaode of the present embodiment, comprise the following steps:
(1), solaode matrix is carried out pretreatment；
(2), using metal paste printing 3～the back side main grid 3 of 6 deciles at the back surface of solaode matrix 1 and dry, wherein back side main grid 3 is arranged on the edge of solaode matrix；Described back side main grid width 2-6mm；Described metal paste is silver slurry.
(3), use the back side main grid that cutter sweep (laser cutting machine) prints along step (2) by solaode matrix dicing；Preferably it is cut into four.
(4) front surface of the solaode matrix after, cutting is laid to be stained with and is mixed aluminum paste or the metal wire 2 of silver slurry and dry, wherein the metal wire away from back side main grid extends the edge of solaode matrix, and the metal wire 2 of extension is used for concatenating solaode matrix；Described metal wire 2 is silver-coated copper wire, aluminum steel or copper cash, a diameter of 40-80 micron of described metal wire 2, extends the edge 6-10mm of solaode matrix away from the metal wire of back side main grid.(5) the solaode matrix sintering, by step (4) obtained, the peak temperature of sintering is 850-950 DEG C；Complete the preparation of solaode.
The present embodiment uses metal wire to replace the silver-colored main grid in existing cell piece front and secondary grid, not only reduces front shading loss but also decrease the use cost containing silver paste.Compare existing front-side metallization method, this utility model can save general 50% containing silver paste consumption.It addition, full wafer cell piece is cut into polylith baby battery sheet in metallization processes by this utility model, when follow-up concatenation makes assembly, its power loss is compared full wafer cell piece and will be significantly reduced.Applicant finds full wafer cell piece to be cut into 3 to 6 pieces of baby battery sheets in metallization processes through lot of experiments, and when follow-up concatenation makes assembly, its power loss is compared and cut into 2 or full wafer cell piece will be significantly reduced.As a example by cutting into 3, the power loss that this utility model is brought by concatenation when making assembly is compared full wafer cell piece and is reduced about 88%, compares and reduces about 56% when cutting into 2.
Solaode matrix can be p-type solaode matrix, and the back surface of described p-type solaode matrix is provided with back aluminium electrode.Solaode matrix can be N-type solaode matrix, and the back surface of described N-type solaode matrix is provided with H type grid line.Following being described in detail with three specific embodiments, wherein embodiment 1 is the embodiment that p-type solaode matrix cuts three.Embodiment 2 is the embodiment that p-type solaode matrix cuts four.Embodiment 3 is the embodiment that N-type solaode matrix cuts three.In order to more clearly show the preparation technology of solaode, the preparation method of solaode has been made detailed narration by following embodiment.
Embodiment 1
The preparation technology of solaode:
(1), selecting solaode matrix, the present embodiment selects the P-type crystal silicon matrix of 156mm*156mm, and the surface of P-type crystal silicon matrix is made making herbs into wool process；The resistivity of P-type crystal silicon matrix is 0.5～15 Ω cm, preferably 1～5 Ω cm, and its thickness is 50～300 μm, preferably 80～200 μm；
(2), by the P-type crystal silicon matrix after step (1) process putting into and carry out phosphorus diffusion in industrial diffusion furnace, phosphorus source uses phosphorus oxychloride, and diffusion temperature is 800-900 DEG C, and the time is 60-120 minute.Sheet resistance value after phosphorus diffusion is 50-150 Ω/sqr, preferably 70-90 Ω/sqr.
(3), the P-type crystal silicon matrix after phosphorus diffusion is put in etching cleaning machine, remove phosphorus-diffused layer and the phosphorosilicate glass layer in front at the back side.
(4) the P-type crystal silicon matrix after, step (3) being processed is put in PECVD (plasma enhanced chemical vapor deposition) equipment, silicon nitride layer is plated at front surface, the thickness of silicon nitride layer is 65-80nm, and refractive index is 2.05-2.15.
(5), use silver slurry printed back main grid at back surface and dry.The back side main grid width 2-6mm, long 154mm, be arranged 3 in parallel, and its spacing is 52mm, and wherein the edge setting of P-type crystal silicon matrix is close on the long limit of a back side main grid.
(6), use aluminium paste printed back aluminum electrode at back surface and dry.
(7), use laser slicing machine step (6) to be processed after P-type crystal silicon matrix trisection cut into the baby battery sheet (as shown in dotted line in 1 in figure) of three pieces of 156mm*52mm, cut direction is parallel to back side main grid.
(8), the baby battery sheet front surface after step (7) is cut is laid and is stained with the metal wire of silver slurry and dries.Metal wire arranges 80 altogether, parallel to each other, and spacing is 1.95mm.The direction of metal wire is orthogonal with back side main grid.Metal wire is circular silver-coated copper wire, and a diameter of 40-80 micron, a length of 58-62mm, wherein the one end away from back side main grid is exposed beyond cell piece, the long 6-10mm in exposed portion.
(9), step (8) is processed after P-type crystal silicon matrix transmission enter belt sintering stove and be sintered, sintering peak temperature is 850-950 DEG C, i.e. completes the preparation of this utility model P-type crystal silicon battery.
The series-mounting of solaode:
As shown in Figure 3 and Figure 4, first on the back side main grid of cell piece, coat tin cream, then the front electrode i.e. silver-coated copper wire of first piece of baby battery sheet is pressed on the tin paste layer of second piece of baby battery sheet back side main grid, is heated to 183-250 degree and completes front electrode and the connection of back side main grid.The concatenation of polylith cell piece can be completed the step for of repetition.
Embodiment 2
The preparation technology of solaode:
(1), selecting solaode matrix, the present embodiment selects the P-type crystal silicon matrix of 156mm*156mm, and the surface of P-type crystal silicon matrix is made making herbs into wool process；The resistivity of P-type crystal silicon matrix is 0.5～15 Ω cm, preferably 1～5 Ω cm, and its thickness is 50～300 μm, preferably 80～200 μm；
(2), by the P-type crystal silicon matrix after step (1) process putting into and carry out phosphorus diffusion in industrial diffusion furnace, phosphorus source uses phosphorus oxychloride, and diffusion temperature is 800-900 DEG C, and the time is 60-120 minute.Sheet resistance value after phosphorus diffusion is 50-150 Ω/sqr, preferably 70-90 Ω/sqr.
(3), the P-type crystal silicon matrix after phosphorus diffusion is put in etching cleaning machine, remove phosphorus-diffused layer and the phosphorosilicate glass layer in front at the back side.
(4) the P-type crystal silicon matrix after, step (3) being processed is put in PECVD (plasma enhanced chemical vapor deposition) equipment, silicon nitride layer is plated at front surface, the thickness of silicon nitride layer is 65-80nm, and refractive index is 2.05-2.15.
(5), use silver slurry printed back main grid at back surface and dry.The back side main grid width 2-6mm, long 154mm, be arranged 4 in parallel, and its spacing is 39mm, and wherein the edge setting of P-type crystal silicon matrix is close on the long limit of a back side main grid.
(6), use aluminium paste printed back aluminum electrode at back surface and dry.
(7), using laser slicing machine that the P-type crystal silicon matrix quartering after step (6) process is cut into the baby battery sheet of four pieces of 156mm*39mm, cut direction is parallel to back side main grid.
(8), the baby battery sheet front surface after step (7) is cut is laid and is stained with the metal wire of silver slurry and dries.Metal wire arranges 80 altogether, parallel to each other, and spacing is 1.95mm.The direction of metal wire is orthogonal with back side main grid.Metal wire is circular silver-coated copper wire, and a diameter of 40-80 micron, a length of 45-49mm, wherein the one end away from back side main grid is exposed beyond cell piece, the long 6-10mm in exposed portion.
(9), step (8) is processed after P-type crystal silicon matrix transmission enter belt sintering stove and be sintered, sintering peak temperature is 850-950 DEG C, i.e. completes the preparation of this utility model P-type crystal silicon battery.
The series-mounting of solaode:
As shown in Figure 3 and Figure 4, on the back side main grid of cell piece, first attach conductive tape, then the front electrode i.e. silver-coated copper wire of first piece of baby battery sheet is pressed on the conductive tape of second piece of baby battery sheet back side main grid, completes front electrode and the connection of back side main grid.The concatenation of polylith cell piece can be completed the step for of repetition.
Embodiment 3
(1), selecting solaode matrix, the present embodiment selects the N-type crystalline silicon matrix of 156mm*156mm, and the front surface of N-type crystalline silicon matrix is made making herbs into wool process；The resistivity of N-type crystalline silicon matrix is 0.5～15 Ω cm, preferably 1～5 Ω cm；The thickness of N-type crystalline silicon matrix is 50～300 μm, preferably 80～200 μm；
(2), by the N-type crystalline silicon matrix after step (1) process putting into and making herbs into wool face carries out in industrial diffusion furnace boron diffusion, boron source uses Boron tribromide, and diffusion temperature is 920-1000 DEG C, and the time is 60-180 minute.Sheet resistance value after boron diffusion is 40-100 Ω/sqr, preferably 50-70 Ω/sqr.
(3), the silicon substrate after boron diffusion is put in etching cleaning machine, remove diffused layer of boron and the Pyrex layer in front at the back side.
(4) ion implantation apparatus N-type crystalline silicon matrix back side after step (3) processes, is used to inject phosphorus atoms and make annealing treatment.The peak temperature of annealing is 700～950 DEG C, and preferably 850～900 DEG C, annealing time is 30～200min, preferably 60～200min, and environment source of the gas is preferably N2 and O2.
(5), the N-type crystalline silicon matrix after step (4) process is put in cleaning machine, remove the oxide layer of front and back.
(6) the N-type crystalline silicon matrix after, step (5) being processed is put in PECVD (plasma enhanced chemical vapor deposition) equipment, silicon nitride layer is all plated at front and back, the thickness of front side silicon nitride silicon layer is 65-80nm, refractive index is 2.05-2.15, the thickness of back side silicon nitride silicon layer is 40-70nm, and refractive index is 2.15-2.25.
(7), using silver slurry print electrode and dry at back surface, its electrode pattern is H type grid line, wherein main grid live width 2-6mm, long 154mm, be arrangeding 3 in parallel, its spacing is 52mm, and wherein the edge setting of N-type crystalline silicon matrix is close on the long limit of a main grid.Secondary grid line live width 50um, long 154mm, parallel to each other, spacing is 1.55mm, arranges 100 altogether.
(8), using laser slicing machine that the N-type crystalline silicon matrix trisection after step (7) process is cut into the baby battery sheet of three pieces of 156mm*52mm, cut direction is parallel to back side main grid.
(9), the baby battery sheet front surface after step (8) is cut is laid to be stained with and is mixed the metal wire of aluminum paste (Du Pont PV3N2) and dry.Metal wire arranges 80 altogether, parallel to each other, and spacing is 1.95mm.The direction of metal wire is orthogonal with back side main grid.Metal wire is circular silver-coated copper wire, and a diameter of 40-80 micron, a length of 58-62mm, wherein the one end away from back side main grid is exposed beyond cell piece, the long 6-10mm in exposed portion.
(10), step (9) is processed after N-type crystalline silicon matrix transmission enter belt sintering stove and be sintered, sintering peak temperature is 850-950 DEG C, i.e. completes the preparation of this utility model N-type crystalline silicon battery.
The series-mounting of solaode:
As shown in Figure 3 and Figure 4, first on the back side main grid of cell piece, coat tin cream, then the front electrode i.e. silver-coated copper wire of first piece of baby battery sheet is pressed on the tin paste layer of second piece of baby battery sheet back side main grid, is heated to 183-250 degree and completes front electrode and the connection of back side main grid.The concatenation of polylith cell piece can be completed the step for of repetition.
The cell piece made according to the preparation technology in embodiment 1, embodiment 2 and embodiment 3, its front can reduce about 50% containing silver paste consumption.According to the cell piece preparation technology in embodiment 1, embodiment 2 and embodiment 3 and series-mounting, compared to the prior art, its power loss brought by concatenation can reduce about 88%, 93% and 88% respectively.
The present embodiment additionally provides a kind of solar module, and including the front layer material from top to bottom connected, encapsulating material, solaode, encapsulating material, backboard, solaode is above-mentioned a kind of solaode.The structure and working principle of the solar module of the present embodiment uses technology well known in the art, and the improvement of the solar module of this utility model offer only relates to above-mentioned solaode, is not modified other parts.Therefore solaode and preparation method thereof is only described in detail by this specification, miscellaneous part and operation principle to solar module repeat no more here.Those skilled in the art, in the content basis that this specification describes, can realize solar module of the present utility model.
The present embodiment additionally provides a kind of solar cell system, and including the solar module of one or more than one series connection, solar module is above-mentioned a kind of solar module.The structure and working principle of the solar cell system of the present embodiment uses technology well known in the art, and the improvement of the solar cell system of this utility model offer only relates to above-mentioned solaode, is not modified other parts.Therefore solaode and preparation method thereof is only described in detail by this specification, miscellaneous part and operation principle to solar cell system repeat no more here.Those skilled in the art, in the content basis that this specification describes, can realize solar cell system of the present utility model.
Finally should be noted that; above example is only in order to illustrate the technical solution of the utility model; rather than the restriction to this utility model protection domain; although having made to explain to this utility model with reference to preferred embodiment; it will be understood by those within the art that; the technical solution of the utility model can be modified or equivalent, without deviating from the spirit and scope of technical solutions of the utility model.
Claims (9)
1. a solaode, including solaode matrix, it is characterised in that: the front surface of described solaode matrix is provided with metal wire, and described metal wire is connected by silver with described solaode matrix；The edge of described solaode matrix back surface is provided with back side main grid, extends the edge of solaode matrix away from the metal wire of back side main grid；The length of described back side main grid and wide ratio are less than or equal to 600: 1.
A kind of solaode the most according to claim 1, it is characterised in that: described metal wire is silver-coated copper wire, aluminum steel or copper cash.
A kind of solaode the most according to claim 1, it is characterised in that: the edge 6-10mm of solaode matrix is extended away from the metal wire of back side main grid.
A kind of solaode the most according to claim 1, it is characterised in that: described back side main grid width 2-6mm.
A kind of solaode the most according to claim 1, it is characterised in that: a diameter of 40-80 micron of described metal wire.
6. according to the arbitrary described a kind of solaode of Claims 1 to 5, it is characterised in that: described solaode matrix is p-type solaode matrix, and the back surface of described p-type solaode matrix is provided with back aluminium electrode.
7. according to the arbitrary described a kind of solaode of Claims 1 to 5, it is characterised in that: described solaode matrix is N-type solaode matrix, and the back surface of described N-type solaode matrix is provided with H type grid line.
8. a solar module, including the front layer material being from top to bottom sequentially connected with, encapsulating material, solaode, encapsulating material, backboard, it is characterised in that: described solaode is the arbitrary described a kind of solaode of claim 1～7.
9. a solar cell system, including the solar module of one or more than one series connection, it is characterised in that: described solar module is a kind of solar module described in claim 8.
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Effective date of registration: 20221215 Address after: 030000 Room 424, 4/F, Building 5, Science and Technology Innovation Incubation Base, No. 77, Tanghuai Road, Taiyuan Tanghuai Park, Comprehensive Reform Demonstration Zone, Taiyuan City, Shanxi Province Patentee after: Shanxi Zhonglai Solar Battery Technology Co.,Ltd. Address before: 225500 Kaiyang Road, Jiangyan Economic Development Zone, Taizhou City, Jiangsu Province Patentee before: JOLYWOOD (TAIZHOU) SOLAR TECHNOLOGY Co.,Ltd. |