CN205428937U - 非穿通型igbt - Google Patents
非穿通型igbt Download PDFInfo
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- CN205428937U CN205428937U CN201520893623.6U CN201520893623U CN205428937U CN 205428937 U CN205428937 U CN 205428937U CN 201520893623 U CN201520893623 U CN 201520893623U CN 205428937 U CN205428937 U CN 205428937U
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- 206010019133 Hangover Diseases 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201520893623.6U CN205428937U (zh) | 2015-11-11 | 2015-11-11 | 非穿通型igbt |
Applications Claiming Priority (1)
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CN201520893623.6U CN205428937U (zh) | 2015-11-11 | 2015-11-11 | 非穿通型igbt |
Publications (1)
Publication Number | Publication Date |
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CN205428937U true CN205428937U (zh) | 2016-08-03 |
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CN201520893623.6U Expired - Fee Related CN205428937U (zh) | 2015-11-11 | 2015-11-11 | 非穿通型igbt |
Country Status (1)
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CN (1) | CN205428937U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021077579A1 (zh) * | 2019-10-23 | 2021-04-29 | 广东美的白色家电技术创新中心有限公司 | 一种绝缘栅双极型晶体管、功率模块及生活电器 |
-
2015
- 2015-11-11 CN CN201520893623.6U patent/CN205428937U/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021077579A1 (zh) * | 2019-10-23 | 2021-04-29 | 广东美的白色家电技术创新中心有限公司 | 一种绝缘栅双极型晶体管、功率模块及生活电器 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200108 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: 315800 No. 155, West Mount Lu Road, Ningbo Free Trade Zone, Ningbo, Zhejiang Patentee before: NINGBO BYD SEMICONDUCTOR Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160803 |