CN205420534U - Improve device of pulsed laser deposition uniformity of film - Google Patents
Improve device of pulsed laser deposition uniformity of film Download PDFInfo
- Publication number
- CN205420534U CN205420534U CN201620193013.XU CN201620193013U CN205420534U CN 205420534 U CN205420534 U CN 205420534U CN 201620193013 U CN201620193013 U CN 201620193013U CN 205420534 U CN205420534 U CN 205420534U
- Authority
- CN
- China
- Prior art keywords
- spectroscope
- vacuum cavity
- motor
- take
- single move
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004549 pulsed laser deposition Methods 0.000 title claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Abstract
The utility model discloses an improve device of pulsed laser deposition uniformity of film, include: vacuum cavity, sample platform, be used for carrying out the heating mechanism, target and the laser instrument that heat to the sample platform, sample platform, heating mechanism, target lie in the vacuum cavity, one take the every single move spectroscope with the laser instrument is located outside the vacuum cavity, a focusing mirror is installed to the vacuum cavity, the laser instrument, take every single move spectroscope and focusing mirror to form a light path, first motor is connected to takes the spectroscopical back of every single move, take the every single move spectroscope to take every single move spectroscope subsequent rotation under a motor drive, the second motor is connected to the target, take the every single move spectroscope to take the every single move spectroscope rotatory under a motor drive. The utility model discloses the angle of its mirror surface normal direction and incident light is constantly changeable to the reverberation scope changes in the region of an expansion, is evenly distributed to the light intensity before getting into collector lens, thereby can improves the homogeneity of deposit film.
Description
Technical field
This utility model relates to a kind of film deposition apparatus, particularly relates to a kind of device improving pld (pulsed laser deposition) uniformity.
Background technology
Pulsed laser deposition technique is that one utilizes laser to bombard object, and bombardment species precipitate out obtains on substrate a kind of method of thin film.When the physical principle of pulsed laser deposition technique relates to high energy pulse radiation impact solid target, interaction between laser and material, arrives transfer and the generation process of thin film of substrate surface including the formation of plasma plume brightness, the material that melts by plasma plume brightness.Pulsed laser deposition can be generally divided into four-stage: the interaction of (1) laser emission and material;(2) melted material;(3) melted material is in the deposition of substrate;(4) thin film is in the nucleation of substrate surface and generation.Pulsed laser deposition technique has the advantage that (1) obtains the multi-component film of expectation stoichiometric proportion;(2) sedimentation rate is high;(3) technological parameter arbitrarily regulates, and not limits the kind of target.But, pulsed laser deposition technique homogeneity question time to have weak point, subject matter be to prepare larger area thin film when depositing thin film, generally prepare film size more than 20 × 20mm2Time, thin film inhomogeneities is the most prominent, can be clearly apparent the decorative pattern band that film surface inhomogeneities presents.Therefore, improve pld (pulsed laser deposition) uniformity scientific research or Overview of Thin Film Industrialization are all had to be of great significance.
Summary of the invention
This utility model provides a kind of device improving pld (pulsed laser deposition) uniformity, in this precipitation equipment, laser is when dichroic mirror, angle between spectroscope minute surface normal direction and incident illumination is being continually changing, thus reflect optical range and change in a region expanded, before entering collecting lens, light intensity is evenly distributed, it is thus possible to improve the uniformity of deposition thin film.
For reaching above-mentioned purpose, the technical solution adopted in the utility model is: a kind of device improving pld (pulsed laser deposition) uniformity, including: vacuum cavity, sample stage, for heating arrangements, target and laser instrument that sample stage is heated, described sample stage, heating arrangements, target are positioned at vacuum cavity, one band pitching spectroscope and described laser instrument are positioned at outside vacuum cavity, described vacuum cavity is provided with a focus lamp, and described laser instrument, band pitching spectroscope and focus lamp form a light path;First motor is connected to the spectroscopical back of band pitching, described band pitching spectroscope drives band pitching spectroscope to rotate continuously under the first motor drives, second motor is connected to target, and described band pitching spectroscope drives band pitching spectroscope to rotate under the first motor drives.
Technique scheme is further improved technical scheme as follows:
In such scheme, described vacuum cavity is provided with an observation window.
Owing to technique scheme is used, this utility model compared with prior art has the advantage that
This utility model improves the device of pld (pulsed laser deposition) uniformity, it uses the driving pitching spectroscopic apparatus of band pitching spectroscope and motor composition can order about spectroscope angle of its minute surface normal direction and incident illumination in rotary course and is being continually changing, thus reflect optical range and change in a region expanded, before entering collecting lens, light intensity is evenly distributed, target is bombarded after condenser lens converges, because the aura important role that on target, evaporated material is produced by the uniformity of spot intensity, it is thus possible to improve the uniformity of deposition thin film.
Accompanying drawing explanation
Accompanying drawing 1 improves the apparatus structure schematic diagram of pld (pulsed laser deposition) uniformity for this utility model;
The film surface photo figure that accompanying drawing 2 is prepared for prior art precipitation equipment;
The film surface photo figure that accompanying drawing 3 is prepared for this utility model precipitation equipment.
In the figures above: 1, vacuum cavity;2, sample stage;3, heating arrangements;4, target;5, laser instrument;6, band pitching spectroscope;7, focus lamp;8, the first motor;9, the second motor;10, observation window.
Detailed description of the invention
Below in conjunction with the accompanying drawings and this utility model is further described by embodiment:
Embodiment: a kind of device improving pld (pulsed laser deposition) uniformity, including: vacuum cavity 1, sample stage 2, for heating arrangements 3, target 4 and laser instrument 5 that sample stage 2 is heated, described sample stage 2, heating arrangements 3, target 4 are positioned at vacuum cavity 1, one band pitching spectroscope 6 and described laser instrument 5 are positioned at outside vacuum cavity 1, described vacuum cavity 1 is provided with a focus lamp 7, and described laser instrument 5, band pitching spectroscope 6 and focus lamp 7 form a light path;First motor 8 is connected to the back of band pitching spectroscope 6, described band pitching spectroscope 6 drives band pitching spectroscope 6 to rotate continuously under the first motor 8 drives, second motor 9 is connected to target 4, and described band pitching spectroscope drives band pitching spectroscope 6 to rotate under the first motor 8 drives.
An observation window 10 it is provided with on above-mentioned vacuum cavity 1.
The present invention is further described below.
The precipitation equipment improving pulse laser uniformity of film that the present invention relates to mainly includes parts as shown in Figure 1, vacuum cavity, observation window, LASER Light Source, band pitching spectroscope, drives motor that spectroscope rotates, condenser lens, target, the motor of driving target rotation, sample stage, device for sample stage heating.This patent increases band pitching spectroscope and to the motor part driving spectroscope to rotate, it is achieved the raising of uniformity of film.
Aforesaid band pitching spectroscope is can to regulate incident illumination to enter the device of vacuum chamber angle.
The motor that aforesaid driving spectroscope rotates is the device that drive belt pitching spectroscope rotates continuously.
Spectroscope is placed in above the pitching platform of scalable mirror angle, if incident angle of light θ changes Δ θ, reflection angular then changes 2 Δ θ, spectroscope and condenser lens spacing L=0.5m, so when regulating Δ θ=1o, laser facula side-play amount on condenser lens surface is Δ x=L × 2 Δ θ=8.7mm.Spot size is usually 15 × 20mm2, condenser lens diameter is usually 50mm, then side-play amount is completely in the range of condenser lens on condenser lens for hot spot, and pulse laser is all focused on target.Therefore, after improving the laser facula of uneven light intensity along with spectroscopical be rotated in reach condenser lens before be re-distributed, after condenser lens focuses on uniformly bombardment on target.
The motor rotary speed driving spectroscope to rotate has certain requirement, in order to avoid spectroscope rotates one week and pulse laser repetition rate is in step with.Rotating speed adjusts according to pulse laser outgoing repetition rate, and pulse laser repetition rate is normally in 1 ~ 10Hz, correspondence cycle T=1 ~ 0.1 second, and spectroscope rotational angle is not 2 π integral multiples,
This mainly prevents laser facula not to be repetitively appearing on spectroscope same position.Such as, when user uses pulse laser repetition rate to be 5Hz, cycle T=0.2 second, then if motor rotary speed?.
It is that the present invention uses identical filming technology condition respectively shown in accompanying drawing 2 and accompanying drawing 3, in the case of not rotating spectroscope and rotating spectroscope, prepares the surface picture of thin film, photo area 100 × 100 μm2.It is obvious that be significantly improved when rotating spectroscope rear film uniformity coefficient, light and shade striped does not occurs.
Above-described embodiment only for technology of the present utility model design and feature are described, its object is to allow person skilled in the art will appreciate that content of the present utility model and to implement according to this, can not limit protection domain of the present utility model with this.All equivalence changes made according to this utility model spirit or modification, all should contain within protection domain of the present utility model.
Claims (2)
1. the device improving pld (pulsed laser deposition) uniformity, it is characterized in that: including: vacuum cavity (1), sample stage (2), for the heating arrangements (3) that sample stage (2) is heated, target (4) and laser instrument (5), described sample stage (2), heating arrangements (3), target (4) is positioned at vacuum cavity (1), one band pitching spectroscope (6) and described laser instrument (5) are positioned at vacuum cavity (1) outward, described vacuum cavity (1) is provided with a focus lamp (7), described laser instrument (5), band pitching spectroscope (6) and focus lamp (7) form a light path;First motor (8) is connected to the back of band pitching spectroscope (6), described band pitching spectroscope (6) drives band pitching spectroscope (6) to rotate continuously under the first motor (8) drives, second motor (9) is connected to target (4), and described band pitching spectroscope drives band pitching spectroscope (6) to rotate under the first motor (8) drives.
The device of raising pld (pulsed laser deposition) uniformity the most according to claim 1, it is characterised in that: it is provided with an observation window (10) on described vacuum cavity (1).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620193013.XU CN205420534U (en) | 2016-03-14 | 2016-03-14 | Improve device of pulsed laser deposition uniformity of film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201620193013.XU CN205420534U (en) | 2016-03-14 | 2016-03-14 | Improve device of pulsed laser deposition uniformity of film |
Publications (1)
Publication Number | Publication Date |
---|---|
CN205420534U true CN205420534U (en) | 2016-08-03 |
Family
ID=56534803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201620193013.XU Expired - Fee Related CN205420534U (en) | 2016-03-14 | 2016-03-14 | Improve device of pulsed laser deposition uniformity of film |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN205420534U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108342697A (en) * | 2018-01-11 | 2018-07-31 | 中国科学院微电子研究所 | A kind of pulsed laser deposition devices and methods therefor |
CN109830429A (en) * | 2019-01-23 | 2019-05-31 | 广西大学 | A kind of double light path pulse laser is in Si(100) method of deposition on substrate InGaN film |
CN111360146A (en) * | 2020-03-23 | 2020-07-03 | 沈阳航空航天大学 | Device and method for preparing metal film by area expansion under vacuum environment |
-
2016
- 2016-03-14 CN CN201620193013.XU patent/CN205420534U/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108342697A (en) * | 2018-01-11 | 2018-07-31 | 中国科学院微电子研究所 | A kind of pulsed laser deposition devices and methods therefor |
CN109830429A (en) * | 2019-01-23 | 2019-05-31 | 广西大学 | A kind of double light path pulse laser is in Si(100) method of deposition on substrate InGaN film |
CN109830429B (en) * | 2019-01-23 | 2021-04-30 | 广西大学 | Method for depositing InGaN film on Si (100) substrate by double-optical-path pulse laser |
CN111360146A (en) * | 2020-03-23 | 2020-07-03 | 沈阳航空航天大学 | Device and method for preparing metal film by area expansion under vacuum environment |
CN111360146B (en) * | 2020-03-23 | 2021-06-15 | 沈阳航空航天大学 | Device and method for preparing metal film by area expansion under vacuum environment |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN205420534U (en) | Improve device of pulsed laser deposition uniformity of film | |
CA2920077C (en) | Method for producing a pane with an electrically conductive coating with electrically isolated defects | |
CN108213718B (en) | A kind of femtosecond laser regulation GemSbnTekCrystalline state nanostructure geometric shape method | |
Płóciennik et al. | Optical properties of MgO thin films grown by laser ablation technique | |
Ban et al. | Thin films of semiconductors and dielectrics produced by laser evaporation | |
US20160230265A1 (en) | Multiple Beam Pulsed Laser Deposition Of Composite Films | |
JP2007248828A (en) | Method and apparatus for forming optical thin film | |
JP2015528781A (en) | Apparatus and method for laser processing a large area substrate using at least two bridges | |
US20140272198A1 (en) | Systems, methods, and media for creating metallization for solar cells | |
Ageev et al. | Generation of web-like structures and nanoparticles by femtosecond laser ablation of silicon target in ambient air | |
EP2000558B1 (en) | Method and apparatus for manufacturing purely refractive optical structures | |
CN206872934U (en) | A kind of pulsed laser deposition device for preparing doping film | |
Borisov et al. | Deposition of Er3+ doped chalcogenide glass films by excimer laser ablation | |
US20190169739A1 (en) | An interference coating or its part consisting layers with different porosity | |
US10276740B1 (en) | Co-deposition of black silicon | |
CN210163516U (en) | Large-area atomic-scale precision laser molecular beam epitaxial film preparation system | |
Eisa et al. | Femtosecond pulsed laser induced growth of highly transparent indium-tin-oxide thin films: Effect of deposition temperature and oxygen partial pressure | |
CN101281949A (en) | Method for improving ultraviolet photoluminescence intensity of zinc oxide thin film | |
CN109585591B (en) | Non-polar surface type BeZnOS alloy crystal base MSM ultraviolet light detector and preparation method thereof | |
Chan y Díaz et al. | SnO 2 thin films grown by pulsed Nd: YAG laser deposition | |
KR20170099176A (en) | Pulsed laser deposition system for functionally graded antireflection coatings and deposition method using the same | |
KR102010319B1 (en) | Pulse Laser Deposition Equipment Comprising Vacuum Chamber | |
RU2697313C1 (en) | Method of physical deposition of thin films of metals from gas phase | |
CN106756901A (en) | Metastable state magnesium MgZnO solid solution alloys membrane laser ablation preparation method high | |
JPH11246965A (en) | Formation of thin film by laser vapor deposition method and laser vapor deposition device used for the method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160803 |