CN108342697A - A kind of pulsed laser deposition devices and methods therefor - Google Patents
A kind of pulsed laser deposition devices and methods therefor Download PDFInfo
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- CN108342697A CN108342697A CN201810028030.1A CN201810028030A CN108342697A CN 108342697 A CN108342697 A CN 108342697A CN 201810028030 A CN201810028030 A CN 201810028030A CN 108342697 A CN108342697 A CN 108342697A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
Abstract
The embodiment of the present application provides a kind of pulsed laser deposition device, and described device includes：Chamber, the chamber are set there are two quartz window, and the chamber includes；Rotatable target, the rotatable target are set to the chamber interior；Substrate, the substrate are set to the chamber interior, and the substrate is oppositely arranged with the rotatable target；First laser, the first laser, by the quartz window, are incident to the upper surface of the rotatable target from the exterior thereto；Second laser, the second laser, by the quartz window, are incident to the upper surface of the rotatable target from the exterior thereto；It solves in existing impulse laser deposition system film forming procedure, plasma components fluctuation is big, it is easy to bulky grain occur, cause to be susceptible to the problem of impurity particle influences crystal property in film, the crystal property and uniformity for improving film are reached, the impurity particle in film is reduced, the technique effect of the film of high quality is prepared.
Description
Technical field
The present invention relates to laser technology field, more particularly to a kind of pulsed laser deposition devices and methods therefor.
Background technology
Pulsed laser deposition is applied to prepare various thin-film materials, and keeps the stoichiometric compositions of target.
But present inventor has found above-mentioned technology extremely during inventive technique scheme in realizing the embodiment of the present application
It has the following technical problems less：
In existing impulse laser deposition system film forming procedure, plasma components fluctuation is big, is easy to bulky grain occur, causes
Impurity particle is susceptible in film influences crystal property.
Invention content
The embodiment of the present application solves existing pulsed laser deposition by providing a kind of pulsed laser deposition devices and methods therefor
In system film forming procedure, plasma components fluctuation is big, is easy to bulky grain occur, causes to be susceptible to impurity particle shadow in film
The problem of ringing crystal property has reached the controllability for improving plasma components, to reduce the generation of drop, and then improves film
Crystal property and uniformity, reduce film in impurity particle, prepare the technique effect of the film of high quality.
In view of the above problems, the embodiment of the present application provides a kind of pulsed laser deposition devices and methods therefor.
In a first aspect, the embodiment of the present application provides a kind of pulsed laser deposition device, described device includes：Chamber, institute
It states chamber to set there are two quartz window, the chamber includes；Rotatable target, the rotatable target are set in the chamber
Portion；Substrate, the substrate are set to the chamber interior, and the substrate is oppositely arranged with the rotatable target；First laser,
The first laser, by the quartz window, is incident to the upper surface of the rotatable target from the exterior thereto；Second
Laser, the second laser, by the quartz window, are incident to the upper surface of the rotatable target from the exterior thereto；
Wherein, the first laser and the second laser are incident to the upper of the rotatable target by the same quartz window
Surface or the first laser and the second laser are incident to the rotatable target by two quartz windows respectively
The upper surface of material.
Preferably, the first laser is preheating long wavelength laser, and the wavelength of the first laser is 355-1064nm, defeated
It is 1-500W to go out power.
Preferably, the second laser is plasma short wavelength laser, and the wavelength of the second laser is 248-
1064nm, energy 50-800mJ.
Preferably, the incidence angle that the first laser is incident to the rotatable target is 10 ° -80 °.
Preferably, the incidence angle that the second laser is incident to the rotatable target is 10 ° -80 °.
Second aspect, present invention also provides a kind of pulse laser sediment method, the method includes：Substrate is put successively
Enter to carry out respectively in acetone, isopropanol, ultra-pure water 5 minutes to be cleaned by ultrasonic, and carries out nitrogen drying；The substrate is put into described
In the chamber of pulsed laser deposition device, by the chamber vacuum state, rotate the substrate, begin to warm up, it is described can
Rotary target material is isolated using baffle, leads to process gas；Rotate the rotatable target, target baffle is opened, and first uses described the
One laser preheats the rotatable target, then generates plasma-deposited film using second laser excitation.
Preferably, the preheating time that the first laser preheats the rotatable target is 0-1h.
Preferably, the process gas flow is 0-100sccm.
Preferably, the substrate and the rotating speed of the rotatable target are 5-100r/min
Preferably, the indoor process pressure of the chamber is 10-4-10-8Pa。
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages：
1. a kind of pulsed laser deposition device provided by the embodiments of the present application, described device include：Chamber, the chamber are set
There are two quartz window, the chamber includes；Rotatable target, the rotatable target are set to the chamber interior；Substrate,
The substrate is set to the chamber interior, and the substrate is oppositely arranged with the rotatable target；First laser, described first
Laser, by the quartz window, is incident to the upper surface of the rotatable target from the exterior thereto；Second laser, it is described
Second laser, by the quartz window, is incident to the upper surface of the rotatable target from the exterior thereto；Wherein, described
First laser and the second laser are incident to the upper surface of the rotatable target by the same quartz window, or
The first laser and the second laser are incident to the upper table of the rotatable target by two quartz windows respectively
Face.It solves in existing impulse laser deposition system film forming procedure, plasma components fluctuation is big, is easy to bulky grain occur, causes
It is susceptible to the problem of impurity particle influences crystal property in film, has reached the controllability for improving plasma components, to subtract
The generation of few drop, and then the crystal property and uniformity of film are improved, the impurity particle in film is reduced, high quality is prepared
Film technique effect.
2. the embodiment of the present application is preheating long wavelength laser by the first laser, the wavelength of the first laser is
355-1064nm, output power 1-500W.It solves in existing impulse laser deposition system film forming procedure, plasma components wave
It is dynamic big, it is easy to bulky grain occur, causes to be susceptible to the problem of impurity particle influences crystal property in film, reaching makes target exist
Before its plasma, quickly absorbs laser energy and increase the molecular thermalmotion of target or make the technology of target local melting
Effect.
3, the embodiment of the present application is plasma short wavelength laser, the wavelength of the second laser by the second laser
For 248-1064nm, energy 50-800mJ.It solves in existing impulse laser deposition system film forming procedure, plasma components wave
It is dynamic big, it is easy to bulky grain occur, causes to be susceptible to the problem of impurity particle influences crystal property in film, reach excitation target
Generate the technique effect of plasma plume brightness.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, and in order to allow above and other objects of the present invention, feature and advantage can
It is clearer and more comprehensible, below the special specific implementation mode for lifting the present invention.
Description of the drawings
It in order to more clearly explain the technical solutions in the embodiments of the present application, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is some realities of the application
Example is applied, it for those of ordinary skill in the art, without having to pay creative labor, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of pulsed laser deposition device provided by the embodiments of the present application；
Fig. 2 is a kind of flow diagram of pulse laser sediment method provided by the embodiments of the present application；
Drawing reference numeral explanation：Chamber 1, quartz window 2a, quartz window 2b, first laser 3, second laser 4, rotatable target
Material 5, substrate 6.
Specific implementation mode
A kind of pulsed laser deposition device provided by the embodiments of the present application, described device include：Chamber, the chamber are equipped with
Two quartz windows, the chamber include；Rotatable target, the rotatable target are set to the chamber interior；Substrate, institute
It states substrate and is set to the chamber interior, the substrate is oppositely arranged with the rotatable target；First laser, described first swashs
Light, by the quartz window, is incident to the upper surface of the rotatable target from the exterior thereto；Second laser, described
Dual-laser, by the quartz window, is incident to the upper surface of the rotatable target from the exterior thereto；Wherein, described
One laser and the second laser are incident to the upper surface of the rotatable target, Huo Zhesuo by the same quartz window
State the upper surface that first laser and the second laser are incident to the rotatable target by two quartz windows respectively.
It solves in existing impulse laser deposition system film forming procedure, plasma components fluctuation is big, is easy to bulky grain occur, leads to film
In be susceptible to impurity particle influence crystal property the problem of, reached improve plasma components controllability, to reduce liquid
The generation of drop, and then the crystal property and uniformity of film are improved, the impurity particle in film is reduced, the thin of high quality is prepared
The technique effect of film.
The exemplary embodiment of the disclosure is more fully described below with reference to accompanying drawings.Although showing the disclosure in attached drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure without should be by embodiments set forth here
It is limited.On the contrary, these embodiments are provided to facilitate a more thoroughly understanding of the present invention, and can be by the scope of the present disclosure
Completely it is communicated to those skilled in the art.
Embodiment one
Fig. 1 is a kind of structure of pulsed laser deposition device provided by the embodiments of the present application, pulsed laser deposition (Pulsed
Laser Deposition, PLD), also referred to as pulse laser ablation (pulsed laser ablation, PLA) is a kind of
Object is bombarded using laser, then next species precipitate will be pounded on different substrates, is precipitated or thin
A kind of means of film.High power pulsed laser is namely focused on into target material surface, so that its surface is generated high temperature and ablation, goes forward side by side
One step generates high temperature and pressure plasma, and plasma orients local expansion and preferentially transmitted along the normal direction of target, formed
Plumage brightness, last ablation object deposit to front substrate on form thin film.Since the energy of laser is high, it is thin infusibility can be deposited
Film, existing various thin-film materials can be deposited and keep the stoichiometric compositions of target by making it almost.As shown in Figure 1, described
Structure includes：
Chamber 1, the chamber 1 are set there are two quartz window 2, and the chamber 1 includes；Rotatable target 5, it is described rotatable
Target 5 is set to inside the chamber 1；Substrate 6, the substrate 6 are set to inside the chamber 1, the substrate 6 with it is described can
Rotary target material 5 is oppositely arranged；
Specifically, the chamber 1 is the accommodating space of a sealing, the chamber can be spherical, rectangular, Huo Zheyuan
Cylindricality etc., it should be appreciated that the application is illustrated for the shape of the chamber 1, but the application is not limited to this.The chamber
Body 1 is set there are two quartz window, quartz window 2a and quartz window 2b, and described two quartz windows 2 are set to 1 table of the cavity
Face so that laser can be injected by the quartz window 2 inside the cavity 1, and the rotatable target 5 is located at the cavity
1 inside, the rotatable target 5 have rotating device, can rotate, the substrate 6 and 5 phase of the rotatable target
To setting, it is located inside the cavity 1.
First laser 3, the first laser 3 outside the chamber 1 by the quartz window 2, be incident to it is described can
The upper surface of rotary target material 5, the first laser 3 are preheating long wavelength laser, and the wavelength of the first laser 3 is 355-
1064nm, output power 1-500W；The incidence angle that the first laser 3 is incident to the rotatable target 5 is 10 ° -80 °.
Specifically, the first laser 3 is long wavelength laser, the wavelength of the first laser 3 is 355-1064nm, defeated
It is 1-500W to go out power, and the application first introduces a branch of long wavelength laser in traditional impulse laser deposition system, described the
One laser 3, by the quartz window 2, is incident to the upper surface of the rotatable target 5 outside the chamber 1, can make
Rotatable target 5 absorbs the energy of the long wavelength laser, so that the molecular thermalmotion of the rotatable target 5 is accelerated, to reach
To the ionization level for increasing target, the technique effect of the formation of large particle is reduced.
Second laser, the second laser, by the quartz window, are incident to described rotatable from the exterior thereto
The upper surface of target, the second laser are plasma short wavelength laser, and the wavelength of the second laser is 248-1064nm,
Energy is 50-800mJ；The incidence angle that the second laser is incident to the rotatable target is 10 ° -80 °.
Specifically, the second laser 4 is short wavelength laser, the wavelength of the second laser is 248-1064nm, energy
Amount is 50-800mJ, and the energy that the application absorbs the first laser 3 in the rotatable target 5 makes its molecular thermalmotion accelerate
Afterwards, and then continue to absorb the namely short wavelength laser excitation generation plasma of the second laser 4, be existed by double light beam laser
Time and regulation and control spatially and matching, improve the controllability of plasma components, reduce the generation of drop, and then improve film
Crystal property and uniformity, prepare the film of high quality.For overcoming in existing impulse laser deposition system film forming procedure,
Plasma components fluctuation is big, is easy to bulky grain occur, the problem for causing film impurities particle multilist surface roughness big.
Wherein, the first laser and the second laser are incident to described rotatable by the same quartz window
The upper surface of target or the first laser and the second laser are incident to by two quartz windows described respectively
The upper surface of rotatable target.
Embodiment two
The embodiment of the present application also provides a kind of pulse laser sediment methods, as shown in Fig. 2, Fig. 2 is the embodiment of the present application
A kind of flow diagram of the pulse laser sediment method provided, the method includes：
Step 110：Substrate 6 is sequentially placed into acetone, isopropanol, ultra-pure water and carries out being cleaned by ultrasonic for 5 minutes respectively, is gone forward side by side
Row nitrogen dries up；
Step 120：The substrate 6 is put into the chamber 1 of the pulsed laser deposition device, the chamber 1 is pumped into
Vacuum state rotates the substrate 6, begins to warm up, and the rotatable target 5 is isolated using baffle, leads to process gas, the work
Skill gas flow is 0-100sccm, and the indoor process pressure of chamber is 10-4-10-8Pa；
Step 130：The rotatable target 5 is rotated, target baffle is opened, and is first preheated using the first laser 3 described
Rotatable target, then plasma-deposited film is generated using the second laser 4 excitation, the first laser 3 preheats described
The preheating time of rotatable target 5 is 0-1h, and the rotating speed of the substrate 6 and the rotatable target 5 is 5-100r/min.
Embodiment three
The embodiment of the present application also provides a kind of pulse laser sediment method, the first laser 3 and the second laser 4
The upper surface of the rotatable target 5 is incident to by same quartz window 2, the method includes：
Step 110：Substrate 6 is sequentially placed into acetone, isopropanol, ultra-pure water and carries out being cleaned by ultrasonic for 5 minutes respectively, is gone forward side by side
Row nitrogen dries up；
Step 120：The substrate 6 is put into the chamber 1 of the pulsed laser deposition device, the chamber 1 is pumped into
Vacuum state rotates the substrate 6, begins to warm up, and the rotatable target 5 is isolated using baffle, leads to process gas, the work
Skill gas flow is 0-100sccm, and the indoor process pressure of chamber is 10-4-10-8Pa；
Step 130：The rotatable target 5 is rotated, target baffle is opened, and is first passed through using the first laser 3 described
Quartz window 2a is incident to the upper surface of the rotatable target 5, preheats the rotatable target, then use the second laser
4 are incident to the upper surface of the rotatable target 5 by the quartz window 2a, and excitation generates plasma-deposited film, institute
It is 0-1h to state first laser 3 and preheat the preheating time of the rotatable target 5, and the substrate 6 and the rotatable target 5 turn
Speed is 5-100r/min.
Example IV
The embodiment of the present application also provides a kind of pulse laser sediment method, the first laser 3 and the second laser 4
The upper surface of the rotatable target, the method packet are incident to by the quartz window 2a and the quartz window 2b respectively
It includes：
Step 110：Substrate 6 is sequentially placed into acetone, isopropanol, ultra-pure water and carries out being cleaned by ultrasonic for 5 minutes respectively, is gone forward side by side
Row nitrogen dries up；
Step 120：The substrate 6 is put into the chamber 1 of the pulsed laser deposition device, the chamber 1 is pumped into
Vacuum state rotates the substrate 6, begins to warm up, and the rotatable target 5 is isolated using baffle, leads to process gas, the work
Skill gas flow is 0-100sccm, and the indoor process pressure of chamber is 10-4-10-8Pa；
Step 130：The rotatable target 5 is rotated, target baffle is opened, and is first passed through using the first laser 3 described
Quartz window 2a is incident to the upper surface of the rotatable target 5, preheats the rotatable target, then use the second laser
4 are incident to the upper surface of the rotatable target by the quartz window 2b, and excitation generates plasma-deposited film, described
The preheating time that first laser 3 preheats the rotatable target 5 is 0-1h, the rotating speed of the substrate 6 and the rotatable target 5
For 5-100r/min.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages：
1. a kind of pulsed laser deposition device provided by the embodiments of the present application, described device include：Chamber, the chamber are set
There are two quartz window, the chamber includes；Rotatable target, the rotatable target are set to the chamber interior；Substrate,
The substrate is set to the chamber interior, and the substrate is oppositely arranged with the rotatable target；First laser, described first
Laser, by the quartz window, is incident to the upper surface of the rotatable target from the exterior thereto；Second laser, it is described
Second laser, by the quartz window, is incident to the upper surface of the rotatable target from the exterior thereto；Wherein, described
First laser and the second laser are incident to the upper surface of the rotatable target by the same quartz window, or
The first laser and the second laser are incident to the upper table of the rotatable target by two quartz windows respectively
Face.It solves in existing impulse laser deposition system film forming procedure, plasma components fluctuation is big, is easy to bulky grain occur, causes
It is susceptible to the problem of impurity particle influences crystal property in film, has reached the controllability for improving plasma components, to subtract
The generation of few drop, and then the crystal property and uniformity of film are improved, the impurity particle in film is reduced, high quality is prepared
Film technique effect.
2. the embodiment of the present application is preheating long wavelength laser by the first laser, the wavelength of the first laser is
355-1064nm, output power 1-500W.It solves in existing impulse laser deposition system film forming procedure, plasma components wave
It is dynamic big, it is easy to bulky grain occur, causes to be susceptible to the problem of impurity particle influences crystal property in film, reaching makes target exist
Before its plasma, quickly absorbs laser energy and increase the molecular thermalmotion of target or make the technology of target local melting
Effect.
3, the embodiment of the present application is plasma short wavelength laser, the wavelength of the second laser by the second laser
For 248-1064nm, energy 50-800mJ.It solves in existing impulse laser deposition system film forming procedure, plasma components wave
It is dynamic big, it is easy to bulky grain occur, causes to be susceptible to the problem of impurity particle influences crystal property in film, reach excitation target
Generate the technique effect of plasma plume brightness.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
It should be noted last that the above specific implementation mode is merely illustrative of the technical solution of the present invention and unrestricted,
Although being described the invention in detail with reference to example, it will be understood by those of ordinary skill in the art that, it can be to the present invention
Technical solution be modified or replaced equivalently, without departing from the spirit of the technical scheme of the invention and range, should all cover
In the scope of the claims of the present invention.
Claims (10)
1. a kind of pulsed laser deposition device, which is characterized in that described device includes：
Chamber, the chamber are set there are two quartz window, and the chamber includes；
Rotatable target, the rotatable target are set to the chamber interior；
Substrate, the substrate are set to the chamber interior, and the substrate is oppositely arranged with the rotatable target；
First laser, the first laser, by the quartz window, are incident to the rotatable target from the exterior thereto
Upper surface；
Second laser, the second laser, by the quartz window, are incident to the rotatable target from the exterior thereto
Upper surface；
Wherein, the first laser and the second laser are incident to the rotatable target by the same quartz window
Upper surface or the first laser and the second laser be incident to described can revolve by two quartz windows respectively
Turn the upper surface of target.
2. device as described in claim 1, which is characterized in that the first laser is to preheat long wavelength laser, described first
The wavelength of laser is 355-1064nm, output power 1-500W.
3. device as described in claim 1, which is characterized in that the second laser is plasma short wavelength laser, described
The wavelength of second laser is 248-1064nm, energy 50-800mJ.
4. device as described in claim 1, which is characterized in that the first laser is incident to the incidence of the rotatable target
Angle is 10 ° -80 °.
5. device as described in claim 1, which is characterized in that the second laser is incident to the incidence of the rotatable target
Angle is 10 ° -80 °.
6. a kind of pulse laser sediment method, which is characterized in that the method includes：
Substrate is sequentially placed into acetone, isopropanol, ultra-pure water and carries out being cleaned by ultrasonic for 5 minutes respectively, and carries out nitrogen drying；
The substrate is put into the chamber of the pulsed laser deposition device, by the chamber vacuum state, rotates institute
Substrate is stated, is begun to warm up, the rotatable target is isolated using baffle, leads to process gas；
The rotatable target is rotated, target baffle is opened, and first preheats the rotatable target using the first laser, then adopt
Plasma-deposited film is generated with second laser excitation.
7. method as claimed in claim 6, which is characterized in that when the first laser preheats the preheating of the rotatable target
Between be 0-1h.
8. method as claimed in claim 6, which is characterized in that the process gas flow is 0-100sccm.
9. method as claimed in claim 6, which is characterized in that the substrate and the rotating speed of the rotatable target are 5-
100r/min。
10. method as claimed in claim 6, which is characterized in that the indoor process pressure of chamber is 10-4-10-8Pa。
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| CN201810028030.1A CN108342697A (en) | 2018-01-11 | 2018-01-11 | A kind of pulsed laser deposition devices and methods therefor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257778A (en) * | 2018-03-12 | 2019-09-20 | 索尔玛特斯有限责任公司 | Method for pulse laser deposition |
| CN112481586A (en) * | 2019-09-12 | 2021-03-12 | 中国科学院物理研究所 | Preparation method of superconducting combined film, product and application thereof |
| CN112853278A (en) * | 2019-11-12 | 2021-05-28 | 中国科学院微电子研究所 | Preparation method of short-pulse laser deposition film |
| CN113463035A (en) * | 2021-07-01 | 2021-10-01 | 上海科技大学 | Pulse laser deposition system with horizontal structure layout |
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| CN110257778A (en) * | 2018-03-12 | 2019-09-20 | 索尔玛特斯有限责任公司 | Method for pulse laser deposition |
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| CN112853278B (en) * | 2019-11-12 | 2023-01-17 | 中国科学院微电子研究所 | Preparation method of short-pulse laser deposition film |
| CN113463035A (en) * | 2021-07-01 | 2021-10-01 | 上海科技大学 | Pulse laser deposition system with horizontal structure layout |
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