CN205021393U

CN205021393U - Chemical mechanical polishing device

Info

Publication number: CN205021393U
Application number: CN201520508997.1U
Authority: CN
Inventors: 任桦爀; 金旻成; 董慜攝; 金钟千
Original assignee: KC Tech Co Ltd
Current assignee: Case Polytron Technologies Inc
Priority date: 2015-01-30
Filing date: 2015-07-14
Publication date: 2016-02-10
Anticipated expiration: 2025-07-14

Abstract

The utility model relates to a chemical mechanical polishing device, above -mentioned chemical mechanical polishing device includes: polishing plate to rotate with the mode that the polished surface of wafer contacted, in order to polish above -mentioned polished surface, thick liquid supply portion in the process that above -mentioned wafer goes on polishing with the mode that contacts with above -mentioned polishing plate, supplies with the thick liquid, and the temperature regulation unit, before supplying with the wafer to above -mentioned polishing plate, heat above -mentioned wafer, from this, the polishing volume that can shorten the time per unit keeps the required time of starting stage of lower state, consequently, can be through shortening the required whole time productivity gain of chemically mechanical polishing process, can provide the environment that less the going on of polishing volume deviation that be favorable to making the wafer polished surface was controlled.

Description

Chemical mechanical polishing apparatus

Technical field

The utility model relates to chemical mechanical polishing apparatus, relates more specifically to shorten chemical-mechanical polishing process required time, and can control the chemical mechanical polishing apparatus of the adjustment of burnishing surface more accurately.

Background technology

Chemically mechanical polishing (CMP) device 1 is in semiconductor element preparation process, for removing the difference in height between concavo-convex the caused cell area of the wafer surface generated because repeatedly performing mask, etching and cabling processes etc. and peripheral circuit area, realize wide area planarized, and in order to improve the wafer surface roughness required along with circuit formation contact/wiring membrane separation and high integrated component, precise polished processing is carried out to the surface of wafer.

As shown in Figure 1, in this chemically mechanical polishing (CMP) device 1, rubbing head 20 to be exerted pressure to above-mentioned wafer W with the polishing pad 11 of the burnishing surface of wafer W and polishing plate 10 state in opposite directions and is made above-mentioned wafer W carry out rotation 20d in polishing process process, and polishing pad 11 also with platform body 12 together rotation 11d perform mechanical polishing process.Now, when slurries supply from the supply port 32 of slurries supply unit 30 to polishing pad 11, slurries flow into wafer W and perform the chemical polishing operation of wafer W.

Meanwhile, the adjustment disk of adjuster 40 rotates 40d in the mode of exerting pressure downwards, and its arm 41 carries out reciprocal 41d with specified angle, and carries out upgrading to the surface of polishing pad 11.

The polishing layer being laminated in wafer W is formed by the various raw material of metal film or the oxide-films etc. such as tungsten.But, learn by experiment, as shown in Figure 3, no matter the type of polishing layer, at the starting stage A1 of chemical-mechanical polishing process, no matter polishing time how long, polishing thickness 79 is almost constant, at the main polishing stage A2 after Time constant T1, just start to increase according to the polished amount 89 of chemical-mechanical polishing process, and reach final polishing thickness dx.

But starting stage A1 required time T1 accounts for 2/5 ~ 1/2 of whole polishing time, consumes a large amount of time, therefore, there is the problem that the productivity ratio that performs chemical-mechanical polishing process is at the appointed time low.

And, along with the required time T1 at starting stage A1 is elongated, in order to shorten the chemically mechanical polishing time for per chip, in the polished amount of main polishing stage A2 comparatively earth control time per unit, therefore, the problem of the polishing thickness with the wafer polishing face that cannot control accurately on whole plate face is caused.

Utility model content

The technical problem solved

The utility model proposes to solve above-mentioned existing problems, and the purpose of this utility model is to provide and can shortens chemical-mechanical polishing process required time, and can control the chemical mechanical polishing apparatus that regulates burnishing surface more accurately.

That is, the purpose of this utility model is, in chemical-mechanical polishing process, by the time needed for the starting stage that the polished amount of shortening time per unit is less, thus reduces overall chemical mechanical polishing process required time, thus, boosts productivity.

Thus, the purpose of this utility model is, when performing chemical-mechanical polishing process within the identical time, the polished amount of time per unit can be reduced further, therefore, the thickness deviation of the burnishing surface of wafer can be reduced, thus provide and can regulate thickness environment more accurately.

Technical scheme

In order to solve technical problem as above, first embodiment of the present utility model provides chemical mechanical polishing apparatus, for carrying out polishing to the polishing layer of wafer, it is characterized in that, comprise: polishing plate, rotate in the mode contacted with the burnishing surface of above-mentioned wafer, polishing is carried out to above-mentioned burnishing surface; Slurries supply unit, carries out in the operation of polishing at above-mentioned wafer in the mode contacted with above-mentioned polishing plate, supply slurries; And thermostat unit, before above-mentioned polishing plate supply wafer, above-mentioned wafer is heated.

In order to improve the polished amount of the time per unit of polishing layer in chemical-mechanical polishing process of wafer, even if apply larger power to wafer, the polished amount of the time per unit of wafer also can not increase, therefore, can not shorten at starting stage required time, but, by starting chemical-mechanical polishing process with the state heated to wafer higher than the temperature of normal temperature, thus, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, thus, the main polishing stage that the polished amount of the time per unit of wafer polishing layer is increased can be entered within the shorter time.

So, by starting chemical-mechanical polishing process with the state heated to wafer higher than the temperature of normal temperature, the polished amount that can shorten time per unit keeps the time needed for the starting stage of lower state, therefore, the All Time needed for chemical-mechanical polishing process can be shortened, thus obtain the advantageous effects boosted productivity.

Thus, the utility model both can shorten the whole time needed for chemical-mechanical polishing process, the polished amount of chemical-mechanical polishing process time per unit polishing can be maintained by again less in the main polishing stage, such as, can by turning down wafer applied pressure etc., thus there is the effect providing and can be convenient to control to make environment that the polished amount deviation in wafer polishing face is comparatively little.

Now, the wafer that said temperature regulon is used for dropping in subtend chemical-mechanical polishing process heats, said temperature regulon is provided with shelves plate, above-mentioned temperature of shelving plate is higher than normal temperature, before chemical-mechanical polishing process is performed to above-mentioned wafer, the above-mentioned burnishing surface of above-mentioned wafer contacts with above-mentioned plate of shelving, and makes the heat shelving plate be delivered to wafer polishing face, and the temperature of the above-mentioned burnishing surface of wafer can be adjusted to higher than normal temperature.

Now, be preferably, above-mentioned plate of shelving keeps 35 DEG C ~ 200 DEG C.When the temperature of shelving plate is lower than 35 DEG C, be difficult to the level temperature of wafer brought up to higher than normal temperature, and when the temperature of shelving plate is more than 200 DEG C, will the distortion of wafer be caused.

In embodiment of the present utility model, said temperature regulon comprises: chamber, is chemical-mechanical polishing process and the wafer that supplies to above-mentioned polishing plate for keeping; And temperature regulation section, make the temperature of above-mentioned chamber be kept above normal temperature, can regulate the temperature of chamber by under the state containing wafer in above-mentioned chamber, by the heating temperatures of wafer to suitable temperature.

In the case, said temperature adjusting portion comprises: temperature sensor, for measuring the temperature of the inside of above-mentioned chamber; And warm-air supply portion, when the mensuration temperature measured by said temperature sensor is lower than assigned temperature, inside to above-mentioned chamber is injected by the air heated, and considers the slurries, the material of polishing pad, the raw material of wafer polishing layer that are used for chemical-mechanical polishing process, regulates temperature.Such as, in the scope of 30 DEG C ~ 180 DEG C, the temperature of the wafer dropping into chemical-mechanical polishing process is regulated.

On the other hand, said temperature adjusting portion comprises: shelve plate, for shelving the wafer before being supplied to above-mentioned polishing plate; Temperature sensor, for measuring above-mentioned temperature of shelving plate; And heater wire, when the mensuration temperature measured by said temperature sensor is lower than assigned temperature, above-mentioned plate of shelving is heated.Thus, the burnishing surface transferring heat from the bracket controlled by heater wire to wafer, the temperature of the burnishing surface of wafer is adjusted to 30 DEG C ~ 180 DEG C.

That is, the convective heat transfer that the gas be tempered that the temperature of wafer can supply by the inside to chamber produces regulates, and also can regulate by the heat of the bracket transmission of the inside from chamber.

In other embodiments of the present utility model, said temperature regulon can comprise pure water supply unit, and for the pure water of wafer supplying temperature higher than normal temperature, above-mentioned wafer is the wafer supplied to above-mentioned polishing plate to carry out chemical-mechanical polishing process.

Namely, for the temperature in the wafer polishing face of dropping into chemical-mechanical polishing process, to the supply of wafer polishing face by the pure water of temperature control, consider the slurries, the material of polishing pad, the raw material of wafer polishing layer that are used for chemical-mechanical polishing process, heat, make the temperature in wafer polishing face higher than normal temperature.Such as, in the scope of 30 DEG C ~ 180 DEG C, the temperature of the wafer dropping into chemical-mechanical polishing process is regulated.

Such as, above-mentioned pure water supply unit can comprise tank, and for above-mentioned wafer is soaked in pure water, above-mentioned pure water supply unit also can comprise pure water injection portion, sprays pure water for the above-mentioned burnishing surface to above-mentioned wafer.

Such as, the temperature of above-mentioned pure water is 35 DEG C ~ 100 DEG C.In the pure water supply unit of form wafer being soaked in tank, the integral surface of wafer receives the heat trnasfer from pure water, compared to the pure water supply unit be made up of pure water injection portion, can regulate lower by temperature.But pure water cannot be adjusted to more than 100 DEG C, therefore, when needs are heated to more than 100 DEG C, preferably, the convective heat transfer by gas or the heat conduction transmission by heater wire regulate the temperature in wafer polishing face.

On the other hand, the second embodiment of the present utility model provides chemical mechanical polishing apparatus, for carrying out polishing to the polishing layer of wafer, it is characterized in that, comprise: polishing plate, rotate in the mode contacted with the burnishing surface of above-mentioned wafer, polishing is carried out to above-mentioned burnishing surface; And slurries supply unit, carry out in the operation of polishing at above-mentioned wafer in the mode contacted with above-mentioned polishing plate, at least part of operation of chemical-mechanical polishing process, be adjusted to the slurries higher than normal temperature at least one supplying temperature in above-mentioned wafer and above-mentioned polishing plate.

In order to improve the polished amount of polishing layer time per unit in chemical-mechanical polishing process of wafer, even if apply larger power to wafer, the polished amount of the time per unit of wafer also can not increase, therefore, can not shorten at starting stage required time, but, by improving the supplying temperature of slurries the polishing environment for wafer starts chemical-mechanical polishing process with the state of temperature higher than normal temperature, thus, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, thus, the main polishing stage that the polished amount of the time per unit of wafer polishing layer is increased can be entered within the shorter time.

So, the utility model is by starting chemical-mechanical polishing process with the slurries supplied to chemical-mechanical polishing process higher than the temperature adjustment of normal temperature, the polished amount that can shorten time per unit keeps the time needed for the starting stage of lower state, therefore, the overall time needed for chemical-mechanical polishing process can be shortened, thus obtain the advantageous effects boosted productivity.

Thus, the utility model both can shorten the All Time needed for chemical-mechanical polishing process, the polished amount of chemical-mechanical polishing process time per unit polishing can be maintained by again less in the main polishing stage, such as, by turning down wafer applied pressure etc., thus the environment providing and can be convenient to control to make the polished amount deviation in wafer polishing face comparatively little can be had.

Now, in the incipient stage of the chemical-mechanical polishing process of above-mentioned wafer, temperature can be adjusted to and supply slurries higher than after normal temperature by above-mentioned slurries supply unit.Namely, in the process performing chemical-mechanical polishing process, the temperature of slurries can be made to remain state higher than normal temperature, but can because friction generates heat between the burnishing surface of wafer and polishing plate in the process performing chemical-mechanical polishing process, therefore, slurries supply unit only need supply in the incipient stage slurries be adjusted to higher than normal temperature temperature.

Now, above-mentioned incipient stage required time is defined as and performs needed for above-mentioned chemical-mechanical polishing process full-time less than 1/3rd.This be due to the whole activity times when chemical-mechanical polishing process through at least three/for the moment, the friction between wafer and polishing pad can cause being in the state of temperature higher than normal temperature.

That is, incipient stage here can be identical with the aforesaid starting stage, but unanimously non-essential.Although the type of slurries or polishing layer there are differences, though by wafer and polishing pad friction and make temperature higher than normal temperature, the time that the polishing velocity of the time per unit of the wafer in chemical-mechanical polishing process process uprises still there are differences.

Preferably, in the incipient stage of the chemical-mechanical polishing process of above-mentioned wafer, the temperature of the slurries supplied by above-mentioned slurries supply unit is more than 40 DEG C.But the temperature of slurries can according to the raw material of the type of slurries and wafer polishing layer, and can be more than 80 DEG C at the supplying temperature of incipient stage slurries, also can be about 30 DEG C.

Thus, preferably, when performing the chemical-mechanical polishing process of above-mentioned wafer, above-mentioned slurries supply unit supplies slurries after temperature being adjusted to the temperature lower than the incipient stage.In chemical-mechanical polishing process, when the caloric value produced when the friction by wafer and polishing pad is large, after the incipient stage terminates, slurries supply unit also can be adjusted to the temperature lower than normal temperature, whereby, the temperature of wafer periphery also can be made higher than normal temperature.

On the other hand, also temperature sensor can be comprised, for measuring the surface of above-mentioned polishing plate; Above-mentioned slurries supply unit keeps the mode in specified for temperature ranges to regulate the slurry temperature from above-mentioned slurries supply unit supply with the temperature measured by said temperature sensor.Whereby, consider the caloric value be performed between the wafer of chemical-mechanical polishing process and polishing pad, make the temperature of the wafer periphery be in chemical-mechanical polishing process keep the optimized temperature of chemical polishing that can make by slurries, the polished amount of constant and high-caliber time per unit can be kept.

On the other hand, the utility model is when regulating the temperature of slurries, parallel practice makes the operation of environment temperature higher than normal temperature of wafer in the incipient stage, said process had come by pure water more than above-mentioned polishing plate supply normal temperature before above-mentioned chemical-mechanical polishing process is implemented, thus the polished amount that can reduce time per unit keeps the initial time of reduced levels.

Such as, the temperature of above-mentioned pure water can be 50 DEG C ~ 100 DEG C.

And, above-mentioned pure water sprays the surface in above-mentioned polishing plate, the polishing pad of the polishing plate contacted with wafer is integrally heated, thus, even if the slurries that temperature is conditioned also can not cool immediately to polishing pad supply, keep supplied temperature while to wafer transferring, the temperature of the wafer of chemical-mechanical polishing process to be performed can be improved more significantly.

On the other hand, 3rd embodiment of the present utility model provides chemical mechanical polishing apparatus, for carrying out polishing to the polishing layer of wafer, it is characterized in that, comprise: polishing plate, be coated with polishing pad, above-mentioned polishing pad, by rotating in the mode contacted with the burnishing surface of above-mentioned wafer, carries out polishing to above-mentioned burnishing surface; And temperature regulation section, for regulating the temperature of above-mentioned polishing pad.

In order to improve the polished amount of the time per unit of polishing layer in chemical-mechanical polishing process of wafer, even if apply larger power to wafer, the polished amount of the time per unit of wafer also can not increase, therefore, can not shorten at starting stage required time, but, by improving the temperature of polishing pad in advance, the polishing environment of wafer is made to start chemical-mechanical polishing process with the state higher than normal temperature, thus, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, thus, the main polishing stage that the polished amount of the time per unit of wafer polishing layer is increased can be entered within the shorter time.

So, by starting chemical-mechanical polishing process with the state of the temperature adjustment polishing pad higher than normal temperature, the polished amount that can shorten time per unit keeps the time needed for the starting stage of lower state, therefore, the overall time needed for chemical-mechanical polishing process can be shortened, thus obtain the advantageous effects boosted productivity.

Thus, the utility model both can shorten the overall time needed for chemical-mechanical polishing process, the polished amount of chemical-mechanical polishing process time per unit polishing can be maintained by again less in the main polishing stage, such as, can by turning down wafer applied pressure etc., thus there is the effect providing and can be convenient to control to make environment that the polished amount deviation in wafer polishing face is comparatively little.

That is, in the incipient stage of the chemical-mechanical polishing process of above-mentioned wafer, temperature can be adjusted to higher than normal temperature by above-mentioned polishing pad.Namely, in the process performing chemical-mechanical polishing process, polishing pad can be heated all the time, but can because friction generates heat between the burnishing surface of wafer and polishing plate in the process performing chemical-mechanical polishing process, therefore, polishing pad can only be heated with the temperature higher than normal temperature in the incipient stage.

Preferably, the temperature of the above-mentioned polishing pad of above-mentioned polishing plate is defined as more than 40 DEG C in the incipient stage of the chemical-mechanical polishing process of above-mentioned wafer.But, in the temperature of the incipient stage of polishing pad, according to the raw material of the type of slurries and wafer polishing layer, can be able to be more than 80 DEG C at the supplying temperature of incipient stage slurries, also can be 40 DEG C as the case may be.

Thus, preferably, when performing the chemical-mechanical polishing process of above-mentioned wafer, above-mentioned polishing pad supplies slurries after temperature being adjusted to the temperature lower than the incipient stage.In chemical-mechanical polishing process, when the caloric value produced when the friction by wafer and polishing pad is large, after the incipient stage terminates, polishing pad also can be adjusted to the temperature lower than normal temperature, whereby, the temperature of wafer periphery also can be made higher than normal temperature.

On the other hand, in the utility model, by performing before above-mentioned chemical-mechanical polishing process to pure water more than above-mentioned polishing plate supply normal temperature, make temperature at incipient stage wafer periphery higher than normal temperature, thus the polished amount that can reduce time per unit is keeping low-level initial time.Such as, the temperature of above-mentioned pure water can be 50 DEG C ~ 100 DEG C.

Parallel or as an alternative, said temperature adjusting portion can irradiate adjustable radiant heat to improve the temperature of polishing pad by the position separated from above-mentioned polishing pad therewith.

Parallel or as an alternative, said temperature adjusting portion is located at the heater wire of above-mentioned polishing pad in also can comprising therewith.Further, above-mentioned heater wire its caloric value adjustable, regulates by the caloric value of heater wire, freely can regulate the temperature of polishing pad.

On the other hand, also can comprise temperature sensor, for measuring the temperature of above-mentioned polishing pad, the adjustable heat transmitted from the temperature regulation section of above-mentioned polishing pad of above-mentioned polishing pad, makes the temperature measured by said temperature sensor keep specified for temperature ranges.Whereby, consider the caloric value of wafer in chemical-mechanical polishing process and polishing pad, make the temperature of the wafer periphery be in chemical-mechanical polishing process keep the optimized temperature of chemical polishing that can make by slurries, the polished amount of constant and high-caliber time per unit can be kept.

On the other hand, 4th embodiment of the present utility model provides the rubbing head of chemical mechanical polishing apparatus, above-mentioned rubbing head is used under the state making wafer be positioned at downside, above-mentioned wafer is pressed on polishing pad and performs chemical-mechanical polishing process, comprise: body, be driven in rotation in above-mentioned chemical-mechanical polishing process; Barrier film, combines with above-mentioned body and together rotates with above-mentioned body, and between above-mentioned body mineralization pressure room, form base plate for locating above-mentioned wafer in bottom surface; And thermostat unit, for regulating the temperature of the wafer of the bottom surface being positioned at above-mentioned base plate.

By being configured to regulate by the temperature of thermostat unit to the barrier film base plate of the rubbing head of exerting pressure to wafer in chemical-mechanical polishing process, make the wafer-load for implementing chemical-mechanical polishing process in the lower rear flank of rubbing head, wafer is heated to above the temperature of normal temperature immediately.

Namely, in order to improve the polished amount of the time per unit of polishing layer in chemical-mechanical polishing process of wafer, even if apply larger power to wafer, the polished amount of the time per unit of wafer also can not increase, therefore, can not shorten at starting stage required time, but, as mentioned above, by starting chemical-mechanical polishing process with the state heated to wafer higher than the temperature of normal temperature, thus, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, thus, the effect in the main polishing stage of the polished amount increase entering the every subsection time making wafer polishing layer within the shorter time can be obtained.

Thus, by starting chemical-mechanical polishing process with the state heated to wafer higher than the temperature of normal temperature, the polished amount that can shorten time per unit keeps the time needed for the starting stage of lower state, therefore, the overall time needed for chemical-mechanical polishing process can be shortened, thus obtain the advantageous effects boosted productivity.

And, the utility model both can shorten the All Time needed for chemical-mechanical polishing process, the polished amount of chemical-mechanical polishing process time per unit polishing can be maintained by again less in the main polishing stage, such as, by turning down wafer applied pressure etc., thus the environment can being convenient to control to make the polished amount deviation in wafer polishing face comparatively little can be provided.

Now, said temperature regulon can be configured to, and the above-mentioned base plate of above-mentioned barrier film is provided with heater wire, and the caloric value produced according to the electric current putting on above-mentioned heater wire regulates the temperature of above-mentioned wafer.

Therefore, preferably, above-mentioned heater wire is adjusted to the temperature higher than normal temperature in the incipient stage of chemical-mechanical polishing process, and performs chemical-mechanical polishing process the temperature of above-mentioned wafer being adjusted under the state higher than the temperature of normal temperature.

In the case, above-mentioned incipient stage required time to be defined as needed for above-mentioned chemical-mechanical polishing process full-time less than 1/3rd.This be due to the whole activity times when chemical-mechanical polishing process through at least three/for the moment, the friction between wafer and polishing pad can cause being in the state of temperature higher than normal temperature.

Further, " incipient stage " recorded in claims of this description and utility model refer to arrive the caloric value caused by the friction between wafer and polishing pad by chemical-mechanical polishing process and till the optimized temperature that slurries generation chemical polishing is reacted during.Therefore, heat wafer along with in the incipient stage, the incipient stage is defined as lower, accounts for less than 1/3rd of whole activity times of chemical-mechanical polishing process.

That is, incipient stage here can specify identically with the aforesaid starting stage, but unanimously non-essential.This is because although the type of slurries or polishing layer there are differences, even if but by wafer and polishing pad friction and make temperature higher than normal temperature, the polishing velocity of the time per unit of the wafer in chemical-mechanical polishing process process uprises, or life period difference.

On the other hand, the above-mentioned base plate of above-mentioned barrier film comprises the region formed with dual mode, and above-mentioned heater wire is between dual above-mentioned base plate.In order to realize the assembling be more prone to, the heating plate that the panel of flexible materials is configured with heater wire can be configured between dual base plate.

After the above-mentioned incipient stage completing above-mentioned chemical-mechanical polishing process, in order to prevent making because of the heating caused by the friction of wafer and polishing pad the phenomenon that the temperature of wafer becomes too high, preferably, the caloric value produced by above-mentioned heater wire is reduced.

Controlling to implement temperature more accurately, also can comprising temperature sensor, for measuring the temperature of the above-mentioned base plate of above-mentioned barrier film; Said temperature regulon regulates in the mode making the measured value in said temperature sensor and remain in specified for temperature ranges,

On the other hand, said temperature regulon with utilize heater wire concurrently or independently, can carry out by the temperature of the gas of subtend above-mentioned balancing gate pit supply the mode that regulates and form.

Therefore, in the incipient stage of chemical-mechanical polishing process, said temperature regulon supplies the temperature higher than normal temperature to above-mentioned balancing gate pit.Similarly, the above-mentioned incipient stage is defined as less than 1/3rd of the activity time of the whole chemical-mechanical polishing process to above-mentioned wafer.

Further, after the above-mentioned incipient stage completing above-mentioned chemical-mechanical polishing process, the heat of the caloric value size that the friction between supply wafer and polishing pad produces is reduced.That is, to the gas of above-mentioned balancing gate pit's supply lower temperature.

Similarly, also temperature sensor can be comprised, for measuring the temperature of the gas supplied to above-mentioned balancing gate pit; Said temperature regulon regulates in the mode making the measured value in said temperature sensor and remain in specified for temperature ranges, thus can regulate the temperature of wafer more accurately.

In this description and the indoor temperature under authorizing " normal temperature " recorded in claims of utility model to refer to not take heat treated state separately, " normal temperature " recorded in claims of this description and utility model will be defined by 15 DEG C.

And, " proper temperature " recorded in this manual refer to consider wafer polishing layer material, the kind of slurries, the chemical-mechanical polishing process such as the material of polishing pad and service time parameter, both be easy to remove the trickle oxide-film produced after wafer polishing layer contacts with air, the temperature higher than normal temperature (such as, 30 DEG C ~ 180 DEG C) of optimization in wafer polishing of the chemical reaction of slurries can be completed again smoothly.

" starting stage " recorded in this manual is defined by when coming into effect chemical-mechanical polishing process, and the polished amount of time per unit keeps the low-level polishing stage.In the case, the polished amount " low " of time per unit may be defined as the stage kept with the level of less than 1/2nd of the polished amount at the time per unit in the main polishing stage of the polished amount " greatly " of time per unit after " starting stage ".That is, in figure 3, the region represented by A1 is " starting stage ", and in figure 3, the region represented by A2 is " main polishing stage ".

Stage till this description and the optimized temperature of authorizing " incipient stage " recorded in claims of utility model to be then defined as to arrive the caloric value caused by the friction between wafer and polishing pad by chemical-mechanical polishing process and making slurries generation chemical polishing react.Therefore, regulate polishing pad 511 with the temperature higher than normal temperature along with in the incipient stage, the incipient stage is then defined as lower, is no more than 1/3rd of whole activity times of chemical-mechanical polishing process.

The effect of utility model

As mentioned above, by the wafer of temperature after overregulating higher than normal temperature is dropped into chemical-mechanical polishing process and starts chemical-mechanical polishing process, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, thus, the advantageous effects of the time needed for starting stage that the polished amount that can shorten time per unit keeps with reduced levels can be obtained.

On the other hand, according to the utility model, in the starting stage of chemical-mechanical polishing process, by the slurries supplied to implement chemical-mechanical polishing process are supplied with the temperature higher than normal temperature, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, thus, the advantageous effects of the time needed for starting stage that the polished amount that can shorten time per unit keeps with reduced levels can be obtained.

And, according to the utility model, in the starting stage of chemical-mechanical polishing process, by the temperature of the polishing pad contacted with wafer polishing face is adjusted to higher than normal temperature, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, thus, the advantageous effects of the time needed for starting stage that the polished amount that can shorten time per unit keeps with reduced levels can be obtained.

And, according to the utility model, in the starting stage of chemical-mechanical polishing process, by the thermostat unit of rubbing head, make wafer-load for implementing chemical-mechanical polishing process after rubbing head, chemical-mechanical polishing process is implemented under the state that wafer is heated to above the temperature of normal temperature immediately, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, thus, the advantageous effects of the time needed for starting stage that the polished amount that can shorten time per unit keeps with reduced levels can be obtained.

Thus, according to the utility model, the overall time needed for chemical-mechanical polishing process can be shortened, thus can boost productivity.

And, it is less that the utility model can be maintained by the polished amount of chemical-mechanical polishing process time per unit polishing in the main polishing stage, such as, can by turning down wafer applied pressure etc., thus the effect providing and can be convenient to control to make environment that the polished amount deviation in wafer polishing face is comparatively little is provided.

Accompanying drawing explanation

Fig. 1 is the top view of the formation of the chemical mechanical polishing apparatus that expression is general.

Fig. 2 is the front view of Fig. 1.

Fig. 3 is according to the different time polished amount variation diagram by the chemical-mechanical polishing process of Fig. 1.

Fig. 4 is the top view of the chemical mechanical polishing apparatus of the first embodiment of the present utility model.

Fig. 5 represents the figure being applicable to the formation of the first thermostat unit of the thermostat unit of Fig. 4.

Fig. 6 represents the figure being applicable to the formation of the second thermostat unit of the thermostat unit of Fig. 4.

Fig. 7 represents the figure being applicable to the formation of the 3rd thermostat unit of the thermostat unit of Fig. 4.

Fig. 8 is the top view of the chemical mechanical polishing apparatus of the second embodiment of the present utility model.

Fig. 9 is the precedence diagram of the method for work of chemical mechanical polishing apparatus for illustration of Fig. 5.

Figure 10 is the top view of the chemical mechanical polishing apparatus of the 3rd embodiment of the present utility model.

Figure 11 is the front view of Figure 10.

Figure 12 is the schematic diagram being located at the heater wire of the polishing pad of Figure 10 and the formation of control part thereof in representing.

Figure 13 is the precedence diagram of the method for work of chemical mechanical polishing apparatus for illustration of Figure 10.

Figure 14 is the front view of the chemical mechanical polishing apparatus of other embodiments of the present utility model.

Figure 15 is the top view of Figure 14.

Figure 16 is the half sectional view of the rubbing head of the chemical mechanical polishing apparatus of the 4th embodiment of the present utility model.

Figure 17 is the enlarged drawing of " A " part of Figure 16.

Figure 18 is the figure of the formation of the heating plate representing Figure 17.

Figure 19 is the precedence diagram of the method for work of the rubbing head of chemical mechanical polishing apparatus for illustration of Figure 16.

Figure 20 is the half sectional view of the rubbing head of the chemical mechanical polishing apparatus of other embodiments of the present utility model.

Figure 21 is the precedence diagram of the method for work of the rubbing head of chemical mechanical polishing apparatus for illustration of Figure 20.

The explanation of Reference numeral

9,92,93,94: chemical mechanical polishing apparatus

100,200,300: thermostat unit 10: polishing plate

11: polishing pad 21s, 22s: base plate

30: slurries supply unit 110: shelve plate

120: heater wire 130,240: control part

190: pure water supply unit 201,202: rubbing head

210: chamber 220: gas temperature adjusting portion

230: warm-air supply portion 310: pure water supply unit

410: slurry temperature adjusting portion 420: control part

510: polishing plate 511: polishing pad

512: platform body 500: temperature regulation section

520: heating plate 525: heater wire

530: control part 540: heater wire temperature regulation section

620: radiant heat supply unit 710: heating plate

715: heater wire 720,820: control part

810: air pressure supply unit 830: gas temperature adjusting portion

Tm: temperature sensor W: wafer

Wx: the wafer before chemical-mechanical polishing process supply

Detailed description of the invention

Below, with reference to Fig. 4 ~ Fig. 7, the chemical mechanical polishing apparatus 9 of the first embodiment of the present utility model is described in detail.But, in the process that the utility model is described, will the explanation for known function or formation be omitted, with main idea clearly of the present utility model, for same or analogous function or formation, same or analogous Reference numeral will be adopted.

As shown in the figure, the chemical mechanical polishing apparatus 9 of the first embodiment of the present utility model is the chemical mechanical polishing apparatus for carrying out polishing to the polishing layer of wafer W, comprise: polishing plate 10, by rotating in the mode contacted with the burnishing surface of wafer W, polishing is carried out to wafer polishing face; Rubbing head 20, the state for the polishing pad 11 being contacted with polishing plate 10 with wafer polishing face is exerted pressure downwards wafer W; Adjuster 40, for carrying out upgrading to the surface of polishing pad 11; Slurries supply unit 30, for supplying slurries in wafer W is with the operation of the mode polishing contacted with above-mentioned polishing plate 10; Thermostat unit 100,200,300, before supplying wafer W to polishing plate 10, for heating wafer.

Namely, the chemical mechanical polishing apparatus 9 of the first embodiment of the present utility model is to be provided with thermostat unit 100,200,300 with the difference of the formation of the chemical mechanical polishing apparatus 1 in the past shown in Fig. 1 and Fig. 2, said temperature regulon 100,200,300 in wafer W in order to perform before chemical-mechanical polishing process is supplied to polishing plate 10, the temperature of the burnishing surface of wafer W is adjusted to the temperature of more than normal temperature.

As an example of said temperature regulon, figure 5 illustrates the first thermostat unit 100.First thermostat unit 100 comprises: shelve plate 110, is adjusted to the temperature higher than normal temperature; Heater wire 120, for regulating the temperature of the inside of shelving plate 110; Temperature sensor Tm, for measuring the temperature of shelving plate 110; Control part 130, shelves the mensuration temperature of plate 110 from temperature sensor Tm reception and controls the electric current putting on heater wire 120; Bracket 140, shelves waiting wafer W o, to perform chemical-mechanical polishing process.

In the case, shelve plate 110 by thermal conductivity and heat resistance outstanding and be not easily melted in heat material formed.Such as, can be formed by the raw material such as metal or slabstone.Therefore, be formed as rising because of the temperature being held on the wafer W x shelved on plate 110 and producing the material of chemical reaction with wafer W x.

Heater wire 120 is configured at the inside of shelving plate 110 equably, and is configured to carry out regulation heating amount by the electric current putting on heater wire 120.In other embodiments of the present utility model, the electric current putting on heater wire 120 can keep constant, but can control the temperature of shelving plate 110 by the ON/OFF of electric current.

Temperature sensor Tm carries out continuing to measure and monitor for the contactless temperature of shelving the upper surface of plate 110 of carrying out heat trnasfer to wafer W x of contact, transmits the temperature measured to control part 130.

Control part 130 intermittently controls the size putting on the electric current of heater wire 120, within the specified for temperature ranges (such as, 35 DEG C ~ 200 DEG C) the temperature measuring value transmitted by temperature sensor Tm being in shelve plate 110.

Whether now, shelve the assigned temperature of plate 110 and inconsistent, be that the parameter of the chemical-mechanical polishing process such as oxidation film layer or metal level, slurries, the service time of polishing pad, predetermined polished amount is determined by considering wafer polishing layer.Thus, the temperature of the burnishing surface of wafer W is adjusted to compared to shelving the lower slightly proper temperature scope of 30 DEG C ~ 180 DEG C of plate 110.

Bracket 140 is wafer W o waits place intending performing chemical-mechanical polishing process, in the accompanying drawings, illustrates with the state that multiple wafer W o is stacked for the ease of diagram, but preferably, by cartridge etc., multiple wafer W o keeps discontiguous state each other to wait for.

Shelve in plate 110 what so form, in order to perform chemical-mechanical polishing process, the wafer W x that will supply is moved 88 to the upper surface shelving plate 110 from bracket 140, by controlling the temperature of shelving the upper side of plate 110, with heat conduction form, heat is passed to the burnishing surface intending the wafer W x supplied to polishing plate 10, the temperature in wafer polishing face is adjusted to the temperature (such as, 50 DEG C ~ 120 DEG C) higher than normal temperature.

Then, rubbing head 20 being held in the shelving by the upper surface (opposing face of burnishing surface) of wafer W x heated in plate 110 of the first thermostat unit 100, and moves to the polishing plate 10 performing chemical-mechanical polishing process.In other embodiments of the present utility model, directly move to without the need to rubbing head 20 and shelve plate 110, but by the independently media unit such as robot or take off arm, transfer to rubbing head 20 from shelving plate 110.

So, first thermostat unit 100 by with heater wire 120 to being heat resistance raw material and the raw-material panel 110 of outstanding thermal conductivity heats, and the wafer W x before subtend polishing plate 10 supply heats, and therefore, wafer polishing face can be heated to more than 100 DEG C.As mentioned above, along with the wafer W x devoting chemical-mechanical polishing process is supplied to the state higher than normal temperature, preferably, be supplied to the state being heated to 50 DEG C ~ 90 DEG C, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, draw by experiment, in chemical-mechanical polishing process, can low-level starting stage (A1 of Fig. 3) required time T1 be kept to foreshorten to less than 1/10th of whole chemical-mechanical polishing process required time Te the polished amount of time per unit.

Thus, the utility model not only can boost productivity by shortening the overall time needed for chemical-mechanical polishing process, main polishing stage (A2 of Fig. 3) required time can also be extended fully further, thus the effect that execution controls more accurately can be obtained, make the inclined extent of polished amount reducing to produce along with the position of the burnishing surface of wafer in the main polishing stage.

Below, with reference to Fig. 6, other embodiments of the present utility model are described.But, in the process that the second embodiment of the present utility model is described, for the structure similar to the structure of aforesaid embodiment, effect, effect, effect, effect, relevant explanation, with clear and definite the present embodiment will be omitted.

On the other hand, the second thermostat unit 200 for the chemical mechanical polishing apparatus of other embodiments of the present utility model can comprise: chamber 210, for keeping for chemical-mechanical polishing process and to polishing plate 10 supply wafer W o, Wx; And temperature regulation section, for keeping the temperature of chamber 210 higher than normal temperature.

In the case, preferably, chamber 210 is formed with complete hermetic state, but can be formed in mode to be opened/closed by the path for the wafer W be tempered being passed through to the mobile unit of polishing plate 10 movement.

Further, temperature regulation section comprises: temperature sensor Tm, for measuring the temperature of the inside of chamber 210; Control part 240, receives the mensuration temperature value measured by temperature sensor Tm, when measuring the assigned temperature of temperature value lower than chamber 210, carries out controlling making the inside to chamber 210 to inject by the air that heats or gas; Gas temperature adjusting portion 220, heats air or gas by control part 240; Warm-air supply portion 230, makes the air that is tempered in gas temperature adjusting portion 220 or gas flow into the inside of chamber 210; Handle part 250, when being necessary directly to inject hot blast, for adsorbing and holding wafer W, and can move by drive division M.

Thus, temperature regulation section not only can control the temperature of the inside of chamber 210, for then to the wafer W x that chemical-mechanical polishing process drops into, can make directly to inject hot blast 99 from warm-air supply portion 230, make the assigned temperature value arriving wafer W x more exactly.

On the other hand, bracket 260 is wafer W o waits place intending performing chemical-mechanical polishing process, in the accompanying drawings, illustrate with the state that multiple wafer W o is stacked for the ease of diagram, but, preferably, by cartridge etc., multiple wafer W o keeps discontiguous state each other to wait for.

That is, in bracket 260 in waiting multiple wafer W o, the mode exposed with the burnishing surface of the wafer W x of pending chemical-mechanical polishing process is adsorbed by handle part 250 and is held, by drive division M to move close to the mode in warm-air supply portion 230.Further, warm-air supply portion 230 is to the inside supply hot blast of chamber.

So, second thermostat unit 200 is by controlling the temperature of the inside of chamber 210, not only can the multiple wafer (Wo of disposable adjustment, Wx) temperature, but also can heat the burnishing surface intending the wafer W x supplied to polishing plate 10 with the hot blast of gaseous state (comprising steam), thus, more than 100 DEG C can be heated to.

On the other hand, although not shown, second thermostat unit 200 is similar to the first thermostat unit 100 disclosure, be configured to also be provided with in the inside of chamber 210 shelve plate, shelve on plate and be provided with heater wire, as the replacement scheme in warm-air supply portion, the wafer W x come before subtend polishing plate 10 supplies by the heat conduction of shelving plate heats.

Below, with reference to Fig. 7, other embodiments of the present utility model are described.But, in the process that other embodiments of the present utility model are described, the knot similar to the structure of aforesaid embodiment, effect, effect is formed, acts on, effect, relevant explanation will be omitted, with this 3rd embodiment clear and definite.

On the other hand, for the 3rd thermostat unit 300 of the chemical mechanical polishing apparatus of other embodiments of the present utility model, to being supplied to the wafer W x supplying temperature of chemical-mechanical polishing process to be performed of polishing plate 10 higher than the pure water 77 of normal temperature, improve the temperature implementing the wafer polishing face of chemical-mechanical polishing process in polishing plate 10.

For this reason, as shown in Figure 7, in the multiple wafer W o being held on bracket 340, by rubbing head 20 or transfer unit (comprising take off arm or robot) writing and presenting the wafer W x implementing chemical-mechanical polishing process, rubbing head 20 or transfer unit move to the upside of pure water supply unit 310.

When detecting that wafer W x is positioned at the upside of pure water supply unit 310 by the detecting sensor 320 being arranged at pure water supply unit 310, spray to the burnishing surface of wafer W the pure water 77 be adjusted to higher than the temperature of normal temperature by pure water supply unit 310, make the burnishing surface of wafer W reach assigned temperature higher than normal temperature.

Thus, the burnishing surface of wafer is heated to the temperature of the chemical reaction that can produce slurries immediately, the polished amount that can shorten time per unit in chemical-mechanical polishing process keeps low-level starting stage A1 required time, and can realize the additional effect of the foreign matter can removing the wafer polishing face of being attached to.

On the other hand, although not shown, pure water supply unit is formed by the tank be contained with through thermoregulator pure water, can by transfer unit by chemical-mechanical polishing process to be performed to polishing plate transfer before wafer W x soak regulation between (such as, during a upper wafer implements chemical-mechanical polishing process), also the temperature in wafer polishing face can be brought up to the assigned temperature higher than normal temperature.

Along with temperature equably, wafer integral surface is heated, can obtain reduce further move to polishing plate 10 from the 3rd temperature regulation section 300 and during chemical-mechanical polishing process, the advantage of issuable heat loss in burnishing surface.

Further, although not shown, the temperature regulation section of chemical mechanical polishing apparatus of the present utility model can heat the wafer polishing face be supplied to before polishing plate by radiant heat.That is, pure water supply unit can be substituted by radiant heat supply unit.

According to the utility model as constructed as above, for the wafer implemented before chemical-mechanical polishing process, consider the type of slurries or the raw material of polishing layer, the parameter of the chemical-mechanical polishing process such as polished amount, by conduction-type heat trnasfer, convection type heat transmits, the various thermaltransmission modes such as radiant heat transmission, wafer polishing face is regulated with the suitable temperature higher than normal temperature, thus, required time T1 in the starting stage of the polished amount showing low-level time per unit after chemical-mechanical polishing process starts (A1 of Fig. 3) is minimized, shorten the chemical-mechanical polishing process required overall time and boost productivity, the advantageous effects that the environment that can control to make the polished amount deviation of the position in each wafer polishing face to diminish is provided can be obtained.

Below, with reference to the accompanying drawings 8 and the chemical mechanical polishing apparatus 9 of Fig. 9 to the second embodiment of the present utility model be described in detail.But, in the process that the utility model is described, will the explanation for known function or formation be omitted, with main idea clearly of the present utility model, for same or analogous function or formation, same or analogous Reference numeral will be adopted.

As shown in the figure, the chemical mechanical polishing apparatus 9 of the second embodiment of the present utility model is as the chemical mechanical polishing apparatus for carrying out polishing to the polishing layer of wafer W, comprise: polishing plate 10, be coated with polishing pad 11, above-mentioned polishing pad 11, by rotating in the mode contacted with the burnishing surface of wafer W, carries out polishing to wafer polishing face; Rubbing head 20, the state for the polishing pad 11 being contacted with polishing plate 10 with wafer polishing face is exerted pressure downwards wafer W; Adjuster 40, for carrying out upgrading to the surface of polishing pad 11; Slurries supply unit 30, for supplying through thermoregulator slurries in wafer W is with the operation of the mode polishing contacted with above-mentioned polishing plate 10; Slurry temperature adjusting portion 410, for regulating the temperature of the slurries supplied by slurries supply unit 30; Temperature sensor Tm, for measuring the temperature of polishing pad 11; Control part 420, receives the measured value of the temperature of polishing pad 11, carries out controlling the temperature to supplied slurries is controlled from temperature sensor Tm; Pure water supply unit 190, before chemical-mechanical polishing process starts, the pure water 99 more than the surface application normal temperature of polishing pad 11.

Although not shown, but above-mentioned slurry temperature adjusting portion 410 carries out heating or cooling to the slurries before polishing pad 11 supplies for by slurries supply unit 30, makes to control to be required temperature.Such as, slurries temporarily can be contained in accepting groove, be undertaken heating or cooling by heater wire or freeze cycle, can by the heater wire be connected to from slurry tank on the transfer tube of slurries supply unit 30 or freeze cycle to regulate temperature.

The temperature be conditioned in slurry temperature adjusting portion 410 is adjusted to, and when slurries arrive the wafer W in chemical-mechanical polishing process, can make the temperature that the chemical polishing operation by slurries is normally implemented.Such as, when the optimum temperature of the chemical reaction by slurries is 40 DEG C, consider peripheral temperature, slurry temperature adjusting portion 410 regulates with the slightly high-temperature of 43 DEG C ~ 47 DEG C in slurries supply unit 30, the slurries supplied to polishing pad 11 flow in the process of wafer W, even if cause cooling because of peripheral temperature, also may be controlled to as reaching optimum temperature at the wafer periphery implementing chemical-mechanical polishing process.

Said temperature sensor Tm measures and applies pressure to { with the direction of rotation of polishing pad for the benchmark } front of rubbing head 20 of wafer W and the temperature of the polishing pad 11 at rear.When the front of rubbing head 20 and rear all measure the temperature of polishing pad 11, the temperature before and after preferably measuring by wafer, the temperature occurred with mean value calculation chemical-mechanical polishing process.Temperature sensor Tm can use touch sensor, but is in rotation status due to polishing pad 11, therefore, preferably, uses noncontacting proximity sensor.

Thus, by the heat produced in the mechanical polishing process of wafer and polishing pad 11, the variations in temperature around wafer W can be detected more exactly.

Above-mentioned control part 420 controls the temperature of slurries by receiving the temperature value measured by temperature sensor Tm.Namely, when being in the temperature around the wafer W in chemical-mechanical polishing process and exceeding the optimum temperature of the chemical polishing that slurries occur, control part 420 controls, make the temperature reducing slurries in slurry temperature adjusting portion 410, when being in the temperature around the wafer W in chemical-mechanical polishing process and not reaching the optimum temperature of the chemical polishing that slurries occur, control part 420 controls, make the temperature improving slurries in slurry temperature adjusting portion 410, guide the temperature of wafer periphery to impel the chemical polishing by slurries normally to carry out.

Now, in the process implementing chemical-mechanical polishing process, mechanical friction between wafer W and polishing pad 11 can produce heat, therefore, preferably, when the time of the incipient stage through being equivalent to chemical-mechanical polishing process, by the caloric value caused by the friction between wafer W and polishing pad 11, control, make the temperature reducing the slurries supplied from slurries supply unit 30 gradually.Thus, the temperature of wafer W periphery can remain the proper temperature higher than normal temperature.

Before coming into effect chemical-mechanical polishing process, above-mentioned pure water supply unit 190 sprays the pure water higher than normal temperature (such as, 35 DEG C ~ 100 DEG C), guides the temperature of polishing pad 11 higher than normal temperature.Thus, the incipient stage started at chemical-mechanical polishing process can be prevented, when supplying to polishing pad 11 from slurries supply unit 30 through thermoregulator slurries, the slurries supplied are through polishing pad 11 and in the process of wafer W transmission, the temperature of slurries causes the phenomenon of excessive step-down because of the heat exchange with periphery.

In the chemical mechanical polishing apparatus of the present utility model 9 formed as mentioned above, be configured to the incipient stage at chemical-mechanical polishing process, after overregulating, temperature to supply to polishing pad 11 higher than the slurries of normal temperature and flows into wafer W, make the starting stage at chemical-mechanical polishing process, the film being covered in wafer polishing layer can be removed in high temperature environments more rapidly, promote machine glazed finish, and for the temperature that the chemical reaction setting of slurries is best, thus the advantageous effects of further shortening optical polishing time can be obtained, can low-level starting stage required time be kept to foreshorten to less than 1/10th of whole polishing required time the polished amount of time per unit.

Thus, according to the utility model, not only can shorten the overall time needed for chemical-mechanical polishing process, boost productivity, and, the polished amount of chemical-mechanical polishing process time per unit polishing can be maintained by the main polishing stage less, thus the effect providing and can be convenient to control to make environment that the polished amount deviation in wafer polishing face is comparatively little can be provided.

Below, with reference to Fig. 9, the effect of the chemical mechanical polishing apparatus 9 formed as mentioned above is described in detail.

step 1: first, before startup chemical-mechanical polishing process, polishing pad 11 application temperature to polishing plate 10 is adjusted to the pure water (S410) of more than 40 DEG C.Thus, the temperature of polishing pad 11 is in the state higher than peripheral temperature.

step 2: and when starting chemical-mechanical polishing process under the state that wafer is positioned at the downside of rubbing head 20, the slurries be adjusted in slurry temperature adjusting portion 410 higher than normal temperature supply (S420) to polishing pad 11 through slurries supply unit 30.

For the temperature of the slurries supplied to polishing pad 11, consider and enter wafer W position desired path and time, preferably, compared to the proper temperature of the best, supply with the temperature exceeding 3 DEG C ~ 7.

Thus, the temperature around the wafer W of enforcement chemical-mechanical polishing process is kept above the temperature of normal temperature, and is in the state of the chemical polishing desired reaction temperature (that is, proper temperature) reaching slurries.Therefore, wafer polishing face is in the condition of high temperature higher than peripheral temperature, and thus, the oxide-film in wafer polishing face can more easily be removed, and mechanical polishing process is also more prone to.Further, along with the reaction of slurries completes smoothly, chemical polishing also can stably complete.

Therefore, the polished amount of chemical-mechanical polishing process time per unit from the incipient stage becomes large gradually, thus completes chemical-mechanical polishing process smoothly.Namely, starting stage (A1 of Fig. 3) in the past accounts for 1/1/3rd ~ bis-of the overall polishing process time, but, incipient stage as above, supply is through thermoregulator slurries, the polish temperature environment of wafer is provided by proper temperature, makes to keep the starting stage required time T1 of the polished amount of low-level time per unit to reduce to less than 1/10th of overall polishing time Te.

step 3: in chemical-mechanical polishing process process, measured the temperature of polishing pad 11 constantly by temperature sensor Tm and monitor, the temperature value measured transmits (S130) to control part 420.

On the other hand, in chemical-mechanical polishing process process, the caloric value caused by the friction between incipient stage wafer W and polishing pad 11 is very micro-, but once the polished amount through time per unit keeps starting stage of low-level state, caloric value will significantly increase.Thus, if the temperature of slurries to be remained on the temperature levels of the slurries that the incipient stage supplies, then the temperature of wafer periphery is caused to exceed proper temperature and become too high.

Therefore, when the time of 1/1/10th ~ tri-(that is, less than 1/3rd) through overall polishing time Te, rule of thumb the temperature of the slurries supplied from slurries supply unit 30 is adjusted to and supplies lower than after the temperature of incipient stage.Thus, for the environment temperature of the wafer W of enforcement chemical-mechanical polishing process, the increase part of the caloric value making the minimizing part of the amount of heat transfer transmitted by slurries and produce by the friction with polishing pad 11 forms balance, makes the incipient stage in chemically machine glazed finish stage complete time point to polishing and within the scope of proper temperature, keeps stability all the time.

Be different from aforesaid way, can also determine based on the mensuration temperature value transmitted to control part 420.Namely, when the mensuration temperature value of the polishing pad 11 transmitted to control part 420 exceedes the proper temperature scope of regulation, control part 420 is to slurry temperature adjusting portion 410 transfer instruction, to reduce the electric current putting on the heater wire of slurry temperature adjusting portion 410 or the time extending closedown, more energetically, make the slurries cooling be supplied to by freeze cycle, reduce the temperature (S140) of the slurries supplied to polishing pad 11.Similarly, when the mensuration temperature value of the polishing pad 11 transmitted to control part 420 does not reach specified for temperature ranges, control part 420 is to slurry temperature adjusting portion 410 transfer instruction, to improve the electric current or shortening shut-in time that put on the heater wire of slurry temperature adjusting portion 410, more energetically, supplementary heating is carried out for the slurries be supplied to by freeze cycle, improves the temperature of the slurries supplied to polishing pad 11.

Thus, by the temperature at the slurries of time point adjustment more accurately, from the polishing process of wafer to end, within the scope of the proper temperature of specifying, reliably chemical-mechanical polishing process can be implemented consistently.

The operation S130 of step 3 and operation S140 continues to carry out till chemical-mechanical polishing process terminates, and makes chemical-mechanical polishing process constant and perform equably within the unit interval.

As mentioned above, along with the wafer W to chemical-mechanical polishing process supplies the slurries higher than normal temperature after heating, preferably, by the slurries of the state for the heating temperatures given between 40 DEG C ~ 90 DEG C, wafer polishing layer can be removed more rapidly by machine glazed finish in high temperature environments, further shortening is by the chemical polishing time of the chemical reaction of slurries, thus the low-level starting stage required time T1 of polished amount maintenance significantly shortening time per unit in chemical-mechanical polishing process can be obtained, the effect boosted productivity, and main polishing stage (A2 of Fig. 3) required time can be extended further, therefore, thus the effect that execution controls more accurately can be obtained, make the inclined extent of polished amount reducing to produce along with the position of the burnishing surface of wafer in the main polishing stage.

Below, the chemical mechanical polishing apparatus 93 of 10 ~ Figure 15 to the 3rd embodiment of the present utility model is described in detail with reference to the accompanying drawings.But, in the process that the utility model is described, will the explanation for known function or formation be omitted, with main idea clearly of the present utility model, for same or analogous function or formation, same or analogous Reference numeral will be adopted.

As shown in the figure, the chemical mechanical polishing apparatus 93 of the 3rd embodiment of the present utility model is for carrying out the chemical mechanical polishing apparatus of polishing to the polishing layer of wafer W, comprise: polishing plate 510, polishing pad 511 is coated with in the upside of above-mentioned platform body 512, above-mentioned polishing pad 511, by rotating in the mode contacted with the burnishing surface of wafer W, carries out polishing to wafer polishing face; Rubbing head 20, the state for the polishing pad 511 being contacted with polishing plate 510 with wafer polishing face is exerted pressure downwards wafer W; Adjuster 40, for carrying out upgrading to the surface of polishing pad 11; Slurries supply unit 30, for supplying through thermoregulator slurries in wafer W is with the operation of the mode polishing contacted with above-mentioned polishing plate 10; Temperature regulation section 500, for regulating the temperature of polishing pad 511.

Above-mentioned polishing plate 510 is coated with polishing pad 511 at the upper surface of the platform body 512 of rotary actuation, and polishing pad 511 is rotation 511d in chemical-mechanical polishing process.Further, intervenient heating plate 520 between platform body 512 and polishing pad 511, above-mentioned heating plate 520 is distributed with heater wire 525.In order to accommodate heating plate 520, as shown in figure 11, at least one in platform body 512 with polishing pad 511 is formed with accepting groove.

Said temperature adjusting portion 500 comprises: heating plate 520, is inside located at polishing plate 510 and is configured with heater wire 525; Temperature sensor Tm, for measuring the surface temperature of polishing pad 511; Control part 530, regulates the temperature of polishing pad 511 by being received in the temperature value measured in temperature sensor Tm; Heater wire temperature regulation section 540, regulates the temperature of heater wire 525 according to the instruction of control part 530; Pure water supply unit 190, in the incipient stage of chemical-mechanical polishing process, the surface to polishing pad 511 is ejected through thermoregulator pure water 99.

As shown in figure 11, above-mentioned heating plate 520 is positioned at the bottom surface of the polishing pad 511 of polishing plate 510, and is configured with heater wire 525 equably.Heater wire 525 can adopt ON/OFF mode to disperse the caloric value of regulation, but preferably, can regulate the electric current putting on heater wire 525 by heater wire temperature regulation section 540 (V), thus regulates the caloric value of dispersing from heater wire 525.

Said temperature sensor Tm measures and applies pressure to { with the direction of rotation of polishing pad for the benchmark } front of rubbing head 20 of wafer W and the temperature of the polishing pad 511 at rear.When the front of rubbing head 20 and rear all measure the temperature of polishing pad 11, the temperature before and after preferably measuring by wafer, the temperature occurred with mean value calculation chemical-mechanical polishing process.Temperature sensor Tm can adopt cordless to measure the surface temperature of polishing pad 511, can also in be located at polishing pad 511 and with the internal temperature of way of contact mensuration polishing pad 511.

Thus, by the heat produced in the mechanical polishing process of wafer and polishing pad 11, can detect that the temperature around wafer W changes more exactly.

Above-mentioned control part 530 is received in the temperature value measured by temperature sensor Tm in chemical-mechanical polishing process, when the temperature of polishing pad 511 exceeds specified for temperature ranges, regulates the caloric value in heater wire 525 by heater wire temperature regulation section 540.Now, when controlling the caloric value in heater wire 525 on/off manner, by regulating the time span of closing to regulate, and when controlling with current control mode, regulate by regulating the size putting on the electric current of heater wire 525.

Namely, when being in the temperature around the wafer W in chemical-mechanical polishing process and exceeding proper temperature scope, control part 530 controls, to be reduced in the temperature of heater wire 525 in heater wire temperature regulation section 540, when being in the temperature around the wafer W in chemical-mechanical polishing process and not reaching proper temperature scope, control part 530 controls, to improve the temperature of heater wire 525 in heater wire temperature regulation section 540, the temperature of wafer periphery is guided to impel by the chemical polishing of slurries and all can normally carry out by the machine glazed finish of friction.

On the other hand, in the process of carrying out chemical-mechanical polishing process, because the mechanical friction of wafer W and polishing pad 511 produces heat, therefore, preferably, when the time of the incipient stage through being equivalent to chemical-mechanical polishing process, by the caloric value caused by the friction between wafer W and polishing pad 511, control, make the temperature reducing heater wire 525 gradually.Thus, the temperature of wafer W periphery can remain the proper temperature higher than normal temperature.

Now, the scope of being attempted the proper temperature kept by control part 530 by polishing pad 511 is, can come oxidized in atmosphere to the polishing layer of wafer like a cork by mechanical friction and film that is that formed carries out the temperature of polishing, be also the reaction temperature for the slurries of chemical polishing in chemical-mechanical polishing process.Therefore, the proper temperature of polishing pad 511 is also inconsistent, the parameter of the chemical-mechanical polishing process such as the type of the polishing pad that the kind of the type should considering the polishing layer of wafer and the slurries that use, wafer polishing face contact and state, make the temperature keeping the polishing optimized in wafer, be defined as more than 40 DEG C substantially.

Control part 530 carries out controlling to generate heat by heater wire 525, make at the proper temperature starting to reach before chemical-mechanical polishing process higher than normal temperature, thus chemically the incipient stage of mechanical polishing process rises carry out chemical-mechanical polishing process within the scope of proper temperature to make wafer W.Thus, chemically the incipient stage in machine glazed finish stage rises and just performs chemical-mechanical polishing process with the state close to proper temperature higher than normal temperature, thus can shorten starting stage (A1 of Fig. 3) duration T 1 of the polished amount that can keep low-level time per unit.

Before chemical-mechanical polishing process starts, above-mentioned pure water supply unit 190 sprays higher than normal temperature temperature (such as, 35 DEG C ~ 500 DEG C) pure water, when chemical-mechanical polishing process starts, guide the temperature of polishing pad 511 to keep apparently higher than the state of normal temperature.Thus, can prevent in the incipient stage starting chemical-mechanical polishing process, when thermoregulator slurries are supplied to polishing pad 511 by slurries supply unit 30, the slurries supplied are through polishing pad 511 and in the process of wafer W transmission, be subject to the impact of the temperature of supplied slurries, the temperature of wafer perimeter becomes the phenomenon lower than proper temperature.

In the chemical mechanical polishing apparatus of the present utility model 93 formed as mentioned above, in the incipient stage of chemical-mechanical polishing process, polishing pad 511 is adjusted to the temperature higher than normal temperature, make the starting stage at chemical-mechanical polishing process, the film being covered in wafer polishing layer can be removed in high temperature environments more rapidly, promote machine glazed finish, and for the temperature that the chemical reaction setting of slurries is best, thus can shortening optical polishing time further, can low-level starting stage required time be kept to foreshorten to less than 1/10th of whole polishing required time the polished amount of time per unit.

Thus, according to the utility model, not only can shorten the overall time needed for chemical-mechanical polishing process, boost productivity, and, the polished amount of chemical-mechanical polishing process time per unit polishing can be maintained by the main polishing stage less, thus the environment providing and can be convenient to control to make the polished amount deviation in wafer polishing face comparatively little can be provided.

Below, with reference to Figure 13, the effect of the chemical mechanical polishing apparatus 93 of the 3rd embodiment of the present utility model formed as mentioned above is described in detail.

step 1: first, before startup chemical-mechanical polishing process, polishing pad 11 application temperature to polishing plate 10 is adjusted to the pure water (S510) of more than 40 DEG C.Thus, the temperature of polishing pad 11 is in the state higher than peripheral temperature.

step 2: and, before starting chemical-mechanical polishing process under the state being positioned at the downside of rubbing head 20 at wafer, by heater wire temperature regulation section 540 to regulate the temperature (S520) of polishing pad 511 higher than the proper temperature of specifying of normal temperature.Even if the caloric value produced by the heater wire 525 of the downside being arranged at polishing pad 20 is not enough to make the temperature of polishing pad 511 to keep proper temperature, by the temperature of the pure water 99 applied to the surface integral of polishing pad 511 by pure water supply unit 190, at short notice the temperature of polishing pad 511 can be brought up to proper temperature.

For the proper temperature of the regulation of polishing pad 11, whether be metal level or oxide layer, the kind of slurries, the material of polishing pad and useful life etc., rule of thumb preset if can consider wafer polishing layer.

Therefore, the temperature performing the wafer W periphery of chemical-mechanical polishing process is kept above the state of normal temperature, and is in the state of the reaction temperature needed for the chemical polishing reaching slurries.Therefore, wafer polishing face is in the condition of high temperature higher than peripheral temperature, can remove the oxide-film in wafer polishing face like a cork, and can complete mechanical polishing process more like a cork.Along with the reaction of slurries completes smoothly, chemical polishing also can stably complete.

That is, the polished amount of chemical-mechanical polishing process time per unit from the incipient stage becomes gradually to go forward side by side greatly and becomes owner of the polishing stage, and chemical-mechanical polishing process accounts for the major part of whole operation smoothly.Namely, starting stage (A1 of Fig. 3) in the past accounts for 1/1/3rd ~ bis-of the overall polishing process time, but, incipient stage as above, by the temperature of polishing pad 511 being adjusted to suitable temperature and providing best temperature environment to the polishing of wafer, can low-level starting stage required time T1 be kept to reduce to less than 1/10th of overall polishing time Te the polished amount of time per unit.

step 3: in chemical-mechanical polishing process process, measured the temperature of polishing pad 11 constantly by temperature sensor Tm and monitor, the temperature value measured transmits (S530) to control part 520.

On the other hand, in chemical-mechanical polishing process process, the caloric value caused by the friction between incipient stage wafer W and polishing pad 11 is very micro-, but once the polished amount through time per unit keeps starting stage of low-level state, caloric value will significantly increase.Thus, if the temperature of polishing pad 511 to be remained on the proper temperature of incipient stage, then the temperature of wafer periphery is caused to become too high.

Therefore, when the time through 1/1/10th ~ tri-(that is, less than 1/3rd) of overall polishing time Te, the temperature of polishing pad 511 supplies after being adjusted to the temperature lower than the incipient stage.Thus, for the environment temperature of the wafer W of enforcement chemical-mechanical polishing process, the increase part of the caloric value making the minimizing part of the amount of heat transfer transmitted by heater wire 525 and produce by the friction with polishing pad 511 forms balance, makes the incipient stage in chemically machine glazed finish stage complete time point to polishing and can keep stability within the scope of proper temperature all the time.

Be different from aforesaid way, can also determine based on the mensuration temperature value transmitted to control part 530 by temperature sensor Tm.Namely, when the mensuration temperature value of the polishing pad 11 transmitted to control part 530 exceedes the proper temperature scope of regulation, control part 530 is to heater wire temperature regulation section 540 transfer instruction, putting on the electric current of heater wire 525 or the time of prolongation closedown by reducing by heater wire temperature regulation section 540, being reduced in the caloric value (S540) in polishing pad 511.Similarly, when the mensuration temperature value of the polishing pad 511 transmitted to control part 530 does not reach specified for temperature ranges, control part 530 is to heater wire temperature regulation section 540 transfer instruction, can the electric current of heater wire 525 be put on by improving heater wire temperature regulation section 540 or shorten the shut-in time, improve the temperature of polishing pad 11.

Thus, by being located at the caloric value in the heater wire 525 of polishing pad 511 in time point adjustment more accurately, from the polishing process of wafer to end, within the scope of the proper temperature of specifying, reliably chemical-mechanical polishing process can be implemented consistently.

The operation S530 of step 3 and operation S540 continues to carry out till chemical-mechanical polishing process terminates, and makes chemical-mechanical polishing process can be constant and perform equably within the unit interval.

As mentioned above, along with the wafer W to chemical-mechanical polishing process supplies the polishing pad 511 higher than normal temperature after heating, preferably, by the polishing pad 511 of the state for the heating temperatures given between 40 DEG C ~ 200 DEG C, wafer polishing layer can be removed more rapidly by machine glazed finish in high temperature environments, further shortening is by the chemical polishing time of the chemical reaction of slurries, thus the low-level starting stage required time T1 of polished amount maintenance significantly shortening time per unit in chemical-mechanical polishing process can be obtained, the effect boosted productivity.And main polishing stage (A2 of Fig. 3) required time can be extended further, therefore, thus the effect that execution controls more accurately can be obtained, make the inclined extent of polished amount reducing to produce along with the position of the burnishing surface of wafer in the main polishing stage.

On the other hand, in other embodiment 93' of the present utility model, as shown in Figure 14 and Figure 15, for use heater wire 525 to regulate the temperature of polishing pad 511, parallel or as an alternative therewith, also have temperature regulation section 660, said temperature adjusting portion 660 can regulate the temperature of polishing pad 511 by irradiation hyperthermia radiation radiation of heat thermal exposure device 620.

That is, by applying radiant heat to the appointed area 620A of polishing pad 511 or interrupting applying radiant heat with the temperature of proper temperature maintenance polishing pad 511.In the drawings, in chemical-mechanical polishing process, be positioned at the front part of wafer W to the region 620A that polishing pad 511 irradiates by radiant heat irradiator 620, but above-mentioned zone is not limited, radiant heat Rq can be transmitted by larger area to polishing pad 511.But, when measuring the temperature of polishing pad 511 by temperature sensor Tm in the region 620A that radiant heat Rq is passed, measured value distortion can be caused because of radiant heat Rq, therefore, preferably, in the area test temperature that radiant heat Rq is not passed.

Such as, in chemical-mechanical polishing process with the direction of rotation 511d of polishing pad 511 for benchmark, as shown in figure 15, radiant heat Rq irradiates to the front part region 620A of wafer W, and the rear quadrate part of the temperature measuring ground point selection wafer W of polishing pad 511 can obtain more correct measured value.

The work that other of formation described above are implemented in the work of dynamics chemical mechanical polishing apparatus and the 3rd embodiment is same or similar.

According to the utility model formed as mentioned above, by starting in the starting stage of chemical-mechanical polishing process to regulate with the proper temperature pair polishing pad contacted with wafer polishing face 511 higher than normal temperature, the film being covered in wafer polishing layer can be removed more rapidly, further shortening is by the chemical polishing time of the chemical reaction of slurries, thus the polished amount that can shorten time per unit keeps low-level starting stage required time T1, therefore, can boost productivity by shortening All Time needed for chemical-mechanical polishing process, the advantageous effects providing and can be convenient to control to make the polished amount deviation in wafer polishing face my little environment can be provided.

Below, with reference to the accompanying drawings the rubbing head 201 of the chemical mechanical polishing apparatus of the 4th embodiment of the present utility model is described in detail.But, in the process be described of the present utility model, will the explanation for known function or formation be omitted, with main idea clearly of the present utility model, for same or analogous function or formation, same or analogous Reference numeral will be adopted.

As shown in the figure, the rubbing head 201,202 of the chemical mechanical polishing apparatus of the 4th embodiment of the present utility model comprises: body 25, and the driving force by outside carries out rotary actuation; Barrier film 21,22, body 25 is fixed with fixed lobes, mineralization pressure room C1, C2, C3, C4, C5 between fixed lobes; Snap ring 26, coated barrier film 21,22 is around; And thermostat unit 700, for regulating the temperature of the wafer W of the bottom surface being loaded into barrier film 21,22.

Above-mentioned body 25 is with the general designation of the part in the part of integral manner rotary actuation except snap ring 26 and barrier film 21,22 at the rotary driving force by outside.

Above-mentioned barrier film 21,22 comprises: base plate, in disc-shape, exerts pressure with the state making wafer W be positioned at bottom surface; Side 21a, upwards extends from the edge of base plate with ring-type, and end combines with body 25; Fixed lobes 22a, upwards extends with ring-type between the center of base plate and side 21a, and combines with body 25.

In the case, as shown in figure 17, barrier film 21,22 is made up of dual base plate, and upside barrier film 22 is formed with fixed lobes 22a, and downside barrier film 21 is formed side 21a.Being formed in of the dual barrier film formed by dual mode is filed an application by the applicant and No. 1196651st, the Korean Patent mandate publication completing Pat. Registration discloses, and the specified particular of this publication is as the part of this description.

As shown in figure 17, said temperature regulon 700 is provided with the heating plate 710 being formed with heater wire 716 between upside barrier film 22 and downside barrier film 21, temperature sensor Tm for the temperature of Simultaneously test barrier film base plate 21s, 22s is arranged between dual barrier film 21,22, when the temperature value measured by temperature sensor Tm exceeds specified for temperature ranges, controlled by the size of electric current of control part 720 for the heater wire 716 being applied to heating plate 710.Thus, temperature sensor Tm carries out real-time temperature measuring and supervision for the wafer W of the bottom surface being positioned downside barrier film 21, based on this mensuration temperature value, can receive heat carry out temperature adjustment with specified for temperature ranges to wafer from heating plate 710.

Now, in order to avoid tilting between these barrier films 21,22 when arranging heating plate 710 between upside barrier film 22 and downside barrier film 21, at least one in the forward surface of these barrier films 21,22 is formed the groove can accommodating heating plate 710.

As shown in FIG. 17 and 18, heating plate 710 is arranged between barrier film base plate 21s, 22s, although not shown, the electric current supplying wire that heater wire 716 to heating plate 710 supplies electric current extends and is inserted in the connecting portion (not shown) being located at body 25 together with diaphragm sides 21a, completes setting thus.From above-mentioned connecting portion to control part 720, connected by body 25.

In the case, preferably, barrier film base plate 21s, 22s by along with balancing gate pit C1, C2 ..., the expansion of C5 and contraction and the flexible materials that carries out expanding and shrinking is formed, heating plate 710 is formed by the flexible materials carrying out expanding and shrinking along with barrier film base plate 21s, 22s too.Further, preferably formed with enough thick thickness, to prevent the heater wire 716 when heating plate 710 carries out expanding and shrinking also can not be damaged, and be formed by soft high raw material.In the case, heater wire 716 is not limited to the form of line, as long as generate heat when a current is applied be just referred to as heater wire, also can be formed by banded or tabular.

In chemical-mechanical polishing process, the major part of barrier film base plate 21s is in the state contacted with wafer, although the edge of barrier film base plate 21s is exposed a little, but still is in the hidden state by snap ring 26 relative to outside, therefore, the temperature from external measurement barrier film base plate 21s is difficult to.Therefore, said temperature sensor Tm is formed by thermocouple, the mensuration of thermocouple is not inserted between upside barrier film 22 and downside barrier film 21, the holding wire of thermocouple and the supply line supplying electric current to heater wire are together inserted in the connecting portion being located at body 25, make can externally transmit mensuration temperature value.

Exemplified with barrier film, the formation of heating plate 710 is set between barrier film with dual morphosis in figure, but in other embodiments of the present utility model, the state of coated heater wire on a barrier film in upside barrier film 21 and downside barrier film 22 can also be configured to.Further, in other embodiments of the present utility model, barrier film can be made up of one deck, instead of double-deck, and in the case, heating plate 710 is arranged with the state being placed in the upper surface of barrier film base plate, or configures heater wire on barrier film base plate.That is, heating plate 710 is not limited to a formation part for barrier film base plate only being configured with the form of closed curve, it comprise be divided into multiple and so that morphogenetic all shapes of heat exchange can be carried out with barrier film base plate.

Below, with reference to Figure 19, the operation principle of the chemical mechanical polishing apparatus rubbing head 201 formed as above is described.

step 1: first, in order to implement chemical-mechanical polishing process wafer W is loaded into the bottom surface of barrier film base plate 21s of rubbing head 201 time, control part 720 applies electric current to the heater wire 716 of heating plate 710, makes barrier film base plate 21s be heated to above normal temperature (S710).Such as, barrier film base plate 21s keeps high temperature as far as possible in the scope not making the pliability raw material of formation barrier film generation distortion, consider material and the chemical-mechanical polishing process parameter such as the kind of slurries, the material of polishing pad of wafer polishing layer, heat with proper temperature (such as, 30 DEG C ~ 180 DEG C).

In the case, " proper temperature " refer to consider wafer polishing layer material, the kind of slurries, the chemical-mechanical polishing process such as the material of polishing pad and service time parameter, both be easy to remove the trickle oxide-film produced after wafer polishing layer contacts with air, the temperature higher than normal temperature (such as, 30 DEG C ~ 180 DEG C) of optimization in wafer polishing of the chemical reaction of slurries can be completed again smoothly.

step 2: then, when the state contacted with polishing pad 11 with the burnishing surface of wafer W starts chemical-mechanical polishing process, receive the heat trnasfer produced by heater wire 716, complete the chemical-mechanical polishing process of wafer W under higher than the temperature conditions of normal temperature.On rubbing head 201 loaded with wafers W state under, even if due to without time enough, make wafer W not reach proper temperature, but implementing the incipient stage heat of chemical-mechanical polishing process from heater wire 716 gradually to wafer W transmission, thus, wafer W reaches proper temperature at short notice.

Thus, the temperature implementing the wafer W periphery of chemical-mechanical polishing process keeps proper temperature close to after proper temperature, and is in the state of the chemical polishing desired reaction temperature reaching slurries.Therefore, wafer polishing face is in the state of temperature higher than peripheral temperature, and can remove the oxide-film on wafer polishing face like a cork, mechanical polishing process also can complete more like a cork.Along with the reaction of slurries completes smoothly, chemical polishing also can stably complete.

Therefore, the polished amount of chemical-mechanical polishing process time per unit from the incipient stage becomes large gradually, and successfully implements chemical-mechanical polishing process.Namely, starting stage (A1 of Fig. 3) in the past accounts for 1/1/3rd ~ bis-of the overall polishing process time, but, by from incipient stage as above and heating wafer with heater wire from loaded with wafers before, the polish temperature environment of wafer is provided, thus, according to cut-off, wafer is placed in the difference of the required time of polishing pad 11, the time difference carrying out heat trnasfer to wafer W can cause deviation, but can low-level starting stage required time T1 be kept to reduce to less than 1/8th of whole polishing time Te the polished amount of wafer time per unit.

step 3: in chemical-mechanical polishing process process, measured and monitor the temperature of barrier film base plate 21s by temperature sensor Tm constantly, the temperature value measured transmits (S720) to control part 720.

On the other hand, in chemical-mechanical polishing process process, the caloric value caused by the friction between incipient stage wafer W and polishing pad 11 is very micro-, but once the polished amount through time per unit keeps the starting stage A1 of low-level state, caloric value will significantly increase.Thus, if the temperature of the heater wire 716 being arranged at barrier film base plate 21s to be remained on the temperature of incipient stage, then the temperature of wafer periphery is caused to become too high.

Therefore, when through overall polishing time Te 1/1/10th ~ tri-(namely, be equivalent to that the incipient stage is no more than overall polishing time 1/3rd) during time, the size of the electric current supplied to heater wire 716 is reduced by control part 720, or control to extend the shut-in time by ON/OFF, be reduced in the caloric value produced in heater wire 716, thus reduce the heat transmitted from heater wire 716 to wafer W.Thus, the peripheral temperature being in the wafer W of chemical-mechanical polishing process completes time point and keeps within the scope of steady temperature all the time from incipient stage to polishing.

On the other hand, rule of thumb, the reduction time point of the heat supplied to heater wire 716 can be defined as the state of 1/1/10th ~ tri-(that is, less than 1/3rd) through overall polishing time Te.Namely, when the mensuration temperature value of barrier film base plate 21s, 22s of transmitting to control part 720 exceedes specified for temperature ranges, control part 720 reduces the electric current applied to heater wire 716, or extend the shut-in time, be reduced by barrier film base plate 21s with this and the amount of heat transfer of the transmission from heater wire 716 to wafer W, reduce the temperature of wafer W.Further, when the mensuration temperature value of barrier film base plate 21s, 22s of transmitting to control part 720 does not reach specified for temperature ranges, control part 720 improves the electric current applied to heater wire 716, or shortens the shut-in time, improves the temperature of wafer W.

Whereby, by reducing the temperature of wafer at time point more accurately, from the polishing process of wafer to end, can be constant and reliably implement chemical-mechanical polishing process.

Step 3 continues to carry out till chemical-mechanical polishing process terminates, and makes chemical-mechanical polishing process can be constant and perform equably within the unit interval.

According to the rubbing head 201 of chemical mechanical polishing apparatus as above, by by being arranged at barrier film base plate 21s, the heater wire 716 of 22s just heats to wafer W transferring heat from before startup chemical-mechanical polishing process, make the temperature of the wafer perimeter in chemical-mechanical polishing process higher than normal temperature, preferably, consider slurries type, the parameters such as the type of polishing layer, wafer is made to keep the specific range of temperatures of 30 DEG C ~ 180 DEG C, wafer polishing layer can be removed more rapidly by machine glazed finish in high temperature environments, further shortening is by the chemical polishing time of the chemical reaction of slurries, thus the low-level starting stage required time T1 of polished amount maintenance significantly shortening time per unit in chemical-mechanical polishing process can be obtained, the effect boosted productivity.And main polishing stage (A2 of Fig. 3) required time can be extended further, therefore, thus the effect that execution controls more accurately can be obtained, make the inclined extent of polished amount reducing to produce along with the position of the burnishing surface of wafer in the main polishing stage.

Below, with reference to Figure 20, the rubbing head 202 of the chemical mechanical polishing apparatus of other embodiments of the present utility model is described in detail.But, in the process be described other embodiments of the present utility model, by omitting the explanation for the structure similar to the structure of previous embodiment, effect, effect, effect, effect, with clear and definite the present embodiment.

The rubbing head 202 of the chemical mechanical polishing apparatus of other embodiments of the present utility model with utilize the difference of the formation of the 4th embodiment of heater wire 716 to be, the gas of injection pressure room C1, C2, C3, C4, C5 is heated or cooled, to regulate the temperature of wafer W.

For this reason, as shown in figure 20, the gas (comprising air) being undertaken heating or cooling by gas temperature adjusting portion 830 is supplied to air pressure supply unit 810, by air pressure supply unit 810 through air pressure supply pipe 715 to each balancing gate pit C1, C2, C3, C4, C5 supply through thermoregulator gas, make each cavity C 1 ... middle formation air pressure.

Thus, starting the incipient stage of chemical-mechanical polishing process, the gas heated by gas temperature adjusting portion 830 to each balancing gate pit C1, C2, C3, C4, C5 supply, carrys out heated chip W by barrier film base plate by air pressure supply unit 810.

But, the rubbing head 202 of other embodiments can only after loaded with wafers W and wafer W contact with polishing pad 11 after could through thermoregulator gas to balancing gate pit C1 ..., C5 supply, therefore, compared to the 4th embodiment, could terminate the starting stage (A1 of Fig. 3) after the chemical-mechanical polishing process of longer time, the efficiency completing chemical-mechanical polishing process aspect is at short notice slightly inferior.And, due to the characteristic of gas itself, compared to heater wire, the temperature of itself not easily changes, in chemical-mechanical polishing process process can only first by flow into balancing gate pit C1, C2 ..., C5 gas extract out, could to balancing gate pit supply through other gases thermoregulator, therefore, balancing gate pit C1, C2 ..., C5 temperature regulate become thorny.

On the other hand, the rubbing head 202 of other embodiments is also provided with for measure balancing gate pit C1 ..., C5 the temperature sensor Tm of temperature, control part 820 is controlled, make the temperature value measured by temperature sensor Tm remain on specified for temperature ranges, and then the temperature of wafer W is remained in specified for temperature ranges.

Below, with reference to Figure 21, the operation principle of the chemical mechanical polishing apparatus rubbing head 202 of other embodiments formed as mentioned above is described.

step 1: the bottom surface in order to implement chemical-mechanical polishing process, wafer W being loaded into the barrier film base plate 21s of rubbing head 201, the burnishing surface of loaded wafer W is contacted with polishing pad, in gas temperature adjusting portion 830 with the temperature of more than 40 DEG C by the gas of state that heats from air pressure supply unit 810 to balancing gate pit C1, C2 ..., C5 supplies (S810).

Now, the temperature of gas is considered material and the chemical-mechanical polishing process parameter such as the kind of slurries, the material of polishing pad of wafer polishing layer to be heated to proper temperature (such as, 30 DEG C ~ 180 DEG C).

step 2: then, when the state contacted with polishing pad 11 with the burnishing surface of wafer W starts chemical-mechanical polishing process, by the incipient stage by the gas that heats to wafer W transferring heat, and by wafer W and polishing pad 11 friction and produce heat.Thus, the mode that the heat produced compared to the friction only by wafer W and polishing pad 11 heats wafer W, can reach proper temperature within the shorter time.

When chemical-mechanical polishing process reaches proper temperature after starting, the implementation phase that chemical polishing operation and mechanical polishing process entering positive, the polished amount of time per unit keeps the low-level starting stage (A1 of Fig. 3) to terminate.

Then, enter the main polishing stage (A2 of Fig. 3), the polished amount of chemical-mechanical polishing process time per unit from the incipient stage becomes large gradually, and successfully implements chemical-mechanical polishing process.Namely, starting stage (A1 of Fig. 3) in the past accounts for 1/1/3rd ~ bis-of the overall polishing process time, but, by will the incipient stage as above through thermoregulator gas to balancing gate pit C1, C2 ..., C5 supply, make to make wafer reach proper temperature within the shorter time, can low-level starting stage required time T1 be kept to reduce to less than 1/4th of overall polishing time Te the polished amount of wafer time per unit.

step 3: in chemical-mechanical polishing process process, by temperature sensor Tm constantly to balancing gate pit C1, C2 ..., C5 temperature carry out measuring and monitoring, the temperature value measured transmits (S720) to control part 720.

On the other hand, in chemical-mechanical polishing process process, caloric value caused by friction between incipient stage wafer W and polishing pad 11 is very micro-, but keeps once the polished amount through time per unit that the starting stage A1 of low-level state is laggard becomes owner of polishing stage A2, and caloric value will significantly increase.Thus, if will by air pressure supply unit 810 to balancing gate pit C1, C2 ... the temperature of the gas of supply remains on the temperature of incipient stage, then cause the temperature of wafer periphery to become too high.

Therefore, when through overall polishing time Te 1/1/6th ~ tri-(namely, be equivalent to that the incipient stage is no more than overall polishing time 1/3rd) during time, or, heating caused by the friction between wafer and polishing pad and cause the temperature of the balancing gate pit measured by temperature sensor Tm too high, reduces the temperature of the gas supplied by gas temperature adjusting portion 830 by control part 820.Thus, for the peripheral temperature of the wafer W in chemical-mechanical polishing process, the heating produced by the friction with polishing pad 11 and by balancing gate pit C1 ... the amount of heat transfer reduced transmitted keeps poised state, and chemically the incipient stage of mechanical polishing process completes time point to polishing and can keep in constant range all the time.

At the rubbing head 201 of the chemical mechanical polishing apparatus of the present utility model formed as mentioned above, in 202, rubbing head is provided with for the thermostat unit heated wafer or cool, wafer implements chemical-mechanical polishing process be adjusted to the state higher than the temperature of normal temperature immediately after being loaded into rubbing head under, the film being covered in wafer polishing layer can be removed more rapidly, the chemical polishing time needed for chemical reaction of slurries can be shortened further, thus, the effect that the polished amount that can shorten time per unit keeps low-level starting stage required time can be obtained.

Thus, the utility model can shorten the chemical-mechanical polishing process required overall time, boosts productivity, can also provide the environment that the polished amount deviation being convenient to the wafer polishing face that controls diminishes.

Above, carried out exemplary illustration to the utility model preferred embodiment, but protection domain of the present utility model is not limited to above-mentioned specific embodiment, those skilled in the art rationally can change in the scope described in protection domain of the present utility model.

Claims

1. a chemical mechanical polishing apparatus, for carrying out polishing to the polishing layer of wafer, is characterized in that, comprise:

Polishing plate, rotates in the mode contacted with the burnishing surface of above-mentioned wafer, to carry out polishing to above-mentioned burnishing surface;

Slurries supply unit, is carrying out supplying slurries in the operation of polishing in the mode contacted with above-mentioned polishing plate to above-mentioned wafer; And

Thermostat unit, before above-mentioned polishing plate supply wafer, heats above-mentioned wafer.

2. chemical mechanical polishing apparatus according to claim 1, is characterized in that,

Be provided with at said temperature regulon and shelve plate, above-mentioned temperature of shelving plate is higher than normal temperature, before chemical-mechanical polishing process is implemented to above-mentioned wafer, the above-mentioned burnishing surface of above-mentioned wafer is contacted with above-mentioned plate of shelving, thus makes the temperature of the above-mentioned burnishing surface of above-mentioned wafer higher than normal temperature.

3. chemical mechanical polishing apparatus according to claim 2, is characterized in that,

Above-mentioned temperature of shelving plate is 35 DEG C ~ 200 DEG C.

4. chemical mechanical polishing apparatus according to claim 1, is characterized in that,

Said temperature regulon comprises:

Chamber, for keeping in order to carry out the wafer that chemical-mechanical polishing process supplies to above-mentioned polishing plate; And

Temperature regulation section, makes the temperature of above-mentioned chamber remain on higher than normal temperature.

5. chemical mechanical polishing apparatus according to claim 4, is characterized in that,

Said temperature adjusting portion comprises:

Temperature sensor, for measuring the temperature of above-mentioned chamber interior; And

Warm-air supply portion, when the mensuration temperature measured by said temperature sensor is lower than assigned temperature, the inside to above-mentioned chamber is injected by the air heated.

6. chemical mechanical polishing apparatus according to claim 4, is characterized in that,

Said temperature adjusting portion comprises:

Shelve plate, for shelving the wafer before supplying to above-mentioned polishing plate;

Temperature sensor, for measuring above-mentioned temperature of shelving plate; And

Heater wire, when the mensuration temperature measured by said temperature sensor is lower than assigned temperature, heats above-mentioned plate of shelving.

7. chemical mechanical polishing apparatus according to claim 1, is characterized in that,

Said temperature regulon comprises:

Pure water supply unit, for the pure water of wafer supplying temperature higher than normal temperature, above-mentioned wafer is the wafer supplied to above-mentioned polishing plate to carry out chemical-mechanical polishing process.

8. chemical mechanical polishing apparatus according to claim 7, is characterized in that,

Above-mentioned pure water supply unit comprises tank, for being soaked in pure water by above-mentioned wafer.

9. chemical mechanical polishing apparatus according to claim 8, is characterized in that,

Above-mentioned pure water supply unit is, the above-mentioned burnishing surface to above-mentioned wafer sprays the pure water injection portion of pure water.

10. the chemical mechanical polishing apparatus according to any one in claim 7 to 9, is characterized in that,

The temperature of above-mentioned pure water is 35 DEG C ~ 100 DEG C.

11. 1 kinds of chemical mechanical polishing apparatus, for carrying out polishing to the polishing layer of wafer, is characterized in that, comprise:

Polishing plate, rotates in the mode contacted with the burnishing surface of above-mentioned wafer, to carry out polishing to above-mentioned burnishing surface; And

Slurries supply unit, carry out in the operation of polishing at above-mentioned wafer in the mode contacted with above-mentioned polishing plate, in the process at least partially of chemical-mechanical polishing process, be adjusted to the slurries higher than normal temperature at least one supplying temperature in above-mentioned wafer and above-mentioned polishing plate.

12. chemical mechanical polishing apparatus according to claim 11, is characterized in that,

In the incipient stage of the chemical-mechanical polishing process of above-mentioned wafer, above-mentioned slurries supply unit is adjusted to as supplying slurries higher than after the temperature of normal temperature.

13. chemical mechanical polishing apparatus according to claim 12, is characterized in that,

The required time of above-mentioned incipient stage is for performing full-time less than 1/3rd needed for above-mentioned chemical-mechanical polishing process.

14. chemical mechanical polishing apparatus according to claim 12, is characterized in that,

In the incipient stage of the chemical-mechanical polishing process of above-mentioned wafer, the temperature of the slurries supplied by above-mentioned slurries supply unit is more than 40 DEG C.

15. chemical mechanical polishing apparatus according to claim 12, is characterized in that,

When performing the chemical-mechanical polishing process of above-mentioned wafer, above-mentioned slurries supply unit is adjusted to as supplying slurries lower than after the temperature of incipient stage.

16., according to claim 11 to the chemical mechanical polishing apparatus described in any one in 15, is characterized in that, also comprise:

Temperature sensor, for measuring the surface temperature of above-mentioned polishing plate;

Above-mentioned slurries supply unit regulates the temperature of the slurries from above-mentioned slurries supply unit supply, and the temperature measured by said temperature sensor is remained in specified for temperature ranges.

17. chemical mechanical polishing apparatus according to claim 16, is characterized in that,

Above-mentioned specified for temperature ranges is higher than normal temperature.

18., according to claim 11 to the chemical mechanical polishing apparatus described in any one in 15, is characterized in that,

Before the above-mentioned chemical-mechanical polishing process of execution, the pure water more than above-mentioned polishing plate supply normal temperature.

19. chemical mechanical polishing apparatus according to claim 18, is characterized in that,

Above-mentioned pure water is sprayed on surface to above-mentioned polishing plate.

20. chemical mechanical polishing apparatus according to claim 18, is characterized in that,

The temperature of above-mentioned pure water is 50 DEG C ~ 100 DEG C.

21. 1 kinds of chemical mechanical polishing apparatus, for carrying out polishing to the polishing layer of wafer, is characterized in that, comprise:

Polishing plate, is coated with polishing pad, and above-mentioned polishing pad rotates in the mode contacted with the burnishing surface of above-mentioned wafer, to carry out polishing to above-mentioned burnishing surface; And

Temperature regulation section, for regulating the temperature of above-mentioned polishing pad.

22. chemical mechanical polishing apparatus according to claim 21, is characterized in that,

In the incipient stage of the chemical-mechanical polishing process of above-mentioned wafer, above-mentioned polishing pad is adjusted to as the temperature higher than normal temperature.

23. chemical mechanical polishing apparatus according to claim 22, is characterized in that, the required time of above-mentioned incipient stage is for performing full-time less than 1/3rd needed for above-mentioned chemical-mechanical polishing process.

24. chemical mechanical polishing apparatus according to claim 22, is characterized in that,

In the incipient stage of the chemical-mechanical polishing process of above-mentioned wafer, the temperature of the above-mentioned polishing pad of above-mentioned polishing plate is more than 40 DEG C.

25. chemical mechanical polishing apparatus according to claim 22, is characterized in that,

Before above-mentioned chemical-mechanical polishing process starts, said temperature adjusting portion is to the pure water of above-mentioned polishing pad supplying temperature higher than normal temperature.

26. chemical mechanical polishing apparatus according to claim 22, is characterized in that,

Said temperature adjusting portion irradiates adjustable radiant heat from the position that above-mentioned polishing pad separates.

27. chemical mechanical polishing apparatus according to claim 22, is characterized in that,

Said temperature adjusting portion is located at the heater wire of above-mentioned polishing pad in being.

28. chemical mechanical polishing apparatus according to claim 27, is characterized in that,

The caloric value of above-mentioned heater wire is adjustable.

29. chemical mechanical polishing apparatus according to any one in claim 21 to 28, is characterized in that, also comprise:

Temperature sensor, for measuring the temperature of above-mentioned polishing pad.

30. chemical mechanical polishing apparatus according to claim 29, is characterized in that,

In above-mentioned chemical-mechanical polishing process, the temperature of above-mentioned polishing pad is adjusted to the temperature range of more than 40 DEG C.

The rubbing head of 31. 1 kinds of chemical mechanical polishing apparatus, above-mentioned rubbing head presses above-mentioned wafer to perform chemical-mechanical polishing process to polishing pad under the state making wafer be positioned at downside, it is characterized in that, comprising:

Body, is driven in rotation in above-mentioned chemical-mechanical polishing process;

Barrier film, combines with above-mentioned body and together rotates with above-mentioned body, and between above-mentioned body mineralization pressure room, be formed with the base plate for locating above-mentioned wafer in bottom surface; And

Thermostat unit, for regulating the temperature of the wafer being positioned at above-mentioned base plate bottom surface.

The rubbing head of 32. chemical mechanical polishing apparatus according to claim 31, is characterized in that,

Said temperature regulon is by putting on the caloric value of electric current of heater wire to regulate the temperature of above-mentioned wafer, and above-mentioned heater wire is arranged at the above-mentioned base plate of above-mentioned barrier film.

The rubbing head of 33. chemical mechanical polishing apparatus according to claim 32, is characterized in that,

Above-mentioned heater wire is adjusted to as higher than normal temperature in the incipient stage of chemical-mechanical polishing process, thus performs chemical-mechanical polishing process the temperature of above-mentioned wafer being adjusted under the state higher than normal temperature.

The rubbing head of 34. chemical mechanical polishing apparatus according to claim 33, is characterized in that,

The required time of above-mentioned incipient stage is less than 1/3rd of the activity time of the whole chemical-mechanical polishing process to above-mentioned wafer.

The rubbing head of 35. chemical mechanical polishing apparatus according to claim 33, is characterized in that,

The above-mentioned base plate of above-mentioned barrier film comprises the region being formed as bilayer, and above-mentioned heater wire is between the above-mentioned base plate of bilayer.

The rubbing head of 36. chemical mechanical polishing apparatus according to claim 35, is characterized in that,

The heating plate that the panel of flexible materials is provided with above-mentioned heater wire is configured between double-deck above-mentioned base plate.

The rubbing head of 37. chemical mechanical polishing apparatus according to claim 35, is characterized in that,

After the above-mentioned incipient stage completing above-mentioned chemical-mechanical polishing process, the caloric value produced by above-mentioned heater wire reduces.

The rubbing head of 38. chemical mechanical polishing apparatus according to claim 35, is characterized in that, also comprise:

Temperature sensor, for measuring the temperature of the above-mentioned base plate of above-mentioned barrier film;

Said temperature regulon regulates in the mode making the measured value of said temperature sensor and remain in specified for temperature ranges.

The rubbing head of 39. chemical mechanical polishing apparatus according to claim 31, is characterized in that,

Said temperature regulon regulates the temperature of the gas supplied to above-mentioned balancing gate pit.

40., according to the rubbing head of chemical mechanical polishing apparatus according to claim 39, is characterized in that,

In the incipient stage of chemical-mechanical polishing process, said temperature regulon is to the gas of above-mentioned balancing gate pit supplying temperature higher than normal temperature.

The rubbing head of 41. chemical mechanical polishing apparatus according to claim 40, is characterized in that,

42., according to the rubbing head of chemical mechanical polishing apparatus according to claim 38, is characterized in that,

After the above-mentioned incipient stage completing above-mentioned chemical-mechanical polishing process, to the gas of above-mentioned balancing gate pit's supply lower temperature.

43., according to the rubbing head of chemical mechanical polishing apparatus according to claim 38, is characterized in that, also comprise:

Temperature sensor, for measuring the temperature of the gas supplied to above-mentioned balancing gate pit;

The rubbing head of 44. chemical mechanical polishing apparatus according to any one in claim 31 to 43, is characterized in that,

Above-mentioned wafer-load is after the above-mentioned base plate of above-mentioned rubbing head, and above-mentioned wafer is heated by said temperature regulon at once.