TW202247945A

TW202247945A - Temperature controlled rate of removal in cmp

Info

Publication number: TW202247945A
Application number: TW111107019A
Authority: TW
Inventors: 伊卡特瑞納Ａ米克海琳全柯; 克里斯多佛宏鈞李; 安南Ｎ伊爾; 修洋川; 派翠克Ａ希賈許
Original assignee: 美商應用材料股份有限公司
Priority date: 2021-03-03
Filing date: 2022-02-25
Publication date: 2022-12-16
Also published as: US20220281061A1; JP2024509159A; CN117279741A; WO2022187023A1; KR20230152727A; US20220281070A1

Abstract

A method for removing material from a substrate includes dispensing an abrasive slurry on a polishing pad, storing an indication of a relative charge on the abrasive agent, contacting a surface of a substrate to the polishing pad in the presence of the slurry, generating relative motion between the substrate and the polishing pad, measuring a removal rate for the substrate, comparing a the measured removal rate to a target removal rate and determining whether to increase or decrease the removal rate based on the comparison, determining whether to increase or decrease a temperature of an interface between the polishing pad and the substrate based on the indication of the relative charge of the abrasive agent and on whether to increase or decrease the removal rate, and controlling a temperature of the interface as determined to modify the removal rate.

Description

CMP中的溫度控制的移除速率Temperature-controlled removal rate in CMP

本說明書關於使用氧化鈰（cerium oxide）漿料的化學機械拋光（chemical mechanical polishing）應用。This specification is about chemical mechanical polishing applications using cerium oxide slurries.

積體電路一般是藉由依序沉積導電層、半導體層或絕緣層而形成在矽晶圓上。一個製造步驟涉及在非平面表面上面沉積層並且平坦化該層。對於某些應用而言，該層受到平坦化，直到暴露出圖案化下層（underlayer）的頂表面為止。對於其他應用而言，該層受到平坦化，直到在下方的層上面留下預定的厚度為止。Integrated circuits are generally formed on silicon wafers by sequentially depositing conductive layers, semiconductor layers, or insulating layers. One fabrication step involves depositing a layer over the non-planar surface and planarizing the layer. For some applications, this layer is planarized until the top surface of the patterned underlayer is exposed. For other applications, the layer is planarized until a predetermined thickness is left above the underlying layer.

化學機械拋光（CMP）是一種受到認可的平坦化方法。此平坦化方法將基板安裝在承載頭上，並且基板的表面放置成抵靠旋轉拋光墊的表面。將拋光液（例如研磨漿料（abrasive slurry））配發到旋轉的拋光墊上，藉由透過機械和化學手段拋光基板上的層。漿料中的研磨顆粒（abrasive particle）能夠是氧化矽和氧化鈰。Chemical Mechanical Polishing (CMP) is a recognized planarization method. This planarization method mounts the substrate on a carrier head with the surface of the substrate placed against the surface of a rotating polishing pad. Dispensing a polishing liquid (such as abrasive slurry) onto a rotating polishing pad to polish the layers on the substrate by mechanical and chemical means. The abrasive particles in the slurry can be silicon oxide and cerium oxide.

在一個態樣中，一種拋光（polishing）之方法，包括：將拋光漿料配發至拋光墊上，該拋光漿料含有帶負電的二氧化鈰（ceria）氧化物；在該漿料的存在下，使基板之表面接觸該拋光墊；產生該基板與該拋光墊之間的相對運動，以拋光該基板之該表面；於該基板的一移除速率下進行測量；決定所測量的該移除速率少於目標移除速率；及回應所測量的該移除速率少於該目標移除速率之該決定，減少該拋光墊與該基板之間的界面的溫度。In one aspect, a method of polishing includes: dispensing a polishing slurry onto a polishing pad, the polishing slurry containing negatively charged ceria oxide; in the presence of the slurry , bringing the surface of the substrate into contact with the polishing pad; generating relative motion between the substrate and the polishing pad to polish the surface of the substrate; measuring at a removal rate of the substrate; determining the measured removal the rate is less than the target removal rate; and in response to the determination that the measured removal rate is less than the target removal rate, reducing the temperature of the interface between the polishing pad and the substrate.

在另一態樣中，一種拋光之方法包括：將拋光漿料配發至拋光墊上，該拋光漿料含有帶負電的二氧化鈰氧化物；在該漿料的存在下，使基板之表面接觸該拋光墊；產生該基板與該拋光墊之間的相對運動，以拋光該基板之該表面；測量該基板的移除速率；決定所測量的該移除速率大於目標移除速率；及回應所測量的該移除速率大於該目標移除速率之該決定，增加該拋光墊與該基板之間的界面的溫度。該研磨劑可包括氧化鈰顆粒。In another aspect, a method of polishing includes: dispensing a polishing slurry onto a polishing pad, the polishing slurry containing negatively charged ceria oxide; and contacting a surface of a substrate in the presence of the slurry the polishing pad; generating relative motion between the substrate and the polishing pad to polish the surface of the substrate; measuring a removal rate of the substrate; determining that the measured removal rate is greater than a target removal rate; and responding to the The determination that the measured removal rate is greater than the target removal rate increases the temperature of the interface between the polishing pad and the substrate. The abrasive may include cerium oxide particles.

在另一態樣中，一種用於從基板移除材料之方法包括：將漿料配發到拋光墊之表面上，其中該漿料包括承載液體與研磨劑；儲存在該研磨劑上的相關電荷的指令；在該漿料的存在下將基板之表面接觸該拋光墊；產生該基板與該拋光墊之間的相對運動，以拋光該基板之該表面；測量該基板的移除速率；將測量的該移除速率與目標移除速率進行比較，且根據該比較，決定是否增加或減少該移除速率；根據該研磨劑的該相關電荷的該指令以及根據是否增加或減少該移除速率，而決定是否增加或減少該拋光墊與該基板之間的界面的溫度；以及控制所決定的該界面的溫度，以修改該移除速率。In another aspect, a method for removing material from a substrate includes: dispensing a slurry onto a surface of a polishing pad, wherein the slurry includes a carrier liquid and an abrasive; an associated abrasive stored on the abrasive Instructions for charging; contacting the surface of the substrate to the polishing pad in the presence of the slurry; generating relative motion between the substrate and the polishing pad to polish the surface of the substrate; measuring the removal rate of the substrate; comparing the measured removal rate with a target removal rate, and based on the comparison, deciding whether to increase or decrease the removal rate; based on the instruction of the relative charge of the abrasive and based on whether to increase or decrease the removal rate , and determine whether to increase or decrease the temperature of the interface between the polishing pad and the substrate; and control the determined temperature of the interface to modify the removal rate.

在另一態樣中，一種拋光之方法包括：透過將拋光漿料配發至拋光墊上，拋光在基板上的層，在該漿料的存在下使該基板上的該層的表面接觸該拋光墊，並且產生在該基板與該拋光墊之間的相對運動；對於該層的拋光的初始部分，將該拋光的溫度控制在第一溫度範圍內；獲得溫度轉變時間，該溫度轉變時間在終點時間之前；一旦決定到達該溫度轉變時間，則將該拋光的該溫度降低至較低的第二溫度範圍，該較低的第二溫度範圍低於該第一溫度範圍；以及對於相同的該層的拋光的後續部分，將該拋光的溫度控制在該第二溫度範圍內，直到該估算的終點時間為止。In another aspect, a method of polishing includes polishing a layer on a substrate by dispensing a polishing slurry onto a polishing pad, contacting a surface of the layer on the substrate with the polishing pad in the presence of the slurry. Pad, and generate relative motion between the substrate and the polishing pad; for an initial portion of polishing of the layer, controlling the temperature of the polishing within a first temperature range; obtaining a temperature transition time, the temperature transition time at the end Before the time; once it is determined that the temperature transition time is reached, the temperature of the polishing is lowered to a lower second temperature range, which is lower than the first temperature range; and for the same layer In the subsequent part of the polishing, the temperature of the polishing is controlled within the second temperature range until the estimated end time.

在另一態樣中，一種拋光之方法包括：透過將拋光漿料配發至拋光墊上，拋光在基板上的層，在該漿料的存在下使該基板上的該層的表面接觸該拋光墊，並且產生在該基板與該拋光墊之間的相對運動；對於該層的拋光的初始部分，將該拋光的溫度控制在第一溫度範圍內；決定溫度轉變時間，該溫度轉變時間在終點時間之前；一旦決定到達該溫度轉變時間，則增加在該基板上的壓力，同時增加冷卻劑流量以持續將該拋光的該溫度維持於該第一溫度範圍內；以及對於相同的該層的拋光的後續部分，維持該增加的壓力且將該拋光的溫度控制在該第一溫度範圍內，直到該估算的終點時間為止。In another aspect, a method of polishing includes polishing a layer on a substrate by dispensing a polishing slurry onto a polishing pad, contacting a surface of the layer on the substrate with the polishing pad in the presence of the slurry. Pad, and generate relative motion between the substrate and the polishing pad; for the initial portion of polishing of the layer, controlling the temperature of the polishing within a first temperature range; determining the temperature transition time, the temperature transition time at the end Before the time; once it is determined to reach the temperature transition time, then increase the pressure on the substrate while increasing the coolant flow to continuously maintain the temperature of the polishing in the first temperature range; and for the polishing of the same layer and maintaining the increased pressure and controlling the polishing temperature within the first temperature range until the estimated endpoint time.

實施方式可包括下述特徵之一或多者。配發該冷卻劑流體可包括透過收斂擴張（convergent-divergent）噴嘴噴灑（spray）冷卻劑流體。測量該移除速率可包括以原位光學監視系統在拋光期間監視基板。該基板之該表面可以包括氧化物層，例如氧化矽。控制該界面之該溫度可包括：如果指令為帶正電，則透過增加溫度而增加拋光速率；如果指令為帶負電，則透過減少溫度而減少拋光速率；如果指令為帶正電，則透過減少溫度而減少拋光速率，或如果指令為帶負電，則透過增加溫度而減少拋光速率。Implementations may include one or more of the following features. Dispensing the coolant fluid may include spraying the coolant fluid through a convergent-divergent nozzle. Measuring the removal rate can include monitoring the substrate during polishing with an in-situ optical monitoring system. The surface of the substrate may include an oxide layer, such as silicon oxide. Controlling the temperature of the interface may include: increasing the polishing rate by increasing the temperature if commanded to be positively charged; decreasing the polishing rate by decreasing the temperature if commanded to be negatively charged; Decrease the polishing rate by increasing the temperature, or by increasing the temperature if the command is negatively charged.

優點能夠包括（但不限於）以下一或多項。CMP系統能夠達成高拋光速率，以滿足客戶的生產需求。本文所述的方法藉由減少拋光每一基板所需的時間而進一步改善系統的產量。這導致基板輸出增加以及每一基板的耗材成本降低。CMP製程溫度的最適化與帶電荷的二氧化鈰應用相結合也容許增加拋光墊的使用壽命，從而降低客戶的成本。Advantages can include, but are not limited to, one or more of the following. The CMP system is capable of achieving high polishing rates to meet the production needs of customers. The methods described herein further improve the throughput of the system by reducing the time required to polish each substrate. This results in increased substrate output and reduced consumable costs per substrate. The optimization of the CMP process temperature combined with the application of charged ceria also allows to increase the service life of the polishing pad, thereby reducing the cost for the customer.

在所附的圖式和下文的敘述中提出一或多個實施例的細節。由該敘述、該等圖式及該等請求項可明瞭其他特徵、態樣及優點。The details of one or more implementations are set forth in the accompanying drawings and the description below. Other features, aspects, and advantages are apparent from the description, the drawings, and the claims.

CMP製程的材料移除速率取決於拋光流體的磨料和其他成分的選擇、施加至基板的壓力、拋光墊和基板之間的相對速率、以及基板和拋光墊之間的界面處的溫度。在習知上，化學反應製程（例如拋光製程）隨著溫度增加。因此，增加溫度能夠是增加移除速率的一種技術。The material removal rate of a CMP process depends on the choice of abrasive and other components of the polishing fluid, the pressure applied to the substrate, the relative velocity between the polishing pad and the substrate, and the temperature at the interface between the substrate and the polishing pad. Conventionally, chemical reaction processes (such as polishing processes) increase with temperature. Therefore, increasing the temperature can be one technique to increase the removal rate.

但是，拋光速率對溫度的實際相依性能夠是溫度對拋光墊的影響（例如拋光墊的彈性模量）以及由溫度驅動的反應速率之間的更複雜的交互作用。再者，對於某些拋光製程而言，研磨顆粒的靜電電位（electrostatic potential）是此交互作用的一分子。However, the actual dependence of polishing rate on temperature can be a more complex interaction between the effect of temperature on the polishing pad (eg, the modulus of elasticity of the polishing pad) and the reaction rate driven by temperature. Furthermore, for some polishing processes, the electrostatic potential of the abrasive particles is part of the interaction.

氧化鈰（例如，二氧化鈰）是用於一些拋光製程的拋光液中的研磨材料。在拋光液中，研磨二氧化鈰顆粒之表面能夠有正靜電電位、負靜電電位、或在研磨顆粒之表面上可忽略的靜電電位。此電位可能取決於合成技術。使用具有二氧化鈰顆粒的拋光液的拋光製程顯現出一拋光速率，該拋光速率取決於漿料中顆粒之表面的正電位或負電位而對溫度有不同的回應。Cerium oxide (eg, ceria) is an abrasive material in polishing fluids used in some polishing processes. In the polishing fluid, the surface of the abrasive ceria particles can have a positive electrostatic potential, a negative electrostatic potential, or a negligible electrostatic potential on the surface of the abrasive particle. This potential may depend on the synthesis technique. Polishing processes using polishing fluids with ceria particles exhibit a polishing rate that responds differently to temperature depending on the positive or negative potential of the surface of the particles in the slurry.

此申請案描述根據研磨顆粒的電荷性質執行溫度控制的技術。CMP系統包括加熱器或冷卻器，以控制基板和拋光墊之界面處的溫度。透過改變拋光製程的溫度，材料移除速率取決於懸浮在漿料中的二氧化鈰之表面電荷而增加或減少。對於帶負電的二氧化鈰漿料而言，冷卻能夠增加拋光速率並改善地形（topography）。不受任何特定理論所限制，使用帶負電的二氧化鈰的冷卻能夠透過增加硬度及修改墊之頂表面的凹凸（asperity）結構而改善材料移除速率。對於一些帶正電的二氧化鈰漿料而言，加熱和冷卻的組合能夠透過在拋光製程開始時加熱且在靠近拋光終點時冷卻以改善地形，而改善拋光速率。對於其他帶正電的二氧化鈰漿料而言，使用冷卻和增加的壓力之組合改善拋光速率；增加的壓力會增加拋光速率，且冷卻防止墊過熱並且維持地形。This application describes techniques for performing temperature control based on the charge properties of abrasive particles. CMP systems include heaters or coolers to control the temperature at the interface of the substrate and polishing pad. By changing the temperature of the polishing process, the material removal rate is increased or decreased depending on the surface charge of the ceria suspended in the slurry. For negatively charged ceria slurries, cooling increases polishing rate and improves topography. Without being bound by any particular theory, cooling using negatively charged ceria can improve material removal rates by increasing hardness and modifying the asperity structure of the top surface of the pad. For some positively charged ceria slurries, the combination of heating and cooling can improve the polishing rate by heating at the beginning of the polishing process and cooling near the end of the polishing process to improve topography. For other positively charged ceria slurries, the polishing rate was improved using a combination of cooling and increased pressure; increased pressure increased the polishing rate, and cooling prevented pad overheating and maintained topography.

圖1繪示拋光系統20的範例。拋光系統20能夠包括可旋轉的碟形平台22，拋光墊30座落於該碟形平台22上。平台可操作以繞軸線23旋轉。例如，馬達24能夠轉動驅動軸桿26以旋轉平台22。拋光墊30能夠以可拆卸式固定於平台22，例如藉由黏結劑層。拋光墊30能夠是兩層的拋光墊，具外拋光層32和較軟的背襯層34。FIG. 1 illustrates an example of a polishing system 20 . Polishing system 20 can include a rotatable dish-shaped platform 22 on which polishing pad 30 is seated. The platform is operable to rotate about axis 23 . For example, motor 24 can rotate drive shaft 26 to rotate platform 22 . The polishing pad 30 can be detachably fixed to the platform 22, such as by an adhesive layer. The polishing pad 30 can be a two-layer polishing pad having an outer polishing layer 32 and a softer backing layer 34 .

拋光系統20能夠包括拋光液供應通口40，以將拋光液42（例如研磨漿料）配發至拋光墊30上。拋光系統20也能夠包括拋光墊調節器，以研磨拋光墊30而將拋光墊30維持在一致的研磨狀態。The polishing system 20 can include a polishing fluid supply port 40 to dispense a polishing fluid 42 (eg, abrasive slurry) onto the polishing pad 30 . Polishing system 20 can also include a polishing pad conditioner to abrade polishing pad 30 to maintain polishing pad 30 in a consistent abrasive state.

承載頭50可操作以撐托（hold）基板10抵靠拋光墊30。每一承載頭50也包括複數個可獨立控制的加壓腔室，例如三個腔室52a-52c，該加壓腔室能夠將可獨立控制的壓力施加到基板10上的相關聯區塊。腔室52a-52c能夠由可撓隔膜（flexible membrane）54所界定，該可撓隔膜54具有底表面，而基板10安裝至該底表面。承載頭50也能夠包括保持環56以將基板10保持在可撓隔膜54下方。雖然為了便於說明而在圖1和圖2中僅繪示三個腔室，但能夠有兩個腔室，或者四個或更多個腔室，例如五個腔室。此外，能夠在承載頭50中使用其他機構以調整施加到基板的壓力，該其他機構例如為壓電致動器。The carrier head 50 is operable to hold the substrate 10 against the polishing pad 30 . Each carrier head 50 also includes a plurality of independently controllable pressurization chambers, such as three chambers 52 a - 52 c , capable of applying independently controllable pressures to associated regions on the substrate 10 . The chambers 52a-52c can be bounded by a flexible membrane 54 having a bottom surface to which the substrate 10 is mounted. The carrier head 50 can also include a retaining ring 56 to retain the substrate 10 below the flexible membrane 54 . Although only three chambers are shown in Figures 1 and 2 for ease of illustration, there can be two chambers, or four or more chambers, eg five chambers. Furthermore, other mechanisms can be used in the carrier head 50 to adjust the pressure applied to the substrate, such as piezoelectric actuators.

每一承載頭50從支撐結構60（例如旋轉料架或軌道）懸掛，並且由驅動軸桿62連接至承載頭旋轉馬達64，使得承載頭能夠繞軸線51旋轉。視情況任選，每一承載頭50能夠例如在旋轉料架上的滑動件上側向振盪，其藉由沿著軌道的運動；或是藉由旋轉料架本身的旋轉振盪。在操作中，平台22繞該平台22的中心軸線23旋轉，並且承載頭50繞該承載頭50的中心軸線51旋轉且側向平移跨越拋光墊30的頂表面。Each carrier head 50 is suspended from a support structure 60 , such as a carousel or track, and is connected by a drive shaft 62 to a carrier head rotation motor 64 enabling rotation of the carrier head about axis 51 . Optionally, each carrier head 50 can oscillate laterally, for example on a slide on a carousel, by movement along a track; or by rotational oscillation of the carousel itself. In operation, the platform 22 rotates about the central axis 23 of the platform 22 and the carrier head 50 rotates about the central axis 51 of the carrier head 50 and translates laterally across the top surface of the polishing pad 30 .

拋光系統也包括原位監視系統70，該原位監視系統能夠用於控制拋光參數，例如在腔室52a-52c之一或多者中施加的壓力。原位監視系統70能夠是光學監視系統，例如光譜監視系統，特別是用於基板上的氧化物層的拋光。或者，原位監視系統70可以是渦電流（eddy current）監視系統，特別是用於基板上的金屬層的拋光。The polishing system also includes an in-situ monitoring system 70 that can be used to control polishing parameters, such as the pressure exerted in one or more of the chambers 52a-52c. The in-situ monitoring system 70 can be an optical monitoring system, such as a spectroscopic monitoring system, in particular for polishing of oxide layers on substrates. Alternatively, the in-situ monitoring system 70 may be an eddy current monitoring system, particularly for polishing of metal layers on substrates.

作為光學監視系統，原位監視系統70能夠包括光源72、光偵測器74和電路系統76，該電路系統76用於在控制器90（例如電腦）和光源72與光偵測器74之間發送及接收訊號。一根或多根光纖78能夠用於將來自光源72的光傳輸至拋光墊30中的窗36，並且將從基板10反射的光傳輸到偵測器74。作為光譜儀系統，則光源72能夠操作以發射白光，且偵測器74能夠是光譜儀。測量的光譜可以被轉換成特徵值，該特徵值表示在每個區域中被拋光的層的厚度。As an optical monitoring system, the in-situ monitoring system 70 can include a light source 72, a light detector 74, and circuitry 76 for communication between a controller 90 (such as a computer) and the light source 72 and light detector 74. Send and receive signals. One or more optical fibers 78 can be used to transmit light from light source 72 to window 36 in polishing pad 30 and to transmit light reflected from substrate 10 to detector 74 . As a spectrometer system, the light source 72 can then be operated to emit white light and the detector 74 can be a spectrometer. The measured spectra can be converted into characteristic values representing the thickness of the polished layer in each region.

電路系統76的輸出能夠是數位電子訊號，該數位電子訊號經過驅動軸桿26中的旋轉耦合器28（例如滑環）而至控制器90。或者，電路系統76能夠與控制器90透過無線訊號通訊。控制器90能夠是運算裝置，該運算裝置包括微處理器、記憶體及輸入/輸出電路系統，例如可程式化電腦。雖然是單一方塊繪示，但控制器90能夠是網路化的系統，具分散在多部電腦上的功能。The output of the circuitry 76 can be a digital electronic signal that travels through a rotary coupler 28 (such as a slip ring) in the drive shaft 26 to the controller 90 . Alternatively, circuitry 76 can communicate with controller 90 via wireless signals. The controller 90 can be a computing device including a microprocessor, memory and input/output circuitry, such as a programmable computer. Although shown as a single block, the controller 90 can be a networked system with functions distributed across multiple computers.

拋光系統20包括溫度感測器80，以監視拋光製程的溫度，例如拋光墊30及/或拋光墊上的拋光液42的溫度，或基板的溫度。例如，溫度感測器80能夠是紅外（IR）感測器，例如IR照相機，定位在拋光墊30上方並且配置成測量拋光墊30及/或拋光墊上的拋光液42的溫度。特別是，溫度感測器64能夠配置成測量沿著拋光墊30的半徑上多個點的溫度，而生成徑向溫度分佈曲線（temperature profile）。例如，IR照相機能夠具有跨越拋光墊30的半徑的視場。The polishing system 20 includes a temperature sensor 80 for monitoring the temperature of the polishing process, such as the temperature of the polishing pad 30 and/or the polishing solution 42 on the polishing pad, or the temperature of the substrate. For example, temperature sensor 80 can be an infrared (IR) sensor, such as an IR camera, positioned above polishing pad 30 and configured to measure the temperature of polishing pad 30 and/or polishing solution 42 on the polishing pad. In particular, temperature sensor 64 can be configured to measure the temperature at multiple points along the radius of polishing pad 30 to generate a radial temperature profile. For example, an IR camera can have a field of view that spans the radius of polishing pad 30 .

在一些實施方式中，溫度感測器是接觸式感測器而不是非接觸式感測器。例如，溫度感測器64能夠是位於平台24上或中的熱電偶或IR溫度計。此外，溫度感測器64能夠與拋光墊直接接觸。In some embodiments, the temperature sensor is a contact sensor rather than a non-contact sensor. For example, temperature sensor 64 can be a thermocouple or an IR thermometer located on or in platform 24 . Additionally, the temperature sensor 64 can be in direct contact with the polishing pad.

在一些實施方式中，多個溫度感測器能夠跨越拋光墊30在不同的徑向位置處隔開，以提供沿著拋光墊30的半徑上多點處的溫度。此技術能夠用於替代IR照相機或是除了IR照相機外還使用此技術。In some embodiments, multiple temperature sensors can be spaced at different radial locations across polishing pad 30 to provide temperatures at multiple points along the radius of polishing pad 30 . This technique can be used in place of an IR camera or in addition to an IR camera.

雖然在圖1中繪示溫度感測器64經定位以監視拋光墊30及/或拋光墊30上的拋光液42的溫度，但該溫度感測器64能夠定位在承載頭50內側以測量基板10的溫度。溫度感測器64能夠與基板10的半導體晶圓直接接觸（即，接觸感測器）。在一些實施方式中，在拋光系統20中包括了多個溫度感測器，例如，以測量不同部件的溫度。Although the temperature sensor 64 is shown positioned in FIG. 1 to monitor the temperature of the polishing pad 30 and/or the temperature of the polishing solution 42 on the polishing pad 30, the temperature sensor 64 can be positioned inside the carrier head 50 to measure the temperature of the substrate. 10 temperature. The temperature sensor 64 can be in direct contact with the semiconductor wafer of the substrate 10 (ie, a contact sensor). In some embodiments, multiple temperature sensors are included in the polishing system 20, for example, to measure the temperature of various components.

拋光系統20也包括溫度控制系統100，以控制拋光墊30及/或拋光墊上的拋光液42的溫度。溫度控制系統100包括冷卻系統及/或加熱系統。在一些實施方式中，冷卻系統及/或加熱系統都是透過下述方式操作：將溫度控制的介質（例如液體、蒸氣或噴霧）輸送到拋光墊30的拋光表面36上（或是輸送到已經存在於該拋光墊上的拋光液上）。The polishing system 20 also includes a temperature control system 100 for controlling the temperature of the polishing pad 30 and/or the polishing solution 42 on the polishing pad. The temperature control system 100 includes a cooling system and/or a heating system. In some embodiments, the cooling system and/or the heating system are operated by delivering a temperature-controlled medium (such as a liquid, vapor, or spray) to the polishing surface 36 of the polishing pad 30 (or to the present on the polishing fluid on the pad).

如圖1所示，示範性溫度控制系統100包括臂110，該臂110延伸於平台22和拋光墊30上方。多個噴嘴120從臂110懸掛，並且每一噴嘴120配置成將溫度控制流體噴灑到拋光墊上。臂110能夠由底座112支撐，使得噴嘴120藉由隙縫126隔開拋光墊30。每一噴嘴120能夠配置成例如透過使用控制器12而起始及停止穿過每一噴嘴120的流體流動。每一噴嘴120能夠配置為將噴霧122中的氣溶膠化（aerosolized）的水引導朝向拋光墊30。As shown in FIG. 1 , the exemplary temperature control system 100 includes an arm 110 extending above the platform 22 and the polishing pad 30 . A plurality of nozzles 120 are suspended from the arm 110, and each nozzle 120 is configured to spray a temperature control fluid onto the polishing pad. Arm 110 can be supported by base 112 such that nozzle 120 is separated from polishing pad 30 by slot 126 . Each nozzle 120 can be configured to start and stop fluid flow through each nozzle 120 , for example, through use of controller 12 . Each nozzle 120 can be configured to direct aerosolized water in spray 122 toward polishing pad 30 .

為了以冷卻系統操作，溫度控制流體是冷卻劑。冷卻劑是氣體（例如空氣）或液體（例如水）。冷卻劑能夠處於室溫或冷激（chill）至低於室溫，例如，在5至15ºC。在一些實施方式中，冷卻系統使用空氣及液體的噴霧，例如液體（例如水）的氣溶膠化噴霧。尤其，冷卻系統能夠具有生成水的氣溶膠化噴霧的噴嘴，該水被冷激至低於室溫。在一些實施方式中，固體材料能夠與氣體及/或液體混合。該固體材料能夠是冷激材料，例如冰，或是當溶解在水中時例如透過化學反應而吸收熱的材料。當配發時，此冷卻劑能夠低於室溫，例如，從-100到20ºC，例如，低於0ºC。For operation with a cooling system, the temperature control fluid is a coolant. Coolants are gases (such as air) or liquids (such as water). The coolant can be at room temperature or chilled to below room temperature, eg at 5 to 15 ºC. In some embodiments, the cooling system uses air and a spray of a liquid, such as an aerosolized spray of a liquid such as water. In particular, the cooling system can have nozzles that generate an aerosolized spray of water that is chilled below room temperature. In some embodiments, solid materials can be mixed with gases and/or liquids. The solid material can be a chilling material, such as ice, or a material that absorbs heat when dissolved in water, such as through a chemical reaction. When dispensed, this coolant can be below room temperature, eg, from -100 to 20ºC, eg, below 0ºC.

為了以加熱系統操作，溫度控制流體是加熱流體。加熱流體能夠是氣體（例如水蒸汽（steam）或加熱的空氣），或液體（例如加熱的水），或氣體和液體的組合。加熱流體高於室溫，例如在40至120ºC，例如在90至110ºC。流體能夠是水，例如實質上純的去離子水，或是包括添加劑或化學品的水。在一些實施方式中，加熱系統使用水蒸汽之噴霧。水蒸汽能夠包括添加劑或化學品。For operation with a heating system, the temperature control fluid is a heating fluid. The heating fluid can be a gas (such as steam or heated air), or a liquid (such as heated water), or a combination of gas and liquid. The heating fluid is above room temperature, eg at 40 to 120ºC, eg at 90 to 110ºC. The fluid can be water, such as substantially pure deionized water, or water including additives or chemicals. In some embodiments, the heating system uses a spray of water vapor. The water vapor can include additives or chemicals.

溫度控制系統100能夠包括單一臂，用於配發冷卻劑或加熱流體，或是包括兩個專用臂，分別配發冷卻劑和加熱流體。The temperature control system 100 can include a single arm for dispensing coolant or heating fluid, or two dedicated arms for dispensing coolant and heating fluid, respectively.

以替代或額外的方式，溫度控制系統100能夠使用其他技術，以控制拋光製程的溫度。例如，加熱或冷卻的流體（例如水蒸汽或冷水）能夠注入拋光液42（例如漿料）中，以在配發拋光液42之前升高或降低拋光液42的溫度。作為另一範例，能夠將電阻加熱器支撐在平台22中以加熱拋光墊30，及/或支撐在承載頭50中以加熱基板10。Alternatively or additionally, the temperature control system 100 can use other techniques to control the temperature of the polishing process. For example, a heated or cooled fluid (eg, steam or cold water) can be injected into the polishing fluid 42 (eg, a slurry) to raise or lower the temperature of the polishing fluid 42 before dispensing the polishing fluid 42 . As another example, a resistive heater can be supported in platform 22 to heat polishing pad 30 and/or in carrier head 50 to heat substrate 10 .

在層的拋光期間緩和（moderate）漿料及拋光墊的溫度容許在電荷攜帶磨料（例如氧化鈰）之間有增加的交互作用。藉由使用溫度控制，能夠透過調控拋光墊的物理參數以及改變帶電二氧化鈰與填料層之間的化學交互作用特性而有利地增加材料移除速率。Moderating the temperature of the slurry and polishing pad during polishing of the layers allows for increased interaction between the charge-carrying abrasive (eg, cerium oxide). By using temperature control, the material removal rate can be advantageously increased by manipulating the physical parameters of the polishing pad and changing the characteristics of the chemical interaction between the charged ceria and the filler layer.

在一些實施方式中，溫度感測器測量拋光製程的溫度，例如拋光墊或拋光墊上的拋光液或基板的溫度，並且控制器90執行閉迴路控制演算法以控制溫度控制系統，例如相關的冷卻劑或加熱流體的流速或溫度，以便將拋光製程維持在期望溫度。In some embodiments, the temperature sensor measures the temperature of the polishing process, such as the temperature of the polishing pad or the polishing solution on the polishing pad or the temperature of the substrate, and the controller 90 executes a closed-loop control algorithm to control the temperature control system, such as the associated cooling The flow rate or temperature of the agent or heating fluid is used to maintain the polishing process at the desired temperature.

在一些實施方式中，原位監視系統測量基板的拋光速率，並且控制器90執行閉迴路控制演算法以控制溫度控制系統，例如相關的冷卻劑或加熱流體的流速或溫度，以便將拋光速率維持在期望速率。In some embodiments, the in-situ monitoring system measures the polishing rate of the substrate, and the controller 90 executes a closed-loop control algorithm to control the temperature control system, such as the flow rate or temperature of the associated coolant or heating fluid, in order to maintain the polishing rate at the desired rate.

圖2繪示執行此技術的方法，該方法可應用於帶電的二氧化鈰漿料。視情況任選，控制器90儲存正在使用的漿料是否含有帶負電的研磨二氧化鈰顆粒或帶正電的研磨二氧化鈰顆粒的指令（202）。執行拋光，將具有研磨二氧化鈰顆粒的漿料配發至拋光墊上（204）。控制器90能夠儲存期望的溫度或溫度範圍以例如作為拋光配方的一部分。因此，在拋光期間，控制器90能夠操作以例如使用開迴路或閉迴路演算法將拋光製程的溫度維持在期望的溫度或溫度範圍（206）。在拋光期間，拋光製程由原位監視系統監視，並由取得的數據計算移除速率（208）。由於各種原因，移除速率可能偏離期望的拋光速率（210）。例如，控制器90能夠偵測移除速率是否與目標拋光速率相差超過閾值的量。若此情況發生，則控制器90能夠使溫度控制系統修改製程溫度，以補償移除速率並且使移除速率回到期望的拋光速率。然而，應該採取什麼行動能取決於研磨二氧化鈰顆粒的電荷。Figure 2 illustrates a method of performing this technique, which can be applied to charged ceria slurries. Optionally, controller 90 stores an instruction whether the slurry being used contains negatively charged ground ceria particles or positively charged ground ceria particles (202). Polishing is performed dispensing the slurry with abrasive ceria particles onto the polishing pad (204). Controller 90 can store a desired temperature or temperature range, for example, as part of a polishing recipe. Accordingly, during polishing, controller 90 is operable to maintain the temperature of the polishing process at a desired temperature or temperature range ( 206 ), eg, using an open loop or closed loop algorithm. During polishing, the polishing process is monitored by an in-situ monitoring system, and the removal rate is calculated from the acquired data (208). The removal rate may deviate from the desired polishing rate ( 210 ) for various reasons. For example, controller 90 can detect whether the removal rate deviates from the target polishing rate by more than a threshold amount. If this occurs, the controller 90 can cause the temperature control system to modify the process temperature to compensate for the removal rate and bring the removal rate back to the desired polishing rate. However, what action should be taken can depend on the charge of the ground ceria particles.

特別是，參照表1，對於帶負電的研磨二氧化鈰顆粒漿料而言，如果移除速率低於期望的拋光速率，則能夠降低溫度以增加拋光速率，然而低於如果移除速率高於期望的拋光速率，則能夠升高溫度以減少拋光速率。相反地，對於帶正電的研磨二氧化鈰顆粒漿料而言，如果移除速率低於期望的拋光速率，則能夠升高溫度以增加拋光速率，然而低於如果移除速率高於期望的拋光速率，則能夠降低溫度以降低拋光速率。帶負電帶正電拋光不足（拋光速率太低）減少溫度增加溫度拋光過度（拋光速率太高）增加溫度減少溫度表1 In particular, referring to Table 1, for negatively charged abrasive ceria particle slurries, the temperature can be lowered to increase the polishing rate if the removal rate is lower than the desired polishing rate, however lower than if the removal rate is higher than desired polishing rate, the temperature can be increased to reduce the polishing rate. Conversely, for positively charged abrasive ceria particle slurries, the temperature can be raised to increase the polishing rate if the removal rate is lower than the desired polishing rate, however lower than if the removal rate is higher than the desired polishing rate. The polishing rate can be lowered to reduce the polishing rate. Negatively charged positively charged Insufficient polishing (polishing rate too low) reduce temperature increase temperature Overpolishing (polishing rate too high) increase temperature reduce temperature Table 1

此數據能夠由控制器90所儲存與存取，例如，作為控制邏輯或查找表，以決定如果移除速率偏離期望的拋光速率時如何調整溫度（212）。或者，關於是否升高或降低溫度的決定程序能夠記入與控制器加載的特定漿料相關聯的製程配方中。This data can be stored and accessed by controller 90, eg, as control logic or a lookup table, to determine how to adjust the temperature if the removal rate deviates from the desired polishing rate (212). Alternatively, the decision as to whether to raise or lower the temperature can be programmed into the process recipe associated with the particular slurry loaded by the controller.

然後，控制器90使溫度控制系統調整溫度，例如，藉由增加或減少溫度控制流體的溫度及/或流速，以修改製程溫度，例如墊溫度（214）。Controller 90 then causes the temperature control system to adjust the temperature, eg, by increasing or decreasing the temperature and/or flow rate of the temperature control fluid, to modify the process temperature, eg, pad temperature (214).

針對增加處理溫度，最大期望溫度取決於拋光墊的玻璃轉變溫度。如果墊變得太熱，它可能會變得太黏彈性，並且拋光製程可能無法如預期進行，例如，拋光速率可能會下降或缺陷可能會增加。通常而言，控制器能夠配置成將溫度保持在低於拋光層熔點（與0℃相比）的 2/3。For increasing processing temperature, the maximum desired temperature depends on the glass transition temperature of the polishing pad. If the pad gets too hot, it may become too viscoelastic and the polishing process may not work as expected, for example, the polishing rate may decrease or defects may increase. Typically, the controller can be configured to keep the temperature below 2/3 the melting point of the polishing layer (compared to 0°C).

與靜電荷對「拋光速率對溫度的相依性」的影響的問題脫鉤，對於許多拋光應用而言，當拋光製程接近拋光終點時降低拋光速率是有用的，以避免拋光過度並且減少非均勻性。另一方面，在厚層的塊體拋光期間保持高拋光速率是有益的。已提出的一種降低拋光速率的方法是降低基板上的壓力。然而，這在某些應用中可能並不實用，該應用為例如在承載頭已於低施加壓力下操作的情況，諸如用於易碎層的拋光。Decoupled from the question of the effect of electrostatic charge on temperature dependence of polishing rate, for many polishing applications it is useful to reduce the polishing rate as the polishing process approaches the end of polishing to avoid overpolishing and reduce non-uniformity. On the other hand, it is beneficial to maintain a high polishing rate during bulk polishing of thick layers. One method that has been proposed to reduce the polishing rate is to reduce the pressure on the substrate. However, this may not be practical in certain applications, for example where the carrier head is already operating at low applied pressure, such as for polishing of brittle layers.

能夠用於替代或附加於在拋光終點附近減少所施加的壓力的一種方法是修改製程溫度以降低拋光速率。例如，對於傳統的二氧化矽漿料或帶正電的二氧化鈰漿料而言，能夠在拋光終點之前降低溫度以降低拋光速率。One method that can be used instead of or in addition to reducing the applied pressure near the polishing endpoint is to modify the process temperature to reduce the polishing rate. For example, for conventional silica slurries or positively charged ceria slurries, the temperature can be lowered before the polishing endpoint to reduce the polishing rate.

圖3繪示執行此技術的方法。對於層的拋光的初始部分，拋光製程的溫度被控制在第一溫度範圍內（302）。初始部分能夠從拋光製程的開始處運行。Figure 3 illustrates a method for implementing this technique. For an initial portion of the polishing of the layer, the temperature of the polishing process is controlled within a first temperature range (302). The initial part can be run from the beginning of the polishing process.

能夠由控制器90使用回饋迴圈執行控制，該回饋迴圈接收來自感測器60的溫度測量，並且調整溫度控制系統100的操作。可理解，在特定位置的拋光墊之溫度、或漿料之溫度、或基板之溫度能夠作為拋光製程之溫度的替用。Control can be performed by controller 90 using a feedback loop that receives temperature measurements from sensor 60 and adjusts the operation of temperature control system 100 . It will be appreciated that the temperature of the polishing pad, or the temperature of the slurry, or the temperature of the substrate at a particular location can be used as an alternative to the temperature of the polishing process.

在拋光開始之前或之後，決定溫度轉變時間是在預期終點時間之前（304）。溫度轉變時間能夠是基於配方的預設值；在這種情況下，使用者能夠在拋光開始之前決定溫度轉變時間。或者，拋光製程能夠由原位監視系統監視。該原位監視系統能夠根據測量的基板之拋光速率而推測出估算的終點時間，並且能夠在估算的終點時間之前根據估算的終點時間而計算轉變時間，該估算的終點時間例如為預設時間（例如10秒），或總拋光時間的百分比（例如5-10%）。Whether the temperature transition time is before the expected endpoint time is determined ( 304 ), before or after polishing begins. The temperature transition time can be a preset value based on the recipe; in this case, the user can determine the temperature transition time before polishing begins. Alternatively, the polishing process can be monitored by an in-situ monitoring system. The in-situ monitoring system can deduce an estimated endpoint time according to the measured polishing rate of the substrate, and can calculate a transition time according to the estimated endpoint time before the estimated endpoint time, and the estimated endpoint time is, for example, a preset time ( e.g. 10 seconds), or a percentage of the total polishing time (e.g. 5-10%).

一旦到達溫度轉變時間，則控制器90使溫度控制系統將拋光溫度降低到較低第二溫度範圍內，該第二溫度範圍低於第一溫度範圍（306）。較低的第二溫度範圍能夠與第一溫度範圍不重疊，或者是能夠與第一溫度範圍重疊不超過該第一溫度範圍重疊的25%。第二溫度範圍的中點能夠比第一溫度範圍的中點低20至40℃。在一些實施例中，能夠將拋光表面36之溫度降低到30℃低於30℃，例如等於20℃或低於20℃。Once the temperature transition time is reached, the controller 90 causes the temperature control system to decrease the polishing temperature to within a lower second temperature range, which is lower than the first temperature range (306). The second, lower temperature range can not overlap the first temperature range, or can overlap the first temperature range by no more than 25% of the overlap of the first temperature range. The midpoint of the second temperature range can be 20 to 40°C lower than the midpoint of the first temperature range. In some embodiments, the temperature of the polishing surface 36 can be reduced to less than 30°C, such as at or below 20°C.

一旦拋光製程的溫度已經到達第二溫度範圍，對於相同層的拋光製程的後續部分，控制器90使溫度控制系統100將拋光製程的溫度維持在第二溫度內範圍內（308）。拋光製程的後續部分能夠持續直到該層的估算終點時間。Once the temperature of the polishing process has reached the second temperature range, controller 90 causes temperature control system 100 to maintain the temperature of the polishing process within the second temperature range for subsequent portions of the polishing process for the same layer (308). Subsequent portions of the polishing process can continue until the estimated endpoint time of the layer.

能用於替代減少拋光終點附近施加的壓力的另一種方法是增加基板上的壓力以減少不均勻性，同時也增加溫度控制流量以使溫度控制系統維持期望的溫度。例如，對於傳統的二氧化矽漿料或對於帶正電的二氧化鈰漿料而言，能夠增加基板上的壓力及/或平台的旋轉速度，並且能夠在拋光終點之前增加冷卻劑的流速以實現更高的不均勻性，而不犧牲拋光速率。Another method that can be used instead of reducing the pressure applied near the end of polishing is to increase the pressure on the substrate to reduce non-uniformity while also increasing the temperature control flow to maintain the temperature control system at the desired temperature. For example, for conventional silica slurries or for positively charged ceria slurries, the pressure on the substrate and/or the rotational speed of the stage can be increased, and the flow rate of the coolant can be increased to Achieve higher non-uniformity without sacrificing polish rate.

圖4繪示執行此技術的方法。對於層的拋光的初始部分而言，將拋光製程的溫度控制在第一溫度範圍內（402）。在拋光開始之前或是之後，決定溫度轉變時間是在預期終點時間之前（404）。這兩個步驟能夠透過如上文針對步驟302和304所討論的方式執行。Figure 4 illustrates a method of performing this technique. For an initial portion of the polishing of the layer, the temperature of the polishing process is controlled within a first temperature range (402). Whether the temperature transition time is before the expected endpoint time is determined ( 404 ), before or after polishing begins. These two steps can be performed in the manner discussed above for steps 302 and 304 .

一旦到達溫度轉變時間，控制器90調整承載頭50中的一或多個腔室中的壓力，以增加基板上的壓力（406）。與此結合，控制器90使溫度控制系統增加溫度控制流體（例如用於二氧化矽漿料或用於帶正電荷的二氧化鈰漿料的冷卻劑）的流速，使得溫度維持在第一溫度範圍內（408）。拋光製程的後續部分能夠持續到該層的估算終點時間為止。Once the temperature transition time is reached, controller 90 adjusts the pressure in one or more chambers in carrier head 50 to increase the pressure on the substrate (406). In conjunction therewith, the controller 90 causes the temperature control system to increase the flow rate of the temperature control fluid (eg, coolant for the silica slurry or for the positively charged ceria slurry) such that the temperature is maintained at the first temperature within range (408). Subsequent portions of the polishing process can continue until the layer's estimated endpoint time.

關於增加處理溫度，最大期望溫度取決於拋光墊的玻璃轉變溫度。如果墊變得太熱，則該墊會變得太黏彈性，且拋光製程可能無法如預期進行，例如拋光速率可能會下降或缺陷可能會增加。大致上，控制器能夠配置成將溫度保持在低於拋光層之熔點（與0℃相比）的2/3。With regard to increasing the processing temperature, the maximum desired temperature depends on the glass transition temperature of the polishing pad. If the pad becomes too hot, the pad becomes too viscoelastic and the polishing process may not perform as expected, eg, the polishing rate may decrease or defects may increase. In general, the controller can be configured to maintain the temperature below 2/3 of the melting point of the polishing layer (compared to 0°C).

更一般而言，對於傳統的二氧化矽漿料或對於帶正電的二氧化鈰漿料而言，為了最大化拋光速率，可能期望在拋光由於拋光墊的黏彈性而劣化之前在最大可能的溫度下運行拋光製程。因此，並非讓溫度由於基板和拋光墊之間的摩擦而線性上升，而是可在拋光製程開始時藉由溫度控制系統將溫度驅動到期望的溫度。然後，能夠將溫度維持在期望的溫度範圍內，例如，在拋光層的熔點（與0℃相比）的約50-66%的溫度。More generally, for conventional silica slurries or for positively charged ceria slurries, in order to maximize the polishing rate, it may be desirable to operate at the maximum possible Run the polishing process at temperature. Therefore, instead of letting the temperature rise linearly due to the friction between the substrate and the polishing pad, the temperature can be driven to a desired temperature by the temperature control system at the beginning of the polishing process. The temperature can then be maintained within a desired temperature range, eg, a temperature at about 50-66% of the melting point of the polishing layer (compared to 0°C).

雖然本說明書含有許多特定的實施方式細節，但不應將這些細節解釋為對任何發明之範疇的限制或對可能請求的對象之範疇的限制，而是多個特徵的敘述，該等特徵可為專屬於特定發明的特定實施例。在此說明書中於分別的實施例的脈絡中所描述的某些特徵也能夠於單一實施例中結合而實施。相反地，在單一實施例的脈絡中描述的各種特徵也能夠在多個實施例中分開地或以任何合適的子組合來實施。再者，儘管特徵可在上文中描述為以某些組合作用，且甚至最初就此被請求，但在一些情況下，來自所請之組合的一或多個特徵可以從組合中割除，並且所請的組合可針對子組合或子組合的變化。While this specification contains many specific implementation details, these should not be construed as limitations on the scope of any invention or of what may be claimed, but rather as descriptions of features which may be specific embodiments specific to specific inventions. Certain features that are described in this specification in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination. Furthermore, although features may be described above as acting in certain combinations, and even initially claimed as such, in some cases one or more features from a claimed combination may be excised from the combination, and the claimed A combination may be for a sub-combination or a variation of a sub-combination.

類似地，雖然操作是以特定順序描繪於圖式中且記載於申請專利範圍中，但這不應被理解成：為了達到期望的結果，要求這樣的操作以所示的特定順序或依序執行，或者所有繪示的操作都執行。Similarly, while operations are depicted in the drawings and described in the claims in a particular order, this should not be construed as requiring that such operations be performed in the particular order shown, or sequentially, in order to achieve desirable results , or all the operations shown are performed.

已經描述標的之特定實施例。其他實施例在以下的申請專利範圍的範疇內。例如，申請專利範圍中記載的動作能夠以不同的順序執行，並且仍然達到期望的結果。作為一個範例，所附的圖式中描繪的製程不必然要求所示的特定順序（或依序）以實現期望的結果。Certain embodiments of the subject matter have been described. Other embodiments are within the scope of the following claims. For example, the actions described in the claims can be performed in a different order and still achieve desirable results. As one example, the processes depicted in the accompanying figures do not necessarily require the particular order shown (or sequential order) to achieve desirable results.

10:基板 20:拋光系統 22:平台 23:軸線 24:馬達 26:驅動軸桿 28:旋轉耦合器 30:拋光墊 32:拋光層 34:背襯層 36:窗 40:拋光液供應通口 42:拋光液 50:承載頭 51:軸線 52a~52c:腔室 54:可撓隔膜 56:保持環 60:支撐結構 62:驅動軸桿 64:溫度感測器 70:原位監視系統 72:光源 74:偵測器 76:電路系統 78:光纖 80:溫度感測器 90:控制器 100:溫度控制系統 110:臂 112:底座 120:噴嘴 122:噴霧 126:隙縫 202~408:操作 10: Substrate 20: Polishing system 22: Platform 23: axis 24: motor 26: Drive shaft 28: Rotary coupler 30: Polishing pad 32: Polishing layer 34: backing layer 36: window 40: Polishing fluid supply port 42: Polishing fluid 50: Bearing head 51: axis 52a~52c: chamber 54: flexible diaphragm 56: retaining ring 60:Support structure 62: Drive shaft 64: Temperature sensor 70: In situ monitoring system 72: light source 74: Detector 76: Circuit system 78: optical fiber 80:Temperature sensor 90: Controller 100: Temperature control system 110: arm 112: Base 120: Nozzle 122: spray 126: Gap 202~408: Operation

圖1是化學機械拋光系統的示意剖面視圖。Figure 1 is a schematic cross-sectional view of a chemical mechanical polishing system.

圖2是拋光方法的流程圖。Fig. 2 is a flowchart of the polishing method.

圖3是拋光方法的另一實施方式的流程圖。3 is a flowchart of another embodiment of a polishing method.

圖4是拋光方法的又一實施方式的流程圖。Figure 4 is a flowchart of yet another embodiment of a polishing method.

各圖式中的相同的元件符號和名稱是指相同的元件。The same component symbols and names in the drawings refer to the same components.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

202~212:操作 202~212: Operation

Claims

一種拋光（polishing）之方法，包括：將一拋光漿料配發至一拋光墊上，該拋光漿料含有帶負電的二氧化鈰（ceria）氧化物；在該漿料的存在下，使一基板之一表面接觸該拋光墊；產生該基板與該拋光墊之間的相對運動，以拋光該基板之該表面；於該基板的一移除速率下進行測量；決定所測量的該移除速率少於一目標移除速率；及回應所測量的該移除速率少於該目標移除速率之該決定，減少該拋光墊與該基板之間的一界面的一溫度。 A method of polishing, comprising: dispensing a polishing slurry containing negatively charged ceria oxide onto a polishing pad; contacting a surface of a substrate with the polishing pad in the presence of the slurry; generating relative motion between the substrate and the polishing pad to polish the surface of the substrate; measuring at a removal rate of the substrate; determining that the measured removal rate is less than a target removal rate; and In response to the determination that the measured removal rate is less than the target removal rate, a temperature of an interface between the polishing pad and the substrate is decreased.

如請求項1所述之方法，其中，減少該溫度包括：將一冷卻劑流體配發至該拋光墊上。The method of claim 1, wherein reducing the temperature comprises: dispensing a coolant fluid onto the polishing pad.

如請求項2所述之方法，其中該冷卻劑流體是冷激（chill）至低於攝氏20度的去離子水。The method of claim 2, wherein the coolant fluid is deionized water chilled to less than 20 degrees Celsius.

一種拋光之方法，包括：將一拋光漿料配發至一拋光墊上，該拋光漿料含有帶負電的二氧化鈰氧化物；在該漿料的存在下，使一基板之一表面接觸該拋光墊；產生該基板與該拋光墊之間的相對運動，以拋光該基板之該表面；於該基板的一移除速率下進行測量；決定所測量的該移除速率大於一目標移除速率；及回應所測量的該移除速率大於該目標移除速率之該決定，增加該拋光墊與該基板之間的一界面的一溫度。 A method of polishing, comprising: dispensing a polishing slurry containing negatively charged ceria oxide onto a polishing pad; contacting a surface of a substrate with the polishing pad in the presence of the slurry; generating relative motion between the substrate and the polishing pad to polish the surface of the substrate; measuring at a removal rate of the substrate; determining that the measured removal rate is greater than a target removal rate; and In response to the determination that the measured removal rate is greater than the target removal rate, a temperature of an interface between the polishing pad and the substrate is increased.

如請求項4所述之方法，其中增加該溫度包括：將一加熱流體配發至該拋光墊上。The method of claim 4, wherein increasing the temperature comprises: dispensing a heating fluid onto the polishing pad.

如請求項5所述之方法，其中配發該加熱流體包括：噴灑（spray）水蒸汽（steam）。The method according to claim 5, wherein dispensing the heating fluid comprises: spraying steam.

一種用於從基板移除材料之方法，包括：將一漿料配發到一拋光墊之一表面上，其中該漿料包括一承載液體與一研磨劑（abrasive agent）；儲存在該研磨劑上的一相關電荷（relative charge）的一指令；在該漿料的存在下將一基板之一表面接觸該拋光墊；產生該基板與該拋光墊之間的相對運動，以拋光該基板之該表面；測量該基板的一移除速率；將測量的一該移除速率與一目標移除速率進行比較，且根據該比較，決定是否增加或減少該移除速率；根據該研磨劑的該相關電荷的該指令以及根據是否增加或減少該移除速率，而決定是否增加或減少該拋光墊與該基板之間的一界面的一溫度；以及控制所決定的該界面的一溫度，以修改該移除速率。 A method for removing material from a substrate comprising: dispensing a slurry onto a surface of a polishing pad, wherein the slurry includes a carrier liquid and an abrasive agent; an instruction of a relative charge stored on the abrasive; contacting a surface of a substrate with the polishing pad in the presence of the slurry; generating relative motion between the substrate and the polishing pad to polish the surface of the substrate; measuring a removal rate of the substrate; comparing a measured removal rate with a target removal rate, and based on the comparison, determining whether to increase or decrease the removal rate; determining whether to increase or decrease a temperature of an interface between the polishing pad and the substrate based on the command of the relative charge of the abrasive and based on whether to increase or decrease the removal rate; and A temperature of the determined interface is controlled to modify the removal rate.

一種電腦程式產品，包含在非暫態電腦可讀媒體上的多個指令，以引發一或多個電腦進行：使一拋光系統使用具一研磨劑的一漿料拋光在一拋光墊上的一基板；儲存在該研磨劑上的一相關電荷的一指令；根據接收自一原位監視系統的一訊號，計算該基板的一移除速率；將測量的該移除速率與一目標移除速率進行比較；根據該比較，決定是否增加或減少該移除速率；根據該研磨劑上的該相關電荷的該指令以及根據是否增加或減少該移除速率，而決定是否增加或減少該拋光墊與該基板之間的一界面的一溫度；以及使一溫度控制系統調整所決定的該界面的一溫度，以修改該移除速率。 A computer program product comprising instructions on a non-transitory computer readable medium to cause one or more computers to: causing a polishing system to polish a substrate on a polishing pad using a slurry with an abrasive; an instruction to store an associated charge on the abrasive; calculating a removal rate of the substrate based on a signal received from an in-situ monitoring system; comparing the measured removal rate with a target removal rate; Based on the comparison, decide whether to increase or decrease the removal rate; determining whether to increase or decrease a temperature of an interface between the polishing pad and the substrate based on the instruction of the associated charge on the abrasive and based on whether to increase or decrease the removal rate; and having a temperature control system adjust a determined temperature of the interface to modify the removal rate.

如請求項8所述之電腦程式產品，其中控制該界面的該溫度的該等指令包括下述指令：如果該指令是帶正電則藉由增加該溫度而增加該拋光速率；以及，如果該指令是帶負電則藉由減少該溫度而增加該拋光速率。The computer program product as described in claim 8, wherein the instructions for controlling the temperature of the interface include the following instructions: if the instruction is positively charged, the polishing rate is increased by increasing the temperature; and, if the instruction is positively charged, the polishing rate is increased by increasing the temperature; Instructions to be negatively charged increase the polishing rate by reducing the temperature.

如請求項8所述之電腦程式產品，其中控制該界面的該溫度的該等指令包括下述指令：如果該指令是帶正電則藉由減少該溫度而減少該拋光速率；以及，如果該指令是帶負電則藉由增加該溫度而減少該拋光速率。The computer program product as claimed in claim 8, wherein the instructions for controlling the temperature of the interface include the instructions: if the instruction is positively charged, the polishing rate is reduced by reducing the temperature; and, if the instruction is positively charged, the polishing rate is reduced; Instructions to be negatively charged decrease the polishing rate by increasing the temperature.

一種拋光之方法，包括：透過將一拋光漿料配發至一拋光墊上，拋光在一基板上的一層，在該漿料的存在下使該基板上的該層的一表面接觸該拋光墊，並且產生在該基板與該拋光墊之間的相對運動；對於該層的拋光的一初始部分，將該拋光的溫度控制在一第一溫度範圍內；獲得一溫度轉變時間，該溫度轉變時間在一終點時間之前；一旦決定到達該溫度轉變時間，則將該拋光的該溫度降低至一較低的第二溫度範圍，該較低的第二溫度範圍低於該第一溫度範圍；以及對於相同的該層的拋光的一後續部分，將該拋光的溫度控制在該第二溫度範圍內，直到該估算的終點時間為止。 A method of polishing, comprising: Polishing a layer on a substrate by dispensing a polishing slurry onto a polishing pad, bringing a surface of the layer on the substrate into contact with the polishing pad in the presence of the slurry, and producing an Relative motion between polishing pads; controlling the temperature of the polishing within a first temperature range for an initial portion of the polishing of the layer; obtaining a temperature transition time prior to an endpoint time; Once it is determined that the temperature transition time has been reached, reducing the temperature of the polishing to a second, lower temperature range that is lower than the first temperature range; and For a subsequent portion of the polishing of the same layer, the temperature of the polishing is controlled within the second temperature range until the estimated endpoint time.

如請求項11所述之方法，其中該拋光漿料包括二氧化矽（silica）研磨顆粒或帶正電的二氧化鈰顆粒。The method of claim 11, wherein the polishing slurry comprises silica abrasive particles or positively charged ceria particles.

如請求項11所述之方法，其中獲得該溫度轉變時間包括：儲存一預定轉變時間。The method as claimed in claim 11, wherein obtaining the temperature transition time comprises: storing a predetermined transition time.

如請求項11所述之方法，包括：以一原位監視系統在拋光期間監視該基板，根據來自該原位監視系統的一訊號決定該預期的終點時間，並且其中獲得該溫度轉變時間包括：根據一預期的終點時間計算該溫度轉變時間。The method of claim 11, comprising: monitoring the substrate during polishing with an in-situ monitoring system, determining the expected endpoint time based on a signal from the in-situ monitoring system, and wherein obtaining the temperature transition time comprises: The temperature transition time is calculated based on an expected endpoint time.

如請求項14所述之方法，其中計算該溫度轉變時間包括：從該預期的終點減去一預定的時段，或是從該預期的終點時間減去一百分比的總拋光時間。The method of claim 14, wherein calculating the temperature transition time comprises: subtracting a predetermined period of time from the expected endpoint, or subtracting a percentage of total polishing time from the expected endpoint time.

一種拋光之方法，包括：透過將一拋光漿料配發至一拋光墊上，拋光在一基板上的一層，在該漿料的存在下使該基板上的該層的一表面接觸該拋光墊，並且產生在該基板與該拋光墊之間的相對運動；對於該層的拋光的一初始部分，將該拋光的溫度控制在一第一溫度範圍內；決定一溫度轉變時間，該溫度轉變時間在一終點時間之前；一旦決定到達該溫度轉變時間，則增加在該基板上的壓力，同時增加冷卻劑流量以持續將該拋光的該溫度維持於該第一溫度範圍內；以及對於相同的該層的拋光的一後續部分，維持該增加的壓力且將該拋光的溫度控制在該第一溫度範圍內，直到該估算的終點時間為止。 A method of polishing, comprising: Polishing a layer on a substrate by dispensing a polishing slurry onto a polishing pad, bringing a surface of the layer on the substrate into contact with the polishing pad in the presence of the slurry, and producing an Relative motion between polishing pads; controlling the temperature of the polishing within a first temperature range for an initial portion of the polishing of the layer; determining a temperature transition time prior to an endpoint time; Once it is determined that the temperature transition time is reached, increasing the pressure on the substrate while increasing coolant flow to continuously maintain the temperature of the polishing within the first temperature range; and For a subsequent portion of polishing of the same layer, the increased pressure is maintained and the temperature of the polishing is controlled within the first temperature range until the estimated endpoint time.

如請求項16所述之方法，其中該拋光漿料包括二氧化矽研磨顆粒或帶正電的二氧化鈰顆粒。The method of claim 16, wherein the polishing slurry comprises silicon dioxide abrasive particles or positively charged ceria particles.

如請求項16所述之方法，其中獲得該溫度轉變時間包括：儲存一預定轉變時間。The method according to claim 16, wherein obtaining the temperature transition time comprises: storing a predetermined transition time.

如請求項16所述之方法，包括：以一原位監視系統在拋光期間監視該基板，根據來自該原位監視系統的一訊號決定該預期的終點時間，並且其中獲得該溫度轉變時間包括：根據一預期的終點時間計算該溫度轉變時間。The method of claim 16, comprising: monitoring the substrate during polishing with an in-situ monitoring system, determining the expected endpoint time based on a signal from the in-situ monitoring system, and wherein obtaining the temperature transition time comprises: The temperature transition time is calculated based on an expected endpoint time.

如請求項19所述之方法，其中計算該溫度轉變時間包括：從該預期的終點減去一預定的時段，或是從該預期的終點時間減去一百分比的總拋光時間。The method of claim 19, wherein calculating the temperature transition time comprises: subtracting a predetermined period of time from the expected endpoint, or subtracting a percentage of total polishing time from the expected endpoint time.