CN204810134U - DVDT detects and protection device - Google Patents
DVDT detects and protection device Download PDFInfo
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- CN204810134U CN204810134U CN201520554345.1U CN201520554345U CN204810134U CN 204810134 U CN204810134 U CN 204810134U CN 201520554345 U CN201520554345 U CN 201520554345U CN 204810134 U CN204810134 U CN 204810134U
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Abstract
The utility model discloses a DVDT detects and protection device, include: DVDT detection circuitry for detect DVDT's voltage variation volume, this circuit includes a plurality of high pressure MOS pipe, resistance, clamping diode and parasitic capacitance, and incoming signal is gone into to its middle and high voltage MOS pipe bars termination, and the drain terminal connecting resistance of this high pressure MOS pipe and source termination are publicly, clamping diode is connected at the both ends of resistance, parasitic capacitance connects between the drain terminal of high -pressure MOS pipe and source end, DVDT comparison circuit links to each other with DVDT detection circuitry, is used for the basis the affiliated DVDT rank of voltage variation volume is confirmed to the voltage variation volume, reaches the signal that the configuration is used for controlling output driver regulator circuit mode, the output driver regulator circuit for according to control signal adjustment and output driver ability. The utility model discloses the circuit realizes that the mode is simple, and reliability and integrated level are high, do not need extra peripheral device, are applicable to various application such as bridge circuit, intelligent power module.
Description
Technical field
The utility model relates to a kind of DV/DT checkout gear, particularly relates to a kind of DV/DT and detects and protective device, belong to the technical field of intelligent power driver module.
Background technology
Along with the continuous progress of electron electric power technology, high pressure gate driver circuit and Intelligent Power Module (high pressure gate driver circuit and power device are closed the power driver module be enclosed in together) play more and more important effect in multiple fields such as motor, automation, power-supply systems.
High voltage half-bridge topology is the most typical apply scene of high pressure gate driver circuit.High pressure gate driver circuit, high side power device (MOS or IGBT), lowside power device form half-bridge driven topology together.As shown in Figure 1, gate driver circuit divides according to working power voltage and mainly comprises high side drive circuit and low side drive circuit, wherein the output HO of high side drive circuit controls the switch of high side MOSFETM1, and the output LO of low side drive circuit controls the switch of downside MOSFETM2.The bootstrapping floating power supply consisted of bootstrap diode Dbs and bootstrap capacitor Cbs is used for providing power supply to high side drive circuit.Therefore the floating ground VS of high side drive circuit changes along with the on off state of power device.As shown in Figure 2, HO from low become high time, LO export low, the MOSFETM1 conducting of high side, the output node VS of half bridge drive system switches to power power-supply voltage from earth potential with DV/DT speed.In order to improve the efficiency of half bridge system, reducing the power consumption of power device in switching process, needing to allow power device switch at faster speed.But VS can deposit mechanism bad both ways with DV/DT rate variation: one is when VS is with the rate variation of DV/DT, parasitic capacitance Cds can flow through displacement current (Id1), this electric current can produce pressure drop in the output impedance of gate driver circuit or electric capacity Cgs, if this pressure drop has exceeded the threshold value of MOSFET, misleading of MOSFET will be caused; Two is when VS is with the rate variation of DV/DT, parasitic capacitance Cdb can flow through displacement current (Id2) equally, if the pressure drop that this electric current produces on dead resistance Rb is greater than the cut-in voltage of parasitic triode NPN, the conducting of NPN can be caused equally, and then trigger big current.If the rate of change DV/DT of VS has exceeded the scope limited, above-mentioned two kinds of mechanism all can cause downside MOSFETM2 to mislead thus cause the breech lock leading directly to or cause M2 of high and low side MOSFET, and then cause permanent breaking-up to M2.How to allow power device with safer DV/DT switching rate work, prior art adjusts the output driving force of gate driver circuit mainly through peripheral discrete devices, and then adjustment DV/DT.
But this mode adds use cost, and be not too beneficial to the layout of application of printed circuit plate (PCB), easily increase various parasitic disturbances factor; This mode is not suitable for fully integrated Intelligent Power Module in addition, cannot adjust DV/DT effectively easily, thus play a protective role to power device.
Summary of the invention
Technical problem to be solved in the utility model is to overcome the deficiencies in the prior art; a kind of DV/DT is provided to detect and protective device; solve prior art adjusts gate driver circuit output driving force by peripheral discrete devices; be not suitable for fully integrated Intelligent Power Module, the problem of DV/DT cannot be adjusted effectively easily.
The utility model specifically solves the problems of the technologies described above by the following technical solutions:
A kind of DV/DT detects and protective device, comprising:
DV/DT testing circuit, for detecting the voltage variety of DV/DT; This circuit comprises several high-voltage MOS pipes, resistance, clamping diode and parasitic capacitance, and wherein the grid termination of high-voltage MOS pipe enters input signal, the drain terminal contact resistance of this high-voltage MOS pipe and source connects publicly; The two ends of described resistance connect clamping diode; Described parasitic capacitance is connected between the drain terminal of high-voltage MOS pipe and source;
DV/DT comparison circuit, is connected with DV/DT testing circuit, for DV/DT rank belonging to described voltage variety determination voltage variety, and is configured for the signal controlling to export driving Circuit tuning mode of operation according to DV/DT rank;
Export drive Circuit tuning, be connected with DV/DT comparison circuit, for according to control signal configuration effort pattern and output driving force.
Further, as a kind of optimal technical scheme of the present utility model: the window comparator that described DV/DT comparison circuit comprises several comparative levels and is attached thereto.
Further, as a kind of optimal technical scheme of the present utility model: described output drives Circuit tuning to comprise the first output driving tube for charging and the second output driving tube for discharging, and is connected to described two driving adjustment units exported between driving tubes; Described driving adjustment unit comprises some groups of switching circuits, and the quantity of described switching circuit is corresponding with control signal quantity.
Further, as a kind of optimal technical scheme of the present utility model: connect between described some groups of switching circuits, each switching circuit is made up of resistance and switching tube in parallel with a resistor.
Further, as a kind of optimal technical scheme of the present utility model: in parallel between described some groups of switching circuits, and each switching circuit forms by logic gates and by the 3rd output driving tube that logic gates controls.
Further, as a kind of optimal technical scheme of the present utility model: described DV/DT testing circuit detects and comprises first and second high-voltage MOS pipe, first and second resistance, first and second clamping diode, first and second parasitic capacitance, wherein the grid termination of the first high-voltage MOS pipe enters the first input signal, and the drain terminal of this first high-voltage MOS pipe connects the first resistance and source connects publicly; The two ends of described first resistance connect the first clamping diode; Between the drain terminal that described first parasitic capacitance is connected to the first high-voltage MOS pipe and source; The grid termination of described second high-voltage MOS pipe enters the second input signal, and the drain terminal of this second high-voltage MOS pipe connects the second resistance and source connects publicly; The two ends of described second resistance connect the second clamping diode; Between the drain terminal that described second parasitic capacitance is connected to the second high-voltage MOS pipe and source.
The utility model adopts technique scheme, can produce following technique effect:
(1) DV/DT provided by the utility model detects and protective device, by the DV/DT in automatic detection power devices switch process, when DV/DT exceedes the threshold value of setting, drive circuit adjustment can export driving force automatically, makes power device be operated in the DV/DT scope of reasonable benefit/risk; Circuit implementations is simple, reliability and integrated level high, do not need extra peripheral components, be applicable to the various application such as bridge circuit, Intelligent Power Module.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is half-bridge driven topological structure in prior art.
Fig. 2 is the MOSFET inefficacy mechanism that in prior art, DV/DT causes.
Fig. 3 is that DV/DT of the present utility model detects the structural representation with protective device.
Fig. 4 is the structural representation of DV/DT comparison circuit in the utility model.
The normal level transfer process work wave that Fig. 5 (a) is DV/DT comparison circuit in the utility model; Fig. 5 (b) is the less course work waveform of the DV/DT of DV/DT comparison circuit in the utility model; Fig. 5 (c) is the larger process work wave of the DV/DT of DV/DT comparison circuit in the utility model.
Fig. 6 is the judgement schematic diagram of DV/DT comparison circuit in the utility model.
Fig. 7 is the schematic diagram exporting the execution mode 1 driving Circuit tuning in the utility model.
Fig. 8 is the schematic diagram exporting the execution mode 2 driving Circuit tuning in the utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model embodiment is described in detail.Should be clear and definite, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
The DV/DT that the utility model provides detects the device with protection, comprises DV/DT testing circuit, DV/DT comparison circuit and export driving Circuit tuning; Wherein DV/DT testing circuit comprises several high-voltage MOS pipes, resistance, clamping diode and parasitic capacitance.In the present embodiment, as shown in Figure 3, DV/DT testing circuit comprises first and second high-voltage MOS pipe, first and second resistance, first and second clamping diode, and first and second parasitic capacitance; Described first high-voltage MOS pipe MA1, its grid termination input signal IN1, drain terminal meets the first resistance R1, another termination floating power supply VB of the first resistance R1; The source of the first high-voltage MOS pipe MA1 meets VSS publicly, the two termination first clamping diode D1 of the first resistance R1; For the second high-voltage MOS pipe MA2, its grid termination input signal IN2, drain terminal meets the second resistance R2, another termination floating power supply VB of the second resistance R2; The source of the second high-voltage MOS pipe MA2 meets VSS publicly, the two termination second clamping diode D2 of the second resistance R2.And between the first parasitic capacitance Cpar1 drain terminal of being connected to the first high-voltage MOS pipe MA1 and source, between the drain terminal that the second parasitic capacitance Cpar2 is connected to the second high-voltage MOS pipe MA2 and source; This testing circuit also achieves high voltage level translation function, input IN1 and IN2 of low voltage domain is converted to the signal of high voltage domain.Testing circuit is that the displacement current of the parasitic capacitance detecting DV/DT and cause obtains voltage variety in ohmically change in voltage.
The drain terminal of the first high-voltage MOS pipe MA1 and the second high-voltage MOS pipe MA2 detects that voltage variety is delivered to DV/DT comparison circuit and compared with inner benchmark window, and the control signal configuration exporting at least one exports the mode of operation driving Circuit tuning, adjusts output driving force.Export and drive Circuit tuning, according to the driving force under control signal adjustment and output different working modes, to guarantee that power device is operated within the scope of safe DV/DT.
In the present embodiment, give the concrete embodiment of DV/DT comparison circuit in device, as shown in Figure 4, include a comparative level Vref, window comparator Comp1 and Comp2, the inverting input of two comparators is all connected with comparative level Vref, the normal phase input end of two window comparators meets output node A and B of high voltage level change-over circuit respectively, the output CA of two window comparators is connected with two inputs of CB AND OR NOT gate Nor1, the S end of the output termination RS-Latch of Nor1, the R termination reset signal UVLO of RS-Latch.Its course of work is as follows, and when high side MOSFET conducting, the output node VS of half-bridge circuit can with the rate variation of DV/DT.Because high side drive circuit sampling bootstrap capacitor Cbs provides floating power supply, when VS is with the rate variation of DV/DT, the power supply VB of high side drive circuit also can follow change with the speed of DV/DT.Now, because the DV/DT of VB changes, the first parasitic capacitance Cpar1 of meeting the first high-voltage MOS pipe M1 and second high-voltage MOS pipe M2 in high voltage level change-over circuit and the second parasitic capacitance Cpar2 produces displacement current respectively.This electric current can flow through the first resistance R1 in high voltage level change-over circuit and the second resistance R2, two resistance produces pressure drop and equals
first resistance R1 and the second resistance R2, the first high-voltage MOS pipe MA1 and the second high-voltage MOS pipe MA2 mate as much as possible.If so when floating power supply VB having the change in voltage of DV/DT, the pressure drop that two resistance produce should be basically identical.The pressure drop produced is compared with the comparative level of window comparator respectively, if two ohmically change in voltage satisfy condition simultaneously, then NOR gate exports high level, and by RS-Latch set, exports the effective Gate_control signal of high level.As shown in Fig. 5 (a), when high-voltage level shifters normal conversion signal, such as the second high-voltage MOS pipe M2 receives signal, first high-voltage MOS pipe M1 closes, the second resistance R2 is now only had to have change in voltage, first resistance R1 does not have, so the Gate_control of DV/DT comparison circuit output low level.If DV/DT on VB is smaller for power device switch, as shown in Fig. 5 (b), the displacement current produced is smaller, change in voltage on the first resistance R1 and the second resistance R2 cannot reach the comparative level Vref of window comparator, the Gate_control of DV/DT comparison circuit output low level.As shown in Fig. 5 (c), when DV/DT is larger on VB for power device switch, change in voltage on first resistance R1 and the second resistance R2 reaches the comparative level Vref of window comparator, and now DV/DT comparison circuit exports the Gate_control of high level.
DV/DT comparison circuit can also when the voltage variety at the first resistance R1 and the second resistance R2 two ends have exceeded the inner window comparative level of DV/DT comparison circuit simultaneously, configuration control signal exports, export and drive Circuit tuning to respond this event, and reduce output driving force, DV/DT is down in safe scope.
All contains only a window level in DV/DT comparison circuit embodiment shown in Fig. 4 and Fig. 5, the DV/DT grade of judgement is fairly simple.Fig. 6 is the judgement schematic diagram that DV/DT comparison circuit contains multiple window comparative level, can arrange according to the quantity of DV/DT dimension accuracy to window comparative level, thus according to the degree of change in voltage on resistance, be multiple scope by DV/DT partition of the level, export the Gate_control<n:1> signal of multidigit.On resistance as shown in Figure 6 the degree of voltage variety process decision chart in, be vth1 to vthn many scopes by DV/DT grade setting, when on resistance, voltage variety falls into corresponding scope, a DV/DT rank can be generated, while obtaining DV/DT rank, the signal of corresponding Gate_control also can correspondingly produce, and obtains Gate_control<1> to Gate_control<n> signal thus and exports.And set by DV/DT level of security in figure 6, when DV/DT rank is more than DV/DT level of security, exports driving force by adjustment and protect.
Drive Circuit tuning for the output in device, described output drives Circuit tuning to comprise the first output driving tube for charging and the second output driving tube for discharging, and is connected to described two driving adjustment units exported between driving tubes; Described driving adjustment unit comprises some groups of switching circuits, and the quantity of described switching circuit is corresponding with control signal quantity.The utility model provides different embodiment, as shown in Figure 7 and Figure 8, for exporting the particular circuit configurations driving Circuit tuning.
The output of Fig. 7 drives Circuit tuning to comprise and first exports driving tube MP1 and second exporting driving tube MN1 and driving adjustment unit for discharging for what charge, as shown in Figure 7, drive adjustment unit to be made up of the switching circuit of two groups of series connection, each switching circuit is made up of resistance and switching tube in parallel with a resistor; In Fig. 7, a switching circuit is made up of switching tube MP2 and resistance Rd1 in parallel with it, and this switching circuit receives the signal from Gate_control<1>.Another switching circuit is made up of switching tube MP3 and resistance Rd2 in parallel with it, and this switching circuit receives the signal from Gate_control<2>.For in first switching circuit, first exports driving tube MP1, switching tube MP2 and the resistance Rd charging process for circuit, and second exports the discharge process of driving tube MN1 for circuit.For the charging process of circuit, by switching tube MP2 controlling resistance Rd short circuit whether it be, output driving force is adjusted by resistance Rd, the control signal Gate_control<1> exported when comparison circuit is low level, switching tube MP2 conducting, resistance Rd is shorted, when the Gate_control<1> that comparison circuit exports is high level, resistance Rd and first exports driving tube MP1 series connection, and driving force reduces.For second switch circuit, its principle is with above-mentioned.
The output of Fig. 8 drives in Circuit tuning, comprises and first exports driving tube MP1 and second exporting driving tube MN1 and driving adjustment unit for discharging for what charge, as shown in Figure 8, drive adjustment unit to be made up of the switching circuit of two groups of parallel connections; In Fig. 8, first switching circuit forms by logic gates NOR1 and by the output driving tube MP2 that logic gates NOR1 controls, and this switching circuit receives the signal from Gate_control<1>.Another switching circuit forms by logic gates NOR2 and by the output driving tube MP3 that logic gates NOR2 controls, and this switching circuit receives the signal from Gate_control<2>.For in first switching circuit, use and wherein first export driving tube MP1 and export driving tube MP2, logic gates NOR1 for adjusting the actuating force of circuit.As shown in FIG., the control signal Gate_control<1> that DV/DT comparison circuit exports connects logic gates NOR1; The output of logic gates NOR1 connects the grid exporting driving tube MP2; As shown in FIG., when the control signal Gate_control<1> that DV/DT comparison circuit exports is low level, export driving tube MP2 and first and export driving tube MP1 parallel connection, when the control signal Gate_control<1> that DV/DT comparison circuit exports is high level, only have the first output driving tube MP1 to work, driving force reduces.For second switch circuit, its principle is with above-mentioned.
Further, export and drive Circuit tuning can also adjust output driving force by supply voltage, or only adjustment fills with current capacity outside exporting, but also can make relevant adjustment to output pull-down current ability.
When the DV/DT class value of described voltage variety is more than DV/DT level of security, preferably can adopt the mode reducing gradually and export driving force, reduce DV/DT, make the mode of operation exporting driving Circuit tuning be changed to more weak output driving force by stronger output driving force.Driving force is exported for described reduction, can be realized by the impedance or reduction supply voltage mode increasing output driving tube.
Professional should recognize further, in conjunction with the circuit of each example that embodiment disclosed herein describes, can realize with electronic hardware module, generally describe composition and the annexation of each example in the above description according to function.Particularly, the computing of described electronic hardware module and control section can dredging collateral logic hardware realize, and it can be use the produced logical integrated circuit of existing integrated circuit technology, and the present embodiment is not construed as limiting this.
Further, in the utility model, all adopt electronic hardware module, utilize technology for detection commonly known in the art, transmission and contrast, output.Electronic hardware module is not made improvements itself, also do not also have specific method flow.The correlation module related in the utility model and the function of realization thereof be hardware after improvement and formation thereof device on carry computer software programs conventional in prior art or pertinent protocols just can realize, be not that computer software programs of the prior art or pertinent protocols are improved.Innovation of the present utility model is the improvement of hardware module in prior art and connects syntagmatic, but not be in hardware module for realizing the improvement of software or the agreement of carrying about function.
Above-described embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; be understood that; the foregoing is only embodiment of the present utility model; and be not used in restriction protection range of the present utility model; all within spirit of the present utility model and principle, any amendment made, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (6)
1. DV/DT detects and a protective device, it is characterized in that, comprising:
DV/DT testing circuit, for detecting the voltage variety of DV/DT; This circuit comprises several high-voltage MOS pipes, resistance, clamping diode and parasitic capacitance, and wherein the grid termination of high-voltage MOS pipe enters input signal, the drain terminal contact resistance of this high-voltage MOS pipe and source connects publicly; The two ends of described resistance connect clamping diode; Described parasitic capacitance is connected between the drain terminal of high-voltage MOS pipe and source;
DV/DT comparison circuit, is connected with DV/DT testing circuit, for DV/DT rank belonging to described voltage variety determination voltage variety, and is configured for the signal controlling to export driving Circuit tuning mode of operation according to DV/DT rank;
Export drive Circuit tuning, be connected with DV/DT comparison circuit, for according to control signal configuration effort pattern and output driving force.
2. DV/DT detects and protective device according to claim 1, it is characterized in that: the window comparator that described DV/DT comparison circuit comprises several comparative levels and is attached thereto.
3. DV/DT detects and protective device according to claim 1, it is characterized in that: described output drives Circuit tuning to comprise the first output driving tube for charging and the second output driving tube for discharging, and is connected to described two driving adjustment units exported between driving tubes; Described driving adjustment unit comprises some groups of switching circuits, and the quantity of described switching circuit is corresponding with control signal quantity.
4. DV/DT detects and protective device according to claim 3, and it is characterized in that, connect between described some groups of switching circuits, each switching circuit is made up of resistance and switching tube in parallel with a resistor.
5. DV/DT detects and protective device according to claim 3, it is characterized in that: in parallel between described some groups of switching circuits, and each switching circuit forms by logic gates and by the 3rd output driving tube that logic gates controls.
6. DV/DT detects and protective device according to claim 1, it is characterized in that: described DV/DT testing circuit detects and comprises first and second high-voltage MOS pipe, first and second resistance, first and second clamping diode, first and second parasitic capacitance, wherein the grid termination of the first high-voltage MOS pipe enters the first input signal, and the drain terminal of this first high-voltage MOS pipe connects the first resistance and source connects publicly; The two ends of described first resistance connect the first clamping diode; Between the drain terminal that described first parasitic capacitance is connected to the first high-voltage MOS pipe and source; The grid termination of described second high-voltage MOS pipe enters the second input signal, and the drain terminal of this second high-voltage MOS pipe connects the second resistance and source connects publicly; The two ends of described second resistance connect the second clamping diode; Between the drain terminal that described second parasitic capacitance is connected to the second high-voltage MOS pipe and source.
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| CN201520554345.1U CN204810134U (en) | 2015-07-28 | 2015-07-28 | DVDT detects and protection device |
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| CN201520554345.1U CN204810134U (en) | 2015-07-28 | 2015-07-28 | DVDT detects and protection device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106325458A (en) * | 2016-08-25 | 2017-01-11 | 浪潮(北京)电子信息产业有限公司 | Startup self-test circuit of switch power source |
| WO2017016319A1 (en) * | 2015-07-28 | 2017-02-02 | 英特格灵芯片(天津)有限公司 | Dv/dt detection and protection apparatus and method |
| CN107666243A (en) * | 2017-11-13 | 2018-02-06 | 重庆中科芯亿达电子有限公司 | A kind of self-excitation synchronous rectified power circuit |
| CN113447789A (en) * | 2021-06-29 | 2021-09-28 | 深圳赛意法微电子有限公司 | MOSFET detection circuit and method |
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2015
- 2015-07-28 CN CN201520554345.1U patent/CN204810134U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017016319A1 (en) * | 2015-07-28 | 2017-02-02 | 英特格灵芯片(天津)有限公司 | Dv/dt detection and protection apparatus and method |
| CN106325458A (en) * | 2016-08-25 | 2017-01-11 | 浪潮(北京)电子信息产业有限公司 | Startup self-test circuit of switch power source |
| CN106325458B (en) * | 2016-08-25 | 2018-12-07 | 浪潮(北京)电子信息产业有限公司 | A kind of startup self-detection circuit of Switching Power Supply |
| CN107666243A (en) * | 2017-11-13 | 2018-02-06 | 重庆中科芯亿达电子有限公司 | A kind of self-excitation synchronous rectified power circuit |
| CN107666243B (en) * | 2017-11-13 | 2023-08-15 | 重庆中科芯亿达电子有限公司 | Self-excitation synchronous rectification power supply circuit |
| CN113447789A (en) * | 2021-06-29 | 2021-09-28 | 深圳赛意法微电子有限公司 | MOSFET detection circuit and method |
| CN113447789B (en) * | 2021-06-29 | 2022-12-30 | 深圳赛意法微电子有限公司 | MOSFET detection circuit and method |
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Address after: 100094 Room 601, unit 3, 6 / F, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Howell analog integrated circuit (Beijing) Co.,Ltd. Address before: 100094 Room 601, unit 3, 6 / F, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee before: Beijing Weihao integrated circuit design Co.,Ltd. |
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